JPH02156086A - Laser cvd device - Google Patents
Laser cvd deviceInfo
- Publication number
- JPH02156086A JPH02156086A JP31107488A JP31107488A JPH02156086A JP H02156086 A JPH02156086 A JP H02156086A JP 31107488 A JP31107488 A JP 31107488A JP 31107488 A JP31107488 A JP 31107488A JP H02156086 A JPH02156086 A JP H02156086A
- Authority
- JP
- Japan
- Prior art keywords
- cylinder
- substrate
- gas
- laser
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000002994 raw material Substances 0.000 claims abstract description 12
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 238000001182 laser chemical vapour deposition Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 abstract 3
- 239000010408 film Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分舒
本発明は、レーザビーム照射部分のみに所望の膜を成膜
する直接描画可能なレーザＣＶ Ｄ （ＣＨＥＭ−ＩＣ
ＡＬ ＶＡＰＯＲＤＥＰＯ５ＩＴＩＯＮ ：気相成長）
装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Industrial Application The present invention is directed to a direct writing laser CVD (CHEM-IC
AL VAPORDEPO5ITION: Vapor phase growth)
It is related to the device.
従来の技術
レーザＣｖＤは、ガス分解、薄膜作成にかかわる必要な
エネルギーを光によって提供するものであり、光照射部
分のみの成膜が可能であることから部分的な選択成膜法
として、また低温成膜法として注目されている。現状で
は、選択成膜法の特徴を活かし、直接描画技術により、
マスクの白欠陥を修正するマスクリペア装置として応用
がなされているが、将来的には、導体、誘電体、半導体
等デバイス上の素子を直接修正可能な総合的なりペア装
置として使用されていくものと期待されている。Conventional laser CvD technology uses light to provide the necessary energy for gas decomposition and thin film creation, and because it is possible to form a film only on the light irradiated area, it is used as a selective film formation method in parts and also at low temperatures. It is attracting attention as a film formation method. Currently, by taking advantage of the characteristics of the selective film deposition method and using direct writing technology,
It has been applied as a mask repair device to repair white defects on masks, but in the future it will be used as a comprehensive pairing device that can directly repair elements on devices such as conductors, dielectrics, and semiconductors. It is expected that
一般にレーザＣＶＤシステムでは、レーザビームの光軸
が固定されており、必要な成膜箇所の調節は、２次元に
移動可能な基板架台の稼働によっておこなわれている０
反応チャンバーは基板、および基板ステージを内包して
おり、基板の移動に対し十分な大きさを持つ必要があっ
た。Generally, in a laser CVD system, the optical axis of the laser beam is fixed, and the necessary adjustment of the deposition location is performed by operating a two-dimensionally movable substrate stand.
The reaction chamber contains the substrate and the substrate stage, and needs to be large enough to accommodate movement of the substrate.
発明が解決しようとする課題
今後リペアを必要とする基板形状は多様化するとともに
、大型化することはさけられない。例えば、液晶デイス
プレィ等は、Ａ４サイズから巾１ｍサイズの大型化は時
間の問題であるが、さらに１００％の歩留りが常に要求
されており、デイスプレィ作成プロセスにはレーザＣＶ
Ｄを用いたリペア技術が必要不可欠なことと予想されて
いる。Problems to be Solved by the Invention In the future, the shapes of substrates that require repair will become more diverse, and it is inevitable that they will become larger. For example, it is only a matter of time for liquid crystal displays to increase in size from A4 size to 1 meter wide, but 100% yield is always required, and the display production process requires laser CV.
It is expected that repair technology using D will be essential.
即ち、このようにリペア対象基板が大型化されてくると
、反応チャンバーが大型化し、反応プロセスの効率が悪
くなるばかりか、システムの高額化がさけられないもの
となる。That is, as the substrate to be repaired becomes larger in size, the reaction chamber becomes larger, which not only reduces the efficiency of the reaction process but also inevitably increases the cost of the system.
課題を解決するための手段
上記課題を解決するために本発明のレーザＣＶＤ装置は
、二次元的に移動可能な架台に装着された基板、基板に
垂直に上方より照射されるレーザビーム、及びレーザビ
ームと同軸状に設けられたガス供給排気システムより構
成している。またさらに、ガス供給排気システムは、原
料ガスの供給排気を、レーザビーム照射部のみに限定し
ており、周辺への反応ガスの拡散、もれをなくしている
。Means for Solving the Problems In order to solve the above problems, the laser CVD apparatus of the present invention includes a substrate mounted on a two-dimensionally movable stand, a laser beam irradiated perpendicularly to the substrate from above, and a laser beam. It consists of a gas supply and exhaust system installed coaxially with the beam. Furthermore, the gas supply and exhaust system limits the supply and exhaust of the raw material gas only to the laser beam irradiation section, thereby eliminating diffusion and leakage of the reaction gas to the surrounding area.
作用
本発明は上記した構成によって、通常の密封チャンバー
を用いる必要がないため、極めてコンパクトな構成であ
とる同時に、基板形状に対する適用範囲の広いレーザＣ
ＶＤ装置を提供できる。Function: Due to the above-described configuration, the present invention does not require the use of a normal sealed chamber, so it has an extremely compact configuration, and at the same time, the laser C can be applied to a wide range of substrate shapes.
We can provide VD equipment.
実施例
以下本発明の一実施例のレーザＣＶＤ装置について、図
面を参照しながら説明する。EXAMPLE Hereinafter, a laser CVD apparatus according to an example of the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例におけるレーザＣＶＤ装
置の構成を示すものである。第１図において、１はレー
ザ光源、２はレーザビーム、３はミラー、４はガス供給
排気システム、５は基板、６は基板架台、７は排気、８
．９は原料ガス、１０は不活性ガスである。第２図はガ
ス供給排気システムの断面図を示したものである０以上
第１図。FIG. 1 shows the configuration of a laser CVD apparatus in a first embodiment of the present invention. In FIG. 1, 1 is a laser light source, 2 is a laser beam, 3 is a mirror, 4 is a gas supply and exhaust system, 5 is a substrate, 6 is a substrate stand, 7 is an exhaust gas, 8
．． 9 is a raw material gas, and 10 is an inert gas. FIG. 2 is a sectional view of the gas supply and exhaust system; FIG.
第２図を用いて、液晶デイスプレィ等に使用されている
透明電極ＳｎＯ□についてのレーザＣＶＤ法の例を説明
する。原料ガス８．９は錫原料としてはテトラメチルス
ズ、酸素源としてはｏ２または、オゾンガスを数％含む
０□ガスを用いる。レーザ１は、ＹＡＧの第４高調波２
６６ ｎｍを使用する。テトラメチルスズ、およびオゾ
ンガスは、２６６ ｎｍの光を吸収し分解、基板上にＳ
ｎＯ□膜を形成する。まず、修正したい電極欠陥部をレ
ーザビーム照射部に移動する。この調整は、基板架台６
の２次元稼働によって行う、レーザビーム２は、反射ミ
ラー３により基板面に垂直方向に進行方向を変えた後、
集光レンズ１１により集光され基板上の必要箇所を照射
する。ガス供給排気システム４は、第２図に見られるよ
うに４重構造の円筒より成り立っており、中心の第１の
円筒内はレーザビームが通過するとともに、上部よりレ
ンズ内壁に吹き付ける形で不活性ガスｌ０Ｎ２を供給し
ている。原料ガス８．９は第１の円筒１２の周辺に設け
られた第２の円筒１３下部より基板面上のレーザ照射部
に噴出されている。尚、オゾンガスを使用する際は、錫
原料ガスとの反応性が非常に高くパーティクルを発生さ
せ易いため、ガスの噴出口手前まで円筒内部で壁をもち
いてそれぞれ独立に供給し、基板面上のレーザ照射部で
合流させる。排気は、第２の円筒１３とその周囲に設け
られた第３の円筒１４間より強制的に吸気する。An example of a laser CVD method for a transparent electrode SnO□ used in liquid crystal displays and the like will be explained with reference to FIG. For the raw material gas 8.9, tetramethyltin is used as a tin raw material, and O2 or 0□ gas containing several percent ozone gas is used as an oxygen source. Laser 1 emits the fourth harmonic of YAG 2
66 nm is used. Tetramethyltin and ozone gas absorb 266 nm light and decompose, leaving S on the substrate.
Form an nO□ film. First, the electrode defect to be corrected is moved to the laser beam irradiation section. This adjustment is performed using the board mount 6.
The laser beam 2 is changed in direction perpendicular to the substrate surface by a reflection mirror 3, and then
The light is condensed by a condenser lens 11 and irradiates a necessary location on the substrate. As shown in Figure 2, the gas supply and exhaust system 4 consists of a cylinder with a four-layered structure, and the laser beam passes through the first cylinder in the center, while the inert gas is sprayed from the top onto the inner wall of the lens. Gas 10N2 is supplied. The raw material gas 8.9 is ejected from the lower part of the second cylinder 13 provided around the first cylinder 12 to the laser irradiation part on the substrate surface. When using ozone gas, it is highly reactive with the tin raw material gas and easily generates particles. They are merged at the laser irradiation part. Exhaust air is forcibly taken in between the second cylinder 13 and the third cylinder 14 provided around it.
さらに反応ガスの周辺へのリム散を完全に遮断する目的
で第３の円筒１４とその外部に設けられた第４の円筒１
５間から基板面に垂直に不活性ガスＮ２をカーテン状に
吹き付ける。第２図中の矢印は、それぞれのガスの流れ
を示している。尚、第２図においても認められるように
、第４の円筒裾が、最も基板面すれすれに近接している
のが外部への原料ガス遮断効果のためには望ましい。Further, a third cylinder 14 and a fourth cylinder 1 provided outside the third cylinder 14 are provided for the purpose of completely blocking the reaction gas from being dispersed around the rim.
Inert gas N2 is sprayed in a curtain shape from between 5 and 5 perpendicularly to the substrate surface. The arrows in FIG. 2 indicate the respective gas flows. As can be seen in FIG. 2, it is desirable for the fourth cylindrical hem to be closest to the surface of the substrate for the purpose of blocking the raw material gas to the outside.
以上のように本実施例によれば、反応ガスの供給排気が
レーザ照射部のみに限定されており、大型の密閉チャン
バーを必要とすることもなく、極めて簡易なシステムで
レーザＣＶＤを行うことができ、基板のサイズ、形状に
たいしても臨機応変に広い対応が可能である。As described above, according to this embodiment, the supply and exhaust of the reaction gas is limited to only the laser irradiation section, and there is no need for a large sealed chamber, making it possible to perform laser CVD with an extremely simple system. It is possible to respond flexibly to the size and shape of the substrate.
発明の効果
以上のように本発明のレーザＣＶＤ装置は、二次元的に
移動可能な架台に装着された基板、基板に垂直に上方よ
り照射されるレーザビーム、及びレーザビームと同軸状
に設けられたガス供給排気システムより構成している。Effects of the Invention As described above, the laser CVD apparatus of the present invention includes a substrate mounted on a two-dimensionally movable stand, a laser beam irradiated perpendicularly to the substrate from above, and a laser CVD apparatus provided coaxially with the laser beam. It consists of a gas supply and exhaust system.
またさらに、ガス供給排気システムは、原料ガスの供給
排気を、レーザビーム照射部のみに限定しており、周辺
への反応ガスの拡散、もれをなくしている、よって、通
常の密封チャンバーを用いる必要がないため、極めてコ
ンパクトな構成であると同時に、基板形状に対する適用
範囲の広いレーザＣＶＤ装置を提供できる。Furthermore, the gas supply and exhaust system limits the supply and exhaust of raw material gas to only the laser beam irradiation section, eliminating diffusion and leakage of reaction gas to the surrounding area.Therefore, a normal sealed chamber is used. Since this is not necessary, it is possible to provide a laser CVD apparatus that has an extremely compact configuration and can be applied to a wide range of substrate shapes.
第１図は本発明の一実施例におけるレーザＣＶＤの構成
図、第２図はガス供給排気システムの断面図である。
１・・・・・・レーザ、４・・・・・・ガス供給排気シ
ステム。
代理人の氏名 弁理士 粟野重孝 はか１名２、−し−
サ１ビー４
ター基灰
ｇ−−一基靭賀ひ
８−源、料がχα
９−源特がχｂ
１０−−一不５古４生ｆズ
１５−−７２すＰＩ？ｉＩ
＋４−７フ＾Ｆ１間FIG. 1 is a configuration diagram of laser CVD according to an embodiment of the present invention, and FIG. 2 is a sectional view of a gas supply and exhaust system. 1... Laser, 4... Gas supply exhaust system. Name of agent: Patent attorney Shigetaka Awano Haka 1 person 2, -shi-
Sa 1 Bee 4 Tar base gray g--Ichiki Utsugahi 8- Source, material is χα 9- Source is χb 10--Ichifu 5 Old 4 student fs 15--72 PI? iI between +4-7F^F1
Claims (3)
前記基板に垂直に上方より照射されるレーザビーム、及
びレーザビームと同軸状に設けられたガス供給排気シス
テムとより構成されており、基板、および基板架台を包
含した密閉チャンバーを必要としないレーザＣＶＤ装置
。(1) A board mounted on a two-dimensionally movable stand;
Laser CVD is composed of a laser beam that is irradiated from above perpendicularly to the substrate, and a gas supply and exhaust system that is provided coaxially with the laser beam, and does not require a sealed chamber that includes the substrate and substrate stand. Device.
を囲うように取り付けられた円筒状の装置であり、内側
より第１〜第４の四重構造になっており、中央の第１の
円筒内はレーザビームが進行するとともに、不活性ガス
を上部より供給し、前記中央の第１の円筒と第２の円筒
間からはレーザの照射スポットのみに極小的に原料ガス
が供給され、さらに、成膜に使用されなかった原料ガス
および、前記不活性ガスはいずれも第２の円筒と第３の
円筒間からの強制的な吸気により外部へ排気され、一方
、第３、第４の円筒間から不活性ガスを基板面に垂直下
方にカーテン状に供給する機構を備えることを特徴とす
る請求項（１）記載のレーザＣＶＤ装置。(2) The gas supply exhaust system is a cylindrical device installed so as to surround the traveling path of the laser beam, and has a four-layer structure with first to fourth layers from the inside, with the first cylinder in the center As the laser beam advances inside, an inert gas is supplied from above, and a source gas is supplied in a very small amount from between the first cylinder and the second cylinder in the center only to the laser irradiation spot, and further, The raw material gas not used for film formation and the inert gas are both exhausted to the outside by forced intake from between the second cylinder and the third cylinder, while the gas between the third and fourth cylinders is 2. The laser CVD apparatus according to claim 1, further comprising a mechanism for supplying inert gas vertically downward to the substrate surface in a curtain shape.
おり、原料ガスの噴出口直前まで原料ガスごとに独立に
供給され、レーザ照射スポット部でガスの合流がなされ
る機構を備えた請求項（１）記載のレーザＣＶＤ装置。(3) The raw material gas supply port is completely separated into multiple parts internally, and has a mechanism in which each raw gas is supplied independently up to just before the raw material gas ejection port, and the gases are merged at the laser irradiation spot. A laser CVD apparatus according to claim (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31107488A JPH02156086A (en) | 1988-12-08 | 1988-12-08 | Laser cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31107488A JPH02156086A (en) | 1988-12-08 | 1988-12-08 | Laser cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02156086A true JPH02156086A (en) | 1990-06-15 |
Family
ID=18012803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31107488A Pending JPH02156086A (en) | 1988-12-08 | 1988-12-08 | Laser cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02156086A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003100717A (en) * | 2001-09-21 | 2003-04-04 | Tokyo Electron Ltd | Plasma treatment apparatus |
| JP2007317700A (en) * | 2006-05-23 | 2007-12-06 | Sekisui Chem Co Ltd | Surface-treating apparatus and surface treatment method |
| US11486039B2 (en) * | 2020-05-18 | 2022-11-01 | Ohio State Innovation Foundation | Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof |
| US11846024B2 (en) | 2021-03-15 | 2023-12-19 | Ohio State Innovation Foundation | Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation |
-
1988
- 1988-12-08 JP JP31107488A patent/JPH02156086A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003100717A (en) * | 2001-09-21 | 2003-04-04 | Tokyo Electron Ltd | Plasma treatment apparatus |
| JP2007317700A (en) * | 2006-05-23 | 2007-12-06 | Sekisui Chem Co Ltd | Surface-treating apparatus and surface treatment method |
| US11486039B2 (en) * | 2020-05-18 | 2022-11-01 | Ohio State Innovation Foundation | Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof |
| US11846024B2 (en) | 2021-03-15 | 2023-12-19 | Ohio State Innovation Foundation | Laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation |
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