JPH0225868B2 - - Google Patents
Info
- Publication number
- JPH0225868B2 JPH0225868B2 JP59130077A JP13007784A JPH0225868B2 JP H0225868 B2 JPH0225868 B2 JP H0225868B2 JP 59130077 A JP59130077 A JP 59130077A JP 13007784 A JP13007784 A JP 13007784A JP H0225868 B2 JPH0225868 B2 JP H0225868B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- silicon
- carbon
- powder
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 37
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 33
- 238000005245 sintering Methods 0.000 claims description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000010304 firing Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 150000001722 carbon compounds Chemical class 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 150000001491 aromatic compounds Chemical class 0.000 claims description 2
- 150000001639 boron compounds Chemical class 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- -1 polymethylphenylene Polymers 0.000 claims description 2
- 238000000034 method Methods 0.000 description 24
- 239000000843 powder Substances 0.000 description 19
- 239000007789 gas Substances 0.000 description 12
- 238000000354 decomposition reaction Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000001272 pressureless sintering Methods 0.000 description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007582 slurry-cast process Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Description
産業上の利用分野
本発明は高密度炭化珪素質焼結体の製造法に関
するものである。
従来の技術
炭化珪素は従来より硬度が高く、耐摩耗性にす
ぐれ、熱膨張率が小さく、また分解温度が高く、
耐酸化性が大きく、化学的に安定でかつ一般にか
なりの電気伝導性を有する有用なセラミツクス材
料として知られている。この炭化珪素質の高密度
焼結体は上記の性質に加え強度が高温まで大き
く、耐熱衝撃性にすぐれ、高温構造材料として有
望とされ、ガスタービン用をはじめとして種々の
用途にその応用が試みられている。
炭化珪素質焼結体はホツトプレス焼結、常圧焼
結、反応焼結、再結晶、化学的蒸着などの方法に
よつて作製される。これらの方法のなかで工業的
に最も有利な方法は常圧焼結法と考えられる。常
圧焼結法によればセラミツクス材料の成形に一般
に用いられるプレス法、泥漿鋳込法、押出成形
法、射出成形法などの方法により成形することが
でき、複雑形状品、大寸法品、肉厚品を最も容易
に生産性良く製造することができる。しかもこの
方法による製品には反応焼結、再結晶法による製
品に比べ高性能が期待できる。
発明が解決しようとする問題点
しかし、炭化珪素は共有結合性の強い化合物で
あるため常圧焼結法の場合、ホツトプレス焼結法
の場合も同様であるが単独では焼結が困難であ
り、高密度の焼結体を得るためには何らかの焼結
助剤の添加が必要である。焼結助剤としてはホウ
素あるいはホウ素化合物などが知られている。さ
らにこれらに炭素を添加することもある。
しかし、常圧焼結法の場合このような焼結助剤
を加えても通常の方法により良好な高性能高密度
焼結体を得ることは難しい。特に焼結時に、焼結
助剤を含む炭化珪素質成形体が分解しやすく、こ
のために成形体が充分に緻密化しないことが問題
となる。
この問題は、少さな試料成形体を作る場合もそ
うであるが、複雑形状品、大寸法品、肉厚品を均
質な高密度品としてしかも生産性良く製造しよう
とする時、特に大きな問題となる。
この点に関し、特開昭54−144411には、硼素と
炭素を焼結助剤として含む炭化珪素質成形体を炭
素を含む雰囲気の中で焼成することにより、より
緻密な焼結体を作れることが開示されている。
本発明は炭化珪素質成形体（ただしアルミニウ
ム及び／又はアルミニウム化合物を焼結助剤とし
て含有するものを除く）を常圧焼結する際に成形
体が分解し、緻密化が抑制されるのを防止し、更
に、高密度な焼結体を得るための方法を提供する
ものである。
炭化珪素は炭化珪素質成形体の焼結温度では分
解を開始する。すなわち炭化珪素は大気圧下では
溶融せず、2000℃以上になると昇華し始め、さら
に高温になると炭素と珪素リツチな蒸気に分解す
る。炭化珪素質の高密度焼結体を得るのに必要な
成形体の焼結温度は一般に1900〜2300℃であり、
この高温度域では炭化珪素は昇華、分解をはじ
め、珪素、Si2Cなどの気体を発生する。そこで炭
化珪素質成形体を珪素、Si2Cなどの気体を含む雰
囲気中で焼成すれば成形体の炭化珪素の昇華、分
解を抑えることができる。しかし実際には炭化珪
素の分解は単純ではない。すなわち成形体中に含
まれる焼結助剤あるいは炭化珪素粒子表面のシリ
カ層あるいは他の不純物あるいは雰囲気中に含ま
れる微量酸素などの相互反応が起こる。
問題点を解決するための手段
そこで焼成中における成形体の分解を防止し、
より高密度の焼結体を作るためには成形体の分解
により発生する気体の平衡蒸気圧以上に雰囲気中
のそれらの気体の分圧を保持することが好まし
い。
焼結助剤にアルミナや酸化イツトリウムなどの
酸化物を使用する場合には勿論であるが、そうで
ない場合にも上に記したような理由により炭化珪
素の分解には酸素が関与することが多く、酸素が
存在すると、一酸化珪素（SiO）、一酸化炭素
（CO）などの気体が発生すると考えられる。そこ
でこれらの気体の焼結雰囲気における分圧を高め
ることも成形体の分解を抑えるためには必要とな
る。
以上のような観点から炭化珪素質成形体の分解
防止につき種々検討した結果、本発明に至つたも
ので、本発明は硼素及び／又は硼素化合物と炭素
を焼結助剤として含む炭化珪素質成形体、又は酸
化イツトリウムを焼結助剤として含む炭化珪素質
成形体（ただしアルミニウム及び／又はアルミニ
ウム化合物を焼結助剤として含有するものを除
く）を珪素及び炭素を成分として含む雰囲気のも
とで焼成することを特徴とする高密度炭化珪素質
焼結体の製造法を要旨とするものである。
次に実施の方法について説明する。
珪素及び炭素を成分として含む雰囲気は各種の
方法で作られるが、１つの方法としては焼成炉中
にこれら気体を導入あるいは封入して達せられ
る。珪素を含むガスはSi、SiCl4、SiH4、SiOな
どとして、炭素を含むガスは炭化水素、COなど
として導入することができる。通常、雰囲気は窒
素、アルゴン、ヘリウムなどの不活性ガスにこれ
らの気体を混合して使用される。また別の方法と
して、これら気体を焼結温度において発生するよ
うな粉末、成形体、又は焼結体を炭化珪素質成形
体の周囲に配しておくことも有効な方法である。
かかる粉末、成形体、又は焼結体は、好ましく
は、珪素、珪素化合物のいずれか１つ又は２つ以
上及び炭素、炭素化合物のいずれか１つ又は２つ
以上からなる。
これらの粉末を炭化珪素質成形体の周囲に配す
方法としては該粉末中に成形体を埋設する方法と
該粉末を内面に塗布した炭素製または炭化珪素製
サヤ材中に成形体を載置する方法が考えられる。
該粉末中に埋設する方法は成形体の分解をよく抑
制し好ましい。しかし大寸法、複雑形状の成形体
には不適である。これに対し、該粉末をサヤ材に
塗布する方法は種々の形状の製造に適し、該粉末
中に埋設する場合と同等の高密度焼結体を得るこ
とができる。粉末塗布の方法においては粉末はア
ルコール、アセトンなどの有機溶媒あるいは水と
混合され泥漿とされサヤ材に塗布されてもよい。
またこの時ポリビニルアルコールなどの結合剤
を泥漿に混合することもできる。
上記の粉末埋設の方法においては粉末として炭
化珪素、シリカ、一酸化珪素、炭素等の種々のも
のを使用できるが好ましいのは炭化珪素粉及び炭
素粉からなる粉末である。
粉末塗布の場合には炭化珪素粉、炭素粉の他に
フエノール樹脂、ポリメチルフエニレンなどの残
炭量の多い高分子芳香族化合物を使用することも
可能である。また、粉末あるいは未焼成の成形体
を使用する代わりに焼結体を使用することもでき
る。
実施例
炭化珪素粉末としては市販の純度99％、平均粒
径１ミクロン以下のものを用いた。この炭化珪素
粉末に焼結助剤を第１表に示す配合割合にて配合
し、プラスチツク製ポツトに入れ、プラスチツク
製ボールによりアセトンの存在下で充分混合し
た。次いでこれを乾燥し、機械プレスにより200
Kg／cm2で成形し20×20×40mmの成形体を得た。
（ただしNo.６については2000Kg／cm2の圧力でラバ
ープレス成形して外径50mm、内径40mm、長さ150
mmのパイプ状の成形体を得た。）次にこれを抵抗
加熱炉によりアルゴンガス１気圧下で、かつ第１
表に示す各種の雰囲気条件により2000℃にて１時
間焼成した。
以上の結果、比較例に示した方法による場合に
比べ、本発明の方法のよる場合には高密度の炭化
珪素質焼結体が得られることがわかる。
INDUSTRIAL APPLICATION FIELD The present invention relates to a method for producing a high-density silicon carbide sintered body. Conventional technology Silicon carbide has higher hardness than before, has excellent wear resistance, has a small coefficient of thermal expansion, and has a high decomposition temperature.
It is known as a useful ceramic material that has high oxidation resistance, is chemically stable, and generally has considerable electrical conductivity. In addition to the above-mentioned properties, this high-density sintered body made of silicon carbide has high strength up to high temperatures and excellent thermal shock resistance, making it a promising material for high-temperature structures, and attempts have been made to apply it to a variety of applications including gas turbines. It is being The silicon carbide sintered body is produced by methods such as hot press sintering, pressureless sintering, reaction sintering, recrystallization, and chemical vapor deposition. Among these methods, the industrially most advantageous method is considered to be the pressureless sintering method. The pressureless sintering method can be molded using methods commonly used to mold ceramic materials, such as the press method, slurry casting method, extrusion molding method, and injection molding method. Thick products can be manufactured easily and with high productivity. Furthermore, products produced by this method can be expected to have higher performance than products produced by reaction sintering and recrystallization methods. Problems to be Solved by the Invention However, since silicon carbide is a compound with strong covalent bonds, it is difficult to sinter it alone, which is the same in the case of pressureless sintering and hot press sintering. In order to obtain a high-density sintered body, it is necessary to add some kind of sintering aid. Boron or boron compounds are known as sintering aids. Furthermore, carbon may be added to these. However, in the case of pressureless sintering, even if such a sintering aid is added, it is difficult to obtain a good high-performance, high-density sintered body using normal methods. Particularly during sintering, a silicon carbide molded body containing a sintering aid is easily decomposed, which causes a problem in that the molded body is not sufficiently densified. This problem is true when making small sample molded bodies, but it is a particularly big problem when trying to manufacture products with complex shapes, large dimensions, or thick walls as homogeneous, high-density products with good productivity. becomes. Regarding this point, JP-A-54-144411 discloses that a more dense sintered body can be made by firing a silicon carbide molded body containing boron and carbon as sintering aids in an atmosphere containing carbon. is disclosed. The present invention prevents the decomposition of silicon carbide compacts (excluding those containing aluminum and/or aluminum compounds as sintering aids) from being densified during pressureless sintering. The object of the present invention is to provide a method for preventing this and further obtaining a high-density sintered body. Silicon carbide begins to decompose at the sintering temperature of the silicon carbide compact. In other words, silicon carbide does not melt under atmospheric pressure, begins to sublimate at temperatures above 2000°C, and decomposes into carbon and silicon-rich vapor at even higher temperatures. The sintering temperature of the molded body required to obtain a high-density sintered body of silicon carbide is generally 1900 to 2300°C,
In this high temperature range, silicon carbide sublimates, decomposes, and generates gases such as silicon and Si 2 C. Therefore, by firing the silicon carbide molded body in an atmosphere containing gases such as silicon and Si 2 C, sublimation and decomposition of silicon carbide in the molded body can be suppressed. However, in reality, decomposition of silicon carbide is not simple. That is, an interaction occurs between the sintering aid contained in the compact, the silica layer on the surface of the silicon carbide particles, other impurities, and a trace amount of oxygen contained in the atmosphere. Measures to solve the problem Therefore, we prevent the molded body from decomposing during firing,
In order to produce a sintered body with higher density, it is preferable to maintain the partial pressure of the gases in the atmosphere above the equilibrium vapor pressure of the gases generated by decomposition of the compact. Of course, when oxides such as alumina or yttrium oxide are used as sintering aids, oxygen is often involved in the decomposition of silicon carbide for the reasons mentioned above. When oxygen is present, gases such as silicon monoxide (SiO) and carbon monoxide (CO) are thought to be generated. Therefore, it is necessary to increase the partial pressure of these gases in the sintering atmosphere in order to suppress the decomposition of the compact. As a result of various studies on preventing the decomposition of silicon carbide molded bodies from the above-mentioned viewpoints, the present invention was developed. or a silicon carbide molded body containing yttrium oxide as a sintering aid (excluding those containing aluminum and/or aluminum compounds as a sintering aid) in an atmosphere containing silicon and carbon as components. The gist of the present invention is a method for producing a high-density silicon carbide sintered body, which is characterized by firing. Next, the implementation method will be explained. An atmosphere containing silicon and carbon as components can be created by various methods, but one method is to introduce or enclose these gases into a firing furnace. Gases containing silicon can be introduced as Si, SiCl 4 , SiH 4 , SiO, etc., and gases containing carbon can be introduced as hydrocarbons, CO, etc. Usually, the atmosphere is a mixture of an inert gas such as nitrogen, argon, or helium. Another effective method is to arrange a powder, a compact, or a sintered compact that generates these gases at the sintering temperature around the silicon carbide compact.
Such a powder, molded body, or sintered body preferably consists of one or more of silicon and a silicon compound, and one or more of carbon and a carbon compound. Methods for placing these powders around a silicon carbide molded body include embedding the molded body in the powder, and placing the molded body in a carbon or silicon carbide pod coated with the powder on its inner surface. There are ways to do this.
The method of embedding in the powder is preferable because it effectively suppresses decomposition of the compact. However, it is unsuitable for molded objects of large dimensions and complex shapes. On the other hand, the method of applying the powder to the pod material is suitable for manufacturing various shapes, and it is possible to obtain a high-density sintered body equivalent to that obtained by embedding the powder in the powder. In the powder coating method, the powder may be mixed with an organic solvent such as alcohol, acetone, or water to form a slurry and then applied to the pod material. A binder such as polyvinyl alcohol can also be mixed into the slurry at this time. In the above-described powder embedding method, various powders such as silicon carbide, silica, silicon monoxide, and carbon can be used, but powders made of silicon carbide powder and carbon powder are preferred. In the case of powder coating, in addition to silicon carbide powder and carbon powder, it is also possible to use a high-molecular aromatic compound with a large amount of residual carbon, such as phenolic resin and polymethylphenylene. Furthermore, a sintered body can be used instead of a powder or an unfired molded body. Example A commercially available silicon carbide powder with a purity of 99% and an average particle size of 1 micron or less was used. A sintering aid was added to this silicon carbide powder in the proportions shown in Table 1, placed in a plastic pot, and thoroughly mixed using a plastic ball in the presence of acetone. This is then dried and mechanically pressed to 200
Kg/cm 2 to obtain a 20×20×40 mm compact.
(However, for No. 6, it is rubber press molded at a pressure of 2000 kg/cm 2 and has an outer diameter of 50 mm, an inner diameter of 40 mm, and a length of 150 mm.
A pipe-shaped molded product with a diameter of mm was obtained. ) Next, this was heated in a resistance heating furnace under 1 atm of argon gas and
Firing was performed at 2000°C for 1 hour under various atmospheric conditions shown in the table. The above results show that a silicon carbide sintered body with a higher density can be obtained by the method of the present invention than by the method shown in the comparative example.
【表】【table】
【表】
＊１；比較例
＊２；粉末の重量に対するSiC、 C等の
割合
＊３；焼結体密度は理論密度に対する相
対密度
第１表において
雰囲気条件
なし：成形体を容器なしで炉中に設置
埋設：成形体を、方式の右欄の種類、配合量より
なる粉末中に埋設
塗布：炭素容器内面に、方式の右欄の種類、配合
量よりなる粉末にエチルアルコールを加えた泥
漿を塗布し乾燥後、この中に成形体を載置、塗
布厚みは約0.5mm
焼成炉の加熱に配置された雰囲気成分は高温下
で反応して他の化合物に変化する。反応は複雑な
平衡反応なので詳細は不明であるが以下のような
反応が起きている。
SiC＋2SiO2（SiCの表面が酸化されている）
→3SiO＋CO、
Ｃ＋SiO2→CO＋SiO、SiO＋Ｃ→CO＋Si、
フエノール樹脂→HCHO（ホルマリン）＋HC（
炭化水素）＋H2＋Ｃ、
HCHO→CO＋H2
従つて焼成雰囲気中にはこのような化学成分が
存在していることになる。[Table] *1; Comparative example
*2; Ratio of SiC, C, etc. to the weight of powder
*3: Density of sintered compact is relative density to theoretical density. In Table 1, there is no atmospheric condition: The compact is placed in a furnace without a container and buried: The compact is placed in a powder according to the type and blending amount in the right column of the method. Embedded coating: Apply a slurry made by adding ethyl alcohol to the powder according to the type and amount shown in the right column of the method on the inner surface of the carbon container. After drying, place the molded body in the slurry. The thickness of the coating is approximately 0.5 mm. Baking Atmospheric components placed in the heating furnace react and change into other compounds at high temperatures. Since the reaction is a complex equilibrium reaction, the details are unknown, but the following reaction occurs. SiC + 2SiO 2 (SiC surface is oxidized)
→3SiO+CO, C+SiO 2 →CO+SiO, SiO+C→CO+Si, Phenol resin → HCHO (formalin) + HC (
Hydrocarbon) + H 2 + C, HCHO → CO + H 2 Therefore, such chemical components are present in the firing atmosphere.
Claims (1)
として含む、又は酸化イツトリウムを焼結助剤と
して含む炭化珪素質成形体を、珪素及び炭素を成
分として含む雰囲気のもとで焼成することを特徴
とする高密度炭化珪素質焼結体の製造法。 ２ 雰囲気が前記炭化珪素質焼結体の周囲に配さ
れた珪素、珪素化合物のいずれか１つ又は２つ以
上及び炭素、炭素化合物のいずれか１つ又は２つ
以上から形成される特許請求の範囲第１項の製造
法。 ３ 雰囲気が不活性ガスを含む特許請求の範囲第
１項又は第２項の製造法。 ４ 珪素化合物が炭化珪素、シリカ、一酸化珪素
である特許請求の範囲第２項の製造法。 ５ 炭素化合物がフエノール樹脂、ポリメチルフ
エニレンなどの高分子芳香族化合物である特許請
求の範囲第２項の製造法。[Scope of Claims] 1. A silicon carbide molded body containing boron and/or a boron compound and carbon as a sintering aid, or containing yttrium oxide as a sintering aid, in an atmosphere containing silicon and carbon as a component. A method for producing a high-density silicon carbide sintered body, characterized by firing it with. 2. The atmosphere is formed from any one or more of silicon and silicon compounds and one or more of carbon and carbon compounds arranged around the silicon carbide sintered body. Manufacturing method of scope 1. 3. The manufacturing method according to claim 1 or 2, wherein the atmosphere contains an inert gas. 4. The manufacturing method according to claim 2, wherein the silicon compound is silicon carbide, silica, or silicon monoxide. 5. The manufacturing method according to claim 2, wherein the carbon compound is a polymeric aromatic compound such as a phenol resin or polymethylphenylene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59130077A JPS6036377A (en) | 1984-06-26 | 1984-06-26 | Manufacture of high density silicon carbide sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59130077A JPS6036377A (en) | 1984-06-26 | 1984-06-26 | Manufacture of high density silicon carbide sintered body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6036377A JPS6036377A (en) | 1985-02-25 |
| JPH0225868B2 true JPH0225868B2 (en) | 1990-06-06 |
Family
ID=15025434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59130077A Granted JPS6036377A (en) | 1984-06-26 | 1984-06-26 | Manufacture of high density silicon carbide sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6036377A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5070049A (en) * | 1987-12-16 | 1991-12-03 | Ibiden, Co. Ltd. | Starting composition for the production of silicon carbide and method of producing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54144411A (en) * | 1978-05-01 | 1979-11-10 | Carborundum Co | Alphaasilicon carbide sintered ceramic body having isometric micro structure |
| JPS55167178A (en) * | 1979-06-18 | 1980-12-26 | Toyota Motor Co Ltd | Manufacture of silicon carbide sintered body |
| JPS565377A (en) * | 1979-06-25 | 1981-01-20 | Atomic Energy Authority Uk | Manufacture of fine ceramic product |
-
1984
- 1984-06-26 JP JP59130077A patent/JPS6036377A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54144411A (en) * | 1978-05-01 | 1979-11-10 | Carborundum Co | Alphaasilicon carbide sintered ceramic body having isometric micro structure |
| JPS55167178A (en) * | 1979-06-18 | 1980-12-26 | Toyota Motor Co Ltd | Manufacture of silicon carbide sintered body |
| JPS565377A (en) * | 1979-06-25 | 1981-01-20 | Atomic Energy Authority Uk | Manufacture of fine ceramic product |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6036377A (en) | 1985-02-25 |
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