JPH02227408A - Flattening material - Google Patents
Flattening materialInfo
- Publication number
- JPH02227408A JPH02227408A JP4929189A JP4929189A JPH02227408A JP H02227408 A JPH02227408 A JP H02227408A JP 4929189 A JP4929189 A JP 4929189A JP 4929189 A JP4929189 A JP 4929189A JP H02227408 A JPH02227408 A JP H02227408A
- Authority
- JP
- Japan
- Prior art keywords
- organic polymer
- molecular weight
- group
- phenylene
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 17
- 229920000620 organic polymer Polymers 0.000 claims abstract description 13
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims abstract description 8
- 238000009826 distribution Methods 0.000 claims abstract description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 5
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- 125000003118 aryl group Chemical group 0.000 claims abstract description 4
- 239000000155 melt Substances 0.000 claims description 5
- 239000013256 coordination polymer Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 19
- 239000004020 conductor Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 abstract 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 14
- 229920001577 copolymer Polymers 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 125000001989 1,3-phenylene group Chemical group [H]C1=C([H])C([*:1])=C([H])C([*:2])=C1[H] 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- -1 triphenylsilyl group Chemical group 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- 125000004200 2-methoxyethyl group Chemical group [H]C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 101100323029 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) alc-1 gene Proteins 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- URXNVXOMQQCBHS-UHFFFAOYSA-N naphthalene;sodium Chemical compound [Na].C1=CC=CC2=CC=CC=C21 URXNVXOMQQCBHS-UHFFFAOYSA-N 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は凹凸を有する基板の平坦化材料に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a material for planarizing a substrate having irregularities.
［従来の技術］
半導体集積回路素子あるいはバルブメモリ素子等の超小
型素子においては絶縁体と導体層とを順次積層形成する
ことが必要とされている。[Prior Art] In ultra-small devices such as semiconductor integrated circuit devices or valve memory devices, it is necessary to sequentially laminate insulators and conductor layers.
しかしながら、導体層数が２層、３層と多層化するに従
い導体層の段差がより急峻となり、導体層が交叉すると
ころで断線やショート等を生じ、実質的な積層構成を困
難にしている。However, as the number of conductor layers increases to two or three, the height difference between the conductor layers becomes steeper, and disconnections or short circuits occur where the conductor layers intersect, making it difficult to form a substantial laminated structure.
上述した導体層の断線を防止するためには、導体層を形
成する前の絶縁層表面を平坦化することが有効である。In order to prevent the above-described disconnection of the conductor layer, it is effective to flatten the surface of the insulating layer before forming the conductor layer.
これに対して、従来フォトレジストやポリイミドを用い
たエッチバック法が知られているが、段差幅が数μｍ程
度で平坦化が不十分になり、５０μｍ程度でほとんど平
坦化できない。On the other hand, an etch-back method using photoresist or polyimide is conventionally known, but flattening becomes insufficient when the step width is about several μm, and almost impossible when the step width is about 50 μm.
これを改善するために、分子量１０００、分子量分布（
Ｍｗ／Ｍｎ）１．２程度のクロロメチル化ポリスチレン
のごとき、熱変形温度の低い材料を回転塗布後、熱変形
温度以上（たとえば２００℃）に加熱して流動し平坦化
した有機樹脂面を得た後、紫外線硬化しドライエツチン
グにより５０μｍ以上の幅の段差にわたって絶縁層の理
想的な平坦面を得る方法がある（特願昭６ｌ−１２６５
９３）。In order to improve this, the molecular weight is 1000, the molecular weight distribution (
After spin-coating a material with a low heat distortion temperature, such as chloromethylated polystyrene with a Mw/Mn) of about 1.2, it is heated above the heat distortion temperature (for example, 200°C) to obtain a fluidized and flattened organic resin surface. After that, there is a method of obtaining an ideal flat surface of the insulating layer over a step width of 50 μm or more by curing with ultraviolet rays and dry etching (Japanese Patent Application No. 61-1265).
93).
［発明が解決し、ようとする課題］
しかしながら、この方法は、フォトレジストやポリイミ
ドを用いたエッチバック法と比較して、紫外線硬化工程
が増え、プロセスが煩雑になり生産性に劣るという問題
があった。[Problems to be solved and attempted by the invention] However, compared to the etch-back method using photoresist or polyimide, this method has the problem of increasing the number of ultraviolet curing steps, making the process complicated, and lowering productivity. there were.
本発明の目的は、前記方法における紫外線硬化工程を省
略することにより、プロセスの煩雑性を軽減し生産性を
改善できる平坦化材料を提供することにある。An object of the present invention is to provide a flattened material that can reduce the complexity of the process and improve productivity by omitting the ultraviolet curing step in the method.
［課題を解決するための手段］
すなわち本発明の平坦化材料は、
一般式：
（式中、Ｒ１、Ｒ２、Ｒ：ｌは、水素原子、メチル基ま
たはフェニレン基、Ｒｆｉ、Ｒ６はアルキル基、芳香族
基、 置換シリル基、Ａｒはフェニレン基、Ｘは、０
〜２の整数、旗ま１以上の整数、霜よ０または１以上の
整数を表す。）で示され、２００℃で５０００ＣＰ以下
の溶融粘度を有する有機高分子からなる平坦化材料であ
る。[Means for Solving the Problems] That is, the planarizing material of the present invention has the general formula: (wherein R1, R2, R:l are hydrogen atoms, methyl groups or phenylene groups, Rfi and R6 are alkyl groups, Aromatic group, substituted silyl group, Ar is phenylene group, X is 0
It represents an integer between ~2, an integer of 1 or more, and an integer of 0 or 1 or more. ) and is a flattening material made of an organic polymer and having a melt viscosity of 5000 CP or less at 200°C.
Ｒ１、Ｒ２およびＲ３のハロゲン原子としては、塩素原
子、フッ素原子、ヨウ素原子または臭素原子であり、Ｒ
１、Ｒ２およびＲ３の好ましいものは水素原子およびメ
チル基である。Ｒ４のフェニレン基としては、０−フェ
ニレン基、ｍ−フェニレン基またはｐ−フェニレン基で
あり、Ｒ４の好ましいものは、ｍ−フェニレン基および
ｐ−フェニレン基である。Ｒ５お・よびＲ６のアルキル
基としては、メチル基、エチル基、イソプロピル基、タ
ーシャルブチル基または２−メトキシエチル基であり、
芳香族基と換シリル基としては、トリメチルシリル基、
Ｉ・リエチルシリル基またはトリフェニルシリル基であ
り、好ましものは、イソプロピル基、フェニル基または
トリメチルシリル基である。Ａｒのフェニレン基として
は、０−・フェニレン、ｍ−フェニレンおよびＰ−フェ
ニレン基である。Ｘについてば、好ましくは、２である
。 ｍＸｎについては、通常ｍはＯ〜１００、ｎは１
〜５０であり、好ましくは、ｍは５〜１５であり、ｎは
１〜５である。ｍとｎの比は通常’ ９９ ： １〜５
０ ： ５０であり、好ましくは９５：５〜６０ ：
４０である。The halogen atom of R1, R2 and R3 is a chlorine atom, a fluorine atom, an iodine atom or a bromine atom, and R
1, R2 and R3 are preferably a hydrogen atom or a methyl group. The phenylene group for R4 is 0-phenylene group, m-phenylene group or p-phenylene group, and preferred ones for R4 are m-phenylene group and p-phenylene group. The alkyl group of R5 and R6 is a methyl group, ethyl group, isopropyl group, tertiary butyl group or 2-methoxyethyl group,
As aromatic groups and substituted silyl groups, trimethylsilyl groups,
I.ethylsilyl group or triphenylsilyl group, and preferred is isopropyl group, phenyl group or trimethylsilyl group. The phenylene group of Ar is 0-phenylene, m-phenylene and P-phenylene. Regarding X, preferably it is 2. Regarding mXn, usually m is O~100 and n is 1
-50, preferably m is 5-15 and n is 1-5. The ratio of m and n is usually '99: 1 to 5.
0:50, preferably 95:5-60:
It is 40.
ｎの比率が１未満であると、熱硬化性が不十分になり、
５０を越えると熱硬化時の収縮が大きくなり平坦化性が
悪くなる。If the ratio of n is less than 1, the thermosetting property will be insufficient,
When it exceeds 50, shrinkage during heat curing increases and flattening properties deteriorate.
一般式（１）で示される高分子の２００℃での溶融粘度
、通常１〜５０００ＣＰテあり、好ましくハ１〜５ｏｏ
ｃＰである。５０００ＣＰを越えると段差幅が５０μｍ
以下であっても、高低差が１０００Å以下の理想的な平
坦面を得られにくくなる。The melt viscosity at 200°C of the polymer represented by general formula (1) is usually 1 to 5000 CP, preferably 1 to 500 CP.
It is cP. If it exceeds 5000CP, the step width will be 50μm.
Even if the height difference is less than 1000 Å, it becomes difficult to obtain an ideal flat surface with a height difference of 1000 Å or less.
一般式（１）で示される高分子の重量平均分子量は、通
常５００〜１ｏｏｏｏであり好ましくは５００〜１５０
０である。重量平均分子量が５００未満であれば、高分
子は常温でも流動体になる傾向があり、塗布時のスピン
回転時間が長くなるほど膜厚が薄くなり膜厚の制御が難
しい。また、重量平均分子量が１００００を越えると、
２００℃での溶融粘度が高くなり、理想的な平坦面を得
られにくくなる。分子量分布（ＭＷ／ＭＮ）は、普通の
重合方法で得られる重合体では１．０〜４．０程度であ
り、通常の使用には使えるが、流動化する温度範囲を狭
くし溶融粘度を低くするには１．５未満が好ましい。The weight average molecular weight of the polymer represented by general formula (1) is usually 500 to 1oooo, preferably 500 to 150.
It is 0. If the weight average molecular weight is less than 500, the polymer tends to become a fluid even at room temperature, and the longer the spin rotation time during coating, the thinner the film becomes, making it difficult to control the film thickness. In addition, when the weight average molecular weight exceeds 10,000,
The melt viscosity at 200° C. increases, making it difficult to obtain an ideal flat surface. The molecular weight distribution (MW/MN) is about 1.0 to 4.0 for polymers obtained by ordinary polymerization methods, and although they can be used for normal use, it is necessary to narrow the temperature range for fluidization and lower the melt viscosity. In order to do so, it is preferably less than 1.5.
一般式（１）で示される高分子の具体例としては、スチ
レン（ｍ＝８）−ｐ−（トリイソプロピルオキシシリル
）スチレン（ｎ＝２）共重合体、スチレン（ｍ＝８）−
ｐ−（トリフェニルオキシシリル）スチレン（ｎ＝２）
共重合体、スチレン（ｍ＝８）−２−トリイソプロピル
オキシシリルエチルアクリレート（ｎ＝２）共重合体、
スチレン（ｍ＝８） −２−トリイソプロピルオキシシ
リル王チルメタクリレート（ｎ＝２）共重合体などが挙
げられる。Specific examples of the polymer represented by general formula (1) include styrene (m=8)-p-(triisopropyloxysilyl)styrene (n=2) copolymer, styrene (m=8)-
p-(triphenyloxysilyl)styrene (n=2)
copolymer, styrene (m=8)-2-triisopropyloxysilylethyl acrylate (n=2) copolymer,
Examples include styrene (m=8)-2-triisopropyloxysilyl kingyl methacrylate (n=2) copolymer.
一般式（１）で示される高分子の合成方法としては、Ｂ
Ｆ３−Ｅｔｚ○、ＡｌＣ１，、ＴｉＣｌ４などのルイス
酸やＨ２Ｓ ０４、ＨＣｌＯ４、ＣＦ、Ｃ０ＯＨ，Ｐ−
トルエンスルホン酸などのプロトン酸によるカチオン重
合法、ブチルリチウム、ナトリウム−ナフタレン錯体な
どによるアニオン重合法またはベンゾイルパーオキサイ
ド、ジクミルパーオキ゛サイド、アゾビスイソブチロニ
トリルなどのラジカル開始剤によるラジカル重合法など
がある。As a method for synthesizing the polymer represented by general formula (1), B
Lewis acids such as F3-Etz○, AlC1, TiCl4, H2S 04, HClO4, CF, C0OH, P-
Cationic polymerization method using protonic acids such as toluenesulfonic acid, anionic polymerization method using butyl lithium, sodium-naphthalene complex, etc., or radical polymerization method using radical initiators such as benzoyl peroxide, dicumyl peroxide, azobisisobutyronitrile, etc. and so on.
本発明の平坦化材料は、一般式（１）で示される有機高
分子を芳香族炭化水素（トルエン、キシレンなど）、エ
ステル化合物（酢酸エチルセロソルブなど）などに溶解
して使用する状態となる。この場合の固形物濃度は重量
基準で通常１０〜６０％である。The planarization material of the present invention is used by dissolving the organic polymer represented by the general formula (1) in an aromatic hydrocarbon (toluene, xylene, etc.), an ester compound (ethyl cellosolve acetate, etc.), or the like. The solids concentration in this case is usually 10 to 60% by weight.
本発明の平坦化材料の使用方法は、以下の通りである。The method of using the planarizing material of the present invention is as follows.
まず、段差を有する絶縁膜基板上に一般式（１）で示さ
れる、有機高分子をスピン塗布法、スプレー塗布法など
により膜厚０．１〜１０μｍとなるように塗布する。続
いて、該有機高分子膜を赤外線ランプ、ホットプレート
、クリーンオーブンなどにより１００〜２００℃で加熱
し、溶融流動させ平坦化面を得た後膣有機高分子膜の耐
熱性を向上するために１５０〜２５０℃で加熱硬化させ
る。そして、反応性ドライエツチング装置により該有機
高分子膜をドライエツチングし、前記絶縁膜に平坦面を
転写することによって、理想的に平坦化された絶縁膜が
得られる。First, an organic polymer represented by the general formula (1) is applied onto an insulating film substrate having steps by spin coating, spray coating, or the like to a thickness of 0.1 to 10 μm. Subsequently, the organic polymer film is heated at 100 to 200°C using an infrared lamp, a hot plate, a clean oven, etc. to melt and flow it to obtain a flattened surface, and then to improve the heat resistance of the vaginal organic polymer film. Heat and harden at 150-250°C. Then, by dry etching the organic polymer film using a reactive dry etching device and transferring a flat surface to the insulating film, an ideally planarized insulating film can be obtained.
［実施例］
以下、実施例により本発明を更に具体的に説明するが、
本発明の範囲はこれらの実施例によって限定されるもの
ではない。[Example] Hereinafter, the present invention will be explained in more detail with reference to Examples.
The scope of the invention is not limited by these examples.
実施例１
厚さ６０００人の半導体パターン上に５ｉｎ２を８００
０人被着した基板上に、２００℃で２００ＣＰの溶融粘
度を有する重量平均分子量４０００、分子量分布（ＭＷ
／ＭＮ）２．５であるスチレン−２−トリイソプロピル
オキシシリルエチルメタクリレ−１・共重合体（２−ト
リイソプロピルオキシシリルエチルメタクリレート含有
率２０″＋ル％）をキシレンを溶媒として厚さ７０００
人塗布した。塗布後、窒素雰囲気中、１８０℃で３０分
間加熱し、続いて窒素雰囲気中、２４０℃で５分間加熱
し硬化させた。 次に反応性イオンエツチング装置にて
、高周波電力ｉｏｏｗ、チャンバー内圧力４．５Ｐａ、
ＣＦ４流量３０ＳＣＣＭ、０□流量２．５ＳＣＣＭの
条件でエツチングした。 エツチング後、はぼ有機高分
子膜の塗布膜形状がそのまま５ｉ０２膜に転写され、導
体幅５０μｍ以上にわたって高低差が１０００Å以下と
なりほぼ理想的な平坦面が得られた。Example 1 800 pieces of 5in2 on a semiconductor pattern with a thickness of 6000 people
The weight average molecular weight 4000, molecular weight distribution (MW
/MN) 2.5 styrene-2-triisopropyloxysilylethyl methacrylate-1 copolymer (2-triisopropyloxysilylethyl methacrylate content 20'' + 1%) using xylene as a solvent to a thickness of 7,000 mm.
People applied it. After coating, the coating was heated at 180° C. for 30 minutes in a nitrogen atmosphere, and then heated at 240° C. for 5 minutes in a nitrogen atmosphere to be cured. Next, in a reactive ion etching device, high frequency power ioow, chamber internal pressure 4.5 Pa,
Etching was performed under the conditions of a CF4 flow rate of 30 SCCM and a 0□ flow rate of 2.5 SCCM. After etching, the shape of the coating film of the organic polymer film was directly transferred to the 5i02 film, and the height difference was less than 1000 Å over the conductor width of 50 μm or more, resulting in an almost ideal flat surface.
実施例２
厚さ６０００人の半導体パターン上に５ｉｎ２を８００
０人被着した基板上に、重量平均分子量１０００、分子
量分布（ＭＷ／ＭＮ）１．２であるスチレン−ｐ−（ト
リイソプロピルオキシシリル）スチレン共重合体［ｐ−
（）リイソプロビルオキシシリル）スチレン含有率２０
（ル％］をキシレンを溶媒として厚さ７０００人塗布し
た。塗布後、窒素雰囲気中、１８０℃で３０分間加熱し
、続いて窒素雰囲気中、２４０℃で５分間加熱し硬化さ
せた。 次に反応性イオンエツチング装置にて、高周波
電力１００Ｖｖ’、チャンバー内圧力４．５Ｐａ、ＣＦ
４流量３０ＳＣＣＭ、０□流量２．５ＳＣＣＭの条件で
エツチングした。 エツチング後、はぼ有機高分子膜の
塗布膜形状がそのままＳｉＯ□膜に転写され、導体幅５
０μｍ以上にわたって高低差が５００Å以下となりほぼ
理想的な平坦面が得られた。Example 2 5in2 800mm on a 6000mm thick semiconductor pattern
A styrene-p-(triisopropyloxysilyl)styrene copolymer [p-
()liisoprobyloxysilyl)styrene content 20
(Le%) was coated to a thickness of 7,000 using xylene as a solvent. After coating, it was heated at 180°C for 30 minutes in a nitrogen atmosphere, and then cured by heating at 240°C for 5 minutes in a nitrogen atmosphere. In a reactive ion etching device, high frequency power 100Vv', chamber pressure 4.5Pa, CF
Etching was performed under the following conditions: 4 flow rate 30SCCM, 0□ flow rate 2.5SCCM. After etching, the shape of the coating film of the organic polymer film is directly transferred to the SiO□ film, and the conductor width is 5.
The difference in height was less than 500 Å over a range of 0 μm or more, and an almost ideal flat surface was obtained.
実施例３
実施例２と全く同じ方法でスチレン−ｐ−（トリイソプ
ロピルオキシシリル）スチレン共重合体のみを重量平均
分子量１３００、分子量分布（ＭＷ／ＭＮ）１．２であ
るスチレン−ｐ−（トリフェニルオキシシリル）スチレ
ン共重合体［ｐ−（トリフェニルオキシシリル）スチレ
ン含有率２Ｏ−ＦＪＩ／％］にかえて実験を行なった。Example 3 Using exactly the same method as in Example 2, a styrene-p-(triisopropyloxysilyl)styrene copolymer having a weight average molecular weight of 1300 and a molecular weight distribution (MW/MN) of 1.2 was prepared. The experiment was conducted using a p-(triphenyloxysilyl)styrene copolymer [p-(triphenyloxysilyl)styrene content: 2O-FJI/%].
その結果、実施例１とまったく同様の結果が得られ基板
の平坦化を行なうことができた。As a result, exactly the same results as in Example 1 were obtained, and the substrate could be planarized.
発明の効果
このように本発明の平坦化材料を用いてエッチバックに
よる平坦化を行なえば、従来のフォトレジストやポリイ
ミドを用いたエッチバック法と同様のプロセスで導体幅
依存性のない極めて理想的な平坦化面が得られることが
わかる。Effects of the Invention As described above, if planarization is performed by etchback using the planarization material of the present invention, it is possible to achieve extremely ideal planarization without dependence on conductor width using the same process as the conventional etchback method using photoresist or polyimide. It can be seen that a flattened surface can be obtained.
また、本発明の平坦化材料は、半導体集積回路素子製造
におけるリソグラフィー工程において、多層レジスト法
の下層材料（平坦化層用材料）としても使用することが
できる。The planarization material of the present invention can also be used as a lower layer material (planarization layer material) in a multilayer resist method in a lithography process in the manufacture of semiconductor integrated circuit devices.
Claims (1)
またはハロゲン原子、Ｒ＿４は▲数式、化学式、表等が
あります▼ またはフェニレン基、Ｒ＿５、Ｒ＿６はアルキル基、芳
香族基、置換シリル基、Ａｒはフェニレン基、Ｘは０〜
２の整数、ｎは１以上の整数、ｍは０または１以上の整
数を表す。）で示され、２００℃で５０００ＣＰ以下の
溶融粘度を有する有機高分子からなることを特徴とする
平坦化材料。 ２、有機高分子の重量平均分子量が５００〜１５００、
分子量分布（ＭＷ／ＭＮ）が１．５未満である請求項１
記載の平坦化材料。 ３、ｍとｎの比が９９：１〜５０：５０である請求項１
または２記載の平坦化材料。[Claims] 1. General formulas: ▲Mathematical formulas, chemical formulas, tables, etc.▼(1) (In the formula, R_1, R_2, R_3 are hydrogen atoms, methyl groups, or halogen atoms, R_4 is ▲Mathematical formulas, chemical formulas, There are tables etc. ▼ Or phenylene group, R_5 and R_6 are alkyl groups, aromatic groups, substituted silyl groups, Ar is phenylene group, X is 0-
2, n is an integer of 1 or more, and m is 0 or an integer of 1 or more. ) and is characterized by being made of an organic polymer having a melt viscosity of 5000 CP or less at 200°C. 2. The weight average molecular weight of the organic polymer is 500 to 1500,
Claim 1 wherein the molecular weight distribution (MW/MN) is less than 1.5.
Flattening material as described. 3. Claim 1, wherein the ratio of m and n is 99:1 to 50:50.
Or the flattening material according to 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4929189A JPH02227408A (en) | 1989-02-28 | 1989-02-28 | Flattening material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4929189A JPH02227408A (en) | 1989-02-28 | 1989-02-28 | Flattening material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02227408A true JPH02227408A (en) | 1990-09-10 |
Family
ID=12826801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4929189A Pending JPH02227408A (en) | 1989-02-28 | 1989-02-28 | Flattening material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02227408A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5985524A (en) * | 1997-03-28 | 1999-11-16 | International Business Machines Incorporated | Process for using bilayer photoresist |
-
1989
- 1989-02-28 JP JP4929189A patent/JPH02227408A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5985524A (en) * | 1997-03-28 | 1999-11-16 | International Business Machines Incorporated | Process for using bilayer photoresist |
| USRE38282E1 (en) | 1997-03-28 | 2003-10-21 | International Business Machines Corporation | Process for using bilayer photoresist |
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