JPH02214145A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02214145A JPH02214145A JP8934738A JP3473889A JPH02214145A JP H02214145 A JPH02214145 A JP H02214145A JP 8934738 A JP8934738 A JP 8934738A JP 3473889 A JP3473889 A JP 3473889A JP H02214145 A JPH02214145 A JP H02214145A
- Authority
- JP
- Japan
- Prior art keywords
- component
- epoxy resin
- parts
- resin composition
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000003822 epoxy resin Substances 0.000 claims abstract description 39
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 39
- 239000000203 mixture Substances 0.000 claims abstract description 32
- IZYZHQOYVLYGRW-UHFFFAOYSA-N 1-(3-aminopropyl)azepan-2-one Chemical compound NCCCN1CCCCCC1=O IZYZHQOYVLYGRW-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000002156 mixing Methods 0.000 claims description 13
- 239000010680 novolac-type phenolic resin Substances 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 abstract description 18
- 229920005989 resin Polymers 0.000 abstract description 10
- 239000011347 resin Substances 0.000 abstract description 10
- 238000007789 sealing Methods 0.000 abstract description 9
- 239000005011 phenolic resin Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 14
- 229920003986 novolac Polymers 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000011256 inorganic filler Substances 0.000 description 6
- 229910003475 inorganic filler Inorganic materials 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- OBETXYAYXDNJHR-UHFFFAOYSA-N 2-Ethylhexanoic acid Chemical compound CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- -1 aminopropyl Chemical group 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- SHZIWNPUGXLXDT-UHFFFAOYSA-N caproic acid ethyl ester Natural products CCCCCC(=O)OCC SHZIWNPUGXLXDT-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007891 compressed tablet Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 239000012260 resinous material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、信頼性、特に耐湿信鯨性に優れた半導体装
置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor device having excellent reliability, particularly moisture resistance.
トランジスタ、ＩＣ，ＬＳＩ等の半導体素子を封止する
ために用いられているエポキシ樹脂組成物としては、従
来からノボラック型フェノール樹脂を硬化剤として使用
したものがあり、このノボラック型フェノール樹脂を用
いて得られる硬化物は他の公知の硬化剤であるアミンや
酸無水物等を使用したものに比べて保存性が良好で、か
つ人体に対して高い安全性を有している。Epoxy resin compositions used to encapsulate semiconductor elements such as transistors, ICs, and LSIs have traditionally used novolac-type phenolic resin as a curing agent. The resulting cured product has better storage stability than those using other known curing agents such as amines and acid anhydrides, and is highly safe for the human body.
しかし・ながら、上記ノボラック型フェノール樹脂を硬
化剤として用いたエポキシ樹脂組成物は、一般に、得ら
れる硬化物の高湿下での絶縁抵抗に難点があり、そのた
め上記エポキシ樹脂組成物を用いて樹脂封止された半導
体装置は、その耐湿信転性に問題を有している。さらに
、このようなエポキシ樹脂組成物は、成形時の成形硬度
が低く成形作業性を著しく損なうという問題も有してい
る。However, epoxy resin compositions using the above-mentioned novolac type phenolic resin as a curing agent generally have a drawback in the insulation resistance of the resulting cured product under high humidity. A sealed semiconductor device has a problem in its moisture resistance and transferability. Furthermore, such epoxy resin compositions also have the problem of low molding hardness during molding, which significantly impairs molding workability.
この発明は、このような事情に鑑みなされたもので、成
形作業性に優れた封止樹脂により樹脂封止され耐湿信軌
性に優れた半導体装置の提供をその目的とする。The present invention was made in view of the above circumstances, and an object of the present invention is to provide a semiconductor device which is resin-sealed with a sealing resin having excellent molding workability and has excellent moisture resistance.
上記の目的を解決するため、この発明の半導体装置は、
下記の（Ａ）〜（Ｃ）成分を含み、（Ｃ）成分の配合量
が（Ｂ）成分１００重量部に対して０．５〜１０重量部
の配合割合になるように設定されているエポキシ樹脂組
成物を用いて半導体素子を封止するという構成をとる。In order to solve the above object, the semiconductor device of the present invention includes:
An epoxy containing the following components (A) to (C), with the amount of component (C) set to be 0.5 to 10 parts by weight per 100 parts by weight of component (B). The structure is such that a semiconductor element is sealed using a resin composition.
（Ａ）エポキシ樹脂。(A) Epoxy resin.
（Ｂ）ノボラック型フェノール樹脂
（Ｃ）１．８−ジアザ−ビシクロ（５，４，０）ウンデ
セン−７およびその誘導体の少なくとも一方（Ｘ）と、
Ｎ−（γ−アミノプロピル）カプロラクタム（Ｙ）とか
らなる混合硬化促進剤であって、上記ＸおよびＹの重量
基準の混合割合Ｘ／Ｙが９５１５〜３０／７０になるよ
うに設定されている硬化促進剤。(B) a novolac type phenolic resin (C) at least one of 1,8-diaza-bicyclo(5,4,0)undecene-7 and its derivatives (X);
A mixed curing accelerator consisting of N-(γ-aminopropyl)caprolactam (Y), in which the weight-based mixing ratio X/Y of the above X and Y is set to be 9515 to 30/70. Hardening accelerator.
すなわち、本発明者らは、上記エポキシ樹脂組成物から
なる封止樹脂の成形性および耐湿性の双方を向上させる
ことを目的として一連の研究を重ねた。その結果、上記
Ｃ成分である１、８−ジアザ−ビシクロ（５，４，Ｏ）
ウンデセン−７およびその誘導体の少なくとも一方とＮ
−（γ−アミノプロピル）カプロラクタムとを特定の割
合で混合したものを硬化促進剤として用いると、成形性
および耐湿性の双方に優れた封止樹脂が得られるように
なることを見出しこの発明に到達した。That is, the present inventors have conducted a series of studies with the aim of improving both the moldability and moisture resistance of a sealing resin made of the above-mentioned epoxy resin composition. As a result, the above C component, 1,8-diaza-bicyclo(5,4,O)
At least one of undecene-7 and its derivatives and N
-(γ-Aminopropyl)caprolactam in a specific ratio was used as a curing accelerator to obtain a sealing resin with excellent moldability and moisture resistance. Reached.
この発明に用いられるエポキシ樹脂組成物は、エポキシ
樹脂（Ａ成分）と、ノボラック型フェノール樹脂（Ｂ成
分）と、特殊な硬化促進剤（Ｃ成分）とを用いて得られ
るものであって、通常、粉末状もしくはそれを打錠した
タブレット状になっている。The epoxy resin composition used in this invention is obtained using an epoxy resin (component A), a novolac type phenol resin (component B), and a special curing accelerator (component C), and is usually , in powder form or compressed tablet form.
上記Ａ成分のエポキシ樹脂としては、１分子中に２個以
上のエポキシ基を有する化合物であれば特に限定するも
のではなく、エピクロルヒドリンとビズフェノールＡや
各種ノボラック類とから合成される樹脂、あるいは脂環
式エポキシ樹脂等があげられる。特に好適なのは、高温
での特性に優れているノボラック型エポキシ樹脂であり
、なかでもエポキシ当量１８０〜２５０、軟化点６０〜
１１０°Ｃのものを用いるのが好ましい。The epoxy resin of component A is not particularly limited as long as it is a compound having two or more epoxy groups in one molecule, and resins synthesized from epichlorohydrin and bisphenol A or various novolacs, or resins Examples include cyclic epoxy resins. Particularly suitable are novolak-type epoxy resins that have excellent properties at high temperatures, with an epoxy equivalent of 180-250 and a softening point of 60-250.
It is preferable to use one with a temperature of 110°C.
上記Ｂ成分のノボラック型フェノール樹脂は、Ａ成分の
エポキシ樹脂の硬化剤として作用するものであり、フェ
ノール、クレゾール、ビスフェノールＡ型等のフェノー
ル類とホルムアルデヒド等とを酸性触媒下で縮合させて
得られる樹脂状物である。上記ノボラック型フェノール
樹脂としては、特に水酸基当量が１００〜１５０、軟化
点６０〜１１０“Ｃのものを用いるのが好ましい。The above novolac type phenolic resin, component B, acts as a curing agent for the epoxy resin, component A, and is obtained by condensing phenols such as phenol, cresol, and bisphenol A type with formaldehyde, etc. under an acidic catalyst. It is a resinous material. As the above-mentioned novolak type phenol resin, it is particularly preferable to use one having a hydroxyl equivalent of 100 to 150 and a softening point of 60 to 110"C.
上記Ａ成分のエポキシ樹脂とＢ成分のノボラック型フェ
ノール樹脂との配合比は、上記エポキシ樹脂中に含まれ
るエポキシ基１当量当たりフェノール性水酸基が０．５
〜２．０当量となるように配合することが好適であり、
特に好適なのは１．０当量である。The blending ratio of the epoxy resin as component A and the novolac type phenol resin as component B is such that the phenolic hydroxyl group is 0.5 per equivalent of epoxy group contained in the epoxy resin.
It is suitable to blend so that the amount is ~2.0 equivalents,
Particularly preferred is 1.0 equivalent.
上記Ａ成分のエポキシ樹脂およびＢ成分のノボラック型
フェノール樹脂とともに用いるＣ成分の特殊な硬化促進
剤は、１．８−ジアザ−ビシクロ（５，４，Ｏ）ウンデ
セン−７（以下ｒＤＢＵ。The special curing accelerator of component C used together with the epoxy resin of component A and the novolac type phenol resin of component B is 1,8-diaza-bicyclo(5,4,O)undecene-7 (hereinafter referred to as rDBU).
と略称す）およびその誘導体の少なくとも一方と、Ｎ−
（γ−アミノプロピル）カプロラクタムとを混合して得
られるものである。) and its derivatives; and at least one of N-
(γ-aminopropyl)caprolactam.
上記ＤＢＵおよびその誘導体は、樹脂組成物の硬化物の
絶縁抵抗を向上させ、これを用いて半導体素子を樹脂封
止して得られる半導体装置の耐湿信顛性を向上させるが
、その反面硬化物の成形硬度を低下させるという性質を
有している。なお、上記ＤＢＵの誘導体としては、ＤＢ
Ｕのフェノール塩、２−エチルヘキサン酸塩、炭酸塩等
があげられる。The above-mentioned DBU and its derivatives improve the insulation resistance of the cured product of the resin composition and improve the moisture resistance of the semiconductor device obtained by resin-sealing the semiconductor element using the DBU, but on the other hand, the cured product It has the property of reducing the molding hardness of. In addition, as the derivative of DBU mentioned above, DB
Examples include phenol salt, 2-ethylhexanoate, carbonate, etc. of U.
また、上記Ｎ−（ｒ−アミノプロピル）カプロラクタム
は、これ単独では硬化促進効果は得られないが、上記Ｄ
ＢＵもしくはその誘導体にＮ−（Ｔ−アミノプロピル）
カプロラクタムを加えることによりＮ−（ｒ−アミノプ
ロピル）カプロラクタムがＡ成分のエポキシ樹脂と成形
時に反応し、成形硬度を高めるという性質を有している
。In addition, the above N-(r-aminopropyl)caprolactam does not have a curing accelerating effect by itself, but the above D
N-(T-aminopropyl) in BU or its derivative
By adding caprolactam, N-(r-aminopropyl)caprolactam reacts with the epoxy resin of component A during molding, and has the property of increasing molding hardness.
上記ＤＢＵおよびその誘導体の少なくとも一方（Ｘ）と
Ｎ−（ｒ−アミノプロピル）カプロラクタム（Ｙ）の混
合割合は、重量基準でＸ／Ｙ＝９５１５〜３０／７０の
範囲に設定する必要がある。The mixing ratio of at least one of the DBU and its derivatives (X) and N-(r-aminopropyl)caprolactam (Y) needs to be set in the range of X/Y=9515 to 30/70 on a weight basis.
好適なのは、７５／２５〜５０１５０である。すなわち
、ＤＢＵおよびその誘導体の少なくとも一方とＮ−（ｒ
−アミノプロピル）カプロラクタムとの混合割合が上記
範囲外だと、得られるエポキシ樹脂組成物の耐湿性およ
び成形作業性の双方を満足させることができないからで
ある。The preferred range is 75/25 to 50150. That is, at least one of DBU and its derivatives and N-(r
This is because if the mixing ratio with caprolactam (aminopropyl) is outside the above range, the resulting epoxy resin composition will not be able to satisfy both moisture resistance and molding workability.
そして、このようなＣ成分である特殊な硬化促進剤の配
合量は、Ｂ成分のノボラック型フェノール樹脂１００重
量部（以下「部」と略す）に対して０．５〜１０部の範
囲に設定する必要がある。特に好適なのは１．０〜４．
０部である。すなわち、上記Ｃ成分の特殊な硬化促進剤
の配合量が０．５部未満であれば得られるエポキシ樹脂
組成物の硬化速度が遅くなり、その結果成形作業性や硬
化物特性の劣化がみられるようになり、逆に１０部を超
えると硬化速度が速くなり、封止樹脂の未充填部分が発
生したりする成形不良や半導体装置製造時にエポキシ樹
脂組成物の一部がゲル化する等の問題が生じるからであ
る。The amount of the special curing accelerator, which is component C, is set in the range of 0.5 to 10 parts per 100 parts by weight (hereinafter abbreviated as "parts") of the novolac type phenolic resin, which is component B. There is a need to. Particularly preferred is 1.0 to 4.
It is 0 copies. That is, if the amount of the special curing accelerator (C component) is less than 0.5 parts, the curing speed of the resulting epoxy resin composition will be slow, resulting in deterioration of molding workability and properties of the cured product. On the other hand, if it exceeds 10 parts, the curing speed increases, leading to problems such as molding defects such as unfilled parts of the sealing resin and gelation of a part of the epoxy resin composition during semiconductor device manufacturing. This is because
また、この発明に用いられるエポキシ樹脂組成物には、
上記Ａ−Ｃ成分以外にも、必要に応じて従来より用いら
れているその他の添加剤を配合してもよい。In addition, the epoxy resin composition used in this invention includes:
In addition to the above-mentioned components A to C, other conventionally used additives may be added as necessary.
上記その他の添加剤としては、例えば無機質充填剤、難
燃剤、シランカップリング剤のような無機質充填剤の表
面処理剤１Ｍ型剤、Ｒ料等があげられる。Examples of the other additives include inorganic fillers, flame retardants, surface treatment agents for inorganic fillers such as silane coupling agents, 1M type agents, and R materials.
上記無機質充填剤としては、シリカ、アルミナ、タルク
、クレー、ガラス繊維等があげられる。Examples of the inorganic filler include silica, alumina, talc, clay, and glass fiber.
好ましくは溶融性もしくは結晶性シリカが用いられる。Preferably, fused or crystalline silica is used.
また、上記無機質充填剤としては、粒径が１５０μｍ以
下でかつ５０〜１５０μ鴎の範囲のものを無機質充填剤
全体の１０重量％（以下ｒ％」と略す）以下含有するも
のが好適に用いられ、さらに無機質充填剤の配合量はエ
ポキシ樹脂組成物全体中３０〜８０％の範囲になるよう
に設定することが好ましい。In addition, as the above-mentioned inorganic filler, one having a particle size of 150 μm or less and containing 10% by weight (hereinafter abbreviated as “r%”) of the total inorganic filler of particles in the range of 50 to 150 μm is preferably used. Furthermore, it is preferable that the amount of the inorganic filler is set in the range of 30 to 80% of the total epoxy resin composition.
上記難燃剤としては、酸化アンチモン、ハロゲン化物、
リン化合物等があげられる。The above flame retardants include antimony oxide, halides,
Examples include phosphorus compounds.
この発明に用いるエポキシ樹脂組成物は、例えばつぎの
ようにして製造することができる。すなわち、上記Ａ−
Ｃ成分ならびに上記その他の添加剤を適宜配合し、この
混合物をミキシングロール機等の混練機に掛は加熱状態
で混練して溶融混合し、これを室温に冷却した後公知の
手段により粉砕し、必要に応じて打錠するという一連の
工程により、目的とするエポキシ樹脂組成物を得ること
ができる。The epoxy resin composition used in this invention can be produced, for example, as follows. That is, the above A-
Component C and the other additives mentioned above are appropriately blended, this mixture is kneaded in a kneading machine such as a mixing roll machine in a heated state to melt and mix, and after cooling this to room temperature, it is pulverized by known means, The desired epoxy resin composition can be obtained through a series of steps including tableting as necessary.
このようなエポキシ樹脂組成物を用いての半導体素子の
封止は、特に制限するものではなく、通常のトランスフ
ァー成形等の公知のモールド方法により行うことができ
る。The encapsulation of a semiconductor element using such an epoxy resin composition is not particularly limited, and can be performed by a known molding method such as ordinary transfer molding.
このようにして得られる半導体装置は、エポキシ樹脂組
成物中に含まれる特殊な硬化促進剤（Ｃ成分）の作用に
より、成形作業性に優れた封止樹脂により樹脂封止され
ており、極めて優れた耐湿信転性を備えている。The semiconductor device obtained in this way is resin-sealed with a sealing resin that has excellent molding workability due to the action of a special curing accelerator (component C) contained in the epoxy resin composition, and is extremely superior. It has excellent moisture resistance.
以上のように、この発明の半導体装置は、特殊な硬化促
進剤が特定の割合に含有されている特殊なエポキシ樹脂
組成物を用いて封止されており、その封止樹脂が成形性
および耐湿性に冨んでいるため、優れた耐湿信顛性を有
しており、また性能的にも問題がない。As described above, the semiconductor device of the present invention is encapsulated using a special epoxy resin composition containing a special curing accelerator in a specific ratio, and the encapsulation resin has excellent moldability and moisture resistance. Because it is rich in properties, it has excellent moisture resistance and no performance problems.
つぎに、実施例について比較例と併せて説明する。Next, examples will be described together with comparative examples.
〔実施例１〜４、比較例１〜４〕
クレゾール型エポキシ樹脂（エポキシ当量１９５）１０
０部、フェノールノボラック（軟化点８０°Ｃ）５０部
、ＤＢＵとＮ−（γ−アミノプロピル）カプロラクタム
とからなる硬化促進剤２．５部、カーボンブラック２部
、無定形シリカ粉末３５０部、シランカップリング剤（
Ａ−１８６，日本ユニカー社製）１．８部およびカルナ
バワックス２部を配合し、７０〜８０°Ｃの熱ロールに
より混練した後、冷却し粉砕して１０メツシュパス品と
し、目的とする粉末状のエポキシ樹脂組成物を得た。な
お、上記硬化促進剤中に占めるＤＢＵの割合を下記の第
１表に示すような割合に変えた（ゲル化時間はいずれも
１５０°Ｃで３０〜６０秒であった）。[Examples 1 to 4, Comparative Examples 1 to 4] Cresol type epoxy resin (epoxy equivalent: 195) 10
0 parts, 50 parts of phenol novolak (softening point 80°C), 2.5 parts of hardening accelerator consisting of DBU and N-(γ-aminopropyl)caprolactam, 2 parts of carbon black, 350 parts of amorphous silica powder, silane Coupling agent (
Blend 1.8 parts of A-186 (manufactured by Nippon Unicar Co., Ltd.) and 2 parts of carnauba wax, knead with a heated roll at 70 to 80°C, cool and crush to make a 10-mesh pass product, and prepare the desired powder. An epoxy resin composition was obtained. The proportion of DBU in the curing accelerator was changed as shown in Table 1 below (gelation time was 30 to 60 seconds at 150°C).
〔実施例５〕
ＤＢＵとＮ−Ｃｒ−アミノプロピル）カプロラクタムと
からなる硬化促進剤の配合量２．５部を０゜５部に変え
た。それ以外は実施例２と同様にして粉末状のエポキシ
樹脂組成物を得た。[Example 5] The blending amount of the curing accelerator consisting of DBU and N-Cr-aminopropyl) caprolactam was changed from 2.5 parts to 0.5 parts. A powdered epoxy resin composition was obtained in the same manner as in Example 2 except for the above.
〔実施例６〕
ＤＢＵとＮ−（γ−アミノプロピル）カプロラクタムと
からなる硬化促進剤の配合量２．５部を４部に変えた。[Example 6] The blending amount of the curing accelerator consisting of DBU and N-(γ-aminopropyl)caprolactam was changed from 2.5 parts to 4 parts.
それ以外は実施例２と同様にして粉末状のエポキシ樹脂
組成物を得た。A powdered epoxy resin composition was obtained in the same manner as in Example 2 except for the above.
〔実施例７〕
フェノールノボラック（軟化点８０°Ｃ）５０部をタレ
ゾールノボラック（軟化点８２°Ｃ）５８部に変えた。[Example 7] 50 parts of phenol novolac (softening point: 80°C) was replaced with 58 parts of talesol novolak (softening point: 82°C).
それ以外は実施例２と同様にして粉末状のエポキシ樹脂
組成物を得た。A powdered epoxy resin composition was obtained in the same manner as in Example 2 except for the above.
（以下余白）
第−ｍ−１−−−表
※： ＤＢＵ／ （ＤＢＵ＋ （Ｎ−（γ−アミノブロ
ル）カプロラクタム））Ｘ１００で示される値である。(The following is a blank space) Table -m-1*: Values shown by DBU/ (DBU+ (N-(γ-aminobrol) caprolactam))X100.
このようにして得られたエポキシ樹脂組成物の体積抵抗
率、成形硬度を調べ下記の第２表に示した。また、半導
体素子を樹脂封止して半導体装置を組み立て耐湿特性を
調べ下記の第２表に併せて示した。なお、上記各試験の
評価は下記に示す方法により測定した。The volume resistivity and molding hardness of the epoxy resin composition thus obtained were investigated and shown in Table 2 below. In addition, a semiconductor device was assembled by resin-sealing the semiconductor element, and the moisture resistance characteristics were investigated and shown in Table 2 below. In addition, the evaluation of each of the above tests was measured by the method shown below.
〈体積抵抗率〉
エポキシ樹脂組成物を加熱硬化させて得られた硬化物の
１５０°Ｃ下の体積抵抗率を測定した。<Volume resistivity> The volume resistivity at 150°C of the cured product obtained by heating and curing the epoxy resin composition was measured.
〈成形硬度〉 温度１７５°Ｃでの硬度をショアθ硬度計で測定した。<Molding hardness> The hardness at a temperature of 175°C was measured using a Shore θ hardness meter.
く耐湿特性〉
作製した半導体装置を、１３５°Ｃ×８５％ＲＨの雰囲
気下で１０００時間２０Ｖの直流電圧を加えてアルミニ
ウム電極の腐食・による断線が生じたものを不良とした
。下記の第２表中の数値は全試験個数４０個中の不良数
を示したものである。Moisture Resistance Characteristics> The fabricated semiconductor devices were subjected to a DC voltage of 20 V for 1000 hours in an atmosphere of 135° C. and 85% RH, and those in which wire breakage occurred due to corrosion of the aluminum electrodes were judged as defective. The numerical values in Table 2 below indicate the number of defects out of a total of 40 test pieces.
（以下余白）
遍ニー−λ−−」及
第２表の結果から、実施例品は体積抵抗率、耐湿特性の
双方に優れており、成形硬度も高いことから成形作業性
にも優れていることがわかる。(Left below) From the results in Table 2, the example product has excellent volume resistivity and moisture resistance, and has high molding hardness, so it is also excellent in molding workability. I understand that.
特許出願人 日東電工株式会社 代理人 弁理士 西 藤 征 彦Patent applicant: Nitto Denko Corporation Agent: Patent Attorney Yukihiko Nishifuji
Claims (2)
配合量が（Ｂ）成分１００重量部に対して０．５〜１０
重量部の配合割合になるように設定されているエポキシ
樹脂組成物を用いて半導体素子を封止してなる半導体装
置。 （Ａ）エポキシ樹脂。 （Ｂ）ノボラック型フェノール樹脂 （Ｃ）１、８−ジアザ−ビシクロ（５、４、０）ウンデ
セン−７およびその誘導体の少 なくとも一方（Ｘ）と、Ｎ−（γ−アミ ノプロピル）カプロラクタム（Ｙ）とか らなる混合硬化促進剤であつて、上記Ｘ およびＹの重量基準の混合割合Ｘ／Ｙが ９５／５〜３０／７０になるように設定 されている硬化促進剤。(1) Contains the following components (A) to (C), and the blending amount of component (C) is 0.5 to 10 parts by weight per 100 parts by weight of component (B).
A semiconductor device in which a semiconductor element is encapsulated using an epoxy resin composition whose blending ratio is set to be in parts by weight. (A) Epoxy resin. (B) Novolac type phenolic resin (C) 1,8-diaza-bicyclo(5,4,0) undecene-7 and at least one of its derivatives (X) and N-(γ-aminopropyl)caprolactam (Y) A curing accelerator mixture consisting of the following, wherein the mixing ratio X/Y of X and Y on a weight basis is set to be from 95/5 to 30/70.
配合量が（Ｂ）成分１００重量部に対して０．５〜１０
重量部の配合割合になるように設定されている半導体封
止用エポキシ樹脂組成物。 （Ａ）エポキシ樹脂。 （Ｂ）ノボラック型フェノール樹脂 （Ｃ）１、８−ジアザ−ビシクロ（５、４、０）ウンデ
セン−７およびその誘導体の少 なくとも一方（Ｘ）と、Ｎ−（γ−アミ ノプロピル）力プロラクタム（Ｙ）とか らなる混合硬化促進剤であつて、上記Ｘ およびＹの重量基準の混合割合Ｘ／Ｙが ９５／５〜３０／７０になるように設定 されている硬化促進剤。(2) Contains the following components (A) to (C), and the blending amount of component (C) is 0.5 to 10 parts by weight per 100 parts by weight of component (B).
An epoxy resin composition for semiconductor encapsulation whose blending ratio is set to be in parts by weight. (A) Epoxy resin. (B) Novolac type phenolic resin (C) At least one of 1,8-diaza-bicyclo(5,4,0)undecene-7 and its derivatives (X) and N-(γ-aminopropyl)prolactam ( Y), wherein the mixing ratio X/Y of X and Y on a weight basis is set to be from 95/5 to 30/70.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8934738A JPH02214145A (en) | 1989-02-14 | 1989-02-14 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8934738A JPH02214145A (en) | 1989-02-14 | 1989-02-14 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02214145A true JPH02214145A (en) | 1990-08-27 |
Family
ID=12422660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8934738A Pending JPH02214145A (en) | 1989-02-14 | 1989-02-14 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02214145A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020063404A (en) * | 2018-10-19 | 2020-04-23 | 日立化成株式会社 | Epoxy resin composition and electronic component device |
-
1989
- 1989-02-14 JP JP8934738A patent/JPH02214145A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020063404A (en) * | 2018-10-19 | 2020-04-23 | 日立化成株式会社 | Epoxy resin composition and electronic component device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH05283560A (en) | Semiconductor sealing epoxy resin composition and semiconductor device using it | |
| JPH0657740B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JPH02214145A (en) | Semiconductor device | |
| JPS6182438A (en) | Manufacture of semiconductor device | |
| JP2000230110A (en) | Epoxy resin composition and semiconductor device | |
| JPH0567701A (en) | Semiconductor device | |
| JPH11116775A (en) | Epoxy resin composition for semiconductor sealing and production thereof | |
| JP2690795B2 (en) | Epoxy resin composition | |
| JPH04296046A (en) | Resin-sealed semiconductor device | |
| JP2000281876A (en) | Epoxy resin composition and semiconductor device | |
| JPH02140959A (en) | Semiconductor device | |
| JP2885345B2 (en) | Semiconductor device | |
| JPH0611783B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JP2000281869A (en) | Epoxy resin composition and semiconductor device | |
| JPH10182831A (en) | Epoxy resin composition | |
| JP2534330B2 (en) | Semiconductor device | |
| JP2716962B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JPH0291965A (en) | Semiconductor device | |
| JPH03131057A (en) | Semiconductor device | |
| JP3093050B2 (en) | Epoxy resin composition | |
| JPS63156345A (en) | Semiconductor device | |
| JPH0739471B2 (en) | Sealing resin composition | |
| JPH04348059A (en) | Resin composition for semiconductor-sealing | |
| JPS6296522A (en) | Sealing resin composition | |
| JPH0669379A (en) | Semiconductor device |