JPH02207521A - Aligner - Google Patents
AlignerInfo
- Publication number
- JPH02207521A JPH02207521A JP1028147A JP2814789A JPH02207521A JP H02207521 A JPH02207521 A JP H02207521A JP 1028147 A JP1028147 A JP 1028147A JP 2814789 A JP2814789 A JP 2814789A JP H02207521 A JPH02207521 A JP H02207521A
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- projection optical
- wafer
- detection means
- bit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 42
- 238000001514 detection method Methods 0.000 claims abstract description 36
- 238000012937 correction Methods 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 39
- 238000010586 diagram Methods 0.000 description 10
- 238000001444 catalytic combustion detection Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 7
- 238000005452 bending Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 241000257465 Echinoidea Species 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は露光装置に関し、特にＩＣ，ＬＳＩ等の半導体
集積回路の製作において、マスク若しくばレチクル等の
第１物体面上の回路パターンを投影光学系によりウニ八
等の第２物体面上に、例えば第２物体又はその近傍に設
けた基準面を利用して高鯖度に焦点合わせをして投影露
光する際に好適な自動焦点制御手段を有した縮少投影型
の露光装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an exposure apparatus, and in particular, in the production of semiconductor integrated circuits such as ICs and LSIs, the present invention relates to an exposure apparatus that is used to produce a circuit pattern on a first object surface such as a mask or reticle. Automatic focus control suitable for performing projection exposure using a projection optical system on a second object surface of a sea urchin, etc. by focusing with a high degree of precision, for example, using a reference plane provided at or near the second object. The present invention relates to a reduction projection type exposure apparatus having means.
（従来の技術）
近年、微細な回路パターンを露光転写する装置として縮
小投影型の露光装置（所謂ステッパー）がＩＣやＬＳＩ
等の半導体製造装置の生産現場に多数使用されてきた。(Prior Art) In recent years, reduction projection exposure devices (so-called steppers) have been used to transfer fine circuit patterns by exposure to ICs and LSIs.
It has been used in many production sites for semiconductor manufacturing equipment such as.
この縮小型の露光装置はレチクル（マスク）に描かれた
回路パターンの像を投影光学系により縮小してウェハ上
のフォトレジスト（感光剤）の層に投影露光するもので
ある。This reduction type exposure apparatus uses a projection optical system to reduce the image of a circuit pattern drawn on a reticle (mask), and projects and exposes the image onto a layer of photoresist (photosensitive material) on a wafer.
最近は、投影露光する回路パターンの更なる微細化及び
高集積化に伴い、より高分解能、高精度な投影露光ので
きる露光装置が要求されている。Recently, with the further miniaturization and higher integration of circuit patterns to be projected exposed, there has been a demand for an exposure apparatus that can perform projection exposure with higher resolution and higher precision.
一般に投影露光する回路パターンの焼付は線幅の微細化
の為に例えば露光光の波長を短く、又は投影光学系の開
口数を大きくすると、それに伴い焦点深度か比例、又は
２乗に比例して小さくなってくる。そうすると、例えば
投影光学系を構成する硝材の屈折率が周囲の温度や空気
の気圧等の変化により変わり焦点位置くビット面）が変
動してくるという問題点が生じてくる。In general, when printing a circuit pattern by projection exposure, for example, if the wavelength of the exposure light is shortened or the numerical aperture of the projection optical system is increased in order to make the line width finer, the depth of focus increases proportionally or squarely. It's getting smaller. In this case, a problem arises in that, for example, the refractive index of the glass material constituting the projection optical system changes due to changes in ambient temperature, air pressure, etc., and the focal position (bit surface) changes.
又ウェハは平面加工技術の点からある程度の厚さと曲り
のバラツキを有している。通常ウェハの曲りについては
平面度１μｍ以下に加工されたウェハーチャック面上に
ウェハを吸着固定することにより平面矯正を行っている
。しかしながらウェハに厚さのバラツキがあるときはこ
れを矯正することができない。Furthermore, wafers have some degree of variation in thickness and curvature due to flat processing technology. Normally, wafer bending is corrected by suctioning and fixing the wafer onto a wafer chuck surface that has been processed to have a flatness of 1 μm or less. However, if there is variation in the thickness of the wafer, this cannot be corrected.
そこで従来は投影光学系と所定の位置に関係づけたビッ
ト検出器を露光装置内の一部に設け、投影光学系のビッ
ト面は固定のものとして、その位置にウニへ面がくるよ
うにして位置決めを行っていた。Therefore, in the past, a bit detector associated with the projection optical system and a predetermined position was installed in a part of the exposure apparatus, and the bit surface of the projection optical system was fixed, so that the surface was placed at that position. I was positioning.
このビット検出器を用いた位置決め方法は間接的にビッ
ト面を検出するものであり、直接的にビット面を検出し
ていない。この為、例えば温度変動や気圧変動等の要因
によりビット検出器の取付面から実際に投影された回路
パターン像面までの機械的な距離及び投影光学系のビッ
ト面が変化したり又、露光光の吸収により投影光学系の
光学的性質が変化し、ビット面が変動したりして高い焼
付は解像力を得るのが大変難しいという問題点があった
。This positioning method using a bit detector indirectly detects the bit surface and does not directly detect the bit surface. For this reason, the mechanical distance from the mounting surface of the bit detector to the actually projected circuit pattern image surface and the bit surface of the projection optical system may change due to factors such as temperature fluctuations and atmospheric pressure fluctuations, or the exposure light The problem is that the optical properties of the projection optical system change due to the absorption of , causing the bit surface to fluctuate, making it very difficult to obtain high resolution with high printing.
特にこのような問題点は露光光としてｇ線を用いた露光
装置はもとより例えば波長２４８ｎｍの光を放射するエ
キシマレーザ−を用いた露光装置においては前記波長と
焦点深度の関係により、より重要な問題点となっている
。In particular, this problem is a more important problem not only in exposure equipment that uses G-rays as exposure light, but also in exposure equipment that uses an excimer laser that emits light with a wavelength of 248 nm, due to the relationship between the wavelength and depth of focus. It is a point.
（発明か解決しようとする問題点）
本発明はレチクル面上のパターンを投影光学系を介して
ウニ八面上に投影し、露光する際、周囲の温度や気圧等
の環境条件が変化し投影光学系の焦点位置が変動したり
、又ウェハに厚さや曲り等のバラツキがあっても常に高
精度に焦点位置にウェハを位置させることができ、高い
解像力が容易に得られる露光装置の提供を目的とする。(Problems to be Solved by the Invention) The present invention projects a pattern on the reticle surface onto the eight surfaces of the sea urchin through a projection optical system, and when exposing the pattern, environmental conditions such as surrounding temperature and atmospheric pressure change. To provide an exposure apparatus that can always position a wafer at a focal position with high precision even if the focal position of an optical system fluctuates or there are variations in wafer thickness, bending, etc., and can easily obtain high resolution. purpose.
（問題点を解決するための手段）
第１物体面のパターンを投影光学系を介して第２物体面
上に投影露光する露光装置において、該第２物体面と該
第２物体面又はその近傍に設けた基準面との相対的な高
さを検出する第１検出手段と該投影光学系による該第１
物体面のパターン投影像のビット位置を検出する第２検
出手段と該第１、第２検出手段からの出力信号を利用し
て、該第２物体面の該投影光学系光軸方向における最適
位置を求める演算手段と該演算手段からの出力信号に基
づいて該第２物体の光軸方向の位置制御を行う補正駆動
手段とを有していることである。(Means for solving the problem) In an exposure apparatus that projects and exposes a pattern on a first object surface onto a second object surface via a projection optical system, the second object surface and the second object surface or the vicinity thereof are provided. a first detection means for detecting a height relative to a reference plane provided in the first detection means;
A second detection means for detecting a bit position of a pattern projected image on the object plane and output signals from the first and second detection means are used to determine the optimum position of the second object plane in the optical axis direction of the projection optical system. and a correction driving means for controlling the position of the second object in the optical axis direction based on the output signal from the calculating means.
（実施例）
第１図は本発明の一実施例の露光装置の要部概略図であ
る。(Embodiment) FIG. 1 is a schematic diagram of the main parts of an exposure apparatus according to an embodiment of the present invention.
同図において１１は光源で例えばエキシマレーザ−１Ｈ
ｅ−Ｃｄレーザー、超高圧水銀灯等である。光源１１か
らの光束はミラー１０．９で反射させた後照明系８に入
射している。照明系８はミラー９からの光束をミラー７
を介して第１物体としてのレチクル又はマスク（以下「
レチクル」という。）を照射している。そして該レチク
ル１面上の回路パターンを投影光学系３によって第２物
体としてのウェハ２面上に投影露光している。In the figure, 11 is a light source, for example, an excimer laser 1H.
e-Cd laser, ultra-high pressure mercury lamp, etc. The light beam from the light source 11 is reflected by a mirror 10.9 and then enters the illumination system 8. The illumination system 8 directs the light beam from the mirror 9 to the mirror 7.
A reticle or mask (hereinafter "
It's called a reticle. ) is being irradiated. Then, the circuit pattern on the first surface of the reticle is projected and exposed onto the second surface of the wafer as a second object by the projection optical system 3.
ウェハ２面上には感光体としてのレジストか塗布されて
おり、ウェハチャック４により吸着支持されている。５
は補正駆動手段としてのθ−Ｚステージでありウェハチ
ャック４を投影光学系３の光軸方向であるビット方向（
Ｚ方向）及び回転方向に駆動制御している。６はＸＹス
テージでありウェハチャック４をＸ方向とＹ方向に駆動
制御している。A resist serving as a photoreceptor is coated on the surface of the wafer 2, and the wafer chuck 4 supports the wafer by suction. 5
is a θ-Z stage as a correction drive means, which moves the wafer chuck 4 in the bit direction (which is the optical axis direction of the projection optical system 3).
The drive is controlled in the Z direction) and rotational direction. Reference numeral 6 denotes an XY stage that drives and controls the wafer chuck 4 in the X and Y directions.
１０１は第１検出手段であり、検出用の光束を発する投
光部１２と被測定面からの反射光を受光する受光部１３
とを有しており、ウェハ２面のＺ方向の高さとθ−Ｚス
テージ５上に設けた基準面２２との２方向の相対的な高
さを検出している。Reference numeral 101 denotes a first detection means, which includes a light projecting section 12 that emits a light beam for detection, and a light receiving section 13 that receives reflected light from the surface to be measured.
The relative height in two directions between the height of the wafer 2 surface in the Z direction and the reference plane 22 provided on the θ-Z stage 5 is detected.
同図はウェハ２面上の高さを検出している場合を示して
おり、基準面２２の高さを検出するときはＸＹステージ
６を駆動させて基準面２２が投影光学系３による後述す
るビット検出用マークの投影面に位置するようにして行
っている。The figure shows a case in which the height on the wafer 2 surface is being detected. When detecting the height of the reference plane 22, the XY stage 6 is driven and the reference plane 22 is projected by the projection optical system 3, which will be described later. This is done by positioning it on the projection plane of the bit detection mark.
尚、同図においてはウェハ２面と基準面２２の高さは路
間−となるようにして構成されている。In the figure, the height of the wafer 2 and the reference surface 22 are set to be at a distance of -.
そしてこれらの高さ方向（Ｚ方向）の検出方法としては
例えば特開昭６２−１４０４１８号公報で示したような
方法により行っている。As a method for detecting these in the height direction (Z direction), for example, a method as disclosed in Japanese Patent Laid-Open No. 140418/1984 is used.
即ちウェハ２面上からの光束の反射点と受光素子（ＣＯ
Ｄ）上の入射点とが結像関係となるようにし、ウェハ２
の上下方向の位置ずれを受光素子面上に入射する光束の
入射位置として検出し、これにより高さ方向の位置を検
出している。That is, the reflection point of the light beam from the 2nd surface of the wafer and the light receiving element (CO
D) The incident point on the wafer 2 should be in an imaging relationship with the incident point on the wafer 2.
The positional deviation in the vertical direction is detected as the incident position of the light flux incident on the surface of the light receiving element, thereby detecting the position in the height direction.
１４は第２検出手段であり投影光学系３によるレチクル
１面上のパターン像のビット位置を検出している。第２
検出手段１４は例えば第２図に示すような構成より成っ
ている。（第２図は作図上、第１図における配置とは上
下逆に示されている。）
第２図において２２は第１図の基準面であり、透過型の
窓部より成っており、第２検出手段の部に設けられてい
る。A second detection means 14 detects the bit position of the pattern image on the surface of the reticle formed by the projection optical system 3. Second
The detection means 14 has a configuration as shown in FIG. 2, for example. (For drawing purposes, Figure 2 is shown upside down from the arrangement in Figure 1.) In Figure 2, 22 is the reference plane of Figure 1, which consists of a transparent window. 2 is provided in the detection means section.
１５は結像レンズ、１６．１７は各々ハーフミラ−１８
〜２０は各々撮像素子であり、例えば固型のＣＯＤ等か
ら成っている。２１は各々基準面２２の結像レンズ１５
による結像位置を示している。即ちＣＣＤ １８は結像
レンズ１５を介して基準面２２と共役の関係にあり、Ｃ
ＣＤ１９は結像レンズ１５による後ビンの位置にあり、
ＣＣＤ１８は逆に前ビンの位置にあり、各々所定量オフ
セットして配置されている。15 is an imaging lens, and 16.17 are half mirrors 18.
20 are image pickup elements, each of which is made of, for example, a solid COD. 21 are the imaging lenses 15 of the reference plane 22;
shows the imaging position. That is, the CCD 18 is in a conjugate relationship with the reference plane 22 via the imaging lens 15, and
The CD 19 is located at the rear bin position of the imaging lens 15,
On the other hand, the CCDs 18 are located at the front bins, and are offset from each other by a predetermined amount.
第３図（Ａ）はレチクル１の要部平面図である。図中２
４は有効画面範囲、２５は実素子回路パターン領域、２
６はビット検出用マークであり、例えば同図（Ｂ）に示
すように矩形状の開口部２７より成っている。FIG. 3(A) is a plan view of the main part of the reticle 1. 2 in the diagram
4 is the effective screen range, 25 is the actual element circuit pattern area, 2
Reference numeral 6 denotes a bit detection mark, which is made up of a rectangular opening 27, for example, as shown in FIG.
次に本実施例の動作について説明する。Next, the operation of this embodiment will be explained.
本実施例では不図示の搬送系によりウェハ２がウェハチ
ャック４に装填され固定されている。そしてｘＹステー
ジ６が駆動され、ウェハ２の上面の高さを第１検出手段
１０１によりウェハ２面内の各位置について計測し、こ
れよりウェハ２の曲りや厚さ等のバラツキを計測してい
る。次いでＸＹステージ６を駆動させて第２検出手段１
４に設けた基準面が第１検出手段１０１の計測範囲内に
位置するようにして基準面２２の高さを検出している。In this embodiment, the wafer 2 is loaded onto a wafer chuck 4 and fixed by a transport system (not shown). Then, the xY stage 6 is driven, and the height of the top surface of the wafer 2 is measured at each position on the surface of the wafer 2 by the first detection means 101, and from this, variations in the wafer 2, such as its bending and thickness, are measured. . Next, the XY stage 6 is driven to detect the second detection means 1.
The height of the reference surface 22 is detected such that the reference surface provided at 4 is located within the measurement range of the first detection means 101.
これによりウェハ２面と基準面２２とのオフセットの高
さ量を検出している。Thereby, the amount of offset height between the wafer 2 surface and the reference surface 22 is detected.
次に第２検出手段１４をレチクル１面上のビット検出用
マーク２６が投影光学系３により投影される直下位置に
駆動配置する。Next, the second detection means 14 is driven and placed at a position directly below where the bit detection mark 26 on the surface of the reticle 1 is projected by the projection optical system 3.
そして光源１１からの光束をレチクル１面上のビット検
出用マーク２６に導光し、該ビット検出用マーク２６を
投影光学系３により第２検出手段１４の基準面２２近傍
に結像させている。The light beam from the light source 11 is guided to a bit detection mark 26 on the reticle 1 surface, and the bit detection mark 26 is imaged near the reference plane 22 of the second detection means 14 by the projection optical system 3. .
ここでレチクル１面上の投影光学系３により投影された
結像面（ビット面）と第２検出手段１４の各受光素子（
ＣＣＤ）１８．１９．２０からの出力信号との関係は例
えば第４〜第６図に示すようになる。Here, the imaging plane (bit plane) projected by the projection optical system 3 on the reticle 1 surface and each light receiving element of the second detection means 14 (
The relationship with the output signals from CCD) 18, 19, and 20 is as shown in FIGS. 4 to 6, for example.
第４図はＣＣＤ２０からの出力信号、第５図はＣＣＤ
１８からの出力信号、そして第６図はＣＣＤ １９から
の出力信号を各々示している。設計上、既知である投影
光学系３のデイフォーカス特性値とこれらの各出力信号
を公知の電気処理系により処理することにより、第７図
に示すような出力特性を得ている。これらの結果より演
算手段１０２によりレチクル１の投影レンズ３によるビ
ット位置と基準面２２との差分、即ちデイフォーカス量
を検出している。Figure 4 shows the output signal from CCD20, Figure 5 shows the CCD
18 and FIG. 6 shows the output signals from CCD 19, respectively. In terms of design, output characteristics as shown in FIG. 7 are obtained by processing the known day focus characteristic value of the projection optical system 3 and each of these output signals using a known electrical processing system. From these results, the calculating means 102 detects the difference between the bit position of the reticle 1 by the projection lens 3 and the reference plane 22, that is, the day focus amount.
そしてこのような検出をウェハ２面上の各位置について
行なっている。要するに、ビット基準面２２とウェハー
面の高さ差及び、ウェハーの曲りや厚み差を加味してウ
ェハー面の投影光学系３に対するＺ方向の最適位置（即
ち最適ビット面）をウェハー全面について算出している
。モしてθ−Ｚステージによりウェハ２をＺ方向の最適
位置であるレチクル１の投影光学系３によるビット位置
に位置するように駆動制御している。Such detection is performed for each position on the two surfaces of the wafer. In short, the optimal position of the wafer surface in the Z direction relative to the projection optical system 3 (that is, the optimal bit surface) is calculated for the entire wafer surface, taking into account the height difference between the bit reference plane 22 and the wafer surface, and the curvature and thickness difference of the wafer. ing. Furthermore, the wafer 2 is driven and controlled by the θ-Z stage so that it is positioned at the bit position of the reticle 1 determined by the projection optical system 3, which is the optimum position in the Z direction.
例えばウェハ２を各ショット毎にθ−２ステージにより
駆動制御して露光するようにしている。For example, the wafer 2 is driven and exposed by a θ-2 stage for each shot.
尚本実施例においてレチクル１面上にビット検出マーク
２６を設ける代わりにレチクル１面上の実素子回路パタ
ーンの一部を利用するようにしても良い。In this embodiment, instead of providing the bit detection mark 26 on the first surface of the reticle, a part of the actual element circuit pattern on the first surface of the reticle may be used.
第８図は本発明に係る第２検出手段の他の実施例の要部
概略図である。FIG. 8 is a schematic diagram of main parts of another embodiment of the second detection means according to the present invention.
同図においては１つの受光素子（ＣＣＤ）１８をピエゾ
素子のような圧電素子２９を用いて駆動機構２８により
受光素子１８をビット方向に駆動制御することにより投
影光学系３によるレチクル面のビット面を検出している
。この場合、駆動量は公知の手段により検出、制御され
ている。又、別の例として受光素子を固定してθ−Ｚス
テージを上下させてもよい。そして各位置における受光
素子１８からの信号出力の取扱いについては第２図に示
した検出方法と同様である。In the figure, one light receiving element (CCD) 18 is driven and controlled in the bit direction by a drive mechanism 28 using a piezoelectric element 29 such as a piezo element, so that the bit surface of the reticle surface is projected by the projection optical system 3. is being detected. In this case, the drive amount is detected and controlled by known means. Alternatively, the light receiving element may be fixed and the θ-Z stage may be moved up and down. The handling of the signal output from the light receiving element 18 at each position is the same as the detection method shown in FIG. 2.
尚、前述の実施例では補正駆動手段としてθ−Ｚステー
ジを用いてウェハ２を上下方向に駆動させてビット面に
位置させるようにしたが、θ−Ｚステージを用いなくて
も実質的にウェハ面をビット面に位置させることができ
る方法であればどのような手段を用いても良い。In the above-mentioned embodiment, the θ-Z stage was used as the correction drive means to drive the wafer 2 in the vertical direction to position it on the bit surface. However, even without using the θ-Z stage, the wafer 2 is Any method may be used as long as the surface can be positioned on the bit surface.
例えば、第１図においてミラー９の一部分を半透過面と
し、照明光束の一部を波長モニター３０に導光し、光源
１１からの発振波長を計測し、ビット補正に必要な波長
補正量を演算処理系３１により演算し、波長補正部３２
により波長補正をすることによりビット面の補正を行う
ようにしても良い。For example, in FIG. 1, a part of the mirror 9 is made into a semi-transparent surface, a part of the illumination light beam is guided to the wavelength monitor 30, the oscillation wavelength from the light source 11 is measured, and the amount of wavelength correction necessary for bit correction is calculated. The processing system 31 calculates the wavelength correction unit 32.
The bit plane may be corrected by performing wavelength correction.
例えば波長λ（２４８ｎｍ）における投影光学系の波長
とビット位置の関係は第９図に示すようになるので、こ
のときの関係より発振波長を変えてビット位置を制御す
るようにしても良い。又このとき波長補正の作業中の光
モレを防止する為にはシャッター３３を設け、該シャッ
ターを開閉するようにすれば良い。For example, the relationship between the wavelength of the projection optical system and the bit position at wavelength λ (248 nm) is as shown in FIG. 9, so the bit position may be controlled by changing the oscillation wavelength based on this relationship. At this time, in order to prevent light leakage during wavelength correction work, a shutter 33 may be provided and the shutter may be opened and closed.
又、マーク２７は実施例にかかわらず、変形例が可能で
ある。Further, the mark 27 can be modified regardless of the embodiment.
（発明の効果）
本発明によれば以上のように第１、第２検出手段、そし
て基準面を設けることによりレチクル面上のパターンを
投影光学系によりウニ八面上に投影露光する際、環境条
件が変化したり、又ウェハの厚さや曲りにバラツキ等が
あってもウェハを投影光学系のビット面に高精度に位置
合わせすることができ、常に高い解像力が得られる露光
装置を達成することができる。(Effects of the Invention) According to the present invention, by providing the first and second detection means and the reference plane as described above, when the pattern on the reticle surface is projected onto the eight faces of the sea urchin by the projection optical system, To achieve an exposure device that can align a wafer with a bit surface of a projection optical system with high precision even if conditions change or there are variations in wafer thickness or bending, etc., and can always obtain high resolution. Can be done.
第１図は本発明の一実施例の要部概略図、第２図、第３
図（Ａ）、（Ｂ）は第１図の一部分の説明図、第４、第
５、第６図は本発明に係る検出手段から得られるビット
面に関する出力信号の説明図、第７図は本発明において
ビット面からのデイフォーカス量と検出手段から得られ
る出力信号との関係を示す説明図、第８図は本発明の一
部分の他の実施例の要部概略図、第９図は本発明におけ
る照明光束の波長と投影光学系によるビット位置との関
係を示す説明図である。
図中１はレチクル、２はウェハ、３は投影光学系、４は
ウェハチャック、５は補正駆動手段（θ−Ｚステージ）
、６はＸＹステージ、７．９、ｌＯはミラー １１は光
源、１０１は第１検出手段、１４は第２検出手段、１０
２は演算手段、１８．１９．２０はＣＣＤ、２２は基準
面、２８は駆動機構、２９は圧電素子、２６はビット検
出用マーク、２５は実素子回路パターン領域、である。
第
図
第
図
第
図
第
図
第
図
第
図（Ａ）
第
図（Ｂ）
第
図
第
図
Ｐｌ
第
図Figure 1 is a schematic diagram of the main parts of an embodiment of the present invention, Figures 2 and 3.
Figures (A) and (B) are explanatory diagrams of a part of Figure 1, Figures 4, 5, and 6 are diagrams of output signals related to bit planes obtained from the detection means according to the present invention, and Figure 7 is an explanatory diagram of a part of Figure 1. An explanatory diagram showing the relationship between the day focus amount from the bit plane and the output signal obtained from the detection means in the present invention, FIG. 8 is a schematic diagram of the main part of another embodiment of the present invention, and FIG. FIG. 3 is an explanatory diagram showing the relationship between the wavelength of the illumination light beam and the bit position by the projection optical system in the invention. In the figure, 1 is a reticle, 2 is a wafer, 3 is a projection optical system, 4 is a wafer chuck, and 5 is a correction drive means (θ-Z stage).
, 6 is an XY stage, 7.9, IO is a mirror, 11 is a light source, 101 is a first detection means, 14 is a second detection means, 10
2 is an arithmetic means, 18, 19, 20 is a CCD, 22 is a reference plane, 28 is a drive mechanism, 29 is a piezoelectric element, 26 is a bit detection mark, and 25 is an actual element circuit pattern area. Figure Figure Figure Figure Figure Figure Figure (A) Figure (B) Figure Figure Pl Figure
Claims (3)
物体面上に投影露光する露光装置において、該第２物体
面と該第２物体面又はその近傍に設けた基準面との相対
的な高さを検出する第１検出手段と該投影光学系による
該第１物体面のパターン投影像のビット位置を検出する
ために第２物体を載置する可動ステージに設けた第２検
出手段と該第１、第２検出手段からの出力信号を利用し
て、該第２物体面の該投影光学系の光軸方向の最適位置
を求める演算手段と該演算手段からの出力信号に基づい
て該第２物体の位置制御を行う補正駆動手段とを有して
いることを特徴とする露光装置。(1) The pattern on the first object plane is transferred to the second object plane through the projection optical system.
In an exposure apparatus that performs projection exposure onto an object surface, a first detection means for detecting a relative height between the second object surface and a reference surface provided at or near the second object surface; and the projection optical system. In order to detect the bit position of the pattern projection image on the first object surface, a second detection means provided on a movable stage on which a second object is placed and output signals from the first and second detection means are used. , comprising calculation means for determining the optimum position of the second object plane in the optical axis direction of the projection optical system, and correction drive means for controlling the position of the second object based on an output signal from the calculation means. An exposure device characterized by:
による前記第１物体面のパターン像のビット位置との差
分を検出していることを特徴とする請求項１記載の露光
装置。(2) The exposure apparatus according to claim 1, wherein the second detection means detects a difference between the reference plane and a bit position of a pattern image of the first object plane formed by the projection optical system.
出手段の一部に設けられていることを特徴とする請求項
１記載の露光装置。(3) The exposure apparatus according to claim 1, wherein the reference plane is made of a transmission type window and is provided in a part of the second detection means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1028147A JPH02207521A (en) | 1989-02-07 | 1989-02-07 | Aligner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1028147A JPH02207521A (en) | 1989-02-07 | 1989-02-07 | Aligner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02207521A true JPH02207521A (en) | 1990-08-17 |
Family
ID=12240652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1028147A Pending JPH02207521A (en) | 1989-02-07 | 1989-02-07 | Aligner |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02207521A (en) |
-
1989
- 1989-02-07 JP JP1028147A patent/JPH02207521A/en active Pending
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