JPH02241064A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPH02241064A JPH02241064A JP1062801A JP6280189A JPH02241064A JP H02241064 A JPH02241064 A JP H02241064A JP 1062801 A JP1062801 A JP 1062801A JP 6280189 A JP6280189 A JP 6280189A JP H02241064 A JPH02241064 A JP H02241064A
- Authority
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- Prior art keywords
- light
- layer
- quantum well
- signal light
- well layer
- Prior art date
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 230000005284 excitation Effects 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000001360 synchronised effect Effects 0.000 claims abstract description 4
- 238000013139 quantization Methods 0.000 claims description 13
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 230000005283 ground state Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000003362 semiconductor superlattice Substances 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000005476 size effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
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- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体受光素子に関し、
半導体基板と、前記半導体基板上に設けた第１のコンタ
クト層と、前記第１のコンタクト層上に設けた多重量子
井戸層と、前記多重量子井戸層上に設けた第２のコンタ
クト層と、信号光入射面と、励起光入射面と、外部電圧
印加手段とを少なくとも備え、短波長の励起光を前記多
重量子井戸層に照射して、価電子帯から前記多重量子井
戸層内の量子化基底準位へ電子を励起し、長波長の信号
光の入射時に前記量子化基底準位から高い量子化準位へ
励起されるキャリア電子の供給を行うようにして半導体
受光素子を構成する。[Detailed Description of the Invention] [Summary] Regarding a semiconductor light receiving element, a semiconductor substrate, a first contact layer provided on the semiconductor substrate, a multiple quantum well layer provided on the first contact layer, and the The method includes at least a second contact layer provided on the multiple quantum well layer, a signal light incident surface, an excitation light incident surface, and an external voltage applying means, and is configured to irradiate the multiple quantum well layer with short wavelength excitation light. The carrier electrons are excited from the valence band to the quantization base level in the multi-quantum well layer, and are excited from the quantization base level to a higher quantization level when a long wavelength signal light is incident. The semiconductor light-receiving element is configured so as to supply the following.
本発明は、超長波長帯の光を検知するための高感度半導
体受光素子の改良に関する。The present invention relates to improvements in high-sensitivity semiconductor light-receiving elements for detecting light in an ultra-long wavelength band.
波長５〜１５μｍ帯の赤外光は、物体温度の非接触測定
や、公害物質（たとえば、ＣＯ□ガス）の検出などの分
野で使用され、近年、益々その重要性が高まってきてお
り、このような長波長帯での光を検知する高感度の受光
素子が求められている。Infrared light in the wavelength band of 5 to 15 μm is used in fields such as non-contact measurement of object temperature and detection of pollutants (e.g. CO□ gas), and has become increasingly important in recent years. There is a need for a highly sensitive light-receiving element that can detect light in such long wavelength bands.
長波長帯の光、すなわち、赤外光を検出する光検知器、
と（に、高速応答用光検知器としては、バンドギャップ
が０．５ ｅＶ以下といった程度の、ＩｎＳｂやＨｇＣ
ｄＴｅなどを用いた光電導タイプ、あるいは、ｐｂｌ−
Ｘ Ｓｎ ｘ Ｔｅを用いた光起電力タイプなどが知ら
れている。A photodetector that detects long-wavelength light, that is, infrared light;
(In addition, InSb and HgC with a band gap of 0.5 eV or less are suitable for high-speed response photodetectors.
Photoconductive type using dTe etc. or pbl-
A photovoltaic type using X Sn x Te is known.
しかし、Ｓ／Ｎや受光感度に問題があうたり、大きな単
結晶を作るのが困難なため、多素子化ができに（いなど
今後のより高度な応用分野に充分対応できない状況にあ
った。However, due to problems with S/N and light-receiving sensitivity, and the difficulty of making large single crystals, it was not possible to increase the number of elements (such as increasing the number of elements), making it unable to adequately support future more advanced application fields.
最近になって、新しい半導体受光素子として、量子井戸
構造を用い、量子井戸内の電子準位間の遷移を利用した
長波長領域における高感度受光素子が提案されている。Recently, as a new semiconductor light-receiving element, a high-sensitivity light-receiving element in a long wavelength region that uses a quantum well structure and utilizes transitions between electronic levels within the quantum well has been proposed.
第５図は従来の量子井戸層を有する半導体受光素子の例
を説明する図で、同図（イ）は素子断面構造図、同図（
ロ）はエネルギーバンド図、同図（ハ）は信号光照射に
よる量子井戸内のキャリア量・出力の時間変化図である
。FIG. 5 is a diagram explaining an example of a conventional semiconductor light-receiving device having a quantum well layer.
(b) is an energy band diagram, and (c) is a time change diagram of the amount of carriers and output in the quantum well due to signal light irradiation.
図中、１は基板で、たとえば、ＧａＡｓなどを使用する
。２は第１のコンタクト層で、たとえば、ｎ＋４ａＡｓ
ｓ ３は多重量子井戸層で、たとえば、ＧａＡｓ／＾
ｌ ＧａＡｓからなる多重超格子層であり、分子ビーム
エピタキシャル生成法（ＭＢＥ法）、あるいは、有機金
属分解製膜法（ＭＯ−ＣＶＤ）などで、井戸層３１゜障
壁層３２とをそれぞれ交互に、各数１０層づ＼積層した
ものである。４は第２のコンタクト層で、たとえば、ｎ
ゝ−ＧａＡｓから構成される。In the figure, 1 is a substrate made of, for example, GaAs. 2 is the first contact layer, for example, n+4aAs
s3 is a multiple quantum well layer, for example, GaAs/^
l It is a multiple superlattice layer made of GaAs, and the well layer 31 and the barrier layer 32 are alternately formed by molecular beam epitaxial generation (MBE) or metal organic decomposition deposition (MO-CVD), respectively. It is made up of several 10 layers each. 4 is the second contact layer, for example n
-Constructed from GaAs.
５は検知する信号光（ｈν３）の入射面、７はは電圧印
加手段で電Ｆｉ７ａ、７ｂを通して、信号光（ｈν、）
により励起されたキャリア（電子）を外部に電流として
取り出し、電気出力として検出するためのものである。5 is the incident plane of the signal light (hν3) to be detected, and 7 is a voltage applying means to pass the electric signal Fi7a, 7b to the signal light (hν,).
This is to take out the excited carriers (electrons) to the outside as a current and detect them as electrical output.
半導体超格子において、井戸層の巾が１００Å以下とい
った電子の量子力学的波長と同程度に狭くなると、いわ
ゆる、量子サイズ効果により、量子井戸のエネルギーバ
ンドの***離散化（バンドスブリフティング）が起こり
、井戸層内に量子化準位が生じる（電子情報通信学会編
：電子情報通信ハンドブック、 ｐ ４３０．１９８
８参照）。In a semiconductor superlattice, when the width of the well layer becomes as narrow as the quantum mechanical wavelength of electrons, such as 100 Å or less, the energy band of the quantum well becomes discretized (bandwifting) due to the so-called quantum size effect. A quantization level is generated in the well layer (edited by the Institute of Electronics, Information and Communication Engineers: Electronics, Information and Communication Handbook, p 430.198
8).
同図（ロ）はこのような半導体超格子層のエネルギーバ
ンド図で、伝導帯２０において各井戸層３１（たとえば
、ＧａＡｓ層）の深さ（バンドオフセット）に対応して
、量子井戸のの中に破線で示した量子化準位が生じた状
態を示している。なお、Ｑ。Figure (b) is an energy band diagram of such a semiconductor superlattice layer, in which the inside of the quantum well corresponds to the depth (band offset) of each well layer 31 (for example, a GaAs layer) in the conduction band 20. This shows the state in which the quantization level shown by the broken line occurs. In addition, Q.
はその基底状態で、量子化基底準位８に相当している。is its ground state, which corresponds to the quantized base level 8.
一方、価電子帯２１には、図示したように、−ｍに余り
大きなバンドオフセットが発生しないことが知られてい
る。なお、このエネルギーバンド図は外部からの電界印
加により傾斜した状態を図示しである。On the other hand, in the valence band 21, as shown in the figure, it is known that a band offset that is too large in −m does not occur. Note that this energy band diagram shows a state where the energy band is tilted due to the application of an external electric field.
通常、初期状態においては、井戸層３１の基底状態Ｑ１
には、熱励起などによって電子（ｅｌ）が確率的に存在
しているので、こ＼に信号光（ｈν、）が照射されると
、基底状態Ｑ、に存在する電子は高い準位Ｑ、に励起さ
れ、障壁層３２を乗り越えた電子（ｅｘ Ｉ ｅ８．
）は外部電圧印加手段７による電界により、外部に電流
として取り出され検出される。Normally, in the initial state, the ground state Q1 of the well layer 31
Since electrons (el) exist stochastically in , due to thermal excitation, etc., when signal light (hν, ) is irradiated on \, the electrons existing in the ground state Q, change to a higher level Q, The electrons (ex I e8.
) is taken out to the outside as a current by the electric field generated by the external voltage applying means 7 and detected.
すなわち、非常に薄い光電導領域、すなわち、半導体超
格子層の中に、多数の量子井戸を構成して光の検出を行
うので、高感度の半導体受光素子が得られる。That is, since light is detected by configuring a large number of quantum wells in a very thin photoconductive region, that is, a semiconductor superlattice layer, a highly sensitive semiconductor light-receiving device can be obtained.
また、超格子層の材料、厚さなどその構成を変えて、バ
ンドオフセットを適宜に設定し、検知する信号光（ｈν
３）の波長帯域を選ぶことができる。In addition, by changing the material, thickness, and other configurations of the superlattice layer, we can set the band offset appropriately and detect the signal light (hν
3) wavelength band can be selected.
しかし、上記従来の半導体受光素子おいて、連続信号光
、あるいは、高速パルス信号光を照射すると、熱励起な
どによるキャリアの補給が追いつかなくなる。However, in the conventional semiconductor light-receiving element described above, when continuous signal light or high-speed pulse signal light is irradiated, carrier replenishment due to thermal excitation or the like cannot keep up.
同図（ハ）はその状況を模式的に示した。すなわち、（
ａ）のような信号光（ｈνＳ）パルスが多重量子井戸層
３に入射すると、（ｂ）に示したように、量子井戸内の
平均的キャリア（電子）量が信号光の照射の都度減少し
、その結果、（ｃ）に示した如く、出力レベルは徐々に
低下して検出感度が劣化するという問題があり、その解
決が必要であった。Figure (c) schematically shows the situation. That is, (
When a signal light (hνS) pulse as shown in a) enters the multi-quantum well layer 3, the average amount of carriers (electrons) in the quantum well decreases each time the signal light is irradiated, as shown in (b). As a result, as shown in (c), there is a problem that the output level gradually decreases and the detection sensitivity deteriorates, and it is necessary to solve this problem.
第１図は本発明の詳細な説明する図で、同図の（イ）は
素子断面構造図である。第５図（イ）に示した従来例と
異なる点は、励起光入射面６を設けて励起光（ｈν、）
を多重量子井戸層３に照射させるようにしであることで
ある。FIG. 1 is a diagram for explaining the present invention in detail, and (A) in the same figure is a cross-sectional structural diagram of the element. The difference from the conventional example shown in FIG.
The multi-quantum well layer 3 is to be irradiated with the light.
これにより、価電子帯と量子井戸内の量子化基底準位８
との間のエネルギー差以上の励起光（ｈｖｐ）を、多重
量子井戸層３に照射して量子井戸内の量子化基底準位に
電子の補給を行うようにした。As a result, the valence band and the quantized basis level 8 in the quantum well
The multi-quantum well layer 3 is irradiated with excitation light (HVP) having an energy difference greater than or equal to the energy difference between the two and the electrons are supplied to the quantization base level within the quantum well.
また、励起光（ｈｖｐ）を信号光（ｈν３）と同期させ
て照射することにより、受光素子の暗電流を低下させる
ことができる。Further, by irradiating the excitation light (hvp) in synchronization with the signal light (hv3), the dark current of the light receiving element can be reduced.
一方、信号光（ｈν、）は多重量子井戸層３に垂直でな
（、横または斜め方向から入射させ、信号光（ｈν、）
の吸収を効果的に行わせている。On the other hand, the signal light (hν,) is incident on the multiple quantum well layer 3 not perpendicularly (, laterally or obliquely), and the signal light (hν,)
absorption is carried out effectively.
すなわち、上記の課題は、半導体基板１と、前記半導体
基板１上に設けた第１のコンタクト層２と、前記第１の
コンタクト層２上に設けた多重量子井戸層３と、前記多
重量子井戸層３上に設けた第２のコンタクト層４と、信
号光入射面５と、励起光入射面６と、外部電圧印加手段
７とを少な（とも備え、短波長の励起光を前記多重量子
井戸層３に照射して、価電子帯から前記多重量子井戸層
３内の量子化基底準位８へ電子を励起し、長波長の信号
光の入射時に前記量子化基底準位から高い準位へ励起さ
れるキャリア電子の供給を行うように構成した半導体受
光素子によって解決することができる。That is, the above problem is solved by the semiconductor substrate 1, the first contact layer 2 provided on the semiconductor substrate 1, the multiple quantum well layer 3 provided on the first contact layer 2, and the multiple quantum well layer 3. A second contact layer 4 provided on the layer 3, a signal light incident surface 5, an excitation light incident surface 6, and an external voltage applying means 7 are provided. The layer 3 is irradiated to excite electrons from the valence band to the quantized base level 8 in the multi-quantum well layer 3, and from the quantized base level to a higher level when a long wavelength signal light is incident. This problem can be solved by using a semiconductor light-receiving element configured to supply excited carrier electrons.
さらに、前記励起光を前記信号光と同期したパルス光と
して照射したり、あるいは、前記励起光を前記多重量子
井戸層面の上方から照射し、前記信号光を前記多重量子
井戸層の横または斜め方向から入射させて、よりＳ／Ｎ
を向上させ、より高い感度に安定化させることができる
。Further, the excitation light may be irradiated as pulsed light synchronized with the signal light, or the excitation light may be irradiated from above the surface of the multiple quantum well layer, and the signal light may be irradiated in a lateral or diagonal direction of the multiple quantum well layer. The S/N is better by inputting from
can be improved and stabilized to higher sensitivity.
第１図（ロ）は本発明の受光素子のエネルギーバンド図
である。破線は量子サイズ効果により生じた量子化準位
で、信号光（ｈν、）が照射されると、基底状態Ｑ１に
満たされた電子は高い準位Ｑ７に励起され、障壁層３２
を乗り越へた電子（ｅ３゜ｅａ）は外部電圧印加手段７
による電界により、外部に電流として取り出され検出さ
れる。FIG. 1(b) is an energy band diagram of the light receiving element of the present invention. The broken line is the quantization level caused by the quantum size effect, and when the signal light (hν, ) is irradiated, the electrons filled in the ground state Q1 are excited to the higher level Q7, and the barrier layer 32
The electrons (e3°ea) that have overcome the external voltage application means 7
Due to the electric field caused by this, the current is taken out to the outside and detected.
しかし、すでに述べた如く連続信号光が照射されると、
熱励起などによるキャリアの補給が追いつかず、量子井
戸内のキャリア（電子）が枯渇してしまう。However, as mentioned above, when continuous signal light is irradiated,
The replenishment of carriers through thermal excitation cannot keep up, and the carriers (electrons) in the quantum well are depleted.
そこで、本発明では、価電子帯２１から量子井戸内の量
子化基底準位８へ、キャリア（電子）をポンピングする
のに充分なエネルギーを持った励起光（ｈν、）を量子
井戸層３に照射し、量子井戸内の量子化基底準位が常に
電子で満たされた状態にしておくので、連続信号光を受
光しても受光感度の劣化が起こらないようにすることが
できるのである。Therefore, in the present invention, excitation light (hν,) having sufficient energy to pump carriers (electrons) from the valence band 21 to the quantized base level 8 in the quantum well is applied to the quantum well layer 3. Since the quantization base level in the quantum well is always filled with electrons, it is possible to prevent deterioration of light reception sensitivity even when continuous signal light is received.
さらに、励起光（ｈｖｐ）を信号光（ｈν、）と同期さ
せて照射することにより、入射信号光（ｈν３）がＯの
時には、励起光（ｈν９）も入射しないようにして、受
光素子の暗電流が増加しないようにすることができる。Furthermore, by irradiating the excitation light (hvp) in synchronization with the signal light (hν, ), when the incident signal light (hν3) is O, the excitation light (hν9) is also prevented from entering, thereby darkening the light receiving element. It is possible to prevent the current from increasing.
すなわち、Ｓ／Ｎの向上を図ることができるのである。In other words, it is possible to improve the S/N ratio.
第２図は、これをわかり易く説明した本発明のキャリア
励起方法による出力の時間変化図で、（ａ）は信号光（
ｈν、）のパルス波形例、（ｂ）は励起光（ｈν、）の
パルス波形で信号光（ｈν、）と同期させた連続パルス
光として照射した場合である。FIG. 2 is a time-varying diagram of the output according to the carrier excitation method of the present invention, which explains this in an easy-to-understand manner, and (a) shows the signal light (
(b) is an example of the pulse waveform of the excitation light (hν,) when the pulse waveform of the excitation light (hν,) is irradiated as continuous pulsed light synchronized with the signal light (hν,).
（ｃ）はこの場合の量子井戸内の平均的キャリア量をモ
デル的に示したもので、励起光（ｈｖｐ）で電子が絶え
ずポンピングされているので、はＶ −定と考えてよい
。(c) shows a model of the average carrier amount in the quantum well in this case, and since electrons are constantly pumped by excitation light (HVP), can be considered to be V-constant.
この結果、（ｄ）に示したように、信号光（ｈν、）パ
ルスの入射に対応して、一定の安定した出力が得られる
ことがわかる。As a result, as shown in (d), it can be seen that a constant and stable output can be obtained in response to the incidence of the signal light (hv, ) pulse.
以上のことかられかるように、この受光素子の応答性は
、量子井戸内の電子の消滅時間よりも、信号光（ｈｖｓ
）パルスの間隔を大きくする必要があることで決まって
くるが、通常、その消滅時間は数〜数Ｌｏｐｓなので、
充分高い応答性が得られる。As can be seen from the above, the responsivity of this photodetector is more important than the extinction time of the electrons in the quantum well.
) It is determined by the need to increase the interval between pulses, but normally the extinction time is several to several Lops, so
Sufficiently high responsiveness can be obtained.
また、量子井戸内の量子化準位の電子は、量子井戸層の
垂直方向には自由度がなく離散的で、基底状態Ｑ、にあ
る電子が高い量子化準位Ｑ７に励起されるためには、す
なわち、信号光（ｈν、）のエネルギーを吸収させるた
めには、多重量子井戸層３の垂直方向に信号光（ｈν３
）が電気成分を持っていなければならない。したがって
、信号光（ｈν３）は多重量子井戸層３の上方からでな
く、横または斜め方向から入射させると有効であること
がわかる。一方、励起光（ｈｖｐ）は価電子帯からの電
子の励起であり、照射方向に何らの制約がないので、最
も照射効率がよく、素子構成、も容易な、多重量子井戸
層３の上方から、たとえば、垂直に近い角度で照射すれ
ばよい。In addition, the electrons at the quantization level in the quantum well have no degrees of freedom in the vertical direction of the quantum well layer and are discrete, and because the electrons in the ground state Q are excited to the higher quantization level Q7. In other words, in order to absorb the energy of the signal light (hν, ), the signal light (hν3
) must have an electric component. Therefore, it can be seen that it is effective to make the signal light (hv3) incident not from above the multi-quantum well layer 3 but from the side or oblique direction. On the other hand, the excitation light (HVP) is the excitation of electrons from the valence band, and there are no restrictions on the irradiation direction, so it is emitted from above the multiple quantum well layer 3, which has the highest irradiation efficiency and facilitates device configuration. , for example, it may be irradiated at an angle close to perpendicular.
第３図は本発明の詳細な説明する図である。 FIG. 3 is a diagram explaining the present invention in detail.
図中、１はＣｒドープの５ｌ−ＧａＡｓ基板（比抵抗〜
１０６Ωｃｍの半絶縁基板）、２は第１のコンタクト層
で厚さ０．５μｍのｎ”−ＧａＡｓ層、３は多重量子井
戸層で厚さ６５人のｎ−ＧａＡｓを井戸層３１とし、厚
さ９５人のｎ ４１ ｏ、 ｚｓ Ｇａｓ、 ？ＳＡ３
を障壁層３２として、５０対をＭＢＥ法で形成した。In the figure, 1 is a Cr-doped 5l-GaAs substrate (specific resistance ~
106 Ωcm semi-insulating substrate), 2 is the first contact layer, which is an n''-GaAs layer with a thickness of 0.5 μm, and 3 is a multiple quantum well layer, which is a well layer 31 made of n-GaAs with a thickness of 65 μm. 95 n 41 o, zs Gas, ?SA3
were used as the barrier layer 32, and 50 pairs were formed by the MBE method.
４は第２のコンタクト層で厚さ０．５μｍのｎ＋−Ｇａ
Ａｓ層である。4 is a second contact layer made of n+-Ga with a thickness of 0.5 μm.
It is an As layer.
５は検知する信号光（ｈν、）の入射面で、基板１の面
に角度θでカットして研磨してあり、したがって、信号
光（ｈν、）は多重量子井戸層３の下側から斜めに入射
するようにした。６は励起光（ｈν、）の入射面で、励
起光（ｈｌｚＰ）は多重量子井戸層３の上方から、はり
垂直に照射するようにした。励起光（ｈν、）には０．
８μｍ帯の半導体レーザを使用した。Reference numeral 5 denotes the incident surface of the signal light (hν,) to be detected, which is cut and polished at an angle θ on the surface of the substrate 1. Therefore, the signal light (hν,) is incident at an angle from the bottom of the multiple quantum well layer 3. It was made to be input to . Reference numeral 6 denotes a plane of incidence of excitation light (hv, ), and the excitation light (hlzP) is irradiated vertically from above the multi-quantum well layer 3. The excitation light (hν, ) is 0.
An 8 μm band semiconductor laser was used.
７はは電圧印加手段で、電極？ａ、７ｂを通してＤＣＩ
ＯＶを印加し、信号光（ｈν、）により励起されたキャ
リア（電子）を外部に電流として取り出し、電気出力と
して検出するようにした。信号出力の検出は、１１μｍ
帯の光を試験信号光とじて用い、通常の半導体受光素子
の場合と同様に行った。7 is the voltage application means, and is it an electrode? DCI through a, 7b
OV was applied, and carriers (electrons) excited by the signal light (hv, ) were taken out as a current to the outside and detected as an electrical output. Signal output detection is 11μm
The test was carried out in the same manner as in the case of a normal semiconductor light-receiving element, using the band light as the test signal light.
以上の条件で、本実施例の半導体受光素子の試験信号光
による検出評価を行ったところ、所期の安定した高感度
特性が得られることを確認した。When the semiconductor light receiving element of this example was evaluated for detection using test signal light under the above conditions, it was confirmed that the expected stable high sensitivity characteristics could be obtained.
また、第４図は本発明の他の実施例を説明する図で、励
起光（ｈν、）入射面に半導体レーザ１００を密接して
設けたもので、受光素子全体をコンパクト、かつ、堅牢
に構成し信幀性を高めたものである。FIG. 4 is a diagram for explaining another embodiment of the present invention, in which a semiconductor laser 100 is provided closely to the excitation light (hν,) incident surface, making the entire light receiving element compact and robust. It has been constructed to improve credibility.
上記の実施例では、何れも単素子の構造について示した
が、基板上に多数の受光素子を並べて多素子型の受光デ
バイスを構成できることは勿論である。In the above embodiments, a single-element structure is shown, but it goes without saying that a multi-element type light-receiving device can be constructed by arranging a large number of light-receiving elements on a substrate.
なお、検出信号光の波長帯に応じて、多重量子井戸層を
形成する多重超格子の材料構成や、障壁層、井戸層それ
ぞれの厚さおよび層数など、本発明の趣旨に基づいて、
適宜選択できることは言うまでもない。Depending on the wavelength band of the detection signal light, the material composition of the multiple superlattice forming the multiple quantum well layer, the thickness and number of layers of the barrier layer and the well layer, etc. may be determined based on the spirit of the present invention.
It goes without saying that you can choose as appropriate.
また、本発明により、信号光を多重量子井戸層の端面、
すなわち、横方向から光ファイバ、あるいは、光ガイド
によって入射させるようにすれば、集積化された光回路
に適用できる。Further, according to the present invention, the signal light is transmitted to the end face of the multiple quantum well layer.
That is, it can be applied to integrated optical circuits if it is made to enter from the lateral direction through an optical fiber or a light guide.
以上述べたように、本発明によれば、信号光検出に用い
ている量子井戸内の電子の量子化準位間遷移に、全く影
響を与えることなく、励起光によって、価電子帯から量
子井戸内に、電子をボンピングして供給するので受光感
度の劣化がなくなり、半導体受光素子の性能向上に寄与
するところが極めて大きい。As described above, according to the present invention, excitation light can move the electrons from the valence band to the quantum well without affecting the transition between the quantization levels of electrons in the quantum well used for signal light detection. Since the electrons are pumped and supplied within the device, there is no deterioration in light-receiving sensitivity, which greatly contributes to improving the performance of semiconductor light-receiving elements.
素子の例を説明する図である。It is a figure explaining the example of an element.
図において、 １は基板、 ２は第１のコンタクト層、 ３は多重量子井戸層、 ４は第２のコンタクト層、 ５は信号光入射面、 ６は励起光入射面、 ７は外部電圧印加手段である。In the figure, 1 is the board, 2 is the first contact layer; 3 is a multiple quantum well layer, 4 is a second contact layer; 5 is a signal light incident surface; 6 is the excitation light incident surface, 7 is an external voltage applying means.
第１図は本発明の詳細な説明する間
第２図は本発明のキャリア励起方法による出力の時間変
化図、
第３図は本発明の詳細な説明する図、
第４図は本発明の他の実施例を説明する図、第５図は従
来の量子井戸層を存する半導体受光（イ） 素子ｉ！！
Ｔ面力Ｌｍ図
第２ 回
本発明のｐ哩と説Ｆ３Ａ−する圓
第１図FIG. 1 is a detailed explanation of the present invention, FIG. 2 is a time change diagram of the output by the carrier excitation method of the present invention, FIG. 3 is a detailed explanation of the present invention, and FIG. 4 is a diagram explaining the present invention in detail. FIG. 5 is a diagram illustrating an example of a conventional semiconductor light-receiving device (a) having a quantum well layer. !
T surface force Lm diagram 2nd P force and theory F3A of the present invention Figure 1
Claims (3)
２）と、 前記第１のコンタクト層（２）上に設けた多重量子井戸
層（３）と、 前記多重量子井戸層（３）上に設けた第２のコンタクト
層（４）と、 信号光入射面（５）と、 励起光入射面（６）と、 外部電圧印加手段（７）とを少なくとも備え、短波長の
励起光を前記多重量子井戸層（３）に照射して、価電子
帯から前記多重量子井戸層（３）内の量子化基底準位（
８）へ電子を励起し、長波長の信号光の入射時に前記量
子化基底準位から高い量子化準位へ励起されるキャリア
電子の供給を行うことを特徴とした半導体受光素子。(1) A semiconductor substrate (1) and a first contact layer (
2), a multiple quantum well layer (3) provided on the first contact layer (2), a second contact layer (4) provided on the multiple quantum well layer (3), and a signal light. It comprises at least an entrance surface (5), an excitation light entrance surface (6), and an external voltage application means (7), and irradiates the multiple quantum well layer (3) with short wavelength excitation light to generate a valence band. from the quantized basis level in the multi-quantum well layer (3) (
8) A semiconductor light-receiving element, characterized in that carrier electrons are excited from the quantization base level to a higher quantization level upon incidence of long-wavelength signal light.
て照射することを特徴とした請求項（１）記載の半導体
受光素子。(2) The semiconductor light-receiving device according to claim (1), wherein the excitation light is emitted as pulsed light synchronized with the signal light.
から照射し、前記信号光を前記多重量子井戸層（３）の
横または斜め方向から入射させることを特徴とした請求
項（１）または（２）記載の半導体受光素子。(3) The excitation light is irradiated from above the surface of the multiple quantum well layer (3), and the signal light is incident on the multiple quantum well layer (3) from a side or an oblique direction. 1) or (2) the semiconductor light-receiving device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1062801A JPH02241064A (en) | 1989-03-15 | 1989-03-15 | Semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1062801A JPH02241064A (en) | 1989-03-15 | 1989-03-15 | Semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02241064A true JPH02241064A (en) | 1990-09-25 |
Family
ID=13210807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1062801A Pending JPH02241064A (en) | 1989-03-15 | 1989-03-15 | Semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02241064A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6054718A (en) * | 1998-03-31 | 2000-04-25 | Lockheed Martin Corporation | Quantum well infrared photocathode having negative electron affinity surface |
| US6445000B1 (en) | 1999-07-30 | 2002-09-03 | Fujitsu Limited | Photodetecting device |
| JP2008187022A (en) * | 2007-01-30 | 2008-08-14 | Fujitsu Ltd | Infrared ray detector |
| WO2011018984A1 (en) * | 2009-08-10 | 2011-02-17 | 国立大学法人千葉大学 | Photoelectric conversion device |
-
1989
- 1989-03-15 JP JP1062801A patent/JPH02241064A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6054718A (en) * | 1998-03-31 | 2000-04-25 | Lockheed Martin Corporation | Quantum well infrared photocathode having negative electron affinity surface |
| US6445000B1 (en) | 1999-07-30 | 2002-09-03 | Fujitsu Limited | Photodetecting device |
| JP2008187022A (en) * | 2007-01-30 | 2008-08-14 | Fujitsu Ltd | Infrared ray detector |
| WO2011018984A1 (en) * | 2009-08-10 | 2011-02-17 | 国立大学法人千葉大学 | Photoelectric conversion device |
| JP5424503B2 (en) * | 2009-08-10 | 2014-02-26 | 国立大学法人 千葉大学 | Photoelectric conversion device |
| JP2014060432A (en) * | 2009-08-10 | 2014-04-03 | Chiba Univ | Photoelectric conversion device |
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