JPH02158100A - Plasma load resistance control apparatus - Google Patents
Plasma load resistance control apparatusInfo
- Publication number
- JPH02158100A JPH02158100A JP63310027A JP31002788A JPH02158100A JP H02158100 A JPH02158100 A JP H02158100A JP 63310027 A JP63310027 A JP 63310027A JP 31002788 A JP31002788 A JP 31002788A JP H02158100 A JPH02158100 A JP H02158100A
- Authority
- JP
- Japan
- Prior art keywords
- antenna
- bias voltage
- load resistance
- plasma
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005540 biological transmission Effects 0.000 claims abstract description 8
- 230000004927 fusion Effects 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 abstract description 2
- 230000004044 response Effects 0.000 abstract description 2
- 230000005686 electrostatic field Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 230000007704 transition Effects 0.000 description 10
- 230000007423 decrease Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Plasma Technology (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はトカマク型核融合装置に係り、特に、プラズマ
を高温に加熱するための高周波加熱装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a tokamak-type nuclear fusion device, and particularly to a high-frequency heating device for heating plasma to a high temperature.
近年の核融合研究の進展により５ トカマクプラズマを
加熱すればする程、プラズマの閉じ込め性能が劣化する
こと（Ｌモードスケーリングと呼ばれる。）が発見され
、成る一定の特殊な運転条件下では劣化していた閉じ込
め性能がステップ的に回復するような現象（Ｈモード遷
移と呼ばれる。）も存在し得ることがわかってきた。こ
のトエモード遷移は、将来の核融合炉実現には必須条件
と見なされ、一方、Ｈモードのための運転条件は微妙で
、−旦、遷移が起っても、定常的には続かず１００ｍ５
から１５の周期で、Ｌモードへの転落と■（モード遷移
をくり返す性質をもっている。Due to recent advances in nuclear fusion research, it has been discovered that the more a tokamak plasma is heated, the more the plasma confinement performance deteriorates (referred to as L-mode scaling). It has become clear that there may also be a phenomenon in which the confinement performance recovers in a stepwise manner (referred to as H-mode transition). This Toe mode transition is considered an essential condition for the realization of future fusion reactors, but on the other hand, the operating conditions for H mode are delicate, and even if the transition occurs, it will not continue steadily and will not continue for 100 m5.
It has the property of repeating a fall to L mode and a (mode transition) at a cycle of 15.
一方、トカマクプラズマへの追加熱の代表的手段として
ＩＣＲＦ（イオンサイクロイロン共鳴周波数）加熱法が
ある。これは５０ Ｍ Ｈｚ程度の高周波電力をループ
アンテンを通じてプラズマに供給する方法である。この
場合、一般に、電力をプラズマに無、駄なく送るには、
負荷の整合がとれている必要があり、通常、アンテナ近
傍に置かれたスタブチューナと呼ぶ整合器を用いる。On the other hand, ICRF (ion cyclotron resonance frequency) heating is a typical means of adding heat to tokamak plasma. This is a method in which high frequency power of about 50 MHz is supplied to the plasma through a loop antenna. In this case, in general, in order to send power to the plasma without waste,
The load must be matched, and a matching device called a stub tuner is usually used near the antenna.
この整合条件は、プラズマ負荷の状態がかわると容易に
破れてしまい、伝送電力が下る。ＬモードからＨモード
へ遷移すると、伝送電力が定格値から、約５０％出力に
急減してしまうというのが、問題であった。このプラズ
マ負荷が、ＬモードとＦＩモードとで大きく異なるのは
アンテナ前面のプラズマ密度が異なるためである。ｌ（
モード遷移時にアンテナ前面の密度が下り、プラズマ負
荷抵抗値が下って、負荷不整合を招き、伝送電力を急減
させる。この負荷不整合は、加熱効率の低下以外に、電
力用真空管の損傷、Ｈモード状態の不安定。This matching condition is easily broken when the state of the plasma load changes, and the transmitted power decreases. The problem was that when transitioning from L mode to H mode, the transmission power suddenly decreased from the rated value to about 50% output. The reason why this plasma load differs greatly between the L mode and the FI mode is because the plasma density in front of the antenna is different. l(
During mode transition, the density in front of the antenna decreases, and the plasma load resistance value decreases, causing load mismatch and causing a sudden decrease in transmitted power. This load mismatch causes not only a decrease in heating efficiency but also damage to the power vacuum tube and instability of the H-mode state.
プラズマ中への不純物の混入等の感作用を及ぼし。It causes sensitization effects such as impurities entering the plasma.
回避されるべきものであった。It should have been avoided.
この負荷の急変ごとにスタブチューナを再調整して整合
をとり直すという考えは、スタブチューナ操作が機械的
操作であるため、変化の特徴的時間１０ｍ５に追従する
のは不可能であり、現実的でない。The idea of readjusting the stub tuner and re-aligning it every time there is a sudden change in load is not realistic because the stub tuner operation is a mechanical operation, and it is impossible to follow the characteristic time of change of 10 m5. Not.
本発明の目的は、Ｈモード遷移時にも、負荷の急変を来
たさないような装置を提供することにある。An object of the present invention is to provide a device that does not cause sudden changes in load even when transitioning to H mode.
上記の目的を達成するために１本発明では、アンテナに
静電圧の可変バイアスをかけ、アンテナ前面の局所プラ
ズマ密度をフィードバック制御する。第２図に示すよう
に、アンテナＬが、プラズマ２に対して直流バイアス電
圧Ｖｂを持っていると、局所的な１％電場Ｅ、が形成さ
れ、それとトロイダル磁場Ｂ、とのＥＸＢドリフトによ
って、荷電粒子は、ポロイダル方向（Ｖ、方向）にドリ
フトを受け、アンテナ前面の局所的なプラズマ密度を下
げる働きをする。従って、Ｌモード時にはバイアスを深
くしておき、Ｈモード遷移時にはバイアスを少なくする
方向で制御すれば、Ｌモード。In order to achieve the above object, the present invention applies a variable electrostatic voltage bias to the antenna to feedback-control the local plasma density in front of the antenna. As shown in FIG. 2, when the antenna L has a DC bias voltage Vb with respect to the plasma 2, a local 1% electric field E is formed, and due to EXB drift between it and the toroidal magnetic field B, The charged particles undergo a drift in the poloidal direction (V, direction) and serve to lower the local plasma density in front of the antenna. Therefore, if you control the bias to be deep in the L mode and reduce the bias in the H mode transition, the L mode will be achieved.
Ｈモード時を通じて、アンテナ前面密度を、低目の一定
値に保持することができ、負荷抵抗の値を定値制御する
ことが出来る。Throughout the H mode, the antenna front density can be maintained at a constant low value, and the value of the load resistance can be controlled at a constant value.
このバイアス電圧に対するプラズマの応答は充分に速い
ので、以下に述へるようなフィードバック制御の方法を
とることにより、 Ｉ（モード遷移のような負荷急変に
、充分、追従することが出来る。Since the response of the plasma to this bias voltage is sufficiently fast, sudden changes in load such as I mode transition can be sufficiently followed by using the feedback control method described below.
以下、本発明を実施例を用いて説明する。 The present invention will be explained below using examples.
第１図は、本発明の第一実施例の構成を示す図である。FIG. 1 is a diagram showing the configuration of a first embodiment of the present invention.
アンテナ負荷抵抗の値Ｒは、伝送路途中に設置した方向
性結合器３で益進波Ｖｔ と反射波Ｖ、をモニタし、第
３図の負荷抵抗推定回路４で推定される。推定抵抗値Ｒ
と、目癲値Ｒｏとの差信号は、ＰＩ型ラフイードバック
補償回路５人力し、バイアス電圧指令値Ｖｃを出力する
。バイアス電圧発生口１６は、指令値に応じてＯ〜２０
０■の直流電圧Ｖｂを発生し、アンテナ導体に印加され
る。伝送線路上には、直流分はカットし、高周波分は導
通となるようなりＣカット７が設置され、また、アンテ
ナｌと真空容器部分８もセラミックスフィードスルー９
によって絶縁され、直流バイアスがアンテナのみにかか
るようになっている。The value R of the antenna load resistance is estimated by the load resistance estimating circuit 4 shown in FIG. 3 by monitoring the forward wave Vt and the reflected wave V by a directional coupler 3 installed in the middle of the transmission path. Estimated resistance value R
The difference signal between the current value Ro and the reference value Ro is input to a PI type rough feedback compensation circuit 5 and outputs a bias voltage command value Vc. The bias voltage generation port 16 has a voltage of 0 to 20 depending on the command value.
A DC voltage Vb of 0.0 cm is generated and applied to the antenna conductor. A C-cut 7 is installed on the transmission line to cut the DC component and conduct the high frequency component, and the antenna l and the vacuum vessel part 8 are also connected to a ceramic feedthrough 9.
is insulated so that DC bias is applied only to the antenna.
第３図は、負荷抵抗推定回路４である。反射波と前進波
をクリスタルマウントで検波して比の平方根をとると電
圧反射率Ｆが求まる。また、反射波Ｖ、と前進波Ｖｉ
との位相差を検出回路４２で検出し、これをφとすると
、これらＦ、φを入力として、図に示したような演算処
理によって、方結上の負荷抵抗Ｒ’ 、Ｘ’ を推定し
、さらに、伝送線路の公式に従ってアンテナ負荷抵抗値
Ｒを推定する。ここでＱは方結からアンテナまでの電気
量であり、βは位相定数である。FIG. 3 shows the load resistance estimation circuit 4. The reflected wave and the forward wave are detected with a crystal mount and the square root of the ratio is taken to find the voltage reflectance F. Also, the reflected wave V and the forward wave Vi
The detection circuit 42 detects the phase difference between the F and φ, and if this is φ, the load resistances R' and , Furthermore, the antenna load resistance value R is estimated according to the transmission line formula. Here, Q is the electrical quantity from the connection to the antenna, and β is the phase constant.
第４図は、本発明に使用するＩＣＲＦアンテナｌの一例
を示したものであり、ハツチングで示したセラミックブ
レーク９で１周りの真空容器８から絶縁している点と、
静電圧導入端子ｖ６を設けている点が通常のＩＣＲＦア
ンテナと異なる。FIG. 4 shows an example of an ICRF antenna 1 used in the present invention, in which it is insulated from the surrounding vacuum container 8 by a ceramic break 9 shown by hatching.
It differs from a normal ICRF antenna in that it has a static voltage introduction terminal v6.
第５図は、本発明の第二の実施例を示すものである。第
５図のフィードバック制御の思想は■１モード＋遷移し
たことを種々の検出手段５０を用いて検知して、制御情
報として積極的に活用しようというものである。可視分
光計測５１や、電磁計測５２を用いて、Ｈモード遷移を
検知し、検知信号５３を用いてあらかじめ一定のバイア
ス′市圧ＶＬ、を印加していたものを、別の一定電圧（
Ｌモード時のものより低い値）に切換える。すなわち、
この実施例は二値制御である。この方式のものは、既に
、トカマク装置には装備されている種々の計測情報を活
用し、第一の実施例よりもシンプルな制御系を構成でき
る。一定バイアスの設定値は経験的に定めればよい。FIG. 5 shows a second embodiment of the invention. The idea behind the feedback control shown in FIG. 5 is to detect (1) mode+transition using various detection means 50 and actively utilize it as control information. The H-mode transition is detected using the visible spectroscopic measurement 51 or the electromagnetic measurement 52, and the detection signal 53 is used to apply a constant bias 'city pressure VL' to another constant voltage (
(lower value than in L mode). That is,
This embodiment is a binary control. This method utilizes various measurement information already installed in the tokamak device, and can configure a simpler control system than the first embodiment. The set value of the constant bias may be determined empirically.
第６図は、本発明の第三の実施例を示す。これは、種々
計測情報を用いずに、第一の実施例よりもシンプルな制
御系を目指すものである。方向性結合器３はスタブチュ
ーナ９よリーヒ流側に設置し、反射波端子にクリスタル
マウント４１をつけて反射電力Ｐ、のみをモニタするも
のとする。第７図に示すように、Ｌモード運転時に、成
る一定のバイアス電圧のもとて負荷整合がとれるように
、スタブチューナ９で調整をとっておくものとすれば、
そのときの反射電力対バイアス電圧特性は、第７図の曲
線Ａのようになる。Ｈモード遷移時には。FIG. 6 shows a third embodiment of the invention. This aims at a simpler control system than the first embodiment without using various measurement information. The directional coupler 3 is installed on the Leahy flow side of the stub tuner 9, and a crystal mount 41 is attached to the reflected wave terminal to monitor only the reflected power P. As shown in FIG. 7, if adjustment is made with the stub tuner 9 so that load matching can be achieved under a constant bias voltage during L mode operation,
The reflected power vs. bias voltage characteristic at this time is as shown by curve A in FIG. When transitioning to H mode.
この曲線はＢのように移動するので、最急降下法アルゴ
リズムで新しい最適点Ｖ ｈ ２を探索すればよい。第
６図の制御回路５には、この様な最急降下アルゴリズム
が納めてあり、バイアス電圧■、を制御する。Since this curve moves like B, a new optimal point V h 2 can be searched for using the steepest descent algorithm. The control circuit 5 in FIG. 6 contains such a steepest descent algorithm, and controls the bias voltage (2).
本発明によれば、１−Ｉモード遷移等の原因でプラズマ
負荷が急変したときにも、負荷整合状態をくずすことな
く、定格パワーの高周波をプラズマに結合することがで
きる。According to the present invention, even when the plasma load suddenly changes due to a 1-I mode transition or the like, high frequency waves of rated power can be coupled to the plasma without disrupting the load matching state.
【図面の簡単な説明】
第１図は、本発明の一実施例の系統図、第２図は本発明
の原理図、第３図は第１図の負荷抵抗推定回路図、第４
図は本発明中のＩＣＲＦアンテナの断面図、第５図は本
発明の第二の実施例の系統図、第６図は本発明の第三の
実施例の系統図、第７図は本発明の第三の実施例の原理
図である。
１・・・アンテナ、２・・・プラズマ、３・・・方向性
結合器、４・・負荷抵抗検知手段、５・・・制御回路、
６・・直流バイアス電圧発生手段、７− Ｄ Ｃブレー
ク、８・・ゲ
ク
第
図
第２区
＠３図[Brief Description of the Drawings] Fig. 1 is a system diagram of an embodiment of the present invention, Fig. 2 is a principle diagram of the present invention, Fig. 3 is a load resistance estimation circuit diagram of Fig. 1, and Fig. 4 is a system diagram of an embodiment of the present invention.
The figure is a cross-sectional view of an ICRF antenna according to the present invention, FIG. 5 is a system diagram of a second embodiment of the present invention, FIG. 6 is a system diagram of a third embodiment of the present invention, and FIG. 7 is a system diagram of a third embodiment of the present invention. It is a principle diagram of the third example. DESCRIPTION OF SYMBOLS 1... Antenna, 2... Plasma, 3... Directional coupler, 4... Load resistance detection means, 5... Control circuit,
6. DC bias voltage generation means, 7-DC break, 8. Geku diagram 2nd section @ 3 diagram
Claims (1)
装置を備えたトカマク型核融合装置において、 そのアンテナのローディング抵抗の急変を検知する手段
と、前記アンテナに対して直流バイアス電圧を印加する
手段と、前記ローディング抵抗を一定に保つようにバイ
アス電圧を決定する制御手段とを設けたことを特徴とす
るプラズマ負荷抵抗制御装置。 ２、特許請求の範囲第１項において、 前記ローディング抵抗検知手段の、高周波伝送路上に置
かれた方向性結合器により、反射波と入射波の電力およ
び反射波・入射波間の位相を検知し、伝送線路理論によ
り導かれる公式により前記アンテナの負荷抵抗を演算す
る方式を採り、かつ前記制御手段で、演算された負荷抵
抗の目標値からの偏差を、比例積分演算によるフィード
バック動作によつてバイアス電圧を決定する方式を採つ
たことを特徴とするプラズマ負荷抵抗制御装置。 ３、特許請求の範囲第１項において、 通常のトカマク型核融合装置に具備されている計測器類
からの情報を用い、プラズマの閉じ込め状態が急変した
ことを検知する手段と、その急変に応じてあらかじめ定
めた一定電圧のバイアス電圧に切換える手段とを設けた
ことを特徴とするプラズマ負荷抵抗制御装置。 ４、特許請求の範囲第１項において、 伝送路線路上に設けた前記方向性結合器で、反射波電力
のみを検知し、前記反射波電力が最小となるようなバイ
アス電圧を探索する制御手段を設けたことを特徴とする
プラズマ負荷抵抗制御装置。[Claims] 1. In a tokamak-type nuclear fusion device equipped with a high-frequency heating device in the ion cyclotron resonance frequency band, means for detecting a sudden change in the loading resistance of the antenna, and applying a DC bias voltage to the antenna. A plasma load resistance control device comprising: means for controlling the load resistance; and control means for determining a bias voltage so as to keep the loading resistance constant. 2. In claim 1, the loading resistance detecting means detects the power of the reflected wave and the incident wave and the phase between the reflected wave and the incident wave by a directional coupler placed on the high frequency transmission path, A method is adopted in which the load resistance of the antenna is calculated using a formula derived from transmission line theory, and the deviation of the calculated load resistance from the target value is determined by the control means as a bias voltage by feedback operation using proportional integral calculation. 1. A plasma load resistance control device characterized by adopting a method for determining . 3. In claim 1, there is provided a means for detecting a sudden change in the plasma confinement state using information from measuring instruments included in a normal tokamak type nuclear fusion device, and a means for detecting a sudden change in the plasma confinement state, and responding to the sudden change. 1. A plasma load resistance control device comprising means for switching to a predetermined constant bias voltage. 4. Claim 1 provides a control means for detecting only the reflected wave power in the directional coupler provided on the transmission line and searching for a bias voltage that minimizes the reflected wave power. A plasma load resistance control device characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63310027A JPH02158100A (en) | 1988-12-09 | 1988-12-09 | Plasma load resistance control apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63310027A JPH02158100A (en) | 1988-12-09 | 1988-12-09 | Plasma load resistance control apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02158100A true JPH02158100A (en) | 1990-06-18 |
Family
ID=18000279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63310027A Pending JPH02158100A (en) | 1988-12-09 | 1988-12-09 | Plasma load resistance control apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02158100A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010500702A (en) * | 2006-09-13 | 2010-01-07 | ノーリツ鋼機株式会社 | Plasma generating apparatus and work processing apparatus using the same |
| CN103795661B (en) * | 2012-11-02 | 2017-06-16 | 瑞昱半导体股份有限公司 | Communicator and the estimating and measuring method being applied thereon |
-
1988
- 1988-12-09 JP JP63310027A patent/JPH02158100A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010500702A (en) * | 2006-09-13 | 2010-01-07 | ノーリツ鋼機株式会社 | Plasma generating apparatus and work processing apparatus using the same |
| US8128783B2 (en) | 2006-09-13 | 2012-03-06 | Amarante Technologies, Inc. | Plasma generator and work processing apparatus provided with the same |
| CN103795661B (en) * | 2012-11-02 | 2017-06-16 | 瑞昱半导体股份有限公司 | Communicator and the estimating and measuring method being applied thereon |
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