JPH0226782B2 - - Google Patents

Info

Publication number
JPH0226782B2
JPH0226782B2 JP57168194A JP16819482A JPH0226782B2 JP H0226782 B2 JPH0226782 B2 JP H0226782B2 JP 57168194 A JP57168194 A JP 57168194A JP 16819482 A JP16819482 A JP 16819482A JP H0226782 B2 JPH0226782 B2 JP H0226782B2
Authority
JP
Japan
Prior art keywords
wire
vacuum
alloy
thin
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57168194A
Other languages
Japanese (ja)
Other versions
JPS5957441A (en
Inventor
Hideaki Yoshida
Masaki Morikawa
Naoyuki Hosoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP57168194A priority Critical patent/JPS5957441A/en
Publication of JPS5957441A publication Critical patent/JPS5957441A/en
Publication of JPH0226782B2 publication Critical patent/JPH0226782B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01083—Bismuth [Bi]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To bond a wire with excellent workability and high reliability at low cost, and to obtain the thin wire, through which there exists no problem on the embrittlement of a joining section and high bonding strength can be ensured, by making a specific quantity of Bi contain therein. CONSTITUTION:An alloy having a composition, which contains 0.001-0.20wt%. Bi and contains one kind or more of 0.5-1.5% Si and 0.2-2.5% Mg as required and the remainder therein consists of Al and inevitable impurities, is used. For example, molten metal having said constituent is prepared through a vacuum fusion method and casted to billet, and faced, cold rolling of a 50% section draft is executed by using a channel type roll, and the rolled material is worked to a wire rod through the repetition of the annealing of heating and holding at a temperature of 550 deg.C in vacuum. Peeling working is executed to the wire rod, the wire drawing working of a 50% cross-section contraction and the annealing of heating and holding at a temperature of 550 deg.C in vacuum are repeated by using a die, and the Al alloy thin wire is manufactured.

Description

【発明の詳細な説明】[Detailed description of the invention]

この発明は、半導体装置の製造に際して施され
るワイヤ・ボンデイングに使用するのに適した
Al合金細線に関するものである。 従来、一般に、LSIやICなどの半導体装置の製
造に際しては、例えば直径５cm以上のウエハから
切断された数ミリ角の半導体チツプを、リードフ
レームあるいはセラミツク基板にAu細線あるい
はAl細線を用いてワイヤ・ボンデイングするこ
とが行なわれている。また、ワイヤ・ボンデイン
グに際しては、Au細線は、その先端部を水素燃
焼トーチで加熱するか、あるいは細線先端部と電
極との間で放電を起させて加熱し、しかる後リー
ドフレームや基板に熱圧着することが行なわれ
る。この場合、Au細線は、先端部がボール状を
呈するので、あらゆる方向へのボンデイング（ボ
ールボンデイング）が可能であるが、反面半導体
チツプへのボンデイングが前記チツプ上面に設け
たAlパツドを介して行なわれるため、その接合
界面に脆いAlとAuの金属間化合物が生成するよ
うになることから、脆化が問題となつており、さ
らにAu細線自体が高価であるためコスト高とな
る問題点がある。一方Al細線の使用によつてAu
細線における脆化およびコスト高の問題は解消す
るが、Al細線の場合は、前記の方法では、その
加熱先端部が常に一定形状のボール状にならず、
このためボールボンデイングを行なうことができ
なかつた。したがつてボンデイングに際しては、
Al細線の方向に合せて基板を回転させて接合を
行なう超音波接合法を用いなければならないこと
から、ボンデイング速度が遅くなり、作業性の悪
いものであつた。 そこで、本発明者等は、上記の脆化の問題がな
く、かつコストの安い半導体装置のワイヤ・ボン
デイング用Al細線に着目し、その加熱先端部を
常に安定形状のボール状とし、もつて方向性なく
ワイヤ・ボンデイングの実施を可能とし、作業性
の改善を図るべく、特に材料面から研究を行なつ
た結果、Al細線の加熱先端部が安定的に一定形
状のボール状を呈さないのは、加熱雰囲気中に存
在する微量の酸素によつて、その表面に堅固な酸
化皮膜が生成し、この酸化皮膜がボールの形成を
阻止することに原因するものであるという結論に
達し、しかも合金成分としてBiを含有させると、
加熱先端部に酸化皮膜が形成するのが抑制され、
この結果加熱先端部が一定形状のボール状を常に
呈するようになり、さらにSiおよびMgのうちの
１種または２種を合金成分として含有させると、
細線自体の強度が著しく向上するようになること
から極細線の製造が可能になるという知見を得る
に至つたのである。 したがつて、この発明は、上記知見にもとづい
てなされたものであつて、重量％で、Bi：0.001
〜0.20％を含有し、さらに必要に応じてSi：0.5〜
1.5％およびMg：0.2〜2.5％のうちの１種または
２種を含有し、残りがAlと不可避不純物からな
る組成を有する半導体装置のワイヤ・ボンデイン
グ用Al合金細線に特徴を有するものである。 つぎに、この発明のAl合金細線において、成
分組成範囲を上記の通りに限定した理由を説明す
る。 (a) Bi Bi成分には、上記の通り加熱先端部に酸化
皮膜が形成されるのを阻止し、もつて加熱先端
部を一定形状のボール状とする作用があるが、
その含有量が0.001％未満では前記作用に所望
の効果が得られず、一方0.20％を越えて含有さ
せると線引き加工性が低下するようになること
から、その含有量を0.001〜0.20％と定めた。 (b) SiおよびMg これらの成分は、いずれも細線自体の強度を
向上させ、もつて極細線の加工を可能にする作
用があるので、特に直径：60μｍ以下の極細線
を製造する場合に必要に応じて含有されるが、
その含有量がそれぞれSi：0.5％未満および
Mg：0.2％未満では前記作用に所望の効果が得
られず、一方Siにあつては1.5％、またMgにあ
つては2.5％を越えて含有させると、再び極細
線への線引き加工が困難になることから、その
含有量を、それぞれSi：0.5〜1.5％、Mg：0.2
〜2.5％と定めた。 つぎに、この発明のAl合金細線を実施例によ
り具体的に説明する。 実施例 通常の真空溶解法によりそれぞれ第１表に示さ
れる成分組成をもつた溶湯を調製し、直径：55mm
φ×長さ：150mmのビレツトに鋳造し、面削して
直径：50mmφ×長さ：140mmの寸法とし、ついで
溝型ロールを使用し、断面加工率：50％の冷間圧
延を施した後、真空中、温度：550℃に加熱保持
の焼鈍を１サイクルとして、所定サイクルを施す
ことによつて直径：８mmφの線材に加工し、引続
いて、この線材にダイスにより皮むき加工を施し
て直径：7.5mmφとした後、ダイスを使用し、断
面加工率：50％の線引き加工、および真空中、温
度：550℃に加熱保持の焼鈍を１サイクルとする
線引き加工を所定サイクル施すことによつて、そ
れぞれ第１表に示される最終直径（70μｍおよび
30μｍ）を有する本発明Al合金細線１〜15および
比較Al合金細線１〜３をそれぞれ製造した。 ついで、この結果得られた本発明Al合金細線
１〜15および比較Al合金細線１〜３について、
Ar雰囲気中にて、細線先端部と対向電極との間
で放電を発生させて、これを加熱溶融し、この細
線先端部のボール成形性を実体顕微鏡（50倍）を
用いて観察した。これを1000回繰り返し行ない、
細線先端部のボール成形に異形（球形がくずれた
形状）が発生する回数を測定した。 また、上記本発明Al合金細線１〜15および比
較Al合金細線１〜３を、それぞれ支持板上に保
持されたAlパツド付Siチツプの上面にサーモソ
ニツクボンデイング法を用い、前記支持板を300
℃に加熱した状態で接合し、接合部の剪断強度を
測定した。これらの結果を第１表に合せて示し
た。なお、剪断強度は試験回数：５回の平均値で
示した。 第１表において、同一の最終直径（70μｍまた
は30μｍ）を有する細線相互の比較から明らかな
ように、本発明Al合金細線１〜15は、いずれも
ボール成形性にすぐれ、したがつてワイヤ・ボン
デイングにおいても、Au細線を使用した場合と
同 This invention is suitable for use in wire bonding performed during the manufacture of semiconductor devices.
This relates to Al alloy fine wire. Conventionally, when manufacturing semiconductor devices such as LSIs and ICs, semiconductor chips of several millimeters square, cut from a wafer with a diameter of 5 cm or more, are wired using thin Au or Al wires on a lead frame or ceramic substrate. Bonding is performed. In addition, during wire bonding, the tip of the Au thin wire is heated with a hydrogen combustion torch, or by generating an electric discharge between the tip of the thin wire and the electrode, and then the lead frame or substrate is heated. Crimping is performed. In this case, since the tip of the Au thin wire has a ball shape, bonding in all directions (ball bonding) is possible, but on the other hand, bonding to the semiconductor chip is performed via the Al pad provided on the top surface of the chip. As a result, a brittle intermetallic compound of Al and Au is formed at the bonding interface, resulting in embrittlement, and furthermore, the fine Au wire itself is expensive, resulting in high costs. . On the other hand, by using Al thin wire, Au
Although the problems of embrittlement and high cost in thin wires are solved, in the case of thin Al wires, the heating tip does not always form a ball shape with the above method, and
For this reason, ball bonding could not be performed. Therefore, when bonding,
Since it is necessary to use an ultrasonic bonding method in which bonding is performed by rotating the substrate in accordance with the direction of the thin Al wire, the bonding speed is slow and workability is poor. Therefore, the present inventors focused on a thin Al wire for wire bonding of semiconductor devices, which does not have the above-mentioned embrittlement problem and is low in cost. In order to make wire bonding possible without any problems and improve workability, we conducted research in particular from the material aspect, and found that the heated tip of the Al thin wire does not stably form a ball shape. They came to the conclusion that the small amount of oxygen present in the heated atmosphere causes a hard oxide film to form on the surface, and this oxide film prevents the formation of balls. When Bi is included as
The formation of an oxide film on the heating tip is suppressed,
As a result, the heating tip always takes on a ball-like shape, and when one or both of Si and Mg are included as alloy components,
This led to the discovery that the strength of the thin wire itself was significantly improved, making it possible to manufacture ultra-fine wires. Therefore, this invention was made based on the above knowledge, and Bi: 0.001 in weight%.
Contains ~0.20%, and if necessary Si: 0.5~
1.5% and one or two of Mg: 0.2 to 2.5%, and the remainder is Al and unavoidable impurities. Next, the reason why the composition range of the Al alloy thin wire of the present invention is limited as described above will be explained. (a) Bi The Bi component has the effect of preventing the formation of an oxide film on the heating tip as described above and making the heating tip a ball-like shape of a certain shape.
If the content is less than 0.001%, the desired effect cannot be obtained, while if the content exceeds 0.20%, the wire drawing processability will deteriorate, so the content is set at 0.001 to 0.20%. Ta. (b) Si and Mg Both of these components have the effect of improving the strength of the thin wire itself and making it possible to process ultra-fine wires, so they are especially necessary when manufacturing ultra-fine wires with a diameter of 60 μm or less. Contained depending on the
Its content is Si: less than 0.5% and
Mg: If the content is less than 0.2%, the desired effect cannot be obtained, while if the Si content exceeds 1.5%, and if the Mg content exceeds 2.5%, it becomes difficult to draw into ultra-fine wire again. Therefore, the content is Si: 0.5-1.5%, Mg: 0.2%, respectively.
It was set at ~2.5%. Next, the Al alloy fine wire of the present invention will be specifically explained using examples. Example: Molten metals having the compositions shown in Table 1 were prepared by a normal vacuum melting method, and the diameter was 55 mm.
It was cast into a billet of φ x length: 150 mm, face-milled to have dimensions of diameter: 50 mm φ x length: 140 mm, and then cold rolled using a grooved roll with a cross-section processing rate of 50%. The wire was processed into a wire rod with a diameter of 8 mmφ by performing a predetermined cycle of annealing at a temperature of 550°C in a vacuum, followed by peeling with a die. After setting the diameter to 7.5mmφ, the wire was drawn using a die at a cross-sectional processing rate of 50%, and one cycle of annealing at a temperature of 550°C in vacuum was performed for a specified number of cycles. The final diameters (70 μm and 70 μm and
Inventive Al alloy thin wires 1 to 15 and comparative Al alloy thin wires 1 to 3 having a diameter of 30 μm) were manufactured, respectively. Next, regarding the present invention Al alloy thin wires 1 to 15 and comparative Al alloy thin wires 1 to 3 obtained as a result,
In an Ar atmosphere, a discharge was generated between the tip of the thin wire and the counter electrode to heat and melt it, and the ball formability of the tip of the thin wire was observed using a stereomicroscope (50x magnification). Repeat this 1000 times,
The number of times that an irregular shape (a shape in which the spherical shape is distorted) occurs in the ball molding at the tip of the thin wire was measured. In addition, the above-mentioned Al alloy fine wires 1 to 15 of the present invention and comparison Al alloy thin wires 1 to 3 were each attached to the upper surface of a Si chip with an Al pad held on a support plate using a thermosonic bonding method.
They were joined while heated to 0.degree. C., and the shear strength of the joint was measured. These results are also shown in Table 1. In addition, the shear strength was shown as the average value of the number of tests: 5 times. As is clear from the comparison of thin wires having the same final diameter (70 μm or 30 μm) in Table 1, Al alloy thin wires 1 to 15 of the present invention all have excellent ball formability, and therefore are suitable for wire bonding. In this case, the same result as when using Au thin wire is obtained.

【表】 等、あるいはこれ以上の高い接合強度が得られる
のに対して、Bi成分を含有しない比較Al合金細
線１〜３においては、いずれもボール成形性が悪
く、この結果接合強度の低いものになつている。 上述のように、この発明のAl合金細線によれ
ば、Bi成分の含有によつてボール成形性のすぐ
れたものになつているので、作業性よく、かつ高
い信頼性と低コストでワイヤ・ボンデイングを行
なうことができるばかりでなく、接合部分の脆化
の問題もなく、さらにAu細線と同等あるいはこ
れ以上の高い接合強度を確保することができるな
ど工業上有用な効果がもたらされるのである。[Table] On the other hand, comparative Al alloy fine wires 1 to 3 that do not contain Bi components have poor ball formability, and as a result, the bond strength is low. It's getting old. As mentioned above, the Al alloy thin wire of the present invention has excellent ball formability due to the inclusion of the Bi component, so it can be wire bonded with good workability, high reliability, and low cost. Not only can this be done, but there is no problem of embrittlement of the bonded part, and it also has industrially useful effects such as being able to secure a bonding strength equal to or greater than that of thin Au wires.

Claims (1)

【特許請求の範囲】 １ Bi：0.001〜0.20％を含有し、残りがAlと不
可避不純物からなる組成（以上重量％）を有する
ことを特徴とする半導体装置のワイヤ・ボンデイ
ング用Al合金細線。 ２ Bi：0.001〜0.20％を含有し、さらにSi：0.5
〜1.5％およびMg：0.2〜2.5％のうちの１種また
は２種を含有し、残りがAlと不可避不純物から
なる組成（以上重量％）を有することを特徴とす
る半導体装置のワイヤ・ボンデイング用Al合金
細線。[Claims] 1. An Al alloy fine wire for wire bonding of semiconductor devices, characterized in that it contains 0.001 to 0.20% of Bi, and the remainder consists of Al and unavoidable impurities (weight percent). 2 Contains Bi: 0.001 to 0.20%, and further contains Si: 0.5
~1.5% and one or two of Mg: 0.2 to 2.5%, with the remainder consisting of Al and unavoidable impurities (weight %) for wire bonding of semiconductor devices. Al alloy fine wire.
JP57168194A 1982-09-27 1982-09-27 Al alloy thin wire for wire-bonding of semiconductor device Granted JPS5957441A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57168194A JPS5957441A (en) 1982-09-27 1982-09-27 Al alloy thin wire for wire-bonding of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57168194A JPS5957441A (en) 1982-09-27 1982-09-27 Al alloy thin wire for wire-bonding of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5957441A JPS5957441A (en) 1984-04-03
JPH0226782B2 true JPH0226782B2 (en) 1990-06-12

Family

ID=15863525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57168194A Granted JPS5957441A (en) 1982-09-27 1982-09-27 Al alloy thin wire for wire-bonding of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5957441A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008260975A (en) * 2007-04-10 2008-10-30 Sumitomo Light Metal Ind Ltd Aluminum-magnesium alloy with inhibited oxidation of molten metal

Also Published As

Publication number Publication date
JPS5957441A (en) 1984-04-03

Similar Documents

Publication Publication Date Title
JP4482605B1 (en) High purity Cu bonding wire
EP0922780B1 (en) Method of manufacturing a high purity hard gold alloy
JPS62228440A (en) Gold wire for semiconductor device bonding
JPH0379416B2 (en)
JPS60162741A (en) Bonding wire
JPH0520494B2 (en)
JPH02170937A (en) Copper alloy having superior direct bonding property
JPS59139663A (en) Cu-alloy fine wire for wire bonding on semiconductor device
JPS62104061A (en) Bonding wire for semiconductor element and manufacture thereof
JPH0226782B2 (en)
JPS63235440A (en) Fine copper wire and its production
JPS6365036A (en) Fine copper wire and its production
JPS6030158A (en) Bonding wire
JPS5816041A (en) High-tensile fine au alloy wire
JPH0726167B2 (en) Au alloy extra fine wire for bonding wire of semiconductor device
JPS5896741A (en) High tensile au alloy small-gage wire for connecting semiconductor elements
JPH0464121B2 (en)
JPS62127436A (en) Bonding wire for semiconductor device
JPS61110735A (en) Cold alloy having superior heat resistance
JPH0888242A (en) Bonding wire
JPS62127437A (en) Bonding wire for semiconductor device
JPS5965439A (en) Bonding wire
JPH02251155A (en) Gold alloy thin wire for semiconductor elements and bonding method thereof
JP2661247B2 (en) Gold alloy fine wire for semiconductor element bonding
JPS61136653A (en) Hyperfine aluminum wire