JPH02205804A - Semiconductor light guide - Google Patents
Semiconductor light guideInfo
- Publication number
- JPH02205804A JPH02205804A JP2587989A JP2587989A JPH02205804A JP H02205804 A JPH02205804 A JP H02205804A JP 2587989 A JP2587989 A JP 2587989A JP 2587989 A JP2587989 A JP 2587989A JP H02205804 A JPH02205804 A JP H02205804A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- superlattice
- layer
- refractive index
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000013078 crystal Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims description 32
- 238000005253 cladding Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- 229910000484 niobium oxide Inorganic materials 0.000 description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 101710200896 Acyl-CoA thioesterase 2 Proteins 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、１Ｍモードのみ又はＴＥモードのみを導波す
るというモード選択性を有する半導体光導波路に関し、
光伝送システムあるいは光電積回路に用いて好適なもの
である。Detailed Description of the Invention <Industrial Application Field> The present invention relates to a semiconductor optical waveguide having mode selectivity of guiding only 1M mode or only TE mode,
It is suitable for use in optical transmission systems or photoelectric integrated circuits.
〈従来の技術〉
単一モードファイバ中を伝搬してきた光を導波形デバイ
スに入射′して光信号処理を行う際、その入射光波は一
般に楕円偏光になっている。これに対し、導波型デバイ
スには、ＴＥモード（ｔｒａｎｓｖｅｒｓｅ ｅｌｅｅ
ｔｒ＋ｃ ｍｏｄｅｓ）あるいは１Ｍモード（ｔｒａｎ
ｓｖｅｒｓｅ ｇｅｎｅｔｉｃ ｍｏｄｅｓ）の何れか
の偏向に対してのみ動作するものもあるので、ＴＥモー
ドあるいは７Ｍモードの何れかを選択的に導波させる導
波路が必要となる。<Prior Art> When light propagated through a single mode fiber is incident on a waveguide device for optical signal processing, the incident light wave is generally elliptically polarized light. On the other hand, waveguide devices have TE mode (transverse ele...
tr+c modes) or 1M mode (tran
Since some devices operate only for polarizations of either TE mode or 7M mode, a waveguide that selectively guides either the TE mode or the 7M mode is required.
このように光通信光集積回路においても、一般の光学実
験系と同様にモード選択性導波路が必要となる。そして
、従来から、モード選択性導波路としては、導波路表面
に金属を装荷した金属装荷型導波路、Ｔｉ拡散ニオブ酸
リチウム導波路上に酸化ニオブを堆積させた酸化ニオブ
装荷型ニオブ酸リチウム導波路などがある。As described above, mode-selective waveguides are required in optical communication integrated circuits as well as in general optical experimental systems. Conventionally, mode-selective waveguides include metal-loaded waveguides in which metal is loaded on the waveguide surface, and niobium oxide-loaded lithium niobate waveguides in which niobium oxide is deposited on a Ti-diffused lithium niobate waveguide. There are waves, etc.
〈発明が解決しようとする課題〉
しかしながら、前述した金属装荷型導波路や酸化ニオブ
装荷型ニオブ酸リチウム導波路などの従来のモード選択
性導波では、ＴＥ導波、７Ｍ漏洩のみが可能であり、７
Ｍモードのみを導波することはできなかった。<Problems to be Solved by the Invention> However, conventional mode-selective waveguides such as the metal-loaded waveguide and niobium oxide-loaded lithium niobate waveguide described above are only capable of TE waveguide and 7M leakage. ,7
It was not possible to guide only the M mode.
本発明はこのような点に鑑み、半導体を用いた光集積回
路等に用いるモード選択性導波路であり、ＴＥモードの
みばかりでなく７Ｍモードのみを選択的に導波すること
ができる半導体光導波路を提供することを目的とする。In view of these points, the present invention is a mode-selective waveguide for use in optical integrated circuits using semiconductors, and is a semiconductor optical waveguide that can selectively guide not only the TE mode but also the 7M mode. The purpose is to provide
く課題を解決するための手段〉
本発明者は、上記目的を達成するため種々検討した結果
、異種の半導体を交互に積層させた超格子を導波層とす
るスラブ導波路において、超格子の一部を選択的に外部
から不純物を導入しない混晶化によって屈折率を変化さ
せることにより、横方向の光の閉じこめを行い、得られ
た導波路がＴＥあるいは７Ｍモードを選択的に導波する
ことができることを知見し、本発明を完成させた。Means for Solving the Problems> As a result of various studies to achieve the above object, the present inventor has developed a method for achieving the above object in a slab waveguide whose waveguide layer is a superlattice in which different types of semiconductors are alternately laminated. By changing the refractive index through mixed crystallization without selectively introducing impurities from the outside, light is confined in the lateral direction, and the resulting waveguide selectively guides the TE or 7M mode. The present invention was completed based on the discovery that this can be done.
かかる知見に基づく本発明の第１の半導体光導波路の構
成は、半導体結晶の基板の上に、異種の半導体を交互に
積層させた超格子構造を有する半導体光導波路であって
、光が導波するコア領域が、前記超格子構造からなり、
その両側のクラッド領域が、不純物を導入しない方法に
より超格子を混晶化した半導体結晶よりなることを特徴
とし、一方の本発明の第２の半導体光導波路の構成は、
半導体結晶の基板の上に、異種の半導体を交互に積層さ
せた超格子構造を有する半導体光導波路であって、光が
導波するコア領域が、不純物を混入しない方法により超
格子を結晶化した半導体結晶よりなり、その両側のクラ
ッド領域が、前記超格子構造よりなることを特徴とする
。The first semiconductor optical waveguide of the present invention based on this knowledge is a semiconductor optical waveguide having a superlattice structure in which different types of semiconductors are alternately laminated on a semiconductor crystal substrate, in which light is guided. a core region consisting of the superlattice structure,
The second semiconductor optical waveguide of the present invention has a structure in which the cladding regions on both sides thereof are made of a semiconductor crystal in which a superlattice is mixed by a method that does not introduce impurities.
A semiconductor optical waveguide having a superlattice structure in which different types of semiconductors are alternately stacked on a semiconductor crystal substrate, in which the core region through which light is guided is made by crystallizing the superlattice using a method that does not introduce impurities. It is characterized in that it is made of semiconductor crystal, and cladding regions on both sides thereof have the superlattice structure described above.
く作 用〉
前記構成において、不純物を導入しない方法によって超
格子を混晶化した混晶化超格子をコア領域あるいはクラ
ッド領域に設けることにより、屈折率をＴＥ傷波に対し
ては、超格子より小さく、ＴＭ傷波に対しては、超格子
より大きくできるため、ＴＥ導波、７Ｍ漏洩のみならず
ＴＭ導波、ＴＥ漏洩の半導体光導波路の形成も可能とな
る。Effect> In the above structure, by providing a mixed crystal superlattice in the core region or cladding region, which is obtained by mixing the superlattice by a method that does not introduce impurities, the refractive index can be adjusted to the superlattice for TE damaged waves. Since it can be made smaller and larger than a superlattice for TM damaged waves, it is possible to form not only TE waveguides and 7M leakage semiconductor optical waveguides but also TM waveguides and TE leakage semiconductor optical waveguides.
く実 施 例〉 以下、本発明を実施例に基づいて説明する。Example of implementation Hereinafter, the present invention will be explained based on examples.
第１ｒＩＡには一実施例にかかるＴＥ導波路を示す。同
図中、１は例えばＧ ａ Ａ ｓ単結晶からなる基板、
２は基板１より低屈折率を有するＡｊｘＧａｌ−、Ａｓ
（例えばｘ＝ｏ、５５）からなるクラッド層、３はＧ
ａＡｓ８０Ａ、ＡｊＡｓ８０Ａ１００周期からなる超格
子層である。そして、４は超格子層３を後述する方法に
より混晶化した混晶化した混晶化超格子層であり、５は
超格子１１ｉ１３を混晶化して混晶化超格子層４を形成
するために堆積した５Ｉ０２層である。The first rIA shows a TE waveguide according to one embodiment. In the figure, 1 is a substrate made of, for example, a GaAs single crystal;
2 is AjxGal-, As having a lower refractive index than the substrate 1.
(for example, x=o, 55), 3 is G
It is a superlattice layer consisting of aAs80A and AjAs80A100 periods. 4 is a mixed crystal superlattice layer obtained by mixing the superlattice layer 3 by a method described later, and 5 is a mixed crystal superlattice layer 4 by mixing the superlattice 11i13. 5I02 layer deposited for the purpose.
本実施例においては、上記Ｓ ｉ Ｏ，層５をパターン
化して溝型の形状としている。In this embodiment, the SiO layer 5 is patterned into a groove shape.
次に、第２図に他の一実施例にがかる７Ｍ導波路を示す
。本実施例にかかる７Ｍ導波路は前述したＴＥ導波路と
同様に基板１に、クラッド層２、超格子層３、混晶化超
格子層４及びＳｉＯ□層５が形成されるもので、上記５
ｉｎ２層５はリブ型のストライプ形状をなしている。Next, FIG. 2 shows a 7M waveguide according to another embodiment. The 7M waveguide according to this example has a cladding layer 2, a superlattice layer 3, a mixed crystal superlattice layer 4, and a SiO□ layer 5 formed on a substrate 1, as in the TE waveguide described above. 5
The in2 layer 5 has a rib-like stripe shape.
このような構成を有するＴＥ導波路及び７Ｍ導波路の作
成方法を以下に説明する。尚、本作成方法は超格子を混
晶化する方法として、不純物を導入しない方法を用いて
いる。A method for creating a TE waveguide and a 7M waveguide having such a configuration will be described below. Note that this production method uses a method that does not introduce impurities to mix the superlattice.
■ まず、分子線エピタキシィ（ＭＢＥ）あるいは有機
金属気相成長法（ＯＣＶＤ）等の原子層レベルでの膜厚
制卸が可能な結晶成長法を用いて基板１上にクラッド層
２、続いて前記超格子層３を形成する。■ First, the cladding layer 2 is deposited on the substrate 1 using a crystal growth method such as molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (OCVD) that allows film thickness control at the atomic layer level. A superlattice layer 3 is formed.
■ 次に、超格子層３の上にＳ ｉ Ｏ，層５をＰ−Ｃ
ＶＤにより厚さ２０００Ａ程度堆積させる。■ Next, on top of superlattice layer 3, SiO layer 5 is formed by P-C
A thickness of about 2000 Å is deposited by VD.
■ その後、該５ｉｎ２！１５をフオトリ・ノブラフイ
ーの技術及び反応性イオンエツチング（ＲＩ Ｅ）を用
いてパターン化する。(2) The 5in2!15 is then patterned using photolithography and reactive ion etching (RIE).
■ 次に、乙のウェハのパターン化されたＳｉ０層５の
上層に、別のＧａＡｓウェハを覆って重ねた状態で、水
素雰囲気中で昇温速度３０℃／ｓｅｃ、熱処理温度９５
０℃、熱処理時間３０ ｓｅｃの条件下で熱処理する。■ Next, another GaAs wafer is placed on top of the patterned Si0 layer 5 of the wafer B, and heat treatment is performed at a heating rate of 30°C/sec and a heat treatment temperature of 95°C in a hydrogen atmosphere.
Heat treatment is performed at 0° C. for a heat treatment time of 30 seconds.
■ この熱処理によって、Ｓｉ０層５の下側に位置する
超格子層３は混晶され、混晶化超格子層４となる。(2) Through this heat treatment, the superlattice layer 3 located below the Si0 layer 5 is mixed crystal, and becomes a mixed crystal superlattice layer 4.
尚、本実施例においては、混晶化超格子層４を得る方法
として、５ｉｎ２膜を用ｂ）た不純物を導入しない方法
によって具体的ζこ説明したが、ＳｉＯ２膜以外として
、例えばプラズマＣＶＤによって作製されたＳｉ、Ｎ、
膜を用しまた場合でも、■と同条件にて熱処理すること
が可能である。In this example, the method of obtaining the mixed crystal superlattice layer 4 was specifically explained using a method using a 5in2 film b) without introducing impurities. The prepared Si, N,
Even if a film is used, heat treatment can be performed under the same conditions as in (2).
上述した方法により、モード選択性導波路を作製する場
合には、上記■のＳ ｉ ０２層５をパターン化する際
、コア領域、あるし）は該コア領域の両側のクラッド領
域のどちらか一方のみを残してその後不純物を導入しな
い方法によって熱処理を施し、混晶化した混晶化超格子
層４を形成することにより、ＴＥ導波領域となるＴＥ導
波路及び７Ｍ導波領域となる７Ｍ導波路のいずれかを形
成するようにすればよい。When producing a mode-selective waveguide by the method described above, when patterning the S i 02 layer 5 described in (1) above, the core region or () is either one of the cladding regions on both sides of the core region. By applying a heat treatment using a method that does not introduce impurities while leaving only the TE waveguide that will become the TE waveguide region and the 7M waveguide that will become the 7M waveguide region, Either one of the wave paths may be formed.
前述した第２図に示す一実施例に係る７Ｍ導波路に、波
長８５００Ａの光を導波させた時のニア・フィールド・
パターンをａｍした。The near field when light with a wavelength of 8500A is guided through the 7M waveguide according to the embodiment shown in FIG.
am the pattern.
との結果、７Ｍモードを入射したときは、チャネルに沿
って導波され、ＴＥモード入射時は漏洩になっており、
モードが選択されている事が確認された。As a result, when the 7M mode is incident, the wave is guided along the channel, and when the TE mode is incident, it is leaky.
It was confirmed that the mode was selected.
第３図、第４図に上記方法によって作製されたモード選
択性導波路の屈折率分布の様子を示す。尚、横軸は導波
路の横方向の空間的な位置、縦軸は屈折率を示す。FIGS. 3 and 4 show the refractive index distribution of the mode-selective waveguide fabricated by the above method. Note that the horizontal axis represents the horizontal spatial position of the waveguide, and the vertical axis represents the refractive index.
第３図に示すように、光がＴＥ傷偏波場合、混晶化部の
屈折率は超格子部分より低くなっており、またＴＥ偏波
の場合、第４図に示すように、上記とは逆に、混晶化部
の屈折率が超格子に比べて高くなっている。As shown in Figure 3, when the light is TE scratch polarized, the refractive index of the mixed crystal part is lower than that of the superlattice part, and when the light is TE polarized, as shown in Figure 4, the refractive index of the mixed crystal part is lower than that of the superlattice part. On the contrary, the refractive index of the mixed crystal part is higher than that of the superlattice.
光は、屈折率の高い部分を導波する為、上記屈折率の変
化によ１）ＴＥ導波路、７Ｍ導波路が形成される。Since light is guided through a portion with a high refractive index, 1) a TE waveguide and a 7M waveguide are formed by the change in the refractive index.
第５図に超格子の屈折率及び混晶化した超格子の屈折率
の一具体例を示す。図中、ｎＴ ！ Ｓ Ｌは超格子の
ＴＥＩＩ波に対する屈折率’ ｎＴ１１８Ｌは超格子の
ＴＭ傷偏波対する屈折率’ ｎ０ＩＩＬは超格子が完全
に混晶化した時の屈折率を示す。FIG. 5 shows a specific example of the refractive index of a superlattice and the refractive index of a mixed crystal superlattice. In the figure, nT! SL is the refractive index of the superlattice for the TEII wave; nT118L is the refractive index of the superlattice for the TM scratch polarized wave; n0IIL is the refractive index when the superlattice is completely mixed.
尚、本実施例におけるＳ ｉ Ｏ２による混晶化方法で
は超格子の混晶化は完全混晶までは進まず、部分的な混
晶化にとどまっている。本実施例における混晶化の度合
い（混晶化率）は、混晶化にともなう発光波長シフトか
ら０．３程度と考えられる。この時混晶化部の屈折率は
、図中ＮｐｏｓＬ（Ｔ Ｅ偏波に対して）とＮＰＯＩＩ
Ｌ ”（ＴＭｑ波に対して）と考えられる。In the mixed crystal formation method using S i O 2 in this embodiment, the superlattice does not become a completely mixed crystal, but only partially mixed crystal. The degree of mixed crystallization (mixed crystallization rate) in this example is considered to be about 0.3 based on the emission wavelength shift accompanying mixed crystallization. At this time, the refractive index of the mixed crystal part is NposL (for T E polarization) and NPOII in the figure.
L'' (for TMq waves).
次に、第６図に本発明の別の一実施例を示す。第６図に
おいて、１は半導体基板、２は入ｈｃＧｍｌ−ｘＡｓか
らなるクラッド層、３は超格子層、４は混晶化超格子層
、６はＴＭ４１１波に対してのみ動作するＴＭ１１１波
動作光素子、７はＴＥ個波に対してのみ動作するＴＥ傷
偏波作光素子を、各々図示している。本実施例において
は、ＴＥ導波路と７Ｍ導波路とを一つの半導体基板１上
に混在させている。Next, FIG. 6 shows another embodiment of the present invention. In FIG. 6, 1 is a semiconductor substrate, 2 is a cladding layer made of hcGml-xAs, 3 is a superlattice layer, 4 is a mixed crystal superlattice layer, and 6 is a TM111 wave operating light that operates only for TM411 waves. Element 7 indicates a TE polarization light control element that operates only for TE waves. In this embodiment, a TE waveguide and a 7M waveguide are mixed on one semiconductor substrate 1.
すなわち、ＴＭ偏波動作光素子６．ＴＥ＃４向動作光動
作光素子７られた半導体光集積回路において、集積導波
路の任意の場所を混晶化することにより、任意の場所に
ＴＥ導波路、７Ｍ導波路を形成し、偏波依存性を持つ光
素子を動作させている。That is, the TM polarization operating optical element 6. In a semiconductor optical integrated circuit with TE #4-direction optical operation optical element 7, a TE waveguide and a 7M waveguide can be formed at any location by mixing crystals at any location of the integrated waveguide, and the polarization Optical devices with dependencies are operated.
また、他の光集積回路ユニットから、楕円偏光の状態で
入射してきた光を、ＴＥ偏光、また（よＴＭ傷光のみの
状態にして、別の光集積回路ユニットへ光を出射させる
ことも可能である。It is also possible to convert the elliptically polarized light that has entered from another optical integrated circuit unit into a TE polarized state or a TM polarized light state, and then output the light to another optical integrated circuit unit. It is.
す上説明した実施例では、Ｇａ杓−ＡＩＧａＡｇ材料の
場合において、ＳｉＯ２を用いて超格子を混晶化した場
合について述べたが、本発明は超格子混晶化としてＧａ
Ａｇ−人ＩＧａ人Ｓに限定されず、例えばＩｎＧａＡｓ
／ＩｎＰ、 ＩｎＧａＡｓＰ／ＩｎＰ、 ＩｎＧａ入ｓ
／ＩｎＡｌＡｓ等の材料にも適用可能なことは云うまで
もない。また、混晶化超格子を得る方法も、Ｓ ｉ Ｏ
２膜を用いろ方法以外に、例えばプラズマＣＶＤによっ
て作製された窒化膜（Ｓ ｉ３Ｎ４膜）等の誘電体膜を
用いる方法など、不純物を導入しない超格子を混晶化す
る方法であれば、いずれを用いていもよい。In the above-described embodiment, a case was described in which the superlattice was made into a mixed crystal using SiO2 in the case of a Ga-AIGaAg material.
Not limited to Ag-IGaS, for example InGaAs
/InP, InGaAsP/InP, InGa included
Needless to say, it is also applicable to materials such as /InAlAs. In addition, the method of obtaining a mixed crystal superlattice is also
In addition to the method using two films, there are other methods, such as using a dielectric film such as a nitride film (Si3N4 film) produced by plasma CVD, as long as the superlattice is mixed crystal without introducing impurities. may be used.
尚、本実施例においては超格子層を混晶化する方法とし
て、不純物を導入しない方法を用いたが、この他に不純
物を導入する方法を用いて超格子層を混晶化させて、用
途を限定した半導体光導波路を成形することもできる。In this example, a method without introducing impurities was used to mix the superlattice layer, but there are other ways to mix the superlattice layer by introducing impurities. It is also possible to form a semiconductor optical waveguide with a limited amount of .
〈発明の効果〉
以上説明したように、本発明によれば、異種の半導体を
交互に積層させた超格子構造を有する半導体導波路にお
いて、一部の超格子を外部から不純物を導入しない混晶
によりＴＥ。<Effects of the Invention> As explained above, according to the present invention, in a semiconductor waveguide having a superlattice structure in which different types of semiconductors are alternately laminated, a part of the superlattice is made of a mixed crystal without introducing impurities from the outside. By TE.
ＴＭそれぞれの偏波に対してモード選択性のある導波路
を提供できろとい利点がある。更に、超格子を利用した
半導体光集積回路において、集積導波路の任意の場所を
混晶化することにより、任意の場所にＴＥ導波路、７Ｍ
導波路を提供できるとい利点がある。The advantage is that it can provide a waveguide with mode selectivity for each polarized wave of the TM. Furthermore, in a semiconductor optical integrated circuit using a superlattice, by mixing any part of the integrated waveguide, a TE waveguide, 7M
It has the advantage of being able to provide a waveguide.
第１，２図は各々本発明の一実施例にがかるモード選択
性導波路を示す斜視図で、第１図はＴＥ導波路、第２図
は７Ｍ導波路を示す図、第３．４図は各々導波路の横方
向の屈折率分布を示す図で、第３図はＴＥ導波路の分布
図、第４図１よ７Ｍ導波路の分布図、第５図は混晶化部
の屈折率を示す図、第６図は本発明の半導体光導波路を
利用した光Ｓ積回路を示す図である。
図面中、１はＧａＡｓ基板、２はＡｌＧａＡｓクラッド
層、３は超格子層、４は混晶化超格子層、５は３ ｊ
Ｏ２層、６はＴＭ＠波動波動素光素子はＴＥ帰波動作光
素子である。1 and 2 are perspective views showing mode selective waveguides according to an embodiment of the present invention, respectively. FIG. 1 is a TE waveguide, FIG. 2 is a 7M waveguide, and FIGS. 3.4. are diagrams showing the refractive index distribution in the lateral direction of the waveguide. Figure 3 is the distribution diagram for the TE waveguide, Figure 4 is the distribution diagram for the 1 to 7M waveguides, and Figure 5 is the refractive index distribution of the mixed crystal part. FIG. 6 is a diagram showing an optical S product circuit using the semiconductor optical waveguide of the present invention. In the drawings, 1 is a GaAs substrate, 2 is an AlGaAs cladding layer, 3 is a superlattice layer, 4 is a mixed crystal superlattice layer, and 5 is a 3 j
The O2 layer 6 is a TM@wave optical element and is a TE return wave operating optical element.
Claims (1)
層させた超格子構造を有する半導体光導波路であって、 光が導波するコア領域が、前記超格子構造 からなり、その両側のクラッド領域が、不純物を導入し
ない方法により超格子を混晶化した半導体結晶よりなる
ことを特徴とする半導体光導波路。 ２）半導体結晶の基板の上に、異種の半導体を交互に積
層させた超格子構造を有する半導体光導波路であって、 光が導波するコア領域が、不純物を混入し ない方法により超格子を結晶化した半導体結晶よりなり
、その両側のクラッド領域が、前記超格子構造よりなる
ことを特徴とする半導体光導波路。 ３）請求項１又は２記載の半導体光導波路において、 上記不純物を導入しない方法として、ＳｉＯ＿２膜、Ｓ
ｉ＿３Ｎ＿４膜を半導体結晶上に堆積し、熱処理する方
法を用いることを特徴とする半導体光導波路。[Claims] 1) A semiconductor optical waveguide having a superlattice structure in which different types of semiconductors are alternately laminated on a semiconductor crystal substrate, wherein a core region through which light is guided is formed in the superlattice structure. 1. A semiconductor optical waveguide characterized in that the cladding regions on both sides of the cladding region are made of a semiconductor crystal in which a superlattice is mixed by a method that does not introduce impurities. 2) A semiconductor optical waveguide having a superlattice structure in which different types of semiconductors are alternately stacked on a semiconductor crystal substrate, in which the core region through which light is guided is formed by crystallizing the superlattice using a method that does not introduce impurities. 1. A semiconductor optical waveguide, characterized in that the cladding regions on both sides of the cladding region are made of a superlattice structure as described above. 3) In the semiconductor optical waveguide according to claim 1 or 2, as a method of not introducing the impurity, SiO_2 film, S
A semiconductor optical waveguide characterized by using a method of depositing an i_3N_4 film on a semiconductor crystal and heat-treating the film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2587989A JPH02205804A (en) | 1989-02-06 | 1989-02-06 | Semiconductor light guide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2587989A JPH02205804A (en) | 1989-02-06 | 1989-02-06 | Semiconductor light guide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02205804A true JPH02205804A (en) | 1990-08-15 |
Family
ID=12178068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2587989A Pending JPH02205804A (en) | 1989-02-06 | 1989-02-06 | Semiconductor light guide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02205804A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61134740A (en) * | 1984-12-06 | 1986-06-21 | Nec Corp | Semiconductor optical switch |
| JPS61184508A (en) * | 1985-02-12 | 1986-08-18 | Mitsubishi Electric Corp | Optical waveguide |
| JPS62205757A (en) * | 1986-03-06 | 1987-09-10 | Dai Ichi Kogyo Seiyaku Co Ltd | Powdery defoaming agent composition for food |
| JPS6449003A (en) * | 1987-08-19 | 1989-02-23 | Mitsubishi Electric Corp | Light guide |
-
1989
- 1989-02-06 JP JP2587989A patent/JPH02205804A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61134740A (en) * | 1984-12-06 | 1986-06-21 | Nec Corp | Semiconductor optical switch |
| JPS61184508A (en) * | 1985-02-12 | 1986-08-18 | Mitsubishi Electric Corp | Optical waveguide |
| JPS62205757A (en) * | 1986-03-06 | 1987-09-10 | Dai Ichi Kogyo Seiyaku Co Ltd | Powdery defoaming agent composition for food |
| JPS6449003A (en) * | 1987-08-19 | 1989-02-23 | Mitsubishi Electric Corp | Light guide |
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