JPH02214185A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPH02214185A JPH02214185A JP3543289A JP3543289A JPH02214185A JP H02214185 A JPH02214185 A JP H02214185A JP 3543289 A JP3543289 A JP 3543289A JP 3543289 A JP3543289 A JP 3543289A JP H02214185 A JPH02214185 A JP H02214185A
- Authority
- JP
- Japan
- Prior art keywords
- type
- mask
- ion
- layer
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000012535 impurity Substances 0.000 claims abstract description 46
- 150000002500 ions Chemical class 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims description 28
- 238000005253 cladding Methods 0.000 claims description 12
- 230000003213 activating effect Effects 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 15
- 238000002513 implantation Methods 0.000 abstract description 11
- 230000010355 oscillation Effects 0.000 abstract description 3
- -1 atom ion Chemical class 0.000 abstract description 2
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体レーザの製造方法に関し、特に光・電
子集積回路（以下、０ＥＩＣという）へ組み込むのに適
した横型半導体レーザの製造方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a semiconductor laser, and particularly to a method for manufacturing a horizontal semiconductor laser suitable for being incorporated into an opto-electronic integrated circuit (hereinafter referred to as 0EIC). It is something.
第３図は従来の横方向電流注入半導体レーザ（以下、横
型半導体レーザという）を示す断面図である（古屋氏等
、電子情報通信学会、研究会予稿集０ＱＥ−８６−１６
２ｐ、１１７） 、図において、１は半絶縁性ＧａＡｓ
基板、２はアンドープＡｔ！ＧａＡｓクラッド層、３は
多重量子井戸（ＭＱＷ）活性層、４はアンドープＡｊＧ
ａＡｓクラッド層、７はｎ型不純物（例えばＳｔ）拡散
領域、８はｐ型不純物（例えばＺｎ）拡散領域、９は活
性領域、１０はｎ電極、１１はｐ電極、１２は絶縁膜で
ある。FIG. 3 is a cross-sectional view showing a conventional lateral current injection semiconductor laser (hereinafter referred to as a lateral semiconductor laser) (Mr. Furuya et al., Institute of Electronics, Information and Communication Engineers, Proceedings of a research meeting 0QE-86-16
2p, 117), in the figure, 1 is semi-insulating GaAs
Substrate 2 is undoped At! GaAs cladding layer, 3 is multiple quantum well (MQW) active layer, 4 is undoped AjG
In the aAs cladding layer, 7 is an n-type impurity (for example, St) diffusion region, 8 is a p-type impurity (for example, Zn) diffusion region, 9 is an active region, 10 is an n-electrode, 11 is a p-electrode, and 12 is an insulating film.
次に、従来の横型半導体レーザの動作及び製造方法につ
いて説明する。従来の横型半導体レーザにおいては、多
重量子井戸活性層３がＧａＡｓ井戸層、例えばＡｌ ６
，３ Ｇ ａ １１．？ Ａ Ｓからなる多重量子井戸
から構成されている。そして、表面からｎ型不純物（例
えばＳｉ）及びｐ型不純物（例えばＺｎ）をそれぞれＡ
ｊ！ＧａＡｓクランド層２に到達するように所定の深さ
に拡散することにより、ｎ型不純物拡散領域７及びｎ型
不純物拡散領域８が形成されている。また、それぞれの
不純物拡散領域７，８上には、ｎ電極１０及びｎ電極１
１が取り付けられている。Next, the operation and manufacturing method of a conventional horizontal semiconductor laser will be explained. In a conventional lateral semiconductor laser, the multi-quantum well active layer 3 is a GaAs well layer, for example, Al 6
, 3 Ga 11. ? It is composed of multiple quantum wells consisting of AS. Then, n-type impurities (for example, Si) and p-type impurities (for example, Zn) are removed from the surface by A
j! By diffusing to a predetermined depth so as to reach the GaAs ground layer 2, an n-type impurity diffusion region 7 and an n-type impurity diffusion region 8 are formed. Further, on each impurity diffusion region 7, 8, an n-electrode 10 and an n-electrode 1 are provided.
1 is attached.
一般に、多重量子井戸構造は、ｐ型、ｎ型の不純物を拡
散することにより、無秩序化され実効的に活性層よりも
エネルギーギャップが大きく、屈折率が小さくなること
が知られている。従って、このレーザ構造では、横方向
に屈折率段差が形成されることにより、ｎ型、ｐ型の不
純物拡散領域７．８に挟まれた領域９に光が閉じ込めら
れ、この領域が活性領域となる。In general, it is known that a multi-quantum well structure is disordered by diffusing p-type and n-type impurities, effectively making the energy gap larger and the refractive index smaller than that of the active layer. Therefore, in this laser structure, by forming a refractive index step in the lateral direction, light is confined in the region 9 sandwiched between the n-type and p-type impurity diffusion regions 7.8, and this region becomes the active region. Become.
また、この半導体レーザは、多重量子井戸活性領域９に
横歩行から電子、ホールが注入されるため、各量子井戸
へのキャリアの注入が効率良く行なうことができる。こ
のため、従来の縦方向注入（上方のクラッド層からキャ
リアを注入）型の量子井戸レーザに比べ低閾値化が可能
であるという特徴がある。Further, in this semiconductor laser, since electrons and holes are injected into the multi-quantum well active region 9 from a lateral movement, carriers can be efficiently injected into each quantum well. Therefore, compared to conventional vertical injection (carrier injection from the upper cladding layer) type quantum well laser, it is possible to lower the threshold value.
さらに、表面に段差のないプレーナー構造であり、同一
表面上にｐ、ｎ両電極を取付けできることから０ＥＩＣ
を構成する光デバイスとして適した構造である。Furthermore, it has a planar structure with no steps on the surface, and both p and n electrodes can be installed on the same surface, making it 0EIC.
This structure is suitable for use as an optical device.
次に、第４図（ａ）、 （ｂ）は従来の横型半導体レ
ーザの不純物拡散領域の主要製造工程を示す断面図であ
る。Next, FIGS. 4(a) and 4(b) are cross-sectional views showing the main manufacturing steps of an impurity diffusion region of a conventional lateral semiconductor laser.
まず、同図（ａ）のように所定幅の開口を有するＳｉＯ
，、ＳｉＮ膜等の拡散マスク上に拡散源としてＳｉ蒸着
膜１３を形成した後、所定の温度所定の時間で固相拡散
し、ｎ拡散領域７を形成する。First, as shown in the figure (a), a SiO
,, After forming a Si vapor deposition film 13 as a diffusion source on a diffusion mask such as a SiN film, solid phase diffusion is performed at a predetermined temperature and for a predetermined time to form an n diffusion region 7.
次に、同図（ｂ）の様に同様な材質の拡散マスクを再び
形成し、ｎ拡散領域７との間隔を所定距１１！Ｉ（例え
ば１〜２μｍ以下）に制御して拡散窓を形成する。その
後、Ｚｎ等のｐ型不純物を気相拡散し、ｎ型不純物拡散
領域８を形成する。Next, a diffusion mask made of the same material is formed again as shown in FIG. A diffusion window is formed by controlling the diffusion window to have a thickness of I (for example, 1 to 2 μm or less). Thereafter, a p-type impurity such as Zn is vapor-phase diffused to form an n-type impurity diffusion region 8.
従来の横型半導体レーザは上記のような工程で製造され
ているため、活性領域幅を決定するｐ型不純物拡散領域
とｎ型不純物拡散領域との間隔をマスク合わせにより、
数μｍ以下の小さな値に精度よく制御する必要があり、
低閾値のレーザを再現性１歩留まり良く得ることが困難
であった。Conventional lateral semiconductor lasers are manufactured using the process described above, so the distance between the p-type impurity diffusion region and the n-type impurity diffusion region, which determines the width of the active region, is determined by mask alignment.
It is necessary to precisely control the value to a small value of several μm or less.
It has been difficult to obtain a low threshold laser with good reproducibility and good yield.
本発明は上記のような欠点を解消するためになされたも
ので、活性領域幅を精度良く制御できると共に０ＥＩＣ
に組み込むのに適した低閾値の半導体レーザを再現性２
歩留まり良く得ることができる半導体レーザの製造方法
を得ることを目的とする。The present invention was made in order to eliminate the above-mentioned drawbacks, and it is possible to control the active region width with high accuracy and achieve 0EIC.
A low threshold semiconductor laser suitable for integration into a reproducible 2
An object of the present invention is to obtain a method for manufacturing a semiconductor laser that can be obtained with a high yield.
本発明に係る半導体レーザの製造方法は、活性領域とな
るべき領域上にストライプ状の注入イオン阻止用マスク
を形成する工程と、この注入イオン阻止用マスクのマス
ク長に対し半導体基板の斜め上方から第１の導電型の第
１の不純物イオンを第１のクラッド層又は量子井戸活性
層に到達する深さまでイオン注入する工程と、注入イオ
ン阻止用マスクのマスク長に対し第１の不純物イオンと
反対方向の斜め上方から第２の導電型の第２の不純物イ
オンをイオン注入する工程と、半導体基板に注入した第
１の導電型及び第２の導電型の不純物イオンを活性化、
拡散し量子井戸活性層を無秩序化する熱拡散工程とを有
している。The method for manufacturing a semiconductor laser according to the present invention includes the steps of forming a stripe-shaped mask for blocking implanted ions on a region to become an active region, and a step of forming a stripe-shaped mask for blocking implanted ions from diagonally above the semiconductor substrate with respect to the mask length of the mask for blocking implanted ions. a step of implanting first impurity ions of a first conductivity type to a depth that reaches the first cladding layer or quantum well active layer; a step of ion-implanting second impurity ions of a second conductivity type from diagonally above the direction; activating the impurity ions of the first conductivity type and the second conductivity type implanted into the semiconductor substrate;
and a thermal diffusion process to diffuse and disorder the quantum well active layer.
ストライプ状の注入イオン素子用マスクのマスク長に対
し、第１導電型及び第２導電型の不純物イオンをそれぞ
れ反対方向の斜め上方からイオン注入することにより、
第１導電型及び第２導電型の不純物注入領域を形成する
〔実施例〕
以下、本発明の実施例を図に従って説明する。By implanting impurity ions of the first conductivity type and the second conductivity type from diagonally above in opposite directions to the mask length of the striped implanted ion element mask,
Forming Impurity Implanted Regions of First Conductivity Type and Second Conductivity Type [Example] Examples of the present invention will be described below with reference to the drawings.
第１図は本発明に係る一実施例を示した半導体レーザの
断面図である。図において、第３図と同−部分又は相当
部分には同一符号を付する。５はＧａＡｓコンタクト層
である。また、活性領域９の両側は、ｐ型、ｎ型の不純
物注入、拡散領域が形成され、量子井戸活性層３は無秩
序化されて、実効的なバンドギャップが太き（なること
共に屈折率が小さくなっていることは、第３図の横型半
導体レーザと基本的に同様である。FIG. 1 is a sectional view of a semiconductor laser showing an embodiment of the present invention. In the figure, the same or equivalent parts as in FIG. 3 are given the same reference numerals. 5 is a GaAs contact layer. In addition, p-type and n-type impurity implantation and diffusion regions are formed on both sides of the active region 9, and the quantum well active layer 3 is disordered, resulting in a thicker effective band gap (and a lower refractive index). The fact that it is smaller is basically the same as the horizontal semiconductor laser shown in FIG.
次に、第２図（ａ）〜（ｄ）は第１図に示す半導体レー
ザの主要製造工程を示す断面図である。Next, FIGS. 2(a) to 2(d) are sectional views showing the main manufacturing steps of the semiconductor laser shown in FIG. 1.
以下、この図に従って説明する。The explanation will be given below according to this figure.
まず、第２図（ａ）のように面方位（１００）の半絶縁
性ＧａＡｓ基板ｌ上に順次、ｐ型又は高抵抗クラッド層
２、量子井戸活性１ｉ３．ｎ型又は高抵抗クラッド層４
．ＧａＡｓコンタクト層５をＭＯＣＶＤ法等によりエピ
タキシャル成長する。First, as shown in FIG. 2(a), a p-type or high-resistance cladding layer 2, a quantum well active layer 1i3. N-type or high resistance cladding layer 4
．． A GaAs contact layer 5 is epitaxially grown by MOCVD or the like.
そして、写真製版技術を用いて〔０１１）又は（０１１
）方向にフォトレジストからなるストライプ状の注入イ
オン素子用マスク６を形成する。Then, using photolithography technology, [011] or (011)
) A striped implanted ion element mask 6 made of photoresist is formed in the ) direction.
次に、同図（ｂ）に示すように、ＧａＡｓコンタクト層
５の表面から、ｎ型不純物（例えばＳｉイオン）を注入
イオン素子用マスク６のマスク長に対し図面の左斜め上
方から所定角度でイオン注入する。このときの注入エネ
ルギーは、ＳｉイオンがＡｊ！ＧａＡｓクラッド層２の
途中まで到達するような値に設定する。一般に、イオン
注入では所謂チャンネリング現象を防ぎ注入イオンの結
晶中での分布の再現性を良くするため、基板の垂直方向
に対し５〜１０°傾斜させるが、本実施例においては所
定幅の活性領域を得るため、１０゛以上傾けることが望
ましい。Next, as shown in FIG. 5B, n-type impurities (for example, Si ions) are implanted from the surface of the GaAs contact layer 5 at a predetermined angle from the diagonally upper left side of the drawing with respect to the mask length of the implanted ion element mask 6. Implant ions. The implantation energy at this time is Aj! The value is set to reach the middle of the GaAs cladding layer 2. In general, ion implantation is performed at an angle of 5 to 10 degrees with respect to the vertical direction of the substrate in order to prevent the so-called channeling phenomenon and improve the reproducibility of the distribution of implanted ions in the crystal. In order to obtain a large area, it is desirable to tilt it by 10 degrees or more.
次に、同図（ｃ）のように、同じ注入イオン素子用マス
ク６を用い上記Ｓｉイオンの注入方向と注入イオン素子
用マスク６のマスク長とに対し反対側、即ち図面の右斜
め上方よりｐ型不純物（例えばＺｎイオン）を注入する
。このときの注入エネルギー及び注入量は、ｎ型不純物
拡散領域７がｐ型に反転しないようにするため、Ｓｉ、
Ｚｎ両者のイオンが注入される結晶中において、Ｚｎイ
オンの不純物濃度がＳｉイオンの不純物濃度を上回らな
いよう設定する必要がある。また、同図（ｃ）から判る
ように、両不純物イオンを注入後注入イオン素子用マス
ク６直下の部分には、両不純物原子とも含まれない領域
９が形成されると共に、そのすぐ左側近傍ではＳｉのみ
が存在する領域、右側近傍ではＺｎのみが存在する領域
が形成される。Next, as shown in FIG. 6(c), using the same implantation ion element mask 6, from the side opposite to the implantation direction of the Si ions and the mask length of the implantation ion element mask 6, that is, from the diagonally upper right side of the drawing. A p-type impurity (for example, Zn ions) is implanted. The implantation energy and implantation amount at this time are such that Si,
In the crystal into which both Zn and ions are implanted, it is necessary to set the impurity concentration of Zn ions so that it does not exceed the impurity concentration of Si ions. Furthermore, as can be seen from FIG. 2(c), after implanting both impurity ions, a region 9 that does not contain either of the impurity atoms is formed directly under the implanted ion element mask 6, and in the immediate left vicinity A region where only Si exists, and a region where only Zn exists near the right side are formed.
そして、所定温度、所定時間の熱処理（アニル）を行な
って注入イオンを活性化する。そして、必要に応じ若干
の注入不純物の拡散を行なうことにより、注入イオン素
子用マスク６下の左側近傍にＺｎイオンに重なり合わな
いｎ型不純物拡散領域？ａ、右側近傍にＳｉイオンに重
なり合わないｐ型不純物拡散領域８ａが形成される。こ
れらの領域では、量子井戸活性層３は通常の不純物拡散
と同様無秩序化され、実効的エネルギーギャップは増加
して屈折率が低下する。従って、２つの不純物拡散領域
７，８に挟まれた活性層が活性領域９となる。Then, heat treatment (anilization) is performed at a predetermined temperature and for a predetermined time to activate the implanted ions. Then, by diffusing a small amount of the implanted impurity as necessary, an n-type impurity diffusion region that does not overlap with the Zn ions is formed near the left side under the implanted ion element mask 6. a, a p-type impurity diffusion region 8a that does not overlap with the Si ions is formed near the right side. In these regions, the quantum well active layer 3 is disordered as in normal impurity diffusion, the effective energy gap increases and the refractive index decreases. Therefore, the active layer sandwiched between the two impurity diffusion regions 7 and 8 becomes the active region 9.
次に、同図（ｄ）のようにｎ型電極１０．及びｎ型電極
１１を両不純物拡散領域上のＧａＡｓコンタクト層５上
に形成した後、ＧａＡｓコンタク。Next, as shown in FIG. 2(d), the n-type electrode 10. After forming an n-type electrode 11 on the GaAs contact layer 5 on both impurity diffusion regions, a GaAs contact is formed.
ト層５中に形成されるｐ−ｎ接合を取り除き、リーク電
流を防ぐため、両不純物が注入されていないＧａＡｓコ
ンタクト層５を完全に除去する（この場合のエツチング
マスクとしてｎ電極］０．ｐ電極１１をそのまま用いる
ことができる）ことにより、横型半導体レーザが完成す
る。In order to remove the p-n junction formed in the contact layer 5 and prevent leakage current, the GaAs contact layer 5 in which both impurities are not implanted is completely removed (n electrode as an etching mask in this case). (The electrode 11 can be used as is.) A horizontal semiconductor laser is completed.
このように本実施例における半導体レーザは、ストライ
プ状の注入イオン素子用マスク６に対し、ｐ型及びｎ型
の不純物原子イオンをそれぞれ反対方向の斜め上方から
イオン注入することにより、ｐ型及びｎ型不純物注入領
域を形成するようにしたので、マスク合わせなしに自己
整合的に横型半導体レーザの活性領域幅を決定すること
が可能となる。これにより、再現性９歩留まり良く、さ
らに０ＥＩＣに組み込むことに適した低閾値発振の横型
半導体レーザを得ることができる。In this way, the semiconductor laser in this embodiment is manufactured by implanting p-type and n-type impurity atom ions into the striped implanted ion element mask 6 from diagonally above in opposite directions. Since the type impurity implantation region is formed, it becomes possible to determine the width of the active region of the lateral semiconductor laser in a self-aligned manner without mask alignment. As a result, it is possible to obtain a lateral semiconductor laser with low threshold oscillation, which has good reproducibility and yield, and is suitable for being incorporated into 0EIC.
なお、上記実施例では、ＡｆｆＧａＡｓ系材料を用いた
横型半導体レーザの製造方法への適用例について説明し
たが、ＩｎＧａＡｓ系長波長レーザやＡｌＧａ ＩｎＰ
系可視光レーザに適用してもよい。In the above embodiment, an example of application to a method for manufacturing a horizontal semiconductor laser using an AffGaAs-based material was described, but an InGaAs-based long wavelength laser or an AlGa InP
The present invention may also be applied to visible light lasers.
以上説明したように本発明は、ストライプ状の注入イオ
ン素子用マスクのマスク長に対し、第１導電型及び第２
導電型の不純物イオンをそれぞれ反対方向の斜め上方か
らイオン注入することにより、第１導電型及び第２導電
型の不純物注入領域を形成するようにしたので、マスク
合わせなしに自己整合的に半導体レーザの活性領域幅を
決定することができる。これにより、再現性１歩留まり
良く、さらに０ＢＩＣに組み込むことに適した低閾値発
振の横型半導体レーザを得ることができる。As explained above, the present invention provides a first conductivity type and a second conductivity type with respect to the mask length of a striped implanted ion element mask.
By implanting conductivity type impurity ions diagonally from above in opposite directions, the impurity implantation regions of the first conductivity type and the second conductivity type are formed, so that the semiconductor laser can be formed in a self-aligned manner without mask alignment. The width of the active region can be determined. As a result, it is possible to obtain a lateral semiconductor laser with good reproducibility, high yield, and low threshold oscillation suitable for integration into 0BIC.
第１図は本発明に係る一実施例を示した半導体レーザの
断面図、第２図（ａ）〜（ｄ）は第１図に示す半導体レ
ーザの主要製造工程を示す断面図、第３図は従来の横方
向電流注入半導体レーザを示す断面図、第４図（ａ）、
（ｂ）は従来の横型半導体レーザの不純物拡散領域
の主要製造工程を示す断面図である。
１・・・半絶縁性ＧａＡｓ基板、２・・・アンドープＡ
ｌＧａＡｓクラッド層、３・・・多重量子井戸（ＭＱＷ
）活性層、４・・・アンドープＡｌＧａＡｓクラッド層
、５・・・ＧａＡｓコンタクト層、７・・・ｎ型不純物
拡散領域、８・・・ｐ型不純物拡散領域、９・・・活性
領域、１０・・・ｎ電極、１１・・・ｐ電極。FIG. 1 is a cross-sectional view of a semiconductor laser showing an embodiment of the present invention, FIGS. 2(a) to (d) are cross-sectional views showing main manufacturing steps of the semiconductor laser shown in FIG. 1, and FIG. FIG. 4(a) is a cross-sectional view showing a conventional lateral current injection semiconductor laser;
(b) is a cross-sectional view showing the main manufacturing process of an impurity diffusion region of a conventional horizontal semiconductor laser. 1... Semi-insulating GaAs substrate, 2... Undoped A
lGaAs cladding layer, 3...multiple quantum well (MQW)
) active layer, 4... undoped AlGaAs cladding layer, 5... GaAs contact layer, 7... n-type impurity diffusion region, 8... p-type impurity diffusion region, 9... active region, 10. ...n electrode, 11...p electrode.
Claims (1)
ド層、量子井戸活性層、第２の導電型又は高抵抗の第２
のクラッド層を順次形成してなるダブルヘテロ構造にお
いて、 活性領域となるべき領域上にストライプ状の注入イオン
阻止用マスクを形成する工程と、この注入イオン阻止用
マスクのマスク長に対し、前記半導体基板の斜め上方か
ら第１の導電型の第１の不純物イオンを前記第１のクラ
ッド層又は量子井戸活性層に到達する深さまでイオン注
入する工程と、 前記注入イオン阻止用マスクのマスク長に対し、前記第
１の不純物イオンと反対方向の斜め上方から第２の導電
型の第２の不純物イオンをイオン注入する工程と、 前記半導体基板に注入した前記第１の導電型及び第２の
導電型の不純物イオンを活性化、拡散し、前記量子井戸
活性層を無秩序化する熱拡散工程とを有することを特徴
とする半導体レーザの製造方法。[Claims] A first cladding layer of a first conductivity type or high resistance, a quantum well active layer, a second conductivity type or high resistance layer, and
In a double heterostructure formed by sequentially forming cladding layers of a step of implanting first impurity ions of a first conductivity type from diagonally above the substrate to a depth reaching the first cladding layer or quantum well active layer; , ion-implanting second impurity ions of a second conductivity type from diagonally above in the opposite direction to the first impurity ions, and implanting the first conductivity type and the second conductivity type into the semiconductor substrate. a thermal diffusion step of activating and diffusing impurity ions to disorder the quantum well active layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3543289A JPH02214185A (en) | 1989-02-15 | 1989-02-15 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3543289A JPH02214185A (en) | 1989-02-15 | 1989-02-15 | Manufacture of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02214185A true JPH02214185A (en) | 1990-08-27 |
Family
ID=12441694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3543289A Pending JPH02214185A (en) | 1989-02-15 | 1989-02-15 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02214185A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003264346A (en) * | 2002-03-08 | 2003-09-19 | Sanyo Electric Co Ltd | Nitride based semiconductor laser element |
-
1989
- 1989-02-15 JP JP3543289A patent/JPH02214185A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003264346A (en) * | 2002-03-08 | 2003-09-19 | Sanyo Electric Co Ltd | Nitride based semiconductor laser element |
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