JPH02191327A - Method and apparatus for collecting impurity on semiconductor substrate surface - Google Patents
Method and apparatus for collecting impurity on semiconductor substrate surfaceInfo
- Publication number
- JPH02191327A JPH02191327A JP867189A JP867189A JPH02191327A JP H02191327 A JPH02191327 A JP H02191327A JP 867189 A JP867189 A JP 867189A JP 867189 A JP867189 A JP 867189A JP H02191327 A JPH02191327 A JP H02191327A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- semiconductor substrate
- pure water
- impurities
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 47
- 239000012535 impurity Substances 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000000605 extraction Methods 0.000 claims description 14
- 238000003672 processing method Methods 0.000 claims 1
- 238000011084 recovery Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 11
- 238000004458 analytical method Methods 0.000 abstract description 10
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 238000004255 ion exchange chromatography Methods 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract 2
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 210000002414 leg Anatomy 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
「発明の目的］
（産業上の利用分野）
本発明は半導体基板表面の不純物回収方法及び装置に関
する。DETAILED DESCRIPTION OF THE INVENTION Object of the Invention (Field of Industrial Application) The present invention relates to a method and apparatus for recovering impurities from the surface of a semiconductor substrate.
（従来の技術）
半導体素子の製造工程にはプラズマエツチング、剥離等
があるが、これらに用いる装置は原料ガスに塩素、弗素
等を使用するため、例えば配線材に腐蝕の発生が起こり
素子の電気的特性及び信頼性に大きな影響を与える。従
って、素子特性を向上させるためには半導体基板表面に
残存するこれら塩素、弗素等の不純物を充分に取り除く
ことが重要であり、このため半導体基板表面に残存する
前記不純物の総量を正確に把握することが必要である。(Prior art) The manufacturing process of semiconductor devices involves plasma etching, peeling, etc., but since the equipment used for these uses chlorine, fluorine, etc. as raw material gas, corrosion may occur in the wiring material, and the electricity of the device may be damaged. This has a significant impact on physical characteristics and reliability. Therefore, in order to improve device characteristics, it is important to sufficiently remove impurities such as chlorine and fluorine remaining on the surface of the semiconductor substrate, and for this reason, it is necessary to accurately grasp the total amount of impurities remaining on the surface of the semiconductor substrate. It is necessary.
従来、半導体基板表面の不純物の総量を知るためには、
主にオージェ電子分光（以下ｒＡＥｓＪという。）や電
気特性評価法を用いていた。しかしながら、ＡＥＳはス
ポット分析であるため、半導体基板表面の不純物の総量
は数点の分析による平均値でしか分らない欠点があった
。また、電気特性評価法は不良の発生が何に原因してい
るのか分らず、半導体基板表面の不純物の総量を正確に
把握することができない欠点があった。Conventionally, in order to know the total amount of impurities on the surface of a semiconductor substrate,
Auger electron spectroscopy (hereinafter referred to as rAEsJ) and electrical property evaluation methods were mainly used. However, since AES is a spot analysis, it has the disadvantage that the total amount of impurities on the surface of a semiconductor substrate can only be determined by an average value obtained by analyzing several points. Furthermore, the electrical characteristic evaluation method has the disadvantage that it is not possible to determine the cause of defects, and it is not possible to accurately determine the total amount of impurities on the surface of the semiconductor substrate.
（発明が解決しようとする課題）
このように、従来は半導体基板表面の不純物の総量を正
確に把握することができず、素子特性の向上の妨げとな
っていた。(Problems to be Solved by the Invention) As described above, in the past, it was not possible to accurately grasp the total amount of impurities on the surface of a semiconductor substrate, which hindered improvement of device characteristics.
よって、本発明の目的は、半導体基板表面の不純物の総
量を簡便かつ高感度に分析できる半導体基板表面の不純
物回収方法及び装置を提供することである。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method and apparatus for recovering impurities on the surface of a semiconductor substrate, which can easily and highly sensitively analyze the total amount of impurities on the surface of a semiconductor substrate.
［発明の構成］
（課題を解決するための手段）
上記目的を達成するために、本発明においては、半導体
基板をカセットの基板保持部に収納した後、前記カセッ
トを抽出容器上に配置する。これにより、前記基板保持
部が純水の入った水槽中へ挿入され、前記半導体基板の
一生表面のみが純水に接触する。この後、蓋をして一定
時間このままで放置しておき前記半導体基板の一生表面
に存在する不純物を前記純水中へ抽出する。そして、カ
セットを抽出容器から分離した後、得られた抽出液を例
えばイオンクロマドログラフィーにて分析するというも
のである。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, in the present invention, after a semiconductor substrate is stored in a substrate holding portion of a cassette, the cassette is placed on an extraction container. As a result, the substrate holder is inserted into a water tank containing pure water, and only the surface of the semiconductor substrate comes into contact with the pure water during its lifetime. Thereafter, the solution is covered with a lid and left as it is for a certain period of time to extract impurities present on the surface of the semiconductor substrate throughout its life into the pure water. After separating the cassette from the extraction container, the resulting extract is analyzed, for example, by ion chromatography.
（作用）
このような方法及び装置を用いれば、半導体基板の一生
表面に存在する不純物を純水により抽出し、得られた抽
出液について不純物の分析を行なうので前記不純物の総
量を簡便かつ高感度に測定することができる。(Function) If such a method and apparatus are used, impurities that exist on the surface of a semiconductor substrate during its lifetime are extracted with pure water, and the obtained extract is analyzed for impurities, so the total amount of impurities can be easily and highly sensitively analyzed. can be measured.
（実施例）
以下、図面を参照して本発明の一実施例を詳細に説明す
る。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図は本発明の方法を実施するための装置の一例を示
し、第２図は前記第１図の１−１’断面を示している。FIG. 1 shows an example of an apparatus for carrying out the method of the present invention, and FIG. 2 shows a cross section taken along line 1-1' of FIG.
この装置は抽出容器１、カセット ２及び蓋３の各部分
から構成されている。抽出容器１は一方向へ等間隔で設
けられた仕切りにより区分された複数の水槽４，４・・
・を有している。This device consists of an extraction vessel 1, a cassette 2, and a lid 3. The extraction container 1 has a plurality of water tanks 4, 4, divided by partitions provided at equal intervals in one direction.
·have.
各水槽４．４・・・の底はＵ字型になっており、また、
抽出容３１には足５が設けられている。なお、缶水ｔ６
４．４・・・の底はＵ字型のようにウェーハの形と同様
になっているのがよいが、角張っていなければこれに限
られない。カセット ２は水槽４．４・・・に対応させ
て、これと同数がっ等間隔に設けられた基板保持部８．
６・・・を有している。基板保持部６．６・・・には
ウェーハ（半導体基板）７゜７・・・がその片面を基板
保持部６．６・・・に密着させて収納される。また、抽
出容器Ｉとカセット ２とを組み合わせる、すなわちカ
セット ２を抽出容器ｌ上へ配置することにより、基板
保持部６，６・・・を水槽４，４・・・へ挿入できる。The bottom of each tank 4.4... is U-shaped, and
The extraction chamber 31 is provided with legs 5. In addition, canned water T6
4. It is preferable that the bottom of the 4... be U-shaped, similar to the shape of the wafer, but it is not limited to this as long as it is not angular. The cassette 2 has the same number of substrate holders 8.4 provided at equal intervals in correspondence with the water tanks 4.4.
It has 6... Wafers (semiconductor substrates) 7.7 are stored in the substrate holding parts 6.6 with one side of the wafers (semiconductor substrates) in close contact with the substrate holding parts 6.6. Further, by combining the extraction container I and the cassette 2, that is, by placing the cassette 2 on the extraction container I, the substrate holding parts 6, 6, . . . can be inserted into the water tanks 4, 4, .
次に、本発明の方法を前記第１図の装置に実施した場合
について同図を参照しつつ説明する。Next, a case in which the method of the present invention is applied to the apparatus shown in FIG. 1 will be described with reference to the same figure.
まず、試料としてのウェーハ７．７・・・を基板保持部
６．ト・・に収納する。このとき、ウェーハ７．７・・
・は不純物分析を行なう一生表面を露出させ、その裏面
を基板保持部６．Ｂ・・・に密着させて収納される。ま
た、抽出容器１の各水槽４．４・・・にはそれぞれ純水
を５０ｍ１程度入れる。次に、カセット ２を抽出容器
ｌ上に配置してウェーハＢ。First, a wafer 7.7 as a sample is placed in the substrate holder 6. Store it in... At this time, 7.7 wafers...
・Exposes the surface for which impurity analysis is to be performed, and places the back surface on the substrate holder 6. It is stored in close contact with B... Further, approximately 50 ml of pure water is poured into each water tank 4, 4, . . . of the extraction container 1. Next, the cassette 2 is placed on the extraction vessel L and the wafer B is removed.
Ｂ・・・を純水の満たされた水槽４，４・・・の中へ挿
入する。さらに、純水が蒸発するのを防ぐため蓋３をし
、約３０分間放置してお（（この状態での装置の縦断面
図を第３図に示す。）。これにより、ウェーハ７．７・
・・の−主表面に存在する不純物は純水中に抽出される
。なお、分析に必要のないつニーハフ、７・・・の裏面
は基板保持部６．６・・・に密着しているため純水には
接しない。この後、カセット ２を抜き取り、各水槽４
，４・・・に順にイオンクロマドログラフィー（図示せ
ず）の注入チューブを差し込んでそれぞれについて不純
物の分析を行なう。ここで、前記注入チューブは底が丸
くなった缶水′＃ｆ１４．４・・・の中央部に置くこと
により抽出液（不純物抽出後の純水）を無駄なく分析で
きる。ところで、これら一連の操作はクリーンルーム内
の清浄な環境の下で行なわれる。Insert B... into the water tanks 4, 4... filled with pure water. Furthermore, to prevent the pure water from evaporating, cover the lid 3 and leave it for about 30 minutes (a vertical cross-sectional view of the apparatus in this state is shown in Figure 3).・
The impurities present on the main surface of... are extracted into the pure water. Note that the back surfaces of the knee halves 7, which are not necessary for analysis, are in close contact with the substrate holding parts 6, 6, and do not come into contact with the pure water. After this, remove the cassette 2 and
, 4, . . . are sequentially inserted into injection tubes of ion chromadrography (not shown), and impurity analysis is performed on each of them. Here, by placing the injection tube in the center of a can of water with a rounded bottom, the extract (pure water after impurity extraction) can be analyzed without waste. By the way, these series of operations are performed in a clean environment in a clean room.
次に、半導体素子の製造工程の一例として、第４図に示
すようにＲＩＥ工程を経た基板Ａ並びにこのＲＩＥ工程
の後処理工程（１）及び（■）を経た基板Ｂ及びＣにつ
いて本発明の方法による不純物分析を行い、また、それ
ぞれについて配線等の腐蝕の有無を調べてみた。その結
果、第５図に示すような図表を得ることができた。同図
に示すようにＲＩＥ工程を経たのちに後処理工程（１）
及び（ｎ）を施すこにより半導体基板の一生表面に存在
する不純物（塩素）１１が減少することがわかった。ま
た、分析後に基板ＡＳＢ及びＣを光学顕微鏡で観察した
ら基板Ａ及びＢでは腐蝕が発生していたが、基板Ｃでは
腐蝕が発生してしていなかった。従って、後処理（ＩＩ
）を行なったあとの不純物レベルであれば素子特性に影
響を与えることがないことが分った。Next, as an example of the manufacturing process of a semiconductor element, as shown in FIG. 4, substrate A that has undergone an RIE process and substrates B and C that have undergone post-processing steps (1) and (■) of this RIE process will be described. We conducted an impurity analysis using different methods, and also examined whether there was corrosion in the wiring, etc. As a result, we were able to obtain a diagram as shown in Figure 5. As shown in the figure, after the RIE process, there is a post-processing process (1).
It has been found that impurity (chlorine) 11 present on the surface of the semiconductor substrate throughout its life can be reduced by applying (n). Furthermore, when substrates ASB and C were observed under an optical microscope after analysis, corrosion had occurred on substrates A and B, but no corrosion had occurred on substrate C. Therefore, post-processing (II
) was found to have no effect on device characteristics if the impurity level remains the same.
このように、半導体基板の一生表面に存在する不純物量
を正確に把握し、適切な後処理を施すことにより素子特
性の向上を達成することができる。In this way, by accurately grasping the amount of impurities present on the surface of a semiconductor substrate during its lifetime and performing appropriate post-treatment, it is possible to improve device characteristics.
［発明の効果］
以上、説明したように、本発明の半導体基板表面の不純
物回収方法及び装置を用いれば次のような効果を奏する
。[Effects of the Invention] As explained above, the following effects can be achieved by using the method and apparatus for recovering impurities from the surface of a semiconductor substrate of the present invention.
半導体基板の一生表面のみを純水に接触させて不純物の
抽出を行なうことにより、前記半導体基板の一生表面に
存在する不純物の総量を、この後の分析で正確に知るこ
とができる。また、−度に多量の半導体基板を分析処理
できるため作業性が良く、抽出時間による不純物量のバ
ラツキも少なくなる。さらに、適量の純水に不純物を抽
出しているため高感度の分析が行なえ、腐蝕の発生しな
いレベルにおいても不純物分析ができるようになる。従
って、半導体素子の製造工程ごとに不純物量を調べるこ
とができ不純物量の管理ができるようになる。By bringing only the lifetime surface of the semiconductor substrate into contact with pure water to extract impurities, the total amount of impurities present on the lifetime surface of the semiconductor substrate can be accurately determined through subsequent analysis. Further, since a large amount of semiconductor substrates can be analyzed and processed at one time, work efficiency is improved, and variations in the amount of impurities due to extraction time are reduced. Furthermore, since impurities are extracted into an appropriate amount of pure water, highly sensitive analysis can be performed, and impurity analysis can be performed even at a level that does not cause corrosion. Therefore, the amount of impurities can be checked for each manufacturing process of a semiconductor element, and the amount of impurities can be managed.
第１図は本発明の一実施例に係わる半導体基板表面の不
純物回収方法を実施するための装置を示す斜視図、第２
図は前記第１図の１−１’断面を示す要部断面図、第３
図は前記第１図に示す装置により半導体基板表面の不純
物を抽出している状態を示す縦断面図、第４図は半導体
素子の製造工程の一例を示す工程図、第５図は前記第４
図に示す工程で得られる基板Ａ％Ｂ及びＣについて、本
発明の方法により分析した不純物量と腐蝕の発生との関
係を示す図表である。
■・・・抽出容器、２・・・カセット、３・・・蓋、４
・・・水槽、５・・・足、６・・・基板保持部、７・・
・ウェーハ。
出願人代理人 弁理士 鈴江武彦FIG. 1 is a perspective view showing an apparatus for carrying out a method for recovering impurities on the surface of a semiconductor substrate according to an embodiment of the present invention;
The figure is a cross-sectional view of the main part showing the section 1-1' of the above-mentioned figure 1,
The figure is a vertical cross-sectional view showing the state in which impurities on the surface of a semiconductor substrate are extracted by the apparatus shown in FIG.
1 is a chart showing the relationship between the amount of impurities and the occurrence of corrosion analyzed by the method of the present invention for substrates A%B and C obtained in the steps shown in the figure. ■... Extraction container, 2... Cassette, 3... Lid, 4
...water tank, 5...legs, 6...board holding part, 7...
・Wafer. Applicant's agent Patent attorney Takehiko Suzue
Claims (2)
より、その半導体基板の一主表面に存在する不純物を前
記純水中へ抽出することを特徴とする半導体基板表面の
不純物回収方法。(1) A method for recovering impurities on the surface of a semiconductor substrate, which comprises bringing one main surface of the semiconductor substrate into contact with pure water to extract impurities present on one main surface of the semiconductor substrate into the pure water.
セットとからなり、前記抽出容器とカセットとを組み合
わせることにより前記基板保持部が前記水槽へ挿入され
ることを特徴とする半導体基板表面の不純物回収装置。(2) A semiconductor substrate surface processing method comprising an extraction container having a water tank and a cassette having a substrate holding part, and the substrate holding part being inserted into the water tank by combining the extraction container and the cassette. Impurity recovery equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP867189A JPH02191327A (en) | 1989-01-19 | 1989-01-19 | Method and apparatus for collecting impurity on semiconductor substrate surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP867189A JPH02191327A (en) | 1989-01-19 | 1989-01-19 | Method and apparatus for collecting impurity on semiconductor substrate surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02191327A true JPH02191327A (en) | 1990-07-27 |
Family
ID=11699397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP867189A Pending JPH02191327A (en) | 1989-01-19 | 1989-01-19 | Method and apparatus for collecting impurity on semiconductor substrate surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02191327A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100508713B1 (en) * | 2002-12-10 | 2005-08-17 | 주식회사 실트론 | A method for ion analysis of silicon surface |
-
1989
- 1989-01-19 JP JP867189A patent/JPH02191327A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100508713B1 (en) * | 2002-12-10 | 2005-08-17 | 주식회사 실트론 | A method for ion analysis of silicon surface |
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