JPH02248074A - Color solid-state image sensing element - Google Patents
Color solid-state image sensing elementInfo
- Publication number
- JPH02248074A JPH02248074A JP1067503A JP6750389A JPH02248074A JP H02248074 A JPH02248074 A JP H02248074A JP 1067503 A JP1067503 A JP 1067503A JP 6750389 A JP6750389 A JP 6750389A JP H02248074 A JPH02248074 A JP H02248074A
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- JP
- Japan
- Prior art keywords
- patterns
- center
- parts
- photosensitive
- cylindrical lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 2
- CLOMYZFHNHFSIQ-UHFFFAOYSA-N clonixin Chemical compound CC1=C(Cl)C=CC=C1NC1=NC=CC=C1C(O)=O CLOMYZFHNHFSIQ-UHFFFAOYSA-N 0.000 abstract 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Color Television Image Signal Generators (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】 Ｃ発明の目的コ （産業上の利用分野） 本発明は、カラー固体撮像素子に関する。[Detailed description of the invention] CObjective of the invention (Industrial application field) The present invention relates to a color solid-state image sensor.
（従来の技術）
従来のカラー固体撮像素子は、第５図に示す構成となっ
ている。即ち、図中の１はカラー固体撮像素子であり、
この撮像素子Ｉは第１導電型（例えばｐ型）の半導体基
板２を備えている。この基板２表面には、複数の第２導
電型（ｎ型）の感光部３が形成されている。これら感光
部３間の前記基板２表面上には、絶縁膜４を介して転送
電極５が設けられている。この転送電極５上には、絶縁
膜６を介して遮蔽膜７が設けられている。前記遮蔽膜７
を含む前記基板２上には、カラーフィルタ ８が設けら
れている。このカラーフィルタ ８上には、前記感光部
３に対応して複数の透明な細長凸状パターン９が設けら
れている。これら細長凸状パターン９は全て同一の幅を
有する。前記各細長凸状パターン９を含む前記力ラーフ
ィタ ８上には、透明皮膜１０が被覆されている。なお
、前記細長凸状パターン９及び透明皮膜１０により凸レ
ンズ１１を形成している。このような構成の固体撮像素
子ｌにおいては、カラーフィルタ８上の凸レンズ１１に
より光を集光できる。このため、光が入る面積は感光部
３の面積より広がり、感光部３の受ける光量が増加し、
撮像素子ｌの感度を向上で、きる。(Prior Art) A conventional color solid-state image sensor has a configuration shown in FIG. That is, 1 in the figure is a color solid-state image sensor,
The image sensor I includes a semiconductor substrate 2 of a first conductivity type (for example, p-type). A plurality of second conductivity type (n type) photosensitive parts 3 are formed on the surface of this substrate 2. A transfer electrode 5 is provided on the surface of the substrate 2 between these photosensitive parts 3 with an insulating film 4 interposed therebetween. A shielding film 7 is provided on the transfer electrode 5 with an insulating film 6 interposed therebetween. The shielding film 7
A color filter 8 is provided on the substrate 2 including the substrate 2 . On this color filter 8, a plurality of transparent elongated convex patterns 9 are provided corresponding to the photosensitive portions 3. All of these elongated convex patterns 9 have the same width. A transparent film 10 is coated on the filter 8 including each of the elongated convex patterns 9. Note that a convex lens 11 is formed by the elongated convex pattern 9 and the transparent film 10. In the solid-state image sensor l having such a configuration, light can be focused by the convex lens 11 on the color filter 8. Therefore, the area where light enters is wider than the area of the photosensitive section 3, and the amount of light received by the photosensitive section 3 increases.
This can be achieved by improving the sensitivity of the image sensor l.
しかしながら、上記構成の撮像素子にあっては次のよう
な問題があった。即ち、第６図に示すように被写体１２
を撮像レンズ１３を通して前記撮像素子ｌに結像すると
、撮像素子ｌの中央部１ａでは光１４が素子ｌに対して
垂直に入射されるが、端部ｔｂでは光１５が斜めに入射
される。具体的には、第７図に示すように撮像素子１の
中央部では垂直な光１４が入射されるため、基板２の感
光部３での入射光量を大きくできるものの、端部では斜
め方向からの光１５が入射され、るため、基板２の感光
部３での入射光量が少くなる。その結果、撮像素子ｌの
中央部と端部とでは光量の差が生じるため、色ムラがで
きる問題があった。また、高解像化に伴うチップサイズ
の増大化、軽量化のためのレンズの縮小化により斜め方
向から入射される光の傾きが大きくなると、色ムラが一
層顕著となる。However, the image sensor having the above configuration has the following problems. That is, as shown in FIG.
When imaged on the image sensor l through the imaging lens 13, light 14 is incident perpendicularly to the element l at the central portion 1a of the image sensor l, but light 15 is incident obliquely at the end portion tb. Specifically, as shown in FIG. 7, since vertical light 14 is incident on the center of the image sensor 1, the amount of light incident on the photosensitive section 3 of the substrate 2 can be increased, but at the edges, light 14 is incident from an oblique direction. Therefore, the amount of light incident on the photosensitive portion 3 of the substrate 2 decreases. As a result, there is a difference in the amount of light between the central portion and the end portions of the image sensor 1, resulting in the problem of color unevenness. Moreover, when the inclination of light incident from an oblique direction increases due to an increase in chip size due to higher resolution and a reduction in lens size to reduce weight, color unevenness becomes even more noticeable.
（発明が解決しようとする課題）
本発明は、上記従来の課題を解決するためになされたも
ので、中央部と端部の感光部に入射される光量の差を抑
制して、全体的に−様な感度向上を達成したカラー固体
撮像索子を提供し′ようとするものである。(Problems to be Solved by the Invention) The present invention has been made to solve the above-mentioned conventional problems. - It is an object of the present invention to provide a color solid-state imaging device that achieves improved sensitivity.
（課題を解決するための手段）
本発明は、半導体基板表面に行列状に所定ピッチで形成
された複数の感光部と、前記感光部を含む前記基板上に
被覆されたカラーフィルタと、前記感光部とほぼ同幅と
なり、かつ二次元方向の一方と同一ピッチとなり、前記
感光部に対応して互いに平行に設けられた複数の透明な
細長凸状パターンと、これら細長凸状パターンを含む前
記カラーフィルタを被覆し、各々が前記細長凸状パター
ンに対応して円筒レンズ状に形成された透明皮膜とを備
えたカラー固体撮像素子において、前記細長凸状パター
ンは前記透明皮膜とは別に円筒レンズ作用を有し、かつ
前記細長凸状パターンとほぼ同幅になる複数の円筒レン
ズ状パターンに細長方向に沿って重ねられ、この円筒レ
ンズ状パーンは前記細長凸状パターンの中央部以外は前
記中央部側にずらされていることを特徴するカラー画体
撮像素子である。(Means for Solving the Problems) The present invention includes a plurality of photosensitive parts formed in rows and columns at a predetermined pitch on the surface of a semiconductor substrate, a color filter coated on the substrate including the photosensitive parts, and a color filter coated on the substrate including the photosensitive parts. a plurality of transparent elongated convex patterns that are approximately the same width as the part and the same pitch as one of the two-dimensional directions, and are provided parallel to each other corresponding to the photosensitive part; and the color that includes these elongated convex patterns. In a color solid-state image sensing device, the color solid-state imaging device includes a transparent film covering a filter and each formed in the shape of a cylindrical lens corresponding to the elongated convex pattern, wherein the elongated convex pattern has a cylindrical lens function separately from the transparent film. and is superimposed along the elongated direction on a plurality of cylindrical lenticular patterns having approximately the same width as the elongated convex pattern, and the cylindrical lenticular pattern has a width other than the central part of the elongated convex pattern. This is a color image sensor characterized by being shifted to the side.
（作用）
本発明によれば、カラーフィルタ上に設けられる細長凸
状パターンは前記透明皮膜とは別に円筒レンズ作用を有
し、かつ前記細長凸状パターンとほぼ同幅になる複数の
円筒レンズ状パターンに細長方向に沿って重ねられ、こ
の円筒レンズ状パーツは前記細長凸状パターンの中央部
以外は前記中央部側にずらすことによって、半導体基板
表面の中央部と端部に形成された感光部に入射される光
量の差を抑制できる。即ち、円筒レンズ状パターンを前
記半導体基板の中央部以外に設けられる細長凸状パター
ンに対して中央部側にずらし、これらパターンを含む基
板表面に透明皮膜を被覆することによって、カラーフィ
ルタ表面に対して斜めに入射する光を前記透明皮膜及び
円筒レンズ状パターンで垂直方向に屈折して細長凸状パ
ターン下の前記感光部に良好に集光できる。一方、カラ
ーフィルタ表面に対して光が垂直に入射される中央部に
おいては細長凸状パターン下の前記感光部にそのままに
集光できる。従っ丁、半導体基板表面の中央部と端部に
形成された感光部に入射される光量の差を抑制でき、ひ
いては色ムラを生じることなく、全体的に−様な感度向
上を達成したカラー固体撮像素子を得ることができる。(Function) According to the present invention, the elongated convex pattern provided on the color filter has a cylindrical lens function separately from the transparent film, and the elongated convex pattern has a plurality of cylindrical lens shapes having approximately the same width as the elongated convex pattern. This cylindrical lens-shaped part is superimposed on the pattern along the elongated direction, and by shifting the parts other than the central part of the elongated convex pattern toward the central part, a photosensitive part formed at the center and end parts of the surface of the semiconductor substrate is formed. It is possible to suppress the difference in the amount of light incident on the That is, by shifting the cylindrical lens-like pattern toward the center of the semiconductor substrate with respect to the elongated convex pattern provided outside the center of the semiconductor substrate, and coating the substrate surface including these patterns with a transparent film, the color filter surface is The obliquely incident light can be refracted in the vertical direction by the transparent film and the cylindrical lens pattern, and can be well focused on the photosensitive area under the elongated convex pattern. On the other hand, in the central portion where light is perpendicularly incident on the surface of the color filter, the light can be directly focused on the photosensitive area under the elongated convex pattern. A color solid that can suppress the difference in the amount of light incident on the photosensitive areas formed at the center and edges of the surface of the semiconductor substrate, thereby achieving an overall improvement in sensitivity without causing color unevenness. An image sensor can be obtained.
（実施例）
以下、本発明の実施例を第１図（Ａ）〜（Ｄ）に示す製
造方法をを併記して詳細に説明する。(Example) Hereinafter, examples of the present invention will be described in detail together with the manufacturing method shown in FIGS. 1(A) to (D).
まず、第１導電型（例えばｐ型）の半導体基板２１の表
面に複数の第２導電型（ｎ型）の感光部２２を形成する
。つづいて、感光部２２間の前記基板２１表面上に絶縁
膜２３を介して転送電極２４を形成した後、前記転送電
極２４上に絶縁膜２５を介して遮蔽膜２６を形成する。First, a plurality of photosensitive parts 22 of a second conductivity type (n type) are formed on the surface of a semiconductor substrate 21 of a first conductivity type (for example, p type). Subsequently, a transfer electrode 24 is formed on the surface of the substrate 21 between the photosensitive parts 22 with an insulating film 23 interposed therebetween, and then a shielding film 26 is formed on the transfer electrode 24 with an insulating film 25 interposed therebetween.
ひきつつき、前記遮蔽膜２６を含む前記基板２１上にカ
ラーフィルタ２７をした後、前記カラーフィルタ２７上
に写真蝕刻法により例えばアクリル系レジストからなる
複数の透明な細長凸状パターン２８を前記感光部２２に
対応して形成する（第１図（Ａ）図示）。After forming a color filter 27 on the substrate 21 including the shielding film 26, a plurality of transparent elongated convex patterns 28 made of, for example, acrylic resist are formed on the color filter 27 on the photosensitive area by photolithography. 22 (as shown in FIG. 1(A)).
次いで、同図（Ｂ）に示すように前記細長凸状パターン
２８を含むカラーフィルタ２７上に例えばアクリル系レ
ジスト２９を塗布する。つづいて、前記レジスト膜２９
を写真蝕刻法によりバターニングして同図（Ｃ）に示す
ように細長凸状パターン２８が形成された前記カラーフ
ィルタ２７上に複数の透明な円筒レンズ状パターン３０
を形成する。この時、前記各円筒レンズ状パターン３０
のうち前記半導体基板２１の中央部に位置するパターン
３０は前記細長凸状パターン２８と合致するように形成
される。−方、前記半導体基板２１の中央部から左側に
位置する円筒レンズ状パターン３０は中央部側にずらし
て、つまり第２図に示すように前記基板２１の中央部と
反対側の前記第１の細長凸状パターン２８の側縁とδ、
の隙間をあけてずらして該細長凸状パターン２８に形成
される。前記隙間（δＬ）は、前記基板２１の端部側程
、大きくなるように設定されている。Next, as shown in FIG. 2B, an acrylic resist 29, for example, is applied onto the color filter 27 including the elongated convex pattern 28. Subsequently, the resist film 29
A plurality of transparent cylindrical lens-like patterns 30 are formed on the color filter 27 on which an elongated convex pattern 28 is formed by patterning by photolithography as shown in FIG.
form. At this time, each of the cylindrical lens-like patterns 30
The pattern 30 located at the center of the semiconductor substrate 21 is formed to match the elongated convex pattern 28 . - On the other hand, the cylindrical lens-shaped pattern 30 located on the left side of the center of the semiconductor substrate 21 is shifted toward the center, that is, as shown in FIG. The side edge of the elongated convex pattern 28 and δ,
The elongated convex patterns 28 are formed in such a manner that they are shifted with a gap of . The gap (δL) is set to become larger toward the end of the substrate 21.
また、前記半導体基板２１の中央部から右側に位置する
円筒レンズ状パターン３０も基板２１の中央部側にずら
して、つまり第３図に示すように前記基板２１の中央部
と反対側の前記細長凸状パターン２８の側縁とδＲの隙
間をあけてずらして該細長凸状パターン２８に形成され
る。前記隙間（δＲ）は、前記基板２１の端部側程、大
きくなるように設定されている。Further, the cylindrical lens-shaped pattern 30 located on the right side from the center of the semiconductor substrate 21 is also shifted toward the center of the substrate 21, that is, the cylindrical lens-like pattern 30 on the opposite side of the center of the substrate 21 as shown in FIG. The elongated convex pattern 28 is formed by being shifted from the side edge of the convex pattern 28 with a gap of δR. The gap (δR) is set to become larger toward the end of the substrate 21.
次いで、前記力ラーフィタ２７の全面に例えばアクリル
系レジストからなる透明皮膜３１を被覆する。Next, the entire surface of the filter 27 is coated with a transparent film 31 made of, for example, an acrylic resist.
このような透明皮膜３１の被覆により同図（Ｄ）に示す
ように細長凸状パターン２８、円筒レンズ状パターン３
０及び透明皮膜３１からなる凸状レンズ３２が形成され
、これによりカラー固体撮像素３３が製造される。By covering with such a transparent film 31, an elongated convex pattern 28 and a cylindrical lens pattern 3 are formed as shown in FIG.
A convex lens 32 made of 0 and a transparent film 31 is formed, and thereby a color solid-state image sensor 33 is manufactured.
本発明に係わるカラー固体撮像素子３３は、第１図（Ｄ
）に示すように半導体基板２１表面に設けられた感光部
２２と、前記感光部２２を含む前記基板２１上に被覆さ
れたカラーフィルタ２７と前記力ワーフイタ２フ上に光
を前記感光部２２に集光させるための凸状レンズ３２と
を具備した構造になっている。そして、前記凸°状レン
ズ３２は前記カラーフィルタ２７の前記感光部２２に対
応する部分に設けられた複数の透明な細長凸状パターン
２８と、前記基板２１の中央部以外において前記細長凸
状パターン２８に耐して中央部側にずらして設けられる
複数の透明な円筒レンズ状パターン３０と、前記細長凸
状パターン２８及び円筒レンズ状パターン３０を含む前
記基板２１上に被覆される透明皮膜３１とから構成され
ている。The color solid-state image sensor 33 according to the present invention is shown in FIG.
), a photosensitive portion 22 provided on the surface of a semiconductor substrate 21, a color filter 27 coated on the substrate 21 including the photosensitive portion 22, and a color filter 27 that transmits light to the photosensitive portion 22. It has a structure including a convex lens 32 for condensing light. The convex lens 32 includes a plurality of transparent elongated convex patterns 28 provided in a portion of the color filter 27 corresponding to the photosensitive portion 22 and the elongated convex patterns in a portion other than the central portion of the substrate 21. a plurality of transparent cylindrical lenticular patterns 30 that are offset toward the center while resisting 28; and a transparent film 31 that is coated on the substrate 21 that includes the elongated convex patterns 28 and the cylindrical lenticular patterns 30; It consists of
このような構成によれば、前述した第６図図示のように
被写体１２を撮像レンズ１３を通して本実施例の撮像素
子３３に結像すると、第４図に示すように中央部では表
面に対して垂直な光３４が入射され、端部では斜めの光
３５が入射される。この場合、例えば基板２１の中央部
から左側に位置する凸状レンズ３２において円筒レンズ
状パターン３０が細長凸状パターン２８に対して中央部
側にずらして設けられているため、斜め方向からの光３
５を屈折して半導体基板２１表面の感光部２２に良好に
集光できる。中央部に入射された垂直な光３４は、凸状
レンズ３２により半導体基板２１表面の感光部２２に良
好に集光できる。According to such a configuration, when the object 12 is imaged on the image sensor 33 of this embodiment through the imaging lens 13 as shown in FIG. Perpendicular light 34 is incident, and oblique light 35 is incident at the end. In this case, for example, in the convex lens 32 located on the left side from the center of the substrate 21, the cylindrical lens-like pattern 30 is provided shifted toward the center with respect to the elongated convex pattern 28, so that light from an oblique direction 3
5 can be refracted and focused well on the photosensitive portion 22 on the surface of the semiconductor substrate 21. The vertical light 34 incident on the central portion can be well focused on the photosensitive portion 22 on the surface of the semiconductor substrate 21 by the convex lens 32 .
従って、半導体基板２１表面の中央部と端部とに形成さ
れた感光部２２に入射される光の量に差が生じるのを抑
制できるため、色ムラを生じることなく、全体的に−様
な感度向上を達成したカラー固体撮像素子を得ることが
できる。また、高解像化に伴うチップサイズの増大化、
軽量化のためのレンズの縮小化により斜め方向から入射
される光の傾きが大きくなっても、前述した構成とする
ことによって色ムラを生じることなく、全体的に−様な
感度向上を達成したカラー固体撮像素子を得ることがで
きる。Therefore, it is possible to suppress the difference in the amount of light incident on the photosensitive area 22 formed at the center and end portions of the surface of the semiconductor substrate 21, so that color unevenness does not occur and overall - A color solid-state image sensor with improved sensitivity can be obtained. In addition, the chip size increases due to higher resolution,
Even if the inclination of light incident from an oblique direction increases due to the reduction in size of the lens to reduce weight, the above-mentioned configuration does not cause color unevenness and achieves a significant improvement in overall sensitivity. A color solid-state image sensor can be obtained.
［発明の効果］
以上詳述した如く、本発明によれば中央部と端部の感光
部に入射される光量の差を抑制して、色ムラの発生のな
い全体的に−様な感度向上を達成したカラー固体撮像素
子を堤供できる。[Effects of the Invention] As detailed above, according to the present invention, the difference in the amount of light incident on the central and end photosensitive areas is suppressed, and overall sensitivity is improved without color unevenness. We can provide a color solid-state image sensor that achieves this goal.
第１図（Ａ）〜（Ｄ）は本発明の実施例におけるカラー
固体撮像素子の製造工程を示す概略断面図、第２図及び
第３図は前記第１図（Ｃ）の工程において円筒レンズ状
パターンの形成を説明するための概略図、ｍ４図は本実
施例の作用を説明するための概略断面図、第５図は従来
のカラー固体撮像素子を示す概略断面図、第６図は被写
体を撮像レンズを通して固体撮像素子に結像するる状態
を示す説明図、第７図は従来のカラー固体撮像素子の問
題点を説明するための概略断面図である。
２１・・・半導体基板、２２−・・感光部、２４・・・
転送電極、２７・・・カラーフィルタ、２８・・・透明
な細長凸状パターン、３０・・・透明な円筒レンズ状パ
ターン、３１・・・透明皮膜、３２・・・凸状レンズ、
３３・・・カラー固体撮像素子。
出願人代理人 弁理士 鈴江武彦FIGS. 1(A) to (D) are schematic sectional views showing the manufacturing process of a color solid-state image sensor according to an embodiment of the present invention, and FIGS. 2 and 3 show a cylindrical lens in the process of FIG. 1(C). FIG. 5 is a schematic cross-sectional view showing the conventional color solid-state image sensor, and FIG. FIG. 7 is a schematic cross-sectional view for explaining the problems of the conventional color solid-state image sensor. 21... Semiconductor substrate, 22-... Photosensitive section, 24...
Transfer electrode, 27... Color filter, 28... Transparent elongated convex pattern, 30... Transparent cylindrical lens pattern, 31... Transparent film, 32... Convex lens,
33...Color solid-state image sensor. Applicant's agent Patent attorney Takehiko Suzue
Claims (1)
の感光部と、前記感光部を含む前記基板上に被覆された
カラーフィルタと、前記感光部とほぼ同幅となり、かつ
二次元方向の一方と同一ピッチとなり、前記感光部に対
応して互いに平行に設けられた複数の透明な細長凸状パ
ターンと、これら細長凸状パターンを含む前記カラーフ
ィルタを被覆し、各々が前記細長凸状パターンに対応し
て円筒レンズ状に形成された透明皮膜とを備えたカラー
固体撮像素子において、前記細長凸状パターンは前記透
明皮膜とは別に円筒レンズ作用を有し、かつ前記細長凸
状パターンとほぼ同幅になる複数の円筒レンズ状パター
ンに細長方向に沿って重ねられ、この円筒レンズ状パー
ツは前記細長凸状パターンの中央部以外は前記中央部側
にずらされていることを特徴するカラー固体撮像素子。a plurality of photosensitive parts formed in rows and columns at a predetermined pitch on the surface of a semiconductor substrate; a color filter coated on the substrate including the photosensitive parts; and a color filter having approximately the same width as the photosensitive parts and one side in a two-dimensional direction. A plurality of transparent elongated convex patterns having the same pitch and provided in parallel to each other corresponding to the photosensitive area and the color filter including these elongated convex patterns are coated, and each of the transparent elongated convex patterns is covered with Correspondingly, in a color solid-state image sensor equipped with a transparent film formed in the shape of a cylindrical lens, the elongated convex pattern has a cylindrical lens function separately from the transparent film, and is substantially the same as the elongated convex pattern. A color solid-state imaging device characterized in that a plurality of cylindrical lens-shaped patterns having a width are overlapped along the elongated direction, and the cylindrical lens-shaped parts are shifted toward the center part except for the central part of the elongated convex pattern. element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1067503A JPH02248074A (en) | 1989-03-22 | 1989-03-22 | Color solid-state image sensing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1067503A JPH02248074A (en) | 1989-03-22 | 1989-03-22 | Color solid-state image sensing element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02248074A true JPH02248074A (en) | 1990-10-03 |
Family
ID=13346856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1067503A Pending JPH02248074A (en) | 1989-03-22 | 1989-03-22 | Color solid-state image sensing element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02248074A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992009105A1 (en) * | 1990-11-16 | 1992-05-29 | Kabushiki Kaisha Toshiba | Solid-state imaging device and method of manufacturing the same |
| US20100118358A1 (en) * | 2008-11-13 | 2010-05-13 | Canon Kabushiki Kaisha | Image reading apparatus and image forming apparatus |
| US8411317B2 (en) | 2008-10-23 | 2013-04-02 | Canon Kabushiki Kaisha | Image reading apparatus and image forming apparatus capable of adjusting the difference between the spectral characteristics |
| CN105140250A (en) * | 2015-06-30 | 2015-12-09 | 京东方科技集团股份有限公司 | Photoelectric conversion array substrate, manufacture method thereof and photoelectric conversion device |
-
1989
- 1989-03-22 JP JP1067503A patent/JPH02248074A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992009105A1 (en) * | 1990-11-16 | 1992-05-29 | Kabushiki Kaisha Toshiba | Solid-state imaging device and method of manufacturing the same |
| US8411317B2 (en) | 2008-10-23 | 2013-04-02 | Canon Kabushiki Kaisha | Image reading apparatus and image forming apparatus capable of adjusting the difference between the spectral characteristics |
| US20100118358A1 (en) * | 2008-11-13 | 2010-05-13 | Canon Kabushiki Kaisha | Image reading apparatus and image forming apparatus |
| US8503050B2 (en) * | 2008-11-13 | 2013-08-06 | Canon Kabushiki Kaisha | Image reading apparatus and image forming apparatus |
| CN105140250A (en) * | 2015-06-30 | 2015-12-09 | 京东方科技集团股份有限公司 | Photoelectric conversion array substrate, manufacture method thereof and photoelectric conversion device |
| WO2017000430A1 (en) * | 2015-06-30 | 2017-01-05 | 京东方科技集团股份有限公司 | Photoelectric conversion array substrate, manufacturing method therefor and photoelectric conversion device |
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