JPH02151385A - Weld structure and its manufacture - Google Patents
Weld structure and its manufactureInfo
- Publication number
- JPH02151385A JPH02151385A JP63303725A JP30372588A JPH02151385A JP H02151385 A JPH02151385 A JP H02151385A JP 63303725 A JP63303725 A JP 63303725A JP 30372588 A JP30372588 A JP 30372588A JP H02151385 A JPH02151385 A JP H02151385A
- Authority
- JP
- Japan
- Prior art keywords
- welded
- silicon
- welding
- inert gas
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 238000003466 welding Methods 0.000 claims abstract description 30
- 239000011261 inert gas Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000010894 electron beam technology Methods 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 4
- 229920001296 polysiloxane Polymers 0.000 abstract description 4
- 238000009941 weaving Methods 0.000 abstract description 2
- 238000005304 joining Methods 0.000 abstract 1
- 238000005121 nitriding Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000011863 silicon-based powder Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000008149 soap solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
本発明は溶接構造物とその製造方法に関するものである
。The present invention relates to a welded structure and a method for manufacturing the same.
シリコンウェーハ等の半導体物質に所望成分を拡散する
際、シリコンウェーハ等を支持する治具が必要となる。
現在、治具の素材として主に石英ガラスとシリコンが使
用されていることは周知の通りである。拡散物質の成分
が僅かに変動しても、成品となった半導体の性能に著し
い影響を及ぼすので、シリコンウェーハ等を支持する治
具についても、ウェーハまたは拡散物質と同材質である
か、またはこれらと反応しない材料であることが望まし
い。このような観点から前記石英ガラスとシリコンなら
びに窒化珪素が現在用いられているのであるが、石英ガ
ラスは溶接可能であるため治具の製造では便利であるが
、繰り返し熱サイクルを受けると脆化し易いと言う欠点
がある。
方、シリコンは熱脆化が少ないので長期間使用可能であ
ると云う大きなメリットがあるが、溶接が出来ない上に
脆いこともあって治具の製造が困難であると言う欠点が
ある。また、窒化珪素は熱に強いものの、不純物を混入
させる恐れがあると云う欠点がある。上記したように各
素材にはそれぞれ得失があるものの、安心して長期間使
用出来るシリコン製治具が、使用者から最高の素材であ
ると云う高い評価を受けるのも当然のことである。
このため、シリコンウェーハ等の半導体物質と直接接触
する要部にはシリコンを用い、連結部材等には溶接可能
な石英を用いた構成の治具が既に提案されている（実公
昭５９−４０４４４号公報参照）。また、構成の全部材
をシリコン製部材を用いて構成する治具においては、部
材を出来るだけ加工し易い形状とし、しかも組み立て可
能な形状が考案されて同様に提案されている（実公昭５
９−４０４４８号公報参照）。When diffusing a desired component into a semiconductor material such as a silicon wafer, a jig is required to support the silicon wafer or the like. It is well known that currently, quartz glass and silicon are mainly used as materials for jigs. Even a slight change in the composition of the diffusion material can have a significant effect on the performance of the finished semiconductor, so the jig that supports the silicon wafer, etc. must be made of the same material as the wafer or the diffusion material, or be made of the same material as the wafer or diffusion material. It is desirable that the material is non-reactive. From this point of view, the aforementioned quartz glass, silicon, and silicon nitride are currently being used. Although quartz glass is convenient for manufacturing jigs because it can be welded, it tends to become brittle when subjected to repeated thermal cycles. There is a drawback. On the other hand, silicon has the great advantage of being less susceptible to thermal embrittlement and can be used for a long period of time, but has the disadvantage that it cannot be welded and is brittle, making it difficult to manufacture jigs. Furthermore, although silicon nitride is resistant to heat, it has the disadvantage that it may contain impurities. As mentioned above, each material has its own advantages and disadvantages, but it is no wonder that silicone jigs, which can be used safely for long periods of time, receive high praise from users as being the best material. For this reason, a jig has already been proposed in which the main parts that come into direct contact with semiconductor materials such as silicon wafers are made of silicon, and the connecting members are made of weldable quartz (Utility Model Publication No. 59-40444). (see official bulletin). In addition, for a jig in which all the components are made of silicone members, a shape that is easy to process and assemble has been devised and similarly proposed.
(See Publication No. 9-40448).
上記したように実公昭５９−４０４４４号公報の技術は
、要部にシリコンを配した治具であるので、拡散工程に
使用して相当な性能を発揮すると共に、製造も可なり容
易となった。しかし、シリコンの連結部材として使用し
ている石英が熱サイクルを受けて経時劣化するので、定
期的に作り直す必要があった。
また、実公昭５９−４０４４８号公報に提案されている
技術では構成の全部材がシリコンであるので経時劣化の
懸念はないが、組み立て易くするためにその構造が限定
されると云う問題点があった。また、治具を洗浄したと
き嵌合部に染み込んだ溶剤が滲み出て来ると云う問題点
もあった。
したがって、経時劣化の少ないシリコンを素材とし、自
在な構造が可能でかつ洗浄時にも問題とならない治具が
求められていた。As mentioned above, the technology disclosed in Japanese Utility Model Publication No. 59-40444 uses a jig with silicon in its main parts, so it can be used in the diffusion process to exhibit considerable performance and is also quite easy to manufacture. . However, since the quartz used as the silicon connecting member deteriorates over time due to thermal cycles, it was necessary to periodically re-make it. Furthermore, in the technology proposed in Publication of Utility Model Publication No. 59-40448, all the components are made of silicon, so there is no concern about deterioration over time, but there is a problem in that the structure is limited in order to make it easier to assemble. Ta. There is also the problem that when the jig is cleaned, the solvent that has soaked into the fitting portion oozes out. Therefore, there has been a need for a jig that is made of silicone, which is less susceptible to deterioration over time, allows for flexible construction, and does not cause problems during cleaning.
本発明は上記した従来技術の課題を解決するためになさ
れたもので、シリコン製部材同士を溶接して一体化した
ことを特徴とする溶接構造物であり、溶接構造物が半導
体ウェーハボートである溶接構造物であり、また不活性
ガスが充填された密閉容器内で、２以上の被溶接部材を
当接もしくは近接し、該当接もしくは近接部にレーザー
ビームまたは電子ビームを照射して溶接することを特徴
とする溶接構造物の製造方法であり、さらに密閉容器が
グローブボックスであり、被溶接部材がシリコンである
溶接構造物の製造方法を提供するものである。The present invention has been made to solve the problems of the prior art described above, and is a welded structure characterized by welding and integrating silicon members, and the welded structure is a semiconductor wafer boat. Welding is a welding structure in which two or more members to be welded are brought into contact or close together in a closed container filled with inert gas, and the relevant or adjacent parts are irradiated with a laser beam or electron beam to perform welding. The present invention further provides a method for manufacturing a welded structure in which the closed container is a glove box and the member to be welded is silicon.
つぎに本発明を図示の一実施例に基づいて詳細に説明す
る。
図中１は本発明になる溶接構造物の一例であって、半導
体物質であるシリコンウェーハ等を支持するための治具
であり、多結晶質シリコンを素材とするセンター支持部
材１１および２本のサイド支持部材１２が左右に設けら
れた横板１３の所定位置に溶接されて一体的に組み立て
られている。
前記各部材は主に隅肉溶接によって溶接されており、セ
ンター支持部材１１およびサイド支持部材１２には溝１
１ａ１１２ａがそれぞれ設けられ、熱サイクルを受けて
もシリコンウェーハ等には外力が作用しないように支持
することが出来る構造となっている。
溶接構造物１を得る具体的手段の一例について第２図お
よび第３図を用いて説明する。
シリコンは高温で大気に曝されると、酸化したり窒化し
て脆化するので、溶接はシリコンと反応して脆化する恐
れのない、不活性ガス雰囲気の下で行われなければなら
ない。このため、前記シリコンからなる被溶接物（例え
ば板厚５■■の平板）１０は、不活性ガス（例えばアル
ゴンガス）が充填されている気密性に優れた密閉容器、
例えばグローブボックス２の内部において溶接される。
前記被溶接物１０は表面に油脂等が付着していると溶接
欠陥発生の原因となるため溶接に先立ち、例えばアルカ
リ性石鹸液（アルキルベンゼンスルホン酸を主剤とする
石鹸液等）中で煮沸し、油脂骨を鹸化後、純水にて洗浄
・乾燥されたものである。このような前処理された被溶
接物１０は、前記グローブボックス２内に設けられた、
例えばステンレス製の溶接台３の上に、Ｉ開先ＬＯａの
ギャップを０〜１．０−ｓに調節されて固定具３１によ
って固定される。
グローブボックス２内の空気をシリコンと反応して脆化
することのない前記不活性ガスに置換して充填する方法
としては、被溶接物１０を固定した後グローブボックス
２の排出孔２１から、真空ポンプ等の手段によって内部
にある空気を排出しながら、注入孔２２から注入する方
法、前記注入孔２２から強制的に注入して前記排出孔２
１から強制排出させる方法等がある。
グローブボックス２の内部が完全に前記不活性ガスに置
換された後、レーザー発振器４にレーザー（図示せず）
を発生させ、該レーザーをグローブボックス２まで誘導
、集光レンズ（図示せず）によってエネルギー密度を高
めたレーザービーム４１を得る。該レーザービーム４１
をウィービング装置（図示せず）によって所望の幅（例
えば１龍）ウィービングさせる一方、被溶接物１０を前
記溶接台３に固定した状態で走行装置（図示せず）に搭
載し、開先１０ａに前記レーザービーム４１が照射可能
に走行させる。該レーザービーム４１の照射によって溶
融・生成したシリコンの溶湯が開先１０ａをルート側か
ら埋めて行くので、該シリコンの溶湯が冷却すると、左
右から突き合わされている被溶接物１０同士が一体化さ
れる。なお、角度調節可能なガスノズル５によって調圧
された不活性ガス（例えばアルゴンガス）５１を前記シ
リコンの溶湯に吹き付けると、該溶湯は確実に開先１０
ａのルート側に押し込まれるので、被溶接物１０同士の
溶接は一層確実となる。上記手段による溶接では溶接線
表面が若干凹んだ形状となる。この状態でも充分な継手
強度が得られているが、前記凹み部を肉盛することも可
能である。すなわちホッパー６に投入されているシリコ
ン粉末（粒径１１００ａの多結晶質粉末）６１を前記凹
み部に散布しておき、レーザービーム４１を照射すると
、該シリコン粉末６１が溶融すると共に凹み部が部分的
に溶融して両方が融合されるので、凹みが解消されて外
観が改善される。しかも溶接部の断面積が増加するので
継手強度が向上する。なお、必要ならば肉盛溶接部を研
削して平坦に加工しても良い。そして、肉盛溶接のとき
には前記ガスノズル５から不活性ガス５１を吹き付けな
いほうが好ましい。上記した溶接において器具の調節等
が必要となったときには、グローブボックス２に設けた
操作用グローブ２３に手を入れて必要な調節をすること
が出来る。
溶接終了後もグローブボックス２の内部は、被溶接物ｌ
Ｏの温度が少なくともシリコンの酸化または窒化温度以
下に冷却するまでは、前記不活性ガスの雰囲気の状態が
維持されなければならない。必要であれば溶接台３に水
冷等の強制冷却の機能を持たせても良い。雰囲気温度が
前記温度以下まで冷却すると、不活性ガスの注入を停止
しても良いし、冷却を促進する目的で継続することも出
来る。被溶接物１０は冷却した後、搬出入口（図示せず
）より取り出される。
以上のようにして溶接される溶接構造物１は不活性ガス
雰囲気下でレーザービーム４１が照射されて溶接される
ため、外観が美麗でしかも継手強度も充分に高い。
なお、第２図と第３図においては平板の突き合わせ溶接
について説明したが、重ね溶接、隅肉溶接等も同様に可
能であり、被溶接物１０の形状、開先１０ａ等について
も特に制限を受けるものではないので、第１図に示すよ
うな溶接構造物１の製造も容易に行うことが出来るもの
である。
ところで、本発明の溶接構造物１に用いるシリコンは、
単結晶質、多結晶質、非晶質の何れであっても良く、部
分的に石英等との異種溶接とす。
ることも可能である。そして、溶接部をシールドしたり
、シリコンの溶湯を開先のルート側に押し込むために使
用するガスとしてはアルゴンガスの他にもヘリウムガス
、ネオンガス等のようにシリコンと反応して脆化するこ
とのない不活性ガスを用いることが出来る。高価なヘリ
ウムガスを使用するときは回収装置を設けるのが好まし
い。溶接の熱源としてはレーザーが使用し易いが、電子
ビームであっても良い。レーザーの場合はガスレーザー
（Ｃ０２レーザー等）であっても良いし、固体レーザー
（ＹＡＧレーザー等）であっても良い。レーザー等によ
って生成したシリコンの溶湯を、所望の位置に強制的に
移動させるために設置するガスノズル５は、０．１〜５
ｋｇ ／ ｃＪ程度の圧力調節が可能で、かつ角度調
節も可能なものであることが望ましい。溶加材として用
いるシリコン粉末６１としては、通常被溶接物１０と同
一成分のものが１〜５００１１園の粒径に調節されて使
用される。そして、シリコン粉末θ１は、溶接部に散布
して用いるほか、レーザービーム４１の照射部に直接吹
き込む等の手段によって送り込ことも可能である。また
、溶湯を容易に生成するため、被溶接物１０の表面にＳ
ｉＯ膜を形成しても良い。被溶接物１０の表面のエツチ
ングは、例えば数％〜数十％のフッ酸に数分〜数十分浸
漬して行うことが出来る。被溶接物１０の表面に形成す
るＳｉＯ膜の好ましい厚みは開先１０ａの形状にもよる
が、一般には数Ａ〜数十人の範囲である。
この範囲にＳｉＯ膜を形成するためには塩酸酸性過酸化
水素水中に２０分程度浸漬したり、オゾンガス雰囲気下
で数分曝されても良い。このように開先１０ａの端面に
５ｉ０１１ｕを形成すると、該ＳｉＯ膜は比較的低温度
で分解溶融するようになる共に、レーザービーム４１が
照射された時、金属光沢を呈しているときに比べ、レー
ザービーム４１の反射が著しく少なくなるので加熱効率
が向上するメリットもある。Next, the present invention will be explained in detail based on an illustrated embodiment. 1 in the figure is an example of the welded structure according to the present invention, which is a jig for supporting a semiconductor material such as a silicon wafer, and includes a center support member 11 made of polycrystalline silicon and two Side support members 12 are integrally assembled by welding to predetermined positions of horizontal plates 13 provided on the left and right sides. The above-mentioned members are mainly welded by fillet welding, and grooves 1 are formed in the center support member 11 and the side support members 12.
1a and 112a are respectively provided, and the structure is such that it can support the silicon wafer etc. so that no external force acts on it even if it undergoes a thermal cycle. An example of a specific means for obtaining the welded structure 1 will be explained using FIGS. 2 and 3. When silicon is exposed to the atmosphere at high temperatures, it oxidizes or nitrides and becomes brittle, so welding must be done under an inert gas atmosphere that will not react with the silicon and cause it to become brittle. For this reason, the object to be welded (for example, a flat plate with a thickness of 5 mm) 10 made of silicon is a sealed container with excellent airtightness filled with an inert gas (for example, argon gas).
For example, it is welded inside the glove box 2. If oil or fat is attached to the surface of the workpiece 10, it may cause welding defects. Therefore, before welding, the object to be welded 10 is boiled in, for example, an alkaline soap solution (such as a soap solution containing alkylbenzenesulfonic acid as a main ingredient) to remove the oil or fat. After saponifying the bones, they were washed with pure water and dried. The workpiece 10 subjected to such pretreatment is provided in the glove box 2.
For example, it is fixed on a stainless steel welding table 3 with a fixture 31 with the gap of the I groove LOa adjusted to 0 to 1.0-s. As a method of replacing and filling the air in the glove box 2 with the inert gas that does not react with silicon and cause embrittlement, after the object to be welded 10 is fixed, a vacuum A method of injecting from the injection hole 22 while discharging the air inside by means such as a pump, and a method of forcibly injecting from the injection hole 22 and discharging the air inside the exhaust hole
There is a method of forcibly discharging from 1. After the inside of the glove box 2 is completely replaced with the inert gas, a laser (not shown) is activated in the laser oscillator 4.
is generated, the laser is guided to the glove box 2, and a laser beam 41 with increased energy density is obtained using a condensing lens (not shown). The laser beam 41
is weaved to a desired width (for example, 1 dragon) by a weaving device (not shown), while the workpiece 10 is fixed to the welding table 3 and mounted on a traveling device (not shown), and is weaved into the groove 10a. The laser beam 41 is caused to travel so as to be irradiated. The molten silicon melted and generated by the irradiation of the laser beam 41 fills the groove 10a from the root side, so when the molten silicon cools down, the objects 10 to be welded that are butted against each other from the left and right are integrated. Ru. Note that when an inert gas (for example, argon gas) 51 whose pressure is regulated by the angle-adjustable gas nozzle 5 is sprayed onto the molten silicon, the molten metal reliably forms the groove 10.
Since it is pushed into the root side of a, welding of the objects to be welded 10 becomes even more reliable. When welding by the above method, the surface of the weld line becomes slightly concave. Sufficient joint strength is obtained even in this state, but it is also possible to build up the recessed portion. That is, when the silicon powder (polycrystalline powder with a particle size of 1100a) 61 put into the hopper 6 is scattered in the recessed portion and the laser beam 41 is irradiated, the silicon powder 61 is melted and the recessed portion is partially removed. The dents are eliminated and the appearance is improved as both are fused together. Moreover, since the cross-sectional area of the welded portion increases, the strength of the joint improves. Note that, if necessary, the overlay welded portion may be ground to make it flat. It is preferable not to spray the inert gas 51 from the gas nozzle 5 during overlay welding. When it becomes necessary to adjust the equipment during the above-described welding, the user can put his/her hand into the operating glove 23 provided in the glove box 2 and make the necessary adjustments. Even after welding is completed, the inside of the glove box 2 remains unattended.
The inert gas atmosphere must be maintained until the temperature of O cools to at least the oxidation or nitridation temperature of silicon. If necessary, the welding table 3 may be provided with a forced cooling function such as water cooling. Once the ambient temperature has cooled to below the above temperature, injection of the inert gas may be stopped or may be continued for the purpose of promoting cooling. After the workpiece 10 has been cooled, it is taken out from a carry-in/outlet (not shown). Since the welded structure 1 welded as described above is welded by being irradiated with the laser beam 41 in an inert gas atmosphere, it has a beautiful appearance and a sufficiently high joint strength. Although butt welding of flat plates is explained in FIGS. 2 and 3, lap welding, fillet welding, etc. are also possible, and there are no particular restrictions on the shape of the workpiece 10, the groove 10a, etc. Therefore, it is possible to easily manufacture a welded structure 1 as shown in FIG. 1. By the way, the silicon used for the welded structure 1 of the present invention is
It may be monocrystalline, polycrystalline, or amorphous, and may be partially dissimilar welded with quartz or the like. It is also possible to In addition to argon gas, there are other gases used to shield the welding area and push the molten silicon into the root of the groove, such as helium gas and neon gas, which react with silicon and become brittle. It is possible to use an inert gas without oxidation. When using expensive helium gas, it is preferable to provide a recovery device. A laser is easily used as a heat source for welding, but an electron beam may also be used. In the case of a laser, it may be a gas laser (such as a C02 laser) or a solid laser (such as a YAG laser). The gas nozzle 5 installed to forcibly move the molten silicon produced by a laser or the like to a desired position has a diameter of 0.1 to 5.
It is desirable that the pressure can be adjusted on the order of kg/cJ and that the angle can also be adjusted. As the silicon powder 61 used as the filler material, one having the same composition as the welded object 10 is usually used, and the particle size is adjusted to a particle size of 1 to 50,011 degrees. In addition to being used by scattering the silicon powder θ1 on the welding part, it is also possible to feed it by means such as directly blowing it into the irradiated part of the laser beam 41. Moreover, in order to easily generate molten metal, S is added to the surface of the workpiece 10 to be welded.
An iO film may also be formed. Etching the surface of the object to be welded 10 can be performed, for example, by immersing it in several percent to several tens of percent hydrofluoric acid for several minutes to several tens of minutes. The preferred thickness of the SiO film formed on the surface of the workpiece 10 depends on the shape of the groove 10a, but is generally in the range of several A to several tens of A. In order to form a SiO film in this range, it may be immersed in hydrochloric acid and hydrogen peroxide for about 20 minutes, or it may be exposed for several minutes in an ozone gas atmosphere. When 5i011u is formed on the end face of the groove 10a in this way, the SiO film decomposes and melts at a relatively low temperature, and when irradiated with the laser beam 41, compared to when it exhibits metallic luster, Since the reflection of the laser beam 41 is significantly reduced, there is also the advantage that heating efficiency is improved.
以上説明したように本発明の溶接構造物は、石英ガラス
を使用した治具に比べ、繰り返し熱サイクルを受けても
脆化することがないため、長期間に渡って安定した使用
が可能である。しかも、構造物の形状に殆ど制限がない
ため、形状のデザインが自在であり、治具に載置するシ
リコンウェーハ等に外力が作用しない構造にすることも
容易である。従って、所望成分の拡散工程においてもシ
リコンウェーハ等には熱歪みが残留しないので、不良率
が大きく減少する。また、従来の嵌合組み立ての治具で
は洗浄したとき溶剤が滲み出て来ると云う問題点があっ
たが、溶接によって組み立てる本発明の構造物にはこの
ような欠点もない。
また、上記溶接構造物の製造方法は酸化、窒化等して脆
化し易い特性のシリコンの溶接を可能にするものである
から、従来考えられもしなかったシリコンの半導体分野
等での応用範囲を大きく拡大することを可能とするもの
であり、その効果は甚大なものである。As explained above, compared to jigs using quartz glass, the welded structure of the present invention does not become brittle even when subjected to repeated heat cycles, so it can be used stably for a long period of time. . Moreover, since there are almost no restrictions on the shape of the structure, the shape can be freely designed, and it is easy to create a structure in which no external force is applied to the silicon wafer or the like placed on the jig. Therefore, no thermal strain remains in the silicon wafer etc. even during the diffusion process of desired components, and the defective rate is greatly reduced. Further, while conventional fitting assembly jigs had a problem in that solvent oozed out when they were cleaned, the structure of the present invention, which is assembled by welding, does not have such a drawback. In addition, since the method for manufacturing the welded structure described above makes it possible to weld silicon, which is prone to embrittlement due to oxidation, nitridation, etc., it has expanded the scope of application of silicon in the semiconductor field, which was previously unimaginable. It makes it possible to expand, and its effects are enormous.
第１図は溶接構造物例を示す斜視図、第２図は溶接構造
物の製造方法を示す説明図、第３図は第２図の要部を示
す説明図である。
１・・・溶接構造物（治具）、
１０・・・被溶接物、
１０ａ・・・開先、
１１・・・センター支持部材、
１２・・・サイド支持部材、
１３・・・横板、
２・・・グローブボックス、
２１・・・排出孔、
２２・・・注入孔、
２３・・・操作用グローブ、
３・・・溶接台、
４・・・レーザー発振器、
４１・・・レーザービーム、
５・・・ガスノズル、
８・・・ホッパー
６１・・・シリコン粉末。FIG. 1 is a perspective view showing an example of a welded structure, FIG. 2 is an explanatory view showing a method of manufacturing the welded structure, and FIG. 3 is an explanatory view showing the main part of FIG. 2. DESCRIPTION OF SYMBOLS 1... Welding structure (jig), 10... Welded object, 10a... Groove, 11... Center support member, 12... Side support member, 13... Horizontal plate, 2... Glove box, 21... Discharge hole, 22... Injection hole, 23... Operating glove, 3... Welding table, 4... Laser oscillator, 41... Laser beam, 5... Gas nozzle, 8... Hopper 61... Silicon powder.
Claims (4)
特徴とする溶接構造物。(1) A welded structure characterized by welding and integrating silicon members.
記載の溶接構造物。(2) The welded structure according to item 1, wherein the welded structure is a semiconductor wafer boat.
被溶接部材を当接もしくは近接し、該当接もしくは近接
部にレーザービームまたは電子ビームを照射して溶接す
ることを特徴とする溶接構造物の製造方法。(3) Two or more members to be welded are brought into contact with each other or in close proximity to each other in a closed container filled with inert gas, and welding is performed by irradiating a laser beam or an electron beam to the contacting or adjacent parts. Method of manufacturing welded structures.
がシリコンである第３項記載の溶接構造物の製造方法。(4) The method for manufacturing a welded structure according to item 3, wherein the closed container is a glove box and the member to be welded is silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63303725A JPH02151385A (en) | 1988-11-30 | 1988-11-30 | Weld structure and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63303725A JPH02151385A (en) | 1988-11-30 | 1988-11-30 | Weld structure and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02151385A true JPH02151385A (en) | 1990-06-11 |
Family
ID=17924514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63303725A Pending JPH02151385A (en) | 1988-11-30 | 1988-11-30 | Weld structure and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02151385A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04182092A (en) * | 1990-11-15 | 1992-06-29 | Matsushita Electric Works Ltd | Metallic case sealing device, sealing method and hermetically sealed relay |
| US6403914B1 (en) | 2000-11-08 | 2002-06-11 | Integrated Materials, Inc. | Method for welding silicon workpieces |
| US6573471B1 (en) * | 1997-12-19 | 2003-06-03 | Komatsu Ltd. | Welding method for semiconductor materials |
| US6617540B2 (en) * | 1999-04-15 | 2003-09-09 | Integrated Materials, Inc. | Wafer support fixture composed of silicon |
| US6617225B2 (en) | 2000-06-30 | 2003-09-09 | Integrated Materials, Inc. | Method of machining silicon |
| US7767318B2 (en) | 2006-11-21 | 2010-08-03 | United Technologies Corporation | Laser fillet welding |
| JP2011143416A (en) * | 2010-01-12 | 2011-07-28 | Ihi Corp | Laser welding method |
| JP2012037401A (en) * | 2010-08-09 | 2012-02-23 | Sankei Engineering:Kk | Inspection probe manufacturing method |
| WO2012096333A1 (en) * | 2011-01-13 | 2012-07-19 | 株式会社サンケイエンジニアリング | Method for manufacturing inspection probe |
| JP2012230129A (en) * | 2012-08-14 | 2012-11-22 | Sankei Engineering:Kk | Method for manufacturing inspection probe |
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|---|---|---|---|---|
| JPS4826986A (en) * | 1971-08-13 | 1973-04-09 | ||
| JPS6284888A (en) * | 1985-10-08 | 1987-04-18 | Toshiba Corp | Method and device for cutting welding by laser |
| JPS62144889A (en) * | 1984-04-06 | 1987-06-29 | Yoshiaki Arata | Vacuum laser beam welding method |
-
1988
- 1988-11-30 JP JP63303725A patent/JPH02151385A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4826986A (en) * | 1971-08-13 | 1973-04-09 | ||
| JPS62144889A (en) * | 1984-04-06 | 1987-06-29 | Yoshiaki Arata | Vacuum laser beam welding method |
| JPS6284888A (en) * | 1985-10-08 | 1987-04-18 | Toshiba Corp | Method and device for cutting welding by laser |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04182092A (en) * | 1990-11-15 | 1992-06-29 | Matsushita Electric Works Ltd | Metallic case sealing device, sealing method and hermetically sealed relay |
| US6573471B1 (en) * | 1997-12-19 | 2003-06-03 | Komatsu Ltd. | Welding method for semiconductor materials |
| US6617540B2 (en) * | 1999-04-15 | 2003-09-09 | Integrated Materials, Inc. | Wafer support fixture composed of silicon |
| US6617225B2 (en) | 2000-06-30 | 2003-09-09 | Integrated Materials, Inc. | Method of machining silicon |
| US6583377B2 (en) | 2000-11-08 | 2003-06-24 | Integrated Materials, Inc. | Welded silicon member |
| WO2002070184A1 (en) * | 2000-11-08 | 2002-09-12 | Integrated Materials, Inc. | Crack free welding of silicon |
| US6403914B1 (en) | 2000-11-08 | 2002-06-11 | Integrated Materials, Inc. | Method for welding silicon workpieces |
| US6838636B2 (en) | 2000-11-08 | 2005-01-04 | Integrated Materials, Inc. | Two heat sources for welding silicon |
| US7767318B2 (en) | 2006-11-21 | 2010-08-03 | United Technologies Corporation | Laser fillet welding |
| JP2011143416A (en) * | 2010-01-12 | 2011-07-28 | Ihi Corp | Laser welding method |
| JP2012037401A (en) * | 2010-08-09 | 2012-02-23 | Sankei Engineering:Kk | Inspection probe manufacturing method |
| WO2012096333A1 (en) * | 2011-01-13 | 2012-07-19 | 株式会社サンケイエンジニアリング | Method for manufacturing inspection probe |
| JP2012230129A (en) * | 2012-08-14 | 2012-11-22 | Sankei Engineering:Kk | Method for manufacturing inspection probe |
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