JPH0217626A - Reduction projection aligner - Google Patents

Reduction projection aligner

Info

Publication number
JPH0217626A
JPH0217626A JP63168472A JP16847288A JPH0217626A JP H0217626 A JPH0217626 A JP H0217626A JP 63168472 A JP63168472 A JP 63168472A JP 16847288 A JP16847288 A JP 16847288A JP H0217626 A JPH0217626 A JP H0217626A
Authority
JP
Japan
Prior art keywords
illuminance
uniformity
exposure area
reduction projection
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63168472A
Other languages
Japanese (ja)
Inventor
Hiroshi Kimura
広嗣 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63168472A priority Critical patent/JPH0217626A/en
Publication of JPH0217626A publication Critical patent/JPH0217626A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enable illuminace to be uniform easily and rapidly by measuring uniformity of illuminance within an exposure area, measuring illuminance of light radiated onto the surface of a sample and by automatically adjusting shift of an illumination optic system, performing calculation of a compensation value based on the measured value. CONSTITUTION:Light from a light source lamp 1 is reflected by a cold mirror 2 and is projected onto an XY stage 8 normally through a capacitor lens 3, a reflection mirror 4, a shutter 5 and a reduction projection lens 6. Then, uniformity of illuminance within the exposure area is measured by an illuminance meter 7 placed on an XY stage and the measurement result is sent to a compensation amount operation mechanism 11 where the compensation direction and compensation amount are calculated. And the obtained compensation amount is transmitted to each drive mechanism 9 and 10 of a lamp 1 and a mirror 2. Thus, illuminance irregularities within the exposure area are compensated for, uniformity within the exposure area is judged and recompensated for after compensation ends, and this operation is repeated until uniformity is within the standard.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は縮小投影露光装置に関し、特に半導体デバイス
を製造するのに用いて好適な縮小投影露光装置に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reduction projection exposure apparatus, and more particularly to a reduction projection exposure apparatus suitable for use in manufacturing semiconductor devices.

〔従来の技術〕[Conventional technology]

従来の縮小投影露光装置の一例を第3図を参照して説明
する。第3図はその構造模式図を示し、同図において、
1は光源ランプで、後述する三軸ステージ21に搭載さ
れている。2はとの光源ランプ1からの特定波長の光を
反射するためのコールドミラーであシ、このミラーは装
置外枠(図示せず)K固定されている。3はコンデンサ
レンズで、コールドミラー2で反射された光の照度ムラ
を補正する方向に働くようになされている。また、4は
反射ミラー、5はシャッター、6は縮小投影レンズ、7
は照度計で、XYステージ8上に搭載されておシ、この
照度計7は水平面内で移動可能になっている。
An example of a conventional reduction projection exposure apparatus will be explained with reference to FIG. FIG. 3 shows a schematic diagram of its structure, and in the same figure,
Reference numeral 1 denotes a light source lamp, which is mounted on a three-axis stage 21, which will be described later. 2 is a cold mirror for reflecting light of a specific wavelength from the light source lamp 1, and this mirror is fixed to an outer frame (not shown) K of the apparatus. 3 is a condenser lens, which is designed to work in the direction of correcting the unevenness of illuminance of the light reflected by the cold mirror 2. Also, 4 is a reflection mirror, 5 is a shutter, 6 is a reduction projection lens, 7
is an illumination meter mounted on an XY stage 8, and this illuminance meter 7 is movable within a horizontal plane.

第4図は第3図の三輪ステージ21の透視図で、光源ラ
ンプ1を搭載している。また、このステージ21の駆動
には各軸に対応した駆動調整ツマミ22x 、227及
び22mが使用されている。
FIG. 4 is a perspective view of the three-wheeled stage 21 shown in FIG. 3, on which the light source lamp 1 is mounted. Further, drive adjustment knobs 22x, 227, and 22m corresponding to each axis are used to drive the stage 21.

次に動作について説明する。第3図において、光源ラン
プ1を発した光はコールドミラー2で反射された後、コ
ンデンサレンズ3により照度ムラを軽減して、反射ミラ
ー4で反射され、シャッター5に照射される。露光する
際はこのシャッター5を開き、該シャッター5と縮小投
影レンズ6との間に配置された。パターンを描いたマス
ク(図示せず)IIを、縮小投影レンズ6を通じて、X
Yステージ8上に搭載された試料(図示せず)上に投影
する。このとき、照度ムラはコンデンサレンズ3で軽減
されるが、XYステージ8上では、露光領域内において
は照度ムラが起っている。そこで、XYステージ8上に
配置された照度計7を使って、露光領域内の照度ムラを
測定する。このとき、マスクは光軸上から除かれる。そ
して、測定値から判断して、第4図に示す三軸ゴニオメ
ータのステージ21を動かす方向を決めた後、各ツマミ
22X〜22冨を手動で回すことによシ、三軸ステージ
21を動かし、光源ランプlの光軸に対する位置を変化
させた後、再照度測定を行い、照度ムラが規格値以内に
6れば、調整を終了し露光を行い、規格外であれば、再
び三軸ステージ21の調整を行う。これを規格内におさ
まるように何度も繰シ返すのである。
Next, the operation will be explained. In FIG. 3, light emitted from a light source lamp 1 is reflected by a cold mirror 2, then reduced by a condenser lens 3 to reduce uneven illuminance, reflected by a reflection mirror 4, and irradiated onto a shutter 5. During exposure, the shutter 5 was opened and the lens was placed between the shutter 5 and the reduction projection lens 6. A patterned mask (not shown) II is passed through the reduction projection lens 6 and
The image is projected onto a sample (not shown) mounted on the Y stage 8. At this time, the illuminance unevenness is reduced by the condenser lens 3, but on the XY stage 8, illuminance unevenness occurs within the exposure area. Therefore, the illumination meter 7 placed on the XY stage 8 is used to measure the illuminance unevenness within the exposure area. At this time, the mask is removed from the optical axis. After determining the direction in which to move the stage 21 of the three-axis goniometer shown in FIG. 4 based on the measured values, the three-axis stage 21 is moved by manually turning each knob 22 After changing the position of the light source lamp l with respect to the optical axis, the illuminance is measured again. If the illuminance unevenness is within the standard value, the adjustment is completed and exposure is performed. If it is outside the standard, the three-axis stage 21 is re-measured. Make adjustments. This process is repeated many times to ensure that it falls within the specifications.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし、従来の縮小投影露光装置は以上のように構成さ
れていたので、照度ムラを少くするためには測定を繰シ
返し行う必要があシ、調整に手間と時間がかがシ、また
正確な調整が難しいなどの問題点があった。
However, since conventional reduction projection exposure equipment was configured as described above, it was necessary to repeatedly measure in order to reduce unevenness in illuminance, and adjustments were time-consuming and labor-intensive. There were problems such as difficulty in making adjustments.

本発明は、上記のような問題点を解消するためになされ
たもので、容易にかつ速やかに正確な露光領域内におけ
る照度均一性が得られる縮小投影露光装置を得ることを
目的とする。
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a reduction projection exposure apparatus that can easily and quickly obtain accurate illuminance uniformity within an exposure area.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係る縮小投影露光装置は、露光領域内での照度
ムラを測定する照度計を有し、この測定値によシ光源ラ
ンプの光軸上の位置、及びコールドミラーの角度の最適
値を演算する演算手段と、その結果から光源ランプとコ
ールドミラーを駆動する駆動機構とを具備したものであ
る。
The reduction projection exposure apparatus according to the present invention has an illuminance meter that measures illuminance unevenness within the exposure area, and uses this measurement value to determine the optimum value of the position on the optical axis of the light source lamp and the angle of the cold mirror. The apparatus is equipped with a calculation means for calculation, and a drive mechanism for driving the light source lamp and the cold mirror based on the calculation results.

〔作用〕[Effect]

本発明における光源ランプ及びコールドミラーは、露光
領域内の照度ムラを、照度計で測定することによって得
られた測定値を演算手段で演算することにより、光源ラ
ンプ及びコールドミラーの駆動方向及び距離、あるいは
角度が算出され、これらランプ及びミラーに付随する駆
動機構によって駆動調整される。
The light source lamp and cold mirror according to the present invention calculate the driving direction and distance of the light source lamp and the cold mirror by calculating the measurement value obtained by measuring the illuminance unevenness in the exposure area with an illuminance meter using a calculation means. Alternatively, the angles are calculated and driven and adjusted by drive mechanisms associated with these lamps and mirrors.

〔実施例〕〔Example〕

以下、本発明を図面に示す実施例に基づいて詳細に説明
する。
Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.

第1図は本発明の一実施例による縮小投影露光装置の構
造模式図である。この実施例の縮小投影露光装置は、光
源ランプ1.コールドミラー2゜コンデンサレンズ39
反射ミラー4.シャッター5、縮小投影レンズ6、照度
計7及びXYステージ8を有し、シャッター5と縮小投
影レンズ6との間に配置されたパターンを描いたマスク
像を、縮小投影レンズ6を通してXYステージ8上に搭
載され喪試料(図示せず)上に縮小投影し露光するよう
に構成されている点は、第3図に示した従来例のものと
同様であるが、光源ランプ1が駆動機構を伴う三軸ステ
ージ9つtbランプ駆動機構9上に搭載され、また、コ
ールドミラー2が装置外枠に固定されず、ミラー駆動機
構10上に搭載されている。そして、本装置のブロック
図を第2図に示す如く、照度計7の測定結果を演算し、
その結果を光源ランプ1及びコールドミラー−2の駆動
機構9.10へそれぞれ送る補正量演算機構11を具備
している。ただし、第2図において、Llは光源ランプ
1の光、L11L!は各コールドミラー2及び縮小投影
光学系6の光、DIは照度計7よシ出力する測定データ
を示し、また、DIは補正量演算機構11によって算出
された補正値、Fl及びF意は各駆動機構9,100ラ
ンプ及びミラー駆動力をそれぞれ示す。なお、図中、同
一符号は同一または相当部分を示している。
FIG. 1 is a schematic structural diagram of a reduction projection exposure apparatus according to an embodiment of the present invention. The reduction projection exposure apparatus of this embodiment includes a light source lamp 1. Cold mirror 2° condenser lens 39
Reflection mirror 4. It has a shutter 5, a reduction projection lens 6, an illumination meter 7, and an XY stage 8, and a mask image depicting a pattern placed between the shutter 5 and the reduction projection lens 6 is passed through the reduction projection lens 6 onto the XY stage 8. The structure is similar to that of the conventional example shown in FIG. 3 in that it is mounted on a light source and is configured to reduce and project light onto a specimen (not shown), but the light source lamp 1 is equipped with a driving mechanism. Nine three-axis stages are mounted on a tb lamp drive mechanism 9, and a cold mirror 2 is not fixed to the outer frame of the device but is mounted on a mirror drive mechanism 10. Then, as shown in the block diagram of this device in FIG. 2, the measurement results of the illumination meter 7 are calculated,
A correction amount calculation mechanism 11 is provided which sends the results to drive mechanisms 9 and 10 for the light source lamp 1 and the cold mirror 2, respectively. However, in FIG. 2, Ll is the light from light source lamp 1, L11L! indicates the light from each cold mirror 2 and the reduction projection optical system 6, DI indicates the measurement data output from the illumination meter 7, DI indicates the correction value calculated by the correction amount calculation mechanism 11, and Fl and F indicate the respective values. Drive mechanisms 9 and 100 respectively show the lamp and mirror driving forces. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.

次に上記実施例構成の動作を説明する。ここで、光源ラ
ンプ1を発した光は、コールドミラー2によシ反射され
、コンデンサレンズ3.反射ミ2−4、シャッター5.
縮小投影レンズ6を通J)、XYステージ8上に投影さ
れる構造は従来と同様であシ、露光領域内の照度の均一
性を測定しXYステージ8上の照度計7で行うが、本発
明では、この測定値D!つまシ測定結果り、を、第2図
に示すように、補正量演算機構11へ送り、ζこで上記
測定結果D!よシ、光源ランプ1及びコールドミラー2
を露光領域内での照度均一性を得るための光軸中におけ
る最適位置及び最適角度とに調整するための補正方向、
補正量を演算し、この演算結果を補正量Dsとして光源
ランプ1及びコールドミラー2の各々の駆動機構9.1
0へ伝達する。
Next, the operation of the configuration of the above embodiment will be explained. Here, the light emitted from the light source lamp 1 is reflected by the cold mirror 2, and is reflected by the condenser lens 3. Reflection Mi 2-4, Shutter 5.
The structure of projecting the image onto the XY stage 8 through the reduction projection lens 6 is the same as the conventional one, and the uniformity of illuminance within the exposure area is measured using the illumination meter 7 on the XY stage 8. In the invention, this measured value D! The measurement results D! are sent to the correction amount calculation mechanism 11 as shown in FIG. 2, where the measurement results D! Okay, light source lamp 1 and cold mirror 2
a correction direction for adjusting to the optimum position and angle in the optical axis for obtaining illuminance uniformity within the exposure area;
A correction amount is calculated, and the calculation result is used as the correction amount Ds to drive each drive mechanism 9.1 of the light source lamp 1 and the cold mirror 2.
Transmit to 0.

これKより、各ランプ及びミラー駆動機構9,10は、
この補正値り、をもとに光源ランプ1.コールドミラー
2を駆動し、露光領域内の照度ムラを補正する。この補
正終了後、再び露光領域内の照度均一性を測定し、この
測定結果D1を演算機構11で判定したうえ、規格外の
値の場合は再補正を実施する。そして、これを、照度均
一性が規格内におさまるまでく夛返すことになる。
From this K, each lamp and mirror drive mechanism 9, 10 is
Based on this correction value, light source lamp 1. The cold mirror 2 is driven to correct illuminance unevenness within the exposure area. After this correction is completed, the illuminance uniformity within the exposure area is measured again, this measurement result D1 is judged by the calculation mechanism 11, and if the value is outside the standard, re-correction is performed. This process is repeated until the illuminance uniformity falls within the standard.

なお、上記実施例では、照度測定はXYステージ上の照
度計によって計測していたが、照度計をシャッターの前
に配置し、露光領域の照度均一性が最適の際におけるシ
ャッター前における光強度の分布状態を計測、記録して
おくことKよシ、シャッターを閉じたままで、また、マ
スクを光軸上に配置したままで照度の調整が可能となる
ようにしてもよい。
In the above embodiment, the illuminance was measured using an illuminance meter on the XY stage, but the illuminance meter was placed in front of the shutter, and the light intensity in front of the shutter was measured when the illuminance uniformity of the exposure area was optimal. In addition to measuring and recording the distribution state, the illuminance may be adjusted while the shutter remains closed or the mask is placed on the optical axis.

〔発明の効果〕〔Effect of the invention〕

以−ヒのように、本発明の縮小投影露光装置によれば、
試料面上に照射される光の照度を計測し露光領域内での
照度の均一性を測定μこの測定値にもとづいて照度ムラ
を補正するための照明光学系の補正値を算出する演算手
段と、その補正値にもとづき照明光学系の移動調整を自
動で行うための調整機構とを具備することにより、露光
領域内の照度均一性を容易にかつ速やかに、また正確に
調整できるので、装置の調整に要する時間の短縮が可能
に々る。また、ショット内に訃ける露光エネルギーの均
一性が高くなることにより、露光エネルギーに依存して
いるマスクパターンの寸法制御性の改、Sをはかること
ができる効果がある。
As shown below, according to the reduction projection exposure apparatus of the present invention,
Calculating means for measuring the illuminance of the light irradiated onto the sample surface and measuring the uniformity of the illuminance within the exposure area µ Based on this measured value, calculating a correction value for the illumination optical system for correcting illuminance unevenness; By having an adjustment mechanism that automatically adjusts the movement of the illumination optical system based on the correction value, the uniformity of illuminance within the exposure area can be adjusted easily, quickly, and accurately. It is possible to shorten the time required for adjustment. Further, by increasing the uniformity of the exposure energy within a shot, it is possible to improve the dimensional controllability of the mask pattern, which depends on the exposure energy.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す縮小投影露光装置の構
造模式図、第2図は本発明の一実施例における動作のブ
ロック図、第3図は従来の縮小投影露光装置の露光領域
照度均一性測定系の構造模式図、第4図は第3図におけ
る三軸ステージの透視図である。 1・・・・光源ランプ、2・・・・コールドミラー 3
・・・・コンデンサレンズ、4・・・書反射ミラー、5
・・・・シャッター、6・・・・縮小投影レンズ、7・
・・・照度計、8・・・・XYステージ、9・・・・ラ
ンプ駆動機構、10・・・・ミラー駆動機構、11・・
・・補正量演算機構。 第1図
Fig. 1 is a schematic structural diagram of a reduction projection exposure apparatus showing an embodiment of the present invention, Fig. 2 is a block diagram of the operation in an embodiment of the invention, and Fig. 3 is an exposure area of a conventional reduction projection exposure apparatus. FIG. 4 is a schematic structural diagram of the illuminance uniformity measuring system, and is a perspective view of the three-axis stage in FIG. 3. 1...Light source lamp, 2...Cold mirror 3
... Condenser lens, 4... Book reflection mirror, 5
... Shutter, 6 ... Reduction projection lens, 7.
... illuminance meter, 8 ... XY stage, 9 ... lamp drive mechanism, 10 ... mirror drive mechanism, 11 ...
...Correction amount calculation mechanism. Figure 1

Claims (1)

【特許請求の範囲】[Claims] 光を照射することにより、マスクに描かれた図形である
マスクパターンをレンズを通して試料上に縮小投影し露
光する縮小投影露光装置において、試料面上に照射され
る光の照度を計測し露光領域内での照度の均一性を測定
し、この測定値にもとづいて照度ムラを補正するための
照明光学系の補正値を算出する演算手段と、その補正値
にもとづき照明光学系の移動調整を自動で行うための調
整機構とを備えたことを特徴とする縮小投影露光装置。
In a reduction projection exposure device that reduces and projects a mask pattern, which is a figure drawn on a mask, onto a sample through a lens and exposes it by irradiating light, the illuminance of the light irradiated onto the sample surface is measured and the image is measured within the exposure area. Calculation means that measures the uniformity of illuminance at a location, calculates a correction value for the illumination optical system to correct uneven illuminance based on this measurement value, and automatically adjusts the movement of the illumination optical system based on the correction value. What is claimed is: 1. A reduction projection exposure apparatus, comprising: an adjustment mechanism for adjusting the projection exposure;
JP63168472A 1988-07-05 1988-07-05 Reduction projection aligner Pending JPH0217626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63168472A JPH0217626A (en) 1988-07-05 1988-07-05 Reduction projection aligner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63168472A JPH0217626A (en) 1988-07-05 1988-07-05 Reduction projection aligner

Publications (1)

Publication Number Publication Date
JPH0217626A true JPH0217626A (en) 1990-01-22

Family

ID=15868739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63168472A Pending JPH0217626A (en) 1988-07-05 1988-07-05 Reduction projection aligner

Country Status (1)

Country Link
JP (1) JPH0217626A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07192995A (en) * 1993-12-27 1995-07-28 Nec Corp Aligner
SG94791A1 (en) * 2000-03-24 2003-03-18 Nikon Corp Illuminance measurement apparatus and exposure apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07192995A (en) * 1993-12-27 1995-07-28 Nec Corp Aligner
SG94791A1 (en) * 2000-03-24 2003-03-18 Nikon Corp Illuminance measurement apparatus and exposure apparatus

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