JPH02156085A - Method and device for transporting raw liquid material - Google Patents
Method and device for transporting raw liquid materialInfo
- Publication number
- JPH02156085A JPH02156085A JP63310609A JP31060988A JPH02156085A JP H02156085 A JPH02156085 A JP H02156085A JP 63310609 A JP63310609 A JP 63310609A JP 31060988 A JP31060988 A JP 31060988A JP H02156085 A JPH02156085 A JP H02156085A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- gas
- liquid
- liquid raw
- transported
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000011344 liquid material Substances 0.000 title 1
- 239000002994 raw material Substances 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 55
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 29
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
Landscapes
- Chemical & Material Sciences (AREA)
- Reciprocating Pumps (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、化学的気相成長法（以下ＣＶＤ法という）に
おいて用いられる液体原料を輸送する方法とその装置に
関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method and an apparatus for transporting liquid raw materials used in chemical vapor deposition (hereinafter referred to as CVD).
（従来の技術）
ＣＶＤ法はｓｉと構成する元素からなる一種または二種
以上の化合物気体を基板表面に送り、基板表面上で化学
反応させて所望の薄膜を形成する方法である。(Prior Art) The CVD method is a method in which one or more compound gases consisting of Si and constituent elements are sent to the surface of a substrate, and a desired thin film is formed by causing a chemical reaction on the surface of the substrate.
従来から３ｉテクノロジーにおけるＣＶＤプロセスでは
、３ ｉ Ｈ４系の気体原料が用いられてきた。また、
ドーパントソースとしてＰＨ・３．８２８６等の気体原
料が用いられてきた。Conventionally, 3i H4-based gaseous raw materials have been used in the CVD process in 3i technology. Also,
Gaseous raw materials such as PH.3.8286 have been used as dopant sources.
しかし、集積回路に使用されるパターン寸法は回路パタ
ーンの高密度化と共に年々微細化の一途をたどり、今や
サブミクロンの時代に入っているが、気体原料を用いる
ＣＶＤプロセスでは次のような問題点が起った。However, the pattern dimensions used in integrated circuits are becoming increasingly finer year by year as the density of circuit patterns increases, and we have now entered the submicron era.However, the CVD process using gaseous raw materials has the following problems. happened.
３ｉ）ｉ４系の気体原料を用いるＣＶＤプロセスでは基
板上の段差や凹凸を平坦化できない。3i) A CVD process using an i4-based gas source cannot flatten steps or unevenness on a substrate.
また、このＣＶＤプロセスでは狭い電極間やゲートのト
レンチにボイドを形成し著しく膜特性を悪化させる。Further, in this CVD process, voids are formed in narrow gaps between electrodes and in gate trenches, significantly degrading film characteristics.
さらに、ＳｉＨ４は自己発火性で極めて危険な原料であ
る。Furthermore, SiH4 is a self-igniting and extremely dangerous raw material.
以上のような欠点を克服するためにテトラエトキシシラ
ンｓ ｒ （ＯＣ２Ｈ５＞ｔｔ系の液体原料、ドーパン
トソースとしてトリメトキシボロンＢ （Ｃ）ＣＨ３）
３系、リン酸トリメチルＰＯ（ＯＣＨ３’）３系のよう
な液体原料がＣＶＤプロセスで実用化され使用されるよ
うになってきている。To overcome the above drawbacks, tetraethoxysilane sr (OC2H5>tt liquid raw material, trimethoxyboron B (C)CH3 as a dopant source)
Liquid raw materials such as trimethyl phosphate PO(OCH3')3 series and trimethyl phosphate PO(OCH3')3 series have come to be put to practical use in CVD processes.
このような原料は目的の場所まで配管中を輸送しなけれ
ばならない。Such raw materials must be transported through piping to their destination.
気体原料を輸送する場合はそれ程問題は生じないが、液
体原料を輸送する場合は種々な問題点が発生する。Although there are not many problems when transporting gaseous raw materials, various problems occur when transporting liquid raw materials.
今日の液体原料の一般的な輸送方法は、液体原料を気密
なステンレスのような容器に入れ、その容器の中にアル
ゴン、ヘリウム、窒素等のガスを流し込みその液面を加
圧することによって液体原料を配管中に押し出す方法で
輸送することが多い。The common method for transporting liquid raw materials today is to put the liquid raw materials into an airtight container such as stainless steel, and then pour gas such as argon, helium, nitrogen, etc. into the container to pressurize the liquid surface. is often transported by extruding it into piping.
しかし、この−船釣な方法では液体原料の液面から加圧
気体が溶は込む欠点がある。However, this boat fishing method has the disadvantage that pressurized gas dissolves from the surface of the liquid raw material.
この溶存気体は液体原料の正確な輸送量の制御に障害を
与える。This dissolved gas impedes accurate control of the amount of liquid feedstock transported.
また、二種以上の混合液体原料を輸送する場合液体の種
類によって気体の溶存量が異なるため混合液体原料の組
成比が不正確になる欠点がある。Furthermore, when two or more types of mixed liquid raw materials are transported, there is a drawback that the composition ratio of the mixed liquid raw materials becomes inaccurate because the dissolved amount of gas differs depending on the type of liquid.
（解決しようとする問題点）
本発明は、上記の欠点を除去し、気体が溶存しない液体
原料を輸送する輸送方法とその方法を実施するための装
置を提供しようとするものである。(Problems to be Solved) The present invention aims to eliminate the above-mentioned drawbacks and provide a transportation method for transporting a liquid raw material in which no gas is dissolved, and an apparatus for carrying out the method.
（問題を解決するための手段）
本発明は、輸送する液体原料と輸送するための加圧ガス
を直接に接触させないで間接的に加圧することによって
加圧気体の溶存や吸収を防止しようとするものである。(Means for Solving the Problem) The present invention attempts to prevent dissolution and absorption of the pressurized gas by indirectly pressurizing the liquid raw material to be transported and the pressurized gas for transport without bringing them into direct contact. It is something.
以下、本発明を第１図にしたがって詳細に説明する。The present invention will be explained in detail below with reference to FIG.
バネ性金属の筒２（以下ベローズという）に圧力板３を
固定したものを密閉容器１にとりつける。A pressure plate 3 fixed to a spring metal cylinder 2 (hereinafter referred to as bellows) is attached to a closed container 1.
液体原料貯蔵室Ａは気密性が保持されている。The liquid raw material storage chamber A is kept airtight.
液体原料貯蔵室には液体の流入管４と流出管５が付属し
、密閉容器１にはガス流出入管６が付属している。The liquid raw material storage chamber is provided with a liquid inflow pipe 4 and a liquid outflow pipe 5, and the closed container 1 is provided with a gas inflow and outflow pipe 6.
この装置の操作は、液体原料貯蔵室Ａを真空ポンプを用
いて真空にしたのち、流量コントロールバルブ７．８を
閉じる。In operation of this device, the liquid raw material storage chamber A is evacuated using a vacuum pump, and then the flow rate control valve 7.8 is closed.
つぎに、液体流入管４に付属するバルブ７を開くと圧力
差によって液体原料貯蔵室Ａの中に液体原料が徐々に流
入する。流入し終ったらバルブ７を閉じることによって
液体原料を貯蔵することができる。Next, when the valve 7 attached to the liquid inflow pipe 4 is opened, the liquid raw material gradually flows into the liquid raw material storage chamber A due to the pressure difference. When the flow has finished, the liquid raw material can be stored by closing the valve 7.
液体原料を輸送する場合は、バルブ８を開きガス流出入
管６からガスを密閉容器内に流入させ圧力板３を加圧す
ると圧力板は徐々に密閉容器内を下降し、液体流出管５
から液体原料を輸送管に押し出し輸送することができる
。When transporting liquid raw materials, open the valve 8 and let gas flow into the sealed container from the gas inflow/outflow pipe 6 and pressurize the pressure plate 3. The pressure plate gradually descends inside the sealed container, and the liquid outflow pipe 5
The liquid raw material can be extruded into the transport pipe and transported.
圧力板３は密閉容器１の内壁に密着して上下する。The pressure plate 3 moves up and down in close contact with the inner wall of the closed container 1.
液体の輸送量は加圧ガスの圧力と流量コントロールバル
ブの作動によって正確に制御することができる。The amount of liquid transported can be precisely controlled by the pressure of the pressurized gas and the operation of the flow control valve.
液体原料の流出が終ったら加圧ガスをガス流出入管６か
ら排気するとベローズのバネ性によって圧力板は元の位
置に戻る。When the liquid raw material has finished flowing out, the pressurized gas is exhausted from the gas inflow/outflow pipe 6, and the pressure plate returns to its original position due to the springiness of the bellows.
加圧ガスの種類は問わないが、危険性がなく安価なガス
が好ましい。The type of pressurized gas does not matter, but a non-hazardous and inexpensive gas is preferred.
装置の材質は使用する液体原料の物性によって定められ
るが、テトラエトキシシラン、トリメトキシボロン、リ
ン酸トリメチル等の腐食性の液体の場合はステンレスが
好ましい。The material of the device is determined by the physical properties of the liquid raw material used, but stainless steel is preferable in the case of corrosive liquids such as tetraethoxysilane, trimethoxyboron, and trimethyl phosphate.
また、液体原料貯蔵室の内壁、特にベローズの内壁は装
置使用前にクリーン処理をしておく必要がある。Furthermore, the inner wall of the liquid raw material storage chamber, especially the inner wall of the bellows, must be cleaned before use of the apparatus.
本発明になる装置は、ＣＶＤ法において用いられる液体
原料以外に水分や気体を吸い込み易いアルコール類や液
体の輸送上発泡が問題になるスピンコード用液体等、高
度に純化もしくはろ過した液体の貯蔵保存およびその輸
送にも用いることができる。The device of the present invention is capable of storing and preserving highly purified or filtered liquids, such as alcohols that easily absorb moisture and gases in addition to liquid raw materials used in the CVD method, and liquids for spin cords where foaming is a problem when transporting liquids. It can also be used for transportation.
（発明の効果）
本発明によれば、液体原料の液面と加圧気体が非接触で
あり、ガスによる圧力板への加圧によつ４゜
て液体原料が輸送されるため、加圧気体が液体原料中に
溶は込むようなことはない特徴がある。(Effects of the Invention) According to the present invention, the liquid surface of the liquid raw material and the pressurized gas are not in contact with each other, and the liquid raw material is transported at a 4° angle by pressurizing the pressure plate with the gas. It has the characteristic that gas does not dissolve into the liquid raw material.
また、加圧ガスと流量コントロールバルブの作動によっ
て、液体原料の輸送量の正確な制御ができる特徴がある
。Another feature is that the amount of liquid raw material transported can be accurately controlled by operating pressurized gas and a flow rate control valve.
さらに、二種以上の混合液体原料を輸送する場合、溶存
気体がないためその組成比が変化せず正確である特徴が
ある。Furthermore, when transporting a mixed liquid raw material of two or more types, there is no dissolved gas, so the composition ratio does not change and is accurate.
また、従来の輸送方法においては、加圧ガスは液体原料
の液面と直接に接触するためアルゴン、ヘリウム等の反
応性に乏しい不活性ガスしか使用できず加圧ガスのコス
トが高いが、本発明によれば、どのようなガスでも使用
できるため安価で安全なガスを選択することによって加
圧ガスのコストを下げることができる利点がある。In addition, in conventional transportation methods, pressurized gas comes into direct contact with the liquid surface of the liquid raw material, so only inert gases with poor reactivity such as argon and helium can be used, and the cost of pressurized gas is high. According to the invention, since any gas can be used, there is an advantage that the cost of pressurized gas can be reduced by selecting an inexpensive and safe gas.
第１図は本発明になる液体原料輸送装置の一実施例の断
面図である。
図において、１は密閉容器、２はバネ性金属筒（ベロー
ズ）、３は圧力板、４は液体流入管、５は液体流出管、
６はガス流出入管、７．８は流量コントロールバルブ、
Ａは液体原料貯蔵至である。FIG. 1 is a sectional view of an embodiment of a liquid raw material transport device according to the present invention. In the figure, 1 is a closed container, 2 is a spring metal cylinder (bellows), 3 is a pressure plate, 4 is a liquid inflow pipe, 5 is a liquid outflow pipe,
6 is a gas inflow and outflow pipe, 7.8 is a flow rate control valve,
A is for liquid raw material storage.
Claims (2)
て、圧力差によりバネ性金属を伸縮させることによつて
当該液体原料を輸送することを特徴とする液体原料の輸
送方法。(1) A method for transporting a liquid raw material in a chemical vapor deposition method using a liquid as a raw material, characterized in that the liquid raw material is transported by expanding and contracting a springy metal due to a pressure difference.
な液体原料貯蔵室を設け、圧力板上のガス圧の変化によ
って圧力板を上下させ、当該貯蔵室に液体原料を貯蔵し
たり、貯蔵した液体を輸送管中に押し出したりして液体
を輸送することを特徴とする液体原料の輸送装置。(2) An airtight liquid raw material storage chamber consisting of a spring metal cylinder and a pressure plate is provided in the airtight container, and the pressure plate is raised and lowered by changes in the gas pressure on the pressure plate to store the liquid raw material in the storage chamber. A liquid raw material transport device characterized in that the liquid is transported by pushing the stored liquid into a transport pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63310609A JPH02156085A (en) | 1988-12-08 | 1988-12-08 | Method and device for transporting raw liquid material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63310609A JPH02156085A (en) | 1988-12-08 | 1988-12-08 | Method and device for transporting raw liquid material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02156085A true JPH02156085A (en) | 1990-06-15 |
Family
ID=18007319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63310609A Pending JPH02156085A (en) | 1988-12-08 | 1988-12-08 | Method and device for transporting raw liquid material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02156085A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1021588A1 (en) * | 1997-07-14 | 2000-07-26 | Advanced Technology Materials, Inc. | Fluid delivery apparatus and method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62233485A (en) * | 1986-03-31 | 1987-10-13 | Kurabo Ind Ltd | Driving device for bellows pump |
-
1988
- 1988-12-08 JP JP63310609A patent/JPH02156085A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62233485A (en) * | 1986-03-31 | 1987-10-13 | Kurabo Ind Ltd | Driving device for bellows pump |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1021588A1 (en) * | 1997-07-14 | 2000-07-26 | Advanced Technology Materials, Inc. | Fluid delivery apparatus and method |
| EP1021588A4 (en) * | 1997-07-14 | 2002-11-06 | Advanced Tech Materials | Fluid delivery apparatus and method |
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