JPH02188922A - Electronic device and manufacture thereof - Google Patents
Electronic device and manufacture thereofInfo
- Publication number
- JPH02188922A JPH02188922A JP602989A JP602989A JPH02188922A JP H02188922 A JPH02188922 A JP H02188922A JP 602989 A JP602989 A JP 602989A JP 602989 A JP602989 A JP 602989A JP H02188922 A JPH02188922 A JP H02188922A
- Authority
- JP
- Japan
- Prior art keywords
- tiw
- alloy
- film
- tin
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims 4
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 28
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 20
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000012212 insulator Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 3
- 229910052742 iron Inorganic materials 0.000 claims abstract description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 3
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 3
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 3
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 3
- 229910052684 Cerium Inorganic materials 0.000 claims abstract 2
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 238000013508 migration Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 2
- 230000005012 migration Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000968 intestinal effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、エレクトロニクス装置、特に、Ｓｉ半導体、
Ｇａ−Ａｓ半導体、各種ヤンサ、感熱ヘッド基板、液晶
、及び１発光素子の高信頼配線電極膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to electronic devices, particularly Si semiconductors,
The present invention relates to highly reliable wiring electrode films for Ga-As semiconductors, various types of sensors, thermal head substrates, liquid crystals, and one light emitting device.
従来、集積回路装置の配線でＣｕ添加のＡｌが。 Conventionally, Cu-doped Al was used in the wiring of integrated circuit devices.
例えば、米国特許第３７２５３０９号に記載のように、
エレクトロマイグレーション、即ち、電気移動に起因す
る配線の断線不良を回避するために用いられてきた。For example, as described in U.S. Pat. No. 3,725,309,
It has been used to avoid wire breakage caused by electromigration, that is, electrical migration.
現在、Ａｌ配線構造が多層になり複雑になっているため
、Ａｌ配線膜を引張応力がかかり断線してしまう、いわ
ゆる、ストレスマイグレーションによる不良も問題にな
っている。このエレクトロマイグレーション、および、
ストレスマイグレーションによる断線を防止するため、
特開昭６３−２９５４８号公報ではＡｌとＴｉＷ乃至Ｔ
ｉＮを積層した配線を考案している。ところがこの構造
ではＡｌ２とＴｉＷ乃至Ｔ ｉ Ｎとの密着力が低く、
Ａｌ１１層がエレクトロニクスマイグレーションによっ
て移動して配線抵抗が高くなるため、導通不良となった
り、Ａｌが消失した部分では抵抗の高いＴｉＷ、乃至、
ＴｉＮ０層を電流が流れるため、ジュール発熱による断
線が起こるという欠点がある。At present, since Al wiring structures have become multi-layered and complicated, failures due to so-called stress migration, in which the Al wiring film is subjected to tensile stress and breaks, have also become a problem. This electromigration, and
To prevent wire breakage due to stress migration,
In Japanese Patent Application Laid-Open No. 63-29548, Al and TiW to T
We are devising a wiring layered with iN. However, in this structure, the adhesion between Al2 and TiW or TiN is low;
The Al11 layer moves due to electronics migration and the wiring resistance increases, resulting in poor conductivity and in the areas where Al disappears, TiW, which has high resistance, or
Since current flows through the TiN0 layer, there is a drawback that wire breakage occurs due to Joule heat generation.
上記従来技術は、ＡｌとＴｉＷ、乃至、ＴｉＮを積層さ
せることによって配線膜の耐ストレスマイグレーション
性を改善するものであるが、ＡｌとＴｉＷ乃至ＴｉＮと
の接着性について考慮がなされておらず、耐エレクトロ
ニクスマイグレーション性は必ずしも改善されないとい
う問題があった。The above-mentioned conventional technology improves the stress migration resistance of the wiring film by laminating Al and TiW or TiN, but it does not take into account the adhesion between Al and TiW or TiN, and the resistance There was a problem in that electronics migration performance was not necessarily improved.
本発明の目的は、配線膜の耐ストレスマイグレーション
性、及び、耐エレクトロマイグレーション性ともに優れ
た配線材料を提供することにある。An object of the present invention is to provide a wiring material that has excellent stress migration resistance and electromigration resistance of a wiring film.
（課題を解決するための手段〕
上記目的は、Ａｌ合金膜とＴｉＷ、乃至、ＴｉＮ膜との
接着性を改善することにより、達成される。(Means for Solving the Problems) The above object is achieved by improving the adhesion between the Al alloy film and the TiW or TiN film.
そのため、ＴｉＷ乃至ＴｉＮ膜上にＭｇ、又は、Ｂｅ１
Ｉを形成し、その上にＡｌ合金膜を形成する。Therefore, Mg or Be1
I is formed, and an Al alloy film is formed thereon.
Ｍｇ、あるいは、Ｂｅ膜がＴｉＷ乃至Ｔ ｉ Ｎ膜の表
面に強固に接着し、その上に形成するＡｌ合金膜とも反
応して下地のＴｉＷ乃至’１” ｉ ＮとＡｌ合金膜と
が接合される。The Mg or Be film firmly adheres to the surface of the TiW to TiN film, and also reacts with the Al alloy film formed on it, bonding the underlying TiW to '1'' iN and Al alloy film. Ru.
同様の効果を得るため、ＡｌターゲットにあらかじめＭ
ｇ又はＢｅを添加しておき、ＴｉＷ乃至Ｔ ｉ ＮとＡ
ｌとの界面の部分を形成する際、スイッチングスパッタ
法によって、原子層レベルの厚さでＭｇ、又は、Ｂｅ入
りＡｌ合金とＴｉＷ、乃至、Ｔ ｉ Ｎとを交互に積重
ねる方法があげられる。In order to obtain a similar effect, M
By adding g or Be, TiW to T i N and A
When forming the interface with L, a method of alternately stacking Mg or Be-containing Al alloy and TiW or TiN to a thickness on the atomic layer level by a switching sputtering method is mentioned.
また、ＴｉＷ乃至ＴｉＮにＭｇ又はＢｅを添加したター
ゲットを用いてもよい。Alternatively, a target obtained by adding Mg or Be to TiW or TiN may be used.
Ａｌ合金とＴｉＷ乃至ＴｉＮとの間に形成したＭｇ又は
Ｂｅと酸素との親和力はＡｌの場合よりも大きい。そこ
で、ＴｉＷ表面に形成される酸化膜とＭｇ、又は、Ｂｅ
が反応して酸化物となり、熱処理によってＡｌ中に拡散
するため強固なＡｌ合金とＴｉＷ乃至ＴｉＮとの金属接
合が得られる。The affinity between Mg or Be formed between the Al alloy and TiW to TiN and oxygen is greater than that in the case of Al. Therefore, the oxide film formed on the TiW surface and Mg or Be
reacts to become an oxide, which diffuses into Al through heat treatment, resulting in a strong metal bond between the Al alloy and TiW to TiN.
また、Ｍｇ又はＢｅはＡｆ１以上に酸素と結合しやすい
ので、あらかじめＡｌ、又は、ＴｉＷ乃至ＴｉＮ中に添
加しておいても、界面清浄化作用があり１強力なＡＩ２
合金とＴ ｉ Ｗ乃至ＴｉＮとの金属接合が得られる。In addition, Mg or Be is more likely to bond with oxygen than Af1, so even if it is added to Al or TiW or TiN in advance, it has an interface cleaning effect and is a strong AI2.
A metallic bond between the alloy and T i W to TiN is obtained.
−度、金属接合するとＡ、 Ｑ合金とＴ ｉ Ｗ乃至Ｔ
ｉＮ膜は一体となり、Ａｌだけがエレクトロマイグレー
ションによって移動することもなく、高電流密度の条件
に耐える高信頼配線が得られる。- degree, when metal bonded, A, Q alloy and T i W to T
The iN film is integrated, and only Al does not move due to electromigration, resulting in highly reliable wiring that can withstand high current density conditions.
〔実施例〕
以下、本発明を実施例によって説明する。第１図は本発
明の実施例の構造を示した断面図である。[Example] Hereinafter, the present invention will be explained with reference to Examples. FIG. 1 is a sectional view showing the structure of an embodiment of the present invention.
１は半導体基板（Ｓｉ、Ｇａ−Ａｓ基板）、２はコンタ
クトホール、３は絶縁物（例えばＳｉＯ２膜）、４はＡ
ｌにＰｄ、Ｐｔ、Ｓｉ、Ｌｉ、Ｂｅ。1 is a semiconductor substrate (Si, Ga-As substrate), 2 is a contact hole, 3 is an insulator (e.g. SiO2 film), 4 is A
Pd, Pt, Si, Li, Be.
Ｍｇ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｌａ。Mg, Mn, Fe, Co, Ni, Cu, La.
Ｃｅを各々５ｗｔ％未満添加したＡｌ合金配線、５はＴ
ｉＷ（Ｔｉを５〜９５重景％を含み）乃至ＴｉＮ膜、６
はＭｇ又はＢｅ層である。Al alloy wiring with less than 5 wt% of Ce added, 5 is T
iW (containing 5-95% Ti) to TiN film, 6
is a Mg or Be layer.
第２図は本発明の詳細な説明するためのグラフである。FIG. 2 is a graph for explaining the present invention in detail.
従来のＡｌ−５ｉ単層膜（０，４μｍ）、Ａｌ−８ｉ
（０，４μｍ）／ＴｉＷ （０，２ｐｍ）、Ａｌ−８ｉ
（０，４，ｕｍ）／Ｍｇ″（０，０１μｍ）／Ｔｉ
Ｗ（０，２μｍ）の三種類の配線を用いて高温通電試験
（２００℃、 ５ Ｘ １０６Ａ／ａｍ”）を行い配線
寿命を評価した結果を示している。Ａｌ−８ｉ単層膜に
比べてＡ Ｑ −Ｓ ｉ ／ Ｔ ｉ Ｗ積層膜の寿命
は短くなっている。一方、Ａ Ｑ −Ｓ ｉ ／ Ｍ
ｇ／ Ｔ ｉ Ｗの寿命はＡｌ−８ｉの十倍となってお
り。Conventional Al-5i single layer film (0.4 μm), Al-8i
(0.4μm)/TiW (0.2pm), Al-8i
(0,4,um)/Mg″(0,01μm)/Ti
The results show the results of a high-temperature current test (200°C, 5 x 106 A/am) using three types of W (0.2 μm) wires to evaluate the wire life. The lifetime of AQ-S i /T i W stacked film is getting shorter.On the other hand, AQ-S i /M
The lifespan of g/TiW is ten times that of Al-8i.
本発明によって配線の高信頼化が可能となった。The present invention has made it possible to increase the reliability of wiring.
Ａｌ合金／ Ｔ ｉ Ｗ積層配線はＡｌ合合金層配線に
比べて高温放置断線による不良がきわめて少ない。Compared to Al alloy layer wiring, Al alloy/T i W laminated wiring has extremely fewer defects due to disconnection when left at high temperatures.
それに比べて通電試験を行うと、却って、Ａｌ合金が動
き易くなり寿命が短くなるのはＴｉＷ上をＡｆ１合金が
スリップして移動するからだと考えられる。一方、絶縁
膜とＡｌ合金は密着性が高いため配線は動かない。そこ
でＡｆｌよりも酸素との親和力の強いＭｇ、又は、Ｂｅ
をＡｌ合金とＴｉＷの間にはさんでＡｌ合金とＴｉＷを
接合させ、ＡΩ合金のスリップを防止する。この方法に
より、Ａｌ単層膜のように多少Ａｌにスリット状の欠陥
が入ってもＴｉＷがつながっているため、Ａｌ単層膜に
比べてＡΩ／ Ｍ ｇ ／ Ｔ ｉ Ｗの寿命は一桁以
上のびる。In contrast, when conducting a current test, the Al alloy moves more easily and the lifespan becomes shorter, which is thought to be due to the Af1 alloy slipping and moving on the TiW. On the other hand, since the insulating film and the Al alloy have high adhesion, the wiring does not move. Therefore, Mg or Be, which has a stronger affinity for oxygen than Afl,
is sandwiched between the Al alloy and TiW to bond the Al alloy and TiW to prevent the AΩ alloy from slipping. With this method, even if there are some slit-like defects in Al like in an Al single layer film, the TiW is connected, so the lifespan of AΩ/Mg/TiW is one order of magnitude longer than that of an Al single layer film. Grow.
第３図はＡｌ０．４μｍ、ＴｉＷｏ、２７ｚｍでＡ
Ｑ ／ＴｉＷ、 Ａｌ−Ｍｇ／Ｔｉｅ、 ＡＭ／Ｔ
ｉリ−Ｍｇ、Ａｌ単層の四種類の配線の通電による寿命
を示している。Ａ ｆｉｌ ／ Ｔ ｉ Ｗの寿命が最
も低くＡ Ｑ −Ｍ ｇ ／ Ｔ ｉ ＷとＡ Ｑ ／
Ｔ ｉ Ｗ −Ｍ ｇ配線はＡｌ単層の五〜十倍の寿
命がある。これはＭｇがＡｌとＴｉＷ界面に拡散してゆ
き、界面にある酸化皮膜を破壊してＡｌとＴｉＷとの接
合を促進するためのものである。Figure 3 shows A with Al 0.4μm, TiWo, 27zm.
Q/TiW, Al-Mg/Tie, AM/T
It shows the lifespan of four types of wiring, i.e. Mg and Al single layer, when energized. A fil / T i W has the lowest lifespan, A Q - M g / T i W and A Q /
TiW-Mg wiring has a lifespan five to ten times longer than that of an Al single layer. This is because Mg diffuses into the interface between Al and TiW, destroys the oxide film at the interface, and promotes bonding between Al and TiW.
本発明によれば、耐エレクトロマイグレーション性、耐
ストレスマイグレーション性ともに優れ、従来に比べ同
一温度、電流条件で百倍以上の寿命をもつ配線膜が得ら
れる。According to the present invention, it is possible to obtain a wiring film that has excellent electromigration resistance and stress migration resistance, and has a lifespan more than 100 times longer under the same temperature and current conditions than conventional wiring films.
第１図は本発明の一実施例の構造の断面図、第２図及び
第３図は本発明の効果による耐エレクトロマイグレーシ
ョン性を示した図である。
１・・・半導体基板、２・・・コンタクトホール、３・
・・絶縁物、４・・・Ａｌ合金配線、５・・・ＴｉＷ、
又は、ＴｉＮ膜、６・Ｍｇ、又は、Ｂｅ。
第１図
第
因
試１旅呵間
（／−Ｌ）
第
図
書に□ 、ｊ疋将Ｒパ （ｈンFIG. 1 is a sectional view of a structure according to an embodiment of the present invention, and FIGS. 2 and 3 are diagrams showing electromigration resistance due to the effects of the present invention. 1... Semiconductor substrate, 2... Contact hole, 3.
...Insulator, 4...Al alloy wiring, 5...TiW,
Or TiN film, 6.Mg or Be. Figure 1 Intestinal 1 Journey (/-L) In the book □,
Claims (1)
トロニクス装置において、 前記配線膜をＡｌ合金とＴｉＷあるいはＴｉＮとの積層
膜で構成し、前記Ａｌ合金と前記ＴｉＷあるいは前記Ｔ
ｉＮとの界面にＭｇあるいはＢｅ膜を設けることを特徴
とするエレクトロニクス装置。 ２、半導体あるいは絶縁体基板上の配線膜のＡｌ合金は
、Ｐｄ、Ｐｔ、Ｓｉ、Ｌｉ、Ｂｅ、Ｍｇ、Ｍｎ、Ｆｅ、
Ｃｏ、Ｎｉ、Ｃｕ、Ｌａ、Ｃｅを各々５重量％未満含み
、残部がＡｌよりなることを特徴とするエレクトロニク
ス装置。 ３、半導体あるいは絶縁体基板上の配線膜のＴｉＷある
いはＴｉＮは、Ｍｇ、あるいは、Ｂｅを２０重量％未満
含むことを特徴とするエレクトロニクス装置。 ４、特許請求項第２項または第３項において、Ｍｇある
いはＢｅをＡｌ合金とＴｉＷ、あるいは、ＴｉＮとのど
ちらか一方、あるいは両方にあらかじめ添加しておくこ
とにより、Ａｌ合金とＴｉＷあるいはＴｉＮとを直接積
層して配線膜とすることを特徴とするエレクトロニクス
装置。 ５、特許請求項第１項、第２項、第３項または第４項に
おいて、 ＴｉＷあるいはＴｉＮ膜をスイッチングバイアススパッ
タ法で形成することを特徴とするエレクトロニクス装置
の製造方法。 ６、特許請求項第４項において、 Ａｌ合金とＴｉＷあるいはＴｉＮ膜との接合層をスイッ
チングスパッタ法で形成することを特徴とするエレクト
ロニクス装置の製造方法。 ７、特許請求項第４項において、 Ａｌ合金とＴｉＷあるいはＴｉＮ膜との接合層をスイッ
チングバイアススパッタ法で形成することを特徴とする
エレクトロニクス装置の製造方法。[Claims] 1. In an electronics device having a wiring film on a semiconductor or insulator substrate, the wiring film is composed of a laminated film of an Al alloy and TiW or TiN, and the wiring film is composed of a laminated film of an Al alloy and the TiW or the T
An electronics device characterized by providing an Mg or Be film at the interface with iN. 2. The Al alloy of the wiring film on the semiconductor or insulator substrate is Pd, Pt, Si, Li, Be, Mg, Mn, Fe,
An electronic device comprising less than 5% by weight of each of Co, Ni, Cu, La, and Ce, with the remainder being Al. 3. An electronics device characterized in that TiW or TiN of the wiring film on the semiconductor or insulator substrate contains less than 20% by weight of Mg or Be. 4. In claim 2 or 3, by adding Mg or Be to either or both of the Al alloy and TiW or TiN in advance, the Al alloy and TiW or TiN can be combined. An electronics device characterized by directly laminating a wiring film. 5. A method for manufacturing an electronics device according to claim 1, 2, 3, or 4, characterized in that the TiW or TiN film is formed by a switching bias sputtering method. 6. The method of manufacturing an electronics device according to claim 4, characterized in that the bonding layer between the Al alloy and the TiW or TiN film is formed by a switching sputtering method. 7. The method of manufacturing an electronic device according to claim 4, characterized in that the bonding layer between the Al alloy and the TiW or TiN film is formed by a switching bias sputtering method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP602989A JPH02188922A (en) | 1989-01-17 | 1989-01-17 | Electronic device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP602989A JPH02188922A (en) | 1989-01-17 | 1989-01-17 | Electronic device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02188922A true JPH02188922A (en) | 1990-07-25 |
Family
ID=11627241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP602989A Pending JPH02188922A (en) | 1989-01-17 | 1989-01-17 | Electronic device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02188922A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03148131A (en) * | 1989-10-25 | 1991-06-24 | American Teleph & Telegr Co <Att> | Semiconductor element and its manufacture |
| US6033542A (en) * | 1993-07-27 | 2000-03-07 | Kabushiki Kaisha Kobe Seiko Sho | Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices |
| US8992748B2 (en) | 2006-03-06 | 2015-03-31 | Tosoh Smd, Inc. | Sputtering target |
-
1989
- 1989-01-17 JP JP602989A patent/JPH02188922A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03148131A (en) * | 1989-10-25 | 1991-06-24 | American Teleph & Telegr Co <Att> | Semiconductor element and its manufacture |
| US6033542A (en) * | 1993-07-27 | 2000-03-07 | Kabushiki Kaisha Kobe Seiko Sho | Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices |
| USRE43590E1 (en) | 1993-07-27 | 2012-08-21 | Kobelco Research Institute, Inc. | Aluminum alloy electrode for semiconductor devices |
| USRE44239E1 (en) | 1993-07-27 | 2013-05-28 | Kobelco Research Institute, Inc. | Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices |
| US8992748B2 (en) | 2006-03-06 | 2015-03-31 | Tosoh Smd, Inc. | Sputtering target |
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