JPH0227318A - Flattening method for transparent electrode - Google Patents
Flattening method for transparent electrodeInfo
- Publication number
- JPH0227318A JPH0227318A JP17790188A JP17790188A JPH0227318A JP H0227318 A JPH0227318 A JP H0227318A JP 17790188 A JP17790188 A JP 17790188A JP 17790188 A JP17790188 A JP 17790188A JP H0227318 A JPH0227318 A JP H0227318A
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- electrode
- transparent
- substrate
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000009713 electroplating Methods 0.000 claims abstract description 4
- 238000007772 electroless plating Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 8
- 229910018104 Ni-P Inorganic materials 0.000 abstract 1
- 229910018536 Ni—P Inorganic materials 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は液晶パネル、ＫＬパネル等の透明基板Ｌ
上に形成された透明電極の平台化方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for flattening a transparent electrode formed on a transparent substrate L of a liquid crystal panel, a KL panel, etc.
［従来の技術］
液晶パ木ル、ＥＬパネル等の高密度大容量化にともなっ
て駆動周波数の増加をもたらし、そのために透明電極の
低抵抗化は非常に大きな課題になってきた。透明電極の
低抵抗化はその材料、成膜方法の改良によって工ＴＯを
中心に２ Ｘ ｉ Ｏ−’Ω・ｍの比抵抗のものが量産
的に得られるようになってきたが、’／ ａｕｔｙ
ｌ ’／４００ ｄｕｔｙ等の高周波駆動においては
この値とて十分でなくなってきた。したがって金属アシ
ストにより透明電極の低抵抗化をはかることがはかられ
ているがコストアップ要因、−開口率の低下といった問
題が生じていた。透明電極の低抵抗化のためにはその膜
厚を厚くすることが一番簡単であるが、電極バターニン
グ後に基板表面に電極の厚み分の凸凹が存在し、これが
いろいろな問題を引きおこしていた。すなわち液晶表示
のｉつである５−ＴＮ方式では配向の不良、ＮＴＮ方式
ではリタデーションの変化による色ぬけ現象、ＥＬパネ
ル等では電極上にコートする絶縁膜の絶縁不良等である
。[Prior Art] The increasing density and capacity of liquid crystal panels, EL panels, etc. has led to an increase in driving frequency, and therefore, reducing the resistance of transparent electrodes has become a very important issue. In order to reduce the resistance of transparent electrodes, improvements in materials and film-forming methods have made it possible to mass-produce transparent electrodes with a specific resistance of 2 X i O-'Ω・m, mainly from TO. auty
This value is no longer sufficient in high frequency driving such as l'/400 duty. Therefore, attempts have been made to reduce the resistance of transparent electrodes by using metal assist, but this has resulted in problems such as increased cost and decreased aperture ratio. The easiest way to reduce the resistance of a transparent electrode is to increase its film thickness, but after electrode patterning, the substrate surface has unevenness equal to the thickness of the electrode, which causes various problems. Ta. That is, in the case of the 5-TN system, which is one of the most common types of liquid crystal displays, problems include alignment defects, in the case of the NTN system, there is a color fading phenomenon due to changes in retardation, and in EL panels and the like, problems include poor insulation of the insulating film coated on the electrodes.
［発明が解決しようとする課Ｍ］
本発明はかかる欠点を解決するための方法を提供するこ
とにある。本発明のプロセスは安価に、それぞれの表示
素子の要求する透明電極の厚み（である。[Problem M to be Solved by the Invention] The object of the present invention is to provide a method for solving such drawbacks. The process of the present invention is inexpensive and can achieve the thickness of the transparent electrode required by each display element.
娠
本発明の透明電極の平台化方法は、
（α）透明基板上にパターン形成された透明電極上に選
択的に無電解又は電気メツキする工程、（ｂ）パーマネ
ント型ネガ型フォトレジストを透明電極のほぼ同厚みに
形成する工程、ｃｃ）ｂ板の裏側から紫外）諷を照射し
、現像により金属上の該レジストをストリップする工程
、（ｄ）露出した金属をエツチング除去する工程（ｒＬ
）〜（ｄ）を少なくとも含むことを特徴とする。The method for flattening a transparent electrode of the present invention includes (α) selective electroless or electroplating on a transparent electrode patterned on a transparent substrate, (b) applying a permanent negative photoresist to a transparent electrode. cc) step of irradiating ultraviolet rays from the back side of the b board and stripping the resist on the metal by development; (d) step of etching away the exposed metal (rL
) to (d).
［課題を解決するための手段］ 本発明を第１図を用いて説明する。[Means to solve the problem] The present invention will be explained using FIG.
第１図（α）において１は透明基板であり、ソーダガラ
ス、ホウケイ酸ガラス、石英ガラス等のガラス類が用い
られ必要に応じてＳｉＯ□、Ａｔ２０、等のパシペイシ
ョン処理がなされる。又ポリエステル、ＰＥＳ等のプラ
スチック材料も用いることができる。２は透明電極であ
り工Ｔｏ 、 ＡＴＯ、ＺｕＯ−Ａｔ２０５等が用いら
れるが現在までところ工ＴＯが最も小さい比抵抗を有し
ており２ Ｘ １０−’Ω・αである。シート抵抗で１
０００又で２００，１０． ２ｏｏｏＸで１０．Ｑ１０
． ５゜００又で約７Ω／口である。”４００ ｄｕｔ
ｙ クラスのＮＴ’Ｎ方式液晶パネルにおいては１０
Ω以下／口が必要である。又ＮＴＮ方式では表面の凹凸
は１ｏｏｏＸ以下が望ましい。スパッタリング法。In FIG. 1 (α), reference numeral 1 denotes a transparent substrate, which is made of glass such as soda glass, borosilicate glass, or quartz glass, and is subjected to passivation treatment with SiO□, At20, etc., if necessary. Plastic materials such as polyester and PES can also be used. Reference numeral 2 is a transparent electrode, and materials such as To, ATO, and ZuO-At205 are used. To date, TO has the lowest specific resistance, which is 2 x 10-'Ω·α. 1 in sheet resistance
000 and 200,10. 10 with 2oooX. Q10
．． Approximately 7Ω/mouth at 5°00. ”400 dut
10 for y-class NT'N liquid crystal panels.
Ω or less/mouth is required. Further, in the NTN method, it is desirable that the surface unevenness be 1 oooX or less. Sputtering method.
蒸着法、ＰＶＤ法等により全面被覆され所定のパターン
にフォトリソグラフィーによりエツチングされる。この
ようにパターニングされた透明電極付き基板に、無電解
メツキ又は電気メツキにより選択的に透明電極のみを金
属被覆することは可能である。無電解メツキによるこの
ような選択メツキは、アクティベーション、センシタイ
ジングの適当な手法を用いることにより可能である。必
要により密着性をアップさせる目的で熱処理を行なって
もよい。Ｎ１−Ｐ、Ｎ１−Ｂ、Ｏｕ、、Ｎｉ−０ｕ−Ｐ
、Ａｕ等の単独膜又は積層膜を用いることができるが、
この金属層は紫外線をカットする目的であるので２００
λ〜１ｏｏｏｏＸ、望ましくは５００〜５ｏｏｏＸが適
当である。The entire surface is covered by a vapor deposition method, a PVD method, etc., and then a predetermined pattern is etched by photolithography. It is possible to selectively coat only the transparent electrodes with metal on the thus patterned substrate with transparent electrodes by electroless plating or electroplating. Such selective plating by electroless plating is possible by using appropriate activation and sensitizing techniques. If necessary, heat treatment may be performed for the purpose of improving adhesion. N1-P, N1-B, Ou, Ni-0u-P
, a single film or a laminated film such as Au can be used,
This metal layer is for the purpose of cutting ultraviolet rays, so
λ~1oooX, preferably 500~5oooX is appropriate.
次に工程（ｂ）はパーマネント型ネガ型フォトレジスト
を透明電極のほぼ同厚みに形成するものである。液晶パ
ネル、ＫＬパネル等の後に続くプロセスに耐える耐熱性
を有していなくてはならない。ポリイミド系、エポキシ
アクリル系等は最適である。代表例として東しフォトニ
ースＵＲ−３１００（東し社製）、セレクティラックス
ＨＴＲ−２（メルク社製）がある。スピンコード、ロー
ルコート、カーテンコート等によりコートされ乾燥され
る。この厚みは透明電極の厚みとほぼ同等であることが
本発明の目的達成からいって必須条件である。透明電極
の厚みに対して±ｏ、 ｏ ５μ以内にするのが望まし
い。Next, in step (b), a permanent negative photoresist is formed to have approximately the same thickness as the transparent electrode. It must have heat resistance that can withstand subsequent processes such as liquid crystal panels and KL panels. Polyimide, epoxy acrylic, etc. are most suitable. Typical examples include Toshi Photonice UR-3100 (manufactured by Toshi Co., Ltd.) and Selectilux HTR-2 (manufactured by Merck & Co., Ltd.). Coated with spin cord, roll coat, curtain coat, etc. and dried. It is an essential condition for achieving the object of the present invention that this thickness be approximately equal to the thickness of the transparent electrode. It is desirable that the thickness be within ±5μ of the thickness of the transparent electrode.
次に工程（０−１）により基板の裏面より紫外線露光さ
れ、光の透過するところだけが硬化される。次に未露光
部が現像ハク離される（図面Ｃ−２）。必要に応じ、後
露光、熱硬化等のレジストをさらに硬化安定化する手段
を追加することもできる。Next, in step (0-1), the back side of the substrate is exposed to ultraviolet light, and only the areas through which the light passes are cured. Next, the unexposed area is developed and peeled off (Drawing C-2). If necessary, means for further curing and stabilizing the resist, such as post-exposure and thermosetting, can be added.
次に工程Ｃｄ）で露出した金属部分をエツチング除去す
る。このエッチャントは透明電極のエツチングとの選択
比の大きなものが選択される。Next, in step Cd), the exposed metal portion is removed by etching. This etchant is selected to have a high etching selectivity for the transparent electrode.
以上の工程（α）〜（ｄ）により電極表面は効＄！！。Through the above steps (α) to (d), the electrode surface becomes effective! ! .
率よく平世−化することが可能となる。It will be possible to quickly transform the world into a normal world.
［実施例］
ＳｉＯ□パシベイションを施した＋ｙ２ｍｍＪｌソーダ
ガラス上に２５００Ｘの工Ｔｏをスパッタリングで被覆
し所定の方法でバターニングした。シート抵抗は５Ω／
口であった。次に基板をｐ ａ ａ ｔ。[Example] 2500X To was coated on +y2mmJl soda glass with SiO□ passivation by sputtering and buttered in a predetermined manner. Sheet resistance is 5Ω/
It was the mouth. Next, paste the substrate.
・Ｓ’ｍＯ４，混合アクティペイターである日立化成社
製Ｈ３’１０１Ｂに５分間浸漬し、さらに水洗後、０．
５Ｎ Ｎａｐ）（溶液に２分間浸漬した後水洗した。- S'mO4, immersed in a mixed actipator H3'101B manufactured by Hitachi Chemical Co., Ltd. for 5 minutes, and after further washing with water, 0.
5N Nap) (soaked in the solution for 2 minutes and then washed with water.
次にカニゼン社製無電解Ｎ１−ＰメツキＳ’−６８０で
１ｏｏｏＸＮｔ−Ｐメツキした。Next, 10ooXNt-P plating was performed using electroless N1-P plating S'-680 manufactured by Kanigen Co., Ltd.
このプロセスによりパターニングされた透明電極上のみ
に選択的にＮ１−Ｐメツキがされ°た。°°°・・・工
程（α）
次にパーマネント型ネガ型フォトレジストであるポリイ
ミド系フォトレジスト東しフォトニースＵＲ−４１００
をスピンコードし約２５００人被覆した。・・・・・・
工程（ｈ） キュアー後基板の裏面より紫外線を照射し
、専用現像液を用い現像し金属上の該レジストをストリ
ップした。・・・・・・工程（Ｃ） 次にＨＮＯ３、Ｈ
２ＳＯ４，０Ｈ８ＯＯＯＨから成るエツチング液でＮ１
−Ｐを除去した。・・・・・・・・・工程Ｃｄ）
［発明の効果コ
（−）〜Ｃｄ）の工程により得られた電極表面像
は２５００Ｘ±１００Ｘの平叫性を有していた。N1-P plating was selectively applied only to the transparent electrode patterned by this process. °°°...Process (α) Next, we applied a polyimide photoresist, which is a permanent negative photoresist, using Photonice UR-4100.
Approximately 2,500 people were coated with spin code.・・・・・・
Step (h) After curing, the substrate was irradiated with ultraviolet rays from the back side, developed using a special developer, and the resist on the metal was stripped.・・・・・・Step (C) Next, HNO3, H
N1 with an etching solution consisting of 2SO4,0H8OOOH
-P was removed. . . . Step Cd) [Effects of the Invention The electrode surface image obtained by the steps C(-) to Cd) had a flat resolution of 2500X±100X.
１艮
もちろんこのように平静化されない電極面は２５県
００Ｘの凹凸を有していた。このような平井化された基
板を用い、ＮＴＮ型２６０°ツイスト液晶パネルを形成
した。本発明のパネルは色むらのない、又ドメインの存
在しない均一配向状態を有し地
ていた。一方平谷化のないものはディスクリネイション
ラインがいたるところに見られた。又本発明パネルは／
４ｏｏ ｄｕｔｙ の駆動によっても全くフリッカ、
表示ムラが生じなかった。従来法では透明電極厚みを２
５００Ｘも形成できずせいぜい１５００Ｘ程度（色ムラ
、ドメイン等が出るため）のため１／４ｏ□ ｄｕｔｙ
駆動においてはフリッカや液晶パネル、ＥＬパネル等
の表示体に用いられるOf course, the electrode surface that was not smoothed in this way had an unevenness of 25 x 00. Using such a flattened substrate, an NTN type 260° twisted liquid crystal panel was formed. The panel of the present invention had a uniform alignment state with no color unevenness and no domains. On the other hand, disclination lines were seen everywhere in those without Hiratani conversion. In addition, the panel of the present invention is/
Even with 4oo duty driving, there is no flicker at all.
No display unevenness occurred. In the conventional method, the thickness of the transparent electrode is 2
1/4o□ duty because it cannot form even 500X and is only about 1500X (because color unevenness, domains, etc. appear)
In driving, it is used for flicker and displays such as liquid crystal panels and EL panels.
第１図は本発明のプロセスフローチャートを示す断面図
。
１・・・・・・透明基板
２・・・・・・透明電極
３゛°°゛°°メツキされた金属
４・・・・・・パーマネント型ネガ型フォトレジストＣ
ｂ）
（Ｃ−１）
以
上
（Ｃ−２）FIG. 1 is a sectional view showing a process flowchart of the present invention. 1...Transparent substrate 2...Transparent electrode 3゛°°゛°°plated metal 4...Permanent negative photoresist C
b) (C-1) Above (C-2)
Claims (1)
る方法において （ａ）透明基板上にパターン形成された透明電極上に選
択的に無電解又は電気メッキする工程（ｂ）パーマネン
ト型ネガ型フォトレジストを透明電極のほぼ同厚みに形
成する工程 （ｃ）基板の裏側から紫外線を照射し、現像により金属
上の該レジストをストリップする工程（ｄ）露出した金
属をエッチング除去する工程（ａ）〜（ｄ）を少なくと
も含むことを特徴とする透明電極の平坦化方法。[Claims] A method for flattening the surface of a transparent electrode patterned on a transparent substrate, including (a) selective electroless or electroplating on the transparent electrode patterned on the transparent substrate (b) ) Step of forming a permanent negative photoresist to approximately the same thickness as the transparent electrode (c) Step of irradiating ultraviolet rays from the back side of the substrate and stripping the resist on the metal by development (d) Etching away the exposed metal A method for flattening a transparent electrode, comprising at least steps (a) to (d).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17790188A JPH0227318A (en) | 1988-07-15 | 1988-07-15 | Flattening method for transparent electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17790188A JPH0227318A (en) | 1988-07-15 | 1988-07-15 | Flattening method for transparent electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0227318A true JPH0227318A (en) | 1990-01-30 |
Family
ID=16039043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17790188A Pending JPH0227318A (en) | 1988-07-15 | 1988-07-15 | Flattening method for transparent electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0227318A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5592318A (en) * | 1993-06-07 | 1997-01-07 | Sharp Kabushiki Kaisha | Liquid crystal display apparatus having an inorganic filler between pixel electrodes and a method for producing the same |
| US7382420B2 (en) * | 2002-03-28 | 2008-06-03 | Sharp Kabushiki Kaisha | Substrate for liquid crystal display device, liquid crystal display device provided with the same, and manufacturing method of the same |
| JP2010219497A (en) * | 2009-02-20 | 2010-09-30 | Sumitomo Metal Mining Co Ltd | Method for manufacturing substrate for semiconductor device, method for manufacturing semiconductor device, substrate for semiconductor device, and semiconductor device |
-
1988
- 1988-07-15 JP JP17790188A patent/JPH0227318A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5592318A (en) * | 1993-06-07 | 1997-01-07 | Sharp Kabushiki Kaisha | Liquid crystal display apparatus having an inorganic filler between pixel electrodes and a method for producing the same |
| US7382420B2 (en) * | 2002-03-28 | 2008-06-03 | Sharp Kabushiki Kaisha | Substrate for liquid crystal display device, liquid crystal display device provided with the same, and manufacturing method of the same |
| US7782410B2 (en) | 2002-03-28 | 2010-08-24 | Sharp Kabushiki Kaisha | Substrate for liquid crystal display device, liquid crystal display device provided with the same, and manufacturing method of the same |
| US7932963B2 (en) | 2002-03-28 | 2011-04-26 | Sharp Kabushiki Kaisha | Substrate for liquid crystal display device, liquid crystal display device provided with the same, and manufacturing method of the same |
| JP2010219497A (en) * | 2009-02-20 | 2010-09-30 | Sumitomo Metal Mining Co Ltd | Method for manufacturing substrate for semiconductor device, method for manufacturing semiconductor device, substrate for semiconductor device, and semiconductor device |
| US8188588B2 (en) | 2009-02-20 | 2012-05-29 | Sumitomo Metal Mining Co., Ltd. | Manufacturing method of substrate for a semiconductor package, manufacturing method of semiconductor package, substrate for a semiconductor package and semiconductor package |
| US9054116B2 (en) | 2009-02-20 | 2015-06-09 | Sh Materials Co., Ltd. | Manufacturing method of substrate for a semiconductor package, manufacturing method of semiconductor package, substrate for a semiconductor package and semiconductor package |
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