JPH02238679A - Full color light emitting device - Google Patents
Full color light emitting deviceInfo
- Publication number
- JPH02238679A JPH02238679A JP1059155A JP5915589A JPH02238679A JP H02238679 A JPH02238679 A JP H02238679A JP 1059155 A JP1059155 A JP 1059155A JP 5915589 A JP5915589 A JP 5915589A JP H02238679 A JPH02238679 A JP H02238679A
- Authority
- JP
- Japan
- Prior art keywords
- led
- pellet
- light emitting
- emitting device
- color light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000008188 pellet Substances 0.000 claims abstract description 51
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000000465 moulding Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000003086 colorant Substances 0.000 abstract description 5
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 2
- 235000007575 Calluna vulgaris Nutrition 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は赤色Ｌ Ｅ Ｄペレットと、緑色ＬＥＤペレッ
トと、青色ＬＥＤペレットとを一体的にモルドしたフル
カラー発光装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a full-color light emitting device in which red LED pellets, green LED pellets, and blue LED pellets are integrally molded.
（口）従来の技術
Ｌ Ｅ Ｄは白熱電球などに比べて信頼性が極めて高い
ことから，各種電子機器のパイロットランプを始めとし
て各分野において多用されている。(Explanation) Conventional LED technology has extremely high reliability compared to incandescent light bulbs, so it is widely used in various fields including pilot lamps for various electronic devices.
方、Ｌ Ｅ Ｄの発光色としては、ＧａＰやＧａＡＩＡ
ｓなどのＧａ系化合物半導体を用いた赤色と緑色、及び
ＳｉＣを用いた青色の３色に大別される。そしてこれら
の３色を組み合わせることによってフルカラーの発光装
置が形成されることは原理的には良く知られているとこ
ろである。On the other hand, the emission color of LED is GaP or GaAIA.
It is roughly divided into three colors: red and green using Ga-based compound semiconductors such as s, and blue using SiC. It is well known in principle that a full-color light emitting device can be formed by combining these three colors.
（ハ）発明が解決しようとする課題
ところがＧａＰやＧａＡＩＡｓを用いた赤色と緑色Ｌ
Ｅ Ｄの発光輝度は比較的高く、２０〜３０＋ｎＣｄ稈
度であるが、ＳｉＣを用いた青色Ｌ Ｅ Ｄの輝度は１
２ｍｃｄ稈度と赤色ＬＥＤや緑色ＬＥＤに比べて格段に
低く、これ程輝度に差があるＬ Ｅ Ｄ同士を絹み合わ
せてもフルカラー発光をさせることはできない。(c) The problem to be solved by the invention is red and green L using GaP and GaAIAs.
The luminance of ED is relatively high, with a culm of 20-30+nCd, but the luminance of blue LED using SiC is 1
The 2mcd culmness is much lower than that of red or green LEDs, and even if LEDs with such a difference in brightness are combined together, it will not be possible to emit full color light.
またＧａＰやＧａＡＩＡｓを用いた赤色ＬＥＤ、緑色Ｌ
Ｅ Ｄのペレソトの厚みは通常、３００ＩＩｍ程度で
あり、一方、ＳｉＣを用いた青色ＬＥＤのそノ主ま約１
００ｑｍと両者の間には２００１＋ｍの差があって、こ
れらを単一表面を持つヘノダーに固着した場合、各ペレ
ットからの発光位置が異なることがらそれぞれの発光色
の合成が均−に行われず、混色不良現象が見られた。Also, red LEDs using GaP and GaAIAs, green L
The thickness of an ED plate is usually about 300 IIm, while the thickness of a blue LED using SiC is about 1 m.
There is a difference of 2001+m between the two, and when these are fixed to a henoder with a single surface, the light emission position from each pellet is different, so the synthesis of each emission color is not performed evenly. A phenomenon of poor color mixing was observed.
（二）課題を解決するための手段
本発明はこのような課題を解決するために為された乙の
であって、ＳｉＣがら成る青色Ｌ Ｅ Ｄペレットの数
をＧａ系化合物半導体から成る赤色ＬＥ Ｉ）や緑色１
− Ｅ Ｄペレットの数より多くすると共に、これらの
各Ｌ Ｅ Ｄペレッ｝・の表面高さを略同に設定するも
のである。(2) Means for Solving the Problems The present invention has been made to solve such problems, and it is possible to reduce the number of blue LED pellets made of SiC to the red LED pellets made of Ga-based compound semiconductors. ) and green 1
- The number of LED pellets is set to be greater than the number of LED pellets, and the surface height of each of these LED pellets is set to be approximately the same.
（ホ）作用
本発明によれば、各色のＬＥＤの発光輝度のバラツキを
補えると共に、各ＬＥＤからの発光色の混合不良が解消
される。(E) Function According to the present invention, it is possible to compensate for variations in the luminance of light emitted from the LEDs of each color, and to eliminate poor mixing of the colors of light emitted from the respective LEDs.
（へり実施例
第１図は本発明の基本構成を示す斜視図であって、（１
）はヘッダーで、その中央部に、ＧａＰやＧａＡＩＰを
用いた赤色ＬＥＤペレット（２）と緑色Ｌ Ｅ Ｄペレ
ソト（３）とが並設固着されている。こノしらのＬＥＤ
ペレット（２ ）（３ ）は３００ｐｍ程度の１１７み
を有し、またその大きさも約３００μｍ角である。（４
）はこれらのＬＥＤペレット（２ ）（３ ）に近接し
て配置された高さ調節用ブロック体であって、このブロ
ック体（４）の上にＳｉＣから成る２涸の青色ＬＥＤペ
レゾ｝ （５ ）（５ ）が固着されている。通常Ｓｉ
Ｃから構成された青色ＬＥＤペレノ１・は１００μｍ程
度の厚みであるので、青色ＬＥＤペレ７｝（５）（５）
の表面高さと、赤色、緑色ＬＥｒ）ペレ７ト（２）（３
）のそれとを同じにするべく、二の高さ調節用ブロック
体く・１）の厚みは２００ｌＩｍ程度に設定されている
。この高さ調節用ブロックｒ杢（１）は３００Ｘ７００
ｍｍ程度の大きさのセラミｌクス、或るいはガラスから
構成され、その表裏両面にはＡ ｕ／ Ｐ ｄ／Ｔ ｉ
膜が蒸着されていて、この蒸着膜によってこの高さ調節
用ブロック体（４）かへ・ｌダー（１）に固着されると
共に、青色ＬＥＤベレ・ノト（５）（５）が高さ調節用
ブロック体（４）上に固着される。この高さ調節用ブロ
ック体（４）の１叫Ａ的は上記したように赤色、緑色Ｌ
ＥＤペレット（２ ）（３ ）と青色ＬＥＤペレット（
５）との高さ調節であるが、それ以外に赤色ＬＥＤペレ
ット（２）と緑色Ｌ Ｅ Ｄペレット（３）からの発光
を側面に散乱させずに正面側に向かわせる集光体の役目
も果たす。従って赤色Ｌ Ｅ Ｄペレット（２）と緑色
ＬＥ■）ペレ７｝（３）との近接して固着された調節用
ブロック体（１）の対称位置に該ブロック体（４）と同
形状、同素材の第２のブロック体（６）を固着すると共
に、この両ブロック体（４ ）（６ ）が存在しない側
面にも同素材の第３、第４のブロック体（７）（７）が
固着されていて赤色ＬＥＤペレット（２）と緑色Ｌ Ｅ
Ｄペレｙ｝（３）からの発光光は正面側に効率よく導
かれる。（８） は各ＬＥＤペレソト（２ ）（３ ）
（５ ）をヘッダ−（１）の各外部導出ピン（９） に
電気接続するためのボンデイングワイヤー、（１０）は
高さ調節用ブロノク体（４）の表面のＡｕ／ Ｐ ｄ／
Ｔ ｉ膜をヘノダー（１）に接続するためのボンディン
グワイヤーである。(Embodiment FIG. 1 is a perspective view showing the basic configuration of the present invention.
) is a header, in the center of which a red LED pellet (2) using GaP or GaAIP and a green LED pellet (3) are fixed in parallel. Konoshira's LED
The pellets (2) and (3) have a diameter of about 300 pm and a size of about 300 μm square. (4
) is a height adjustment block placed close to these LED pellets (2) and (3), and on top of this block (4) are two blue LED pellets made of SiC} (5). )(5) is fixed. Normally Si
Since the blue LED Pelleno 1 composed of C has a thickness of about 100 μm, the blue LED Pelleno 7} (5) (5)
The surface height of the red and green LEr) pellets (2) (3
), the thickness of the second height adjustment block body (1) is set to about 200lIm. This height adjustment block r heather (1) is 300X700
It is made of ceramic or glass with a size of about mm, and has A u / P d / Ti on both the front and back sides.
A film is deposited, and this vapor-deposited film fixes the height adjustment block body (4) to the head/lender (1), and also allows the height adjustment of the blue LED beret (5) (5). It is fixed on the block body (4). As mentioned above, the height adjustment block body (4) has red and green L.
ED pellets (2) (3) and blue LED pellets (
5), but it also serves as a condenser to direct the light emitted from the red LED pellet (2) and green LED pellet (3) toward the front without scattering it to the sides. Fulfill. Therefore, in the symmetrical position of the adjustment block body (1) fixed close to the red LED pellet (2) and the green LED pellet 7} (3), there is a plate having the same shape and the same shape as the block body (4). The second block body (6) of the material is fixed, and the third and fourth block bodies (7) (7) of the same material are fixed to the sides where both the block bodies (4) and (6) are not present. There are red LED pellets (2) and green LED pellets (2)
The emitted light from D Perey} (3) is efficiently guided to the front side. (8) is each LED peresoto (2) (3)
Bonding wire (10) is for electrically connecting (5) to each external lead-out pin (9) of the header (1), and (10) is Au/Pd/
This is a bonding wire for connecting the Ti film to the henoder (1).
このように組み立てられたヘソグーの表面を僅かに光散
乱剤が混入された透明抗｛詣で被い、フルカラー発光装
置を完成する。The surface of the hesogoo assembled in this way is covered with a transparent film containing a slight amount of light-scattering agent to complete a full-color light emitting device.
尚、冒頭にも述べたように赤色、及び緑色ＬＥＩ〕の発
光輝度は５〜１０ｍＡの電流を流すことによって２０〜
３０ｍＣｄであり、また青色ＬＥＤは２０ｍＡの電流を
流して１２ｍＣｄの発光輝度を持つ。従って２個の青色
ＬＥＤを用いることによって各Ｌ Ｅ Ｄの発光輝度が
揃う。そして各色のＬＥ１）の発光状態を組み合わせる
ことによって所望の色を発光させることができる。例え
ば赤色ＬＥＤとＨ色Ｌ Ｅ Ｄとを点灯させると紫色が
発光し、また赤色ＬＥＤと緑色ＬＥＤとを点灯させるこ
とによって黄色を得ることができる。As mentioned at the beginning, the luminance of the red and green LEIs can be increased by 20 to 20 mA by flowing a current of 5 to 10 mA.
30 mCd, and the blue LED has a luminance of 12 mCd when a current of 20 mA flows. Therefore, by using two blue LEDs, the luminance of each LED can be made uniform. By combining the light emitting states of LE1) of each color, a desired color can be emitted. For example, when a red LED and a H-color LED are turned on, purple light is emitted, and when a red LED and a green LED are turned on, a yellow color can be obtained.
第２図は本発明の他の実施例を示しており、第１図の実
施例と大きく異なっているところは、へ／ダー（１）の
構成にある。即ちこの実施例においては、ヘノダー（１
）の中央部に深さ約２００ｌＩｍの段差を持つ凹み（１
１）が設けられていて、この凹．み（１］）内に赤色Ｌ
ＥＤ（２）と緑色ＬＥＤ（３）とが固着され、凹み（１
１）の外周の上段側に２個の青色１．． Ｅ Ｄ （５
）（５ ）が固着されている。FIG. 2 shows another embodiment of the present invention, which differs greatly from the embodiment shown in FIG. 1 in the structure of the header (1). That is, in this example, henodar (1
) with a step approximately 200 lIm deep in the center (1
1) is provided, and this recess. Red L inside (1)
The ED (2) and the green LED (3) are fixed, and the recess (1
There are two blue pieces on the upper side of the outer circumference of 1). ．． E D (5
)(5) is fixed.
この第２の実施例においても各ＬＥＤの発光高さ位置が
略同一とすることができると共に、赤色１． Ｆ Ｄと
緑色ＬＥＤとからの発光が側面に散乱することなく正面
側からの混合発光に有効に用いらノＬ る 。In this second embodiment as well, the light emitting height positions of the respective LEDs can be made substantially the same, and the red 1. The light emitted from the FD and the green LED is not scattered to the side, and can be effectively used for mixed light emission from the front side.
尚、上記した各実施例においては、各色のＬＥＩ〕ペレ
ットの表面高さを略同一にしているが、各ベレットの発
光現象に直接寄与するＰＮ接合面を同じ高さにすること
でも同じ効果が得られる。In each of the above-mentioned examples, the surface heights of the LEI pellets of each color are made approximately the same, but the same effect can also be obtained by making the PN junction surfaces of each pellet, which directly contribute to the light emission phenomenon, to the same height. can get.
（ト）発明の効果
本発明は以上の説明から明らかなように、発光輝度が弱
い青色ＬＥＤｏ数を赤色ＬＥＤや緑色Ｉ７Ｅ Ｄの数よ
り多くしているので各色の発光輝度が近似したらのとな
ってフルカラー発光が可能となる。また本発明において
は赤色ＬＥＤ、緑色ＬＥＤ及び青色１．． Ｅ Ｄの各
ペレットの表面高さを同じに設定しているので、各Ｌ
Ｅ Ｄからの発光光の合成が均一の行われ、良好な混色
を得ることができる。(G) Effects of the Invention As is clear from the above explanation, the present invention has a larger number of blue LEDs with weak luminance than red LEDs and green I7EDs, so that when the luminance of each color is approximated, Full color light emission is possible. Further, in the present invention, a red LED, a green LED, and a blue LED are used. ．． Since the surface height of each pellet of E and D is set to be the same, each L
The light emitted from the ED is uniformly combined, and a good color mixture can be obtained.
第１図は本発明の構成を示す斜視図、第２図は本発明の
他の実施例の斜視図である。FIG. 1 is a perspective view showing the structure of the present invention, and FIG. 2 is a perspective view of another embodiment of the invention.
Claims (7)
と、Ｇａ系化合物半導体から成る緑色ＬＥＤペレットと
、ＳｉＣから成る青色ＬＥＤペレットとを一体的にモー
ルドしたフルカラー発光装置において、青色ＬＥＤの数
を赤色ＬＥＤ及び緑色ＬＥＤの数より多くしたことを特
徴とするフルカラー発光装置。(1) In a full-color light emitting device in which a red LED pellet made of a Ga-based compound semiconductor, a green LED pellet made of a Ga-based compound semiconductor, and a blue LED pellet made of SiC are integrally molded, the number of blue LEDs is equal to the number of red LEDs. and a full color light emitting device characterized in that the number is greater than the number of green LEDs.
あり、青色ＬＥＤは２個であることを特徴とした請求項
第１項記載のフルカラー発光装置。(2) The full color light emitting device according to claim 1, wherein the number of the red LED and the green LED is one each, and the number of the blue LED is two.
と、Ｇａ系化合物半導体から成る緑色ＬＥＤペレットと
、ＳｉＣから成る青色ＬＥＤペレットとを一体的にモー
ルドして成るフルカラー発光装置において、各色のＬＥ
Ｄペレットの表面高さを略同一に設定したことを特徴と
したフルカラー発光装置。(3) In a full-color light emitting device formed by integrally molding a red LED pellet made of a Ga-based compound semiconductor, a green LED pellet made of a Ga-based compound semiconductor, and a blue LED pellet made of SiC, each color of LE
A full-color light-emitting device characterized in that the surface heights of the D pellets are set to be approximately the same.
はヘッダーに直接固着され、上記青色ＬＥＤは、上記赤
色ＬＥＤペレット並びに緑色ＬＥＤペレットの高さと、
上記青色ＬＥＤの高さとの差に相当する高さを有する高
さ調節用ブロック体を介してヘッダーに固着されている
ことを特徴とした請求項第３項記載のフルカラー発光装
置。(4) The red LED pellet and the green LED pellet are directly fixed to the header, and the blue LED has a height that is equal to the height of the red LED pellet and the green LED pellet.
4. The full color light emitting device according to claim 3, wherein the full color light emitting device is fixed to the header via a height adjusting block having a height corresponding to the difference in height from the height of the blue LED.
トと緑色ＬＥＤペレットとを取り囲むように配置されて
いることを特徴とした請求項第４項記載のフルカラー発
光装置。(5) The full color light emitting device according to claim 4, wherein the height adjusting block body is arranged so as to surround the red LED pellet and the green LED pellet.
トの高さと、上記青色ＬＥＤの高さとの差に相当する段
差を有するヘッダーを備え、上記赤色ＬＥＤペレットと
緑色ＬＥＤペレットとはヘッダーの下段に固着され、上
記青色ＬＥＤはヘッダーの上段に固着されていることを
特徴とした請求項第３項記載のフルカラー発光装置。(6) a header having a step corresponding to the difference in height between the red LED pellet and green LED pellet and the height of the blue LED; the red LED pellet and the green LED pellet are fixed to the lower stage of the header; 4. The full color light emitting device according to claim 3, wherein the blue LED is fixed to the upper stage of the header.
されていることを特徴とした請求項第６項記載のフルカ
ラー発光装置。(7) The full-color light emitting device according to claim 6, wherein the header is configured such that the central portion is low and the peripheral portion is high.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5915589A JPH0691285B2 (en) | 1989-03-10 | 1989-03-10 | Full color light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5915589A JPH0691285B2 (en) | 1989-03-10 | 1989-03-10 | Full color light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02238679A true JPH02238679A (en) | 1990-09-20 |
| JPH0691285B2 JPH0691285B2 (en) | 1994-11-14 |
Family
ID=13105187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5915589A Expired - Fee Related JPH0691285B2 (en) | 1989-03-10 | 1989-03-10 | Full color light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0691285B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5266817A (en) * | 1992-05-18 | 1993-11-30 | Lin Paul Y S | Package structure of multi-chip light emitting diode |
| JPH0595064U (en) * | 1992-05-13 | 1993-12-24 | タイワン・リトン・エレクトロニック・カンパニー・リミテッド | Light emitting diode |
| US5324962A (en) * | 1991-06-13 | 1994-06-28 | Kabushiki Kaisha Toshiba | Multi-color semiconductor light emitting device |
| US5371384A (en) * | 1993-06-24 | 1994-12-06 | Sony Corporation | Solid state imaging device having a light emitting diode |
| US7385574B1 (en) | 1995-12-29 | 2008-06-10 | Cree, Inc. | True color flat panel display module |
| US8017955B2 (en) | 2004-11-19 | 2011-09-13 | Koninklijke Philips Electronics N.V. | Composite LED modules |
| CN110649008A (en) * | 2019-09-17 | 2020-01-03 | 天津宝坻紫荆创新研究院 | High-color-rendering LED and production method thereof |
| JP2020004978A (en) * | 2014-12-19 | 2020-01-09 | グロ アーベーＧｌｏ Ａｂ | Method of forming light emission diode array on back plane |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5124860U (en) * | 1974-08-12 | 1976-02-24 | ||
| JPS58191657U (en) * | 1982-06-15 | 1983-12-20 | 三洋電機株式会社 | Multicolor light emitting element drive circuit |
| JPS6076049U (en) * | 1983-10-31 | 1985-05-28 | 日本電気株式会社 | Composite light emitting diode |
| JPH01265661A (en) * | 1988-04-15 | 1989-10-23 | Seiko Epson Corp | Solid-state image pickup device |
-
1989
- 1989-03-10 JP JP5915589A patent/JPH0691285B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5124860U (en) * | 1974-08-12 | 1976-02-24 | ||
| JPS58191657U (en) * | 1982-06-15 | 1983-12-20 | 三洋電機株式会社 | Multicolor light emitting element drive circuit |
| JPS6076049U (en) * | 1983-10-31 | 1985-05-28 | 日本電気株式会社 | Composite light emitting diode |
| JPH01265661A (en) * | 1988-04-15 | 1989-10-23 | Seiko Epson Corp | Solid-state image pickup device |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5324962A (en) * | 1991-06-13 | 1994-06-28 | Kabushiki Kaisha Toshiba | Multi-color semiconductor light emitting device |
| US5491349A (en) * | 1991-06-13 | 1996-02-13 | Kabushiki Kaisha Toshiba | Multi-color light emitting device |
| JPH0595064U (en) * | 1992-05-13 | 1993-12-24 | タイワン・リトン・エレクトロニック・カンパニー・リミテッド | Light emitting diode |
| US5266817A (en) * | 1992-05-18 | 1993-11-30 | Lin Paul Y S | Package structure of multi-chip light emitting diode |
| US5371384A (en) * | 1993-06-24 | 1994-12-06 | Sony Corporation | Solid state imaging device having a light emitting diode |
| US7385574B1 (en) | 1995-12-29 | 2008-06-10 | Cree, Inc. | True color flat panel display module |
| US8766885B2 (en) | 1995-12-29 | 2014-07-01 | Cree, Inc. | True color flat panel display module |
| US8017955B2 (en) | 2004-11-19 | 2011-09-13 | Koninklijke Philips Electronics N.V. | Composite LED modules |
| JP2020004978A (en) * | 2014-12-19 | 2020-01-09 | グロ アーベーＧｌｏ Ａｂ | Method of forming light emission diode array on back plane |
| CN110649008A (en) * | 2019-09-17 | 2020-01-03 | 天津宝坻紫荆创新研究院 | High-color-rendering LED and production method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0691285B2 (en) | 1994-11-14 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |