JPH02262955A - Method of cutting si ingot by wire saw - Google Patents
Method of cutting si ingot by wire sawInfo
- Publication number
- JPH02262955A JPH02262955A JP1017596A JP1759689A JPH02262955A JP H02262955 A JPH02262955 A JP H02262955A JP 1017596 A JP1017596 A JP 1017596A JP 1759689 A JP1759689 A JP 1759689A JP H02262955 A JPH02262955 A JP H02262955A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- ingot
- cutting
- case
- processing liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 7
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 239000002253 acid Substances 0.000 claims abstract description 12
- 239000012530 fluid Substances 0.000 claims description 27
- 238000003754 machining Methods 0.000 claims description 18
- 230000002378 acidificating effect Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000006061 abrasive grain Substances 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/02—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing
- B28D1/025—Use, recovery or regeneration of abrasive mediums
Landscapes
- Engineering & Computer Science (AREA)
- Mining & Mineral Resources (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は加工液あるいは砥粒と反応するＳｉインゴッ
トをワイヤを用いて切断する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method of cutting a Si ingot that reacts with processing fluid or abrasive grains using a wire.
従来の技術
従来のＳｉのインゴットの切断法は内周刃で切断してい
るが、直径が６インチまでは反りが１５μｍ以下で切断
可能であるが、８インチ以上では内周刃の剛性が保てず
、反りが１５μｍを越え品質上好ましくない、ダイヤモ
ンドの固定砥粒で切断するため、加工変質層は３０μｍ
を越える。Conventional technology The conventional cutting method for Si ingots involves cutting with an inner peripheral blade, but it is possible to cut with diameters up to 6 inches with a warp of 15 μm or less, but the rigidity of the inner peripheral blade is not maintained for diameters of 8 inches or more. Since the cutting is done with diamond fixed abrasive grains, the warpage exceeds 15 μm, which is unfavorable in terms of quality.
exceed.
また従来の遊離砥粒によるワイヤソーの８１インゴツト
の切断法（例えば５６３Ｍ密工学会秋季大会学術講演会
高能率・高精度マルチワイヤソーの開発）は、ワイヤ
送り速度を４００ｍ／ｍｉｎから１２００ｍ／ｍｉｎの
高速度にしなければ、Ｏｙ７ｍｍ／ｍｉｎの高切断速度
が得られない、ワイヤ送り速度を高速度にすればワイヤ
の摩耗やリールの摩耗が激しい問題点がある。また砥粒
は直接Ｓｉインゴット表面のシリコン酸化膜に当たる為
、垂直荷重が高く、このため加工変質層が深い問題点が
ある。In addition, the conventional method of cutting 81 ingots with a wire saw using free abrasive grains (for example, the 563M Secret Engineering Society Autumn Conference Academic Lecture Development of a Highly Efficient and Highly Accurate Multi-Wire Saw) requires a wire feed speed of 400 m/min to 1200 m/min. If the wire feeding speed is not increased, a high cutting speed of 7 mm/min cannot be obtained, and if the wire feeding speed is increased, there is a problem in that the wire and the reel are severely worn. In addition, since the abrasive grains directly hit the silicon oxide film on the surface of the Si ingot, the vertical load is high, which causes the problem of a deep process-affected layer.
発明が解決しようとする課題
上記問題に鑑み、本願発明はワイヤソーを用いて高切断
速度でＳｉインゴットを切断する方法を提供することを
目的とする。Problems to be Solved by the Invention In view of the above problems, an object of the present invention is to provide a method for cutting a Si ingot at a high cutting speed using a wire saw.
課題を解決するための手段
本発明はＳｉインゴットを切断する方法において、ワイ
ヤを用い、砥粒を加工液に加えた遊離砥粒を用いるとと
もに、前記加工液のＰＨをアルカリの加工液の場合はＰ
Ｈ９以上、酸の加工液の場合はＰＨ６からＰＨ３、前記
加工液の温度は前記アルカリの加工液の場合は３０℃か
ら８０℃、前記酸の加工液の場合は２５℃から６５℃と
することにより、高切断速度でＳｉインゴットの切断を
可能とするものである。Means for Solving the Problems The present invention provides a method for cutting a Si ingot using a wire, using free abrasive grains added to a machining fluid, and adjusting the pH of the machining fluid in the case of an alkaline machining fluid. P
H9 or above, PH6 to PH3 in the case of acidic machining fluid, and temperature of the machining fluid from 30°C to 80°C in the case of the alkaline machining fluid, and 25°C to 65°C in the case of the acidic machining fluid. This makes it possible to cut a Si ingot at a high cutting speed.
作用
以下本発明について詳細に説明する０本発明による被切
断物はＳｌの加工液あるいは砥粒と反応するインゴット
で、直径が３から１０インチで長さが３００から２００
０ｍｍの８１単結晶の円柱である。Function The present invention will be described in detail below. The object to be cut according to the present invention is an ingot that reacts with Sl working fluid or abrasive grains, and has a diameter of 3 to 10 inches and a length of 300 to 200 mm.
It is a cylinder of 81 single crystal with a diameter of 0 mm.
ワイヤソーの機構を第１図に示す、テーブル９上に固定
されたＳｉインゴット１を、テーブル９を方向８に押し
あげることによりワイヤ２に接触させる。ワイヤ２は加
工液がアルカリの場合はピアノ線でもよく、前記加工液
が酸の場合はアモルファス線を用いる。ワイヤの線径は
０．０８ｍｍから０．２５ｍｍを用いる。前記ワイヤ２
には右巻き取りリール３と左巻き取りリール４により一
定の張力Ｔをかけ、かつ右巻き取りリール３で巻き取り
、左巻き取りリール４に巻きつけられたワイヤがなくな
れば反転し、左巻き取りリール４で巻き取る。The mechanism of the wire saw is shown in FIG. 1. A Si ingot 1 fixed on a table 9 is brought into contact with a wire 2 by pushing up the table 9 in a direction 8. The wire 2 may be a piano wire if the working fluid is alkaline, or an amorphous wire if the working fluid is acid. The diameter of the wire used is 0.08 mm to 0.25 mm. The wire 2
A constant tension T is applied to the wire by the right take-up reel 3 and the left take-up reel 4, and the wire is wound by the right take-up reel 3. When the wire wound around the left take-up reel 4 runs out, it is reversed and the left take-up reel 4 Wind it up.
加工液７はアルカリの場合はＰＨ９以上を用い、ＫＯＨ
かＮａＯＨが適しており、温度は３０℃〜８０℃がよい
、酸の場合はＰＨ６から３が良く、ＨＦにＨＮＯ３を加
えた加工液が適しており、温度は２５℃から６５℃がよ
い。加工液７はノズル６によりＳｉインゴット１上に供
給する。If processing fluid 7 is alkaline, use pH 9 or higher, KOH
or NaOH is suitable, and the temperature is preferably 30°C to 80°C; in the case of acids, the pH is preferably 6 to 3; a processing fluid containing HF and HNO3 is suitable; the temperature is preferably 25°C to 65°C. The processing liquid 7 is supplied onto the Si ingot 1 through the nozzle 6.
第２図に第１図のワイヤ送り方向から見たＳｉインゴッ
ト１の切断の図を示す０本発明の最も特徴とするところ
は、加工液７にＳｉまたはＳｉの酸化物と化学反応を起
こすアルカリまたは酸と砥粒を懸濁した溶液を使用する
点にある。砥粒ｌ。FIG. 2 shows a diagram of cutting the Si ingot 1 seen from the wire feeding direction in FIG. Alternatively, a solution containing acid and abrasive grains is used. Abrasive grain l.
は例えばＳｉＣでもよく、アルミナでもよい。砥粒サイ
ズは＃３００から＃２０００がよい。may be, for example, SiC or alumina. The abrasive grain size is preferably #300 to #2000.
第２図に示すように、加工液７は既に切断された満１２
の中に供給され、満１２の底にいたる。As shown in FIG.
It is supplied to the bottom of the full 12.
加工液７に含まれるアルカリまたは酸により満１２の底
のＳｉまたはＳｉの酸化物は反応し、反応生成物１１を
作る０反応生成物は加工液７に゛より生成するが、Ｓｉ
またはＳｉの酸化物と化学反応を起こすＢ ａ ＣＯ＊
、Ｃａ ＣＯｓ等の砥粒を用いて反応生成物１１を作る
ことも可能である。The alkali or acid contained in the machining fluid 7 reacts with Si or Si oxide, and the reaction product 11 is produced by the machining fluid 7, but Si
Or B a CO * which causes a chemical reaction with Si oxide
It is also possible to make the reaction product 11 using abrasive grains such as , Ca 2 COs, etc.
この反応生成物とワイヤの間に砥粒１ｏが入り、Ｓｉイ
ンゴット１は押し上げ方向８に押し上げられる為、張力
Ｔにより張られたワイヤ２より反力を受け、砥粒ｌＯは
反応生成物１１に押しつけられる。同時にワイヤ２は第
２図の紙面直角方向に送られている為、砥粒１ｏはＳｉ
の母材よりはるかに脆くなった反応生成物１１を容易に
削る。The abrasive grains 1o enter between the reaction product and the wire, and the Si ingot 1 is pushed up in the push-up direction 8, so it receives a reaction force from the tensioned wire 2 due to the tension T, and the abrasive grains 1o move into the reaction product 11. Being forced. At the same time, since the wire 2 is fed in the direction perpendicular to the plane of the paper in FIG. 2, the abrasive grains 1o are
The reaction product 11, which has become much more brittle than the base material, can be easily scraped.
反応生・酸物１１は脆く、容易に削れるため、第３図に
示す様にワイヤ２がＳｉインゴット１に接している切断
中１４で押し上げ荷重１５をｖｌった垂直荷重Ｗは２ｇ
／ｍｍ以下でも、Ｓｉインゴット１の上昇速度（切断速
度という）は０．５ｍｍ／ ｍ ｉ ｎから２．０ｍｍ
／ｍｉ ｎの高い値が得られる。垂直荷重Ｗは０．２ｇ
／ｍｍ〜２ｇ／１ｍとするのが望ましい。Since the reaction product/acid 11 is brittle and can be easily scraped, the vertical load W, which is equal to the push-up load 15 during cutting 14 when the wire 2 is in contact with the Si ingot 1, is 2 g as shown in FIG.
/mm or less, the rising speed (referred to as cutting speed) of the Si ingot 1 is 0.5mm/min to 2.0mm.
A high value of /min can be obtained. Vertical load W is 0.2g
It is desirable to set it as /mm - 2g/1m.
第２図の加工変質層１８は１５＃Ｌｍ以下である。この
時のワイヤの送り速度は５００ ｍ／ｍｉｎ以下であり
、低速でＳｉインゴットの切断ができる。The process-affected layer 18 in FIG. 2 has a thickness of 15 #Lm or less. The wire feeding speed at this time is 500 m/min or less, and the Si ingot can be cut at low speed.
また前記垂直荷重Ｗが低いため、水平分力１３も低く、
張力Ｔによりワイヤに作用する応力は２０ｋｇ／ｍｍ２
の低い値でもワイヤの直線性が良く、もちろん高い応力
は破断応力の３００ｋｇ／ｍｍ２まで使用でき、第４図
に示すように切断後の８１ウエハ１６を平面上にａいて
最も低いところと最も高いところの差である反り１７は
１０ＪＬｍ以下である。Furthermore, since the vertical load W is low, the horizontal component force 13 is also low.
The stress acting on the wire due to tension T is 20 kg/mm2
The straightness of the wire is good even with a low value of , and of course high stress can be used up to the breaking stress of 300 kg/mm2. However, the difference in warpage 17 is less than 10 JLm.
第１図では一木のワイヤでＳｉインゴットを切断してい
る図を示したが、アイドラリール５をインゴットの長さ
に対応させて多段に配置することにより、同時に複数枚
の切断が可能である。Figure 1 shows a Si ingot being cut with a single piece of wire, but by arranging the idler reel 5 in multiple stages corresponding to the length of the ingot, it is possible to cut multiple pieces at the same time. .
加工液はアルカリの場合はＰＨ９以上でＳｉまたはＳｉ
の酸化物との反応が進む、アルカリはＫＯＨかＮａＯＨ
の水溶液が好ましく、３０℃未満では切断速度が０．５
ｍｍ／ｍｉｎ以下となり、８０℃超ではＳｉウェハの表
面が荒れる。Ｓの場合はＰＨ６超では切断速度が０．５
ｍｍ／ｍｉｎ以下となり、ＰＨ３未満ではアモルファス
線を用いても腐食がおこり断線する。酸の種類はＨＦに
ＨＮＯ３を加えた水溶液が好ましく、２５℃未満では切
断速度が０．５ｍｍ／ｍｉ ｎ以下となり、６５℃超で
はＳｉウェハの表面が荒れる。但し酸を溶液に用いる場
合は耐蝕性のある塩化ビニール等を機器に用いる。If the machining fluid is alkaline, it has a pH of 9 or higher and is Si or Si
The alkali is KOH or NaOH.
An aqueous solution of
mm/min or less, and if it exceeds 80°C, the surface of the Si wafer becomes rough. In the case of S, the cutting speed is 0.5 when the pH is over 6.
mm/min or less, and if the pH is less than 3, even if an amorphous wire is used, corrosion will occur and the wire will break. The type of acid is preferably an aqueous solution of HF and HNO3; if the temperature is less than 25°C, the cutting speed will be 0.5 mm/min or less, and if it exceeds 65°C, the surface of the Si wafer will become rough. However, when using acid as a solution, use corrosion-resistant vinyl chloride, etc. for the equipment.
切断速度は２．０ｍｍ／ｍｉ ｎを越えると反りが１０
ＪＬｍを越える。垂直荷重Ｗは０．２ｇ／ｍｍ以下では
切断速度が０．５ｍｍ／ｍｉｎ以下となり、２ ｇ ／
ｍ ｍでは加工変質層が１５ｐｍを越える。ワイヤ張
力Ｔによる応力は３００ｋｇ／ｍｍ２越えると断線する
し、２０ ｋ ｇ ／ ｍ ｍ ２未満であると反りが
１０ｇｍを越える。従ってウェハの反りを優先すれば高
い応力が適し、ワイヤー寿命を優先すれば低い応力が適
している。砥粒サイズは＃３００以下では切断面が荒れ
、＃ ２０００以上では垂直荷重Ｗが増加し、反りは１
５ＪＬｍ以上になる。ワイヤ線径は０．０８ｍｍφ以下
では、反りを１５１Ｌｍ以下にするために張力Ｔを上げ
応力を３００ ｋ ｇ／ｍｍ２とする必要があり、断線
する。０．２５ｍｍφ以上では切断による切り代が多く
実用性にとぼしい。If the cutting speed exceeds 2.0mm/min, the warpage will be 10%.
Exceed JLm. If the vertical load W is 0.2 g/mm or less, the cutting speed will be 0.5 mm/min or less, and 2 g/mm.
In mm, the process-affected layer exceeds 15 pm. If the stress due to the wire tension T exceeds 300 kg/mm2, the wire will break, and if it is less than 20 kg/mm2, the warp will exceed 10 gm. Therefore, if priority is given to warping of the wafer, high stress is suitable, and if priority is given to wire life, low stress is suitable. If the abrasive grain size is less than #300, the cut surface will be rough, and if it is more than #2000, the vertical load W will increase and the warpage will be 1.
It will be more than 5JLm. If the wire diameter is 0.08 mmφ or less, it is necessary to increase the tension T to a stress of 300 kg/mm2 in order to reduce the warpage to 151 Lm or less, and the wire will break. If the diameter is 0.25 mm or more, there will be a large amount of cutting allowance, making it impractical.
実施例
実施例１
５ｉｎのＳｉインゴットを以下の条件で切断した。即ち
加工液はＫＯＨ水溶液でＰＨ１２、温度５０℃、垂直筒
ｆｆ１Ｗは１ｇ７ｍｍ、砥粒はＧＣの＃８００、ワイヤ
は線径が０．１２ｍｍφのピアノ線で張力は１．０ｋｇ
（応力８８．４ｋｇ／ｍｍ２）である、その結果、切断
速度２．０ｍｍ／ ｍ ｉ ｎ、反り５．８．ｇｍ、加
工変質層９１ＬｍのＳｉウェハを得られた。Examples Example 1 A 5-inch Si ingot was cut under the following conditions. That is, the processing fluid is a KOH aqueous solution with a pH of 12, the temperature is 50°C, the vertical cylinder ff1W is 1g7mm, the abrasive grain is GC #800, the wire is a piano wire with a wire diameter of 0.12mmφ, and the tension is 1.0kg.
(stress: 88.4 kg/mm2), cutting speed: 2.0 mm/min, warpage: 5.8. A Si wafer with a thickness of 91Lm and a process-affected layer of 91Lm was obtained.
実施例２
８ｉｎのＳｉインゴットを以下の条件で切断した。即ち
加工液はＫＯＨ水溶液でＰＨ１４、温度４５℃、垂直荷
重Ｗは２ ｇ ／ ｍ ｍ、砥粒はＧＣの＃６００、ワ
イヤは線径が０．１８ｍｍφのピアノ線で張力は１．５
ｋｇ（応力５８．９ｋｇ／ｍｍ２）である、その結果、
切断速度１．５ｍｍ／ ｍ Ｅ ｎ、反り９．５ｇｍ、
加工変質層１３ｇｍのＳｉウェハを得られた。Example 2 An 8-inch Si ingot was cut under the following conditions. That is, the machining fluid was a KOH aqueous solution with a pH of 14, a temperature of 45°C, a vertical load W of 2 g/mm, an abrasive grain of GC #600, and a wire of piano wire with a wire diameter of 0.18 mm and a tension of 1.5.
kg (stress 58.9 kg/mm2), as a result,
Cutting speed 1.5mm/m En, warpage 9.5gm,
A Si wafer with a process-affected layer of 13 gm was obtained.
実施例３
１ｏｉｎのＳｉインゴットを以下の条件で切断した。即
ち加工液はＫＯＨ水溶液でＰＨ１３、温度６０℃、垂直
荷重Ｗは２ｇ／ｍｍ、砥粒はＧＣの＃６００、ワイヤは
線径が０．２０ｍｍφピアン線で張力は２．ｏｋｇ（応
力６３．７ｋｇ／ｍｍ２）である、その結果、切断速度
１．３ｍｍ／ｍｉｎ、反り１４．５ＪＬｍ、加工変質層
１２．５７Ｌｍｃ７）Ｓｉウェハを得られた。Example 3 A 1 oin Si ingot was cut under the following conditions. That is, the machining fluid was a KOH aqueous solution with a pH of 13, a temperature of 60°C, a vertical load W of 2 g/mm, an abrasive grain of #600 made by GC, and a wire with a wire diameter of 0.20 mmφ pian wire with a tension of 2. As a result, a Si wafer with a cutting speed of 1.3 mm/min, a warpage of 14.5 JLm, and a process-affected layer of 12.57 Lmc7) was obtained.
実施例４
５ｉｎのＳｉインゴットを以下の条件で切断した。即ち
加工液はＨＦ＋ＨＮＯ３水溶液でＰＨ５、温度６０℃、
垂直荷重Ｗは１．５ｇ／ｍｍ、砥粒はアルミナの＃１０
００．ワイヤは線径が０．１８ｍｍφのアモルファス線
で張力は１．５ｋｇｃ応力５８ 、９ ｋ ｇ／ｍｍ２
）である、その結果、切断速度１．８ｍｍ／ｍｉｎ、反
り１２．５μｍ、加工変質層５μｍのＳｉウェハを得ら
れた。Example 4 A 5-inch Si ingot was cut under the following conditions. That is, the processing fluid is an HF+HNO3 aqueous solution with a pH of 5 and a temperature of 60°C.
Vertical load W is 1.5 g/mm, abrasive grain is alumina #10
00. The wire is an amorphous wire with a wire diameter of 0.18 mmφ, and the tension is 1.5 kgc stress 58, 9 kg/mm2
), and as a result, a Si wafer was obtained with a cutting speed of 1.8 mm/min, a warpage of 12.5 μm, and a process-affected layer of 5 μm.
実施例５
５ｉｎのＳｉインゴットを以下の条件で切断した。即ち
加工液は水、温度２５℃、垂直荷重Ｗは１．５ｇ／ｍｍ
、砥粒はＢａＣＯ３（７）＃１０００゜ワイヤは線径が
０．１８ｍｍφのピアノ線で張力は１．５ｋｇ（応力５
８．９ｋｇ／ｍｍ２） である、その結果、切断速度１
．８ｍｍ／ｍｉｎ、反り１２．５１Ｌｍ、加工変質層５
ＪＬｍのＳｉウェハを得られた。Example 5 A 5-inch Si ingot was cut under the following conditions. That is, the machining fluid is water, the temperature is 25°C, and the vertical load W is 1.5 g/mm.
, the abrasive grains are BaCO3 (7) #1000°, the wire is a piano wire with a wire diameter of 0.18 mm, and the tension is 1.5 kg (stress 5
8.9kg/mm2), as a result, the cutting speed 1
．． 8mm/min, warpage 12.51Lm, processed damaged layer 5
A JLm Si wafer was obtained.
実施例６
８ｉｎのＳｉインゴットを以下の条件で切断した。即ち
加工液は、ＫＯＨ水溶液でＰＨ１３、温度５０℃、垂直
荷重は２ｇ／ｍｍ、砥粒はＧＣの＃６００、ワイヤは線
径が０．２ｍｍφピアノ線で、張力は５ｋｇ（応力１５
９ 、２ ｋｇ／＋ａｍ２）である。その結果、切断速
度１ 、５ ｍｍ／ｗｉｎ、反り５ＪＬｍ、加工変質層
１３ 、ｇｍのＳｉウェハが得られた。Example 6 An 8-inch Si ingot was cut under the following conditions. That is, the machining fluid is a KOH aqueous solution with a pH of 13, the temperature is 50°C, the vertical load is 2 g/mm, the abrasive grain is GC #600, the wire is a piano wire with a wire diameter of 0.2 mm, and the tension is 5 kg (stress 15
9,2 kg/+am2). As a result, a Si wafer was obtained with a cutting speed of 1.5 mm/win, a warpage of 5 JLm, and a process-affected layer of 13 gm.
発明の効果
従来直径８インチのＳｉインゴットは内周刃では反りを
１５ｇｍ以下で切断できなかったが、本発明により、１
０インチインゴットでも反りを１５ｇｍ以下にすること
が可能になった。このためシリコンウェハからデバイス
を作る時の焦点合わせが高精度で可能であり、記憶容量
は現在のＬＭよりはるかに高い６４Ｍ対応が可ス七にな
った・Effects of the Invention Conventionally, it was not possible to cut a Si ingot with a diameter of 8 inches with an inner peripheral blade to keep the warpage to 15 gm or less, but with the present invention,
It has become possible to reduce warpage to 15 gm or less even with a 0-inch ingot. This makes it possible to focus with high precision when making devices from silicon wafers, and the storage capacity can now support 64M, which is much higher than current LMs.
第１図はワイヤソーの機構の説明図、第２図は砥粒を介
してワイヤでアルカリまたは酸で脆くなったＳｉインゴ
ツト面を切断している状態を説明する図、第３図は垂直
荷重を説明するための図、第４図はＳｉウェハの反りを
説明するための図である。
ｌ・・・Ｓｉインゴット、２・・・ワイヤ、３・・・右
捲取すリール、４・・・左捲取すリール、５・・・アイ
ドラリール、６・・・ノズル、７・・・加工液、８・・
・押上方向。
９・・・テーブル、１０・・・砥粒、１１・・・反応生
成物。
１２・・・溝、１３・・・水平分力、１４・・・切断線
巾。
１５・・・押上荷重、１６・・・Ｓｉウェハ、１７・・
・反り、１８・・・加工変質層。Figure 1 is an explanatory diagram of the mechanism of a wire saw, Figure 2 is an illustration of cutting a Si ingot surface that has become brittle due to alkali or acid using a wire through abrasive grains, and Figure 3 is an illustration of a vertical load. FIG. 4 is a diagram for explaining warpage of a Si wafer. l...Si ingot, 2...wire, 3...reel for right winding, 4...reel for left winding, 5...idler reel, 6...nozzle, 7... Processing fluid, 8...
・Push up direction. 9...Table, 10...Abrasive grain, 11...Reaction product. 12... Groove, 13... Horizontal component force, 14... Cutting line width. 15... Push-up load, 16... Si wafer, 17...
- Warpage, 18... Processing altered layer.
Claims (1)
ヤソーで切断する方法において、前記加工液のＰＨをア
ルカリの加工液の場合はＰＨ９以上、酸の加工液の場合
はＰＨ６からＰＨ３、前記加工液の温度を前記アルカリ
の加工液の場合は３０℃から８０℃、前記酸の加工液の
場合は２５℃から６５℃とすることを特徴とするＳｉイ
ンゴットのワイヤソーによる切断法。In a method of cutting a Si ingot with a wire saw using a machining fluid to which abrasive particles have been added, the pH of the machining fluid is set to 9 or higher in the case of an alkaline machining fluid, PH6 to PH3 in the case of an acid machining fluid, and A method for cutting a Si ingot using a wire saw, characterized in that the temperature of the liquid is 30°C to 80°C in the case of the alkaline working liquid, and 25°C to 65°C in the case of the acidic working liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1017596A JPH02262955A (en) | 1988-12-15 | 1989-01-30 | Method of cutting si ingot by wire saw |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31492188 | 1988-12-15 | ||
| JP63-314921 | 1988-12-15 | ||
| JP1017596A JPH02262955A (en) | 1988-12-15 | 1989-01-30 | Method of cutting si ingot by wire saw |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02262955A true JPH02262955A (en) | 1990-10-25 |
Family
ID=18059248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1017596A Pending JPH02262955A (en) | 1988-12-15 | 1989-01-30 | Method of cutting si ingot by wire saw |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02262955A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0824055A1 (en) * | 1996-08-13 | 1998-02-18 | MEMC Electronic Materials, Inc. | Method and apparatus for cutting an ingot |
| JP2000280166A (en) * | 1999-03-18 | 2000-10-10 | Infineon Technol North America Corp | Improved cmp evenness |
| WO2005039824A1 (en) * | 2003-10-27 | 2005-05-06 | Mitsubishi Denki Kabushiki Kaisha | Multi-wire saw |
| WO2008047446A1 (en) | 2006-10-20 | 2008-04-24 | Mitsubishi Electric Corporation | Slurry for silicon ingot cutting and method of cutting silicon ingot therewith |
| EP2065922A1 (en) * | 2006-09-22 | 2009-06-03 | Shin-Etsu Handotai Co., Ltd. | Cutting method |
| US7591712B2 (en) * | 2005-05-11 | 2009-09-22 | Mitsubishi Electric Corporation | Method of producing silicon blocks and silicon wafers |
| DE102010014551A1 (en) * | 2010-03-23 | 2011-09-29 | Schott Solar Ag | Fluid useful e.g. for sawing brittle material block and for producing wafers, photovoltaic cells and electronic components, comprises at least one glycol base, aqueous acid and optionally at least one additive |
| KR101112743B1 (en) * | 2009-02-19 | 2012-02-24 | 강웅식 | Wire Saw For Cutting Ingot |
| JP2012091319A (en) * | 2010-02-23 | 2012-05-17 | Kobelco Kaken:Kk | Method of manufacturing cutting body |
| US20140242342A1 (en) * | 2011-10-03 | 2014-08-28 | Unilin, Bvba | Panel and Method for Manufacturing Panels |
| CN107851566A (en) * | 2015-06-29 | 2018-03-27 | 西尾康明 | Cutting auxiliary device, cutting method, the diced system of silicon materials |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5368493A (en) * | 1976-11-30 | 1978-06-17 | Nippon Telegr & Teleph Corp <Ntt> | Surface polishing method |
| JPS5583561A (en) * | 1978-12-12 | 1980-06-24 | Matsushita Electric Ind Co Ltd | Abrasion method of polycrystal material |
-
1989
- 1989-01-30 JP JP1017596A patent/JPH02262955A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5368493A (en) * | 1976-11-30 | 1978-06-17 | Nippon Telegr & Teleph Corp <Ntt> | Surface polishing method |
| JPS5583561A (en) * | 1978-12-12 | 1980-06-24 | Matsushita Electric Ind Co Ltd | Abrasion method of polycrystal material |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0824055A1 (en) * | 1996-08-13 | 1998-02-18 | MEMC Electronic Materials, Inc. | Method and apparatus for cutting an ingot |
| CN1082865C (en) * | 1996-08-13 | 2002-04-17 | Memc电子材料有限公司 | Method for cutting ingot and apparatus thereof |
| JP2000280166A (en) * | 1999-03-18 | 2000-10-10 | Infineon Technol North America Corp | Improved cmp evenness |
| JP2009142986A (en) * | 2003-10-27 | 2009-07-02 | Mitsubishi Electric Corp | Multi-wire saw |
| US7306508B2 (en) | 2003-10-27 | 2007-12-11 | Mitsubishi Denki Kabushiki Kaisha | Multi-wire saw |
| EP1685927A4 (en) * | 2003-10-27 | 2008-11-26 | Mitsubishi Electric Corp | Multi-wire saw |
| WO2005039824A1 (en) * | 2003-10-27 | 2005-05-06 | Mitsubishi Denki Kabushiki Kaisha | Multi-wire saw |
| US7591712B2 (en) * | 2005-05-11 | 2009-09-22 | Mitsubishi Electric Corporation | Method of producing silicon blocks and silicon wafers |
| EP2065922A1 (en) * | 2006-09-22 | 2009-06-03 | Shin-Etsu Handotai Co., Ltd. | Cutting method |
| EP2065922A4 (en) * | 2006-09-22 | 2013-10-02 | Shinetsu Handotai Kk | Cutting method |
| WO2008047446A1 (en) | 2006-10-20 | 2008-04-24 | Mitsubishi Electric Corporation | Slurry for silicon ingot cutting and method of cutting silicon ingot therewith |
| US8075647B2 (en) | 2006-10-20 | 2011-12-13 | Mitsubishi Electric Corporation | Slurry for slicing silicon ingot and method for slicing silicon ingot using the same |
| KR101112743B1 (en) * | 2009-02-19 | 2012-02-24 | 강웅식 | Wire Saw For Cutting Ingot |
| JP2012091319A (en) * | 2010-02-23 | 2012-05-17 | Kobelco Kaken:Kk | Method of manufacturing cutting body |
| DE102010014551A1 (en) * | 2010-03-23 | 2011-09-29 | Schott Solar Ag | Fluid useful e.g. for sawing brittle material block and for producing wafers, photovoltaic cells and electronic components, comprises at least one glycol base, aqueous acid and optionally at least one additive |
| US20140242342A1 (en) * | 2011-10-03 | 2014-08-28 | Unilin, Bvba | Panel and Method for Manufacturing Panels |
| US9695600B2 (en) * | 2011-10-03 | 2017-07-04 | Unilin Bvba | Panel and method for manufacturing panels |
| CN107851566A (en) * | 2015-06-29 | 2018-03-27 | 西尾康明 | Cutting auxiliary device, cutting method, the diced system of silicon materials |
| JPWO2017002670A1 (en) * | 2015-06-29 | 2018-07-19 | 西尾 康明 | Silicon material cutting auxiliary device, cutting method, cutting system |
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