JPH0219971Y2 - - Google Patents

Info

Publication number
JPH0219971Y2
JPH0219971Y2 JP1984014852U JP1485284U JPH0219971Y2 JP H0219971 Y2 JPH0219971 Y2 JP H0219971Y2 JP 1984014852 U JP1984014852 U JP 1984014852U JP 1485284 U JP1485284 U JP 1485284U JP H0219971 Y2 JPH0219971 Y2 JP H0219971Y2
Authority
JP
Japan
Prior art keywords
semiconductor element
external lead
connection
lead wire
base electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1984014852U
Other languages
English (en)
Other versions
JPS60129136U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1984014852U priority Critical patent/JPS60129136U/ja
Publication of JPS60129136U publication Critical patent/JPS60129136U/ja
Application granted granted Critical
Publication of JPH0219971Y2 publication Critical patent/JPH0219971Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247—Connecting the strap to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8434—Bonding interfaces of the connector
    • H01L2224/84345—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【考案の詳細な説明】 本考案は半導体素子と外部リード線とを接続す
る接続板を有する半導体装置の構造に関するもの
である。以下図面を参照して説明する。
第１図ａ，ｂは従来装置の平面図及び部分断面
図、又第２図ａ，ｂはその説明図で図中１はベー
ス電極（板）、１ａは外部取付孔、１ｂ及び１ｃ，
１ｄはベース電極１と一体及び分離された外部リ
ード線で夫々ベース電極１とは高低関係に配設さ
れている。２は半導体素子（例えばダイオードチ
ツプ）で一方の電極部が半田２ａによりベース電
極上に接着され、ベース電極１と同様に外部リー
ド線１ｂ乃至１ｄと高低関係に配設されている。
次に３は外部リード線（１ｃ，１ｄ）と半導体素
子１の他方の電極部に夫々半田接続される接続
板、３ａは半導体素子１との接着面に設けた突起
である。以下この装置について第２図を参照して
説明する。ａ図は半導体素子等の組立状態（半田
付前）を示し、４は半田（シート状）である。こ
の状態では接続板３の一端即ち外部リード線１ｃ
との接続面が互いに平行面であり、一方半導体素
子は半田２ａを介してベース電極１と又半田２ｂ
を介して接続板３の突起３ａと夫々上記接続面に
比し小面積で接触状態に置かれている。そこで該
接続板３は両端部が高低差を有して外部リード線
１ｃ及び半導体素子２間で保持され、しかも外部
リード線との接触面が比較的大きいことと相俟つ
て半田溶解時に該接続板３が追随できず、換言す
れば半導体チツプ２が引つ張られて第２図ｂに示
す如く半導体素子２が接続不良を起し、半田２
ａ，２ｂが均一にならず半田の薄い所で接着不良
或は熱疲労不良等の原因となる。またこのことは
ベース電極１と外部リード線１ｃとの折り曲げ高
さや接続板３の加工精度のバラツキも接続不良を
起す原因となつていた。本考案は上記の欠点を解
消し、半田付時の半田の溶解による接続板の下降
追随性を良くするとともに、使用部品の加工精度
のバラツキによる接続板の接続不良を防止した半
導体装置を提供するものである。第３図ａ，ｂは
本考案の実施例図でａ図は組立時（半田付前）、
ｂ図は半田付後の断面図、第４図ａ，ｂは接続板
の斜視図で１はベース電極、２は半導体素子、５
は外部リード線、３は接続板、６は封止樹脂であ
る。前記接続板３は第４図に示すように外部リー
ド線５との接続部が凸起状（ａ図）又はＶ字状
（ｂ図）になつている。即ち第３図ａに示す半田
付前の状態であつても接続板３は自由度をもち従
つて半田２ａ，２ｂ，４の溶解した状態では半導
体素子２は第３図ｂの如く接続部の半田の表面張
力に作用されることなく適性な接続が得られる。
同様にベース電極や接続板の折り曲げ高さのバラ
ツキがあつても突起のあることにより容易に吸収
できる。上記実施例は接続板３の接続部に突起３
ｂを設けた図を示したが外部リード線５の接続部
に同様の突起を設けても同様の効果が得られる。
以上の説明から明らかなように本考案によれば接
続部に突起を設けることにより半田付時の半導体
素子と接続板との接続が部品精度に左右されるこ
となく容易に出来、しかも接続板を使用する他の
半導体装置に容易に応用できる等実用上の効果は
大きい。
【図面の簡単な説明】
第１図、第２図は従来構造図及びその説明図、
第３図、第４図は本考案の一実施例構造図であ
る。 図において１はベース電極（板）、１ａは取付
孔、１ｂ，１ｃ，１ｄは外部リード線、２は半導
体素子、２ａ，２ｂは半田、３は接続板、３ａ，
３ｂは突起部、４は半田、５は外部リード線、６
はモールド樹脂である。

Claims (1)

    【実用新案登録請求の範囲】
  1. ベース電極と、前記ベース電極上に一方の電極
    部が接着された半導体素子と、前記半導体素子と
    高低関係に配設された外部リード線と、前記半導
    体素子の他方の電極部と外部リード線との２点間
    を夫々半田接続する接続板を有する半導体装置に
    おいて、前記接続板の半導体素子との接続面及び
    外部リード線との接続面に突起部を設けたことを
    特徴とする半導体装置。
JP1984014852U 1984-02-03 1984-02-03 半導体装置 Granted JPS60129136U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984014852U JPS60129136U (ja) 1984-02-03 1984-02-03 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984014852U JPS60129136U (ja) 1984-02-03 1984-02-03 半導体装置

Publications (2)

Publication Number Publication Date
JPS60129136U JPS60129136U (ja) 1985-08-30
JPH0219971Y2 true JPH0219971Y2 (ja) 1990-05-31

Family

ID=30500155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984014852U Granted JPS60129136U (ja) 1984-02-03 1984-02-03 半導体装置

Country Status (1)

Country Link
JP (1) JPS60129136U (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2528687Y2 (ja) * 1988-06-06 1997-03-12 日本電信電話株式会社 プレナ−型２端子双方向サイリスタ
JP5398608B2 (ja) * 2010-03-18 2014-01-29 新電元工業株式会社 半導体装置の内部接続構造、及び、半導体装置
US9129931B2 (en) 2011-03-24 2015-09-08 Mitsubishi Electric Corporation Power semiconductor module and power unit device
US10727163B2 (en) * 2016-07-26 2020-07-28 Mitsubishi Electric Corporation Semiconductor device
CN110199387B (zh) * 2017-02-20 2024-03-01 新电元工业株式会社 电子装置以及连接件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512728A (en) * 1978-07-14 1980-01-29 Hitachi Ltd Regin sealing type power transistor
JPS5624964A (en) * 1979-08-08 1981-03-10 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512728A (en) * 1978-07-14 1980-01-29 Hitachi Ltd Regin sealing type power transistor
JPS5624964A (en) * 1979-08-08 1981-03-10 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS60129136U (ja) 1985-08-30

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