JPH02216605A - Production of thin film magnetic head - Google Patents
Production of thin film magnetic headInfo
- Publication number
- JPH02216605A JPH02216605A JP3610389A JP3610389A JPH02216605A JP H02216605 A JPH02216605 A JP H02216605A JP 3610389 A JP3610389 A JP 3610389A JP 3610389 A JP3610389 A JP 3610389A JP H02216605 A JPH02216605 A JP H02216605A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic layer
- lower magnetic
- thin film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000010408 film Substances 0.000 claims abstract description 62
- 230000001681 protective effect Effects 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 150000002927 oxygen compounds Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 125
- 238000000034 method Methods 0.000 abstract description 32
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 27
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 7
- 239000011241 protective layer Substances 0.000 abstract description 3
- 239000000696 magnetic material Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、磁気記録装置等に用いられる薄膜磁気ヘッド
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a thin film magnetic head used in a magnetic recording device or the like.
従来の薄膜磁気ヘッドは、米国特許節
４．２４２，７１０号に記載されている。この薄膜磁気
ヘッドは、第２図に示すように、基板１の上に下部磁性
体Ｎ２、ギャップ用薄膜３、ｆｉ縁暦４、該絶縁Ｍ４の
間に導体層５、上部磁性体層６が順次積層されている。A conventional thin film magnetic head is described in U.S. Pat. No. 4,242,710. As shown in FIG. 2, this thin film magnetic head has a lower magnetic material N2, a gap thin film 3, a fi rim 4 on a substrate 1, a conductor layer 5 and an upper magnetic layer 6 between the insulation M4. Laminated in sequence.
下部及び下部磁性体層２．６は導体層５を囲む形でギャ
ップ用薄膜３を介して閉磁路を形成している。下部磁性
体層６は、媒体対抗面７付近では該媒体対抗面に垂直で
あるが、媒体対抗面７よりわずか離れた所では斜め方向
に立ち上がり、段差８を形成している。The lower and lower magnetic layers 2.6 surround the conductor layer 5 and form a closed magnetic path via the gap thin film 3. The lower magnetic layer 6 is perpendicular to the medium opposing surface near the medium opposing surface 7, but stands up obliquely at a location slightly away from the medium opposing surface 7, forming a step 8.
この薄膜磁気ヘッドを媒体対抗面７の方向より見た図を
第３図に示す、媒体対抗面７に露出する下部磁性体層２
のｌ１ｌｉｌｌは、上部磁性体層６の幅１２より大きい
、この理由を薄膜磁気ヘッドの作製方法を基に説明する
。FIG. 3 shows a view of this thin film magnetic head viewed from the direction of the medium facing surface 7. The lower magnetic layer 2 exposed on the medium facing surface 7 is shown in FIG.
l1lill is larger than the width 12 of the upper magnetic layer 6. The reason for this will be explained based on the method for manufacturing a thin film magnetic head.
上記薄膜磁気ヘッドの作製方法は次の通りである。まず
、基板１の上に直接あるいは保護膜を介して下部磁性体
層２を堆積し、所望のパターンに加工する。堆積方法に
は蒸着、スパッタリング、めっき等が選択でき、材料に
はＮｉ、Ｆｅ、Ｃｏ等の磁性材及びそれらの合金等が選
ばれる。加工法にはスパッタエツチング、イオンビーム
エツチング、湿式の化学エツチング及びホトレジスト等
をマスクにしためっき、リフトオフ法等が選択できる。The method for manufacturing the above thin film magnetic head is as follows. First, the lower magnetic layer 2 is deposited directly or via a protective film on the substrate 1 and processed into a desired pattern. Vapor deposition, sputtering, plating, etc. can be selected as the deposition method, and magnetic materials such as Ni, Fe, Co, and alloys thereof are selected as the material. As the processing method, sputter etching, ion beam etching, wet chemical etching, plating using a mask such as photoresist, lift-off method, etc. can be selected.
次にギャップ用薄膜３を堆積し、必要に応じパターン加
工する。さらに、絶縁層４と導体層５を交互に堆積、加
工をくり返すことにより、コイルを形成する。最後に上
部磁性体層６を堆積、加工して薄膜磁気ヘッドの主要部
分の形成を終える。Next, a gap forming thin film 3 is deposited and patterned if necessary. Furthermore, a coil is formed by alternately depositing the insulating layer 4 and the conductive layer 5 and repeating the processing. Finally, the upper magnetic layer 6 is deposited and processed to complete the formation of the main portion of the thin film magnetic head.
上部磁性体層６の堆積、加工方法は下部磁性体層２と同
様である。この時、上部磁性体Ｎ６の幅１２が下部磁性
体層２の帽１１より大きいと、上部磁性体層６が下部磁
性体層２の両側にギャップ用薄膜３を介して回り込むこ
とになり、目的から外れた磁気ギャップを下部磁性体層
２の両側に作ることになる。磁気記録媒体への書込み及
び読出しは磁気ギャップにより行われるので、下部磁性
体層の両側の磁気ギャップは磁気漏れ等の問題となる。The deposition and processing methods for the upper magnetic layer 6 are the same as those for the lower magnetic layer 2. At this time, if the width 12 of the upper magnetic material N6 is larger than the cap 11 of the lower magnetic material layer 2, the upper magnetic material layer 6 will wrap around both sides of the lower magnetic material layer 2 via the gap thin film 3. A magnetic gap deviating from the above is created on both sides of the lower magnetic layer 2. Since writing to and reading from a magnetic recording medium is performed using a magnetic gap, the magnetic gaps on both sides of the lower magnetic layer cause problems such as magnetic leakage.
そのため、幅１２は＠１１と同じか小さくする必要があ
る。さらに、上部磁性体層６と下部磁性体層２の作製時
におけるパターン合わせ精度並びに＠１１゜１２の寸法
精度を考慮すると、上部磁性体層６の下部磁性体層２へ
の回り込みを防止するためには上部磁性体層６の幅１２
は下部磁性体層２の幅１１より小さくする必要がある。Therefore, the width 12 needs to be the same as or smaller than @11. Furthermore, considering the pattern alignment accuracy and the dimensional accuracy of @11°12 during the fabrication of the upper magnetic layer 6 and the lower magnetic layer 2, it is necessary to prevent the upper magnetic layer 6 from wrapping around the lower magnetic layer 2. is the width 12 of the upper magnetic layer 6.
needs to be smaller than the width 11 of the lower magnetic layer 2.
書込みに必要な磁束は磁性体のギャップが小さい部分で
強く発生するので、上部磁性体層６と下部磁性体層２が
接近している部分が実際に記録されるトラック幅となり
、トラック幅は上部磁性体層６の幅１２により決定され
る。Since the magnetic flux required for writing is strongly generated in the part where the gap between the magnetic materials is small, the actual recorded track width is the part where the upper magnetic layer 6 and the lower magnetic layer 2 are close to each other. It is determined by the width 12 of the magnetic layer 6.
従来のこれらのトラック幅加工は段差８の上に形成され
た上部磁性体ｍ６に対して進めなければならなかった。In the conventional track width processing, it was necessary to proceed with respect to the upper magnetic body m6 formed on the step 8.
このため、上部磁性体７Ｉ６は段差８の谷底に当たる部
分において、薄膜磁気ヘッドに要求されている寸法通り
に加工する必要が生ずるが、一般に知られているホトリ
ソグラフィーの手法やドライエツチングの技術では高精
度な加工は困難となる。例えば、段差８の高さが１０．
であり、トラック幅の要求精度が±１−とすると加工後
の上部磁性体層６の１ＩＩ１１２は要求精度以上にばら
つき、歩留りの大幅低下をもたらす結果となる。For this reason, it is necessary to process the upper magnetic body 7I6 at the bottom of the step 8 to the dimensions required for the thin-film magnetic head, but the generally known photolithography and dry etching techniques are difficult to process. Accurate machining becomes difficult. For example, the height of step 8 is 10.
If the required accuracy of the track width is ±1-, then the 1II112 of the upper magnetic layer 6 after processing will vary more than the required accuracy, resulting in a significant drop in yield.
以上の問題を解決した薄膜磁気ヘッドが特開昭５７−１
１３４１０号公報に記載されている。この薄膜磁気ヘッ
ドは、その媒体対抗面の方向より見た図を第４図に示す
ように、下部磁性体層２の幅１１を上部磁性体層６のｌ
ｌ１１２より小さくし、上部磁性体層６の回り込みを防
止するため、下部磁性体層２の両側に非磁性Ｎ９を配し
たものである。非磁性層９を下部磁性体層２の両側にほ
ぼ同一の膜厚で配することにより、上部磁性体層６を回
り込みがなく、かつ下部磁性体層２より幅広く形成する
ことができる。この結果、精度の得られ易い下部磁性体
層２のＩ’ｌｌがトラック幅となるため、歩留りの大幅
向上が期待できる。A thin film magnetic head that solved the above problems was published in JP-A-57-1.
It is described in Publication No. 13410. In this thin film magnetic head, as shown in FIG. 4 when viewed from the direction of the surface facing the medium, the width 11 of the lower magnetic layer 2 is equal to the width 11 of the upper magnetic layer 6.
Nonmagnetic N9 is arranged on both sides of the lower magnetic layer 2 in order to make it smaller than l112 and to prevent the upper magnetic layer 6 from going around. By disposing the nonmagnetic layer 9 on both sides of the lower magnetic layer 2 with substantially the same thickness, the upper magnetic layer 6 can be formed to be wider than the lower magnetic layer 2 without wrapping around. As a result, since I'll of the lower magnetic layer 2, which is easy to obtain accuracy, becomes the track width, a significant improvement in yield can be expected.
特開昭５７−１１３４１０号公報には、この薄膜磁気ヘ
ッドの製造のために、基板上に下部磁性体Ｍ２を形成し
、その上にホトレジストのパターンを形成し、これをマ
スクに下部磁性体層２のパターンを形成し、ついでこの
ホトレジストパターンが存在するまま非磁性膜９を積層
し、下部磁性体層２のパターンの上のホトレジストを除
去すると共にその上に形成されていた非磁性膜９を除去
するという、いわゆるリフトオフ法が提案されている。JP-A-57-113410 discloses that in order to manufacture this thin film magnetic head, a lower magnetic material M2 is formed on a substrate, a photoresist pattern is formed on it, and a lower magnetic material layer is formed using this as a mask. 2 is formed, and then a non-magnetic film 9 is laminated while this photoresist pattern remains, and the photoresist on the pattern of the lower magnetic layer 2 is removed, and the non-magnetic film 9 formed thereon is removed. A so-called lift-off method has been proposed.
また特開昭６２−２９１７１１号公報には、下部磁性体
Ｍ２の形成、パターニングの後、非磁性層９を堆積し、
研摩により下部磁性体Ｎ２の上の非磁性層を除去して上
記と同様な薄膜磁気ヘッドを製造することが提案されて
いる。Furthermore, in Japanese Patent Application Laid-Open No. 62-291711, after forming and patterning the lower magnetic material M2, a non-magnetic layer 9 is deposited,
It has been proposed to manufacture a thin film magnetic head similar to the above by removing the nonmagnetic layer on the lower magnetic body N2 by polishing.
さらにまた、特開昭６３−５８６１２号公報には、基板
１に凹部を作り、そこに下部磁性体Ｍ２を形成し、研摩
により凹部以外の下部磁性体層を除去して同様な薄膜磁
気ヘッドを製造することが提案されている。Furthermore, Japanese Patent Laid-Open No. 63-58612 discloses that a similar thin film magnetic head is manufactured by making a recess in the substrate 1, forming a lower magnetic layer M2 therein, and removing the lower magnetic layer other than the recess by polishing. It is proposed to manufacture.
上記従来技術は、堆積される膜の形状や寸法の精度に対
する配慮がされておらず、高精度で安定に薄膜磁気ヘッ
ドを製造することが困難であるという問題があった。The above-mentioned conventional technology has the problem that no consideration is given to the accuracy of the shape and dimensions of the deposited film, making it difficult to manufacture thin-film magnetic heads with high precision and stability.
すなわち、リフトオフ法においては、基板上のホトレジ
ストパターン周囲における非磁性層９の膜厚は、基板の
平坦面上に形成されている非磁性層９の膜厚と大きく異
なり、平坦面上のそれの半分以下の膜厚しか得られない
場合もある。これを改善するため全体の膜厚を厚くする
と、ホトレジストパターンの側面への非磁性層の付着等
によりリフトオフそのものが困難になり、適合性を持つ
プロセス条件を得ることが困難であるという問題があっ
た。That is, in the lift-off method, the thickness of the non-magnetic layer 9 around the photoresist pattern on the substrate is significantly different from the thickness of the non-magnetic layer 9 formed on the flat surface of the substrate, and In some cases, less than half the film thickness can be obtained. If the overall film thickness is increased to improve this problem, the lift-off itself becomes difficult due to adhesion of the non-magnetic layer to the side surfaces of the photoresist pattern, and there is a problem in that it is difficult to obtain compatible process conditions. Ta.
一方、研摩により下部磁性体層２と非磁性層９の上面を
平坦化する方法は、平坦面を得ることに関してだけはり
フトオフ法より有利である。しかしながら、必要量より
も過剰に研摩してプロセスを安定化しなければならず、
膜厚のばらつきが発生する。薄膜磁気ヘッドの電気特性
は磁性体層の膜厚が０．１Ａ１ｍ変化するだけで変わる
ほど鋭敏であるが、通常の設備で研摩精度を０．１．に
することは困難であるという問題があった。On the other hand, the method of flattening the upper surfaces of the lower magnetic layer 2 and the nonmagnetic layer 9 by polishing is advantageous over the beam lift-off method only in terms of obtaining flat surfaces. However, the process must be stabilized by over-polishing than required;
Variations in film thickness occur. The electrical characteristics of a thin-film magnetic head are so sensitive that they change when the thickness of the magnetic layer changes by just 0.1A1m, but with normal equipment, the polishing accuracy can be reduced by 0.1A. The problem was that it was difficult to do so.
本発明の目的は、高精度で安定に薄膜磁気ヘッドを製造
する方法を提供することにある。An object of the present invention is to provide a method for manufacturing a thin film magnetic head stably with high precision.
上記目的は、（１）基板上に少なくとも下部磁性体層、
ギャップ用薄膜、絶縁層、該絶縁層に周囲を覆われた導
電層、上部磁性体層を所望のパターンに形成する薄膜磁
気ヘッドの製造方法において、上記下部磁性体層の所望
のパターンと少なくともその上部の保護膜を形成する工
程、非磁性膜を設ける工程並びに上記下部磁性体層パタ
ーン上の非磁性膜及び保護膜を除去する工程を有するこ
とを特徴とする薄ｇａｔ気ヘッドの製造方法、（２）上
記下部磁性体層の所望のパターンと少なくともその上部
の保護膜を形成する工程は、上記下部磁性体層と上記保
護膜とを順次形成する工程と、両者のパターンを形成す
る工程よりなる上記（１）記載の薄膜磁気ヘッドの製造
方法、（３）上記下部磁性体１の所望のパターンと少な
くともその上部の保護膜を形成する工程は、上記下部磁
性体層を所望のパターンに形成する工程と少なくとも該
下部磁性体層のパターンの上に上記保護膜を形成する工
程よりなる上記（１）記載の薄膜磁気ヘッドの製造方法
、（４）上記保護膜は、Ｍ素又は酸素化合物によりドラ
イエツチング可能な材料よりなる上記（１）、（２）又
は（３）記載の薄膜磁気ヘッドの製造方法によって達成
される。The above objects include (1) at least a lower magnetic layer on the substrate;
In a method for manufacturing a thin film magnetic head in which a gap thin film, an insulating layer, a conductive layer surrounded by the insulating layer, and an upper magnetic layer are formed in a desired pattern, the desired pattern of the lower magnetic layer and at least the same are formed. A method for manufacturing a thin-gat magnetic head, comprising the steps of forming an upper protective film, providing a nonmagnetic film, and removing the nonmagnetic film and the protective film on the lower magnetic layer pattern. 2) The step of forming the desired pattern of the lower magnetic layer and at least the protective film above the lower magnetic layer includes a step of sequentially forming the lower magnetic layer and the protective film, and a step of forming patterns of both. In the method for manufacturing a thin film magnetic head described in (1) above, (3) the step of forming the desired pattern of the lower magnetic layer 1 and at least a protective film on the upper layer includes forming the lower magnetic layer into a desired pattern. and forming the protective film on at least the pattern of the lower magnetic layer, (4) the protective film is dried with an M element or an oxygen compound. This is achieved by the method for manufacturing a thin film magnetic head as described in (1), (2) or (3) above, which is made of an etched material.
上記（１）項における基板上に少なくとも下部磁性体層
、ギヤツブ用ｉｓ、絶縁層、該絶縁層に周囲を覆われた
導ｆｆｉ暦、上部磁性体層を所望のパターンに形成する
ことは、必らずしも一層毎にパターンを形成することで
はなく、複数の層を順次形成し、同時に、又は逆の順に
パターンに加工してもよい。つまり、第１の層、第２の
層と順次形成し、逆の順に第２の層からパターンに加工
してもよい。また絶縁層は、その一部を形成してから導
電層を形成し、残りの部分を形成してもよい。It is necessary to form at least a lower magnetic layer, an IS for gears, an insulating layer, an insulator surrounded by the insulating layer, and an upper magnetic layer on the substrate in the above item (1) in a desired pattern. Rather than necessarily forming a pattern on a layer-by-layer basis, a plurality of layers may be sequentially formed and processed into a pattern at the same time or in the reverse order. In other words, the first layer and the second layer may be formed in sequence, and the pattern may be processed starting from the second layer in the reverse order. Further, after forming a part of the insulating layer, the conductive layer may be formed, and then the remaining part may be formed.
さらに導電層を二層以上にするために絶縁層と導電層と
を交互に形成してもよい。Furthermore, insulating layers and conductive layers may be alternately formed to have two or more conductive layers.
さらに上記の各層は、基板上に直接形成しても保ｊ！層
を介して形成してもよい。Furthermore, each of the above layers can be maintained even if formed directly on the substrate! It may also be formed through layers.
また、下部磁性体層の所望のパターンと少なくともその
上部の保護膜を形成する工程とは、磁性体層のパターン
の形成と保護膜の形成をどのような順で行ってもよいこ
とを示す。例えば、磁性体層と保護膜とを順次形成して
から両者を所望のパターンとしてもよいし、また磁性体
層のパターンを形成してから保護膜を全面に、または上
記と同様なパターンに形成してもよい。Further, the step of forming the desired pattern of the lower magnetic layer and at least the protective film on the lower magnetic layer indicates that the pattern of the magnetic layer and the protective film may be formed in any order. For example, a magnetic layer and a protective film may be sequentially formed and then both may be formed into a desired pattern, or a magnetic layer pattern may be formed and then a protective film may be formed over the entire surface or in a pattern similar to the above. You may.
下部磁性体層上に形成された保護膜は、さらにその上に
形成された非磁性膜のエツチングに際しエッチバック用
保護膜として作用し、過剰なエツチングから下部磁性体
層を保護する役割りをする。The protective film formed on the lower magnetic layer further acts as an etch-back protective film when etching the non-magnetic film formed thereon, and serves to protect the lower magnetic layer from excessive etching. .
また、下部磁性体層に対し選択的に除去可能なためその
膜厚に変化を与えることがない、それ故、下部磁性体層
の表面と非磁性膜との表面との間が実質的に平坦であり
、高精度の薄膜磁気ヘッドを得ることができる。In addition, since the lower magnetic layer can be selectively removed, there is no change in the film thickness, and therefore the surface between the lower magnetic layer and the non-magnetic film is substantially flat. Therefore, a highly accurate thin film magnetic head can be obtained.
以下１本発明の一実施例を第１図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図は、本発明の一実施例の薄膜磁気ヘッドの製造工
程を示す素子の断面図である。第１図（ａ）に示すよう
に、まずアルミナ・ジルコニアの基板１の上に、アルミ
ナスパッタリングにより保護層ｌＯを全面に形成する。FIG. 1 is a sectional view of an element showing the manufacturing process of a thin film magnetic head according to an embodiment of the present invention. As shown in FIG. 1(a), first, a protective layer 1O is formed over the entire surface of an alumina-zirconia substrate 1 by alumina sputtering.
次に、ＮｉＦｅＣｏからなる下部磁性体層２をスパッタ
リングにより１．５．の厚さに形成する。さらに、トル
エンを原料とするプラズマ化学気相成長法で炭素をエッ
チバック用の保護膜２１として２Ｉ１ｍの厚みに形成す
る。Next, the lower magnetic layer 2 made of NiFeCo is sputtered in steps 1.5. Form to a thickness of . Furthermore, carbon is formed as a protective film 21 for etchback to a thickness of 2I1 m by plasma chemical vapor deposition using toluene as a raw material.
次に、ホトレジストパターンを上記保護膜２１上に形成
し、これをマスクに保護膜２１を０３を含む反応性イオ
ンビームエツチングにより、さらに下部磁性体層２をア
ルゴンガスを用いたイオンミリングにより加工し、所望
の形状とする。この時の保護膜２１と下部磁性体層２の
平面形状を第５図に示す、第１図は、第５図のＡ−Ａ’
断面に対応する。Next, a photoresist pattern is formed on the protective film 21, and using this as a mask, the protective film 21 is processed by reactive ion beam etching including 03, and the lower magnetic layer 2 is processed by ion milling using argon gas. , into the desired shape. The planar shapes of the protective film 21 and the lower magnetic layer 2 at this time are shown in FIG. 5.
Corresponds to the cross section.
また下部磁性体層２のｌｌ１１１は、第５図における直
線状に伸びた部分の幅である。Further, ll111 of the lower magnetic layer 2 is the width of the linearly extending portion in FIG.
なお、基板１としては、アルミナ・ジルコニア等の酸化
物の他に、窒化ケイ素、窒化アルミニウム等の窒化物、
炭化チタン、炭化ケイ素等の炭化物、その他の無機化合
物又は無機単体の焼結体。In addition, as the substrate 1, in addition to oxides such as alumina and zirconia, nitrides such as silicon nitride and aluminum nitride,
Carbides such as titanium carbide and silicon carbide, other inorganic compounds, or sintered bodies of inorganic elements.
複合焼結体等を用いることができる。A composite sintered body or the like can be used.
下部磁性体層２としては、前記の他にニッケル、鉄、コ
バルトの合金等種々の磁性材料を用いることができる。As the lower magnetic layer 2, various magnetic materials other than those mentioned above can be used, such as an alloy of nickel, iron, and cobalt.
また、この層の形成は、蒸着、めっき等地の方法によっ
てもよい。Further, this layer may be formed by a method such as vapor deposition or plating.
保護膜２１の材料としては、次の工程で説明する非磁性
層の材料と相互に選択エツチングが可能な範囲から選ぶ
ことが好ましい。本実施例で用いた炭素膜の場合、結晶
の有無は問わないが、原子間の結合が強いことが望まれ
る。そのため、黒鉛又は黒鉛と同様のＳＰ２混成軌道に
よる結合が主である膜よりも、ダイヤモンド等と同様な
ＳＰ１混成軌道による共有結合を有する膜であることが
好ましい、この膜のエツチングには、酸素又は酸素を含
むガスによるプラズマエツチング、反応性スパッタエツ
チング、反応性イオンビームエツチング等で行うことが
できる。The material for the protective film 21 is preferably selected from a range that allows selective etching with the material for the nonmagnetic layer, which will be explained in the next step. In the case of the carbon film used in this example, the presence or absence of crystals does not matter, but it is desirable that the bonds between atoms be strong. Therefore, it is preferable to use a film that has covalent bonds based on SP1 hybrid orbitals similar to diamond, etc., rather than graphite or a film that mainly has bonds based on SP2 hybrid orbitals similar to graphite. This can be performed by plasma etching using a gas containing oxygen, reactive sputter etching, reactive ion beam etching, or the like.
保護膜２１としては、モリブデン、クロム等の金属膜に
することもできる。特にクロムはフッ素系のガスによる
ドライエッチに耐えるという特徴を持つ、金属膜を用い
た場合、保″’；ｊｉｌ１２１は化学エツチングにより
除去できるため、磁性膜を傷つけることなく容易に除去
することができる。The protective film 21 may also be a metal film made of molybdenum, chromium, or the like. In particular, when using a metal film, chromium has the characteristic of being resistant to dry etching using fluorine-based gases.Since chromium can be removed by chemical etching, it can be easily removed without damaging the magnetic film. .
次に、第１図（ｂ）に示すように、アルミナをスパッタ
リングにより２．０−の厚みに堆積し、非磁性膜９とす
る。非磁性膜９は、下部磁性体層２の厚さより厚くして
、エツチングのばらつきに対するマージンとする。つい
で、第１図（Ｃ）に示すように、ホトレジスト２２を塗
布し、非磁性層９の段差を緩和する。Next, as shown in FIG. 1(b), alumina is deposited to a thickness of 2.0 mm by sputtering to form a nonmagnetic film 9. The nonmagnetic film 9 is made thicker than the lower magnetic layer 2 to provide a margin for etching variations. Next, as shown in FIG. 1(C), a photoresist 22 is applied to reduce the level difference in the nonmagnetic layer 9.
さらに、第１図（ｄ）に示すように、イオンミリングに
より全面を削り、保護膜２１を露出させる。Furthermore, as shown in FIG. 1(d), the entire surface is milled by ion milling to expose the protective film 21.
この方法はＣＦ４ＣＨＦ、を入れたイオンビームエツチ
ングによってもよい。This method may also include ion beam etching using CF4CHF.
その後、第１図（ｅ）に示すように、酸素プラズマエツ
チングを用いて保護膜２１を除去して表面の平坦化を終
了する。保護膜２１は化学的に除去されるため、下部磁
性体Ｎ２は実質的にエツチングされない。Thereafter, as shown in FIG. 1(e), the protective film 21 is removed using oxygen plasma etching to complete the planarization of the surface. Since the protective film 21 is chemically removed, the lower magnetic material N2 is not substantially etched.
平坦化プロセス終了後、第１図（ｆ）に示すように、ア
ルミナをスパッタリングにより０．４−の厚みに堆積し
てギャップ用薄膜３とし、ついで絶縁層、導体層を形成
しく図の部分には表われない）、さらに上部磁性体層６
を形成する。上部磁性体層６は下部磁性体層２と同じ材
料を用い、同じ方法で１．５／ｆｆｉの厚みに、かつそ
の幅１２は下部磁性体層２の幅１１より片側にそれぞれ
０．５−広ばて形成した。After the planarization process is completed, as shown in FIG. 1(f), alumina is deposited to a thickness of 0.4 mm by sputtering to form a thin film 3 for the gap, and then an insulating layer and a conductive layer are to be formed in the area shown in the figure. ), and furthermore, the upper magnetic layer 6
form. The upper magnetic layer 6 is made of the same material as the lower magnetic layer 2, and is made to have a thickness of 1.5/ffi using the same method, and its width 12 is 0.5-0.5 mm on one side from the width 11 of the lower magnetic layer 2. Spread and formed.
本実施例によれば、下部磁性体層２の幅１１によりトラ
ック幅を決定できるので、高密度記録に適した薄膜磁気
ヘッドを安定に作製することができた。According to this example, since the track width can be determined by the width 11 of the lower magnetic layer 2, a thin film magnetic head suitable for high-density recording can be stably manufactured.
本実施例では、第１図（ａ）に示した構造を形成するの
に、同一のホトレジストマスクを用いて下部磁性体／Ｉ
！２と保護層２１をエツチングする方法を示したが、こ
の構造を他の方法で作製した他の実施例を次に示す。す
なわち、下部磁性体層２を堆積パターニングした後、エ
ッチバック用保護膜２１を堆積し、下部磁性体Ｍ２に合
わせてパターニングする。この方法によれば、下部磁性
体層２を直接ホトレジストマスクによりパターニングす
るため、さらに高精度パターンが可能となる。また。In this example, the same photoresist mask is used to form the structure shown in FIG. 1(a).
! 2 and the method of etching the protective layer 21 have been shown, but another example in which this structure was fabricated using another method will be shown below. That is, after depositing and patterning the lower magnetic layer 2, the etch-back protective film 21 is deposited and patterned to match the lower magnetic layer M2. According to this method, since the lower magnetic layer 2 is directly patterned using a photoresist mask, a higher precision pattern is possible. Also.
第６図に示すように、エッチバック用保護膜２１をパタ
ーニングせずに残す方法もある。保護膜２１を残すこと
により容易にかつ高精度な下部磁性体層２のパターニン
グが可能となる。As shown in FIG. 6, there is also a method in which the etch-back protective film 21 is left without patterning. By leaving the protective film 21, it becomes possible to pattern the lower magnetic layer 2 easily and with high precision.
第１図（ａ）の構造を作製するさらに他の実施例を第７
図に示す、第７図においてホトレジスト２３をリフトオ
フ材とするりフトオフ法により下部磁性体層２及び保護
膜２１をパターニングする。この方法によれば、エツチ
ングすることなく高精度パターンを得ることができる。Still another example for manufacturing the structure shown in FIG. 1(a) is shown in FIG.
As shown in FIG. 7, the lower magnetic layer 2 and the protective film 21 are patterned by a lift-off method using a photoresist 23 as a lift-off material. According to this method, a highly accurate pattern can be obtained without etching.
さらに、第７図と同様のホトレジストパターンを用い、
下部磁性体Ｍ２をめっき法で所望のパターンに堆積し、
保護ｌｌＩ２１をスパッタリング法により形成し、リフ
トオフ法によりパターニングする方法も可能である。Furthermore, using a photoresist pattern similar to that shown in Fig. 7,
Depositing the lower magnetic material M2 in a desired pattern by plating,
It is also possible to form the protective llI21 by a sputtering method and pattern it by a lift-off method.
この方法によればリフトオフする膜が薄いため、プロセ
スが容易となる。According to this method, the film to be lifted off is thin, making the process easier.
第８図に平坦化するためのホトレジストの形成に関する
他の実施例を示す。第８図において、ホトレジスト２２
ａを塗布した後、下部磁性体Ｍ２のパターンの部分を露
光現像により除去する。この後、波長３００ｎｍ以下の
遠紫外線によりホトレジスト２２ａを硬化させ、溶媒に
不溶にする。次に第２のホトレジスト２２ｂを塗布し、
ホトレジスト２２ａと非磁性膜９の隙間を埋め、平坦化
する。この実施例による平坦化によれば、より精度の高
い平坦面が得られ、後工程プロセスが容易となる。また
、ホトレジト２２ａは熱硬化によって不溶化することも
可能である。熱硬化時は流動も伴うので、より平坦な膜
が得られるという特徴も持つ、不溶にする別法としてホ
トレジスト２２ａの表面を金属膜等で覆う方法もあるが
、ホトレジストを硬化する方法の方がより容易である。FIG. 8 shows another embodiment regarding the formation of photoresist for planarization. In FIG. 8, the photoresist 22
After coating a, the patterned portion of the lower magnetic material M2 is removed by exposure and development. Thereafter, the photoresist 22a is cured by deep ultraviolet rays having a wavelength of 300 nm or less to make it insoluble in the solvent. Next, apply a second photoresist 22b,
The gap between the photoresist 22a and the nonmagnetic film 9 is filled and planarized. According to the planarization according to this embodiment, a flat surface with higher precision can be obtained, and post-processing becomes easier. Further, the photoresist 22a can also be made insolubilized by thermosetting. Since fluidization occurs during thermal curing, another method of making it insoluble is to cover the surface of the photoresist 22a with a metal film, etc., which also allows a flatter film to be obtained, but the method of curing the photoresist is better. It's easier.
また、第１図（ｃ）に示したホトレジスト２２及び第８
図に示した第２のホトレジスト２２ｂは光感光性を特に
必要としないので、流動性を持つ樹脂であればホトレジ
ストに限定されない。In addition, the photoresist 22 and the photoresist 8 shown in FIG.
Since the second photoresist 22b shown in the figure does not particularly require photosensitivity, it is not limited to photoresist as long as it is a fluid resin.
ホトレジスト２２ａ、２２ｂを形成した後は平坦性が良
いため、エッチバックにおけるホトレジストとアルミナ
のエッチ速度の比は１：１に近いことが望ましい。After forming the photoresists 22a and 22b, the flatness is good, so it is desirable that the etch rate ratio of the photoresist and alumina in the etch-back is close to 1:1.
本発明によれば、下部磁性体層の幅が上部磁性体層の幅
より狭い薄膜磁気ヘッドを高精度で安定に製造すること
ができた。According to the present invention, a thin film magnetic head in which the width of the lower magnetic layer is narrower than the width of the upper magnetic layer can be manufactured stably with high precision.
第１図は本発明の一実施例の薄膜磁気ヘッドの製造工程
を示す素子の断面図、第２図は従来の薄膜磁気ヘッドの
要部斜視図、第３図は従来の薄膜磁気ヘッドの正面図、
第４図は改良を加えた従来の薄膜磁気ヘッドの正面図、
第５図は本発明の薄膜磁気ヘッドの下部磁性体層の平面
図、第６，７．８図は本発明の他の実施例を説明するた
めの薄膜磁気ヘッドの断面図である。FIG. 1 is a cross-sectional view of an element showing the manufacturing process of a thin-film magnetic head according to an embodiment of the present invention, FIG. 2 is a perspective view of main parts of a conventional thin-film magnetic head, and FIG. 3 is a front view of a conventional thin-film magnetic head. figure,
Figure 4 is a front view of an improved conventional thin film magnetic head.
FIG. 5 is a plan view of the lower magnetic layer of the thin film magnetic head of the present invention, and FIGS. 6, 7 and 8 are sectional views of the thin film magnetic head for explaining other embodiments of the present invention.
Claims (1)
、絶縁層、該絶縁層に周囲を覆われた導電層、上部磁性
体層を所望のパターンに形成する薄膜磁気ヘッドの製造
方法において、上記下部磁性体層の所望のパターンと少
なくともその上部の保護膜を形成する工程、非磁性膜を
設ける工程並びに上記下部磁性体層パターン上の非磁性
膜及び保護膜を除去する工程を有することを特徴とする
薄膜磁気ヘッドの製造方法。 ２、上記下部磁性体層の所望のパターンと少なくともそ
の上部の保護膜を形成する工程は、上記下部磁性体層と
上記保護膜とを順次形成する工程と、両者のパターンを
形成する工程よりなる請求項１記載の薄膜磁気ヘッドの
製造方法。 ３、上記下部磁性体層の所望のパターンと少なくともそ
の上部の保護膜を形成する工程は、上記下部磁性体層を
所望のパターンに形成する工程と少なくとも該下部磁性
体層のパターンの上に上記保護膜を形成する工程よりな
る請求項１記載の薄膜磁気ヘッドの製造方法。 ４、上記保護膜は、酸素又は酸素化合物によりドライエ
ッチング可能な材料よりなる請求項１、２又は３記載の
薄膜磁気ヘッドの製造方法。[Claims] 1. A thin film magnetic head in which at least a lower magnetic layer, a gap thin film, an insulating layer, a conductive layer surrounded by the insulating layer, and an upper magnetic layer are formed on a substrate in a desired pattern. In the manufacturing method, a step of forming a desired pattern of the lower magnetic layer and at least a protective film over the lower magnetic layer, a step of providing a nonmagnetic film, and a step of removing the nonmagnetic film and the protective film on the lower magnetic layer pattern. 1. A method of manufacturing a thin film magnetic head, comprising the steps of: 2. The step of forming the desired pattern of the lower magnetic layer and at least the protective film above the lower magnetic layer includes a step of sequentially forming the lower magnetic layer and the protective film, and a step of forming patterns of both. A method of manufacturing a thin film magnetic head according to claim 1. 3. The step of forming the desired pattern of the lower magnetic layer and at least the protective film on the lower magnetic layer includes the step of forming the lower magnetic layer into the desired pattern and the step of forming the desired pattern of the lower magnetic layer at least on the pattern of the lower magnetic layer. 2. The method of manufacturing a thin film magnetic head according to claim 1, comprising the step of forming a protective film. 4. The method of manufacturing a thin film magnetic head according to claim 1, 2 or 3, wherein the protective film is made of a material that can be dry etched with oxygen or an oxygen compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3610389A JPH02216605A (en) | 1989-02-17 | 1989-02-17 | Production of thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3610389A JPH02216605A (en) | 1989-02-17 | 1989-02-17 | Production of thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02216605A true JPH02216605A (en) | 1990-08-29 |
Family
ID=12460434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3610389A Pending JPH02216605A (en) | 1989-02-17 | 1989-02-17 | Production of thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02216605A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5621596A (en) * | 1994-08-25 | 1997-04-15 | International Business Machines Corporation | Low profile thin film write head |
| JP2007511918A (en) * | 2003-11-18 | 2007-05-10 | エフ イー アイ カンパニ | Method and apparatus for controlling local changes in milling cross section of structure |
-
1989
- 1989-02-17 JP JP3610389A patent/JPH02216605A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5621596A (en) * | 1994-08-25 | 1997-04-15 | International Business Machines Corporation | Low profile thin film write head |
| JP2007511918A (en) * | 2003-11-18 | 2007-05-10 | エフ イー アイ カンパニ | Method and apparatus for controlling local changes in milling cross section of structure |
| US8163145B2 (en) | 2003-11-18 | 2012-04-24 | Fei Company | Method and apparatus for controlling topographical variation on a milled cross-section of a structure |
| JP2012195597A (en) * | 2003-11-18 | 2012-10-11 | Fei Co | Method and apparatus for controlling topographical variation on milled cross-section of structure |
| US9852750B2 (en) | 2003-11-18 | 2017-12-26 | Fei Company | Method and apparatus for controlling topographical variation on a milled cross-section of a structure |
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