JPH02194634A - Manufacture of semiconductor - Google Patents
Manufacture of semiconductorInfo
- Publication number
- JPH02194634A JPH02194634A JP1492189A JP1492189A JPH02194634A JP H02194634 A JPH02194634 A JP H02194634A JP 1492189 A JP1492189 A JP 1492189A JP 1492189 A JP1492189 A JP 1492189A JP H02194634 A JPH02194634 A JP H02194634A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- molded body
- semiconductor
- lid
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229920005989 resin Polymers 0.000 claims abstract description 58
- 239000011347 resin Substances 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000004033 plastic Substances 0.000 claims abstract description 15
- 238000000465 moulding Methods 0.000 claims abstract description 10
- 238000000748 compression moulding Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 13
- 230000006835 compression Effects 0.000 claims description 4
- 238000007906 compression Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 13
- 238000010521 absorption reaction Methods 0.000 abstract description 11
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000945 filler Substances 0.000 description 9
- 238000003466 welding Methods 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000005388 borosilicate glass Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 238000004506 ultrasonic cleaning Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000003365 glass fiber Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000009863 impact test Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
本発明はプラスチック中空パッケージタイプの半導体装
置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a plastic hollow package type semiconductor device.
プラスチック中空パッケージタイプの半導体装置の製造
方法に関する先行技術文献として特開昭５８−４９５３
号公報の実施例に開示されている方法を第２（ａ）図に
より以下に述べる。Japanese Patent Application Laid-Open No. 58-4953 as a prior art document regarding the manufacturing method of a plastic hollow package type semiconductor device
The method disclosed in the example of the publication will be described below with reference to FIG. 2(a).
初めに、リードフレーム２１と一体となるように内部ハ
ラケージ２２をトランスファモールド成形し、半導体素
子２３の装着及びワイヤーボンディングを行う。次に、
透光性部材２４を接着し、さらに内部パッケージ２２及
び透光性部材２４をトランスファモールド法で樹脂封止
してプラスチック中空パッケージタイプの半導体装置を
製造する。First, the inner cage 22 is transfer molded so as to be integrated with the lead frame 21, and the semiconductor element 23 is mounted and wire bonded. next,
The light-transmitting member 24 is adhered, and the inner package 22 and the light-transmitting member 24 are sealed with resin by a transfer molding method to manufacture a plastic hollow package type semiconductor device.
また、別の先行技術文献として実開昭６０−１０３８°
４１号公報に開示されている方法を第２Ｇ）図により以
下に述べる。In addition, as another prior art document, Utility Model Application No. 60-1038°
The method disclosed in Publication No. 41 will be described below with reference to FIG. 2G).
初めに台座２６とリード導体２７を金型に挟み込み第１
のモールド体２８を得る。次に電子部品２９を装着し、
ワイヤボンディングする。更に、蓋体３０を載せ、全体
を金型に入れ、第１のモールド体２８及び蓋体３０の一
部を覆うように第２のモールド体３１で封止してプラス
チック中空パッケージタイプの半導体装置を製造するゆ
〔発明が解決しようとする課題〕
現在、ＦＰ（フラットパッケージ）、ＰＬＣＣ（プラス
チックリープイドチップキャリア）等の薄型の半導体パ
ッケージで、樹脂の吸湿が原因で、ｖＰＳリフロー（ペ
ーパーフェーズソルダリングリフロー）等のはんだ処理
時にパッケージが破損したり、封止性が低下するという
問題点が生じている。First, the pedestal 26 and lead conductor 27 are sandwiched between the molds and the first
A molded body 28 is obtained. Next, the electronic parts 29 are installed,
Wire bonding. Furthermore, the lid body 30 is placed, the whole is put into a mold, and the first mold body 28 and a part of the lid body 30 are covered with a second mold body 31 to seal it, thereby forming a plastic hollow package type semiconductor device. [Problem to be Solved by the Invention] Currently, thin semiconductor packages such as FP (flat package) and PLCC (plastic leaped chip carrier) have problems with vPS reflow (paper phase solder) due to moisture absorption of resin. Problems have arisen in that the package may be damaged during soldering processes such as ring reflow, and the sealing performance may deteriorate.
この問題点は、プラスチック中空パッケージタイプの半
導体装置では、パッケージの吸水率を低下させることと
、はんだ処理の高温時におけるパッケージの強度を増加
させることにより解決される。これらの特性の改善は、
パッケージ材中の充填剤の割合を高くすることにより達
成される。This problem can be solved in plastic hollow package type semiconductor devices by lowering the water absorption rate of the package and increasing the strength of the package at high temperatures during soldering. Improvements in these properties are
This is achieved by increasing the proportion of fillers in the packaging material.
従来の特開昭５８−４９５３号公報に開示されている方
法では、内部パッケージの成形は一般的にトランスファ
モールド成形により行われる。このとき、金型キャビテ
ィ内に溶融樹脂が完全に充填される為には、パッケージ
材料の成形性として、溶融時の流動特性が重要であり、
充填剤として一般的に使用される粒状シリカのパッケー
ジ材料中の体積百分率は約６０％以下に制限されるとと
もにガラスファイバ等のかさ高い充填剤の配合量も制限
され、十分な耐吸湿はんだ性をもつパッケージが得られ
にくいという欠点を有していた。In the conventional method disclosed in JP-A-58-4953, the internal package is generally formed by transfer molding. At this time, in order for the mold cavity to be completely filled with molten resin, the flow characteristics during melting are important for the moldability of the package material.
The volume percentage of granular silica, which is commonly used as a filler, in packaging materials is limited to approximately 60% or less, and the amount of bulky fillers such as glass fibers is also limited, making it difficult to maintain sufficient moisture absorption and solder resistance. It has the disadvantage that it is difficult to obtain a package with a long life.
また、実開昭６０−１０３８４１号公報に開示されてい
る方法では、台座２６を高強度かつ、低吸湿率のものと
することにより耐吸湿はんだ性は改善されるが、台座２
６とリード導体２７は接着されておらず、半導体装置へ
の落下衝撃や、超音波洗浄時等における衝撃で金属細線
３２が断線しやすいという欠点を有していた。Furthermore, in the method disclosed in Japanese Utility Model Application Publication No. 60-103841, moisture absorption solderability is improved by making the pedestal 26 high in strength and low in moisture absorption.
6 and the lead conductor 27 are not bonded to each other, which has the disadvantage that the thin metal wire 32 is likely to break due to a drop impact on the semiconductor device or an impact during ultrasonic cleaning.
本発明は上記の欠点を改善し、耐吸湿はんだ性と耐衝撃
性に優れたプラスチック中空パッケージタイプの半導体
装置の製造方法を提供するものである。The present invention improves the above-mentioned drawbacks and provides a method for manufacturing a plastic hollow package type semiconductor device having excellent moisture absorption soldering resistance and impact resistance.
本発明は、半導体装着部を有するリードフレームを圧縮
成形用金型を有する一対の金型で挟持し、圧縮成形して
上記リードフレームと一体となった樹脂モールド成形体
を成形し、次に、上記リードフレームに半導体装着し金
属細線により配線し、更に、上記樹脂モールド成形体に
蓋体を載せ蓋体圧接金型を有する一対の金型に挟み込み
、上記蓋体と上記樹脂モールド成形体とを圧接しながら
樹脂モールド成形して封止することを特徴とする。In the present invention, a lead frame having a semiconductor mounting portion is sandwiched between a pair of molds having a compression mold, compression molding is performed to form a resin molded body integral with the lead frame, and then, A semiconductor is mounted on the lead frame and wired with thin metal wires, and then a lid is placed on the resin molded body and sandwiched between a pair of molds having a lid pressure welding mold, and the lid and the resin molded body are bonded together. It is characterized by resin molding and sealing while press-welding.
以下、本発明を第１ （ａ）図〜第１色）図により説明
する。Hereinafter, the present invention will be explained with reference to FIG. 1(a) to first color).
初めに、半導体装着部７を有するリードフレーム４を、
圧縮成形用上金型３を有する中金型ｌと下金型２とで挟
持し、成形用樹脂５を上金型３で圧縮成形して（第１（
ａ）図）、リードフレーム４の外端が側面に露出し、半
導体装着部７の周囲に枠体を有する樹脂モールド成形体
６を成形する（第１ （ｂ）図）。このとき、圧縮成形
するため成形用樹脂５すなわち樹脂モールド成形体６用
の樹脂に配合する充填剤量の好ましい範囲として、粒状
シリカ及び／又はガラスファイバ等の充填剤を体積百分
率で６０％以上使用すると樹脂モールド成形体６の高強
度化、低吸水率化、低線膨張係数化が図られる。ガラス
ファイバの使用は、はんだ処理時に相当する２１５℃〜
２６５°Ｃの高温時での強度を大幅に増大させる。First, the lead frame 4 having the semiconductor mounting part 7 is
It is held between a middle mold l having an upper mold 3 for compression molding and a lower mold 2, and the molding resin 5 is compression molded with the upper mold 3 (first (
(a)), a resin molded body 6 is formed in which the outer end of the lead frame 4 is exposed on the side surface and has a frame around the semiconductor mounting portion 7 (FIG. 1(b)). At this time, the preferable range of the amount of filler to be added to the molding resin 5, that is, the resin for the resin molded product 6 for compression molding, is to use fillers such as granular silica and/or glass fiber in a volume percentage of 60% or more. As a result, the resin molded body 6 can be made to have high strength, low water absorption, and low coefficient of linear expansion. When using glass fiber, the temperature is 215°C or higher, which corresponds to the soldering process.
Significantly increases strength at high temperatures of 265°C.
次に、リードフレーム４に半導体８を装着し金属細線９
により配線する（第１（Ｃ）図）、更に、樹脂モールド
成形体６の枠体に樹脂やセラミックあるいは金属製等の
蓋体ｌＯを半導体８の上部にキャビティ１６を有するよ
うに載せる。これを蓋体圧接合型１３を有する上金型１
１と下金型１２との間に挟み込む（第１（ｄ）図）。蓋
体圧接金型１３と下金型１２により、蓋体１０と樹脂モ
ールド成形体６とを圧接しながらトランスファ成形法等
で樹脂モールド成形して樹脂モールド成形層１５を樹脂
モールド成形体６と蓋体１０の一部を覆うように設け、
キャビティ１６を気密封止する（第１（ｅ）図）。この
とき、第１ （ｄ）図に示したように、上金型１１と蓋
体圧接金型１３との間にバネ１４を設け、蓋体圧接金型
１３と下金型１２により蓋体１０と樹脂モールド成形体
６とを圧接する圧力を、蓋体ｌＯと樹脂モールド成形体
６との圧接部からキャビティ１６内にモールド樹脂が流
れ込むことなく、かつ、蓋体１０と樹脂モールド成形体
６とに過度の応力がかからないように調節するとよい。Next, the semiconductor 8 is attached to the lead frame 4, and the thin metal wire 9
Then, a lid lO made of resin, ceramic, metal, or the like is placed on the frame of the resin molded body 6 so as to have a cavity 16 above the semiconductor 8. This is the upper mold 1 having the lid body pressure joining mold 13.
1 and the lower mold 12 (FIG. 1(d)). Using the lid pressure welding mold 13 and the lower mold 12, the lid 10 and the resin molded body 6 are pressed together and resin molded by a transfer molding method or the like, and the resin molded layer 15 is bonded to the resin molded body 6 and the lid. Provided to cover a part of the body 10,
The cavity 16 is hermetically sealed (FIG. 1(e)). At this time, as shown in FIG. 1(d), a spring 14 is provided between the upper mold 11 and the lid pressure welding mold 13, and the lid pressure welding mold 13 and the lower mold 12 The pressure that presses the lid body 10 and the resin molded body 6 into pressure contact with each other is applied so that the mold resin does not flow into the cavity 16 from the pressure contact portion between the lid body 10 and the resin molded body 6, and the pressure that presses the lid body 10 and the resin molded body 6 It is best to adjust it so that excessive stress is not applied to it.
また、第１ （ｆ）図に示したように、半導体８をＥＰ
ＲＯＭ半導体１８とし、蓋体１０をホウケイ酸ガラス、
石英等の紫外線透過性窓材１７とすることにより、ＥＰ
ＲＯＭ半導体装置が得られる。このとき、第１（樽図及
び第１（ハ）図に示したように蓋体の一部のみを紫外線
透過性窓材１７としてもよい。Further, as shown in FIG. 1(f), the semiconductor 8 is
The ROM semiconductor 18 is made of borosilicate glass, and the lid 10 is made of borosilicate glass.
By using an ultraviolet-transparent window material 17 such as quartz, EP
A ROM semiconductor device is obtained. At this time, as shown in the first (barrel) figure and the first (c) figure, only a part of the lid body may be made of the ultraviolet-transparent window material 17.
上記の樹脂モールド成形体６、蓋体１０及び樹脂モール
ド成形層１５には熱可塑性樹脂と熱硬化性樹脂のいずれ
も使用できるが、耐熱性に優れているエポキシ樹脂等の
熱硬化性樹脂の方が好ましい。Both thermoplastic resins and thermosetting resins can be used for the resin molded body 6, lid body 10, and resin molded layer 15, but thermosetting resins such as epoxy resins, which have excellent heat resistance, are preferable. is preferred.
また、リードフレーム４は樹脂モールド成形体６及び樹
脂モールド成形層１５との接着力が十分であればよく、
材質、形状等を制限しない。Further, the lead frame 4 only needs to have sufficient adhesive strength with the resin molded body 6 and the resin molded layer 15.
There are no restrictions on material, shape, etc.
本発明によれば、樹脂モールド成形体６を圧縮成形して
成形することにより、モールド成形材中の充填剤量を、
従来法に比べ多くすることが可能であり、また、リード
フレーム４が樹脂モールド成形体６に圧接されているの
で、半導体装置への落下衝撃や超音波洗浄時等における
衝撃による断線発生率が小さく、耐吸湿はんだ性と耐衝
撃性に優れた信頼性の高いプラスチック中空バ・ンケー
ジタイプの半導体装置が得られる。According to the present invention, by compression molding the resin molded body 6, the amount of filler in the molding material can be reduced.
In addition, since the lead frame 4 is pressure-welded to the resin molded body 6, the probability of wire breakage due to impact caused by dropping the semiconductor device or during ultrasonic cleaning is low. , a highly reliable plastic hollow package type semiconductor device with excellent moisture absorption soldering resistance and impact resistance can be obtained.
実施例１
第１（ａ）図〜第１（ｆ）図に本発明による半導体装置
の製造方法の一例を示す。第１ （ａ）図に示したよう
に半導体装着部７を有するリードフレーム４（４２７０
イ製）に成形用樹脂５としてエポキシ樹脂（充填剤は体
積百分率で粒状シリカ３０％、ガラスファイバ４０％）
を圧縮成形し、第１ （ｂ）図に示したリードフレーム
４の外端が側面に露出し半導体装着部７の周囲に枠体を
有する樹脂モールド成形体６を成形した。このとき、エ
ポキシ樹脂は粉状のものを圧縮しタブレット状にしたも
のを、圧縮成形前に高周波プレヒータで予熱し、圧縮成
形時になるべく均一に溶融するようにした。次に第１（
Ｃ）図に示したようにリードフレーム４の半導体装着部
７に半導体８を装着し金属細線９（金線）による配線を
行った。更に、第１（ｄ）図に示したように、樹脂モー
ルド成形体６の枠体にアルミナセラミック類の蓋体１０
を半導体８の上部にキャビティ１６を有するように載せ
、蓋体圧接金型１３と下金型１２によって樹脂モールド
成形体６と蓋体１０を圧接しなからエポキシ樹脂（日立
化成工業株式会社製 品名ＣＥＬ−Ｆ−７５７ＰＨ）に
よるトランスファ成形を行い、樹脂モールド成形体６と
蓋体１０の一部を覆うように樹脂モールド成形層１５を
成形し、第１（ｅ）図に示したプラスチック中空パッケ
ージタイプの半導体装置を得た。Example 1 An example of a method for manufacturing a semiconductor device according to the present invention is shown in FIGS. 1(a) to 1(f). As shown in FIG. 1(a), a lead frame 4 (4270
Epoxy resin as the molding resin 5 (fillers are 30% granular silica and 40% glass fiber in volume percentage)
was compression molded to form a resin molded body 6 having the outer end of the lead frame 4 exposed on the side surface and a frame around the semiconductor mounting portion 7 as shown in FIG. 1(b). At this time, the epoxy resin was compressed into a tablet form in powder form, and was preheated with a high-frequency preheater before compression molding, so that it would be melted as uniformly as possible during compression molding. Next, the first (
C) As shown in the figure, the semiconductor 8 was mounted on the semiconductor mounting portion 7 of the lead frame 4, and wiring was performed using thin metal wires 9 (gold wires). Furthermore, as shown in FIG. 1(d), a cover body 10 made of alumina ceramic is attached to the frame body of the resin molded body 6.
is placed on the top of the semiconductor 8 so as to have a cavity 16, and the resin molded body 6 and the lid 10 are pressed together using the lid pressure welding mold 13 and the lower mold 12, and then an epoxy resin (manufactured by Hitachi Chemical Co., Ltd. product name CEL-F-757PH), and a resin molding layer 15 is formed so as to cover a part of the resin molding 6 and the lid 10, thereby forming the plastic hollow package type shown in FIG. 1(e). A semiconductor device was obtained.
上記の実施例で蓋体圧接合型１３と下金型１２で蓋体１
０と樹脂モールド成形体６を圧接するときの圧力は、蓋
体１０と樹脂モールド成形体６との圧接部からキャビテ
ィ１６内にモールド樹脂が流れ込むことなく、かつ、蓋
体１０と樹脂モールド成形体６に過度の応力がかからな
いように、第１ （ｄ）図に示したように、バネ１４で
蓋体圧接金型１３の力を調節した。In the above embodiment, the lid body 1 is connected to the lid body pressure joining mold 13 and the lower mold 12.
0 and the resin molded body 6 are pressed together so that the mold resin does not flow into the cavity 16 from the press contact portion between the lid body 10 and the resin molded body 6, and the pressure is such that the lid body 10 and the resin molded body 6 are pressed together. In order to prevent excessive stress from being applied to the lid member 6, the force of the lid pressure welding mold 13 was adjusted using a spring 14, as shown in FIG. 1(d).
第１表にプレッシャーフッカ試験（１２１℃、１９．６
Ｎ／ｃｄ）で２０時間処理し、■ＰＳリフロー（２１５
°Ｃ９０秒間）を行った時のグロスリーク試験（Ｍ Ｉ
Ｌ−３ＴＤ−７５０Ｃに規定された試験法）の結果を
示した。Table 1 shows the pressure hooker test (121℃, 19.6
N/cd) for 20 hours, and PS reflow (215
Gross leak test (MI
The results of the test method specified in L-3TD-750C are shown.
第１表より良好な結果であった。The results were better than those in Table 1.
第２表に落下衝撃試験（高さ５０ｃｍからプラスチック
タイルに２０回落下）と超音波洗浄試験（溶剤中で１０
分間洗浄）により金属細線の断線のチエツクを行った結
果を示した。Table 2 shows the drop impact test (20 drops on plastic tiles from a height of 50 cm) and the ultrasonic cleaning test (10 drops in a solvent).
The results of checking for breaks in thin metal wires are shown below.
第２表より良好な結果であった。The results were better than those shown in Table 2.
実施例２
上記の実施例１の蓋体１０を第１（ｆ）図に示したよう
にホウケイ酸ガラス製の紫外線透過性窓材１７にしＥＰ
ＲＯＭ半導体１８を装着することによりプラスチック中
空パッケージタイプのＥＰＲＯＭ半導体装置を得た。Example 2 The lid 10 of Example 1 above was converted into an ultraviolet-transparent window material 17 made of borosilicate glass as shown in FIG. 1(f) and EP
By mounting the ROM semiconductor 18, a plastic hollow package type EPROM semiconductor device was obtained.
第１表及び第２表の試験結果は良好であった。The test results in Tables 1 and 2 were good.
比較例１
第２（ａ）図に構造を示した特開昭５８−４９５３号公
報に開示されている方法により半導体装置を製造し比較
例とした。このとき、内部パッケージ２２及び樹脂封止
体２５は、上記実施例１及び２で樹脂モールド成形体６
に使用したエポキシ樹脂では未充填となったので、充填
剤を粒状シリカ５０％（体積百分率）としたものを使用
した。透光性部材２４はホウケイ酸ガラス製のものを使
用した。第１表の試験結果は不良率７６％であった。Comparative Example 1 A semiconductor device was manufactured by the method disclosed in Japanese Patent Application Laid-open No. 58-4953, the structure of which is shown in FIG. 2(a), as a comparative example. At this time, the internal package 22 and the resin sealing body 25 are the same as the resin molded body 6 in the first and second embodiments.
Since the epoxy resin used in the above was not filled, a filler containing 50% (volume percentage) granular silica was used. The transparent member 24 was made of borosilicate glass. The test results in Table 1 showed a defective rate of 76%.
この不良箇所はパッケージの底板部で、クラックが発生
していた。The defective part was the bottom plate of the package, where a crack had occurred.
第２表の試験結果は良好であった。The test results in Table 2 were good.
比較例２
第２ （ｂ）図に構造を示した実開昭６０−１０３８４
１号公報に開示されている方法により半導体装置を製造
し比較例とした。台座２６は上記実施例１及び２で樹脂
モールド成形体６に使用したエポキシ樹脂と同一組成の
ものを成形し使用した。また、第１のモールド体２８と
第２のモールド体３１は上記エポキシ樹脂で充填剤のみ
を粒状シリカ５０％（体積百分率）としたものを使用し
た。蓋体３０はホウケイ酸ガラス製のものを使用した。Comparative Example 2 Utility Model Application No. 60-10384 whose structure is shown in Figure 2 (b)
A semiconductor device was manufactured by the method disclosed in Publication No. 1 and used as a comparative example. The pedestal 26 was molded from an epoxy resin having the same composition as that used for the resin molded body 6 in Examples 1 and 2 above. Further, the first mold body 28 and the second mold body 31 were made of the above-mentioned epoxy resin with only the filler being 50% (volume percentage) of granular silica. The lid 30 was made of borosilicate glass.
第１表の試験結果は良好であったが、第２表の試験結果
より不良率は落下衝撃試験で１０％、超音波洗浄試験で
４８％であった。The test results in Table 1 were good, but the test results in Table 2 showed that the defective rate was 10% in the drop impact test and 48% in the ultrasonic cleaning test.
第１表
プレッシャークッ力試験（１２１°Ｃ，１９，６Ｎ／ｃ
ｆｆｌ）を２０時間行った試料をＶＰＳリフロー（２１
５°Ｃ１９０秒）した時のグロスリーク試験の不良率（
％）
（試料数は各５０個）
（以下余白）
第２表
落下衝撃試験（高さ５０ｃｍからプラスチックタイルに
２０回落下）と超音波洗浄試験（溶剤中で１０分間洗浄
）による金属細線の断線不良率（％）
（試料数は各５０個）
〔発明の効果〕
本発明によれば、樹脂モールド成形体を圧縮成形により
成形するため、従来のプラスチック中空パッケージタイ
プの半導体装置では成し得なかった、耐吸湿はんだ性の
向上と、金属細線の断線の防止を同時に達成することが
でき、信顛性の高い半導体装置が得られる。Table 1 Pressure cooking force test (121°C, 19.6N/c
ffl) for 20 hours was subjected to VPS reflow (21
Failure rate of gross leak test (5°C 190 seconds)
%) (Number of samples: 50 each) (Below, blank spaces) Table 2: Breakage of thin metal wires due to drop impact test (dropped 20 times onto plastic tiles from a height of 50 cm) and ultrasonic cleaning test (washed in solvent for 10 minutes) Defective rate (%) (Number of samples: 50 each) [Effects of the invention] According to the present invention, since the resin molded body is molded by compression molding, it is possible to achieve an improvement that cannot be achieved with conventional plastic hollow package type semiconductor devices. In addition, it is possible to simultaneously improve the moisture absorption solderability and prevent the thin metal wire from breaking, resulting in a highly reliable semiconductor device.
第１ （ａ）〜（ｄ）は本発明方法による製造工程の一
実施例を示す半導体装置の断面図、第１（ｅ）〜（ハ）
図は本発明の実施例を示す半導体装置の断面図、第２（
ａ）、（ｂ）図は従来の半導体装置の断面図である。
中金型
上金型
成形用樹脂
半導体装着部
金属細線
符号の説明
２ 下金型
４ リードフレーム
６ 樹脂モールド成形体
８ 半導体
１０ Ｍ体
上金型 １２
蓋体圧接金型 １４
樹脂モールド成形層１６
紫外線透過性窓材 １８
樹脂製蓋体 ２０
リードフレーム ２２
半導体素子 ２４
樹脂封止体 ２６
リード導体 ２８
電子部品 ３０
第２のモールド体 ３２
下金型
バネ
キャビティ
ＥＰＲＯＭ半導体
セラミック製蓋体
内部パッケージ
透光性部材
台座
第１のモールド体
蓋体
金属細線
第１（ｂ）図
３上ｊｋ！
第１（Ｏ）図
第１（Ｃ）図
第１ｔｄ）！！１Part 1 (a) to (d) are cross-sectional views of a semiconductor device showing an embodiment of the manufacturing process according to the method of the present invention, and Part 1 (e) to (c)
The figure is a cross-sectional view of a semiconductor device showing an embodiment of the present invention.
Figures a) and (b) are cross-sectional views of conventional semiconductor devices. Explanation of the metal fine wire code for the resin semiconductor attachment part for molding the middle mold and upper mold 2 Lower mold 4 Lead frame 6 Resin molded body 8 Semiconductor 10 M body upper mold 12 Lid body pressure welding mold 14 Resin molding layer 16 Ultraviolet rays Transparent window material 18 Resin lid 20 Lead frame 22 Semiconductor element 24 Resin seal 26 Lead conductor 28 Electronic component 30 Second mold body 32 Lower mold spring cavity EPROM semiconductor ceramic lid internal package Transparent member Pedestal 1st mold body Lid body Fine metal wire 1st (b) Figure 3 top jk! Figure 1 (O) Figure 1 (C) Figure 1 td)! ! 1
Claims (1)
金型を有する一対の金型で挟持し、圧縮成形して上記リ
ードフレームと一体となった樹脂モールド成形体を成形
し、次に、上記リードフレームに半導体を装着し金属細
線により配線し、更に、上記樹脂モールド成形体に蓋体
を載せ蓋体圧接金型を有する一対の金型に挟み込み、上
記蓋体と上記樹脂モールド成形体とを圧接しながら樹脂
モールド成形して封止することを特徴とするプラスチッ
ク中空パッケージタイプの半導体装置の製造方法。 ２、半導体がＥＰＲＯＭ半導体であり、蓋体が紫外線透
過性窓を有するものである請求項１記載の半導体装置の
製造方法。[Claims] 1. A lead frame having a semiconductor mounting portion is held between a pair of molds having a compression mold, and compression molding is performed to form a resin molded body integral with the lead frame. Next, a semiconductor is mounted on the lead frame and wired with thin metal wires, and then a lid is placed on the resin molded body and sandwiched between a pair of molds having a lid press mold, and the lid and the resin are sandwiched between a pair of molds. A method for manufacturing a plastic hollow package type semiconductor device, characterized in that the semiconductor device is sealed by resin molding while being in pressure contact with a molded body. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor is an EPROM semiconductor, and the lid has an ultraviolet-transparent window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1492189A JPH02194634A (en) | 1989-01-24 | 1989-01-24 | Manufacture of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1492189A JPH02194634A (en) | 1989-01-24 | 1989-01-24 | Manufacture of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02194634A true JPH02194634A (en) | 1990-08-01 |
Family
ID=11874427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1492189A Pending JPH02194634A (en) | 1989-01-24 | 1989-01-24 | Manufacture of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02194634A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012039024A (en) * | 2010-08-11 | 2012-02-23 | Fujitsu Semiconductor Ltd | Method of manufacturing semiconductor device and semiconductor manufacturing device |
| JP2012049414A (en) * | 2010-08-30 | 2012-03-08 | Towa Corp | Method and apparatus for manufacturing resin encapsulation molded article having substrate exposure face |
-
1989
- 1989-01-24 JP JP1492189A patent/JPH02194634A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012039024A (en) * | 2010-08-11 | 2012-02-23 | Fujitsu Semiconductor Ltd | Method of manufacturing semiconductor device and semiconductor manufacturing device |
| JP2012049414A (en) * | 2010-08-30 | 2012-03-08 | Towa Corp | Method and apparatus for manufacturing resin encapsulation molded article having substrate exposure face |
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