JPH0215546A - Electron beam pattern defect survey instrument - Google Patents
Electron beam pattern defect survey instrumentInfo
- Publication number
- JPH0215546A JPH0215546A JP16560888A JP16560888A JPH0215546A JP H0215546 A JPH0215546 A JP H0215546A JP 16560888 A JP16560888 A JP 16560888A JP 16560888 A JP16560888 A JP 16560888A JP H0215546 A JPH0215546 A JP H0215546A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electron beam
- ion
- survey
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 25
- 230000007547 defect Effects 0.000 title claims abstract description 21
- 150000002500 ions Chemical class 0.000 claims description 18
- 238000007689 inspection Methods 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 7
- 230000001133 acceleration Effects 0.000 claims description 6
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 abstract description 7
- 239000000523 sample Substances 0.000 abstract 7
- 230000003068 static effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 241000287462 Phalacrocorax carbo Species 0.000 description 1
- 230000037213 diet Effects 0.000 description 1
- 235000005911 diet Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野」
この発明は、集束電子ビームによる、微細パターンの欠
陥検査装置に関するものであシ、特ＫＸ線マスク等の薄
膜構造の試料を検査する装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to an apparatus for inspecting defects in fine patterns using a focused electron beam, and relates to an apparatus for inspecting samples with thin film structures such as special KX-ray masks. It is something.
〔従来の技術Ｊ
第２図は例えば、特開昭６１−２００４１５に示された
従来のパターン欠陥検査装置を示す模式断面図である。[Prior Art J] FIG. 2 is a schematic sectional view showing a conventional pattern defect inspection apparatus disclosed in, for example, Japanese Patent Laid-Open No. 61-200415.
図において（１）は電子銃、（２）は加速！極、（３）
は集束レンズ、（４）は偏向！極、（５）は対物レンズ
、（６）は検出器、（７）は試料ステージ、（８）は検
査される試料、（９）は真空試料室、（５）は走査信号
発生回路（１６）はステージ駆動回路、（１７）は欠陥
検出回路である。In the figure, (1) is the electron gun, and (2) is the acceleration! pole, (3)
is a focusing lens, and (4) is a deflection lens! (5) is the objective lens, (6) is the detector, (7) is the sample stage, (8) is the sample to be inspected, (9) is the vacuum sample chamber, (5) is the scanning signal generation circuit (16 ) is a stage drive circuit, and (17) is a defect detection circuit.
次に動作について説明する。電子銃α）より発せられた
電子は、加速電極（２）によって加速され、集束レンズ
（３）、対物レンズ（５）によって集束ビームとなシ、
試料ステージ（７）上に載置された試料（８）上のパタ
ーンに照射される。入射電子ビームを試料（８）上に照
射することによって発生する反射電子、二次電子を検出
する検出器（６）からの信号を基に、欠陥検出回路（１
７）がパターンの種類、精度等によって、各種のア／Ｉ
／：ｒ′リズムによシ欠陥を検出する。ステージ駆動回
路（１６）は、欠陥検査領域に合わせて試料ステージ（
７）上の試料を移動させる。Next, the operation will be explained. Electrons emitted from the electron gun α) are accelerated by an accelerating electrode (2) and turned into a focused beam by a focusing lens (3) and an objective lens (5).
A pattern on a sample (8) placed on a sample stage (7) is irradiated. The defect detection circuit (1) detects reflected electrons and secondary electrons generated by irradiating the incident electron beam onto the sample (8) based on signals from the detector (6).
7) may vary depending on the type of pattern, accuracy, etc.
Detect defects based on the /:r' rhythm. The stage drive circuit (16) moves the sample stage (
7) Move the sample above.
〔発明が解決しようとする課題］
従来の電子ビームパターン欠陥検査装置は、以上のよう
に構成されておｌＸ線マスクのような絶縁薄膜基板上の
パターンを検査する場合、電子の電荷による帯電現象を
引き起こす。この帯電の電界によシ後続の電子ビームの
軌道が曲げられ、日差す箇所に集束電子ビームが照射で
きないという問題点かあυ、その対策が必要であった。[Problems to be Solved by the Invention] The conventional electron beam pattern defect inspection apparatus is configured as described above, and when inspecting a pattern on an insulating thin film substrate such as an X-ray mask, a charging phenomenon due to electron charges occurs. cause. This electrified electric field bends the trajectory of the subsequent electron beam, preventing the focused electron beam from irradiating areas exposed to sunlight, so a countermeasure was needed.
この発明は、上記のような問題点を解決するためになさ
れたもので、電子ビームによって絶縁薄膜基板上のパタ
ーンを検査する際に、発生する帯電現象を緩和し、微細
パターンの検査ｗＩ度の向上ができる電子ビームパター
ン欠陥検査装置を得ることを目的とする。This invention was made in order to solve the above-mentioned problems, and it alleviates the charging phenomenon that occurs when inspecting patterns on an insulating thin film substrate with an electron beam, thereby increasing the degree of inspection of fine patterns. The object of the present invention is to obtain an improved electron beam pattern defect inspection device.
〔課題を解決するための手段」
この発明に係る電子ビームパターン欠陥検査装置は、従
来の電子ビームパターン欠陥検査装置の試料ステージの
裏面側に、ガス供給源、イオン化室、加速部のイオン照
射部を備えたものである。[Means for Solving the Problems] The electron beam pattern defect inspection apparatus according to the present invention includes a gas supply source, an ionization chamber, and an ion irradiation section of the acceleration section on the back side of the sample stage of the conventional electron beam pattern defect inspection apparatus. It is equipped with the following.
〔作用Ｊ
この発明におけるイオン照射部よシ発せられた正イオン
は、ｗｉ膜絶縁基板の裏面側に照射され、検査グローブ
である電子ビームの照射によって誘起される帯電を緩和
する。[Operation J] The positive ions emitted from the ion irradiation section of the present invention are irradiated onto the back side of the wi film insulating substrate to alleviate the electrification induced by the irradiation of the electron beam which is the inspection glove.
〔実施例」
以下、この発明の一実施例を図について説明する。第１
図は電子ビームパターン欠陥検査装置の模式断面図であ
る。図においてα）〜（９）、（１５）〜（１７）は第
２図の従来例に示したものと同等であるので説明の重複
を避ける。（１１）はガス供給源、（１２）はイオン化
室、（１３）はイオンの加速部、（１４）はイオンシャ
ワ一部である。[Example] Hereinafter, an example of the present invention will be described with reference to the drawings. 1st
The figure is a schematic cross-sectional view of an electron beam pattern defect inspection device. In the figure, α) to (9) and (15) to (17) are the same as those shown in the conventional example of FIG. 2, so redundant explanation will be avoided. (11) is a gas supply source, (12) is an ionization chamber, (13) is an ion acceleration section, and (14) is a part of an ion shower.
次に動作について説明する。電子銃（１）よシ発せられ
た電子は加速電極（２）によって加速され、集束レンズ
（３）、対物レンズ（５）によって集束せられ、試料ス
テージ（７）上に載った試料特にＸ線マスク等の薄膜絶
縁基板である資料（８）に形成されているパターン表面
を照射する。その間走査信号発生回路（１５）によシ駆
動される偏向電極（４）によシ、電子ビームは、試料（
８）上のパターン表面を走査される。Next, the operation will be explained. Electrons emitted by the electron gun (1) are accelerated by an accelerating electrode (2), focused by a focusing lens (3) and an objective lens (5), and are focused on the sample placed on the sample stage (7), especially X-rays. The surface of the pattern formed on the material (8), which is a thin film insulating substrate such as a mask, is irradiated. During this time, the electron beam is directed to the sample (
8) The upper pattern surface is scanned.
電子ビームをパターン表面上に照射することによシ発生
する。反射電子は、検出器（６）Ｋよシ検出せられ、検
出信号は、欠陥検出回路（１７）によシ処理され、欠陥
位置、形状等が検出される。この一連の手順中、ガス供
給源（１１）よシ、供給されたガスは、イオン化！ （
１２）内でイオンにされる。イオンは、加速部（１３）
によシ加速されてイオンシャワー部（１４）内をシャワ
ー状に、試料（８）の裏面に照射される。試料（８）表
面に、電子ビームを照射した際誘起される帯電は、電子
ビームの加速電圧、試料（８）の材質等によって、正又
は負にもなシ得るので薄膜絶縁基板が負に帯電している
場合には、正イオンの々ワーを薄膜絶縁基板が、正に帯
電している場合には負イオンのシャワーを照射すること
によシ、帯電を緩和することができる。It is generated by irradiating the pattern surface with an electron beam. The reflected electrons are detected by a detector (6) K, and the detection signal is processed by a defect detection circuit (17) to detect the defect position, shape, etc. During this series of steps, the gas supplied by the gas supply source (11) becomes ionized! (
12) is ionized within. Ions are accelerated in the acceleration section (13)
The ions are accelerated by the ion shower section (14) and irradiated onto the back surface of the sample (8) in the form of a shower. The charge induced when the surface of the sample (8) is irradiated with an electron beam can be positive or negative depending on the accelerating voltage of the electron beam, the material of the sample (8), etc., so the thin film insulating substrate is negatively charged. If the thin film insulating substrate is positively charged, the charging can be alleviated by irradiating it with a shower of negative ions.
試料（８）裏面からイオンを照射している理由は、イオ
ンをパターン表面から照射し九場合も、同様の効果が得
られるが、イオン照射によシ、試料（８）上のパターン
が変形を受けるためであシ、裏面から照射しても、Ｘ線
マスク等の薄膜絶縁膜上のパターンを検査する際発生す
る帯電を充分緩和することができる。The reason why ions are irradiated from the back side of sample (8) is that the same effect can be obtained by irradiating ions from the surface of the pattern, but the pattern on sample (8) is deformed due to ion irradiation. Even if irradiation is performed from the back side, charging that occurs when inspecting a pattern on a thin insulating film such as an X-ray mask can be sufficiently alleviated.
〔発明の効果Ｊ
以上のように、この発明によれば、電子ビームパターン
欠陥検査装置Ｋ、イオンシャワー照射部を設置し、被検
査試料の裏面から、イオンを照射するようにし九ので、
検査グローブである電子ビームによる帯電を緩和するこ
とができ、ビームが曲げられず精度の高い検査上するこ
とができる。[Effects of the Invention J As described above, according to the present invention, the electron beam pattern defect inspection apparatus K and the ion shower irradiation unit are installed to irradiate ions from the back side of the sample to be inspected.
The charging caused by the electron beam, which is the inspection glove, can be alleviated, and the beam is not bent, allowing for highly accurate inspection.
第１図は、この発明の一実施例による電子ビームパター
ン欠陥検査装置の模式断面図、第２図は従来の電子ビー
ムパターン欠陥検査装置の模式断面図である。
図においてα）は電子銃、■）は加速電極、（３）は集
束レンズ、（４）は偏向電極、（５）は対物レンズ、（
６）は検出器、（７）は試料ステージ、（８）は試料、
（９）は真空材料室、（１１）はガス供給源、（１２）
はイオン化室、（１３）は加速部、（１４）はイオンシ
ャワ一部、（１５）は走査信号発生回路、（１６）はス
テージ駆動回路、（１７）は欠陥検出回路である。
なお、
図中、
同一符号は、
同−又は相当部分を
示す。
代
理
人
大
岩
増
雄
第１図
！
Ｉ電り鵜
２−述を極
３ 棗零しンに
４璃Ｉ′１を湯
５、片オワ１シスＪ
ｌ挾二呑
７ ｐ＼行ステージ
ｇ ト＼糟
デ鳥【八ｐｒ１
１７グ人夙ノ七“疎
１２４オシ４乙糺
！３が１Ｌ＃
ｌす、イオンシャワー音ｐ
Ｉ５え衾４２号Ｊ！Ｌ支Ｃ口ｙろ一
７ｔ、ステーレ９％Ｌ動回外
１７尺１１支二！］ｇ）−
第２図
！
手
続
補
正
食
（自発）
２、発明の名称
電子ビームパターン欠陥検査装置
３、補正をする者
代表者
士
Ｉじ１
岐
守
哉
４、代
理
人
／で−ニ
５、 補正の対象
明細書の発明の詳細な説明の欄。
６、 補正の内容
＋１）明細書の第２頁第７行に「（５）は走査信号発生
回路」とあるのを「αりは走査信号発生回路」に訂正す
る。
以 上FIG. 1 is a schematic sectional view of an electron beam pattern defect inspection apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic sectional view of a conventional electron beam pattern defect inspection apparatus. In the figure, α) is an electron gun, ■) is an accelerating electrode, (3) is a focusing lens, (4) is a deflection electrode, (5) is an objective lens, (
6) is a detector, (7) is a sample stage, (8) is a sample,
(9) is a vacuum material chamber, (11) is a gas supply source, (12)
(13) is an ionization chamber, (13) is an acceleration section, (14) is a part of an ion shower, (15) is a scanning signal generation circuit, (16) is a stage drive circuit, and (17) is a defect detection circuit. In addition, in the figures, the same reference numerals indicate the same or equivalent parts. Agent Masuo Oiwa Figure 1! I electric cormorant 2-sho wa koku 3 Natsume zero shin 4 ri I'1 yu 5, Kata Owa 1 sis J l 2 cups 7 p＼ row stage g To＼ 糟de bird [8 pr1 17gu people Shunoshichi "124 Oshi 4 Otsutaji! 3 is 1L#l, ion shower sound p I5 Ejuku No. 42 J! L branch C mouth y Lo 1 7t, Stere 9% L movement supination 17 shaku 11 branch 2 ] g) - Figure 2! Procedural correction diet (spontaneous) 2. Name of the invention Electron beam pattern defect inspection device 3. Person making the correction Representative Iji1 Kimoriya 4. Agent/De-25 , Column for detailed explanation of the invention in the specification subject to amendment. 6. Contents of amendment + 1) In the 7th line of page 2 of the specification, the statement ``(5) is a scanning signal generation circuit'' should be changed to ``alpha "scanning signal generation circuit". that's all
Claims (1)
駆動する走査信号発生回路、反射電子又は二次電子検出
器、これらの検出器につながれた欠陥検出回路、位置検
出機構とを備えたステージ駆動回路及び真空試料室とを
備えた、電子ビームパターン欠陥検査装置に、ガス供給
源・イオン化室・加速部等を含むイオン照射装置を、上
記試料ステージの下部に設置し、試料の裏面からイオン
をシャワー状に照射するようにしたことを特徴とする電
子ビームパターン欠陥検査装置。A stage drive circuit comprising a scanning deflection electrode or coil, a scanning signal generation circuit for driving these electrodes or coils, a backscattered electron or secondary electron detector, a defect detection circuit connected to these detectors, and a position detection mechanism. An ion irradiation device including a gas supply source, an ionization chamber, an acceleration section, etc. is installed at the bottom of the sample stage, and ions are showered from the back side of the sample. An electron beam pattern defect inspection device characterized in that the electron beam is irradiated in a shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16560888A JPH0215546A (en) | 1988-06-30 | 1988-06-30 | Electron beam pattern defect survey instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16560888A JPH0215546A (en) | 1988-06-30 | 1988-06-30 | Electron beam pattern defect survey instrument |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0215546A true JPH0215546A (en) | 1990-01-19 |
Family
ID=15815594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16560888A Pending JPH0215546A (en) | 1988-06-30 | 1988-06-30 | Electron beam pattern defect survey instrument |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0215546A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6172363B1 (en) | 1996-03-05 | 2001-01-09 | Hitachi, Ltd. | Method and apparatus for inspecting integrated circuit pattern |
| US6348690B1 (en) | 1997-08-07 | 2002-02-19 | Hitachi, Ltd. | Method and an apparatus of an inspection system using an electron beam |
| US6583634B1 (en) | 1999-04-28 | 2003-06-24 | Hitachi, Ltd. | Method of inspecting circuit pattern and inspecting instrument |
| WO2007083756A1 (en) | 2006-01-20 | 2007-07-26 | Juridical Foundation Osaka Industrial Promotion Organization | Liquid medium for preventing charge-up in electron microscope and method of observing sample using the same |
| JP2009175046A (en) * | 2008-01-25 | 2009-08-06 | Denso Corp | Processing device and producing method of thin-film sample |
| US7696487B2 (en) | 2005-11-11 | 2010-04-13 | Hitachi High-Technologies Corporation | Circuit pattern inspection apparatus |
| US8036447B2 (en) | 2005-02-01 | 2011-10-11 | Hitachi High-Technologies Corporation | Inspection apparatus for inspecting patterns of a substrate |
-
1988
- 1988-06-30 JP JP16560888A patent/JPH0215546A/en active Pending
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6172363B1 (en) | 1996-03-05 | 2001-01-09 | Hitachi, Ltd. | Method and apparatus for inspecting integrated circuit pattern |
| US6329826B1 (en) | 1996-03-05 | 2001-12-11 | Hitachi, Ltd. | Method and apparatus for inspecting integrated circuit pattern |
| US7952074B2 (en) | 1996-03-05 | 2011-05-31 | Hitachi, Ltd. | Method and apparatus for inspecting integrated circuit pattern |
| US7417444B2 (en) | 1996-03-05 | 2008-08-26 | Hitachi, Ltd. | Method and apparatus for inspecting integrated circuit pattern |
| US6559663B2 (en) | 1996-03-05 | 2003-05-06 | Hitachi, Ltd. | Method and apparatus for inspecting integrated circuit pattern |
| US7012252B2 (en) | 1997-08-07 | 2006-03-14 | Hitachi, Ltd. | Method and an apparatus of an inspection system using an electron beam |
| US6987265B2 (en) | 1997-08-07 | 2006-01-17 | Hitachi, Ltd. | Method and an apparatus of an inspection system using an electron beam |
| US7232996B2 (en) | 1997-08-07 | 2007-06-19 | Hitachi, Ltd. | Method and an apparatus of an inspection system using an electron beam |
| US6452178B2 (en) | 1997-08-07 | 2002-09-17 | Hitachi, Ltd. | Method and an apparatus of an inspection system using an electron beam |
| US7439506B2 (en) | 1997-08-07 | 2008-10-21 | Hitachi, Ltd. | Method and an apparatus of an inspection system using an electron beam |
| US8604430B2 (en) | 1997-08-07 | 2013-12-10 | Hitachi, Ltd. | Method and an apparatus of an inspection system using an electron beam |
| US8134125B2 (en) | 1997-08-07 | 2012-03-13 | Hitachi, Ltd. | Method and apparatus of an inspection system using an electron beam |
| US6348690B1 (en) | 1997-08-07 | 2002-02-19 | Hitachi, Ltd. | Method and an apparatus of an inspection system using an electron beam |
| US6703850B2 (en) | 1999-04-28 | 2004-03-09 | Hitachi, Ltd. | Method of inspecting circuit pattern and inspecting instrument |
| US6583634B1 (en) | 1999-04-28 | 2003-06-24 | Hitachi, Ltd. | Method of inspecting circuit pattern and inspecting instrument |
| US8036447B2 (en) | 2005-02-01 | 2011-10-11 | Hitachi High-Technologies Corporation | Inspection apparatus for inspecting patterns of a substrate |
| US7696487B2 (en) | 2005-11-11 | 2010-04-13 | Hitachi High-Technologies Corporation | Circuit pattern inspection apparatus |
| WO2007083756A1 (en) | 2006-01-20 | 2007-07-26 | Juridical Foundation Osaka Industrial Promotion Organization | Liquid medium for preventing charge-up in electron microscope and method of observing sample using the same |
| US7880144B2 (en) | 2006-01-20 | 2011-02-01 | Juridical Foundation Osaka Industrial Promotion Organization c/o Mydome Osaka | Liquid medium for preventing charge-up in electron microscope and method of observing sample using the same |
| EP3078962A1 (en) | 2006-01-20 | 2016-10-12 | Hitachi High-Technologies Corporation | Liquid medium for preventing charge-up in electron microscope and method of observing sample using the same |
| JP2009175046A (en) * | 2008-01-25 | 2009-08-06 | Denso Corp | Processing device and producing method of thin-film sample |
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