JPH0222433A - Copper alloy for electronic equipment - Google Patents
Copper alloy for electronic equipmentInfo
- Publication number
- JPH0222433A JPH0222433A JP1056957A JP5695789A JPH0222433A JP H0222433 A JPH0222433 A JP H0222433A JP 1056957 A JP1056957 A JP 1056957A JP 5695789 A JP5695789 A JP 5695789A JP H0222433 A JPH0222433 A JP H0222433A
- Authority
- JP
- Japan
- Prior art keywords
- copper alloy
- strength
- electronic devices
- alloy
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 24
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 22
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 20
- 239000010949 copper Substances 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract 2
- 239000000203 mixture Substances 0.000 claims description 13
- 229910000679 solder Inorganic materials 0.000 abstract description 11
- 229910045601 alloy Inorganic materials 0.000 abstract description 8
- 239000000956 alloy Substances 0.000 abstract description 8
- 239000011159 matrix material Substances 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 11
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Landscapes
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は集積回路のリードフレーム材等の電子機器用銅
合金に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a copper alloy for electronic devices such as lead frame materials for integrated circuits.
［従来の技術］
電子機器に使用される材料は、部品の小型化や高信頼性
の要求に伴い、高強度、高電導性に加え、耐食性や耐熱
性のより優れたものが望まれている。[Prior art] Materials used in electronic devices are required to have high strength and high conductivity, as well as superior corrosion resistance and heat resistance, in line with demands for smaller parts and higher reliability. .
集積回路のリードフレーム材の例では、従来鉄系の４２
アロイ（Ｆｅ−４２％Ｎｉ）と銅系に大別されるが、近
年は高集積度化による発熱から熱を逃がすため、銅系材
への変更が進みつつある。しかしながら−方では小型化
の進行にともなって材料自体も薄板化が進み、従来の銅
合金の強度水準では不十分でＱＦＰ （クラオード・フ
ラット・パッケージ）タイプのＩＣパッケージにおいて
は−４２アロイが依然として使用されている。これらの
動きの中で、広範囲のニーズに応じられる水準の目安と
して４２アロイと同等の強度、即ち引張り強さで７０Ｋ
ｇｆ／ｍｍ相当、電気伝導率としては３０％ｌＡＣ３以
上を合わせ持つ材料が望まれている。In the example of lead frame material for integrated circuits, conventional iron-based 42
They are broadly classified into alloy (Fe-42%Ni) and copper-based materials, but in recent years there has been a shift to copper-based materials in order to dissipate heat generated by higher integration. However, as miniaturization progresses, materials themselves become thinner, and the strength level of conventional copper alloys is insufficient, so -42 alloy is still used in QFP (clad flat package) type IC packages. has been done. Among these movements, as a guideline for a level that can meet a wide range of needs, the strength equivalent to 42 alloy, that is, the tensile strength of 70K.
A material having an electrical conductivity equivalent to gf/mm of 30%lAC3 or more is desired.
従来の電子機器用銅合金としてはＣＤＡ （Ｃｏｐｐｅ
ｒＤｅｖｅｌｏｐｍｅｎシＡｓ５ｏｃｉａｔ、１ｏｎ）
Ｃ１９４００合金やＣｕ〜０．１％Ｓｎ、Ｃｕ〜０．１
％Ｆｅなどの高導電型（引張り強さは約５０Ｋｇｆ／ｍ
耐程度であるが、電気伝導率は６０％ｌＡＣ３以」―）
や、りん青銅の様な高強度型（強度は４２アロイ水準で
あるが、電気伝導率は２０％■＾Ｃ３以下）が主に使わ
れてきており、いずれも強度と電気伝導率の両方を満足
させることが出来なかった。CDA (Coppe) is a conventional copper alloy for electronic devices.
rDevelopment As5ociat, 1on)
C19400 alloy, Cu~0.1%Sn, Cu~0.1
High conductivity type such as %Fe (tensile strength is approximately 50Kgf/m
It is resistant to electrical conductivity of 60%lAC3 or higher."
High-strength types such as steel and phosphor bronze (strength is at the level of 42 alloy, but electrical conductivity is less than 20% C3) have been mainly used, and both have high strength and electrical conductivity. I couldn't satisfy you.
そこで例えば特開昭５８−１０４１４８号公報に、 Ｎ
ｉ０．０５〜２．０重量％、およびｐ ｏ、ｏｏｓ〜０
．２重量％を含有する銅合金が示されており、Ｃｕ特有
の導電性及び加工性を著しく劣化させることなく１強度
及び耐熱性を向上させようとするものである。Therefore, for example, in Japanese Patent Application Laid-Open No. 58-104148, N
i0.05-2.0% by weight, and po,oos~0
．． A copper alloy containing 2% by weight is shown, which is intended to improve the strength and heat resistance without significantly deteriorating the electrical conductivity and workability characteristic of Cu.
［発明が解決しようとする課題］
しかし上記特開昭５８−１０４１４８号公報に示された
銅合金の場合、優れた導電性を示すが、より強度的に優
れた電子機器用材料の開発が望まれている。[Problems to be Solved by the Invention] However, although the copper alloy disclosed in JP-A-58-104148 exhibits excellent conductivity, it is desirable to develop a material for electronic devices with even greater strength. It is rare.
本発明はかかる課題を解決するためになされたもので、
強度と電気導電率の両方に優れた特性を有する電子機器
用銅合金を得ることを目的とする。The present invention was made to solve such problems,
The purpose is to obtain a copper alloy for electronic devices that has excellent properties in both strength and electrical conductivity.
また、本発明の別の発明はさらに高温環境における信頼
性低下を抑制することができる電子機器用銅合金を得る
ことを目的とする。Furthermore, another object of the present invention is to obtain a copper alloy for electronic devices that can suppress a decrease in reliability in a high-temperature environment.
［課題を解決するための手段］
本発明の電子機器用銅合金は重量組成比にてＮｉ１．２
〜４．０％、Ｐ ０．２５〜０．８４％であって、添付
図面の線Ａ−Ｆで囲まれる範囲内のＮｉ、Ｐを含有し、
残部がＣｕ及び不可避の不純物からなることを特徴とす
るものである。[Means for Solving the Problems] The copper alloy for electronic devices of the present invention has a weight composition ratio of Ni1.2.
~4.0%, P 0.25~0.84%, containing Ni and P within the range surrounded by line A-F in the attached drawings,
It is characterized in that the remainder consists of Cu and unavoidable impurities.
本発明の別の発明の電子機器用銅合金は、重量組成比に
てＮｉ １．２〜４．０％、Ｐ ０．２５〜０．８４％
であって、添付図面の線Ａ〜Ｆで囲まれる範囲内のＮｉ
、ＰおよびＺｎＯ−０３〜０．５％を含有し、残部がＣ
ｕ及び不可避の不純物からなることを特徴とするもので
ある。The copper alloy for electronic devices according to another aspect of the present invention has a weight composition ratio of 1.2 to 4.0% Ni and 0.25 to 0.84% P.
and Ni within the range surrounded by lines A to F in the attached drawings.
, P and ZnO-03 to 0.5%, the balance being C
It is characterized by consisting of u and unavoidable impurities.
［作用］
本発明において、Ｎｉ、 Ｐ等の比較的安価な構成元素
からなる銅系合金であり、特にＮｉとＰを原子比で５：
２、即ち重量比的に約５：１の比率で含有させることに
より、生成するＮｉｓ Ｐ２をマトリックス中に均一に
分散させて、強度向上と同時に優れた電気伝導率が得ら
れるものである。[Function] In the present invention, it is a copper-based alloy consisting of relatively inexpensive constituent elements such as Ni and P, and in particular, the atomic ratio of Ni and P is 5:5.
By containing Nis P2 at a ratio of about 5:1 by weight, Nis P2 produced can be uniformly dispersed in the matrix, and excellent electrical conductivity can be obtained as well as improved strength.
本発明の別の発明において、Ｚｎの添加により、ハンダ
付またはハンダメツキ後の高温環境におけるハンダ層の
剥離等の信頼性低下を抑える効果が認められる。In another aspect of the present invention, the addition of Zn has the effect of suppressing deterioration in reliability such as peeling of the solder layer in a high temperature environment after soldering or solder plating.
［実施例コ
図面は本発明の電子機器用銅合金のＮｉとＰの組成範囲
を示す線図であり、図中縦軸はＮｉ含有量を、横軸はＰ
含有量を示す。[Example 4] The drawing is a diagram showing the composition range of Ni and P in the copper alloy for electronic devices of the present invention, in which the vertical axis represents the Ni content and the horizontal axis represents the P content.
Indicates the content.
以下に本発明の電子機器用銅合金に係わるＮｉおよびＰ
の添加理由と、その組成範囲の限定理由を説明する。Ｎ
ｉおよびＰの元素が金属間化合物を効率よく生成し、強
度の向上と電気伝導率の低下の少ない範囲としは、Ｎｉ
１．２％〜４．０重量％であり、１．２％以下では金
属間化合物が少なく、強度の向上が少なく、４．０％を
越えると強度水準の向上が配合量に比し少なく、又電気
伝導率の低下と、ハンダメツキ耐熱性が劣化する傾向に
ある。ＮｉとＰは、いくつかの金属化合物をつくること
が例えば刊行物（Ｆｒａｎｃｉｓ Ａ、５ｈｕｎｋ
：Ｃｏｎ５ｔｉｔｕｔｉｏｎ ｏｆ Ｂｉｎａｒｙ
Ａ１１ｏｙρ５５０）でも示されており、中でもこ
れらの元素を原子比で５：２即ち重量比的に約５：１の
比率で添加することにより生成するＮ１５Ｐ＋をマトリ
ックス中に均一に分散させたときに優れた強度と電気伝
導率が得られる。なおＰ含有量の範囲はこの金属間化合
物の組成比率と上記Ｎｉ量より一義的に定められるが特
に量産時のＰのバラツキを加味して、上下に２０％の許
容幅を設定し０．２５〜０．８４重量％とじた。The following describes Ni and P related to the copper alloy for electronic devices of the present invention.
The reason for the addition of and the reason for limiting the composition range will be explained. N
The range in which the elements i and P efficiently generate intermetallic compounds and improve strength and reduce electrical conductivity is defined as
The amount is 1.2% to 4.0% by weight, and if it is less than 1.2%, there will be less intermetallic compounds and the strength will not improve much, and if it exceeds 4.0%, the improvement in the strength level will be small compared to the amount blended. Furthermore, there is a tendency for the electrical conductivity to decrease and the solder plating heat resistance to deteriorate. Ni and P form some metal compounds, for example in publications (Francis A, 5hunk).
:Constitution of Binary
A11oyρ550) is also shown, and among them, N15P+, which is produced by adding these elements in an atomic ratio of 5:2, that is, a weight ratio of approximately 5:1, is excellent when uniformly dispersed in the matrix. This results in improved strength and electrical conductivity. The range of P content is uniquely determined by the composition ratio of this intermetallic compound and the above-mentioned Ni amount, but in particular, taking into consideration the variation in P during mass production, an allowable range of 20% above and below is set to 0.25. ~0.84% by weight.
上限はマトリックス中に過剰のＰが含有されると、電気
伝導率が低下するため、下限はこれ以下であると金属間
化合物の生成が少なく強度向上が期待でき無くなるため
に制限するものである。The upper limit is set because if excessive P is contained in the matrix, the electrical conductivity decreases, and the lower limit is set because if it is less than this, there will be little generation of intermetallic compounds and no improvement in strength can be expected.
本発明の別の発明の電子機器用銅合金に係わるＺｎの添
加は、Ｚｎがハンダ付またはハンダメツキ後の高温環境
におけるハンダ層の剥離等の信頼性低下を抑える効果が
認められるため行われる。その最小必要量の０．０３重
量％を下限とし、上限については応力腐食の点で０．５
重量％とした。The addition of Zn to the copper alloy for electronic devices according to another aspect of the present invention is performed because Zn is recognized to be effective in suppressing deterioration in reliability such as peeling of the solder layer in a high-temperature environment after soldering or solder plating. The minimum required amount is 0.03% by weight, and the upper limit is 0.5% in terms of stress corrosion.
It was expressed as weight%.
以下本発明の実施例および比較例について説明する。Examples and comparative examples of the present invention will be described below.
試料の製作は高周波誘導炉にて溶解後厚さ２０ｍｍの鋳
型に鋳込み表面を面前後に冷間圧延と熱処理を繰り返し
、最終５０％の冷間加工をして０−２５ｍｍの板状に仕
上げた。なお、最終仕上げ圧延前の熱処理は４５０℃で
２時間の焼き戻し処理を施した。表に本発明の実施例と
比較例の諸特性を示す。The sample was manufactured by melting it in a high frequency induction furnace, casting it into a mold with a thickness of 20 mm, repeating cold rolling and heat treatment on the front and back surfaces, and final 50% cold working to finish it into a plate shape of 0-25 mm. Note that the heat treatment before the final finish rolling was a tempering treatment at 450° C. for 2 hours. The table shows various characteristics of examples of the present invention and comparative examples.
表の結果より、Ｎｉ、Ｐの含有量の少ない試料Ｎｏｌで
は強度水準が低く、またＮｏ２ではＮｉ含有量が多いも
ののＰが少なく所定の重量比率となっていないために、
強度も約５０Ｋｇｆ／ｍボと低い。一方Ｎｉ、Ｐの含有
量を増大させ、それらの元素の重量比率も約５＝１とし
た試料Ｎｏ３〜８では強度的に優れたものが得られ。From the results in the table, sample No. 1, which has a low content of Ni and P, has a low strength level, and sample No. 2, which has a high Ni content, has a low P content and does not have a predetermined weight ratio.
The strength is also low at about 50 kgf/m. On the other hand, samples Nos. 3 to 8 in which the contents of Ni and P were increased and the weight ratio of these elements was set to about 5=1 were obtained with excellent strength.
電気伝導率も３０％ｌＡＣ３以上の高水市にある。なお
試料Ｎｏ８はハンダ耐熱性の向上を目的として少量のＺ
ｎを添加したもので溶融した９０％ｐｂ−ｉｏ％Ｓｎハ
ンダ浴中に試料を浸漬してハンダ付をした後１５０℃の
温度にて保持し、ハンダ付部の密着面げを行い剥離等が
生じるまでの時間を調べた結果Ｚｎを含有しない試料Ｎ
ｏ７に比べてハンダ剥離時間が約２０％延長していた。It is located in Takasui City, where the electrical conductivity is over 30%lAC3. In addition, sample No. 8 contains a small amount of Z for the purpose of improving solder heat resistance.
After soldering the sample by immersing it in a 90% pb-io% Sn solder bath melted with n-added solder, the sample was held at a temperature of 150°C, and the soldered part was surface-faced for close contact to prevent peeling. As a result of investigating the time taken for Zn to occur, sample N that does not contain Zn
The solder removal time was approximately 20% longer than o7.
また、Ｚｎ量が０．７３％の試料Ｎｏ９においては、応
力腐食感受性が大きくなるため、上限については自ずと
制限され追加実験の結果０．５％以上で劣化の大きいこ
とが認められた。なお、Ｎｉ量とＰ量の組成比率が５：
１から大きくずれた例として試料Ｎｏ１ｌ。In addition, in sample No. 9 with a Zn content of 0.73%, the stress corrosion susceptibility increases, so the upper limit is naturally limited, and as a result of additional experiments, it was recognized that the deterioration is large when the Zn content is 0.5% or more. In addition, the composition ratio of Ni amount and P amount is 5:
Sample No. 1l is an example of a large deviation from 1.
１２の場合−即ちＮ ｉ ／ Ｐ ＞ ５の試料Ｎｏ１
ｌとＮｉ／Ｐ＜５の試料Ｎｏ１２では適正組成比率から
大きくずれているためこの合金の電気伝導率への阻害が
少なく、強化に寄与するＮ１５Ｐ２の化合物を効率的に
生成することができない。このために過剰となったＮｉ
やＰはマトリックス中に固溶して電気伝導率の大幅な低
下を来し、リードフレーム材としての要求に充分路えら
れなくなる６ さらに強度的にも若干低めとなっている
ことからも、特許請求の範囲に示した組成範囲は有効な
効果を得る上で極めて重要であることが解る。In the case of 12 - i.e. sample No. 1 with N i / P > 5
Sample No. 12 with l and Ni/P<5 has a large deviation from the appropriate composition ratio, so the electrical conductivity of this alloy is less inhibited, and the N15P2 compound that contributes to strengthening cannot be efficiently produced. This resulted in excess Ni
and P dissolve in the matrix and cause a significant drop in electrical conductivity, making it unable to meet the requirements for lead frame materials.6 Furthermore, the strength is also slightly lower, so the patent It can be seen that the composition ranges indicated in the claims are extremely important in obtaining effective effects.
なお本発明の電子機器用銅合金は電子機器用として集積
回路のリードフレーム材、リレー、スイッチ等の広範囲
な用途に適用できるだけでなく、比較的安価な成分から
成るため他の用途にも安価な銅合金として有用である。The copper alloy for electronic devices of the present invention can not only be used in a wide range of applications such as lead frame materials for integrated circuits, relays, and switches for electronic devices, but also can be used for other uses as it is composed of relatively inexpensive components. Useful as a copper alloy.
［発明の効果］
以上説明したとうり、本発明は重量組成比にてＮ ｉ
１． 、２〜４．０％、Ｐ ０．２５〜０．８４％であ
って、添付図面の線Ａ−Ｆで囲まれる範囲内のＮｉ、Ｐ
を含有し、残部がＣｕ及び不可避の不純物からなること
を特徴とするものを用いることにより、強度と電気導電
率の両方に優れた特性を有する電子機器用銅合金を得る
ことができる。[Effects of the Invention] As explained above, the present invention has a weight composition ratio of N i
1. , 2-4.0%, P 0.25-0.84%, within the range surrounded by line A-F in the attached drawings, Ni, P
By using a copper alloy for electronic devices that has excellent properties in both strength and electrical conductivity, it is possible to obtain a copper alloy for electronic devices that has excellent properties in both strength and electrical conductivity.
本発明の別の発明は、重量組成比にてＮｉ １．２〜４
．０％、Ｐ （Ｌ２５〜０．８４％であって、添付図面
の線Ａ〜Ｆで囲まれる範囲内のＮｉ、ＰおよびＺｎ０．
０３〜０．５％を含有し、残部がＣｕ及び不可避の不純
物からなることを特徴とするものを用いることにより、
上記効果に加えて高温環境における信頼性低下を抑制す
ることができる電子機器用銅合金を得ることができる。Another invention of the present invention is that the weight composition ratio is Ni 1.2 to 4.
．． 0%, P (L25 to 0.84%, Ni, P and Zn0. within the range surrounded by lines A to F in the attached drawings).
By using a material characterized by containing 0.3 to 0.5% and the remainder consisting of Cu and unavoidable impurities,
In addition to the above effects, it is possible to obtain a copper alloy for electronic devices that can suppress a decrease in reliability in a high-temperature environment.
図面は本発明の電子機器用銅合金のＮｉとＰの組成範囲
を示す線図であり、図中縦軸はＮｉ含有量を、横軸はＰ
含有量を示す。The drawing is a diagram showing the composition range of Ni and P in the copper alloy for electronic devices of the present invention, in which the vertical axis represents the Ni content and the horizontal axis represents the P content.
Indicates the content.
Claims (2)
５〜０．８４％であって、添付図面の線Ａ−Ｆで囲まれ
る範囲内のＮｉ、Ｐを含有し、残部がＣｕ及び不可避の
不純物からなることを特徴とする電子機器用銅合金。(1) Ni1.2-4.0%, P0.2 in weight composition ratio
A copper alloy for electronic devices, characterized in that it contains 5 to 0.84% of Ni and P within the range surrounded by line A-F in the attached drawings, with the remainder consisting of Cu and unavoidable impurities.
５〜０．８４％であって、添付図面の線Ａ−Ｆで囲まれ
る範囲内のＮｉ、ＰおよびＺｎ０．０３〜０．５％を含
有し、残部がＣｕ及び不可避の不純物からなることを特
徴とする電子機器用銅合金。(2) Ni1.2-4.0%, P0.2 in weight composition ratio
5 to 0.84%, containing 0.03 to 0.5% of Ni, P, and Zn within the range surrounded by line A-F in the attached drawing, and the remainder consisting of Cu and unavoidable impurities. Features of copper alloy for electronic devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1056957A JPH0222433A (en) | 1988-04-26 | 1989-03-09 | Copper alloy for electronic equipment |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10320688 | 1988-04-26 | ||
| JP63-103206 | 1988-04-26 | ||
| JP1056957A JPH0222433A (en) | 1988-04-26 | 1989-03-09 | Copper alloy for electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0222433A true JPH0222433A (en) | 1990-01-25 |
Family
ID=26397963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1056957A Pending JPH0222433A (en) | 1988-04-26 | 1989-03-09 | Copper alloy for electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0222433A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5145807A (en) * | 1988-05-11 | 1992-09-08 | Mitsubishi Kasei Corporation | Method of making semiconductor laser devices |
| WO2015122423A1 (en) * | 2014-02-12 | 2015-08-20 | 株式会社Uacj | Copper alloy material and copper alloy pipe |
| CN113862511A (en) * | 2021-10-09 | 2021-12-31 | 浙江惟精新材料股份有限公司 | Cu-Ni-Mn-P alloy and preparation method thereof |
-
1989
- 1989-03-09 JP JP1056957A patent/JPH0222433A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5145807A (en) * | 1988-05-11 | 1992-09-08 | Mitsubishi Kasei Corporation | Method of making semiconductor laser devices |
| WO2015122423A1 (en) * | 2014-02-12 | 2015-08-20 | 株式会社Uacj | Copper alloy material and copper alloy pipe |
| CN105992832A (en) * | 2014-02-12 | 2016-10-05 | 株式会社Uacj | Copper alloy material and copper alloy pipe |
| JPWO2015122423A1 (en) * | 2014-02-12 | 2017-03-30 | 株式会社Uacj | Copper alloy material and copper alloy tube |
| CN113862511A (en) * | 2021-10-09 | 2021-12-31 | 浙江惟精新材料股份有限公司 | Cu-Ni-Mn-P alloy and preparation method thereof |
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