JPH02250350A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH02250350A JPH02250350A JP7353689A JP7353689A JPH02250350A JP H02250350 A JPH02250350 A JP H02250350A JP 7353689 A JP7353689 A JP 7353689A JP 7353689 A JP7353689 A JP 7353689A JP H02250350 A JPH02250350 A JP H02250350A
- Authority
- JP
- Japan
- Prior art keywords
- locos
- film
- silicon substrate
- oxide film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000001312 dry etching Methods 0.000 claims abstract description 7
- 150000004767 nitrides Chemical class 0.000 abstract description 18
- 238000002955 isolation Methods 0.000 abstract description 12
- 230000006866 deterioration Effects 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 238000001039 wet etching Methods 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はシリコン基板に素子分離用局所酸化膜〈以下、
ＬＯＣＯＳ酸化膜という）を形成する工程を有づる半導
体装置の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is applied to a silicon substrate with a local oxide film for element isolation (hereinafter referred to as
The present invention relates to a method for manufacturing a semiconductor device that includes a step of forming a LOCOS oxide film.
従来の技術
以下、従来の半導体装置の製造方法について図面を参照
しながら説明する。2. Description of the Related Art Hereinafter, a conventional method for manufacturing a semiconductor device will be described with reference to the drawings.
第２図は従来の半導体装置の製造方法を説明するための
半導体装置の断面図である。第２図において、シリコン
基板１にｍ、ｍ化したＬＯＣＯＳＩｌ化１１２を形成す
る場合、まず、シリコン基板１上の酸化膜３の表面に窒
化Ｉｌ！４を形成し、フォトリングラフイーによりパタ
ーニングして窒化ＷＡ４に開口部を形成し、さらに、こ
の窒化膜４の開口端部に窒化膜サイド、ウオール５を形
成した後、熱酸化によりＬＯＣＯＳ！化朦２を形成する
のが一般的である。これは、フレームＬＯＣＯＳ法と呼
ばれ、ＬＯＣＯＳ酸化膜形成時、横方向への分離領域の
面積が増大するバーズビークを押え、微細化を可能とし
ている。FIG. 2 is a cross-sectional view of a semiconductor device for explaining a conventional semiconductor device manufacturing method. In FIG. 2, when forming a LOCOSIl film 112 of m and m on a silicon substrate 1, first, the surface of the oxide film 3 on the silicon substrate 1 is coated with nitride Il! 4, patterned by photophosphorography to form an opening in the nitride WA 4, and further formed a nitride film side and a wall 5 at the opening end of the nitride film 4, and then thermally oxidized LOCOS! It is common for the formation of a morph 2. This is called the frame LOCOS method, and it suppresses the bird's beak in which the area of the isolation region increases in the lateral direction when forming the LOCOS oxide film, thereby enabling miniaturization.
発明が解決しようとする課題
しかしながら、上記従来のフレームしｏｃｏｓ法では、
フォトリングラフイーの寸法精度以上に微細化したＬＯ
ＣＯＳ酸化膜の形成は困難であり、また、半導体デバイ
スの高集積化にともない、Ｌａｃｏｓ＠ｏｃｏｓ法を微
細化することによって素子分離耐圧劣化が低電圧でも起
りやすくなるという問題を有していた。Problems to be Solved by the Invention However, the conventional frame ocos method described above has the following problems:
LO has been miniaturized with dimensional accuracy higher than that of Photolin Graphie.
It is difficult to form a COS oxide film, and as semiconductor devices become more highly integrated, miniaturization of the Lacos@ocos method causes a problem in that element isolation withstand voltage deterioration tends to occur even at low voltages.
本発明は、上記従来の問題を解決するもので、ＬＯＣＯ
Ｓ酸化膜を微細化することができ、ＬＯＣＯＳＭ化膜の
微細化にともなう素子分離耐圧劣化も解消することので
きる半導体装置の製造方法を提供することを目的とする
ものである。The present invention solves the above-mentioned conventional problems.
It is an object of the present invention to provide a method for manufacturing a semiconductor device that can miniaturize an S oxide film and eliminate deterioration in element isolation withstand voltage caused by miniaturization of a LOCOSM film.
課題を解決するための手段
上記課題を解決するために本発明の半導体装置の製造方
法は、シリコン基板上に第１のＬＯＣＯＳＲ化喚を形成
した後、前記第１のＬＯＣＯＳ酸化膜の中央部を異方性
ドライエツチングにより前記シリコン基板の表面に達す
るまで除去し、前記除去した部分の前記シリコン基板表
面に第２のＬＯＣＯＳ酸化映酸化酸し、これを素子分離
領域とするものである。Means for Solving the Problems In order to solve the above problems, the method for manufacturing a semiconductor device of the present invention includes forming a first LOCOS oxide film on a silicon substrate, and then removing a central portion of the first LOCOS oxide film. The silicon substrate is removed by anisotropic dry etching until it reaches the surface, and a second LOCOS oxidation layer is applied to the removed portion of the silicon substrate surface to form an element isolation region.
作用
上記方法により、第１のＬＯＣＯＳ！ｌｌ化膜の中央部
を除去した部分のシリコン表面に第２のＬＯＣＯＳ酸化
膜が形成されるので、第２のし０ＣＯ８酸化躾は第１の
ＬＯＣＯＳ！！ｌ化膜よりも内側に形成され、より微細
なＬＯＣＯＳ酸化膜よりなる素子分離領域が得られて半
導体装置の集積度が向上する。また、この第２のＬＯＣ
ＯＳ酸化膜は通常のシリコン基板表面より深い位置に形
成されるので、ＬＯＣＯＳ酸化膜の微細化にともなう素
子分離耐圧劣化が解消され、さらに、上部配線の平坦化
も容易となる。Effect: By the above method, the first LOCOS! A second LOCOS oxide film is formed on the silicon surface where the central part of the ll-oxide film is removed, so the second 0CO8 oxide film is the same as the first LOCOS! ! An element isolation region formed inside the LOCOS oxide film and made of a finer LOCOS oxide film is obtained, and the degree of integration of the semiconductor device is improved. Also, this second LOC
Since the OS oxide film is formed at a deeper position than the surface of a normal silicon substrate, deterioration in element isolation withstand voltage caused by miniaturization of the LOCOS oxide film is eliminated, and furthermore, it becomes easier to planarize the upper wiring.
実施例
以下、本発明の一実施例について図面を参照しながら説
明する。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.
第７図（ａ）〜（ｆ）は本発明の一実施例を示す半導体
装置の＠選方法を説明するための各工程毎の断面図であ
る。第１図（ａ）に示すように、ＰＣｌｏｏ）型シリコ
ン基板１１上にバッファーの酸化Ｗ４１２を５００Ａ形
成し、さらに、その上に第１の窒化膜１３を１５００人
減圧ＣＶＤ法を用いて堆積させ、その後フォトリソグラ
フィーによりバターニングした後、異方性ドライエツチ
ングを用いて第１の窒化１１Ａ１３を部分的に除去して
開口部を形成し、この開口部に、熱酸化により第１のし
ＯＣＯ８Ｍ化１１１４を８０００人形成する。次に、第
１図（ｂ）に示すように、第１の窒化膜１３をマスクと
して、異方性ドライエツチングを用いて第１のＬＯＣＯ
Ｓ酸化１１１４の開口部である中央部をシリコン基板１
１に達するまで除去し、さらに表面に第２の窒化膜１５
を３０００Ａ ｊｆｆ積させる。そして、第１図（Ｃ）
に示すように、異方性ドライエツチングを用いて第２の
窒化膜１５のサイドウオール１５ａを形成し、その後、
チャンネルストッパー１６のボロンを５０ＫｅＶ 、
’ｌ ｘ１０１３、−２注入する。次に、第１図（ｄ）
に示すように、第２のＬＯＣＯＳ酸化ＷＡ酸化金Ａ１７
で８００ＯＡ形成後、第３の窒化膜１８を６０００Ａ程
度堆積させる。FIGS. 7(a) to 7(f) are cross-sectional views of each process for explaining a selection method of a semiconductor device according to an embodiment of the present invention. As shown in FIG. 1(a), 500A of oxidized W412 as a buffer is formed on a PCloo type silicon substrate 11, and a first nitride film 13 is deposited thereon using a 1500-person low-pressure CVD method. Then, after patterning by photolithography, the first nitride 11A13 is partially removed using anisotropic dry etching to form an opening, and the first OCO8M layer is deposited in this opening by thermal oxidation. Form 1114 with 8000 people. Next, as shown in FIG. 1(b), using the first nitride film 13 as a mask, the first LOCO is etched using anisotropic dry etching.
The center part, which is the opening of the S oxide 1114, is placed on the silicon substrate 1.
1, and then a second nitride film 15 is formed on the surface.
is multiplied by 3000A jff. And Figure 1 (C)
As shown in FIG. 2, a sidewall 15a of the second nitride film 15 is formed using anisotropic dry etching, and then,
Channel stopper 16 boron at 50KeV,
'l x1013, -2 injection. Next, Figure 1(d)
As shown in the second LOCOS oxidized WA gold oxide A17
After forming 800 OA, the third nitride film 18 is deposited to a thickness of about 6000 Å.
そして、第１図（ｅ）に示すように、ドライエツチング
により第１のＬＯＣＯＳ酸化ＷＡ１４が表面に現われる
まで第３の窒化！１１８をエッチバックする。Then, as shown in FIG. 1(e), the third nitriding process is performed until the first LOCOS oxidized WA 14 appears on the surface by dry etching. Etch back 118.
その後、ウェットエツチングを用いて酸化膜１２゜１４
を除去した後、同様にウェットエツチングで第２、第３
の窒イヒ膜１５．１８を除去することにより、第１図（
ｆ）に示すように、第２のＬＯＣＯＳ酸化！！！！１７
だけをシリコン基板１１上に残すことができる。After that, wet etching was used to remove the oxide film 12°14
After removing the second and third
By removing the nitride film 15 and 18 of FIG.
As shown in f), the second LOCOS oxidation! ! ! ! 17
Only the wafer can be left on the silicon substrate 11.
したがって、第１のＬＯＣＯＳＩＩＩ化膜１４の内側に
第２のしｏｃｏｓ酸化膜１７が形成されることになり、
シリコン基板１１上に微細なＬＯＣＯＳ酸化膜を形成す
ることができる。また、この第２のＬｏｃｏｓ酸化膜１
７はシリコン基板１１の表面より深い位置に形成される
ので、素子分離耐圧の向上および上部配線の平坦化を容
易にすることができる。Therefore, the second OCOS oxide film 17 is formed inside the first LOCOS III film 14.
A fine LOCOS oxide film can be formed on the silicon substrate 11. Moreover, this second Locos oxide film 1
Since 7 is formed at a position deeper than the surface of the silicon substrate 11, it is possible to improve the element isolation withstand voltage and to easily flatten the upper wiring.
発明の効果
以上のように本発明によれば、第１のＬＯＣＯＳ酸化膜
の中央部を除去した部分のシリコン基板表面に第２のＬ
ＯＣＯＳ酸化膜を形成するため、機幅なＬＯＣＯＳ酸化
膜を通常のシリコン基板表面より深い位置に形成するこ
とができ、集積度の向上、素子分離耐圧の向上および上
部配線の平坦化を容易に実現することができるものであ
る。Effects of the Invention As described above, according to the present invention, a second L is formed on the surface of the silicon substrate in a portion where the center portion of the first LOCOS oxide film is removed.
Since an OCOS oxide film is formed, a flexible LOCOS oxide film can be formed at a deeper position than the surface of a normal silicon substrate, making it easier to improve the degree of integration, improve element isolation withstand voltage, and flatten the upper wiring. It is something that can be done.
第１図（ａ）〜（ｆ）は本発明の一実施例を示す半導体
装置の製造方法を説明するための各工程毎の断面図、第
２図は従来の半導体装置の製造方法を説明するための半
導体装置の断面図である。
１１・・・Ｐ型シリコン基板、１２・・・酸化膜、１３
・・・第１の窒化膜、１４・・・第１のＬＯＣＯＳ１１
！化膜、１５・・・第２の窒化膜、１５ａ・・・サイド
ウオール、１７・・・第２のＬＯＣＯＳ＃！ｉ化膜、１
８・・・第３の窒化膜。
代理人 森 本 義 弘第１図（
ｆの１）FIGS. 1(a) to (f) are cross-sectional views of each process for explaining a method of manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a diagram illustrating a conventional method of manufacturing a semiconductor device. FIG. 11... P-type silicon substrate, 12... Oxide film, 13
...first nitride film, 14...first LOCOS 11
! Nitride film, 15... Second nitride film, 15a... Side wall, 17... Second LOCOS#! i-based film, 1
8...Third nitride film. Agent Yoshihiro Morimoto Figure 1 (
f1)
Claims (1)
た後、前記第１のＬＯＣＯＳ酸化膜の中央部を異方性ド
ライエッチングにより前記シリコン基板の表面に達する
まで除去し、前記除去した部分の前記シリコン基板表面
に第２のＬＯＣＯＳ酸化膜を形成する半導体装置の製造
方法。1. After forming a first LOCOS oxide film on a silicon substrate, the central part of the first LOCOS oxide film is removed by anisotropic dry etching until it reaches the surface of the silicon substrate, and the removed part is removed. A method for manufacturing a semiconductor device, comprising forming a second LOCOS oxide film on the surface of the silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7353689A JPH02250350A (en) | 1989-03-23 | 1989-03-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7353689A JPH02250350A (en) | 1989-03-23 | 1989-03-23 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02250350A true JPH02250350A (en) | 1990-10-08 |
Family
ID=13521051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7353689A Pending JPH02250350A (en) | 1989-03-23 | 1989-03-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02250350A (en) |
-
1989
- 1989-03-23 JP JP7353689A patent/JPH02250350A/en active Pending
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