JPH0217484Y2 - - Google Patents
Info
- Publication number
- JPH0217484Y2 JPH0217484Y2 JP1984166736U JP16673684U JPH0217484Y2 JP H0217484 Y2 JPH0217484 Y2 JP H0217484Y2 JP 1984166736 U JP1984166736 U JP 1984166736U JP 16673684 U JP16673684 U JP 16673684U JP H0217484 Y2 JPH0217484 Y2 JP H0217484Y2
- Authority
- JP
- Japan
- Prior art keywords
- cap
- bottom plate
- glass
- lead
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011521 glass Substances 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 9
- 230000008018 melting Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
- H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/26175—Flow barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Description
【考案の詳細な説明】
産業上の利用分野
この考案はフラツトパツケージに関し、より詳
しくはパツケージ本体とキヤツプとを低融点ガラ
スを介してシールしてなり、特に例えば水晶振動
子に好適するものである。[Detailed description of the invention] Industrial application field This invention relates to a flat package, more specifically, a package body and a cap are sealed via a low melting point glass, and is particularly suitable for, for example, a crystal resonator. be.
従来の技術
半導体装置や水晶振動子等の電子部品におい
て、半導体素子や水晶片等の素子は、湿気等によ
つて特性変動を起こすため、パツケージングされ
ている。樹脂でパツケージングするものもある
が、信頼性の点でカンケースやセラミツクパツケ
ージに封入したものに比較して劣るので、高信頼
性を要求される用途には、カンケースやセラミツ
クパツケージが用いられている。ところがカンケ
ースやセラミツクパツケージを用いるものでは、
水分の浸入はないが、実公昭40−36187号公報に
開示されているように、半田を用いてシールする
と、フラツクスの蒸気によつて素子が劣化するた
め、ガラスでシールしたものが考えられている。BACKGROUND OF THE INVENTION In electronic components such as semiconductor devices and crystal resonators, semiconductor elements and elements such as crystal pieces are packaged because their characteristics change due to moisture or the like. Some products are packaged with resin, but in terms of reliability, they are inferior to those sealed in can cases or ceramic packages, so can cases or ceramic packages are used for applications that require high reliability. ing. However, with can cases and ceramic package cages,
Although moisture does not infiltrate, as disclosed in Japanese Utility Model Publication No. 1973-36187, if the device is sealed with solder, the flux vapor will deteriorate the device, so a device sealed with glass is considered. There is.
第３図は従来のガラスシール型セラミツクフラ
ツトパツケージの一例のキヤツプを除いた平面図
を示し、第４図は第３図の−線に対応する断
面図を示す。図において、１はパツケージ本体
で、アルミナ，ステアタイト等のセラミツクより
なる底板２と枠体３との間に、ガラス４を介して
コバール，42合金（Fe；58％，Ni；42％）等よ
りなる一対の板状のリード５，６を気密に封着し
たものである。７はアルミナ，ステアタイト等の
セラミツクよりなるキヤツプで、低融点ガラス８
を介して前記枠体３に気密に封着されている。図
中、二点鎖線９は水晶片等の素子で、導電性接着
剤等を介して、前記一対のリード５，６に跨つて
電気的および機械的に接続固着されている。 FIG. 3 shows a plan view of an example of a conventional glass-sealed ceramic flat package with the cap removed, and FIG. 4 shows a sectional view corresponding to the line -- in FIG. In the figure, reference numeral 1 is the package body, and a glass 4 is interposed between a bottom plate 2 made of ceramic such as alumina or steatite and a frame 3 such as Kovar, 42 alloy (Fe; 58%, Ni; 42%), etc. A pair of plate-shaped leads 5 and 6 are hermetically sealed. 7 is a cap made of ceramic such as alumina or steatite, and is made of low melting point glass 8
It is hermetically sealed to the frame 3 via. In the figure, a two-dot chain line 9 indicates an element such as a crystal piece, which is electrically and mechanically connected and fixed across the pair of leads 5 and 6 via a conductive adhesive or the like.
ところで、上記の構成においては、キヤツプ７
のシール用ガラスに、リード５，６を封着するガ
ラス４より融点の低い低融点ガラス８を使用して
はいるが、低融点ガラス８の溶融のために、全体
を抵抗式加熱炉等で加熱するため、素子９が高温
になつて特性劣化を起こしたり、素子９を有機物
質を含む導電性接着剤を用いて接続固着している
場合は、導電性接着剤からガスを発生して、素子
９の特性劣化の原因になつていた。 By the way, in the above configuration, the cap 7
As the sealing glass, a low melting point glass 8 whose melting point is lower than that of the glass 4 used to seal the leads 5 and 6 is used. Due to the heating, the element 9 may reach a high temperature and cause characteristic deterioration, or if the element 9 is connected and fixed using a conductive adhesive containing an organic substance, the conductive adhesive may generate gas. This was a cause of deterioration of the characteristics of the element 9.
そこで本件出願人は、別途キヤツプの下面の少
なくともパツケージ本体とのシール箇所に低融点
ガラスを被着しておき、前記キヤツプの上面にヒ
ータを押し当てて、キヤツプの伝導熱で低融点ガ
ラスを溶融させてパツケージ本体とキヤツプとを
シールする方法を提案している。 Therefore, the applicant separately adhered low-melting glass to at least the sealing area with the package body on the bottom surface of the cap, pressed a heater against the top surface of the cap, and melted the low-melting glass using the conductive heat of the cap. This paper proposes a method of sealing the package body and the cap.
第５図は上記キヤツプシール方法について説明
するためのシール前の分解断面図を示す。図にお
いて、次の点を除いては第４図と同一であるの
で、同一部分には同一参照符号を付して、その説
明を省略する。第４図との相違点は、パツケージ
本体１の底板２の下にベリリヤ，鉄，銅，アルミ
ニウム等の良熱伝導体よりなる放熱板１０を配置
したことと、キヤツプ７の上面にセラミツクヒー
タ等のヒータ１１を押圧していることである。 FIG. 5 shows an exploded sectional view before sealing to explain the cap sealing method described above. The figure is the same as FIG. 4 except for the following points, so the same parts are given the same reference numerals and their explanation will be omitted. The difference from FIG. 4 is that a heat sink 10 made of a good thermal conductor such as beryllium, iron, copper, or aluminum is placed under the bottom plate 2 of the package body 1, and a ceramic heater etc. is placed on the top surface of the cap 7. This means that the heater 11 is pressed.
上記の構成によれば、ヒータ１１からのキヤツ
プ７の伝導熱によつて、その下面に被着されてい
る低融点ガラス８が加熱溶融されて、キヤツプ７
がパツケージ本体１の枠体３に融着シールされ
る。このとき、枠体３およびガラス４の熱抵抗に
よつて、リード５，６の温度上昇が抑止され、し
かもリード５，６の熱はガラス４および底板２を
伝導して放熱板１０に放熱される。このため、リ
ード５，６の温度は低く抑えられ、素子９やこの
素子９をリード５，６に接続固着する接着剤の温
度は低く、素子９自身の高温による劣化がないの
みならず、導電性接着剤が有機物質を含むもので
あつても有害なガスを発生することがなく、素子
９が発生ガスによつて劣化することもない。 According to the above configuration, the low melting point glass 8 attached to the lower surface of the cap 7 is heated and melted by the conductive heat of the cap 7 from the heater 11.
is fused and sealed to the frame 3 of the package body 1. At this time, the temperature rise of the leads 5 and 6 is suppressed by the thermal resistance of the frame 3 and the glass 4, and the heat of the leads 5 and 6 is conducted through the glass 4 and the bottom plate 2 and radiated to the heat sink 10. Ru. Therefore, the temperature of the leads 5 and 6 is kept low, and the temperature of the element 9 and the adhesive that connects and fixes the element 9 to the leads 5 and 6 is low, and not only does the element 9 itself not deteriorate due to high temperature, but it also has a conductive Even if the adhesive contains an organic substance, no harmful gas is generated, and the element 9 is not deteriorated by the generated gas.
上記の製法を採用する場合、キヤツプ７はアル
ミナ等の熱伝導率の大きいセラミツクで形成し、
一方枠体３はフオルステライト等の熱伝導率の小
さいセラミツクで形成する方が望ましい。 When the above manufacturing method is adopted, the cap 7 is made of ceramic with high thermal conductivity such as alumina,
On the other hand, it is preferable that the frame 3 be formed of ceramic having low thermal conductivity, such as forsterite.
考案が解決しようとする問題点
ところが、上記のように、底板２と枠体３との
間に低融点ガラス４を介して平板状のリード５，
６を封着する構成のパツケージ本体１では、キヤ
ツプ７のシール時に、リード５，６の位置決めが
困難であるばかりでなく、素子９や導電性接着剤
等の温度上昇の抑制にも限度があつた。もし、こ
れらの温度上昇をさらに抑制できれば、素子９の
特性劣化をより確実に防止できるし、導電性接着
剤等の選択範囲も広くなる。Problems to be Solved by the Invention However, as described above, the flat leads 5,
In the package body 1 configured to seal the cap 7, it is not only difficult to position the leads 5 and 6 when sealing the cap 7, but also there is a limit to suppressing the temperature rise of the element 9, conductive adhesive, etc. Ta. If these temperature increases can be further suppressed, deterioration of the characteristics of the element 9 can be more reliably prevented and the selection range of conductive adhesives etc. can be expanded.
問題点を解決するための手段
この考案は、パツケージ本体の底板の一部に凹
部を形成するとともに、この凹部に対応してリー
ドに屈曲部を形成し、この屈曲部を前記凹部に熱
的に結合したことを特徴とする。Means for Solving the Problem This invention forms a recess in a part of the bottom plate of the package body, forms a bent part in the lead corresponding to the recess, and thermally connects the bent part to the recess. It is characterized by being combined.
作 用
上記の構成によれば、リードの一部がパツケー
ジ本体の底板の凹部に嵌合して位置決めされるの
で、リードの位置決めが容易かつ正確に行なえる
し、リードの一部が底板と熱的に結合されている
ので、キヤツプシール時のリードの熱は効率よく
底板に放散され、特に底板に凹部を形成して実質
的に薄くなつた底板箇所にリードを熱的に結合し
ているので、底板を介して放熱板に効率よく放熱
されるので、素子や導電性接着剤の温度上昇を防
止し、素子の特性劣化をより確実に防止でき、あ
るいは導電性接着剤の選択範囲が広くなる。Effects According to the above configuration, a part of the lead fits into the recess in the bottom plate of the package main body and is positioned, so the lead can be easily and accurately positioned, and a part of the lead is connected to the bottom plate and heated. Because the heat from the leads during cap sealing is efficiently dissipated to the bottom plate, the leads are thermally bonded to the bottom plate where the bottom plate has become substantially thinner by forming a recess in the bottom plate. , heat is efficiently dissipated to the heat dissipation plate via the bottom plate, which prevents the temperature of the element and conductive adhesive from rising, more reliably preventing deterioration of the element's characteristics, and widening the range of conductive adhesives to choose from. .
実施例
以下、この考案の一実施例のフラツトパツケー
ジについて、図面を参照して説明する。Embodiment Hereinafter, a flat package according to an embodiment of this invention will be described with reference to the drawings.
第１図はキヤツプを除いた平面図で、第２図は
第１図の−線に対応する断面図である。図に
おいて、次の点を除いては、第３図および第４図
と同様であるため、同一部分には同一参照符号を
付して、その説明を省略する。第３図および第４
図と相違する点は、パツケージ本体１２の構造に
ある。このパツケージ本体１２は、底板２の４ヶ
所に扇形の凹部２ａを形成し、この凹部２に対応
してリード５，６の一部に屈曲部５ａ，６ａを形
成し、この屈曲部５ａ，６ａを前記凹部２ａの底
部にガラスやシリコンゴム等の接着剤１３を介し
て熱的に結合したものである。 FIG. 1 is a plan view with the cap removed, and FIG. 2 is a sectional view taken along the - line in FIG. The figure is the same as FIGS. 3 and 4 except for the following points, so the same parts are given the same reference numerals and the explanation thereof will be omitted. Figures 3 and 4
The difference from the figure lies in the structure of the package body 12. This package main body 12 has fan-shaped recesses 2a formed at four locations on the bottom plate 2, and bent portions 5a, 6a formed in some of the leads 5, 6 corresponding to the recesses 2. is thermally bonded to the bottom of the recess 2a via an adhesive 13 such as glass or silicone rubber.
考案の効果
この考案によれば、底板の凹部にリードの屈曲
部を熱的に結合したことにより、リードの位置決
めが容易かつ正確に行なえ、しかもキヤツプシー
ル時にリードの熱を前記熱的結合部を通して底板
に放散できるので、素子や導電性接着剤の温度上
昇を従来よりも抑制でき、素子の特性劣化をより
確実に防止できる。あるいは従来よりも耐熱性の
低い導電性接着剤を採用することが可能になる。Effects of the invention According to this invention, by thermally bonding the bent portion of the lead to the concave portion of the bottom plate, the positioning of the lead can be performed easily and accurately.Moreover, when sealing the cap, the heat of the lead is passed through the thermal bonding portion. Since it can be dissipated to the bottom plate, the temperature rise of the element and conductive adhesive can be suppressed more than before, and deterioration of the characteristics of the element can be more reliably prevented. Alternatively, it becomes possible to use a conductive adhesive with lower heat resistance than conventional adhesives.
第１図はこの考案の一実施例のフラツトパツケ
ージのキヤツプを除いた平面図、第２図は第１図
の−線に対応する断面図である。第３図は従
来のフラツトパツケージのキヤツプを除いた平面
図で、第４図は第３図の−線に対応する断面
図である。第５図はキヤツプのシール方法につい
て説明するためのシール前の分解断面図である。
２……底板、２ａ……凹部、４……ガラス、
５，６……リード、５ａ，６ａ……屈曲部、７…
…キヤツプ、８……低融点ガラス。
FIG. 1 is a plan view of a flat package according to an embodiment of the invention with the cap removed, and FIG. 2 is a sectional view taken along the line -- in FIG. FIG. 3 is a plan view of a conventional flat package with the cap removed, and FIG. 4 is a sectional view taken along the - line in FIG. FIG. 5 is an exploded cross-sectional view before sealing for explaining the method of sealing the cap. 2...bottom plate, 2a...recess, 4...glass,
5, 6... Lead, 5a, 6a... Bent part, 7...
...Cap, 8...Low melting point glass.
Claims (1)
ージ本体とこのパツケージ本体に低融点ガラスを
介してシールされたキヤツプとで構成されたフラ
ツトパツケージにおいて、 前記パツケージ本体の底板に凹部を形成すると
ともに、この凹部に対応して前記リードに屈曲部
を形成し、この屈曲部を前記凹部に熱的に結合し
たことを特徴とするフラツトパツケージ。[Claims for Utility Model Registration] In a flat package consisting of a package body formed by sealing a lead through glass and a cap sealed to the package body through low-melting glass, the bottom plate of the package body includes: A flat package characterized in that a recess is formed in the lead, a bent part is formed in the lead corresponding to the recess, and the bent part is thermally coupled to the recess.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984166736U JPH0217484Y2 (en) | 1984-10-31 | 1984-10-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984166736U JPH0217484Y2 (en) | 1984-10-31 | 1984-10-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6181146U JPS6181146U (en) | 1986-05-29 |
| JPH0217484Y2 true JPH0217484Y2 (en) | 1990-05-16 |
Family
ID=30724545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984166736U Expired JPH0217484Y2 (en) | 1984-10-31 | 1984-10-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0217484Y2 (en) |
-
1984
- 1984-10-31 JP JP1984166736U patent/JPH0217484Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6181146U (en) | 1986-05-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0740600B2 (en) | Semiconductor device | |
| JPS59130449A (en) | Insulation type semiconductor element | |
| JPS61166051A (en) | Resin seal type semiconductor device | |
| JPH05226106A (en) | Film-type resistor | |
| JPH0217484Y2 (en) | ||
| JPH0217482Y2 (en) | ||
| JPH039334Y2 (en) | ||
| JP2006033413A (en) | Piezoelectric vibration device | |
| JP7075329B2 (en) | Piezoelectric device | |
| JPH0445291Y2 (en) | ||
| JPH0249727Y2 (en) | ||
| JPH04114455A (en) | Semiconductor device and mounting structure thereof | |
| JPH0349398Y2 (en) | ||
| JPH0416497Y2 (en) | ||
| JPH036028Y2 (en) | ||
| JP2828553B2 (en) | Semiconductor device | |
| JPH03182397A (en) | Ic card | |
| JPH0142354Y2 (en) | ||
| JPS5810840A (en) | Semiconductor device | |
| JPH0249726Y2 (en) | ||
| JPS61108159A (en) | Flat package | |
| JPS63169749A (en) | Semiconductor device | |
| JPS6155945A (en) | Sealing method of cap for flat package | |
| JP2870501B2 (en) | Semiconductor device | |
| JP3460631B2 (en) | High frequency semiconductor device |