JPH02246255A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02246255A JPH02246255A JP1067984A JP6798489A JPH02246255A JP H02246255 A JPH02246255 A JP H02246255A JP 1067984 A JP1067984 A JP 1067984A JP 6798489 A JP6798489 A JP 6798489A JP H02246255 A JPH02246255 A JP H02246255A
- Authority
- JP
- Japan
- Prior art keywords
- cooling
- phase
- cooling medium
- heat
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 111
- 239000002826 coolant Substances 0.000 claims abstract description 197
- 238000001816 cooling Methods 0.000 claims abstract description 140
- 239000012071 phase Substances 0.000 claims abstract description 67
- 239000007788 liquid Substances 0.000 claims abstract description 39
- 239000007790 solid phase Substances 0.000 claims abstract description 36
- 239000007791 liquid phase Substances 0.000 claims abstract description 25
- 239000000126 substance Substances 0.000 claims description 55
- 230000008859 change Effects 0.000 claims description 39
- 239000007787 solid Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 21
- 230000008023 solidification Effects 0.000 claims description 21
- 238000007711 solidification Methods 0.000 claims description 21
- 239000012530 fluid Substances 0.000 claims description 15
- 239000012782 phase change material Substances 0.000 claims description 12
- 230000002209 hydrophobic effect Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 abstract description 25
- 239000003507 refrigerant Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 3
- 241000270295 Serpentes Species 0.000 abstract 1
- 238000007710 freezing Methods 0.000 abstract 1
- 230000008014 freezing Effects 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 239000000839 emulsion Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 10
- 230000032258 transport Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- -1 fatty acid esters Chemical class 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 230000015271 coagulation Effects 0.000 description 5
- 238000005345 coagulation Methods 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 5
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 235000014113 dietary fatty acids Nutrition 0.000 description 4
- 239000000194 fatty acid Substances 0.000 description 4
- 229930195729 fatty acid Natural products 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 238000009834 vaporization Methods 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003995 emulsifying agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000004677 hydrates Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- GZUXJHMPEANEGY-UHFFFAOYSA-N bromomethane Chemical compound BrC GZUXJHMPEANEGY-UHFFFAOYSA-N 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000005338 heat storage Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 2
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 description 2
- RZJRJXONCZWCBN-UHFFFAOYSA-N octadecane Chemical compound CCCCCCCCCCCCCCCCCC RZJRJXONCZWCBN-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- PKQYSCBUFZOAPE-UHFFFAOYSA-N 1,2-dibenzyl-3-methylbenzene Chemical compound C=1C=CC=CC=1CC=1C(C)=CC=CC=1CC1=CC=CC=C1 PKQYSCBUFZOAPE-UHFFFAOYSA-N 0.000 description 1
- PMPBFICDXLLSRM-UHFFFAOYSA-N 1-propan-2-ylnaphthalene Chemical compound C1=CC=C2C(C(C)C)=CC=CC2=C1 PMPBFICDXLLSRM-UHFFFAOYSA-N 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- QHFQAJHNDKBRBO-UHFFFAOYSA-L calcium chloride hexahydrate Chemical compound O.O.O.O.O.O.[Cl-].[Cl-].[Ca+2] QHFQAJHNDKBRBO-UHFFFAOYSA-L 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000001282 iso-butane Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229940102396 methyl bromide Drugs 0.000 description 1
- GOQYKNQRPGWPLP-UHFFFAOYSA-N n-heptadecyl alcohol Natural products CCCCCCCCCCCCCCCCCO GOQYKNQRPGWPLP-UHFFFAOYSA-N 0.000 description 1
- 229940038384 octadecane Drugs 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- RSIJVJUOQBWMIM-UHFFFAOYSA-L sodium sulfate decahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].[O-]S([O-])(=O)=O RSIJVJUOQBWMIM-UHFFFAOYSA-L 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/14—Thermal energy storage
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置及び半導体装置を備えた計算機に係
り、特に小型で大量の熱を発生する半導体集積回路を冷
却する手段を備えた半導体装置及びそのような半導体装
置を備えた計算機に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a semiconductor device and a computer equipped with the semiconductor device, and particularly to a semiconductor device equipped with means for cooling a small semiconductor integrated circuit that generates a large amount of heat. and a computer equipped with such a semiconductor device.
半導体集積回路においては、半導体素子が発生する熱の
ために素子の寿命が著しく短縮され、場合によっては素
子の誤動作、破壊を生ずる。さらに、素子の定格電圧を
決定する要因としても、発生熱量が大きな比率を占めて
いる。そのため、計算機内の集積回路等においては素子
の熱放出が大きな問題であり、熱放出を容易にする基板
の材質。In semiconductor integrated circuits, the life of the semiconductor elements is significantly shortened due to the heat generated by the semiconductor elements, and in some cases, the elements may malfunction or be destroyed. Furthermore, the amount of heat generated occupies a large proportion as a factor in determining the rated voltage of an element. Therefore, heat dissipation from elements is a big problem in integrated circuits in computers, etc., and substrate materials are needed to facilitate heat dissipation.
形状、冷却構造および冷却媒体等の検討が進められてい
る。素子の温度の許容値は、一般に最大３５３に程度で
あり、小容量の計算機では、冷却媒体として空気を用い
た空冷方式が用いられているが、空冷方式では冷却能力
が低く、大容量の計算機では素子の冷却が不充分になる
可能性があると共に、ファンやブロアが用いられるため
、騒音が発生し、好ましくない、従って大容量（大型）
計算機では、例えば電子技術１９８７−９．Ｐ７０〜７
３に記載されているように、冷却媒体として水を用いる
水冷式が主に採用され、その冷却装置の構造等の検討が
行われている。また、特開昭５６−１５０８４１号公報
には、半導体素子だけでなく、他の電気部品を冷却する
、冷却水を用いる冷却体が開示されている。The shape, cooling structure, cooling medium, etc. are being studied. The allowable value for the temperature of the element is generally about 353°C at maximum, and small-capacity computers use an air-cooling method that uses air as a cooling medium, but the air-cooling method has a low cooling capacity and is not suitable for large-capacity computers. In addition, cooling of the element may be insufficient, and since a fan or blower is used, noise is generated, which is undesirable.
For computers, for example, electronic technology 1987-9. P70~7
As described in No. 3, a water-cooled type using water as a cooling medium is mainly used, and the structure of the cooling device is being studied. Further, Japanese Patent Application Laid-Open No. 56-150841 discloses a cooling body that uses cooling water to cool not only semiconductor elements but also other electrical components.
水冷方式においては、水の持つ顕熱が水の温度差として
、半導体素子（チップ）からの熱の除去および除去され
た熱の輸送に利用される。大量の熱を輸送するには、大
量の冷却水を用いるか、冷却水の温度差（熱除去時の昇
温ＩＩＩりを大きくする必要がある。一般に、冷却水の
計算機出口温度と計算機入口温度の差は５に以下であり
、従って。In the water cooling system, the sensible heat of water is used as a temperature difference in water to remove heat from a semiconductor element (chip) and transport the removed heat. To transport a large amount of heat, it is necessary to use a large amount of cooling water or to increase the temperature difference (temperature rise during heat removal) of the cooling water.In general, the computer outlet temperature of the cooling water and the computer inlet temperature must be increased. The difference is less than or equal to 5, therefore.
熱除去輸送能力（以下冷却能力という）は、約２１Ｘ１
０”Ｊ／ｋｇ（比熱４．１８６０５ｘｌＯ’Ｊ ７ｋｇ
−Ｋ Ｘ温度差５Ｋ）以下であ４゜また、近年、冷却能
力増大を目的として１例えば、米国特許３，６８２，２
３７号に見られるように、フレオン等の低沸点媒体を用
いた蒸発潜熱を利用する形式のものも検討されている。The heat removal transport capacity (hereinafter referred to as cooling capacity) is approximately 21X1
0"J/kg (specific heat 4.18605xlO'J 7kg
-K
As seen in No. 37, a type that utilizes the latent heat of vaporization using a low boiling point medium such as Freon is also being considered.
上記従来技術のうち、水冷方式のものでは、液体の顕熱
が利用されているため、冷却能力に限界があり、かつ、
冷却過程で水の温度が変化（上昇）するため、半導体素
子を収納したモジュールが、均一の温度で冷却されにく
いという欠点がある。Among the above conventional technologies, the water-cooled type uses the sensible heat of the liquid, so there is a limit to its cooling capacity, and
Since the temperature of the water changes (increases) during the cooling process, there is a drawback that it is difficult to cool the module housing the semiconductor elements at a uniform temperature.
計算機の大容量化及び高速化に伴い、チップ数の増大及
びチップ当りの発熱許容量の増大が要求され、従来の水
冷方式では、冷却水量の増大が避けられず、また、チッ
プを均一な温度に保持することは期待できない。As the capacity and speed of computers increase, the number of chips and the amount of heat generated per chip are required to increase.With conventional water cooling methods, an increase in the amount of cooling water is unavoidable, and it is difficult to keep the chips at a uniform temperature. cannot be expected to hold.
また、蒸発潜熱利用タイプによれば、冷却能力は向上す
るが、冷却媒体の密閉化が必要であるとともに、冷却過
程の入ロ〜出ロ間で、冷却媒体流路内に、気相、液相の
冷却媒体を供花させるために構造形式が制限される。ま
た、冷却媒体を均一に蒸発させるのが難しく、蒸発効率
向上、均一蒸発（均一冷却）が困難である。In addition, although the cooling capacity improves with the type that utilizes latent heat of vaporization, it is necessary to seal the cooling medium, and between the input and output of the cooling process, there is a gas phase and a liquid in the cooling medium flow path. The structural form is limited in order to accommodate the cooling medium of the phase. Furthermore, it is difficult to uniformly evaporate the cooling medium, making it difficult to improve evaporation efficiency and uniform evaporation (uniform cooling).
本発明の課題は、計算機が発生する熱を、高い能率で、
かつ被冷却部分を均一な温度で冷却するにある。The problem of the present invention is to efficiently reduce the heat generated by computers.
And the part to be cooled is cooled at a uniform temperature.
上記目的の課題は、半導体素子と該半導体素子が発生す
る熱を除去する冷却手段とを備えた半導体装置において
、該冷却手段に、使用温度においてその一部が外部から
凝固熱を奪って固相から液相に相変化するとともに固相
を含んだ状態で流動性のある物質を、冷却媒体として用
いる半導体装置により、達成される
また、半導体素子を冷却する冷却手段に接続して設けら
れ、該冷却手段が半導体素子から除去した熱を外部に放
出する冷却装置において、該冷却装置に、冷却媒体であ
る、相変化する流動体を冷却して少なくともその一部を
凝固させる凝固手段を備えることにより、達成される。The problem with the above objective is that in a semiconductor device equipped with a semiconductor element and a cooling means for removing heat generated by the semiconductor element, a part of the cooling means absorbs solidification heat from the outside at the operating temperature and enters a solid state. This is achieved by a semiconductor device that uses a fluid substance that changes phase from liquid phase to liquid phase and contains a solid phase as a cooling medium. In a cooling device in which the cooling means releases heat removed from a semiconductor element to the outside, the cooling device is provided with a solidification means for cooling a phase-changing fluid, which is a cooling medium, and solidifying at least a part of it. , achieved.
半導体素子を冷却する冷却手段出口に接続されポンプを
介装した戻り管と、該戻り管に接続して設けられ冷却媒
体を収容する容器と、該容器と前記冷却手段の入口とを
接続する送液管と、前記容器内に設けられ冷却媒体であ
る、相変化する流動体を冷却して少なくともその一部を
凝固させる手段と、を備えている冷却装置としてもよい
。A return pipe connected to the outlet of the cooling means for cooling the semiconductor element and having a pump interposed therein; a container connected to the return pipe and containing a cooling medium; and a supply connecting the container and the inlet of the cooling means. The cooling device may include a liquid pipe and a means for cooling a phase-changing fluid, which is a cooling medium, provided in the container and solidifying at least a part of the fluid.
また、半導体素子を冷却する冷却手段出口と冷却装置入
口との間を接続する配管中の冷却媒体の温度を検出する
手段と、冷却媒体を収容する容器中の相変化物質の凝固
量を検出する検出手段と、検出された前記温度及び凝固
量とに基づいて冷却媒体中の相変化物質の凝固量を制御
する手段と。Further, there is a means for detecting the temperature of a cooling medium in a pipe connecting between an outlet of a cooling means for cooling a semiconductor element and an inlet of a cooling device, and a means for detecting the amount of solidification of a phase change substance in a container containing a cooling medium. detection means; and means for controlling the amount of solidification of the phase change material in the cooling medium based on the detected temperature and amount of solidification.
を備えている冷却装置としてもよい。It is also possible to use a cooling device equipped with
また、検出手段が、容器中の冷却媒体の、液面の位置、
密度、粘性、温度、冷却媒体中の固相と液相の比率のい
ずれか一つ以上を検出する手段である請求項３に記載の
冷却装置としてもよい。The detection means may also detect the position of the liquid level of the cooling medium in the container;
The cooling device according to claim 3 may be a means for detecting one or more of density, viscosity, temperature, and the ratio of solid phase to liquid phase in the cooling medium.
入出力部と、該入出力部に接続された記憶部と、該記憶
部に接続された演算部と、該演算部に接続された制御部
と、前記記憶部、演算部、制御部の少なくとも一部に設
けられた半導体装置を冷却する冷却装置と、をそ備えた
計算機において、前記半導体装置が請求項１に記載され
た半導体装置であり、前記冷却装置が請求項２乃至５に
記載された冷却装置のいずれかである計算機左してもよ
い。an input/output section, a storage section connected to the input/output section, a calculation section connected to the storage section, a control section connected to the calculation section, and at least the storage section, the calculation section, and the control section. In a computer comprising a cooling device for cooling a semiconductor device provided in a part thereof, the semiconductor device is the semiconductor device according to claim 1, and the cooling device is the semiconductor device according to claims 2 to 5. The computer may be any cooling device.
また、入出力部と、該入出力部に接続された記憶部と、
該記憶部に接続さ九た演算部と、該演算部に接続された
制御部と、前記記憶部、演算部。Further, an input/output section, a storage section connected to the input/output section,
a calculation section connected to the storage section; a control section connected to the calculation section; the storage section and the calculation section.
制御部の少なくとも二部を冷却する冷却装置と。a cooling device for cooling at least two parts of the control section;
を備えた計算機において、前記記憶部、演算部。A computer comprising: the storage unit and the calculation unit.
制御部の少なくとも一部に請求項１に記載された半導体
装置が装着されていることと、該半導体装置の冷却手段
に接続して冷却媒体を冷却される媒体とし顕然利用液体
を冷却する側の媒体とする熱交換器が設けられているこ
とと、冷却装置は前記熱交換器の顕熱利用液体側に接続
され冷却媒体を介して前記記憶部、演算部、制御部の少
なくとも一部をなす半導体装置を冷却するものであるこ
とと、を特徴とする計算機としてもよい。At least a part of the control unit is equipped with the semiconductor device according to claim 1, and a side that connects to a cooling means of the semiconductor device and uses a cooling medium as a medium to be cooled and cools an overtly used liquid. The cooling device is connected to the sensible heat utilization liquid side of the heat exchanger and cools at least part of the storage section, the calculation section, and the control section via the cooling medium. The computer may be configured to cool a semiconductor device.
冷却装置が、ヒートパイプであることを特徴とする請求
項７に記載の計算機としてもよい。The computer according to claim 7, wherein the cooling device is a heat pipe.
また、使用温度においてその一部が外部から凝固熱を奪
って固相から液相に相変化するとともに固相を含んだ状
態で流動性のある冷却媒体が、固相を含んだ状態で伝熱
面を介して半導体素子に接触させられ、前記面相が該半
導体素子の熱を奪って液相化することによって該半導体
素子が冷却される半導体装置の冷却方法としてもよい。In addition, at the operating temperature, part of the cooling medium absorbs solidification heat from the outside and undergoes a phase change from a solid phase to a liquid phase. It may be a cooling method for a semiconductor device in which the semiconductor element is cooled by being brought into contact with a semiconductor element through a surface, and the semiconductor element is cooled by the surface layer absorbing heat from the semiconductor element and turning into a liquid phase.
また、温度により固相と液相の間で相変化する物質が固
相状態でそれと疎液性の物質に分散された状態の流動体
を冷却媒体とし、該冷却媒体を伝熱面を介して半導体素
子に接触させ、前記固相が該半導体素子の熱を奪って液
相化することによって該半導体素子が冷却される半導体
装置の冷却方法としてもよい。In addition, a cooling medium is a fluid in which a substance that changes phase between solid and liquid phases depending on temperature is dispersed in a solid phase and a lyophobic substance, and the cooling medium is passed through a heat transfer surface. It may also be a method for cooling a semiconductor device, in which the solid phase absorbs heat from the semiconductor element and turns into a liquid phase, thereby cooling the semiconductor element.
また、温度により固相と液相の間で相変化する物質が固
相状態でそれと親液性でかつ使用状態で相変化しない物
質に分散された状態の流動体を冷却媒体とし、該冷却媒
体を伝熱面を介して半導体素子に接触させ、前記固相が
該半導体素子の熱を奪って液相化することによって該半
導体素子が冷却される半導体装置の冷却方法としてもよ
い。In addition, the cooling medium is a fluid in which a substance that changes phase between a solid phase and a liquid phase depending on temperature is dispersed in a solid state and a substance that is lyophilic to the solid phase and does not change phase during use. The semiconductor device cooling method may be such that the semiconductor element is cooled by bringing the solid phase into contact with the semiconductor element via a heat transfer surface, and the solid phase absorbs heat from the semiconductor element and turns into a liquid phase, thereby cooling the semiconductor element.
また、固相を含む冷却媒体を貯える容器が設けられ、半
導体素子を冷却して固相が溶解された冷却媒体中の相変
化物質を所定の時間再凝固させることなく、半導体素子
の冷却を継続する請求項９゜１０または１１に記載の半
導体装置の冷却力法としてもよい。In addition, a container for storing a cooling medium containing a solid phase is provided to continue cooling the semiconductor element for a predetermined period of time without re-solidifying the phase change substance in the cooling medium in which the solid phase is dissolved. The cooling power method for a semiconductor device according to claim 9, 10 or 11 may also be used.
冷却媒体としては、相変化する親水性物質が相変化しな
い疎水性物質に分散されている冷却媒体でも、相変化す
る疎水性物質が相変化しない親水性物質に分散されてい
る冷却媒体でも、相変化する物質が該相変化する物質と
親液性である相変化しない物質に分散されている冷却媒
体でもよい。The cooling medium may be a cooling medium in which a phase-changing hydrophilic substance is dispersed in a non-phase-changing hydrophobic substance, or a cooling medium in which a phase-changing hydrophobic substance is dispersed in a non-phase-changing hydrophilic substance. It may be a cooling medium in which the phase-changing substance is dispersed in a non-phase-changing substance that is lyophilic to the phase-changing substance.
発明者らは、液冷方式の従来技術の欠点の根本原因は、
冷却媒体の温度差による顕熱変化を用いている点にある
ことから、冷却媒体として、熱輸送力（冷却能力）の大
きい潜熱利用が可能な媒体に着目した。従来の顕熱利用
タイプの冷却媒体の冷却能力は、媒体の比熱と冷却過程
での温度上昇幅（温度差）で決定され、能力を上げるに
は、比熱の大きい媒体を選定するか、又は温度差を大き
くするかが、考えられる。しかし、従来用いられている
水の比熱は、約４．２ Ｘ １０” Ｊ ／（ｋｇ−Ｋ
）と、顕熱利用タイプの冷却媒体としてはかなり大きく
（空気は約０．８ Ｘ １０” Ｊ ／ｋｇ−Ｋ）、水
ヨリも飛躍的に比熱が大きく、冷却媒体として適当な液
体は見当らない、また、冷却過程での温度差を大きくす
ることは、冷却過程の入口付近での冷却媒体温度と出口
付近での冷却媒体温度が、大きく変化することであり、
被冷却体を均一な温度で冷却することが困難になる。被
冷却体が均一な温度に冷却されるには、冷却媒体の温度
差ができるだけ小さいことが望ましい（冷却能力は低下
する）。The inventors believe that the root cause of the drawbacks of the prior art liquid cooling system is that
Since this method uses changes in sensible heat caused by temperature differences in the cooling medium, we focused on a medium that has a large heat transport capacity (cooling capacity) and can utilize latent heat. The cooling capacity of conventional cooling media using sensible heat is determined by the specific heat of the medium and the temperature rise width (temperature difference) during the cooling process. One possibility is to increase the difference. However, the specific heat of conventionally used water is approximately 4.2 x 10” J/(kg-K
), which is quite large for a sensible heat utilization type cooling medium (air is approximately 0.8 x 10" J / kg-K), and the specific heat of water is also dramatically large, and no liquid suitable as a cooling medium has been found. In addition, increasing the temperature difference in the cooling process means that the coolant temperature near the inlet and the coolant temperature near the outlet of the cooling process change greatly,
It becomes difficult to cool the object to be cooled at a uniform temperature. In order for the object to be cooled to be cooled to a uniform temperature, it is desirable that the temperature difference in the cooling medium be as small as possible (the cooling capacity will be reduced).
上述のように、顕熱利用タイプの冷却媒体を用いる方法
では、冷却能力の向上と均一冷却とは互いに相反する目
標となり、両者の改善には限界がある。As described above, in the method using a sensible heat utilization type cooling medium, improvement of cooling capacity and uniform cooling are mutually contradictory goals, and there is a limit to the improvement of both.
また、液体を蒸発させ、蒸発潜熱を利用するタイプの冷
却媒体は、冷却の全過程において、均一な冷却を確保す
るには、冷却の全過程で、冷却媒体が液相と気相で併存
する必要があり、冷却媒体の流路の構成が、そのために
大きく制限される。In addition, with a type of cooling medium that evaporates a liquid and uses the latent heat of vaporization, in order to ensure uniform cooling throughout the entire cooling process, the cooling medium must coexist in both liquid and gas phases during the entire cooling process. This greatly limits the configuration of the cooling medium flow path.
さらに、流路の気相側と液相側では熱伝達率が異なるた
め、流路外周を完全に伝熱面として利用するのが困難で
ある。Furthermore, since the heat transfer coefficients are different between the gas phase side and the liquid phase side of the flow path, it is difficult to completely utilize the outer periphery of the flow path as a heat transfer surface.
発明者らは、上記従来技術の欠点を解消するために、凝
固顕然利用タイプの冷却媒体を用いる冷却方法を発明し
た。In order to overcome the drawbacks of the prior art described above, the inventors have invented a cooling method using a cooling medium of the solidification type.
本発明のポイントは、固相から液相への相変化が一定温
度でおこり、かつ、流動性のある冷却媒体を冷却に用い
ることにある。このような性質の冷却媒体は、計算機冷
却過程中に相変化する物質が、同過程中で相変化しない
物質に混合されたものである０両物質の代表的な混合状
態は二つある。The key point of the present invention is that a phase change from a solid phase to a liquid phase occurs at a constant temperature, and that a fluid cooling medium is used for cooling. A cooling medium with such properties is a mixture of a substance that undergoes a phase change during the computer cooling process and a substance that does not undergo a phase change during the same process.There are two representative mixing states of the two substances.
一つは両者が互いに溶解しない物質を用い、相変化する
物質を相変化しない物質中に、微細液滴として分散（乳
化状態：エマルジョン）させ、その液滴を凝固（固体粒
子化）させてスラリー化するエマルジョン型冷却媒体で
ある。他の一つは、両者が溶解し合い、冷却されること
により相変化物質（混合系により他物質の一部も一緒に
）が析出（固体粒子化）スラリー化する溶液型冷却媒体
である。One method uses substances in which the two do not dissolve in each other, and disperses a phase-changing substance in the form of fine droplets (emulsion) in a non-phase-changing substance, and then solidifies the droplets (solid particles) to create a slurry. It is an emulsion-type cooling medium that The other type is a solution-type cooling medium in which the phase change substance (along with a part of other substances in a mixed system) is precipitated (turned into solid particles) into a slurry by dissolving the two and cooling the mixture.
上記冷却媒体が冷却されると、溶液中に相変化する物質
が微細な固体粒子として分散した流動性のあるスラリー
状の冷却媒体が形成される。このスラリー状の冷却媒体
が伝熱面を介して、半導体素子に接触し、該半導体素子
が発生する熱が、スラリー状の冷却媒体に伝達される。When the cooling medium is cooled, a fluid slurry-like cooling medium is formed in which a phase-changeable substance is dispersed as fine solid particles in a solution. This slurry cooling medium contacts the semiconductor element via the heat transfer surface, and heat generated by the semiconductor element is transferred to the slurry cooling medium.
この熱によりスラリー状の冷却媒体の温度が上昇するが
、冷却媒体中の固体粒子の相変化温度（固相から液相へ
の相変化温度）に達すると、冷却媒体の温度はそれ以上
上昇せず、伝達された熱は、相変化物質゛の固体粒子の
融解に費やされる。一般に相変化温度（融解温度）は一
定であり、スラリー状冷却媒体の温度は、その中の固体
粒子が融解してしまうまで、一定に保持されるので、冷
却過程の出口まで、前記固体粒子の融解が完了しない状
態とすることにより、半導体素子は冷却過程の入口から
出口までの間で、均一に冷却される。This heat causes the temperature of the slurry cooling medium to rise, but once the phase change temperature of the solid particles in the cooling medium (the phase change temperature from solid phase to liquid phase) is reached, the temperature of the cooling medium cannot rise any further. First, the transferred heat is spent melting the solid particles of the phase change material. Generally, the phase change temperature (melting temperature) is constant, and the temperature of the slurry cooling medium is maintained constant until the solid particles therein are melted. By not allowing the melting to be completed, the semiconductor element is uniformly cooled from the entrance to the exit of the cooling process.
また、顕熱利用の場合と異なり、相変化物質の凝固潜熱
が利用されるので、一定温度で冷却しながら冷却媒体の
単位流量当りの冷却熱量（熱輸送量）を大きくできる。Furthermore, unlike the case of using sensible heat, the latent heat of solidification of the phase change material is used, so the amount of cooling heat (amount of heat transport) per unit flow rate of the cooling medium can be increased while cooling at a constant temperature.
以下、本発明の第１の実施例である計算機を、第１図お
よび第２図により説明する。計算機本体１１は、記憶部
１１Ａ、演算部１１Ｂ、制御部１１Ｃを備え、該記憶部
１１Ａには、半導体装置２１が装着されている。該半導
体装置２１の冷却手段である冷却媒体流路２１Ａの出口
に、戻り管１９が接続されている。戻り管１９の他端は
収容している冷却媒体を冷却する手段を備えた容器１０
に接続され、該戻り管の途中には、冷却媒体を容器１０
方向に送給する渦巻きポンプ１２が介装されている。前
記容器１０と冷却媒体流路２１八入口とは、送液管１８
により連通され、該送液管１８の途中には、電動弁２６
が介装されている。A computer according to a first embodiment of the present invention will be explained below with reference to FIGS. 1 and 2. The computer main body 11 includes a storage section 11A, a calculation section 11B, and a control section 11C, and a semiconductor device 21 is attached to the storage section 11A. A return pipe 19 is connected to the outlet of the cooling medium flow path 21A, which is a cooling means for the semiconductor device 21. The other end of the return pipe 19 is a container 10 equipped with means for cooling the cooling medium contained therein.
In the middle of the return pipe, there is a container 10 for storing the cooling medium.
A centrifugal pump 12 is interposed for feeding in this direction. The container 10 and the coolant flow path 218 inlet are connected to the liquid sending pipe 18.
An electric valve 26 is connected in the middle of the liquid sending pipe 18.
is interposed.
さらに、前記ポンプ１２の上流側の戻り管１９と弁２６
と計算機本体１１の間の送液管１８を連通する電動弁２
７が設けられている。容器１０との接続部近くの戻り管
１９に、該管内の冷却媒体の温度の検出手段である温度
センサ２５が設けられ。Further, a return pipe 19 and a valve 26 on the upstream side of the pump 12
An electric valve 2 that communicates the liquid feeding pipe 18 between the computer body 11 and the computer body 11.
7 is provided. A temperature sensor 25 is provided in the return pipe 19 near the connection with the container 10, which is a means for detecting the temperature of the cooling medium within the pipe.
また容器１０には、該容器内の冷却媒体の液位を検出す
る手段である液位センサ２４が設けられている。容器１
０には、該容器内の冷却媒体を冷却して、その一部を凝
固させる手段である冷却コイル２２Ａと、該冷却コイル
２２Ａに冷媒を循環させる冷凍機２２が接続されている
。前記液位センサ２４および温度センサ２５の出力線は
制御部２３に接続され、該制御部２３の出力は、前記電
動弁２６．２７および冷凍機２２に接続されている。Further, the container 10 is provided with a liquid level sensor 24 which is means for detecting the liquid level of the cooling medium within the container. container 1
0 is connected to a cooling coil 22A, which is a means for cooling the cooling medium in the container and partially solidifying it, and a refrigerator 22, which circulates the refrigerant through the cooling coil 22A. Output lines of the liquid level sensor 24 and temperature sensor 25 are connected to a control section 23, and the output of the control section 23 is connected to the electric valves 26, 27 and the refrigerator 22.
容器１０．送液管１８．戻り管１９．ポンプ１２、冷却
コイル２２Ａ、冷凍機２２が冷却装置を形成し、容器１
０および該容器１０に内装された冷却コイル２２Ａが凝
固□手段をなしている。Container 10. Liquid feed pipe 18. Return pipe 19. The pump 12, the cooling coil 22A, and the refrigerator 22 form a cooling device, and the container 1
0 and the cooling coil 22A installed in the container 10 constitute a solidifying means.
第２図は第１図の要部を分りやすく表現した図であり、
計算機本体１１の概要構成ならびに付属する入出力部２
０を示している。記憶部１１Ａに装着された半導体装置
２１は、第３図にその断面を示すように、電気回路を備
えた基板２１Ｂに複数の半導体素子（集積回路素子）２
１Ｃが搭載され、該半導体素子が発生する熱を除去する
冷却手段である冷却媒体流路２１Ａを備えている。この
冷却媒体流路２１Ａは、半導体素子２１Ｃに熱伝導部材
２１Ｄを介してその壁面を接しており、該壁面が伝熱面
２１Ｅをなしている。冷却媒体流路２１Ａは伝熱面２１
をなす平板と、この平板と所定の間隔をおいて配置され
たもう一枚の平板の間を蛇行する流路として形成されて
おり、第２図に示されているように、冷却媒体は流路の
下方から流入して、流路の上端から流出する。容器１０
内には、相変化物質と相変化しない物質が混合された冷
却媒体が収容されている。Figure 2 is a diagram that clearly expresses the main parts of Figure 1.
General configuration of computer main body 11 and attached input/output section 2
It shows 0. As shown in the cross section of FIG. 3, the semiconductor device 21 installed in the storage unit 11A has a plurality of semiconductor elements (integrated circuit elements) 2 on a substrate 21B provided with an electric circuit.
1C, and is provided with a cooling medium flow path 21A which is a cooling means for removing heat generated by the semiconductor element. The cooling medium flow path 21A has a wall surface in contact with the semiconductor element 21C via a heat conductive member 21D, and the wall surface forms a heat transfer surface 21E. Coolant flow path 21A is heat transfer surface 21
The cooling medium is formed as a meandering flow path between a flat plate forming a shape and another flat plate placed at a predetermined distance from this flat plate, as shown in Figure 2. It enters from the bottom of the channel and exits from the upper end of the channel. Container 10
A cooling medium containing a mixture of a phase change material and a non-phase change material is housed inside.
容器１０内の冷却媒体は、冷凍機２２で冷却された冷媒
が流れる冷却コイル２２Ａにより冷却媒体中の相変化物
質の凝固温度以下に冷却され、相変化物質である液滴５
が凝固して、微細な固体粒子６となる。該固体粒子６は
、相変化しない物質の液体（溶液という）４中に分散さ
れ、冷却媒体はスラリー状冷却媒体２となって、電動弁
２６゜送液管１８を経て、計算機本体１１中の半導体装
置２１に流入する。スラリー状冷却媒体中の相変化物質
の液滴５の一部は凝固しておらず、液滴５と固体粒子６
が共存している。半導体装置２１に流入したスラリー状
冷却媒体２は、冷却媒体流路２１Ａ中を蛇行しながら下
から上へ流れ、流れながら熱伝導部材２１Ｄ、伝熱面２
１Ｅを介して、半導体素子２１Ｃの発生熱を吸収する。The cooling medium in the container 10 is cooled to below the solidification temperature of the phase change substance in the cooling medium by the cooling coil 22A through which the coolant cooled by the refrigerator 22 flows, and the liquid droplets 5 of the phase change substance are
is solidified to become fine solid particles 6. The solid particles 6 are dispersed in a liquid (referred to as a solution) 4 of a substance that does not change in phase, and the cooling medium becomes a slurry cooling medium 2 that passes through an electric valve 26 and a liquid sending pipe 18 into the computer main body 11. It flows into the semiconductor device 21. Some of the phase change material droplets 5 in the slurry cooling medium have not solidified, and the droplets 5 and solid particles 6
coexist. The slurry cooling medium 2 that has flowed into the semiconductor device 21 flows from bottom to top while meandering in the cooling medium flow path 21A, and as it flows, it passes through the heat transfer member 21D and the heat transfer surface 2.
The heat generated by the semiconductor element 21C is absorbed through 1E.
スラリー状冷却媒体２中では前述のように相変化物質の
液滴と固体粒子が共存しており、この状態では、冷却媒
体２の温度は、相変化物質の凝固温度に維持されている
。冷却媒体２に吸収された前記熱は、溶液４中に分散さ
れた固体粒子６に融解熱を与えて液滴とすることに費や
され、冷却媒体２中に固体粒子６が存在するかぎり、冷
却媒体２の温度は変化しない、固体粒子６の融解によっ
て生じた液滴５は、溶液４中に分散してエマルジョンを
形成するので、冷却媒体流路２１Ａを通過中の冷却媒体
はスラリー状冷却媒体２から次第にエマルジョン状冷却
媒体１に変化する。冷却媒体２中の固体粒子６の量は、
冷却媒体が冷却媒体流路２１Ａを通過しおえた段階でも
、零とならない量に設定されており、したがって、冷却
媒体流路２１Ａの入口と出口の間では、冷却媒体の温度
は変化せず、半導体素子２１Ｇは均一な温度の冷却媒体
で冷却される。As described above, droplets and solid particles of the phase change material coexist in the slurry cooling medium 2, and in this state, the temperature of the cooling medium 2 is maintained at the solidification temperature of the phase change material. The heat absorbed by the cooling medium 2 is used to give heat of fusion to the solid particles 6 dispersed in the solution 4 to form droplets, and as long as the solid particles 6 are present in the cooling medium 2, The temperature of the cooling medium 2 does not change.The droplets 5 generated by melting the solid particles 6 are dispersed in the solution 4 to form an emulsion, so the cooling medium passing through the cooling medium flow path 21A is cooled in the form of a slurry. The medium 2 gradually changes to an emulsion-like cooling medium 1. The amount of solid particles 6 in the cooling medium 2 is
Even when the cooling medium has finished passing through the cooling medium flow path 21A, the amount is set so that it does not become zero, so the temperature of the cooling medium does not change between the inlet and the exit of the cooling medium flow path 21A. The semiconductor element 21G is cooled with a cooling medium having a uniform temperature.
冷却媒体流路２１Ａを通過してエマルジョン状冷却媒体
１となった冷却媒体は、渦巻きポンプ１２に駆動され、
戻り管１９を経て容器１０に送りこまれる。容器１ｏに
流入したエマルジョン状冷却媒体は、再び、冷却コイル
２２Ａで冷却され、スラリー状になる。冷却媒体は、上
述のように、放熱部である容器１０と、吸熱部である計
算機本体１１間を循環し、その間に、溶液４中の相変化
物質のみが、凝固と融解を繰り返えす０以上の操作によ
り、計算機本体１１の半導体装置２１内で発生した大量
の熱は、スラリー状冷却媒体中の固体粒子融解現象を利
用して、゛一定定温温度、高効率に冷却媒体に吸収され
、エマルジョン状冷却媒体１により、放熱部である容器
１０へ高密度で輸送される。輸送された熱は、容器１０
に内装されている冷却コイル２２Ａ内を循環する冷媒に
伝達され、該冷媒は冷凍機２２により冷却され放熱する
。The coolant that has passed through the coolant flow path 21A and has become the emulsion coolant 1 is driven by the centrifugal pump 12,
It is fed into the container 10 via the return pipe 19. The emulsion-like cooling medium that has flowed into the container 1o is cooled again by the cooling coil 22A and becomes a slurry. As mentioned above, the cooling medium circulates between the container 10, which is a heat radiation part, and the computer main body 11, which is a heat absorption part, and during this time, only the phase change substance in the solution 4 can repeatedly solidify and melt. Through the above operations, a large amount of heat generated in the semiconductor device 21 of the computer main body 11 is absorbed into the cooling medium at a constant temperature and with high efficiency by utilizing the solid particle melting phenomenon in the slurry cooling medium. The emulsion coolant 1 transports the coolant at high density to the container 10 which is a heat dissipation section. The transported heat is transferred to the container 10
The heat is transmitted to the refrigerant circulating in the cooling coil 22A installed in the refrigerator, and the refrigerant is cooled by the refrigerator 22 and radiates heat.
エマルジョン状冷却媒体１は、凝固熱の形で熱を冷却コ
イル中の冷媒に効率よく放出し、該冷却媒体１中の液滴
５が凝固して固体粒子６となる。The emulsion-like cooling medium 1 efficiently releases heat in the form of heat of solidification to the refrigerant in the cooling coil, and the droplets 5 in the cooling medium 1 solidify into solid particles 6.
次に本実施例の運転方法について述べる。容器１０内で
の冷却媒体の冷却（放熱）が所要の度合まで行われたか
どうかは、液滴の固体粒子化、すなわち冷却媒体のスラ
リー化の程度により判定される。スラリー化の程度の判
定は、物質が凝固するときの体積変化を利用し、液位セ
ンサ２４により、次の方法で行われる。まず、冷却媒体
が完全スラリー状態と、完全エマルジョン状態のときの
液位が測定され、これをもとに、検出された液位におけ
るスラリー化率が判定される。液位センサ２４の出力は
制御部２３に送られ、制御部２３はスラリー化率が不足
の場合は、冷凍機２２の冷却能力を増加させるか、電動
弁２６．２７の開度を調整して、計算機本体１１へ流入
する冷却媒体の量を低下させる。計算機本体１１へ流入
する冷却媒体量を低下させる方法は同時に計算機冷却性
能を変化させることになるので、微量調整に用いるのが
望ましい、スラリー化率が、所定の値に達したと判定さ
れた場合は、冷凍機２２の負荷の低下もしくは、冷凍機
２２のオン・オフ運転が制御部２３により指示される。Next, the operating method of this embodiment will be described. Whether cooling (heat dissipation) of the cooling medium within the container 10 has been performed to a required degree is determined by the degree of solidification of the droplets, that is, the degree of slurrying of the cooling medium. The degree of slurry formation is determined by the liquid level sensor 24 using the volume change when the substance solidifies in the following manner. First, the liquid level when the cooling medium is in a complete slurry state and a complete emulsion state is measured, and based on this, the slurry conversion rate at the detected liquid level is determined. The output of the liquid level sensor 24 is sent to the control unit 23, and if the slurry conversion rate is insufficient, the control unit 23 increases the cooling capacity of the refrigerator 22 or adjusts the opening degree of the electric valves 26 and 27. , the amount of cooling medium flowing into the computer main body 11 is reduced. Since the method of reducing the amount of cooling medium flowing into the computer main body 11 will also change the computer cooling performance, it is desirable to use this method for fine adjustment.When it is determined that the slurry ratio has reached a predetermined value In this case, the control unit 23 instructs a reduction in the load on the refrigerator 22 or an on/off operation of the refrigerator 22 .
半導体装置２１の冷却状況の検出には、戻り管１９に設
けられた温度センサ２５が用いられる。A temperature sensor 25 provided in the return pipe 19 is used to detect the cooling status of the semiconductor device 21 .
半導体装置２１が一定温度で均一に冷却されるには、冷
却媒体流路２１Ａ内で冷却媒体中の相変化物質の固体粒
子６が完全には融解せず、冷却媒体流路２１Ａ出口にお
いて、固体粒子の融解が継続していることが必要である
。冷却媒体流路２１Ａの途中で、固体粒子が融解してし
まい、冷却媒体のエマルジョン化が完了すると、それ以
後の冷却媒体流路での潜熱利用が不可能になり、冷却媒
体の温度が上昇する顕熱利用となるので、均一冷却がで
きなくなる。In order for the semiconductor device 21 to be uniformly cooled at a constant temperature, the solid particles 6 of the phase change material in the cooling medium are not completely melted in the cooling medium flow path 21A, and the solid particles 6 are not completely melted at the exit of the cooling medium flow path 21A. It is necessary that the particles continue to melt. When the solid particles melt in the middle of the cooling medium flow path 21A and the emulsion of the cooling medium is completed, it becomes impossible to utilize latent heat in the cooling medium flow path thereafter, and the temperature of the cooling medium increases. Since sensible heat is used, uniform cooling cannot be achieved.
戻り管１９内の冷却媒体の温度を検出し、検出された温
度が冷却媒体中の相変化物質の融解温度（相変化温度）
を越えていたら、冷却媒体が完全にエマルジョン化して
顕然利用になっていることを示す、この場合は、温度セ
ンサ２５の出力を受けた制御部２３が電動弁２６の開度
を大きくするとともに、′電動弁２７の開度を小さくし
て、冷却媒体２の流量を増加させ、冷却容量を大きくし
て半導体装置の温度上昇を防止する。The temperature of the cooling medium in the return pipe 19 is detected, and the detected temperature is the melting temperature of the phase change substance in the cooling medium (phase change temperature).
If it exceeds , it indicates that the cooling medium has completely emulsified and is being used explicitly. In this case, the control unit 23 receives the output of the temperature sensor 25, increases the opening degree of the electric valve 26 , 'The opening degree of the electric valve 27 is reduced to increase the flow rate of the cooling medium 2, thereby increasing the cooling capacity and preventing the temperature of the semiconductor device from rising.
スラリー化率の検出には、前記液位センサに代えて、容
器１０内の冷却媒体の密度を検出する密度センサ、ある
いは、スラリーとエマルジョンとでは粘度が変化するこ
とを利用して粘度センサを用いてもよい。To detect the slurry conversion rate, a density sensor that detects the density of the cooling medium in the container 10 or a viscosity sensor that takes advantage of the fact that the viscosity changes between slurry and emulsion is used instead of the liquid level sensor. It's okay.
第４図に示される第２の実施例は、本発明の特徴である
大きい熱輸送力と、複雑な構造に対応できることを利用
したもので、計算機本体１１内でのみ、凝固熱を利用す
る冷却媒体が用いられている。計算機本体１１内の半導
体装置には集積回路素子（チップ）が複雑にかつ高密度
に配列されているため、冷却媒体流路の占めるスペース
の大小が、計算機の高集積化、コンパクト化、計算の高
速化に大きく影響する。本発明である相変化冷却媒体が
計算機本体内で用いられることにより、半導体装置内の
冷却媒体流路が占める容積が低減され、計算機の高集積
化、コンパクト化に効果がある０本実施例では、半導体
装置２１の冷却媒体流路入口に接続して相変化冷却媒体
を一方の熱交換媒体とする熱交換器１３が設けられ、該
熱交換器１３の相変化冷却媒体入口と半導体装置２１の
冷却媒体流路出口とが、ポンプ１２を介装する戻り管１
９により接続されている。熱交換器１３には。The second embodiment shown in FIG. 4 takes advantage of the characteristics of the present invention, such as the large heat transport force and the ability to accommodate complex structures. medium is used. Since integrated circuit elements (chips) are arranged in a complex and dense manner in the semiconductor device inside the computer main body 11, the size of the space occupied by the cooling medium flow path depends on the degree of integration, compactness, and computation speed of the computer. This greatly affects speed. By using the phase change cooling medium of the present invention in the computer body, the volume occupied by the cooling medium flow path in the semiconductor device is reduced, which is effective in increasing the integration and compactness of the computer. , a heat exchanger 13 is provided which is connected to the cooling medium flow path inlet of the semiconductor device 21 and uses a phase change cooling medium as one heat exchange medium, and the phase change cooling medium inlet of the heat exchanger 13 and the semiconductor device 21 are connected to each other. A return pipe 1 with a pump 12 interposed in the cooling medium flow path outlet
9. In the heat exchanger 13.
冷媒として水が循環する冷却コイル２２Ａが内装され、
この水と一方の熱媒体である相変化冷却媒体とが熱交換
を行い、相変化冷却媒体の熱が水に伝達される。水に伝
達された熱は、冷凍機２２により冷却される。半導体装
置２１と熱交換器１３と、その間を接続する配管には相
変化冷却媒体が充填され、その中でポンプ１２に駆動さ
れて循環する。相変化冷却媒体中の固体粒子は、前記第
１の実施例の場合と同様に、半導体装置２１の冷却媒体
流路を通過しつつ半導体素子の熱を奪って融解し；熱交
換器１３内で冷却されて再び凝固する。A cooling coil 22A that circulates water as a refrigerant is installed inside,
This water and the phase change cooling medium, which is one heat medium, exchange heat, and the heat of the phase change cooling medium is transferred to the water. The heat transferred to the water is cooled by the refrigerator 22. A phase change cooling medium is filled in the semiconductor device 21 and the heat exchanger 13 and the pipes connecting them, and is circulated therein by being driven by the pump 12 . As in the case of the first embodiment, the solid particles in the phase change cooling medium absorb heat from the semiconductor element and melt while passing through the cooling medium flow path of the semiconductor device 21; in the heat exchanger 13. It cools and solidifies again.
凝固熱を利用して高密度で冷却、熱輸送が行われるため
、少量の冷却媒体で充分な冷却が行われ、冷却媒体流路
のスペースが小さくてすむ。本実施例によれば、半導体
装置（計算機）の均一な冷却を小さいスペースで行うこ
とができ、計算機本体外の冷却用の設備を水を用いる従
来の設備とすることができる。Since cooling and heat transport are performed at a high density using heat of solidification, sufficient cooling can be achieved with a small amount of cooling medium, and the space for the cooling medium flow path can be small. According to this embodiment, the semiconductor device (computer) can be uniformly cooled in a small space, and the cooling equipment outside the computer main body can be replaced with conventional equipment using water.
第５図に示される第３の実施例では、上記第２の実施例
における冷却コイル２２Ａがヒートパイプ２２Ｂに代え
られ、冷凍機２２に代えて、ヒートパイプ放熱手段２２
Ｃが設けられている０本実施例では、熱交換器１３から
の熱輸送に、ポンプを用いることなく高密度で熱輸送を
行う蒸発潜熱タイプの媒体を封入したヒートパイプ２２
Ｂが用いられているので、前記第２の実施例による効果
に加えて、放熱部への熱輸送のための動力が低減される
効果がある。第４図、第５図では、運転制御系は省略し
であるが、第１図に示されたと同様の制御の考え方が適
用される。In the third embodiment shown in FIG. 5, the cooling coil 22A in the second embodiment is replaced with a heat pipe 22B, and the refrigerator 22 is replaced with a heat pipe heat radiation means
In this embodiment, a heat pipe 22 is used, which is filled with a latent heat of vaporization type medium that transports heat from the heat exchanger 13 at high density without using a pump.
Since B is used, in addition to the effect of the second embodiment, there is an effect that the power for transporting heat to the heat radiating section is reduced. Although the operation control system is omitted in FIGS. 4 and 5, the same control concept as shown in FIG. 1 is applied.
第６図に示される第４の実施例は、冷却媒体を貯える貯
槽９が設けられ、該貯槽９は大量のスラリー状冷却媒体
を貯えて蓄冷熱を行うものである。The fourth embodiment shown in FIG. 6 is provided with a storage tank 9 for storing a cooling medium, and the storage tank 9 stores a large amount of slurry-like cooling medium to store cold heat.
貯槽９の内部は、一連の流路をなす複数の区画に仕切板
２８により区画され、前記一連の流路の下流端をなす区
画と計算機本体１１内の半導体装置２１の冷却手段入口
とが送液管１８で接続されている。また、半導体装！！
２１の冷却手段出口と。The inside of the storage tank 9 is divided into a plurality of compartments forming a series of flow channels by a partition plate 28, and the compartment forming the downstream end of the series of flow channels and the cooling means inlet for the semiconductor device 21 in the computer main body 11 are connected to each other. They are connected by a liquid pipe 18. Also, semiconductor equipment! !
21 cooling means outlet.
前記貯槽９内の一連の流路の上流端とが、戻り管１９に
より接続され、該戻り管１９には、渦巻きポンプ１２が
その吐出口を貯槽９側にして介装されている。また、貯
槽９の前記一連の流路の上流端に接続して冷却媒体取り
出し管２９が設けられ、該冷却媒体取り８管２９の他端
は、放熱コイル３１に接続されている。放熱コイル３１
の他端は、冷却媒体返り管３０により、貯槽９の前記一
連の流路の下流端に接続されている。放熱コイル３１は
、圧縮機１６、空冷用送風ファン１７を備えた冷凍機２
２により冷却されるように構成されている。前記冷却媒
体取り出し管２９には渦巻きポンプ１５が吸込口を貯槽
９側にして介装されており、貯槽９には液位センサ２４
が設けられている。液位センサ２４は制御部２３に接続
されており、制御部２３は、さらに弁２６，２７、冷凍
機２２およびポンプ１５に接続されている。The upstream ends of the series of channels in the storage tank 9 are connected by a return pipe 19, and a centrifugal pump 12 is interposed in the return pipe 19 with its discharge port facing the storage tank 9 side. Further, a cooling medium take-off pipe 29 is provided connected to the upstream end of the series of flow paths of the storage tank 9, and the other end of the coolant take-off pipe 29 is connected to a heat radiation coil 31. Heat dissipation coil 31
The other end is connected to the downstream end of the series of flow paths in the storage tank 9 by a coolant return pipe 30 . The heat radiation coil 31 is connected to a refrigerator 2 equipped with a compressor 16 and an air cooling fan 17.
2. A centrifugal pump 15 is installed in the cooling medium extraction pipe 29 with its suction port facing the storage tank 9, and a liquid level sensor 24 is installed in the storage tank 9.
is provided. The liquid level sensor 24 is connected to the control section 23, which is further connected to the valves 26, 27, the refrigerator 22, and the pump 15.
計算機の発熱量は、計算機の稼働状態により変動するが
、短時間しか発生しない最大発熱量に見合う冷凍機能力
を保有するのは不経済である。また、夜間には、冷凍機
２２の圧縮機１６や送風ファン１７が運転されると、そ
の運転音が騒音となる恐れがあるので、夜間は冷凍機の
停止が望まれる。凝固熱を利用する相変化冷却媒体は、
単位体積当りの熱保持量（Ｊ／ｋｇ）が大きく、蓄熱密
度が大きいので、比較的少量の冷却媒体の貯蔵で大量の
冷熱を蓄熱できる０本実施例では、ポンプ１５により、
放熱コイル３１ヘエマルジヨン状の冷却媒体が送られ、
冷凍機２２で冷却媒体の相変化物質の液滴が凝固されス
ラリー状の冷却媒体となる。スラリー状となった冷却媒
体は冷却媒体返し管３０を経て、貯槽９内に形成された
一連の流路の下流端に流入する。冷凍機による冷却媒体
のスラリー化が継続されると、貯槽９内のスラリー状冷
却媒体の量は次第に増加し、エマルジョン状冷却媒体と
スラリー状冷却媒体の境界は、前記−連の流路の下流端
から上流側に向って移動する。The calorific value of a computer varies depending on the operating state of the computer, but it is uneconomical to have a refrigeration function that is adequate for the maximum calorific value that is generated only for a short period of time. Further, when the compressor 16 and the blower fan 17 of the refrigerator 22 are operated at night, the operation noise may become a noise, so it is desirable to stop the refrigerator at night. Phase change cooling media that utilize solidification heat are
Since the amount of heat retained per unit volume (J/kg) is large and the heat storage density is large, a large amount of cold heat can be stored by storing a relatively small amount of cooling medium. In this embodiment, the pump 15
An emulsion-like cooling medium is sent to the heat dissipation coil 31,
In the refrigerator 22, droplets of the phase change material of the cooling medium are solidified to become a slurry-like cooling medium. The cooling medium in the form of slurry flows through the cooling medium return pipe 30 into the downstream end of a series of channels formed in the storage tank 9. As the cooling medium continues to be slurried by the refrigerator, the amount of the slurry cooling medium in the storage tank 9 gradually increases, and the boundary between the emulsion cooling medium and the slurry cooling medium is located downstream of the above-mentioned flow path. Move upstream from the end.
スラリー状冷却媒体の量の増加とともに、貯槽内の液位
が変化し、あらかじめ定められた液位に達したら、制御
部２３は、冷凍機２２およびポンプ１５を停止する。ま
た、日中は液位がある高さまで変動したら、冷凍機とポ
ンプが起動されて、冷却媒体のスラリー化が行われるが
、夜間は冷却媒体のスラリー化が開始される液位設定が
変化され、貯槽内のスラリー状冷却媒体の蜂量が限界レ
ベルまで低下してから、スラリ〒化が開始される。貯槽
９は、前述のように、一連の流路をなす区画に細分化さ
れており、スラリー状冷却媒体とエマルジョン状冷却媒
体とが混合せず、かつ前記流路内・の流れは流路内を均
一に流れるいわゆるピストン流れで流れる。上述の運転
により、日中、特に冷却負荷の小さい間にスラリー状の
冷却媒体が貯槽内に貯えられ、貯えられたスラリー状の
冷却媒体が、負荷が増大したときに、又夜間の計算機の
冷却用に供給される０本実施例によれば、蓄熱機能を有
するので、冷凍機の容量の低減および夜間の騒音防止の
効果がある。As the amount of the slurry cooling medium increases, the liquid level in the storage tank changes, and when a predetermined liquid level is reached, the control unit 23 stops the refrigerator 22 and the pump 15. Also, during the day, when the liquid level fluctuates to a certain height, the refrigerator and pump are started to slurry the cooling medium, but at night, the liquid level setting at which the cooling medium starts to slurry is changed. Slurrying is started after the amount of slurry cooling medium in the storage tank has decreased to a critical level. As mentioned above, the storage tank 9 is subdivided into sections forming a series of flow paths, and the slurry cooling medium and the emulsion cooling medium do not mix, and the flow within the flow paths is similar to that of the flow paths. Flows uniformly in a so-called piston flow. Through the above operation, slurry-like cooling medium is stored in the storage tank during the day, especially when the cooling load is small, and the stored slurry-like cooling medium is used for cooling computers at night when the load increases. According to this embodiment, since it has a heat storage function, it has the effect of reducing the capacity of the refrigerator and preventing noise at night.
本発明に用いられるエマルジョン型冷却媒体としては大
きく分けて２種類ある。一つはＷ１０エマルジョン型冷
却媒体で、液滴（Ｗ相）と、その液滴と疎液性物質（０
相）とからなり、他の一つはＯ／Ｗエマルジョン型冷却
媒体で液滴（０相）と、その液滴と疎液性物質（Ｗ相）
とからなる。There are roughly two types of emulsion type cooling media used in the present invention. One is a W10 emulsion type cooling medium, which consists of droplets (W phase) and the droplets and a lyophobic substance (0
The other is an O/W emulsion type cooling medium that consists of droplets (0 phase) and the droplets and a lyophobic substance (W phase).
It consists of
Ｗ相は親水性で、０相は疎水（親油）性である。The W phase is hydrophilic and the 0 phase is hydrophobic (lipophilic).
液滴（前者のＷ相、後者の０相）には、使用温度（冷却
温度）で固相から液相に相変化する物質が用いられ、該
液滴と疎液性である物質（前者の０相、後者のＷ相）に
は、使用条件下で相変化しない物質が用いられる。A substance that changes phase from a solid phase to a liquid phase at the operating temperature (cooling temperature) is used for the droplets (the former W phase, the latter 0 phase), and a substance that is lyophobic with the droplets (the former W phase and the latter 0 phase) is used. For the 0 phase and the latter W phase, a substance that does not undergo phase change under the conditions of use is used.
液滴をなす物質としては、水（２７３Ｋ）、塩化カルシ
ウム６水塩（３０２，７Ｋ）、硫酸ナトリラム１０水塩
（３０５，４Ｋ）、Ｎａ、ＨＰＯ４１２Ｈ，Ｏ（３０８
Ｋ）、Ｚｎ （Ｎｏ、）！−６Ｈ，０（３０９，４Ｋ
）、Ｎａ、Ｓ、０３−５Ｈ，Ｏ（３２１Ｋ）、等の無機
水和塩、カプリル酸（２８９，５Ｋ）、カプリン酸（３
０４，５Ｋ）、ラウリン酸（３１５に〜３１７Ｋ）、等
の有機物、ＣａＣｎ、＋ＭｇＣｊｍ、＋Ｈ，Ｏ（４１：
１０：４９） （２９８Ｋ）等（ｉ’） 共晶混合物、
ＳＱ、−６Ｈ，Ｏ（２８０Ｋ）、Ｃ４Ｈ，Ｏ−１７，２
Ｈ，Ｏ（２７７，４Ｋ）、（ＣＨ３）３Ｎ・１０”／、
Ｈ，Ｏ（２７８，９Ｋ）等の包接形水和物、オクタデカ
ン（３０１Ｋ）等のパラフィン類。Substances forming droplets include water (273K), calcium chloride hexahydrate (302,7K), sodium sulfate decahydrate (305,4K), Na, HPO412H,O (308
K), Zn (No,)! -6H,0(309,4K
), inorganic hydrated salts such as Na, S, 03-5H, O (321K), caprylic acid (289,5K), capric acid (3
organic substances such as 04,5K), lauric acid (315 to 317K), CaCn, +MgCjm, +H,O (41:
10:49) (298K) etc. (i') eutectic mixture,
SQ, -6H,O (280K), C4H,O-17,2
H, O (277,4K), (CH3)3N・10”/,
Inclusion type hydrates such as H, O (278,9K), paraffins such as octadecane (301K).
デシルアルコール（２８０Ｋ）、ステアリルアルコール
（３３１Ｋ）等の疎水性アルコール類があり、（）内に
示した凝固温度により選択して用いられる。There are hydrophobic alcohols such as decyl alcohol (280K) and stearyl alcohol (331K), which are selected and used according to the coagulation temperature shown in parentheses.
液滴を分散させる物質としては、液滴の凝固温度で凝固
しないもので、Ｗ相液部（親水性）に対しては、疎水性
物質である高沸点油（モノイソプロピルナフタレン、ジ
イソプロピルナフタレン、トリイソプロピルナフタレン
等のナフタレン系や、ジベンジルトルエン、エチルジフ
ェニル、ジアリルアルカン、バラシイメン、重質アルキ
ルベンゼン等を主成分とする油）が適している。また０
相液滴（疎水性）に対しては、水又は無機水溶液が適し
ている。The substance for dispersing the droplets is one that does not solidify at the solidification temperature of the droplets. Suitable oils include naphthalene-based oils such as isopropylnaphthalene, dibenzyltoluene, ethyldiphenyl, diallylalkane, barrachimene, and heavy alkylbenzene. 0 again
For phase droplets (hydrophobic), water or inorganic aqueous solutions are suitable.
安定したエマルジョンの作成には、乳化剤が必要で、多
価アルコール脂肪酸エステル（脂肪酸モノグリセライド
、ソルビタン脂肪酸モノエステル等）やポリオキシアル
キレン系（ポリオキシプロピレン、アルキルエーテル、
ポリオキシエチレン、ソルビタン脂肪酸モノエステル等
）の非イオン系乳化剤が適する。To create a stable emulsion, emulsifiers are required, such as polyhydric alcohol fatty acid esters (fatty acid monoglycerides, sorbitan fatty acid monoesters, etc.) and polyoxyalkylenes (polyoxypropylene, alkyl ethers, etc.).
Nonionic emulsifiers such as polyoxyethylene, sorbitan fatty acid monoester, etc.) are suitable.
又、相変化する物質と相変化しない物質が相互に溶解す
る溶液型冷却媒体としては、無機水溶液、エチレングリ
コール水溶液やガスハイドレートを形成する気体水和物
である水とイソブタン、プロパン、フレオン類、エタン
、臭化メチルのひとつ以上の混合物が適している。混合
比により凝固温度が変化する。In addition, as a solution-type cooling medium in which a substance that changes phase and a substance that does not change phase mutually dissolve, inorganic aqueous solutions, ethylene glycol aqueous solutions, and gas hydrates that form gas hydrates such as water, isobutane, propane, and freons are used. , ethane, methyl bromide are suitable. The solidification temperature changes depending on the mixing ratio.
前記第１の実施例に用いられた相変化冷却媒体はＷ１０
エマルジョン型冷却媒体と、Ｗ１０エマルジョン型冷却
媒体である。前者は、Ｗ相に水（４０ｗｔ％）、Ｏ相に
バラシイメン系油（５９ｗｔ％）、乳化剤としてソルビ
タンモノオレエート（１ｗｔ％）、が調合されて用いら
れた。冷却能力は従来の水の約２１ Ｘ １０”Ｊ／ｋ
ｇに比べて約６倍の１３４Ｘ１０’Ｊ／ｋｇであり、水
を顕熱利用方式で用いる場合に比べ、冷却媒体流量が／
、に、配管径が’ ／ ｉ 、 ｓに低減され、かつ半
導体装置が約２７３にの一定温度で冷却された。The phase change cooling medium used in the first embodiment was W10.
They are an emulsion type cooling medium and a W10 emulsion type cooling medium. The former was used by mixing water (40 wt%) in the W phase, balasimen oil (59 wt%) in the O phase, and sorbitan monooleate (1 wt%) as an emulsifier. Cooling capacity is approximately 21 x 10”J/k compared to conventional water
The cooling medium flow rate is 134X10'J/kg, which is approximately 6 times that of
, the pipe diameter was reduced to '/i,s, and the semiconductor device was cooled at a constant temperature of about 273°C.
後者のＷ１０エマルジ１ン型冷却媒体としては。As for the latter W10 emulsion type cooling medium.
０相にデシルアルコール（３０ｗｔ％）、Ｗ相に水（７
０ｗｔ％）が調合されて用いられた０本冷却媒体では、
半導体装置が約２８０にの一定温度で均一に冷却された
。Decyl alcohol (30 wt%) in the 0 phase, water (7 wt%) in the W phase.
0wt%) was used as a mixed cooling medium.
The semiconductor device was uniformly cooled at a constant temperature of about 280°C.
いずれの場合も、半導体装置出入口での冷却媒体の温度
差がない状態で用いられた。In both cases, the semiconductor device was used without any temperature difference between the cooling medium at the entrance and exit.
本発明によれば、固相が液相に相変化する際に吸収する
熱を利用して半導体装置の冷却が行われるので、吸収す
る熱量当りの冷却媒体の流量が少なくてすみ、半導体装
置冷却のためのスペースを小さくすることが可能となっ
て計算機の高集積化、コンパクト化の効果がある。また
、冷却媒体中の固相（固体粒子）が液相に相変化してい
る間は、冷却媒体の温度は一定に保持されるので、半導
体装ｉ！（計算機）全体を均一な温度で冷却することが
可能になり、計算機の性能安定の効果がある。According to the present invention, since the semiconductor device is cooled using the heat absorbed when the solid phase changes to the liquid phase, the flow rate of the cooling medium per amount of heat absorbed is small, and the semiconductor device is cooled. This makes it possible to reduce the space required for computer processing, which has the effect of making computers more highly integrated and more compact. Furthermore, while the solid phase (solid particles) in the cooling medium is undergoing a phase change to the liquid phase, the temperature of the cooling medium is maintained constant, so the semiconductor device i! It becomes possible to cool the entire computer at a uniform temperature, which has the effect of stabilizing the performance of the computer.
第１図は本発明の第１の実施例を示す系統図、第２図は
第１図に示す実施例の主要部を示す斜視図、第３図は第
１図に示す実施例の部分詳細断面図、第４図は本発明の
第２の実施例を示す系統図。
第５図は本発明の第３の実施例を示す系統図で、第６図
は本発明の第４の実施例を示す系統図である。
１．２・・・冷却媒体、４・・・相変化しない物質（液
相）、５・・・相変化する物質（固体粒子）、６・・・
相変化する物質（液滴）、９・・・固相を含む冷却媒体
を貯える容器、１０・・・容器、ＩＩＡ・・・記憶部、
１１Ｂ・・・演算部、１１Ｃ・・・制御部、１２・・・
ポンプ、１３・・・熱交換器、１８・・・送液管、１９
・・・戻り管、２ｏ・・・入出力手段、２１・・・半導
体装置、２１Ａ・・・冷却手段（冷却媒体流路）、２１
Ｇ・・・半導体素子、２１Ｅ・・・伝熱面、２２Ａ・・
・凝固手段（冷却コイル）、２２Ｂ・・・凝固手段（ヒ
ートパイプ）、２３・・・凝固量を制御する手段（制御
部）、２４・・・冷却媒体中の凝固量を検出する手段（
液位センサ）、２５・・・冷却媒体の温度を検出する手
段（温度センサ）。Fig. 1 is a system diagram showing a first embodiment of the present invention, Fig. 2 is a perspective view showing the main parts of the embodiment shown in Fig. 1, and Fig. 3 is a partial detail of the embodiment shown in Fig. 1. A sectional view and FIG. 4 are system diagrams showing a second embodiment of the present invention. FIG. 5 is a system diagram showing a third embodiment of the invention, and FIG. 6 is a system diagram showing a fourth embodiment of the invention. 1.2... Cooling medium, 4... Substance that does not change phase (liquid phase), 5... Substance that changes phase (solid particles), 6...
Phase-changing substance (droplet), 9... Container for storing a cooling medium containing a solid phase, 10... Container, IIA... Storage unit,
11B...Arithmetic unit, 11C...Control unit, 12...
Pump, 13... Heat exchanger, 18... Liquid sending pipe, 19
...Return pipe, 2o...Input/output means, 21...Semiconductor device, 21A...Cooling means (cooling medium flow path), 21
G...Semiconductor element, 21E...Heat transfer surface, 22A...
・Coagulation means (cooling coil), 22B... Coagulation means (heat pipe), 23... Means for controlling the amount of coagulation (control unit), 24... Means for detecting the amount of coagulation in the cooling medium (
liquid level sensor), 25...Means for detecting the temperature of the cooling medium (temperature sensor).
Claims (1)
冷却手段とを備えた半導体装置において、該冷却手段に
、使用温度においてその一部が外部から凝固熱を奪って
固相から液相に相変化するとともに固相を含んだ状態で
流動性のある物質が、冷却媒体として用いられることを
特徴とする半導体装置。 ２、半導体素子を冷却する冷却手段に接続して設けられ
、該冷却手段が半導体素子から除去した熱を外部に放出
する冷却装置において、該冷却装置が、冷却媒体である
、相変化する流動体を冷却して少なくともその一部を凝
固させる凝固手段を備えていることを特徴とする冷却装
置。 ３、半導体素子を冷却する冷却手段出口に接続されポン
プを介装した戻り管と、該戻り管に接続して設けられ冷
却媒体を収容する容器と、該容器と前記冷却手段の入口
とを接続する送液管と、前記容器内に設けられ冷却媒体
である、相変化する流動体を冷却して少なくともその一
部を凝固させる手段と、を備えている冷却装置。 ４、半導体素子を冷却する冷却手段出口と冷却装置入口
との間を接続する配管中の冷却媒体の温度を検出する手
段と、冷却媒体を収容する容器中の相変化物質の凝固量
を検出する検出手段と、検出された前記温度及び凝固量
とに基づいて冷却媒体中の相変化物質の凝固量を制御す
る手段と、を備えている冷却装置。 ５、検出手段が、容器中の冷却媒体の、液面の位置、密
度、粘性、温度、冷却媒体中の固相と液相の比率のいず
れか一つ以上を検出する手段であることを特徴とする請
求項３に記載の冷却装置。 ６、入出力部と、該入出力部に接続された記憶部と、該
記憶部に接続された演算部と、該演算部に接続された制
御部と、前記記憶部、演算部、制御部の少なくとも一部
に設けられた半導体装置を冷却する冷却装置と、をそ備
えた計算機において、前記半導体装置が請求項１に記載
された半導体装置であることと、前記冷却装置が請求項
２乃至５に記載された冷却装置のいずれかであることと
、を特徴とする計算機。 ７、入出力部と、該入出力部に接続された記憶部と、該
記憶部に接続された演算部と、該演算部に接続された制
御部と、前記記憶部、演算部、制御部の少なくとも一部
を冷却する冷却装置と、を備えた計算機において、前記
記憶部、演算部、制御部の少なくとも一部に請求項１に
記載された半導体装置が装着されていることと、該半導
体装置の冷却手段に接続して冷却媒体を冷却される媒体
とし顕然利用液体を冷却する側の媒体とする熱交換器が
設けられていることと、冷却装置は前記熱交換器の顕熱
利用液体側に接続され冷却媒体を介して前記記憶部、演
算部、制御部の少なくとも一部をなす半導体装置を冷却
するものであることと、を特徴とする計算機。 ８、冷却装置が、ヒートパイプであることをを特徴とす
る請求項７に記載の計算機。 ９、使用温度においてその一部が外部から凝固熱を奪っ
て固相から液相に相変化するとともに固相を含んだ状態
で流動性のある冷却媒体が、固相を含んだ状態で伝熱面
を介して半導体素子に接触させられ、前記固相が該半導
体素子の熱を奪って液相化することによって該半導体素
子が冷却されることを特徴とする半導体装置の冷却方法
。 １０、温度により固相と液相の間で相変化する物質が固
相状態でそれと疎液性の物質に分散された状態の流動体
を冷却媒体とし、該冷却媒体を伝熱面を介して半導体素
子に接触させ、前記固相が該半導体素子の熱を奪って液
相化することによって該半導体素子が冷却されることを
特徴とする半導体装置の冷却方法。 １１、温度により固相と液相の間で相変化する物質が固
相状態でそれと親液性でかつ使用状態で相変化しない物
質に分散された状態の流動体を冷却媒体とし、該冷却媒
体を伝熱面を介して半導体素子に接触させ、前記固相が
該半導体素子の熱を奪って液相化することによって該半
導体素子が冷却されることを特徴とする半導体装置の冷
却方法。 １２、固相を含む冷却媒体を貯える容器が設けられ、半
導体素子を冷却して固相が溶解された冷却媒体中の相変
化物質を所定の時間再凝固させることなく、半導体素子
の冷却を継続することを特徴とする請求項９、１０また
は１１に記載の半導体装置の冷却方法。 １３、相変化する親水性物質が相変化しない疎水性物質
に分散されている冷却媒体。 １４、相変化する疎水性物質が相変化しない親水性物質
に分散されている冷却媒体。 １５、相変化する物質が該相変化する物質と親液性であ
る相変化しない物質に分散されている冷却媒体。[Claims] 1. In a semiconductor device comprising a semiconductor element and a cooling means for removing heat generated by the semiconductor element, a part of the cooling means absorbs solidification heat from the outside at the operating temperature. A semiconductor device characterized in that a substance that changes phase from a solid phase to a liquid phase and is fluid in a state containing a solid phase is used as a cooling medium. 2. A cooling device that is connected to a cooling means for cooling a semiconductor element and releases heat removed from the semiconductor element by the cooling means to the outside, in which the cooling device uses a phase-changing fluid as a cooling medium. A cooling device comprising a solidifying means for cooling and solidifying at least a part of the cooling device. 3. A return pipe connected to the outlet of the cooling means for cooling the semiconductor element and equipped with a pump, a container connected to the return pipe and containing a cooling medium, and a connection between the container and the inlet of the cooling means. A cooling device comprising: a liquid sending pipe provided in the container; and means for cooling a phase-changing fluid, which is a cooling medium, and solidifying at least a part of the fluid. 4. Means for detecting the temperature of the cooling medium in the piping connecting between the cooling means outlet for cooling the semiconductor element and the cooling device inlet, and detecting the amount of solidification of the phase change material in the container containing the cooling medium. A cooling device comprising: a detection means; and a means for controlling the amount of solidification of the phase change material in the cooling medium based on the detected temperature and the amount of solidification. 5. The detection means is a means for detecting one or more of the liquid level position, density, viscosity, temperature, and ratio of solid phase to liquid phase of the cooling medium in the container. The cooling device according to claim 3. 6. an input/output section, a storage section connected to the input/output section, a calculation section connected to the storage section, a control section connected to the calculation section, and the storage section, calculation section, and control section. a cooling device for cooling a semiconductor device provided in at least a part of the computer, wherein the semiconductor device is the semiconductor device according to claim 1, and the cooling device is the semiconductor device according to claim 2. 5. A computer characterized by being any of the cooling devices described in 5. 7. an input/output section, a storage section connected to the input/output section, a calculation section connected to the storage section, a control section connected to the calculation section, the storage section, the calculation section, and the control section a cooling device for cooling at least a portion of the semiconductor device, wherein at least a portion of the storage section, the arithmetic section, and the control section are equipped with the semiconductor device according to claim 1; A heat exchanger is provided which is connected to the cooling means of the device and uses the cooling medium as the medium to be cooled and the sensible use liquid as the medium to be cooled, and the cooling device uses the sensible heat of the heat exchanger. A computer, characterized in that it is connected to a liquid side and cools a semiconductor device forming at least a part of the storage section, calculation section, and control section via a cooling medium. 8. The computer according to claim 7, wherein the cooling device is a heat pipe. 9. At the operating temperature, a part of the cooling medium absorbs solidification heat from the outside and undergoes a phase change from solid phase to liquid phase, and the fluid coolant containing the solid phase transfers heat while containing the solid phase. 1. A method for cooling a semiconductor device, characterized in that the solid phase is brought into contact with a semiconductor element through a surface, and the semiconductor element is cooled by the solid phase absorbing heat from the semiconductor element and turning into a liquid phase. 10. A cooling medium is a fluid in which a substance whose phase changes between a solid phase and a liquid phase depending on the temperature is dispersed in a solid phase and a lyophobic substance, and the cooling medium is passed through a heat transfer surface. A method for cooling a semiconductor device, characterized in that the semiconductor device is cooled by bringing the semiconductor device into contact with the semiconductor device, and the solid phase absorbs heat from the semiconductor device and turns into a liquid phase. 11. The cooling medium is a fluid in which a substance whose phase changes between a solid phase and a liquid phase depending on temperature is dispersed in a solid state and a substance which is lyophilic to the solid phase and does not change its phase in the state of use. A method for cooling a semiconductor device, characterized in that the semiconductor element is cooled by bringing the solid phase into contact with a semiconductor element via a heat transfer surface, and the solid phase absorbs heat from the semiconductor element and turns into a liquid phase. 12. A container for storing a cooling medium containing a solid phase is provided, and the cooling of the semiconductor element is continued for a predetermined period of time without re-solidifying the phase change substance in the cooling medium in which the solid phase has been dissolved by cooling the semiconductor element. 12. The method for cooling a semiconductor device according to claim 9, 10, or 11. 13. A cooling medium in which a hydrophilic substance that changes phase is dispersed in a hydrophobic substance that does not change phase. 14. A cooling medium in which a phase-changing hydrophobic substance is dispersed in a non-phase-changing hydrophilic substance. 15. A cooling medium in which a phase-changing substance is dispersed in a non-phase-changing substance that is lyophilic to the phase-changing substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1067984A JPH02246255A (en) | 1989-03-20 | 1989-03-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1067984A JPH02246255A (en) | 1989-03-20 | 1989-03-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02246255A true JPH02246255A (en) | 1990-10-02 |
Family
ID=13360756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1067984A Pending JPH02246255A (en) | 1989-03-20 | 1989-03-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02246255A (en) |
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| JP2004198022A (en) * | 2002-12-18 | 2004-07-15 | Ishikawajima Harima Heavy Ind Co Ltd | Middle temperature exhaust heat recovery system |
| KR100671774B1 (en) * | 2005-03-24 | 2007-01-19 | 다이니폰 스크린 세이조우 가부시키가이샤 | Apparatus for treating a substrate |
| JP2007146043A (en) * | 2005-11-29 | 2007-06-14 | Univ Nihon | Cooling medium, cooling unit, and cooling device |
| JP2007239697A (en) * | 2006-03-10 | 2007-09-20 | Kobe Univ | High temperature region cooling device using latent heat transporting inorganic hydrate slurry |
| JP2008526028A (en) * | 2004-12-23 | 2008-07-17 | オンスクリーン テクノロジーズ インコーポレイテッド | Cooling device incorporating heat transfer mesh |
| JP2010203691A (en) * | 2009-03-04 | 2010-09-16 | Panasonic Corp | Heat storage device and water heater using the same |
| WO2016107709A1 (en) * | 2014-12-30 | 2016-07-07 | Siemens Aktiengesellschaft | Cooling apparatus for electrical equipment |
| US10518361B2 (en) | 2014-11-21 | 2019-12-31 | Siemens Aktiengesellschaft | Method of manufacturing a component and component |
| JP2021511399A (en) * | 2018-01-05 | 2021-05-06 | カストロール リミテッド | Heat exchange fluid / coolant phase change material |
| US11964549B2 (en) | 2018-07-04 | 2024-04-23 | Bp P.L.C. | Multiple cooling circuit systems and methods for using them |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004198022A (en) * | 2002-12-18 | 2004-07-15 | Ishikawajima Harima Heavy Ind Co Ltd | Middle temperature exhaust heat recovery system |
| JP2008526028A (en) * | 2004-12-23 | 2008-07-17 | オンスクリーン テクノロジーズ インコーポレイテッド | Cooling device incorporating heat transfer mesh |
| KR100671774B1 (en) * | 2005-03-24 | 2007-01-19 | 다이니폰 스크린 세이조우 가부시키가이샤 | Apparatus for treating a substrate |
| JP2007146043A (en) * | 2005-11-29 | 2007-06-14 | Univ Nihon | Cooling medium, cooling unit, and cooling device |
| JP2007239697A (en) * | 2006-03-10 | 2007-09-20 | Kobe Univ | High temperature region cooling device using latent heat transporting inorganic hydrate slurry |
| JP2010203691A (en) * | 2009-03-04 | 2010-09-16 | Panasonic Corp | Heat storage device and water heater using the same |
| US10518361B2 (en) | 2014-11-21 | 2019-12-31 | Siemens Aktiengesellschaft | Method of manufacturing a component and component |
| WO2016107709A1 (en) * | 2014-12-30 | 2016-07-07 | Siemens Aktiengesellschaft | Cooling apparatus for electrical equipment |
| JP2021511399A (en) * | 2018-01-05 | 2021-05-06 | カストロール リミテッド | Heat exchange fluid / coolant phase change material |
| US11964549B2 (en) | 2018-07-04 | 2024-04-23 | Bp P.L.C. | Multiple cooling circuit systems and methods for using them |
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