JPH0225777A - Magneto-sensitive element - Google Patents
Magneto-sensitive elementInfo
- Publication number
- JPH0225777A JPH0225777A JP63175013A JP17501388A JPH0225777A JP H0225777 A JPH0225777 A JP H0225777A JP 63175013 A JP63175013 A JP 63175013A JP 17501388 A JP17501388 A JP 17501388A JP H0225777 A JPH0225777 A JP H0225777A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- insulating film
- magneto
- voltage
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000002887 superconductor Substances 0.000 claims description 12
- 230000005291 magnetic effect Effects 0.000 abstract description 55
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000005292 diamagnetic effect Effects 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は磁気センシング技術に係り、特にしきい値をも
った磁界センサに好適な感磁素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to magnetic sensing technology, and particularly to a magnetic sensing element suitable for a magnetic field sensor with a threshold value.
従来、強磁性体の磁気抵抗効果を用いた感磁素子につい
て、たとえば差動型素子では特許公報昭５３−２５６４
５号に記載のように、その出力は外部磁界が零から有限
になると直線的に増大していた。すなわち、外部磁界が
有限のある範囲までは出力が零になり、ある外部磁界強
度で出力が出るというしきい値を示すものではなかった
。Conventionally, regarding magnetic sensing elements using the magnetoresistive effect of ferromagnetic materials, for example, for differential type elements, Patent Publication No. 53-2564
As described in No. 5, the output increased linearly as the external magnetic field went from zero to a finite value. In other words, the output is zero until the external magnetic field reaches a finite range, and there is no threshold value at which output is produced at a certain external magnetic field strength.
第２図に従来の２端子磁気抵抗素子の電圧−磁界特性を
示す。素子の端子電圧は曲線１で示すように磁界によっ
て負の向きに生ずる。これにバイアス磁界が印加されて
いる場合には、曲線２で示すものとなる。３がバイアス
磁界の大きさである。FIG. 2 shows the voltage-magnetic field characteristics of a conventional two-terminal magnetoresistive element. The terminal voltage of the element is generated in the negative direction by the magnetic field, as shown by curve 1. When a bias magnetic field is applied to this, the result is as shown by curve 2. 3 is the magnitude of the bias magnetic field.
上記従来技術は外部磁界が零からある有限の範囲で出力
が零で、ある有限の値以上になると出力が発生する、電
圧−磁界特性にしきい値を持たせることは配慮されてい
なかった。In the above-mentioned conventional technology, the output is zero within a certain finite range from zero to an external magnetic field, and an output is generated when the external magnetic field exceeds a certain finite value, and no consideration was given to providing a threshold value to the voltage-magnetic field characteristics.
本発明の目的は、磁気抵抗材料からなる上記感磁素子の
電圧−磁界特性にしきい値を与えることにある。An object of the present invention is to provide a threshold value to the voltage-magnetic field characteristics of the magnetically sensitive element made of a magnetoresistive material.
上記目的は磁気抵抗効果を示す材料を完全反磁性体であ
る超電導材料で被覆することによって達成される。また
、しきい値の制御は超電導材料の種類、被覆する厚さ、
磁気抵抗材料の磁気特性、などを変えることにより達成
される。The above object is achieved by coating a material exhibiting a magnetoresistive effect with a superconducting material that is completely diamagnetic. In addition, the threshold value can be controlled by the type of superconducting material, the coating thickness,
This is achieved by changing the magnetic properties of the magnetoresistive material.
磁気抵抗効果を示す材料を超電導材料で被覆することに
より、超電導材料の完全反磁性のため所定の磁界までは
磁気抵抗効果を示す材料には磁界は印加されないため、
感磁素子は電圧−磁界特性にしきい値を有することとな
る。By coating a material that exhibits a magnetoresistive effect with a superconducting material, a magnetic field will not be applied to the material that exhibits a magnetoresistive effect until a predetermined magnetic field is reached due to the complete diamagnetic nature of the superconducting material.
The magnetic sensing element has a threshold voltage-magnetic field characteristic.
以下本発明の実施例を図と共に説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は非磁性基板４上に形成された２端子磁気抵抗素
子を超電導体で被覆した素子の原動部の断面を示す図で
、５が磁気抵抗薄膜、６，７が超電導薄膜、８，９が絶
縁体薄膜である。磁気抵抗素子の駆動部を超電導体で被
覆することにより、第３図で示すような電圧−磁界特性
が得られる。FIG. 1 is a diagram showing a cross section of the driving part of a two-terminal magnetoresistive element formed on a non-magnetic substrate 4 and coated with a superconductor, in which 5 is a magnetoresistive thin film, 6 and 7 are superconducting thin films, 8, 9 is an insulating thin film. By covering the drive portion of the magnetoresistive element with a superconductor, voltage-magnetic field characteristics as shown in FIG. 3 can be obtained.
すなわち、第２図の曲線１に相当する第１図で示した素
子の電圧−磁界特性は第３図の曲線１０で示すごとく磁
界零から磁界Ｈ７までは超電導体の完全反磁性のため素
子電圧が零で磁界Ｈｔを超えると超電状態が破壊して素
子出力が現われる。磁界Ｈ７は上述のしきい値であり、
超電導体薄膜の臨界磁界、厚さ、形状、などによって決
まる値である。素子にバイアス磁界が印加されるように
した素子、あるいは素子の向きで超電導体の臨界磁界が
異なるときは、第３図の曲線１１で示すような電圧−磁
界特性となる。しかし、第１図で示した素子で、電圧・
磁界特性が第３図の１１で示される素子では、しきい値
Ｈｔ以上の向きの逆な磁界をかけても素子出力の符号が
同じであるので、磁界の向きを判別することができない
、したがって、磁界の向きまで電圧−磁界特性より判別
することは不可能である。一方、第３図の曲線１１で示
した素子ではＨｔの違いにより磁界の向きは特定できる
が、しきい値以上の出力が同符号であり、しきい値以上
の出力の符号で入力磁界を識別するのは困難である。That is, the voltage-magnetic field characteristic of the device shown in FIG. 1, which corresponds to curve 1 in FIG. 2, is as shown by curve 10 in FIG. When is zero and exceeds the magnetic field Ht, the superelectric state is destroyed and an element output appears. The magnetic field H7 is the above-mentioned threshold,
This value is determined by the critical magnetic field, thickness, shape, etc. of the superconductor thin film. When the critical magnetic field of a superconductor differs depending on the element to which a bias magnetic field is applied, or the orientation of the element, the voltage-magnetic field characteristics are as shown by curve 11 in FIG. 3. However, with the element shown in Figure 1, the voltage
In the element whose magnetic field characteristics are indicated by 11 in Fig. 3, the sign of the element output remains the same even if a magnetic field of opposite direction is applied which is equal to or greater than the threshold value Ht, so the direction of the magnetic field cannot be determined. , it is impossible to determine the direction of the magnetic field from the voltage-magnetic field characteristics. On the other hand, in the element shown by curve 11 in Figure 3, the direction of the magnetic field can be identified by the difference in Ht, but the outputs above the threshold have the same sign, and the input magnetic field can be identified by the sign of the output above the threshold. It is difficult to do so.
磁気抵抗素子に３端子を設け、差動駆動した場合は、第
４図の曲線１２で示すように、電圧−磁界特性は磁気抵
抗材料の異方性磁界で決まる磁界Ｈｈまで直結的な出力
電圧を発生する。この３端子素子を超電導体で被覆する
と第５図の曲線１３で示すような磁界−電圧特性となる
。すなわち、被覆された超電導体の臨界磁界に達した磁
界１４で磁気抵抗素子に磁号が印加され、抵抗の増大が
起こる。向きの磁界中に置かれた場合も同様に第５図１
５で示すようなしきい値で抵抗の発生が起こる。しきい
値は用いる超電系体に外部から印加される磁界Ｈｅ、磁
気抵抗素子への通電によって生ずる磁界Ｈｒ、強磁性体
からの洩れ磁界Ｈａの和によって決まる。磁気抵抗素子
からの磁界の強さは、素子と超電導体の距離、すなわち
第１図の絶縁体膜８，９の厚さによっても変化する。し
たがって、Ｍ縁体［８，９の厚さを変えれば、しきい値
を変えることができる。第５図で示したしきい値磁界１
４．１５の値Ｈ０は、磁気抵抗素子に流す電流を一方の
向きとした場合、上記Ｈｒが一方の向きに単に印加され
ているので、一方はＨｔ＝Ｉ（ｅ＋Ｈｒ＋Ｈａで示され
、他方はＨｔ＝Ｈｅ−Ｈｒ ＋Ｈｅで示される。したが
って、電圧−磁界特性は非対称となり、超電導体に実効
的にしきい値以上に磁界が印加されれば、印加された外
部磁界の向きは明瞭に判断できる。When a magnetoresistive element is provided with three terminals and driven differentially, the voltage-magnetic field characteristic is an output voltage that is directly connected to the magnetic field Hh determined by the anisotropic magnetic field of the magnetoresistive material, as shown by curve 12 in Figure 4. occurs. When this three-terminal element is coated with a superconductor, a magnetic field-voltage characteristic as shown by curve 13 in FIG. 5 is obtained. That is, the magnetic field 14 that has reached the critical magnetic field of the coated superconductor applies a magnetic signal to the magnetoresistive element, causing an increase in resistance. Similarly, when placed in a magnetic field in the same direction as shown in Figure 5 1.
The generation of resistance occurs at a threshold value as shown at 5. The threshold value is determined by the sum of the magnetic field He externally applied to the superelectric system used, the magnetic field Hr generated by energizing the magnetoresistive element, and the leakage magnetic field Ha from the ferromagnetic material. The strength of the magnetic field from the magnetoresistive element also changes depending on the distance between the element and the superconductor, that is, the thickness of the insulating films 8 and 9 in FIG. Therefore, by changing the thickness of the M edges [8, 9], the threshold value can be changed. Threshold magnetic field 1 shown in Figure 5
The value H0 of 4.15 is determined by the fact that when the current flowing through the magnetoresistive element is set in one direction, the above Hr is simply applied in one direction, so one is expressed as Ht=I(e+Hr+Ha, and the other is expressed as Ht =He-Hr +He Therefore, the voltage-magnetic field characteristics are asymmetrical, and if a magnetic field is effectively applied to the superconductor above the threshold value, the direction of the applied external magnetic field can be clearly determined.
次に第１図に示した感磁素子の製造方法の一例を示す。Next, an example of a method for manufacturing the magnetically sensitive element shown in FIG. 1 will be described.
先ず、ガラス、セラミックス等からなる非磁性基板４上
に超電導体６として
Ｙ Ｂ ａ、 Ｃｕ３０７− ｘをスパッタ法で約３μ
ｍ形成する。次に絶縁膜８としてＳｉＯ□膜をスパッタ
法で１μｍ付着させ、所望とする磁気抵抗効果素子のよ
り大きな形状に微細加工する。絶縁膜８の上に磁気抵抗
材料５としてＮ１−Ｆｅ（パーマロイ）合金を４０ｎｍ
蒸着し、引き続いてＮ１−ＦｅｆｆＪにバイアス磁界を
印加するためのＮｂ層１６を６０ｎｍ蒸着した。これを
絶縁膜８より小さい形状に微細加工し、この上に絶縁膜
９としてＳｉｎ。First, on a non-magnetic substrate 4 made of glass, ceramics, etc., YBa, Cu307-x is sputtered to a thickness of about 3μ as a superconductor 6.
m form. Next, as the insulating film 8, a SiO□ film is deposited to a thickness of 1 μm by sputtering, and finely processed into a larger shape of the desired magnetoresistive element. A 40 nm thick N1-Fe (permalloy) alloy is placed on the insulating film 8 as the magnetoresistive material 5.
Subsequently, a 60 nm Nb layer 16 was deposited to apply a bias magnetic field to N1-FeffJ. This was microfabricated into a shape smaller than the insulating film 8, and then an insulating film 9 was formed using Sin.
を上記と同じ方法で１μｍ形成する。次に絶縁膜９の上
にＹ Ｂ ａ＠ Ｃｕ、 Ｏｔ −ｘをスパッタ法で約
３μｍ形成し、磁気抵抗素子５を超電導体７で被覆する
。is formed to a thickness of 1 μm using the same method as above. Next, YBa@Cu, Ot-x is formed to a thickness of about 3 μm on the insulating film 9 by sputtering, and the magnetoresistive element 5 is covered with the superconductor 7.
爪上のようにして作製した３端子差動型の感磁素子の電
圧−磁界特性の一例を第６図に示した。FIG. 6 shows an example of the voltage-magnetic field characteristics of a three-terminal differential magnetic sensing element fabricated like a nail.
本発明によれば、外部磁界に対して素子の出力がしきい
値を持つ感磁素子が得られるので、磁界の感知はもちろ
んのこと、磁界制御素子、磁界を信号にした集積回路な
どの新しい機能をもつ素子を提供し、関連する新技術を
創出できる。According to the present invention, it is possible to obtain a magnetic sensing element whose output has a threshold value with respect to an external magnetic field, so it can be used not only for sensing magnetic fields but also for new applications such as magnetic field control elements and integrated circuits that use magnetic fields as signals. We can provide functional elements and create related new technologies.
第１図は本発明の一実施例を示す感磁素子の新面図、第
２図は従来の２端子磁気抵抗素子の電圧−磁界特性を示
す図、第３図は本発明の一例を示す２端子素子の電圧−
磁界特性を示す図、第４図は従来の３端子差動型素子の
電圧−磁界特性を示す図、第５図は本発明の３端子差動
型素子の電圧−磁界特性を示す図、第６図は本発明の感
磁素子の実施例を示す特性図である。
４・・・絶縁基板、５・・・磁気抵抗膜、６，７・・・
超電導体膜、８，９・・・絶縁体膜。
第
〕
回FIG. 1 is a new view of a magneto-sensitive element showing an embodiment of the present invention, FIG. 2 is a diagram showing voltage-magnetic field characteristics of a conventional two-terminal magnetoresistive element, and FIG. 3 is an example of the present invention. Voltage of 2-terminal element -
FIG. 4 is a diagram showing the voltage-magnetic field characteristics of a conventional three-terminal differential element; FIG. 5 is a diagram showing the voltage-magnetic field characteristic of the three-terminal differential element of the present invention. FIG. 6 is a characteristic diagram showing an embodiment of the magnetic sensing element of the present invention. 4... Insulating substrate, 5... Magnetoresistive film, 6, 7...
Superconductor film, 8, 9... Insulator film. th time
Claims (1)
料を絶縁膜を介して超電導体で被覆したことを特徴とす
る感磁素子。1. A magneto-sensitive element characterized in that a magnetoresistive material having terminals for conducting current and detecting voltage is coated with a superconductor via an insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63175013A JPH0225777A (en) | 1988-07-15 | 1988-07-15 | Magneto-sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63175013A JPH0225777A (en) | 1988-07-15 | 1988-07-15 | Magneto-sensitive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0225777A true JPH0225777A (en) | 1990-01-29 |
Family
ID=15988690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63175013A Pending JPH0225777A (en) | 1988-07-15 | 1988-07-15 | Magneto-sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0225777A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5341118A (en) * | 1991-02-08 | 1994-08-23 | International Business Machines Corporation | Multilayer magnetic structure wherein the magnitude of the structure magnetoresistance is a function of nonmagnetic layer thickness |
| KR100750383B1 (en) * | 2004-06-23 | 2007-08-20 | 정근수 | Disc opening and closing device of butterfly valve |
-
1988
- 1988-07-15 JP JP63175013A patent/JPH0225777A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5341118A (en) * | 1991-02-08 | 1994-08-23 | International Business Machines Corporation | Multilayer magnetic structure wherein the magnitude of the structure magnetoresistance is a function of nonmagnetic layer thickness |
| KR100750383B1 (en) * | 2004-06-23 | 2007-08-20 | 정근수 | Disc opening and closing device of butterfly valve |
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