JPH02153859A - Electroconductive ceramic sintered material - Google Patents
Electroconductive ceramic sintered materialInfo
- Publication number
- JPH02153859A JPH02153859A JP63306316A JP30631688A JPH02153859A JP H02153859 A JPH02153859 A JP H02153859A JP 63306316 A JP63306316 A JP 63306316A JP 30631688 A JP30631688 A JP 30631688A JP H02153859 A JPH02153859 A JP H02153859A
- Authority
- JP
- Japan
- Prior art keywords
- cuo
- raw material
- al2o3
- sintered body
- ceramic sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 title abstract description 13
- 239000002994 raw material Substances 0.000 claims abstract description 15
- 238000005245 sintering Methods 0.000 claims abstract description 13
- 239000012298 atmosphere Substances 0.000 claims abstract description 7
- 239000000654 additive Substances 0.000 claims abstract description 5
- 230000000996 additive effect Effects 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 abstract description 18
- 239000000843 powder Substances 0.000 abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052593 corundum Inorganic materials 0.000 abstract description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 5
- 238000002156 mixing Methods 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 abstract 2
- 239000008187 granular material Substances 0.000 abstract 1
- 229910001629 magnesium chloride Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 208000037584 hereditary sensory and autonomic neuropathy Diseases 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- NFYLSJDPENHSBT-UHFFFAOYSA-N chromium(3+);lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+3].[La+3] NFYLSJDPENHSBT-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は電気伝導性を有し、かつ耐摩耗性、強度および
耐熱性に浸れ、導電材料、接点、ヒータ、静電気防止部
品として有用な導電性セラミックス焼結体に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is a conductive material that is electrically conductive and has excellent wear resistance, strength, and heat resistance, and is useful as a conductive material, a contact, a heater, and an antistatic component. The present invention relates to ceramic sintered bodies.
［従来の技術］
セラミックスの最もポピユラーな用途は、絶縁体として
の機能を生かしたもので、その抵抗率は代表的なＡ Ｉ
２０３で１０日Ω・ｃＩＩ程度であって特に高温での絶
縁性に優れる。一方において高温用の発熱体材料として
、黒鉛、炭化珪素、ランタンクロマイトなどがセラミッ
クス系発熱体として使用されている。[Conventional technology] The most popular use of ceramics is to take advantage of its function as an insulator, and its resistivity is typical of AI.
203 has a resistance of about 10 Ω·cII, and has excellent insulation properties especially at high temperatures. On the other hand, as heating element materials for high temperatures, graphite, silicon carbide, lanthanum chromite, and the like are used as ceramic heating elements.
しかしながら、これらセラミックス系発熱体はいずれも
材料強度が低く、断面積を大きくする必要があり、その
ため速熱性に欠けかつ耐摩耗性に劣るという欠点があっ
た。そこで、ファインセラミックスに導電性を付与し、
従来のセラミックス系発熱体よりも高い強度を有し、発
熱体以外の分野にも応用される材料の開発がなされてき
た。However, all of these ceramic heating elements have low material strength, require a large cross-sectional area, and therefore lack rapid heating properties and have poor wear resistance. Therefore, by imparting conductivity to fine ceramics,
Materials have been developed that have higher strength than conventional ceramic heating elements and can be applied to fields other than heating elements.
すなわち、固有抵抗が１０１〜１０１６Ω・ｅａの絶縁
物質であるＡｌ２Ｏ３に導電性を付与する方法として、
Ｔ ｉＣ、ＮｂＣ、ＴａＣ、ＷＣ、ＭｏｚＣ１Ｃｒ２０
ｓ等の金属炭化物を１８〜４０体積％添加する方法が知
られている（機能材料、１９８７年２月号、１６頁以下
）、さらに、ＺｒＯ２，５ｉｚＮ＜あるいはＡ１□Ｏ１
等の導電性に劣る材料に放電加工性を付与するため、こ
れらセラミックスと炭化珪素、ホウ化ジルコニウム、ホ
ウ化チタン、窒化チタンおよび窒化珪素との複合焼結体
が知られている（セラミックス、２１［８コア１９−２
５（１９８６））。That is, as a method of imparting conductivity to Al2O3, which is an insulating material with a specific resistance of 101 to 1016 Ω·ea,
T iC, NbC, TaC, WC, MozC1Cr20
A method is known in which 18 to 40% by volume of metal carbides such as s are added (Functional Materials, February 1987 issue, p. 16 et seq.);
Composite sintered bodies of these ceramics with silicon carbide, zirconium boride, titanium boride, titanium nitride, and silicon nitride are known in order to impart electrical discharge machinability to materials with poor conductivity such as ceramics, etc. (Ceramics, 21 [8 cores 19-2
5 (1986)).
［発明が解決しようとする課題］
しかしながら、前者の方法においては、ち密で高強度の
材料を得るためにはホットプレス法（以下ＨＰ法という
）またはホットアイソスタチックプレス法（以下ＨＩＰ
法という）により製造する必要があり、生産性が悪くか
つ製造コストが高くな。[Problems to be Solved by the Invention] However, in the former method, in order to obtain a dense and high-strength material, hot pressing method (hereinafter referred to as HP method) or hot isostatic pressing method (hereinafter referred to as HIP method) is required.
It is necessary to manufacture the product by a method called ``method'', which results in poor productivity and high manufacturing cost.
るという欠点がある。また、後者の方法においては、得
られる焼結体の比抵抗はＩ Ｘ １０−’〜４×１０−
５Ω・ａｍという値であり優れているが、これらに複合
する非酸化物の原料は高価であり、しかもＨＰ法または
ＨＩＰ法によりＡｒまたはＮ２雰囲気で焼結を行わなけ
ればならないので、製造コストが高くなるという欠点を
有している。It has the disadvantage of being In addition, in the latter method, the specific resistance of the sintered body obtained is I x 10-' to 4 x 10-
The value is 5Ω・am, which is excellent, but the non-oxide raw materials to be combined with these are expensive, and sintering must be performed in an Ar or N2 atmosphere using the HP method or HIP method, so the manufacturing cost is high. It has the disadvantage of being expensive.
本発明は導電性セラミックス焼結体の前記のごとき問題
点に鑑みてなされたものであって、電気伝導性を有しか
つ耐摩耗性、強度および耐熱性に優れ、大気中で常圧焼
結することができる導電性セラミックス焼結体を提供す
ることを目的とする。The present invention has been made in view of the above-mentioned problems of conductive ceramic sintered bodies, which have electrical conductivity, excellent wear resistance, strength, and heat resistance, and which can be sintered under normal pressure in the atmosphere. The purpose of the present invention is to provide a conductive ceramic sintered body that can
［課題を解決するための手段］
本発明の導電性セラミックス焼結体は、純度８０％以上
のＡ１□０．を主原料とし、これに添加物としてＣｕＯ
をモル％で０．０１〜５０％の範囲で添加し、大気中で
焼結したことを要旨とする。[Means for Solving the Problems] The conductive ceramic sintered body of the present invention has an A1□0. is the main raw material, and CuO is added as an additive to this.
is added in a range of 0.01 to 50% by mole and sintered in the atmosphere.
主原料であるＡｈＯｓには不純物としてアルカリ金属酸
化物以外の酸化物、特にはアルカリ土類酸化物、シリカ
、ジルコニア、チタニア等を含有させることができる。AhOs, which is the main raw material, can contain oxides other than alkali metal oxides, particularly alkaline earth oxides, silica, zirconia, titania, etc., as impurities.
これら不純物の含有泣は２０％以下であることが必要で
ある。これら不純物が２０％を越えるとＩＪ的強度およ
び耐摩耗性が劣化するからである。The content of these impurities must be 20% or less. This is because if these impurities exceed 20%, IJ strength and wear resistance deteriorate.
主原料であるＡ１□Ｏ５および導電性付与成分として配
合するＣｕＯは、いずれも粉末の平均粒子径が１，５μ
ｍ以下の高純度粉末を使用する。ＣｕＯ粒子径が１．５
μ−を越えると、Ａ Ｉ ２０ ｓ粒界に存在するＣｕ
Ｏ粒子数が少なくなる結果、比抵抗が増大する。また、
原料の粉末混合段階では、焼結助剤としてＭｇＯ、Ｍｇ
Ｃ１２またはＭｇ化合物を２０ ％重量以下を配合する
ことがある。原料粉末は十分に粉砕混合を行った後造粒
し焼結用原料とする。A1□O5, which is the main raw material, and CuO, which is blended as a conductivity imparting component, both have an average powder particle size of 1.5 μm.
Use high purity powder of less than m. CuO particle size is 1.5
When μ- is exceeded, Cu present at the A I 20 s grain boundary
As the number of O particles decreases, the specific resistance increases. Also,
At the raw material powder mixing stage, MgO and Mg are used as sintering aids.
C12 or Mg compounds may be added in an amount of 20% or less by weight. The raw material powder is sufficiently pulverized and mixed, and then granulated to provide a raw material for sintering.
導電性成分として添加するＣｕＯの量をモル％で０，０
１〜５０％としたのは、ＣｕＯの添加量が０．０１％以
下の場合は、微妙な結晶粒径の差異により比抵抗が大き
く変動し、安定した固有抵抗を有する焼結体が得られな
いからであり、またＣｕＯの添加量が５０％を越えると
、焼結性および。The amount of CuO added as a conductive component is 0.0 in mol%.
The reason for setting it at 1 to 50% is that if the amount of CuO added is 0.01% or less, the resistivity will fluctuate greatly due to subtle differences in crystal grain size, and a sintered body with stable resistivity will not be obtained. Moreover, if the amount of CuO added exceeds 50%, the sinterability will deteriorate.
耐酸化性が劣化するからである。This is because oxidation resistance deteriorates.
焼結体を得るための焼結温度は１４００〜１６５０℃の
範囲であることが好ましい、焼結温度が１４００°Ｃ未
満であるときは、焼結が十分に起こらないからであり、
焼結温度が１６００℃を越えると、焼結体の結晶粒が成
長し比抵抗が増大するからである。The sintering temperature for obtaining the sintered body is preferably in the range of 1400 to 1650°C, because if the sintering temperature is less than 1400°C, sufficient sintering will not occur.
This is because if the sintering temperature exceeds 1600° C., the crystal grains of the sintered body grow and the resistivity increases.
［作用］
本発明の導電性セラミックス焼結体は、Ａ Ｉ２０、を
主原料とするため、従来のセラミックス系発熱体よりも
強度、耐摩耗性および耐熱性にすぐれる。また、導電性
成分と化てＣｕＯを添加したので、比抵抗を充分に小さ
くすることができ、さらに添加するＣｕＯの量を調節す
ることにより、広い範囲で比抵抗値を変化させることが
できる。本発明の導電性セラミックス焼結体は、大気中
で常圧焼結することによって得られるので、製造コスト
が安価である。[Function] Since the conductive ceramic sintered body of the present invention uses AI20 as the main raw material, it has superior strength, wear resistance, and heat resistance than conventional ceramic heating elements. Furthermore, since CuO is added as a conductive component, the resistivity can be made sufficiently small, and further, by adjusting the amount of CuO added, the resistivity value can be varied over a wide range. Since the conductive ceramic sintered body of the present invention is obtained by normal pressure sintering in the atmosphere, the manufacturing cost is low.
焼結助剤としてＭ、化合物を添加すると、ＡＯｌの粒成
長を抑制し、その結果強度の高い焼結体を得ることがで
きる。なお、不純物としてＳｉＯ□が添加されると、よ
り低い温度で緻密化させることができ、Ｚｒ０２３添加
すると強度を上げることができる。When M or a compound is added as a sintering aid, grain growth of AOl can be suppressed, and as a result, a sintered body with high strength can be obtained. Note that when SiO□ is added as an impurity, it can be densified at a lower temperature, and when Zr023 is added, the strength can be increased.
［実施例］
本発明の具体的な実施例について以下に説明し、本発明
の効果を明らかにする。[Example] Specific examples of the present invention will be described below to clarify the effects of the present invention.
主原料となるＡ１□０．（純度９９．５％）に導電性成
分Ｃｕｂ（純度９９．９％〉を第１表に示す比すで混合
した。混合は混合粉１００ｇに対して水５０ｇと分散剤
としてアクリル酸オリゴマーを０５ｃｃ添加し、アルミ
ナ玉石を使用し、ボンドミル中で２４時間混きした。The main raw material is A1□0. (purity 99.5%) and the conductive component Cub (purity 99.9%) were mixed in the ratio shown in Table 1.The mixing was as follows: 100g of mixed powder, 50g of water, and 05cc of acrylic acid oligomer as a dispersant. and mixed in a bond mill for 24 hours using alumina cobblestone.
得られた混合物の泥漿を乾燥させ、次いで篩分は法によ
り顆粒化した。これを金型で予備成形した後、１５００
ｋｇ／ ａｍ２でＣＩＰ処理を行い成形品とした。こ
の成形品１ｔ５ｏｏ℃で１時間焼成し焼結体を得た。得
られた焼結体の吸水率および比抵抗を測定し、結果を第
１表に示した。また、ＣｕＯ添加添加量モル比抵抗（Ω
・ｃ謡）の関係を示す図を第１図に示した。The slurry of the resulting mixture was dried and the sieved fraction was then granulated by a method. After preforming this with a mold, 1500
A molded product was obtained by CIP treatment at kg/am2. This molded product was fired at 1t5oo°C for 1 hour to obtain a sintered body. The water absorption rate and specific resistance of the obtained sintered body were measured, and the results are shown in Table 1. In addition, the amount of CuO added molar specific resistance (Ω
・A diagram showing the relationship between the following is shown in Figure 1.
（以 下 余 白 ）
第１表および第１図から明らかなように、ＣｕＯを添加
しなかった比較例は比抵抗が１０目Ω・ｃＴａであった
のに対し、本発明例である試料Ｎ。(Left below) As is clear from Table 1 and Figure 1, the comparative example in which CuO was not added had a specific resistance of 10 Ω·cTa, whereas the inventive sample N .
１〜５は、焼結体の吸水率が０％であって完全に＃１１
密化しており、比抵抗が１０″Ω ０１１１台にまで低
下し、優れた導電性を示すことが確認された。1 to 5, the water absorption rate of the sintered body is 0% and it is completely #11.
It was confirmed that the material was dense and the specific resistance was reduced to 10''Ω0111, showing excellent conductivity.
また、ＣｕＯの添加量が５〜２０モル％と変化するのに
対応し、比抵抗が１０９〜１０４と変化し、ＣｕＯの添
加量により比抵抗が調節できることが明らかとなった。Furthermore, as the amount of CuO added changes from 5 to 20 mol %, the specific resistance changes from 109 to 104, making it clear that the specific resistance can be adjusted by changing the amount of CuO added.
また、本発明例の焼結体について、ダイヤモンド砥石で
研削したところ、ＣｕＯを全く含まない比較例の焼結体
と同様に研削しにくいことが確認され、優れた耐１？れ
性を示ずことが明らかとなった。なお、耐摩耗性を示す
１つの尺度であるビッカース硬度が１４００ ｋｇ／
ｍｍ２であり、耐摩耗性に潰れていることが確認された
。さらに、本発明例の焼結体について３点曲げ強度を測
定したところ、いずれも３５ｋｇ／ｌｌｌ１１２に近い
値を示し、高強度であることが確認された。Furthermore, when the sintered body of the present invention example was ground with a diamond grindstone, it was confirmed that it was difficult to grind, similar to the sintered body of the comparative example that did not contain any CuO, and showed excellent resistance to 1? It was found that there was no susceptibility to The Vickers hardness, which is a measure of wear resistance, is 1400 kg/
mm2, and it was confirmed that it was crushed due to wear resistance. Furthermore, when the three-point bending strength of the sintered bodies of the examples of the present invention was measured, they all showed values close to 35 kg/lll112, confirming that they had high strength.
なお、本実施例においてはＣＩＰ処理による成形法を示
したが、プレス法に限らず、シート成形法、鋳込み成形
法、射出成形法も可能である。また、ペースト化するこ
とにより印刷、焼付けの手法も可能である。In addition, although the molding method by CIP treatment was shown in this Example, it is not limited to a press method, and sheet molding method, cast molding method, and injection molding method are also possible. Furthermore, printing and baking methods are also possible by making it into a paste.
［発明の効果コ
本発明の導電性セラミックス焼結体は、以上説明したよ
うに、純度８０％以上のＡ Ｉ ２０ ｓを主原料とし
、これに添加物としてＣｕＯをモル％で００１〜５０％
の範囲で添加し、大気中で焼結したことを特徴とするも
のであって、Ａ Ｉ ２０３を主原料とすることにより
、従来の導電性セラミックスよりも強度、耐摩耗性およ
び耐食性に優れ、導電性成分としてＣｕＯを添加したの
で、比抵抗を充分に小さくすることができる。さらに添
加するＣＵＯの量を調節することにより、広い範囲で比
抵抗値を変化させることができる。また、本発明の導電
性セラミックス焼結体は、大気中で常圧焼結によって得
られるので、従来のものより製造コストが安い０本発明
の導電性セラミックス焼結体は、比抵抗の小さいものは
導電Ｎ料、電気接点、ヒータとして有用であり、比抵抗
の大きいものは静電気防止用の部品、タイル、壁材とし
て有用なものである。[Effects of the Invention] As explained above, the conductive ceramic sintered body of the present invention uses A I 20 s with a purity of 80% or more as the main raw material, and CuO as an additive in the range of 0.01 to 50% by mole.
It is characterized by being added within the range of Since CuO is added as a conductive component, the specific resistance can be made sufficiently small. Further, by adjusting the amount of CUO added, the specific resistance value can be changed over a wide range. In addition, since the conductive ceramic sintered body of the present invention is obtained by pressureless sintering in the atmosphere, the manufacturing cost is lower than that of conventional ones.The conductive ceramic sintered body of the present invention has a low specific resistance. are useful as conductive N materials, electrical contacts, and heaters, and those with high specific resistance are useful as antistatic parts, tiles, and wall materials.
第１図はＣｕ○添加添加量モル比抵抗（Ω・Ｃｌ０）の
関係を示す図である。
第１１２FIG. 1 is a diagram showing the relationship between the molar specific resistance (Ω·Cl0) of Cu○ addition amount. 112th
Claims (3)
これに添加物としてＣｕＯをモル％で０．０１〜５０％
の範囲で添加し、大気中で焼結したことを特徴とする導
電性セラミックス焼結体。(1) Main raw material is Al_2O_3 with a purity of 80% or more,
Add CuO as an additive to this in a mol% range of 0.01 to 50%.
A conductive ceramic sintered body characterized by being sintered in the atmosphere with the addition of
化合物を２０％重量以下を含有する特許請求の範囲第１
項に記載の導電性セラミックス焼結体。(2) MgO, MgCl_2 or Mg as a sintering aid
Claim 1 containing 20% or less of the compound by weight
The conductive ceramic sintered body described in .
の範囲第１項または第２項に記載の導電性セラミックス
焼結体。(3) The conductive ceramic sintered body according to claim 1 or 2, wherein the sintering temperature is 1400 to 1650°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63306316A JPH02153859A (en) | 1988-12-03 | 1988-12-03 | Electroconductive ceramic sintered material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63306316A JPH02153859A (en) | 1988-12-03 | 1988-12-03 | Electroconductive ceramic sintered material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02153859A true JPH02153859A (en) | 1990-06-13 |
Family
ID=17955639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63306316A Pending JPH02153859A (en) | 1988-12-03 | 1988-12-03 | Electroconductive ceramic sintered material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02153859A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100374704B1 (en) * | 2000-04-07 | 2003-03-04 | 한국기계연구원 | A Process for Manufacturing Nano Copper- Alumina Complex Powder |
-
1988
- 1988-12-03 JP JP63306316A patent/JPH02153859A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100374704B1 (en) * | 2000-04-07 | 2003-03-04 | 한국기계연구원 | A Process for Manufacturing Nano Copper- Alumina Complex Powder |
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