JPH0220015A - Resist curing device - Google Patents
Resist curing deviceInfo
- Publication number
- JPH0220015A JPH0220015A JP16881988A JP16881988A JPH0220015A JP H0220015 A JPH0220015 A JP H0220015A JP 16881988 A JP16881988 A JP 16881988A JP 16881988 A JP16881988 A JP 16881988A JP H0220015 A JPH0220015 A JP H0220015A
- Authority
- JP
- Japan
- Prior art keywords
- lamp
- mercury lamp
- frequency
- resist
- ultraviolet ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000007423 decrease Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 19
- 230000005855 radiation Effects 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010304 firing Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明はレジスト硬化装置係り、特に半導体ウェハに塗
イｆｉされたレジストの硬化装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a resist curing device, and more particularly to a curing device for a resist coated on a semiconductor wafer.
（従来の技術）
半導体製造工程において、半導体ウェハ上のレジストは
熱と紫外線で硬化されるが、必要な照射強度と時間は半
導体の種類で違ってくる。(Prior Art) In the semiconductor manufacturing process, resist on a semiconductor wafer is cured with heat and ultraviolet rays, but the required irradiation intensity and time vary depending on the type of semiconductor.
従来の半導体ウェハのレジスト硬化装置の一例を示す第
２図において、電源５に接続された安定器４の負荷側の
一側には水銀灯２の一端が接続され、安定器４の負荷側
の他の一側には電磁接触器の主接点７に直列に接続され
た照度切換用のコンデンサ８Ａと同じくコンデンサ８Ｂ
が並列に接続され、コンデンサ８Ａ、８Ｂの負荷側は水
銀灯２の他の一端に接続されている。In FIG. 2, which shows an example of a conventional semiconductor wafer resist curing apparatus, one end of a mercury lamp 2 is connected to one end of the load side of a ballast 4 connected to a power source 5, and the other end of the load side of the ballast 4 is connected to one end of the mercury lamp 2. On one side, there is a capacitor 8B connected in series to the main contact 7 of the electromagnetic contactor, as well as a capacitor 8A for switching illuminance.
are connected in parallel, and the load sides of the capacitors 8A and 8B are connected to the other end of the mercury lamp 2.
又、別に設けられた演算制御装置３から電磁接触器の主
接点７を開閉する図示しないコイルの励磁回路をＯＮ・
ＯＦＦする図示しない制御回路には、図示しないインタ
ーロックが接続されている。In addition, the excitation circuit of a coil (not shown) that opens and closes the main contact 7 of the electromagnetic contactor is turned on and off from the separately provided arithmetic and control device 3.
An interlock (not shown) is connected to a control circuit (not shown) that is turned off.
このように構成したレジスト硬化装置において、電磁接
触器の主接点７は、演算制御装置３から出た半導体ウェ
ハの種類に応じた照射強度指令で開閉されるが、水銀灯
の初期のばらつきや点灯時間による照度低下で照！＞［
がばらつく。In the resist curing apparatus configured as described above, the main contact 7 of the electromagnetic contactor is opened and closed in accordance with the irradiation intensity command according to the type of semiconductor wafer issued from the arithmetic and control unit 3. The illuminance decreases due to lighting! ＞［
varies.
（発明が解決しようとする課題）
すると、レジストの硬化度がばらつくので、水銀灯の取
り換えを早めていたが、水銀灯がむだになる。(Problem to be Solved by the Invention) As a result, the degree of curing of the resist varies, so the mercury lamp was replaced sooner, but the mercury lamp was wasted.
そこで本発明の目的は、レジスト硬化膜の品質管理が容
易で水銀灯もむだにしないレジスト硬化装置を１ｑるこ
とである。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a resist curing apparatus that allows easy quality control of a cured resist film and does not waste a mercury lamp.
［発明の構成コ
（課題を解決するための手段と作用）
本発明は、半導体ウェハに塗イ［されたレジストを硬化
するレジスト硬化装置のウェハ近傍に、水銀灯の紫外線
量を検出する紫外線照射線量計を設け、この検出量をあ
らかじめ半導体ウェハの種類別のプロセスに従った照射
基準が設定された演算υ制御装置へ送って比較し、その
補正値を周波数・電圧可変装置へ伝送して水銀灯へ印加
する電圧と周波数を変えることで、水銀灯の点灯時間や
水銀灯間々のばらつきで紫外線の照Ｅｌが変動しても、
又、製造ロットで半導体ウェハの種類が異なっても、水
銀灯をむだにすることなく一定のレジスト硬化膜を得る
ことのできるレジスト硬化装置である。[Structure of the Invention (Means and Effects for Solving the Problems)] The present invention provides a method for detecting the amount of ultraviolet rays emitted from a mercury lamp in the vicinity of the wafer of a resist curing device that cures a resist coated on a semiconductor wafer. The detected amount is sent to a calculation υ control device, which has irradiation standards set in advance according to the process for each type of semiconductor wafer, for comparison, and the correction value is sent to a frequency/voltage variable device to be sent to a mercury lamp. By changing the applied voltage and frequency, even if the ultraviolet irradiation El changes due to the lighting time of the mercury lamp or variations between mercury lamps,
Moreover, even if the types of semiconductor wafers are different depending on the manufacturing lot, the resist curing apparatus is capable of obtaining a constant cured resist film without wasting mercury lamps.
（実施例）
以下、本発明のレジスト硬化装置の一実施例を第１図で
説明する。(Example) Hereinafter, an example of the resist curing apparatus of the present invention will be described with reference to FIG.
第１図において、電源５に接続された周波数・電圧可変
装置の負荷側には安定器４を介して水銀灯２が接続され
、半導体ウェハ１の近傍には紫外線照射線量を検出して
その値を演算制御装置３へ送る紫外線照射１：ｆ９が設
けられている。In FIG. 1, a mercury lamp 2 is connected to the load side of a frequency/voltage variable device connected to a power source 5 via a ballast 4, and a mercury lamp 2 is connected near a semiconductor wafer 1 to detect the amount of ultraviolet irradiation and calculate the value. Ultraviolet irradiation 1:f9 is provided to be sent to the arithmetic and control unit 3.
このような構成のレジスト硬化装置においては、予め組
込まれた半導体の種類別のプロセスに従って演算制御袋
＠３から照射強度指令が周波数・電圧可変装置６に送ら
れ、水銀灯２にはその指令に従った周波数・電圧が印加
されるが、もし、水銀灯２の照度を検出した紫外線照射
線量計９の値が基準値と異なると演算制御装置３で補正
の要否が判断され、必要であれば補正指令が周波数・電
圧可変装置６へ送られて水銀灯２には補正された電圧と
周波数が印加される。In the resist curing device having such a configuration, an irradiation intensity command is sent from the arithmetic control bag @ 3 to the frequency/voltage variable device 6 according to a pre-installed process for each type of semiconductor, and the mercury lamp 2 is sent to the mercury lamp 2 according to the command. However, if the value of the ultraviolet irradiation dosimeter 9 that detects the illuminance of the mercury lamp 2 differs from the reference value, the arithmetic and control unit 3 determines whether or not correction is necessary, and if necessary, corrects it. The command is sent to the frequency/voltage variable device 6, and the corrected voltage and frequency are applied to the mercury lamp 2.
したがって、水銀灯のばらつきや点灯時間の経過で照度
が落ちても、半導体ウェハ１上には常にその種類別のプ
ロセスに応じた照度と時間の紫外線を照射することがで
きる。Therefore, even if the illuminance decreases due to variations in the mercury lamp or the elapse of lighting time, the semiconductor wafer 1 can always be irradiated with ultraviolet rays at an illuminance and time appropriate for each type of process.
なお、上記実施例では、水銀灯の紫外線について述べた
が、例えば半導体ウェハの予熱や保温のための赤外線等
についても適用できる。In the above embodiments, ultraviolet rays from a mercury lamp have been described, but the present invention can also be applied to infrared rays for preheating or keeping semiconductor wafers warm, for example.
［発明の効果］
以上、本発明のレジスト硬化装置によれば、半導体ウェ
ハに塗イロされたレジストを水銀灯で硬化するために、
半導体ウェハの近傍に水銀灯が出す紫外線の量を検出す
る紫外線照９Ａ線間計を設け、この紫外線照射線量計で
検出した紫外線の検出量をあらかじめ被照射体の種類に
応じた照射プロセスが設定された演算制御装置へ送って
比較し、その補正値を周波数・電圧可変装置へ送って水
銀灯の放電電圧と周波数を制御したので、水銀灯の特性
のばらつきや経時変化に関係なく、水銀灯をむだにする
ことなく、各種の半導体ウェハに応じて硬化膜の品質を
保証することのできるレジスト硬化装置を１ｑることが
できる。[Effects of the Invention] As described above, according to the resist curing apparatus of the present invention, in order to cure the resist coated on the semiconductor wafer with a mercury lamp,
An ultraviolet light 9A line meter that detects the amount of ultraviolet light emitted by the mercury lamp is installed near the semiconductor wafer, and the amount of ultraviolet light detected by this ultraviolet dosimeter is determined in advance by setting an irradiation process according to the type of object to be irradiated. The mercury lamp is then sent to the arithmetic and control unit for comparison, and the corrected value is sent to the frequency/voltage variable device to control the discharge voltage and frequency of the mercury lamp, so regardless of variations in the characteristics of the mercury lamp or changes over time, the mercury lamp is not wasted. It is possible to provide 1q of resist curing apparatuses that can guarantee the quality of cured films for various types of semiconductor wafers.
第１図は本発明のレジスト硬化装置の一実施例を示す図
、第２図は従来のレジスト硬化装置の一例を示す図であ
る。
１・・・半導体ウェハ
２・・・水銀灯
３・・・演算制御装置
６・・・周波数・電圧可変装置
９・・・紫外線照射線量計
（８７３３）代理人 弁理士 猪 股 祥 晃（ばか
１名）FIG. 1 is a diagram showing an embodiment of a resist curing device of the present invention, and FIG. 2 is a diagram showing an example of a conventional resist curing device. 1... Semiconductor wafer 2... Mercury lamp 3... Arithmetic control device 6... Frequency/voltage variable device 9... Ultraviolet irradiation dosimeter (8733) Agent Patent attorney Yoshiaki Inomata (idiot)
1 person)
Claims (1)
照射して硬化させるレジスト硬化装置において、 前記半導体ウェハの近傍に設けられた紫外線照射量計と
、 あらかじめ設定された半導体ウェハのプロセスに従つた
照射基準が設定され、前記紫外線照射量計の検出量と比
較し演算して照射強度を補正する演算制御装置と、 この補正値に基いて前記水銀灯に印加される電圧と周波
数を増減する周波数・電圧可変装置とを設けたことを特
徴とするレジスト硬化装置。[Scope of Claims] A resist curing device for curing resist coated on a semiconductor wafer by irradiating ultraviolet rays from a mercury lamp, comprising: an ultraviolet irradiation meter provided near the semiconductor wafer; An irradiation standard is set according to the process, and an arithmetic and control device that calculates and corrects the irradiation intensity by comparing it with the amount detected by the ultraviolet irradiation meter; A resist curing device characterized by being provided with a frequency/voltage variable device that increases and decreases.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16881988A JPH0220015A (en) | 1988-07-08 | 1988-07-08 | Resist curing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16881988A JPH0220015A (en) | 1988-07-08 | 1988-07-08 | Resist curing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0220015A true JPH0220015A (en) | 1990-01-23 |
Family
ID=15875094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16881988A Pending JPH0220015A (en) | 1988-07-08 | 1988-07-08 | Resist curing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0220015A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7140711B2 (en) * | 2003-07-21 | 2006-11-28 | 3M Innovative Properties Company | Method and apparatus for inkjet printing using radiation curable ink |
-
1988
- 1988-07-08 JP JP16881988A patent/JPH0220015A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7140711B2 (en) * | 2003-07-21 | 2006-11-28 | 3M Innovative Properties Company | Method and apparatus for inkjet printing using radiation curable ink |
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