JPH02165034A - Hydrogen gas sensor - Google Patents
Hydrogen gas sensorInfo
- Publication number
- JPH02165034A JPH02165034A JP32094388A JP32094388A JPH02165034A JP H02165034 A JPH02165034 A JP H02165034A JP 32094388 A JP32094388 A JP 32094388A JP 32094388 A JP32094388 A JP 32094388A JP H02165034 A JPH02165034 A JP H02165034A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- strain
- film
- gas
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 239000001257 hydrogen Substances 0.000 claims abstract description 36
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 36
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 22
- 239000000956 alloy Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 8
- 239000012466 permeate Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 230000004044 response Effects 0.000 abstract description 8
- -1 polyethylene Polymers 0.000 abstract description 5
- 239000004698 Polyethylene Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 229920000573 polyethylene Polymers 0.000 abstract description 3
- 229910001252 Pd alloy Inorganic materials 0.000 abstract description 2
- 229910001069 Ti alloy Inorganic materials 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229910002335 LaNi5 Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 239000002861 polymer material Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 24
- 238000001514 detection method Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000007084 catalytic combustion reaction Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920006122 polyamide resin Polymers 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、水素検出装置に用いる水素ガスセンサーに関
する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a hydrogen gas sensor used in a hydrogen detection device.
（ロ）従来の技術
従来、可燃性ガス漏れ警報器やガス濃度計に用いられる
ガスセンサーとして、ＳｎＯ，粉末焼結体などを用いた
半導体式ガスセンサーや、白金触媒などを用いた接触燃
焼式ガスセンサーが普及している。そして、半導体ガス
センサーは半導体表面とガスの吸着現象により、電気抵
抗や仕事関数などの物性が変化するという性質を利用す
るものであり、又接触燃焼式ガスセンサーはガス検知機
能を持つ物質の表面でのガスの接触燃焼現象により温度
変化を受けて電気抵抗が変化するという性質を利用する
ものである（特開昭６１−６６９５６号公報、特開昭６
１−２２３６４２号公報参照）。又、本出願人は上記蜆
知の発明以外に互いに連結された水素吸蔵合金及び歪素
子とその歪素子の出力に基づいて水素濃度を判定する水
素濃度検出装置を昭和６３年特許願第１３８９９０号と
して出願している。(b) Conventional technology Traditionally, gas sensors used in flammable gas leak alarms and gas concentration meters include semiconductor gas sensors using SnO, powder sintered bodies, etc., and catalytic combustion type gas sensors using platinum catalysts, etc. Gas sensors are becoming popular. Semiconductor gas sensors utilize the property that physical properties such as electrical resistance and work function change due to the adsorption phenomenon of gas on the semiconductor surface, while catalytic combustion gas sensors utilize the surface of a material that has a gas detection function. This method utilizes the property that electrical resistance changes in response to temperature changes due to the catalytic combustion phenomenon of gas (Japanese Patent Laid-Open No. 61-66956, Japanese Patent Laid-Open No. 66956).
1-223642). In addition to the above-mentioned invention by Shuchi, the present applicant has disclosed a hydrogen storage alloy and a strain element connected to each other, and a hydrogen concentration detection device for determining hydrogen concentration based on the output of the strain element, in Patent Application No. 138990 filed in 1988. The application has been filed as
（ハ）発明が解決しようとする課題
然し乍ら、上記従来のガスセンサーでは、ガスの吸着現
象や燃焼現象などを利用していたため、被検ガス中の各
種ガスに対して反応してしまい、水素ガスのみを選択的
に検知することが困難であった。又、これらのガスセン
サーの作動温度が一般に２００〜５００℃と高温を必要
とするためセンサーの素子の劣化が起こり易い。そして
、本出願人が提案した水素吸蔵合金のみで構成した場合
、被検ガス中に含まれる水分の影響を受けて検出の応答
速度が遅くなる傾向があり、迅速な測定に支障をきたす
問題点があった。(c) Problems to be solved by the invention However, since the conventional gas sensor described above uses gas adsorption phenomena and combustion phenomena, it reacts with various gases in the sample gas, resulting in hydrogen gas It was difficult to selectively detect only the Further, since the operating temperature of these gas sensors generally requires a high temperature of 200 to 500° C., deterioration of the sensor element is likely to occur. In addition, when constructed only with the hydrogen storage alloy proposed by the applicant, the detection response speed tends to be slow due to the influence of moisture contained in the sample gas, which is a problem that hinders rapid measurement. was there.
（ニ）課題を解決するための手段
本発明による水素ガスセンサーは、基板上に歪素子を被
着し、その基板上全体に水素吸蔵合金膜とその上面に水
分を透過し難く水素を透過し易い表面膜を被覆している
。(d) Means for Solving the Problems The hydrogen gas sensor according to the present invention has a strain element deposited on a substrate, a hydrogen storage alloy film on the entire substrate, and a hydrogen absorbing alloy film on its upper surface that is difficult for moisture to permeate but for hydrogen to permeate. It is coated with a surface film that is easy to coat.
（ホ）作用
本発明によれば、水素は透過し易いが水分は透過し難い
表面膜が形成されているため、被検ガス中の水分の大部
分は表面膜を透過せず、水素吸蔵合金の水素吸収現象を
妨げる水分が水素吸蔵合金膜に到達しにくくなる。(E) Effect According to the present invention, since a surface film is formed that allows hydrogen to easily permeate but water does not easily permeate, most of the water in the sample gas does not pass through the surface film, and It becomes difficult for moisture to reach the hydrogen storage alloy film, which hinders the hydrogen absorption phenomenon.
その結果、被検ガス中の水分の影響を受けずに水素吸蔵
合金膜が水素濃度に応じて迅速に体積変化されると共に
、この体積変化により歪素子に歪力を加え、歪素子の歪
量を電気的、或いは機械的に変換して測定し、この測定
値に基づいて水素ガスに対しての検知作用を果たす。As a result, the volume of the hydrogen-absorbing alloy film changes rapidly in accordance with the hydrogen concentration without being affected by moisture in the test gas, and this volume change applies strain force to the strain element, resulting in the amount of strain in the strain element. is measured by converting it electrically or mechanically, and based on this measured value, it performs a detection action on hydrogen gas.
（へ）実施例
以下、本発明の一実施例を図面を用いて詳細に説明する
。第１図は本発明による水素ガスセンサーの断面図を例
示したものである。（１）は樹脂などの絶縁性基板で、
（２）は銅−ニッケル系合金から成る厚み０．０５〜０
．１閾で接着した歪素子である。この歪素子（２）はエ
ツチング等により線幅０．０１〜０．１（財）で全体の
抵抗値が１００Ω程度を示すよう蛇行形成されていて、
応力測定用歪センサーを構成している。（３）（３）は
この歪素子（２）の両端にボンディングしたリード線で
ある。(F) Example Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1 illustrates a cross-sectional view of a hydrogen gas sensor according to the present invention. (1) is an insulating substrate such as resin,
(2) is made of copper-nickel alloy with a thickness of 0.05 to 0.
．． This is a strain element bonded with one threshold. This strain element (2) is formed in a meandering manner by etching or the like so that the line width is 0.01 to 0.1 and the overall resistance value is about 100Ω.
It constitutes a strain sensor for stress measurement. (3) (3) are lead wires bonded to both ends of this strain element (2).
こうして加工された歪素子（２）及びリード線（３）上
には耐熱性を有するポリアミド樹脂層（４）を被覆して
絶縁している。そして、このポリアミド樹脂層（４）の
上面にＬａＮｉ＋’などの水素吸蔵合金膜（５）を蒸着
法、或いはスパッタ法によって、５〜１０μｍの厚みで
膜形成する。更に（６）は水素吸蔵合金膜（５）の上面
に形成された表面膜で、この表面膜（６）は水素は透過
するが水分は殆ど透過させない厚さ３０μｍのポリエチ
レンなどの高分子膜によって構成されている。−尚、比
較例として表面膜（６）を被覆しない水素ガスセンサー
ら同時に作成した。The thus processed strain element (2) and lead wire (3) are coated with a heat-resistant polyamide resin layer (4) for insulation. Then, a hydrogen storage alloy film (5) such as LaNi+' is formed on the upper surface of the polyamide resin layer (4) to a thickness of 5 to 10 μm by vapor deposition or sputtering. Furthermore, (6) is a surface film formed on the upper surface of the hydrogen storage alloy film (5), and this surface film (6) is made of a polymer film such as polyethylene with a thickness of 30 μm that allows hydrogen to pass through but hardly allows moisture to pass through. It is configured. - As a comparative example, a hydrogen gas sensor not covered with the surface film (6) was also produced at the same time.
これらの水素ガスセンサーを用いて応答速度の測定を行
った。測定は上記水素ガスセンサーを純水素雰囲気中で
活性化させた後、リード線（３）を用いて歪素子（２）
からなる歪センサーをホイートストンブリッジ（７）に
組み込み、被検ガス雰囲気中に配置した。The response speed was measured using these hydrogen gas sensors. For measurement, after activating the hydrogen gas sensor in a pure hydrogen atmosphere, connect the strain element (2) using the lead wire (3).
A strain sensor consisting of the following was incorporated into a Wheatstone bridge (7) and placed in the test gas atmosphere.
被検ガス雰囲気中で、歪センサーは水素を水素吸蔵合金
（５）によって吸蔵し、体積をその吸蔵量に応じて膨張
させる。この体積変化は歪素子（２）に対して歪力とし
て印加され、歪素子（２）は歪度台（歪量）に応じて数
μΩ〜数１０ｍΩの範囲で抵抗値を変化させる。この抵
抗値変化をホイートストンブリッジ（７）によって出力
電圧に変換し、更に差動アンプで増幅して出力すれば数
％〜１００％の水素濃度の検出が可能となる。理論的に
は水素吸蔵合金膜（５）は最大約２０％の膨張をするが
、本発明センサーの場合、膜厚が５〜１０．ｃｚｍ程度
なので裂けを生じることはなく、幾度にも渡って使用可
能である。In the test gas atmosphere, the strain sensor stores hydrogen with the hydrogen storage alloy (5) and expands its volume in accordance with the amount of storage. This volume change is applied as a strain force to the strain element (2), and the strain element (2) changes its resistance value in the range of several μΩ to several tens of mΩ depending on the skewness scale (strain amount). If this change in resistance value is converted into an output voltage by a Wheatstone bridge (7), and further amplified by a differential amplifier and output, it becomes possible to detect hydrogen concentrations of several percent to 100%. Theoretically, the hydrogen storage alloy film (5) expands by a maximum of about 20%, but in the case of the sensor of the present invention, the film thickness is 5 to 10%. Since it is about czm, tearing does not occur and it can be used many times.
水素ガスセンサーの水素吸蔵合金に高分子膜を被覆した
本発明例と高分子膜を被覆しない従来例との比較を第４
図の表図にまとめた。The fourth example compares the present invention example in which the hydrogen storage alloy of the hydrogen gas sensor is coated with a polymer film and the conventional example in which the hydrogen storage alloy is not coated with a polymer film.
The results are summarized in the table shown in the figure.
サンプル１は水素は透過するが水分は透過しにくい材料
から成る高分子表面膜を有する本発明に係る水素ガスセ
ンサーを、約１０％の水素ガスと約５％の水分を含むヘ
リウムの被検ガスにさらした場合、サンプル２は表面膜
が存在しない従来構造の水素ガスセンサーを同じ被検ガ
スにさらした場合、サンプル３は対比例として、サンプ
ル２の従来構造の水素ガスセンサーを、約１０％の水素
ガスと約０．１％の水分を含むヘリウムの被検ガスにさ
らした場合であり、各サンプルが最大到達抵抗変化量の
約５０％に達する応答時間を示している。Sample 1 uses a hydrogen gas sensor according to the present invention, which has a polymer surface film made of a material that allows hydrogen to pass through but does not easily allow water to pass through, to a test gas of helium containing about 10% hydrogen gas and about 5% water. Sample 2 is a hydrogen gas sensor with a conventional structure without a surface film, and sample 3 is a comparative example. This is a case where each sample was exposed to a test gas of hydrogen gas and helium containing about 0.1% moisture, and each sample shows the response time to reach about 50% of the maximum resistance change.
この表図から明らかなように、本発明の水素ガスの応答
速度は従来例と比べ、６倍以上速く、従来構造のセンサ
ーが水分を約０．１％しか含まない被検ガスをセンシン
グする場合の応答速度と同じ値が得られることが分かっ
た。As is clear from this table, the response speed of the hydrogen gas of the present invention is more than 6 times faster than that of the conventional example, and when a sensor with a conventional structure senses a sample gas containing only about 0.1% water. It was found that the same value as the response speed can be obtained.
尚、本実施例では表面膜の材料としてポリエチレンを用
いたが、透湿度の小さい高分子材料であればこれに限定
されることはなく、例えばポリプロピレン、塩化ビニリ
デン、セロファン、塩化ビニル、ポリエステル、ポリカ
ーボネート、テフロンポリイミド、酢酸セルロース、ポ
リジメチルシロキサン等多くの高分子材料を使用するこ
とが可能である。Although polyethylene was used as the material for the surface film in this example, it is not limited to this as long as it is a polymeric material with low moisture permeability, such as polypropylene, vinylidene chloride, cellophane, vinyl chloride, polyester, and polycarbonate. , Teflon polyimide, cellulose acetate, polydimethylsiloxane, and many other polymeric materials can be used.
尚、本実施例では水素吸蔵合金としてＬａＮ ｉｓを用
いたが、これ以外に希土類−Ｎｌ系合金、パラジウム系
合金、鉄系合金、チタン系合金、ジルコニウム系合金等
が使用可能である。更に、歪センサーは抵抗素子のみな
らず圧電素子を用いても良い。In this example, LaNis was used as the hydrogen storage alloy, but other materials such as rare earth-Nl alloys, palladium alloys, iron alloys, titanium alloys, zirconium alloys, etc. can be used. Furthermore, the strain sensor may use not only a resistive element but also a piezoelectric element.
（ト）発明の効果
本発明によれば、水素吸蔵合金膜上に、水素は透過する
が水分は透過しにくい材料から成る表面膜を被覆してい
るので、被検ガス中の水分の影響を殆ど受けることなく
応答速度が速い水素ガスセンサーが得られる。またガス
検出は常温で行なえるので、経時変化の少ない信頼性の
高い水素ガスセンサーが得られる。(G) Effects of the Invention According to the present invention, the hydrogen storage alloy membrane is coated with a surface film made of a material that allows hydrogen to pass through but does not allow moisture to pass through easily. A hydrogen gas sensor with a fast response speed and little interference can be obtained. Furthermore, since gas detection can be performed at room temperature, a highly reliable hydrogen gas sensor with little change over time can be obtained.
第１図は本発明による水素ガスセンサーの断面図、第２
図はその主要部の平面図、第３図は検出回路図、第４図
は本発明例と従来例の特性を比較する表図である。
（２）・・・歪素子、
（５）・・・水素吸蔵合金、
（６）・・・高分子膜。FIG. 1 is a sectional view of a hydrogen gas sensor according to the present invention, and FIG.
The figure is a plan view of the main part, FIG. 3 is a detection circuit diagram, and FIG. 4 is a table comparing the characteristics of the example of the present invention and the conventional example. (2)...Strain element, (5)...Hydrogen storage alloy, (6)...Polymer membrane.
Claims (1)
を被う水素吸蔵合金膜と、その合金膜上に設けられた表
面膜とから構成され、この表面膜は水素は透過するが水
分は透過しにくい材料から成り、上記歪素子の出力に基
づいて水素濃度を判定する濃度判定手段を具備した水素
ガスセンサー。(1) Consists of a strain element adhered to the surface of the substrate, a hydrogen storage alloy film covering the surface of the strain element, and a surface film provided on the alloy film, and this surface film is permeable to hydrogen. A hydrogen gas sensor, which is made of a material through which moisture hardly permeates, and is equipped with a concentration determination means for determining hydrogen concentration based on the output of the strain element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32094388A JPH02165034A (en) | 1988-12-19 | 1988-12-19 | Hydrogen gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32094388A JPH02165034A (en) | 1988-12-19 | 1988-12-19 | Hydrogen gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02165034A true JPH02165034A (en) | 1990-06-26 |
Family
ID=18127016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32094388A Pending JPH02165034A (en) | 1988-12-19 | 1988-12-19 | Hydrogen gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02165034A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000206073A (en) * | 1999-01-01 | 2000-07-28 | Equos Research Co Ltd | Method for measuring hydrogen occlusion |
| WO2002039103A1 (en) * | 2000-11-10 | 2002-05-16 | Hrl Laboratories, Llc | Thin film metal hydride hydrogen sensor |
| WO2004047128A3 (en) * | 2002-11-20 | 2004-11-18 | Advanced Tech Materials | Rare earth metal sensor |
| WO2008149752A1 (en) * | 2007-06-04 | 2008-12-11 | Kabushiki Kaisha Atsumitec | Hydrogen sensor |
| JP2011047874A (en) * | 2009-08-28 | 2011-03-10 | Yamatake Corp | Hydrogen gas sensor and oxygen concentration sensor |
| BE1027365B1 (en) * | 2019-06-12 | 2021-01-21 | Burssens Jan Willem | Sensor for measuring a content of an element in a fluid and / or a change of such content in a fluid |
| US11796502B2 (en) | 2017-11-28 | 2023-10-24 | Kabushiki Kaisha Toshiba | Gas sensor |
-
1988
- 1988-12-19 JP JP32094388A patent/JPH02165034A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000206073A (en) * | 1999-01-01 | 2000-07-28 | Equos Research Co Ltd | Method for measuring hydrogen occlusion |
| WO2002039103A1 (en) * | 2000-11-10 | 2002-05-16 | Hrl Laboratories, Llc | Thin film metal hydride hydrogen sensor |
| GB2385932A (en) * | 2000-11-10 | 2003-09-03 | Hrl Lab Llc | Thin film metal hydride hydrogen sensor |
| GB2385932B (en) * | 2000-11-10 | 2005-05-11 | Hrl Lab Llc | Metal hydride hydrogen sensor |
| WO2004047128A3 (en) * | 2002-11-20 | 2004-11-18 | Advanced Tech Materials | Rare earth metal sensor |
| WO2008149752A1 (en) * | 2007-06-04 | 2008-12-11 | Kabushiki Kaisha Atsumitec | Hydrogen sensor |
| JP2011047874A (en) * | 2009-08-28 | 2011-03-10 | Yamatake Corp | Hydrogen gas sensor and oxygen concentration sensor |
| US11796502B2 (en) | 2017-11-28 | 2023-10-24 | Kabushiki Kaisha Toshiba | Gas sensor |
| BE1027365B1 (en) * | 2019-06-12 | 2021-01-21 | Burssens Jan Willem | Sensor for measuring a content of an element in a fluid and / or a change of such content in a fluid |
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