JPH02247372A - Thin film formation - Google Patents
Thin film formationInfo
- Publication number
- JPH02247372A JPH02247372A JP6691689A JP6691689A JPH02247372A JP H02247372 A JPH02247372 A JP H02247372A JP 6691689 A JP6691689 A JP 6691689A JP 6691689 A JP6691689 A JP 6691689A JP H02247372 A JPH02247372 A JP H02247372A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- base material
- mask
- substrate
- film formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000007740 vapor deposition Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 39
- 239000002245 particle Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 238000007736 thin film deposition technique Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 12
- 238000004544 sputter deposition Methods 0.000 abstract description 9
- 238000003475 lamination Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は薄膜の成膜方法、特に良好な特性の膜の形成
に関するもの、である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a thin film, particularly to forming a film with good characteristics.
［従来の技術］
基体上に成膜領域を制限して薄膜を形成する方法と０℃
、 ［薄膜））ンドブツクＪ Ｐ、２７９〜３０７．
オーム社（昭和５８年）に、領域を制限するためのマス
ク部材を、基体上にほぼ密着させるように設置して、全
面に成膜を行い、成膜終了後マスク部材を取り外す方法
や、基体上に写真製版技術を用いて薄膜のパターンを形
成する方法、さらに全面成膜後、イオンビームなどを用
いて不用部分を除去することにより薄膜パターンを形成
する方法が示されている。これらの技術は、例えば電気
配線をパターニングする場合、電気伝導は薄膜中を電子
が基体と平行に移動することによりなされ、薄膜を面内
方向に利用する場合に適している。[Prior art] Method of forming a thin film by limiting the film formation area on a substrate and 0°C
, [Thin Film)] Book JP, 279-307.
Ohmsha Co., Ltd. (1981) has a method of installing a mask member to limit the area so that it is in close contact with the substrate, forming a film on the entire surface, and removing the mask member after film formation is completed, and A method is shown above in which a thin film pattern is formed using photolithography, and a method in which a thin film pattern is formed by forming a film on the entire surface and then removing unnecessary portions using an ion beam or the like. In these techniques, for example, when patterning electrical wiring, electrical conduction is achieved by electrons moving in the thin film parallel to the substrate, and these techniques are suitable when the thin film is used in the in-plane direction.
一方、薄膜では面内方向と垂直方向く法線方向）とで詫
特性に差が生じることが多く、薄膜における異方性とし
て知られている。代表的な例として、磁性薄膜が挙げら
れ、通常は垂直方向に比べ面内方向の保持力が大きくな
るが、特別な材料と成膜方法を選ぶ二とにより、面内方
向よりも垂直方向の保磁力を太き（することが可能であ
り一１垂直磁気記録媒体として研究が盛んに行われてい
る。On the other hand, in thin films, there is often a difference in compensation characteristics between the in-plane direction and the perpendicular direction (normal direction), which is known as anisotropy in thin films. A typical example is a magnetic thin film, which normally has a greater coercive force in the in-plane direction than in the perpendicular direction, but due to the selection of special materials and film-forming methods, the coercive force in the perpendicular direction is greater than in the in-plane direction. It is possible to increase the coercive force, and research is actively being carried out as a perpendicular magnetic recording medium.
更に、人工格子膜のように、薄膜の垂直方向の積層を人
工的に制御する場合には、面内方向と垂直方向での原子
配列が異なるため、二のような異方性が現れやすい。Furthermore, when the vertical stacking of thin films is artificially controlled, as in the case of superlattice films, the atomic arrangement in the in-plane direction and the vertical direction are different, so anisotropy as shown in 2 is likely to appear.
［発明が解決しようとする課題］
上記のように従来の薄膜成膜方法では、薄膜の垂直方向
での特性を利用しようとした場合、薄膜のパターン形成
方法は幾何学的に不可能で、薄膜を非常に厚く成膜して
、垂直方向の特性を用いる必要があり、基体上に数多く
の素子を並べて集積回路を作ることができないという課
題があった。[Problems to be Solved by the Invention] As described above, in the conventional thin film deposition method, when attempting to utilize the characteristics of the thin film in the vertical direction, it is geometrically impossible to form a thin film pattern. It is necessary to form a very thick film and use vertical characteristics, which poses the problem that it is not possible to create an integrated circuit by arranging a large number of elements on a substrate.
この発明は、上記のような課題を解消するためになされ
たもので、疑似的に薄膜の垂直方向（厚さ方向）の特性
が利用でき、かつ、基体上に集積した素子列〈回路）が
形成できるようにすることを目的とする。This invention was made in order to solve the above-mentioned problems, and it is possible to utilize the characteristics of a thin film in the vertical direction (thickness direction) in a pseudo manner, and also to make it possible to utilize the characteristics of an element array (circuit) integrated on a substrate. The purpose is to enable the formation of
［課題を解決するための手段］
この発明に係わる薄膜成膜方法は、蒸着粒子の基体への
付着を制限するマスクを、基体の表面近傍に配設し、成
膜中に上記マスクを基体面に平行に移動させるようにし
たものである。[Means for Solving the Problems] A method for forming a thin film according to the present invention includes disposing a mask near the surface of the substrate to restrict the adhesion of vapor-deposited particles to the substrate, and disposing the mask on the substrate surface during film formation. It is designed to move parallel to .
［作 用］
この発明における薄膜成膜方法は、蒸着粒子の基体への
け着を制限するマスクを、基体の表面近傍に配設し、成
膜中に上記マスクを基体面に平行に移動させるため、８
ＭＩ４の積層が基体と平行に順次ずれてゆき、細長いパ
ターンが形成されるとともに、薄膜の積層方向が基体表
面に対し、疑似的に傾斜することにより、従来の薄膜方
向の異方性を面内方向に、すなわちパターンの長軸方向
に傾けることができる。[Function] The thin film forming method of the present invention includes disposing a mask near the surface of the substrate for restricting deposition of vapor-deposited particles onto the substrate, and moving the mask parallel to the surface of the substrate during film formation. Tame, 8
The stacked layers of MI4 are sequentially shifted in parallel with the substrate, forming an elongated pattern, and the stacking direction of the thin film is pseudo-inclined with respect to the substrate surface, thereby improving the in-plane anisotropy of the conventional thin film direction. direction, i.e. in the longitudinal direction of the pattern.
［実施例］
第１図はこの発明の一実施例を示す模式図であり、図に
おいて（１）は基体、（２）は基体の近傍に配設したマ
スクであり、例えば基体に接触しないように近接し、マ
スク（２〉を基体表面と平行な方向に移動させることが
できる機構を設けている。このような基体とマスクを真
空槽〈４〉の中に配置し、スパッタリングカソード（３
〉を用いてスパッタリング成膜を行う。[Example] Fig. 1 is a schematic diagram showing an example of the present invention. In the figure, (1) is a base, and (2) is a mask disposed near the base, for example, to prevent contact with the base. A mechanism is provided that can move the mask (2) in a direction parallel to the substrate surface.Such a substrate and mask are placed in a vacuum chamber (4), and the sputtering cathode (3) is placed close to the substrate surface.
> Perform sputtering film formation.
スパッタリング成膜の手順として、まず、基体とマスク
をセットし、真空排気を行い所定の真空度にしたのち、
スパッタガス導入孔（図示せず）から、例えばアルゴン
ガスなどのスパッタガスを真空槽内へ所定量導き、スパ
ッタリングカソードに電圧をかけることにより真空槽内
で放電を起こさせ成膜を開始する。成膜中にマスクを基
体表面と平行に移動させる。マスクの移動速度は成膜の
堆積速度や、必要とするスパッタ膿の特性により適宜決
定すればよい。第２図にこの実施例による成膜の断面模
式図を示す。図において＜１）は基体、（５）は基体上
に堆積した薄膜である。図中矢印は、基体に対するマス
クの移動方向を示し、マスクの移動は一定速度であって
もよ（、また、間欠的であってもよい。（５〉の薄膜は
、微小厚さの膜層がマスクの移動にともなって、少しず
つずれて堆積され、疑似的に薄層が傾いた状態になって
いる。The procedure for sputtering film formation is to first set the substrate and mask, evacuate to the desired degree of vacuum, and then
A predetermined amount of sputtering gas, such as argon gas, is introduced into the vacuum chamber through a sputtering gas introduction hole (not shown), and a voltage is applied to the sputtering cathode to cause discharge in the vacuum chamber and start film formation. The mask is moved parallel to the substrate surface during film formation. The moving speed of the mask may be appropriately determined depending on the deposition speed of film formation and the required characteristics of sputtered pus. FIG. 2 shows a schematic cross-sectional view of film formation according to this example. In the figure, <1) is the substrate, and (5) is the thin film deposited on the substrate. The arrow in the figure indicates the direction of movement of the mask relative to the substrate, and the movement of the mask may be at a constant speed (or may be intermittent). As the mask moves, the thin layer is deposited with a slight shift, resulting in a pseudo-slanted thin layer.
このように二の発明の薄膜の成膜方法を用いることによ
って、薄層が傾いて形成され、基体に平行な面内方向で
も薄膜の垂直方向の特性の一部、または全部を用いて、
細長いストライブ状のパターン化が容易であり、配線素
子などの素子化が可能となる。In this way, by using the thin film forming method of the second invention, the thin layer is formed at an angle, and even in the in-plane direction parallel to the substrate, some or all of the properties of the thin film in the vertical direction are used.
It is easy to form an elongated stripe pattern, and it becomes possible to form elements such as wiring elements.
また、第２図では基体として、平坦な基体表面を用いた
例を示したが、基体の表面の少な（とも一部に傾いた面
を設け、その傾斜面から成膜を開始することにより、第
３図のような薄膜形成ができ、第２図の例よりもより改
善された特性の薄膜が得られる。Although FIG. 2 shows an example in which a flat substrate surface is used as the substrate, it is also possible to provide a slightly inclined surface on the surface of the substrate and start film formation from that inclined surface. A thin film as shown in FIG. 3 can be formed, and a thin film with better characteristics than the example shown in FIG. 2 can be obtained.
なお、上記の実施例ではスパッタリング法を用いたが、
真空蒸着法、ＣＶＤ法及びイオンクラスター法でも同様
の効果を奏する。また、基体として金属基板、単結晶基
板、ガラス基板、プラスチック基板及び非結晶基板など
の内、いずれであっても構わないし、マスクの材質につ
いても、いかなる材料を用いても構わないことは言うま
でもない。In addition, although the sputtering method was used in the above example,
Similar effects can also be achieved by vacuum evaporation, CVD, and ion cluster methods. Furthermore, it goes without saying that the base material may be any of metal substrates, single crystal substrates, glass substrates, plastic substrates, amorphous substrates, etc., and that any material may be used for the mask. .
［発明の効果］
以上のようにこの発明によれば、 蒸着粒子の基体への
付着を制限するマスクを、基体の表面近傍に配設し、成
膜中に上記マスクを基体面に平行に移動させるようにし
たので、薄膜の垂直方向の特性を疑似的に面内方向に傾
けることがで、薄膜の垂直方向の特性を実際の素子に利
用できるようになる。[Effects of the Invention] As described above, according to the present invention, a mask that restricts the adhesion of vapor deposition particles to a substrate is disposed near the surface of the substrate, and the mask is moved parallel to the substrate surface during film formation. By tilting the vertical characteristics of the thin film in a pseudo manner in the in-plane direction, the vertical characteristics of the thin film can be utilized in an actual device.
第１図はこの発明の一実施例を示す模式図で、第２図は
この発明により簿られな薄膜の断面模式図、第３図は基
体として一部に傾斜面を有する基体上に成膜した場合の
薄膜の断面模式図である。
図において（１）は基体、〈２）はマスク、（３〉はス
パッタリングカソード、（４〉は真空槽、（５）は堆積
した薄膜である。
なお、図中同一符号は同−又は相当部分を示す。FIG. 1 is a schematic diagram showing an embodiment of the present invention, FIG. 2 is a schematic cross-sectional diagram of a thin film produced by the present invention, and FIG. 3 is a film formed on a substrate having a partially inclined surface. FIG. 3 is a schematic cross-sectional view of a thin film when In the figure, (1) is the substrate, <2) is the mask, (3> is the sputtering cathode, (4> is the vacuum chamber, and (5) is the deposited thin film. In addition, the same reference numerals in the figure indicate the same or corresponding parts. shows.
Claims (1)
において、蒸着粒子の基体への付着を制限するマスクを
、上記基体の表面近傍に配設し、成膜中に上記マスクを
基体面に平行に移動させることを特徴とする薄膜成膜方
法。In a method of depositing vapor deposition particles on a substrate to form a thin film, a mask that restricts the adhesion of vapor deposition particles to the substrate is placed near the surface of the substrate, and the mask is placed on the substrate surface during film formation. A thin film deposition method characterized by moving parallel to .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6691689A JPH02247372A (en) | 1989-03-17 | 1989-03-17 | Thin film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6691689A JPH02247372A (en) | 1989-03-17 | 1989-03-17 | Thin film formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02247372A true JPH02247372A (en) | 1990-10-03 |
Family
ID=13329776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6691689A Pending JPH02247372A (en) | 1989-03-17 | 1989-03-17 | Thin film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02247372A (en) |
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003532794A (en) * | 2000-05-08 | 2003-11-05 | インテマティックス コーポレーション | Combinatorial synthesis of material chips |
| JP2008285690A (en) * | 2006-10-30 | 2008-11-27 | National Institute For Materials Science | Method for making one-dimensional structure array or crossbar structure on substrate |
| JP2009523939A (en) * | 2006-01-17 | 2009-06-25 | シーメンス アクチエンゲゼルシヤフト | Part to be placed in the flow path of a fluid machine and spray method for coating generation |
| CN102127748A (en) * | 2010-01-11 | 2011-07-20 | 三星移动显示器株式会社 | Thin film deposition apparatus |
| US8852687B2 (en) | 2010-12-13 | 2014-10-07 | Samsung Display Co., Ltd. | Organic layer deposition apparatus |
| US8859043B2 (en) | 2011-05-25 | 2014-10-14 | Samsung Display Co., Ltd. | Organic layer deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
| US8859325B2 (en) | 2010-01-14 | 2014-10-14 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
| US8865252B2 (en) | 2010-04-06 | 2014-10-21 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
| US8871542B2 (en) | 2010-10-22 | 2014-10-28 | Samsung Display Co., Ltd. | Method of manufacturing organic light emitting display apparatus, and organic light emitting display apparatus manufactured by using the method |
| US8876975B2 (en) | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
| US8882556B2 (en) | 2010-02-01 | 2014-11-11 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
| US8882922B2 (en) | 2010-11-01 | 2014-11-11 | Samsung Display Co., Ltd. | Organic layer deposition apparatus |
| US8894458B2 (en) | 2010-04-28 | 2014-11-25 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
| US8906731B2 (en) | 2011-05-27 | 2014-12-09 | Samsung Display Co., Ltd. | Patterning slit sheet assembly, organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus, and the organic light-emitting display apparatus |
| US8916237B2 (en) | 2009-05-22 | 2014-12-23 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of depositing thin film |
| US8951610B2 (en) | 2011-07-04 | 2015-02-10 | Samsung Display Co., Ltd. | Organic layer deposition apparatus |
| US8968829B2 (en) | 2009-08-25 | 2015-03-03 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
| US8973525B2 (en) | 2010-03-11 | 2015-03-10 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
| US9121095B2 (en) | 2009-05-22 | 2015-09-01 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
| US9249493B2 (en) | 2011-05-25 | 2016-02-02 | Samsung Display Co., Ltd. | Organic layer deposition apparatus and method of manufacturing organic light-emitting display apparatus by using the same |
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| US9512515B2 (en) | 2011-07-04 | 2016-12-06 | Samsung Display Co., Ltd. | Organic layer deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
| US9534288B2 (en) | 2013-04-18 | 2017-01-03 | Samsung Display Co., Ltd. | Deposition apparatus, method of manufacturing organic light-emitting display apparatus by using same, and organic light-emitting display apparatus manufactured by using deposition apparatus |
| US9748483B2 (en) | 2011-01-12 | 2017-08-29 | Samsung Display Co., Ltd. | Deposition source and organic layer deposition apparatus including the same |
-
1989
- 1989-03-17 JP JP6691689A patent/JPH02247372A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003532794A (en) * | 2000-05-08 | 2003-11-05 | インテマティックス コーポレーション | Combinatorial synthesis of material chips |
| US8277194B2 (en) | 2006-01-17 | 2012-10-02 | Siemens Aktiengesellschaft | Component to be arranged in the flow channel of a turbomachine and spraying method for producing the coating |
| JP2009523939A (en) * | 2006-01-17 | 2009-06-25 | シーメンス アクチエンゲゼルシヤフト | Part to be placed in the flow path of a fluid machine and spray method for coating generation |
| JP2008285690A (en) * | 2006-10-30 | 2008-11-27 | National Institute For Materials Science | Method for making one-dimensional structure array or crossbar structure on substrate |
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| US8916237B2 (en) | 2009-05-22 | 2014-12-23 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of depositing thin film |
| US9873937B2 (en) | 2009-05-22 | 2018-01-23 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
| US8968829B2 (en) | 2009-08-25 | 2015-03-03 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
| US9450140B2 (en) | 2009-08-27 | 2016-09-20 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display apparatus using the same |
| US9224591B2 (en) | 2009-10-19 | 2015-12-29 | Samsung Display Co., Ltd. | Method of depositing a thin film |
| US8876975B2 (en) | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
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| US8973525B2 (en) | 2010-03-11 | 2015-03-10 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
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