JPH02164079A - Amorphous silicon solar cell - Google Patents
Amorphous silicon solar cellInfo
- Publication number
- JPH02164079A JPH02164079A JP63318555A JP31855588A JPH02164079A JP H02164079 A JPH02164079 A JP H02164079A JP 63318555 A JP63318555 A JP 63318555A JP 31855588 A JP31855588 A JP 31855588A JP H02164079 A JPH02164079 A JP H02164079A
- Authority
- JP
- Japan
- Prior art keywords
- film
- solar cell
- layer film
- electrode
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 34
- 239000011521 glass Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims description 21
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 25
- 239000010410 layer Substances 0.000 description 45
- 239000011159 matrix material Substances 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- QIVUCLWGARAQIO-OLIXTKCUSA-N (3s)-n-[(3s,5s,6r)-6-methyl-2-oxo-1-(2,2,2-trifluoroethyl)-5-(2,3,6-trifluorophenyl)piperidin-3-yl]-2-oxospiro[1h-pyrrolo[2,3-b]pyridine-3,6'-5,7-dihydrocyclopenta[b]pyridine]-3'-carboxamide Chemical compound C1([C@H]2[C@H](N(C(=O)[C@@H](NC(=O)C=3C=C4C[C@]5(CC4=NC=3)C3=CC=CN=C3NC5=O)C2)CC(F)(F)F)C)=C(F)C=CC(F)=C1F QIVUCLWGARAQIO-OLIXTKCUSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光電変換効率の高いアモルファスシリコン太
陽電池に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an amorphous silicon solar cell with high photoelectric conversion efficiency.
従来の高効率アモルファス太陽電池は、特開昭６１−２
５１１７７号公報に記載のように、透過率７５〜８５％
のＳｎＯ２膜またはＩｎ２Ｏ３膜の透明導電性膜を光入
射側の集ｆｊ１電極としてガラス板上に形成し、これを
基板として用いていた。そして、該基板上に１層、１層
及びｎ層から成るアモルファス層の光電変換母体を形成
し、さらにこの上に他方の集電電極（背面電極）として
のＡＱ等の金属電極を形成していた。この従来技術にお
いて、アモルファスシリコン（以下、ａ−３ｉと略す。Conventional high-efficiency amorphous solar cells are disclosed in Japanese Patent Application Laid-Open No. 61-2
As described in Publication No. 51177, the transmittance is 75 to 85%.
A transparent conductive film such as a SnO2 film or an In2O3 film was formed on a glass plate as a collecting fj1 electrode on the light incident side, and this was used as a substrate. Then, a photoelectric conversion matrix of an amorphous layer consisting of one layer, one layer, and n layer is formed on the substrate, and a metal electrode such as AQ as the other current collecting electrode (back electrode) is further formed on this. Ta. In this prior art, amorphous silicon (hereinafter abbreviated as a-3i) is used.
）膜は、ＳｉＨ４や５ｉ２０Ｇを主原料ガスとして、ｐ
Ｉ、ベースのＢ２Ｈ，やＰＨ３を添加し、プラズマＣＶ
Ｄ法で形成され、ａ−９ｉ膜成膜中はＨイオン等の存在
する還元性雰囲気で形成されていた。このため、透明電
極上にａ−３ｉ膜を形成した場合、ａ−３ｉ膜成膜時に
下地の透明電極すなわち酸化物であるＳｎ○２またはＩ
ｎ、０３膜がＨイオン等で還元され、ＳｎまたはＩｎを
析出し、透明電極が変質する結果となっていた。ガラス
基板／透明電極を基板とした太陽電池は、基板が光入射
側に位置するため、透明電極の透過率の低下は、ｐ ／
ｉ ／ ｎ構造の光電変換部への光の到達を減少させ
る結果となり、太陽電池性能を低下させる原因の二つに
なっていた。また、析出したＳｎまたはＩｎ等の金属は
、ａ−８ｉ膜堆積中にａ−８ｉ膜の中に拡散し、ａ−３
ｉ膜質を低下させる原因にもなっていた。) film is made using SiH4 or 5i20G as the main raw material gas.
Add I, base B2H, and PH3, and plasma CV
The a-9i film was formed by the D method in a reducing atmosphere containing H ions and the like. Therefore, when an a-3i film is formed on a transparent electrode, the underlying transparent electrode, which is an oxide of Sn○2 or I
The n,03 film was reduced by H ions, etc., and Sn or In was deposited, resulting in deterioration of the transparent electrode. In a solar cell using a glass substrate/transparent electrode as a substrate, the substrate is located on the light incident side, so the decrease in transmittance of the transparent electrode is p/
This results in a reduction in the amount of light reaching the photoelectric conversion part of the i/n structure, which is two of the causes of deterioration in solar cell performance. In addition, precipitated metals such as Sn or In diffuse into the a-8i film during the a-8i film deposition, and the a-3
It was also a cause of deterioration of film quality.
上記従来技術は、ａ−８ｉ膜堆積時における下地の透明
電極の還元、変質は完全に防止できておらず、太陽電池
性能の高効率化に問題があった。The above-mentioned conventional technology cannot completely prevent the reduction and deterioration of the underlying transparent electrode during deposition of the a-8i film, and has a problem in increasing the efficiency of solar cell performance.
本発明の目的は、酸化物の透明電極を必要とせず、アモ
ルファスシリコン系材料の低抵抗化により、光電変換母
体の一部を構成するアモルファスシリコン系材料自体を
光入射側電極として用い光電変換効率の高いアモルファ
スシリコン太ｌＳ電池を提供することにある。The purpose of the present invention is to improve the photoelectric conversion efficiency by using the amorphous silicon material itself, which constitutes a part of the photoelectric conversion matrix, as the light incident side electrode by reducing the resistance of the amorphous silicon material without requiring a transparent oxide electrode. An object of the present invention is to provide an amorphous silicon thick IS battery with high performance.
上記目的を達成するために、従来型の光電変換母体であ
るｐｉｎ構造で光入射側に位置するｐＨあるいはｎＪｌ
に替えて低抵抗なＰ＋層膜あるいはｎ＋層膜を形成し、
層膜を光入射側電極とし、そして、光入射側のみならず
背面側のｎ層あるいは１層にも低抵抗膜の形成は可能で
あり、Ｐ＋ｉ ｎ＋構造あるいはｎ”ｉｐ＋Ｐ＋とした
ものである。In order to achieve the above purpose, in the pin structure of the conventional photoelectric conversion matrix, the pH or nJl
Instead, a low-resistance P+ layer film or n+ layer film is formed,
It is possible to form a low resistance film not only on the light incident side but also on the n layer or one layer on the back side by using the layer film as the light incident side electrode, and it is possible to form a P+i n+ structure or n''ip+P+.
また、ｐｉｎ構造で光入射側に位置するｐｍあるいはｎ
層の光入射側面上に、さらに低抵抗なＰ＋層膜あるいは
ｎ＋層膜を形成し、ｐ”ｐｉｎ構造あるいはｎ”ｎ ｉ
ｐ構造としたものである。当然、背面側においても同
様なｐ ｐｉｎｎ’ｐｐ”構造とすることが可能であ
る。Also, in the pin structure, pm or n located on the light incident side
A low-resistance P+ layer or n+ layer is further formed on the light incident side of the layer to form a p"pin structure or n"ni
It has a p structure. Naturally, a similar p pinn'pp'' structure can be provided on the back side as well.
さらに上記目的を達成するために、光入射側のｐ”１ｌ
ｌｕまたはｎ＋層膜の光入射側面上にパターン状の金属
電極を発電有効面積の一部に設け 、＋層膜またはｎ＋
層膜の光入射側電極と金属電極とで光生成電流の集電を
行なわせたものである。該パターン状金ｙｔ電極の形状
はストライブに限る必要はなく、クロス状、放射線状、
同心円状など。Furthermore, in order to achieve the above purpose, p"1l on the light incidence side
A patterned metal electrode is provided on a part of the effective power generation area on the light incident side of the lu or n+ layer film, and the + layer film or n+ layer film is
The photo-generated current is collected between the light incident side electrode of the layered film and the metal electrode. The shape of the patterned gold yt electrode is not limited to stripes, and may be cross-shaped, radial,
Concentric circles etc.
遮光率が低く、集電時の直列抵抗損の小さい形状であれ
ば、いずれでも良い。Any shape may be used as long as it has a low light shielding rate and a small series resistance loss during current collection.
上記目的を達成するために、基板にガラス板を用いた場
合、ガラス板上に屈折率１．７〜２．５の絶縁性光透過
膜を形成し、この上にＰ＋層膜あるいは、パターン状金
属電極とＰ＋層膜を形成し、さらに１層膜やＣ１膜を順
次形成しアモルファスシリコン太陽電池としたものであ
る。In order to achieve the above objective, when a glass plate is used as a substrate, an insulating light-transmitting film with a refractive index of 1.7 to 2.5 is formed on the glass plate, and a P+ layer film or a patterned A metal electrode and a P+ layer film are formed, and a single layer film and a C1 film are sequentially formed to obtain an amorphous silicon solar cell.
上記目的を達成するため、Ｐ＋層膜またはｎ＋層膜に微
結晶シリコン、微結晶シリコン合金等を用い、また、こ
れらの膜の比抵抗を１．５Ω・備以下としてアモルファ
スシリコン太陽電池したものである。In order to achieve the above purpose, an amorphous silicon solar cell is manufactured by using microcrystalline silicon, microcrystalline silicon alloy, etc. for the P+ layer film or the n+ layer film, and setting the resistivity of these films to 1.5Ω or less. be.
〔作用〕
ＳｎＯ，やＩｎ２Ｏ３等の透明電極を用いず、光電変換
母体の一部を構成するＰ＋層膜及び、またはｎ＋膜自体
を光入射側電極として用いる場合は、Ｐ＋層膜及び、ま
たはｎ＋層膜が電極用として低抵抗でなくてはならない
。従来の透明電極を用いていたときのｐ層膜はグロー放
電法で形成し、比抵抗が１０’ 〜１０”Ω・１程度の
ａ −Ｓ ｉ Ｃ膜であリ、該ａ−３ｉＣ膜自体を光入
射側電極として用いた場合、層膜の抵抗が高く、太陽電
池用電極としては使用できなかった。しかし、マイクロ
波プラズマＣＶＤ法により得られるｐ型ＳｉＣ膜は、微
結晶化ＳｉＣ膜（μｃ−８ｉＣ膜）となっており、先の
Ｐ型ａ−ＳｉＣ膜と比較すると、例えば。[Function] When using the P+ layer film and/or n+ film itself, which constitutes a part of the photoelectric conversion matrix, as the light incident side electrode without using a transparent electrode such as SnO or In2O3, the P+ layer film and/or n+ film itself is used as the light incident side electrode. The layer must have low resistance for use as an electrode. When a conventional transparent electrode is used, the p-layer film is formed by a glow discharge method and is an a-SiC film with a specific resistance of about 10' to 10"Ω・1, and the a-3iC film itself When used as the light incident side electrode, the resistance of the layer film was high and it could not be used as an electrode for solar cells.However, the p-type SiC film obtained by microwave plasma CVD method is (μc-8iC film), and when compared with the previous P-type a-SiC film, for example.
同じ光学的バンドギャップ２．１ｅＶにおいてμｃ−５
ｉＣ膜の比抵抗が１０−’〜１０−”Ω・儂程度で、約
８桁程の低抵抗化の改善が図られている。このＰ＋型μ
ｃ−３ｉＣ膜は、光電変換母体であるｐ／ｉ／ｎ構造の
２層の代わりにｐ”ＪＷとして使用でき、またｐ＋層自
体が光入射側電極ししても動作する。それによって、従
来の透明電極が不用になるばかりでなく、透明電極自体
の変質及び透明電極からの不純物拡散を防止でき、光電
変換効率の高いアモルファスシリコン太陽電池が得られ
る。μc-5 at the same optical bandgap 2.1 eV
The specific resistance of the iC film is about 10-' to 10-' Ω·min, which is an improvement of about 8 orders of magnitude.This P+ type μ
The c-3iC film can be used as a p''JW instead of the two layers of the p/i/n structure that are the photoelectric conversion base, and the p+ layer itself can also function as the light incident side electrode. This not only eliminates the need for a transparent electrode, but also prevents deterioration of the transparent electrode itself and diffusion of impurities from the transparent electrode, resulting in an amorphous silicon solar cell with high photoelectric conversion efficiency.
従来の太陽電池構造はガラス基板／透明電極／ｐ／ｉ／
ｎ／金属電極であり、光電変換母体であるｐ／ｉ／ｎで
光吸収され生成された光生成電流は、積層し形成された
ｐ ／ ｉ ／ ｎ接合面に対し、またＰ＋ ｉｍ ｎ
の各層に対し垂直に流れ、光入射側の透明電極及び背面
側の金属電極に到達して初めて光生成電流が画電極を通
して接合面に平行に流れ集電されていた。しかし、本発
明では、光電変換母体の一部を構成するｐ＋層自体が光
入射側電極として作用するため、Ｐ＋層内を通して光生
成電流が接合面と平行に流れることになる。The conventional solar cell structure is glass substrate/transparent electrode/p/i/
The photo-generated current generated by light absorption at p/i/n, which is a metal electrode and a photoelectric conversion matrix, is transferred to the p/i/n junction surface formed by stacking, and to the p/i/n junction surface formed by stacking the p/i/n
The photogenerated current flows perpendicularly to each layer of the photoelectrode, and only after reaching the transparent electrode on the light incident side and the metal electrode on the back side, does the photogenerated current flow parallel to the bonding surface through the picture electrode and is collected. However, in the present invention, since the p+ layer itself, which constitutes a part of the photoelectric conversion matrix, acts as a light incident side electrode, the photogenerated current flows through the p+ layer in parallel to the junction surface.
本発明では、従来の太陽電池の光電変換母体を成すｐｉ
ｎ構造をそのまま用いても良い、この場合は、さらに該
高抵抗２層の光入射側面上に光入射側電極となりうる低
抵抗Ｐ＋層を設けることにより、アモルファスシリコン
太陽電池とすることができる。In the present invention, pi, which forms the photoelectric conversion matrix of conventional solar cells,
The n structure may be used as is. In this case, an amorphous silicon solar cell can be obtained by further providing a low resistance P+ layer that can serve as a light incident side electrode on the light incident side surface of the two high resistance layers.
光入射側電極として用いるアモルファスシリコン系材料
の低抵抗で、かつ広バンドギヤツプ材料が良い、また、
光入射側電極上の光入射面上に、ストライブ状等のパタ
ーン状金属電極を発電有効面積の一部に設け、光生成電
流の集電を光入射側電極と金属電極とで分割・集電する
ことができる。The amorphous silicon material used as the light incident side electrode has a low resistance and a wide band gap.
A patterned metal electrode such as a stripe is provided on the light incidence surface of the light incidence side electrode in a part of the effective power generation area, and the collection of photogenerated current is divided and collected between the light incidence side electrode and the metal electrode. can be powered.
アモルファスシリコン太陽電池の光入射側の２層の膜厚
は、ｐ”Ｍでの光吸収損失を小さくするため薄くして使
用することが望ましい、しかし、薄くなるとＰ＋層を流
れる電流密度が増大し、太陽電池として抵抗成分が増加
する結果となる。It is desirable to reduce the thickness of the two layers on the light incident side of an amorphous silicon solar cell in order to reduce the light absorption loss in the p''M layer.However, as the thickness becomes thinner, the current density flowing through the P+ layer increases. , this results in an increase in the resistance component of the solar cell.
ｐ”Ｈを薄くして使用する場合は、Ａｆｌ、Ａｇ、Ｔｉ
、Ｃ’ｒ、またはＳＵＳ等のパターン状金属電極を、発
電有効面積の一部に設ける事により、太陽電池としての
直列抵抗を下げることができ、太陽光照射下での直列抵
抗による特性低下を低減し。When using with a thin p”H, Afl, Ag, Ti
By providing a patterned metal electrode such as , C'r, or SUS in a part of the effective power generation area, the series resistance of the solar cell can be lowered, and the deterioration of characteristics due to series resistance under sunlight irradiation can be reduced. Reduced.
高効率化を実現することができる。High efficiency can be achieved.
さらに、光入射側にガラス基板を用いた場合は、ガラス
基板（屈折率１．４５）と光入射側電極となるアモルフ
ァスシリコン系材料（屈折率３．５〜４．０）との屈折
率の差が大きいため、両者間に屈折率２．１前後の値、
即ち１．７〜２．５の光透過膜を形成することにより光
学マツチングを改善し入射光の界面反射損を低減させる
ことができる。Furthermore, when a glass substrate is used on the light incidence side, the refractive index of the glass substrate (refractive index 1.45) and the amorphous silicon material (refractive index 3.5 to 4.0) that becomes the light incidence side electrode is Due to the large difference, the refractive index between the two is around 2.1,
In other words, by forming a light transmitting film having a diameter of 1.7 to 2.5, optical matching can be improved and interface reflection loss of incident light can be reduced.
また、光入射側電極としての１１膜に微結晶シリコンま
たは微結晶シリコン合金等の微結晶化膜を用いることに
より、太陽電池の高率化を図ることができる。これは、
膜の微結晶化により膜の活性化エネルギーが小さくなり
、このため太陽電池の開放電圧が大きくなり高光電変換
効率を有する太陽電池を得ることができる。Furthermore, by using a microcrystalline film such as microcrystalline silicon or microcrystalline silicon alloy for the film 11 serving as the light incident side electrode, it is possible to increase the efficiency of the solar cell. this is,
Microcrystallization of the film reduces the activation energy of the film, thereby increasing the open circuit voltage of the solar cell, making it possible to obtain a solar cell with high photoelectric conversion efficiency.
そして、該アモルファスシリコン太陽電池において、光
照射時に出力の直列抵抗損が無視できる、あるいは小さ
い必要がある６そのための上記ｐ＋あるいはｎ＋層の比
抵抗の許容値は金属パターン電極との組み合わせや光照
射強度等によって決まる。例えば、第８図に示す幅Ｗの
細長い素子におけるＰ＋あるいはｎ＋層での出力積（％
）はで表わせる。ここでＪ、、Ｖ、は出力電流、出力電
圧、Ｑｓは金属電極間隔、ρ、ｔはｐ４″あるいはｎ１
層の比抵抗と膜厚である。照射光強度が１００ｍＷ／ａ
ＪのときにはＪ、＝１２ｍＡ／ｃｏｔ。In the amorphous silicon solar cell, the output series resistance loss must be negligible or small during light irradiation6.For this purpose, the permissible value of the specific resistance of the p+ or n+ layer is determined by the combination with the metal pattern electrode and the light irradiation. Determined by strength etc. For example, the output product (%
) can be expressed as. Here, J,, V, are output current, output voltage, Qs is metal electrode spacing, ρ, t are p4'' or n1
These are the specific resistance and film thickness of the layer. Irradiation light intensity is 100mW/a
When J, J = 12mA/cot.
Ｖ、＝０．７ｖｏｌｔ、 ｆｆｉｓ＝１００ｐｍ、
ｔ＝１５０人とすると、出力積が無視できる１％以下
のとき（１）式と次式
Ｐ露ａｓｓ ＜１ ％
ρ く ρｌＩ＆χ
のρ、＆８は０．１Ω・ｌとなる。V, = 0.7 volt, ffis = 100 pm,
Assuming that t=150 people, when the output product is negligible 1% or less, equation (1) and the following equation Pass <1 % ρ ρ, &8 of ρlI&χ become 0.1Ω·l.
該太陽電池構造は、金属パターン電極によるシャドーロ
ス分が約５％であるが、従来の透明電極を用いた場合の
透明電極自体の光吸収ロスが約１５％〜２５％あるため
差し引き上記Ｊ０値を１０％以上増大させるから、出力
積が１％以下ではなく２〜３％であったとしても従来型
素子に比べ高出力である。また膜厚ｔは２００〜３００
人でもよいから、上記ρｌ１ａｘは、０．５Ω・１とな
る。In this solar cell structure, the shadow loss due to the metal pattern electrode is about 5%, but when a conventional transparent electrode is used, the light absorption loss of the transparent electrode itself is about 15% to 25%, so the above J0 value is subtracted. Since it increases by more than 10%, even if the output product is 2 to 3% instead of 1% or less, the output is higher than that of the conventional element. Also, the film thickness t is 200 to 300
Since it may be a person, the above ρl1ax is 0.5Ω·1.
さらに、ＪＩ、値が小さいタンデム型太陽電池ではρｍ
＆Ｍは１．５Ω・備でもよい。Furthermore, for tandem solar cells with small JI values, ρm
&M may be 1.5Ω.
上記出力積は照射光強度にほぼ比例するから、１００ｍ
Ｗ／ａＪのとき０．５Ω’ｅ１ｍであるｐ ｍａＸは１
ｍＷ／ａｄでは５０Ω・ｔｙａ、 １０−”ｍＷ／ａｄ
では５ Ｘ １０’Ω・国であってよい。Since the above output product is approximately proportional to the irradiation light intensity, 100 m
When W/aJ, p maX which is 0.5Ω'e1m is 1
mW/ad is 50Ω・tya, 10-”mW/ad
Then it may be 5 x 10'Ω/country.
アモルファスシリコン太陽電池を作製する場合、光入射
側電極としてｐ＋層膜自体を用いる事を述べたが、ｐ＋
層にかぎらずｎ＋層も同じ製膜法で膜の低抵抗化ができ
る。得られたｎ＋型μＣ−３ｉＣ膜は、比抵抗が３Ｘ１
０−３Ω・ｌ程度あり。When producing an amorphous silicon solar cell, it was mentioned that the p+ layer film itself is used as the light incident side electrode, but the p+
Not only the N+ layer but also the N+ layer can be formed with the same film formation method to reduce the resistance of the film. The resulting n+ type μC-3iC film has a specific resistance of 3X1
Approximately 0-3Ω・l.
Ｐ＋型のμｃ−ＳｉＣ膜よりも低い比抵抗を示す。It exhibits a lower specific resistance than the P+ type μc-SiC film.
このため、ｎ”ｆｆｉ膜自体を光入射側及び、または背
面側の集電電極として使用することができる。Therefore, the n''ffi film itself can be used as a current collecting electrode on the light incident side and/or the back side.
従来、背面側の１層には、金属電極をｎ層全面に形成し
ていたが、ｎ＋層を集電電極とすることにより、この金
属電極も不用となる。しかし、太陽電池の背面側は、光
入射側のように光透過率を上げる必要はないが、逆に通
過する光を再び膜中へ反射させることは重要である。こ
の点に関しては、背面側に金属電極を設ける方が望まし
い、太ＩＳ電池の直列抵抗低減及び裏面光反射効果（光
とじ込め効果）の点では、背面側に金属電極を設けた方
が太陽電池の高効率化に有利な場合がある。Conventionally, a metal electrode was formed on the entire surface of the n layer in one layer on the back side, but by using the n+ layer as a current collecting electrode, this metal electrode is also unnecessary. However, although it is not necessary to increase the light transmittance on the back side of the solar cell as on the light incident side, it is important to reflect the passing light back into the film. Regarding this point, it is preferable to provide a metal electrode on the back side of the solar cell.In terms of reducing the series resistance of thick IS batteries and the back surface light reflection effect (light trapping effect), it is better to provide a metal electrode on the back side of the solar cell. It may be advantageous to increase efficiency.
本発明では、ガラス基板／ｐ”ｉｎ＋構造が可能である
だけでなく、ガラス基板／ｐ”ｐｉｎ”／＋ガラス基板
／Ｐ”Ｐｉｎｎ＋構造や、パターン状金属電極を用いる
ことによりガラス基板／パターン電極／ ｐ ” ｌ
ｎ ” Ｈガラス基板／パターン電極／ｐ ＋ ｘ ｎ
” ／パターン電極（あるいは全面金属電極）構造が
得られ、さらに光学マツチングのため光透過膜を設ける
ことによりガラス基板／光透過膜／ｐ＋ｉｎ＋、ガラス
騙板／光透過膜／パターン電極／ｐ”ｉｎ＋構造が簡単
に得られ、また、これらの構造の組合せにより種々の構
造が形成できる。そして同様に上記の逆タイプ構造も形
成でき、さらに、基板材料に、透明なガラス板以外にも
、セラミックス等の絶縁物材料や金属等の良導体材料を
使用できる。In the present invention, not only a glass substrate/p"in+ structure is possible, but also a glass substrate/patterned electrode by using a glass substrate/p"in"/+glass substrate/P"Pinn+ structure and a patterned metal electrode. /p”l
n”H glass substrate/pattern electrode/p + x n
”/A patterned electrode (or full-surface metal electrode) structure is obtained, and by further providing a light-transmitting film for optical matching, glass substrate/light-transmitting film/p+in+, glass decoupling plate/light-transmitting film/patterned electrode/p”in+ The structure can be easily obtained, and various structures can be formed by combining these structures. Similarly, the above-mentioned reverse type structure can be formed, and in addition to the transparent glass plate, an insulating material such as ceramics or a good conductive material such as metal can be used as the substrate material.
以下、本発明を実施例にて説明する。 The present invention will be explained below with reference to Examples.
実施例１
本実施例は、第１図により説明する。第１図は、ガラス
板１の上に作製したガラス板／ ｐ ’ ｉ、 ｎ＋構
造のアモルファスシリコン太陽電池である。ガラス板１
の上に、マイクロ波プラズマＣＶＤ法により２５０Ａの
ｐ＋型μｃ −Ｓ ｉ Ｃ膜２を形成し。Example 1 This example will be explained with reference to FIG. FIG. 1 shows an amorphous silicon solar cell having a glass plate/p′ i, n+ structure fabricated on a glass plate 1. glass plate 1
A p+ type μc-SiC film 2 of 250 A is formed thereon by microwave plasma CVD.
順次６０００Ａのｉ型ａ−９ｉ膜３、及び４５０Ａのｎ
“型μＱ−８ｉＣ膜４を形成した。ｐ”Ｍ膜は、Ｓ ｉ
Ｈ４，Ｂ、Ｈ，（Ｉ−Ｉ、ベース）、ＣＨ，及びＨ２
の各種ガスを用いて形成した。そしてｉＷＩ膜はＳｉＨ
４，ｎ＋層膜はＳｉＨ，とＰＨ１（Ｈ２ベース）の各種
ガスを用いて成膜した。光入射側はガラス板側であり、
ｐ＋層が光入射側電極またｎ＋層が背面電極である。Sequentially 6000A i type a-9i film 3 and 450A n
A "p" type μQ-8iC film 4 was formed.
H4, B, H, (I-I, base), CH, and H2
It was formed using various gases. And the iWI film is SiH
4. The n+ layer film was formed using various gases including SiH and PH1 (H2 base). The light incidence side is the glass plate side,
The p+ layer is the light incident side electrode, and the n+ layer is the back electrode.
得られた太陽電池の性能は、太陽光１００ｍＷ／ｄ照射
下で、光電変換効率：９．０％、短絡電流密度：１５．
５ｍＡ／ａＪ、開放電圧：０，８８Ｖ、曲線因子：０，
６６であった。The performance of the obtained solar cell was as follows: under 100 mW/d sunlight irradiation, photoelectric conversion efficiency: 9.0%, short circuit current density: 15.
5mA/aJ, open circuit voltage: 0.88V, fill factor: 0,
It was 66.
実施例２
本実施例は、第２図により説明する。第２図はガラス板
１の上に作製したガラス板／ｐ＋Ｐｉｎ＋構造のアモル
ファスシリコン太ｌｌ！！電池である。ガラス板１の上
に、マイクロ波プラズマＣＶＤ法により２００Ａのｐ＋
型μａ−８ｉＣ膜２を形成し。Example 2 This example will be explained with reference to FIG. Figure 2 shows an amorphous silicon film with a glass plate/p+Pin+ structure fabricated on the glass plate 1! ! It's a battery. A p+ of 200 A was applied on the glass plate 1 by microwave plasma CVD method.
A type μa-8iC film 2 is formed.
次に６０Ａのｐ型ａ−８ｉＣ膜５を形成し、順次６００
０Ａのｉ型ａ−３ｉ膜３、及び４５０Ａのｎ＋＋μｃ−
８ｉＣ膜４を形成した。ｐ型ａ−３ｉＣ型５は、ｐ＋型
ｐ ｃ −Ｓ ｉ Ｃ膜２と同様な方法で得られるが、
反応圧力、基板温度、マイクロ波パワー、ガス組成等の
最適な選定により得られる。Next, a 60A p-type a-8iC film 5 is formed, and 60A
0A i type a-3i film 3 and 450A n++μc-
An 8iC film 4 was formed. The p-type a-3iC type 5 is obtained by the same method as the p+ type p c -S i C film 2, but
This can be achieved by optimally selecting reaction pressure, substrate temperature, microwave power, gas composition, etc.
得られた太陽電池の性能は、実施例−１と同じ測定法に
より、光電変換効率：９．６％、短絡電流密度：１５．
８ｍＡ／ａＪ、開放電圧：０，８９Ｖ。The performance of the obtained solar cell was determined by the same measuring method as in Example-1: photoelectric conversion efficiency: 9.6%, short circuit current density: 15.
8mA/aJ, open circuit voltage: 0.89V.
曲線因子：０．６８であった。Fill factor: 0.68.
実施例３
本実施例は、第３図により説明する。第３図は、ガラス
板１の上に作製したガラス板／ｐ＋ｐｉｎ構造のアモル
ファスシリコン太陽電池である。ガラス板１の上に、２
００Ａのｐ＋＋μｃ −Ｓ ｉ Ｃ膜２を形成し、次に
６０Ａのｐ型ａ −Ｓ ｉ Ｃ膜５を形成し、順次６０
００Ａのｉ型ａ −Ｓ ｉ膜３．６０Ａのｎ型ａ −Ｓ
ｉ Ｃ膜６．及び４００Ａのｎ＋＋μｃ−８ｉＣ膜４
を形成した。Example 3 This example will be explained with reference to FIG. FIG. 3 shows an amorphous silicon solar cell having a glass plate/p+pin structure fabricated on a glass plate 1. FIG. on glass plate 1, 2
A p++μc-S i C film 2 of 00A is formed, then a p-type a-S iC film 5 of 60A is formed, and then a p++μc-S iC film 2 of 60A is formed.
00A i-type a-S i film 3.60A n-type a-S
iC membrane6. and 400A n++μc-8iC film 4
was formed.
得られた太陽電池の性能は、光電変換効率：９．９％、
短絡電流密度：１６．ＯｍＡ／ａＪ、開放電圧：０．９
０Ｖ、曲線因子：０．６９であった。The performance of the obtained solar cell was as follows: photoelectric conversion efficiency: 9.9%;
Short circuit current density: 16. OmA/aJ, open circuit voltage: 0.9
0V, fill factor: 0.69.
実施例４
本実施例は、第４図により説明する。第４図は、ガラス
板１の上にパターン状金属電極７を有するガラス板／パ
ターン状金属電極／ｐ”ｉｎ＋構造のアモルファスシリ
コン太陽電池である。ガラス板１の上に厚さ０．５μｍ
１間隔１００μｍのストライプ状のＣｒ金属のパターン
状金属電極７を形成し、順次実施例−１と同様にｐ”ｉ
ｎ＋構造のアモルファスシリコン膜を形成した。Example 4 This example will be explained with reference to FIG. FIG. 4 shows an amorphous silicon solar cell having a glass plate/patterned metal electrode/p”in+ structure with a patterned metal electrode 7 on the glass plate 1.
Patterned metal electrodes 7 made of Cr metal are formed in stripes with an interval of 100 μm, and p”i
An amorphous silicon film with an n+ structure was formed.
得られた太陽電池の性能は、光電変換効率：９．９％、
短絡電流密度：１５．８ｍＡ／ａＪ、開放電圧：０．８
８Ｖ、曲線因子： ０．７１であった。The performance of the obtained solar cell was as follows: photoelectric conversion efficiency: 9.9%;
Short circuit current density: 15.8mA/aJ, open circuit voltage: 0.8
8V, fill factor: 0.71.
実施例５
本実施例は、第５図により説明する。第５図は、ガラス
板１の上に形成したパターン状金属電極７及び背面電極
側に設けたパターン状金属電極８を有するガラス板／パ
ターン状金属電極／ｐ＋ｉｎ＋／パターン状金属電極構
造のアモルファスシリコン太陽電池である。実施例−４
の太陽電池の背面電極としてのｎ＋暦模膜上パターン状
金属電極８を設けた太陽電池である。金属電極８は、金
ｐＡ電極７と同一のものとした。Example 5 This example will be explained with reference to FIG. FIG. 5 shows amorphous silicon having a glass plate/patterned metal electrode/p+in+/patterned metal electrode structure having a patterned metal electrode 7 formed on a glass plate 1 and a patterned metal electrode 8 provided on the back electrode side. It's a solar cell. Example-4
This solar cell is provided with a patterned metal electrode 8 on an n+ pattern as a back electrode of the solar cell. The metal electrode 8 was the same as the gold pA electrode 7.
得られた太陽電池の性能は、光電変換効率＝１０．１％
、短絡電流密度： １６．ＯｍＡ／ａ＃、開放電圧：０
．８９Ｖ、曲線因子： ０．７１であった。The performance of the obtained solar cell is photoelectric conversion efficiency = 10.1%
, short circuit current density: 16. OmA/a#, open voltage: 0
．． 89V, fill factor: 0.71.
実施例６ 本実施例は、第６図により説明する。第６図は。Example 6 This embodiment will be explained with reference to FIG. Figure 6 is.
実施例１のガラス板１とｐ１型μｃ−８ｉＣ膜２との間
に光透過膜９として６００Ａ厚のＴｉ０ｖを熱ＣＶＤ法
により形成したガラス板／光透過膜／ｐ＋ｉｎ＋構造の
アモルファスシリコン太陽電池である。該太陽電池では
、ガラス板、ＴｉＯ、ｐ４型μ０−５ｉＣの屈折率が１
．４５．２．２．３．６であるため、ＴｉＯを設けるこ
とにより屈折率のマツチングが良くなり界面反射損が減
少し、短絡電流密度が大きくなり光電変換効率も高くな
った。An amorphous silicon solar cell with a glass plate/light transmitting film/p+in+ structure in which a 600A thick Ti0v film was formed as a light transmitting film 9 between the glass plate 1 of Example 1 and the P1 type μC-8iC film 2 by thermal CVD. be. In this solar cell, the refractive index of the glass plate, TiO, and p4 type μ0-5iC is 1.
．． 45.2.2.3.6, the provision of TiO improved refractive index matching, reduced interface reflection loss, increased short circuit current density, and increased photoelectric conversion efficiency.
得られた太陽電池の性能は、光電変換効率：１０．４％
、短絡電流密度： １６．５ｍＡ／ａＪ、開放電圧：０
．ｐ＋Ｖ、曲線因子：０．６９であった。The performance of the obtained solar cell was as follows: photoelectric conversion efficiency: 10.4%
, short circuit current density: 16.5mA/aJ, open circuit voltage: 0
．． p+V, fill factor: 0.69.
実施例７
本実施例は、第７図により説明する。第７図は、実施例
６の光透過膜９とｐ＋＋μｃ−３ｉＣ膜２との間に、ス
トライプ状のパターン状金属電極７を設けたガラス板／
光透過膜／パターン状金属電極／Ｐ＋ｉｎ＋構造のアモ
ルファスシリコン太陽電池である。パターン状金属電極
７は、実施例４で用いたストライプ状のＣｒ＠極と同一
のものを使用した。Example 7 This example will be explained with reference to FIG. FIG. 7 shows a glass plate/glass plate in which a striped patterned metal electrode 7 is provided between the light transmitting film 9 and the p++μc-3iC film 2 of Example 6.
This is an amorphous silicon solar cell with a light-transmitting film/patterned metal electrode/P+in+ structure. The patterned metal electrode 7 used was the same as the striped Cr@ electrode used in Example 4.
得られた太陽電池の性能は、光電変換効率＝１０．５％
、短絡電流密度：１６．２ｍＡ／ｃｄ、開放電圧：０．
ｐ＋Ｖ、曲線因子：０．７１であった。The performance of the obtained solar cell is photoelectric conversion efficiency = 10.5%
, short circuit current density: 16.2 mA/cd, open circuit voltage: 0.
p+V, fill factor: 0.71.
本発明によれば、光入射側電極に透明電極を用いること
が不用であり、透明電極の還元、変質及び透明電極成分
によるａ−５ｉ膜の膜質汚染等の影響が無くなり、太陽
電池の性能向上に効果がある。また、透明電極自体の作
製が不用であるため、透明電極形成装置やプロセス等を
考慮する必要がなく太陽電池製造の面で大幅な低コスト
化が実現できる。According to the present invention, it is not necessary to use a transparent electrode as the light incident side electrode, and the effects of reduction and deterioration of the transparent electrode and contamination of the a-5i film due to transparent electrode components are eliminated, and the performance of the solar cell is improved. is effective. Furthermore, since the production of the transparent electrode itself is unnecessary, there is no need to consider the transparent electrode forming apparatus or process, and a significant cost reduction can be achieved in terms of solar cell production.
本発明によれば、光入射側電極及び背面電極をｐ１型ま
たはｎ＋型の微結晶シリコン等とすることにより高い開
放電圧が得られ、かつ光電変換母体の一部を構成する材
料が集１！電極の役目をしているため太陽電池のプロセ
スが簡略化している。According to the present invention, a high open circuit voltage can be obtained by making the light incident side electrode and the back electrode of p1 type or n+ type microcrystalline silicon, etc., and the materials constituting a part of the photoelectric conversion matrix are selected from 1! Because it acts as an electrode, the solar cell process is simplified.
また、パターン状金属電極や屈折率１．７〜２．５の光
透過膜を組み合わせる事により、直列抵抗の低減や光反
射防止に効果があり、太ＢＩ電池の曲線因子や短絡電流
密度の改善が図られる。そして上記の高い開放電圧とあ
わせることにより一層の高効率化を達成することに効果
がある。In addition, by combining patterned metal electrodes and a light-transmitting film with a refractive index of 1.7 to 2.5, it is effective in reducing series resistance and preventing light reflection, improving the fill factor and short-circuit current density of thick BI batteries. is planned. When combined with the above-mentioned high open circuit voltage, it is effective in achieving even higher efficiency.
第１図は、ガラス板／ｐ”ｉｎ＋構造の太陽電池、第２
図は、ガラス板／ｐ”ｉｎ＋構造の太陽電池、第３図は
、ガラス板／ｐ”ｐｉｎｎ＋構造の太陽電池、第４図は
、ガラス板／パターン状金属電極／ｐ”ｉ ｎ＋構造の
太陽電池、第５図は、ガラス板／パターン状金属電極／
ｐ”ｉｎ”／パターン状金属電極構造の太陽電池、第６
図は、ガラス板／光透過膜／ｐ”ｉｎ＋構造の太陽電池
、第７図は、ガラス板／光透過膜／パターン状金属ｉ１
極／ ｐ ） ｚ ｎ ＋構造の太陽電池、第８図は、
くし形状金属電極を有する太陽電池である。
符号の説明
１・・・ガラス板、２・・・ｐ１型μｃ−３ｉＣ膜、３
−ｉ型ａ−３ｉ１１．４−ｎ＋型μｃ −Ｓ ｉ Ｃ膜
。
５ ・Ｐ型ａ−５ｉＣ膜、６− ｎ型ａ−８ｉＣ膜、７
・・・パターン状金属電極、８・・・パターン状金属電
極、９・・・光透過膜。
第７図
第２目
金釘を棒Figure 1 shows a solar cell with a glass plate/p”in+ structure;
The figure shows a solar cell with a glass plate/p"in+ structure, FIG. 3 shows a solar cell with a glass plate/p"pinn+ structure, and FIG. 4 shows a solar cell with a glass plate/patterned metal electrode/p"in+ structure. Battery, Figure 5 shows glass plate/patterned metal electrode/
Solar cell with p”in”/patterned metal electrode structure, No. 6
The figure shows a solar cell with a glass plate/light transmitting film/p”in+ structure, and Figure 7 shows a glass plate/light transmitting film/patterned metal i1
Polar/p) z n + structure solar cell, Figure 8 shows:
This is a solar cell with comb-shaped metal electrodes. Explanation of symbols 1...Glass plate, 2...P1 type μc-3iC film, 3
-i type a-3i11.4-n+ type μc -S i C film. 5 - P-type a-5iC film, 6- N-type a-8iC film, 7
... Patterned metal electrode, 8... Patterned metal electrode, 9... Light transmission film. Fig. 7 Second eye nail on stick
Claims (1)
、微結晶シリコン、微結晶シリコン合金等アモルファス
シリコン系材料の積層から成るアモルファスシリコン太
陽電池において、太陽電池に生成された光生成電流を外
部に取り出す際、光入射側に位置するｐ＾＋層膜または
ｎ＾＋層膜の少なくとも、一部分を利用し接合面に平行
に集電することを特徴とするアモルファスシリコン太陽
電池。 ２、特許請求の範囲第１項において、光入射側に位置す
るｐ＾＋層膜またはｎ＾＋層膜の光入射面上に、メッシ
ュ状やストライプ状等のパターン状金属電極が設けてあ
り、ｐ＾＋層膜またはｎ＾＋層膜の光入射側電極と金属
電極とで光生成電流の集電を行なわせることを特徴とす
るアモルファスシリコン太陽電池。 ３、特許請求の範囲第１項および、または第２項におい
て、太陽電池用基板としてガラス基板を用いた場合、ガ
ラス基板と光入射側電極との間、および、または、ガラ
ス基板と光入射側金属電極との間の少なくとも一部分に
屈折率１．７〜２．５の光透過膜を形成したことを特徴
とするアモルファスシリコン太陽電池。 ４、特許請求の範囲第１項から第３項において、光入射
側電極としてのｐ＾＋層膜またはｎ＾＋層膜が、微結晶
シリコンあるいは微結晶シリコン合金であることを特徴
とするアモルファスシリコン太陽電池。 ５、特許請求の範囲第１項において、ｐ＾＋層膜または
ｎ＾＋層膜の比抵抗が、１．５Ω・ｃｍ以下であること
を特徴とするアモルファスシリコン太陽電池。[Claims] 1. In an amorphous silicon solar cell consisting of a stack of amorphous silicon materials such as amorphous silicon, amorphous silicon alloy, microcrystalline silicon, and microcrystalline silicon alloy, the photogenerated current generated in the solar cell is transmitted to the outside. An amorphous silicon solar cell characterized in that when taken out, current is collected in parallel to a bonding surface using at least a part of the p^+ layer film or n^+ layer film located on the light incident side. 2. In claim 1, a metal electrode in a pattern such as a mesh shape or a stripe shape is provided on the light incidence surface of the p^+ layer film or the n^+ layer film located on the light incidence side. , an amorphous silicon solar cell characterized in that photogenerated current is collected by a light incident side electrode of a p^+ layer film or an n^+ layer film and a metal electrode. 3. In Claims 1 and/or 2, when a glass substrate is used as a solar cell substrate, between the glass substrate and the light incidence side electrode, and/or between the glass substrate and the light incidence side An amorphous silicon solar cell characterized in that a light transmitting film having a refractive index of 1.7 to 2.5 is formed at least in a portion between the metal electrode and the metal electrode. 4. In claims 1 to 3, an amorphous film characterized in that the p^+ layer film or n^+ layer film as the light incident side electrode is microcrystalline silicon or a microcrystalline silicon alloy. silicon solar cell. 5. The amorphous silicon solar cell according to claim 1, wherein the p^+ layer film or the n^+ layer film has a specific resistance of 1.5 Ω·cm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63318555A JPH02164079A (en) | 1988-12-19 | 1988-12-19 | Amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63318555A JPH02164079A (en) | 1988-12-19 | 1988-12-19 | Amorphous silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02164079A true JPH02164079A (en) | 1990-06-25 |
Family
ID=18100439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63318555A Pending JPH02164079A (en) | 1988-12-19 | 1988-12-19 | Amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02164079A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03157976A (en) * | 1989-11-15 | 1991-07-05 | Sanyo Electric Co Ltd | Photovoltaic device |
| JP2011205149A (en) * | 2003-03-24 | 2011-10-13 | Konarka Technologies Inc | Photovoltaic cell with mesh electrode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5651880A (en) * | 1979-10-04 | 1981-05-09 | Fuji Electric Co Ltd | Amorphous semiconductor photocell |
| JPS57204178A (en) * | 1981-06-10 | 1982-12-14 | Matsushita Electric Ind Co Ltd | Optoelectric transducer |
| JPS60102773A (en) * | 1983-11-09 | 1985-06-06 | Hitachi Ltd | Amorphous base solar battery |
| JPS62256481A (en) * | 1986-04-30 | 1987-11-09 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
| JPS62276884A (en) * | 1986-05-24 | 1987-12-01 | Sharp Corp | Thin film solar cell element |
-
1988
- 1988-12-19 JP JP63318555A patent/JPH02164079A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5651880A (en) * | 1979-10-04 | 1981-05-09 | Fuji Electric Co Ltd | Amorphous semiconductor photocell |
| JPS57204178A (en) * | 1981-06-10 | 1982-12-14 | Matsushita Electric Ind Co Ltd | Optoelectric transducer |
| JPS60102773A (en) * | 1983-11-09 | 1985-06-06 | Hitachi Ltd | Amorphous base solar battery |
| JPS62256481A (en) * | 1986-04-30 | 1987-11-09 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
| JPS62276884A (en) * | 1986-05-24 | 1987-12-01 | Sharp Corp | Thin film solar cell element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03157976A (en) * | 1989-11-15 | 1991-07-05 | Sanyo Electric Co Ltd | Photovoltaic device |
| JP2011205149A (en) * | 2003-03-24 | 2011-10-13 | Konarka Technologies Inc | Photovoltaic cell with mesh electrode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5762552B2 (en) | Photoelectric conversion device and manufacturing method thereof | |
| WO2005011002A1 (en) | Silicon based thin film solar cell | |
| JPS6091626A (en) | Method of producing amorphous silicon pin semiconductor device | |
| CN101295743A (en) | Thin film, its forming method and solar battery with the same | |
| JP3078936B2 (en) | Solar cell | |
| CN111384187A (en) | Composite back electrode, preparation method thereof and laminated solar cell | |
| JPH0595126A (en) | Thin film solar battery and manufacturing method thereof | |
| JPH0658971B2 (en) | Photovoltaic device manufacturing method | |
| JP2680579B2 (en) | Photovoltaic device | |
| JP3342257B2 (en) | Photovoltaic element | |
| JPH02164079A (en) | Amorphous silicon solar cell | |
| CN114582983A (en) | Heterojunction solar cell and preparation method thereof | |
| JPS58215083A (en) | Hetero-junction photoelectric element and device therefor | |
| JP2669834B2 (en) | Stacked photovoltaic device | |
| CN110797428A (en) | Heterojunction solar cell | |
| TW200536136A (en) | Method for producing thin-film photoelectric converter | |
| JPH0513790A (en) | Photoelectromotive force element | |
| JPH0456170A (en) | Manufacture of thin-film solar cell | |
| JP2010103347A (en) | Thin film photoelectric converter | |
| JPS6284571A (en) | Multilayer structure type amorphous solar cell | |
| JPS59151476A (en) | Photoelectric conversion element | |
| JPS5996775A (en) | Amorphous silicon photoelectric conversion device | |
| JPH10144942A (en) | Amorphous semiconductor solar cell | |
| JPH0597413A (en) | Amorphous multicomponent semiconductor and device using the same | |
| JPH11298021A (en) | Substrate for photovoltaic element, and photovoltaic element using the same, and integrated photovoltaic element and manufacture of the integrated photovoltaic element |