JPH02170473A - Amorphous solar cell - Google Patents
Amorphous solar cellInfo
- Publication number
- JPH02170473A JPH02170473A JP63324287A JP32428788A JPH02170473A JP H02170473 A JPH02170473 A JP H02170473A JP 63324287 A JP63324287 A JP 63324287A JP 32428788 A JP32428788 A JP 32428788A JP H02170473 A JPH02170473 A JP H02170473A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- coupling agent
- silane coupling
- film electrode
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 32
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 12
- 239000011230 binding agent Substances 0.000 claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 7
- 125000000524 functional group Chemical group 0.000 abstract description 2
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 2
- 239000011147 inorganic material Substances 0.000 abstract description 2
- 239000007822 coupling agent Substances 0.000 abstract 1
- 230000003301 hydrolyzing effect Effects 0.000 abstract 1
- 239000011368 organic material Substances 0.000 abstract 1
- 238000004321 preservation Methods 0.000 abstract 1
- 238000006467 substitution reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000009835 boiling Methods 0.000 description 7
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000005011 phenolic resin Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 2
- 235000019445 benzyl alcohol Nutrition 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- GNUALYPKLFQNJG-UHFFFAOYSA-N heptan-4-yloxy(dimethoxy)silane Chemical compound C(CC)C(O[SiH](OC)OC)CCC GNUALYPKLFQNJG-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、非晶質太陽電池、特に、非晶質シリコン膜か
らなる電池ユニ・ノドの透過光面側に厚膜電極を形成し
てなる非晶質太陽電池に関する。[Detailed Description of the Invention] (Industrial Application Field) The present invention is directed to forming a thick film electrode on the light-transmitting surface side of an amorphous solar cell, particularly a battery unit made of an amorphous silicon film. The present invention relates to an amorphous solar cell.
(従来の技術)
一般に、非晶質太陽電池は、第3図に示すように、ガラ
ス等の絶縁性透明基板(1)上にITO膜等の透明電極
(2)を形成し、その上に非晶質のp形シリコン膜(3
)、i形シリコン膜(4)およびn形シリコンrfA(
5)を順次積層し、その透過光面(7)側のシリコン膜
上に背面電極(6)を形成した構造を有し、その背面電
極としては、真空蒸着やスパッタリングにより形成され
たアルミニウム等の良導電性金属からなる薄膜電極が採
用されているが、薄膜形成装置は高価であり、しかも面
積生産性が低いという問題があった。このため、例えば
、特開昭61−199673号公報に記載のように、背
面電極としてバインダ樹脂溶液にニッケル粉末を分散さ
せてなる導電ペーストで形成した厚膜電極を使用するこ
とが提案されている。(Prior art) Generally, an amorphous solar cell is made by forming a transparent electrode (2) such as an ITO film on an insulating transparent substrate (1) such as glass, as shown in FIG. Amorphous p-type silicon film (3
), i-type silicon film (4) and n-type silicon rfA (
5) are sequentially stacked, and a back electrode (6) is formed on the silicon film on the side of the transparent light surface (7), and the back electrode is made of aluminum or the like formed by vacuum deposition or sputtering. Thin film electrodes made of highly conductive metals have been used, but there have been problems in that the thin film forming apparatus is expensive and the area productivity is low. For this reason, for example, as described in JP-A-61-199673, it has been proposed to use a thick film electrode formed from a conductive paste made by dispersing nickel powder in a binder resin solution as a back electrode. .
(発明が解決しようとする課題)
この種の厚膜電極は、印刷法やスプレー法により安価に
形成でき、生産性に優れているが、非晶質シリコン膜と
の機械的密着強度が極めて弱く、保存特性面での信頼性
に乏しいという問題がある。(Problem to be solved by the invention) This type of thick film electrode can be formed inexpensively by printing or spraying methods and has excellent productivity, but the mechanical adhesion strength with the amorphous silicon film is extremely weak. However, there is a problem of poor reliability in terms of storage characteristics.
例えば、導電ペーストで形成された厚膜電極を有する非
晶質太陽電池を100℃で4時間煮沸する煮沸試験等の
保存特性試験にかけると、厚膜電極と非晶質シリコン膜
との密着性が一段と低下し、しかも、それに伴ってオー
ミック特性も著しく劣化するという問題がある。For example, when an amorphous solar cell with a thick film electrode made of conductive paste is subjected to a storage property test such as a boiling test in which it is boiled at 100°C for 4 hours, it is found that the adhesion between the thick film electrode and the amorphous silicon film is There is a problem in that the ohmic characteristics are further deteriorated and the ohmic characteristics are also significantly deteriorated.
従って、本発明は、安価で生産性に優れているという厚
膜電極の利点を生かしつつ、厚膜電極と非晶質シリコン
膜との密着性を向上させ、かつ、保存特性面での信頼性
を向上させた非晶質太陽電池を得ること目的とするもの
である。Therefore, the present invention improves the adhesion between the thick film electrode and the amorphous silicon film while taking advantage of the advantages of the thick film electrode that it is inexpensive and has excellent productivity. The purpose is to obtain an amorphous solar cell with improved properties.
(課題を解決するための手段)
本発明は、前記課題を解決するための手段として、少な
くとも厚膜電極と太陽電池ユニットの透過光面側シリコ
ン膜との境界面にシランカップリング剤を介在させるよ
うにしたものである。(Means for Solving the Problems) As a means for solving the above problems, the present invention provides that a silane coupling agent is interposed at least at the interface between the thick film electrode and the silicon film on the transparent side of the solar cell unit. This is how it was done.
即ち、本発明は、導電性材料粉末をバインダ樹脂中に分
散させてなる厚膜電極を太陽電池ユニットの透過光面に
形成してなる非晶質太陽電池において、少なくとも前記
透過光面と厚膜電極との境界面にシランカップリング剤
を介在させてなることを特徴とする非晶質太陽電池をそ
の要旨とするものである。That is, the present invention provides an amorphous solar cell in which a thick film electrode formed by dispersing conductive material powder in a binder resin is formed on a light transmitting surface of a solar cell unit. The gist of this invention is an amorphous solar cell characterized by having a silane coupling agent interposed at the interface with an electrode.
前記シランカップリング剤を少なくとも太陽電池ユニッ
トの透過光面と背面電極との間に介在させる手段として
は、導電性材料粉末とバインダ樹脂溶液とからなるペー
ストに、その固形分に対して0.2〜3.Of!ffi
%のシランカップリング剤を添加して分散させた導電ペ
ーストを用いて厚膜電極を形成する方法を採用すれば良
いが、必ずしもこれに限定されるものではない。As a means for interposing the silane coupling agent between at least the light-transmitting surface and the back electrode of the solar cell unit, the silane coupling agent is added to a paste consisting of conductive material powder and a binder resin solution in an amount of 0.2% based on the solid content thereof. ~3. Of! ffi
% of a silane coupling agent and dispersed therein may be adopted, but the method is not necessarily limited to this method.
例えば、シランカップリング剤をイソプロピルアルコー
ル等の有機溶剤に分散させ、これを太陽電池ユニットの
透過光面に塗布、乾燥させてシランカップリング剤の薄
膜を形成し、その上に導電性材料をバインダ樹脂に分散
させてなる導電ペーストで背面電極を形成する方法を採
用しても良い。For example, a silane coupling agent is dispersed in an organic solvent such as isopropyl alcohol, applied to the light-transmitting surface of a solar cell unit, dried to form a thin film of the silane coupling agent, and then a conductive material is applied as a binder on top of the thin film of the silane coupling agent. A method may also be adopted in which the back electrode is formed using a conductive paste dispersed in a resin.
また、予め導電性材料粉末をシランカップリング剤で処
理して個々の粒子表面にシランカップリング剤の薄膜を
形成しておき、これをバインダ樹脂中に分散させて導電
ペーストを調製し、この導電ペーストを用いて背面電極
を形成する方法を採用してもよい。この場合、導電性材
料粉末の粒子表面に担持されたシランカップリング剤の
一部がバインダ樹脂中に分散し、この分散したシランカ
ップリング剤が粒子表面のシランカップリング剤と共に
透過光面側の非晶質シリコン膜と厚膜電極との間に介在
することになる。In addition, a conductive material powder is treated with a silane coupling agent in advance to form a thin film of the silane coupling agent on the surface of each particle, and this is dispersed in a binder resin to prepare a conductive paste. A method of forming the back electrode using paste may also be adopted. In this case, a part of the silane coupling agent supported on the particle surface of the conductive material powder is dispersed in the binder resin, and this dispersed silane coupling agent along with the silane coupling agent on the particle surface is It is interposed between the amorphous silicon film and the thick film electrode.
なお、いづれの場合においても、シランカップリング剤
の量は、厚膜電極形成成分の0.2〜3.0ffi量%
に設定するのが好適である。In any case, the amount of the silane coupling agent is 0.2 to 3.0ffi amount% of the thick film electrode forming components.
It is preferable to set it to .
前記厚膜電極を構成する導電性材料粉末としては、従来
の導電ペーストに採用されているニッケル、カーボンそ
の他の良導電性材料を使用すれば良く、また、バインダ
樹脂も従来公知のものを使用すれば良い。As the conductive material powder constituting the thick film electrode, nickel, carbon, or other highly conductive materials that are used in conventional conductive pastes may be used, and binder resins that are conventionally known may be used. Good.
シランカップリング剤としては、厚膜電極を構成するバ
インダ樹脂および導電性材料粉末に応じて市販の任意の
ものを使用でき、代表的なものとしては、例えば、ビニ
ルトリクロロシラン、γ−クロロプロピルトリメトキシ
シラン、γ−メルカプトプロピルトリメトキシシラン、
ビニルトリス(2−メトキシエトキシ)シラン、γ−グ
リシド牛ジプロピルトリメトキシシラン、γ−メタクリ
ロ牛ジプロピルトリメト牛ジシラン、γ−アミノプロピ
ルトリメトキシシランなどが挙げられる。As the silane coupling agent, any commercially available silane coupling agent can be used depending on the binder resin and conductive material powder constituting the thick film electrode. Methoxysilane, γ-mercaptopropyltrimethoxysilane,
Examples include vinyltris(2-methoxyethoxy)silane, γ-glycidal bovine dipropyltrimethoxysilane, γ-methacrylic bovine dipropyltrimethoxysilane, and γ-aminopropyltrimethoxysilane.
シランカップリング剤の介在量を厚膜電極を構成するバ
インダ樹脂および導電性材料粉末の総量の0.2〜3.
0ffifft%としたのは、その介在量が0.2ff
i量%未満では、その電気的特性および接着強度を向上
させる効果が十分に期待できず、また、3.0ffif
fi%を越えると、電極の固有抵抗が増大しオーミック
特性の劣化を生じさせるからである。The intervening amount of the silane coupling agent is 0.2 to 3.0% of the total amount of the binder resin and conductive material powder that constitute the thick film electrode.
The reason why it is set as 0ffifft% is that the amount of the intervention is 0.2ff.
If the amount is less than 3.0ffif%, the effect of improving the electrical properties and adhesive strength cannot be expected sufficiently;
This is because if it exceeds fi%, the specific resistance of the electrode increases and the ohmic characteristics deteriorate.
(作用)
シランカップリング剤は、同一分子中に有機材料と反応
する置換基を有する有機官能性基(例えば、ビニル基、
アミノ基、エポキシ基)と、無機材料と反応する加水分
解性基を持つため、少なくとも厚膜電極と透過光面との
間に介在するシランカップリング剤が非晶質シリコン膜
や導電性材料粉末と化学結合すると共に、厚膜電極中の
樹脂とも化学結合して、両者間の密着性および機械的強
度を向上させる。(Function) The silane coupling agent has an organic functional group (for example, a vinyl group,
(amino group, epoxy group) and a hydrolyzable group that reacts with inorganic materials, the silane coupling agent interposed between at least the thick film electrode and the light transmitting surface can be used as an amorphous silicon film or conductive material powder. It also chemically bonds with the resin in the thick film electrode, improving the adhesion and mechanical strength between them.
(実施例1)
フェノール樹脂1Of(爪部、α−テレピネオール5f
flffi部、ベンジルアルコール5IIlrffi部
からなるフェノール樹脂溶液20重量部にニッケル粉末
80ffiffi部を分散させてなる導電ペーストに、
樹脂の固形分に対し0.5fflffi%のシランカッ
プリング剤(γ−グリシドキシプロピルトリメトキシシ
ラン)を加え、3本ロールで十分に混練して背面電極形
成用導電ペーストを調製した。(Example 1) Phenol resin 1Of (claw part, α-terpineol 5F
A conductive paste is prepared by dispersing 80 parts of nickel powder in 20 parts by weight of a phenolic resin solution consisting of 5 parts of benzyl alcohol and 5 parts of benzyl alcohol.
A silane coupling agent (γ-glycidoxypropyltrimethoxysilane) was added in an amount of 0.5 fflffi% based on the solid content of the resin, and thoroughly kneaded with three rolls to prepare a conductive paste for forming a back electrode.
次いで、第3図に示すように、ガラス製透明基板(1)
上に1TO膜からなる透明電極(2)を形成し、その上
に非晶質のp形シリコン膜(3)、i形シリコン膜(4
)およびn形シリコン膜(5)を順次積層して構成した
太陽電池ユニットの透過光面側シリコン膜上に、前記導
電ペーストを印刷して背面電極(6)を形成し、太陽電
池を得た。Next, as shown in FIG. 3, a glass transparent substrate (1)
A transparent electrode (2) made of a 1TO film is formed on top, and an amorphous p-type silicon film (3) and an i-type silicon film (4) are formed on top of the transparent electrode (2).
) and an n-type silicon film (5) were sequentially laminated on the silicon film on the transparent side side of the solar cell unit, the conductive paste was printed to form a back electrode (6), and a solar cell was obtained. .
(比較例1)
実施例1で調製したニッケル粉末およびフェノール樹脂
溶液からなる導電ペーストを、実施例1と同様に、太陽
電池ユニットの透過光面側に印刷して厚膜電極を形成し
、太陽電池を得た。(Comparative Example 1) A conductive paste made of the nickel powder and phenol resin solution prepared in Example 1 was printed on the transparent side of the solar cell unit to form a thick film electrode in the same manner as in Example 1. Got the battery.
(実施例2)
カーボンブラック40重量部を実施例1と同組成のフェ
ノール樹脂溶液60重量部に分散させてなる導電ペース
トに、樹脂の固形分に対し0.5重量%のシランカップ
リング剤(γ−グリシドキシプロピルトリメトキシシラ
ン)を加え、3本ロールで十分に混練して背面電極形成
用導電ペーストを調製した。(Example 2) A conductive paste made by dispersing 40 parts by weight of carbon black in 60 parts by weight of a phenolic resin solution having the same composition as in Example 1 was added with 0.5% by weight of a silane coupling agent (based on the solid content of the resin). γ-glycidoxypropyltrimethoxysilane) was added thereto and sufficiently kneaded using three rolls to prepare a conductive paste for forming a back electrode.
この導電ペーストを実施例1と同様に太陽電池ユニット
の透過光面側に印刷して厚膜電極を形成し、太陽電池を
得た。This conductive paste was printed on the transparent light side of the solar cell unit in the same manner as in Example 1 to form a thick film electrode, thereby obtaining a solar cell.
(比較例2)
実施例2で調製したカーボンブラックおよびフェノール
樹脂溶液からなる導電ペーストを、実施例1と同様に、
太陽電池ユニットの透過光面側に印刷して厚膜電極を形
成し、太陽電池を得た。(Comparative Example 2) A conductive paste consisting of the carbon black and phenol resin solution prepared in Example 2 was used in the same manner as in Example 1.
A thick film electrode was formed by printing on the transparent light side of the solar cell unit, and a solar cell was obtained.
(実施例3)
ニッケル粉末80重量部を実施例1と同組成のフェノー
ル樹脂溶液20重量部に分散させて背面電極形成用導電
ペーストを調製した。(Example 3) A conductive paste for forming a back electrode was prepared by dispersing 80 parts by weight of nickel powder in 20 parts by weight of a phenol resin solution having the same composition as in Example 1.
次いで、予めシランカップリング剤をイソプロピルアル
コールに溶解して調製した0、5%シランカップリング
剤溶液を太陽電池ユニットの透過光面側に印刷して乾燥
させ、その上に前記導電ペーストを印刷して非晶質シリ
コン太陽電池を得た。Next, a 0.5% silane coupling agent solution prepared in advance by dissolving a silane coupling agent in isopropyl alcohol is printed on the transparent light side of the solar cell unit and dried, and the conductive paste is printed on it. An amorphous silicon solar cell was obtained.
(実施例4)
ニッケル粉末80gに実施例3で調製した0、5%シラ
ンカップリング剤溶液1000ff+1を加えて十分に
撹はんじた後、乾燥させ、これを実施例1と同組成のフ
ェノール樹脂溶液20yに分散させて背面電極形成用導
電ペーストを調製した。(Example 4) 1000ff+1 of the 0.5% silane coupling agent solution prepared in Example 3 was added to 80 g of nickel powder, thoroughly stirred, and then dried. 20y to prepare a conductive paste for forming a back electrode.
この導電ペーストを、実施例1と同様に太陽電池ユニッ
トの透過光面側に印刷して厚膜電極を形成し、太陽電池
を得た。This conductive paste was printed on the transparent light side of the solar cell unit in the same manner as in Example 1 to form a thick film electrode, thereby obtaining a solar cell.
このようにして得られた各太陽電池について、煮沸試験
の前後における電流電圧特性、厚膜電極の密着強度およ
びオーミック性を測定した。なお、煮沸試験は太陽電池
を100°Cの沸騰水中で4時間煮沸することにより行
い、密着強度はクロスカット試験により求めた。それら
の結果を第1表、第1図および第2図に示す。For each solar cell thus obtained, the current-voltage characteristics, adhesion strength of the thick film electrode, and ohmic properties were measured before and after the boiling test. The boiling test was conducted by boiling the solar cell in boiling water at 100°C for 4 hours, and the adhesion strength was determined by a cross-cut test. The results are shown in Table 1, Figures 1 and 2.
第1表の密着強度の細巾、Oは剥離なし、△は部分剥離
、×は全面剥離を意味する。In the narrow width of the adhesion strength shown in Table 1, O means no peeling, Δ means partial peeling, and × means full peeling.
(以 下 余 白) 第1表 ルフ1クタにもとづいて評価した。(Hereafter, extra white) Table 1 The evaluation was based on the Rufu 1 Kuta.
第1表、第1図および第2図に示す結果から明らかなよ
うに、本発明に係る太陽電池は、初期段階はもち論のこ
と煮沸試験後においても極めて良好な密着強度およびオ
ーミック性を示し、優れた電流電圧特性を示す。特に、
導電性材料としてニッケル粉末を用いた場合に、シラン
カップリング剤を介在させた効果が著しく、本発明に係
る太陽電池は優れた保存特性を示す。As is clear from the results shown in Table 1, Figures 1 and 2, the solar cell according to the present invention exhibits extremely good adhesion strength and ohmic properties not only in the initial stage but also after the boiling test. , exhibits excellent current-voltage characteristics. especially,
When nickel powder is used as the conductive material, the effect of intervening the silane coupling agent is remarkable, and the solar cell according to the present invention exhibits excellent storage characteristics.
(発明の効果)
本発明によれば、非晶質シリコン膜との密着強度に優れ
、しかも良好なオーミック接触が得られ、保存特性面で
も信頼性の高い太陽電池が得られる。(Effects of the Invention) According to the present invention, it is possible to obtain a solar cell that has excellent adhesion strength with an amorphous silicon film, good ohmic contact, and high reliability in terms of storage characteristics.
また、印刷法やスプレー法などにより容易に電極を形成
できるため、安価で生産性の高い太陽電池が得られる。Furthermore, since the electrodes can be easily formed by a printing method, a spray method, etc., a solar cell can be obtained at low cost and with high productivity.
第1図および第2図は各種非晶質太陽電池の煮沸試験前
後における電流電圧特性を示すグラフ、第3図は非晶質
太陽電池の構造を示す断面図である。
1〜絶縁性透明基板、2〜透明電極、3.4.5〜非晶
質シリコン膜、6〜背面電極、7〜透過光市。1 and 2 are graphs showing the current-voltage characteristics of various amorphous solar cells before and after a boiling test, and FIG. 3 is a cross-sectional view showing the structure of the amorphous solar cell. 1 - Insulating transparent substrate, 2 - Transparent electrode, 3.4.5 - Amorphous silicon film, 6 - Back electrode, 7 - Transmitted light city.
Claims (3)
る厚膜電極を太陽電池ユニットの透過光面に形成してな
る非晶質太陽電池において、少なくとも前記透過光面と
厚膜電極との境界面にシランカップリング剤を介在させ
てなることを特徴とする非晶質太陽電池。(1) In an amorphous solar cell in which a thick film electrode formed by dispersing conductive material powder in a binder resin is formed on a light-transmitting surface of a solar cell unit, at least a connection between the light-transmitting surface and the thick film electrode is provided. An amorphous solar cell characterized by having a silane coupling agent interposed at the interface.
ップリング剤を含有することを特徴とする請求項1記載
の非晶質太陽電池。(2) The amorphous solar cell according to claim 1, wherein the thick film electrode contains 0.2 to 3.0% by weight of a silane coupling agent.
ランカップリング剤が透過光面または導電性材料粉末に
担持されたシランカップリング剤であることを特徴とす
る請求項1記載の非晶質太陽電池。(3) The silane coupling agent interposed at the interface between the light-transmitting surface and the thick film electrode is a silane coupling agent supported on the light-transmitting surface or conductive material powder. amorphous solar cells.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63324287A JP2748471B2 (en) | 1988-12-22 | 1988-12-22 | Amorphous solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63324287A JP2748471B2 (en) | 1988-12-22 | 1988-12-22 | Amorphous solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02170473A true JPH02170473A (en) | 1990-07-02 |
JP2748471B2 JP2748471B2 (en) | 1998-05-06 |
Family
ID=18164122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP63324287A Expired - Lifetime JP2748471B2 (en) | 1988-12-22 | 1988-12-22 | Amorphous solar cell |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7303788B2 (en) | 2003-03-24 | 2007-12-04 | Canon Kabushiki Kaisha | Method for manufacturing solar cell module having a sealing resin layer formed on a metal oxide layer |
US8455753B2 (en) | 2005-01-14 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Solar cell and semiconductor device, and manufacturing method thereof |
JP2013189637A (en) * | 2009-03-30 | 2013-09-26 | Mitsubishi Materials Corp | Composition for reinforcing film |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6084711A (en) * | 1983-10-14 | 1985-05-14 | 株式会社日立製作所 | Paste for filling in through hole |
JPS63185071A (en) * | 1987-01-27 | 1988-07-30 | Matsushita Electric Ind Co Ltd | Amorphous solar cell |
JPS6454768A (en) * | 1987-08-26 | 1989-03-02 | Fuji Electric Co Ltd | Manufacture of thin film solar cell |
JPH02117177A (en) * | 1988-10-26 | 1990-05-01 | Fuji Electric Co Ltd | Thin film optoelectric transducer |
-
1988
- 1988-12-22 JP JP63324287A patent/JP2748471B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6084711A (en) * | 1983-10-14 | 1985-05-14 | 株式会社日立製作所 | Paste for filling in through hole |
JPS63185071A (en) * | 1987-01-27 | 1988-07-30 | Matsushita Electric Ind Co Ltd | Amorphous solar cell |
JPS6454768A (en) * | 1987-08-26 | 1989-03-02 | Fuji Electric Co Ltd | Manufacture of thin film solar cell |
JPH02117177A (en) * | 1988-10-26 | 1990-05-01 | Fuji Electric Co Ltd | Thin film optoelectric transducer |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7303788B2 (en) | 2003-03-24 | 2007-12-04 | Canon Kabushiki Kaisha | Method for manufacturing solar cell module having a sealing resin layer formed on a metal oxide layer |
US8455753B2 (en) | 2005-01-14 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Solar cell and semiconductor device, and manufacturing method thereof |
JP2013189637A (en) * | 2009-03-30 | 2013-09-26 | Mitsubishi Materials Corp | Composition for reinforcing film |
Also Published As
Publication number | Publication date |
---|---|
JP2748471B2 (en) | 1998-05-06 |
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