JPH02151023A - Device for manufacturing semiconductor crystal - Google Patents
Device for manufacturing semiconductor crystalInfo
- Publication number
- JPH02151023A JPH02151023A JP30527988A JP30527988A JPH02151023A JP H02151023 A JPH02151023 A JP H02151023A JP 30527988 A JP30527988 A JP 30527988A JP 30527988 A JP30527988 A JP 30527988A JP H02151023 A JPH02151023 A JP H02151023A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- susceptor
- cooling
- gaas
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000013078 crystal Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 6
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 21
- 238000001816 cooling Methods 0.000 abstract description 14
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 239000000112 cooling gas Substances 0.000 abstract description 10
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 9
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 241000238557 Decapoda Species 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- LTKWZIUEGOOERX-UHFFFAOYSA-N trihydridoarsenic(.1+) Chemical compound [AsH3+] LTKWZIUEGOOERX-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体結晶の製造装置に関し、特に化合物半
導体の気相成長装置に使用するサセプタの構造に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor crystal manufacturing apparatus, and more particularly to the structure of a susceptor used in a compound semiconductor vapor phase growth apparatus.
化合物半導体、特に■−ｖ族化合物半導体の結晶成長方
法として気相成長法は良く知られており、中でもＭＯＣ
ＶＤ法は特に最近注目されている結晶成長方法である。The vapor phase growth method is well known as a crystal growth method for compound semiconductors, especially ■-V group compound semiconductors, and among them, MOC
The VD method is a crystal growth method that has been attracting particular attention recently.
第３図は従来のＭＯＣＶＤ装置の実際に結晶成長してい
る部分の概略的構造を示した側面図である。以下、Ｇａ
Ａｓ基板上にＧａＡｓ及びＡｌＧａＡｓ層を成長メさせ
る装置を例に説明する。図中１はＧａＡｓ基板、２はＧ
ａＡｓ基板１を支え、かつ高周波加熱される材質、例え
ばカーボンの様なものを使ったサセプタであり、３は石
英反応管、４は石英反応管３の外部からサセプタ２を加
熱するための高周波コイル、５は成長に使用する原材料
ガス、例えばトリメチルガリウム（ＴＭＡ）、トリメチ
ルアルミニウム（ＴＭＡ） 、アルシン（ＡｓＨ３）等
であり、さらに６はサセプタ２を支えるためのサセプタ
ホルダである。FIG. 3 is a side view showing a schematic structure of a portion of a conventional MOCVD apparatus where crystal growth is actually performed. Below, Ga
An example of an apparatus for growing GaAs and AlGaAs layers on an As substrate will be explained. In the figure, 1 is a GaAs substrate, 2 is a G
A susceptor is made of a material such as carbon that supports the aAs substrate 1 and is heated by high frequency. 3 is a quartz reaction tube, and 4 is a high frequency coil for heating the susceptor 2 from the outside of the quartz reaction tube 3. , 5 are raw material gases used for growth, such as trimethyl gallium (TMA), trimethyl aluminum (TMA), arsine (AsH3), etc., and 6 is a susceptor holder for supporting the susceptor 2.
次に上記従来のＭＯＣＶＤ装置で実際にＧａＡｓ基板上
にＧａＡｓ及びＡｌＧａＡｓ層をエピタキシャル成長さ
せる方法について述べる。Next, a method of actually epitaxially growing GaAs and AlGaAs layers on a GaAs substrate using the above conventional MOCVD apparatus will be described.
ＧａＡｓ基板１をサセプタ２上に乗せ、石英反応管３の
外部から高周波誘導加熱により温度を上げる。サセプタ
２の温度、すなわちＧａＡｓ基板１の温度が、成長温度
である８００℃まで上がれば、石英反応管３内にマスフ
ローコントローラ（図示せず）で流量・コントロールさ
れたＴＭＧ及びＡｓＨ３ガス５を導入する。導入された
ＴＭＧ及びＡｓＨ３は熱により分解し、
Ｇａ （ＣＨ３）３ ＋ＡｓＨ３＋ＧａＡｓ↓＋３ＣＨ
４↑
なる反応でＧａＡｓ結晶が、Ｇ ａ Ａ ｓ基板１上に
エピタキシャル成長する。続いて、導入ガスを切り替え
ＴＭＡを導入する事により、同様に熱分解反応により、
Ａ Ｉ Ｇ ａ Ａ ｓ結晶がエピタキシャル成長する
。こうして、順次ガスの切替え及び流量制御を行なうこ
とにより、ＧａＡｓ−ＡｌＧａＡｓ層の多層エピタキシ
ャル成長層を得る事が出来る。A GaAs substrate 1 is placed on a susceptor 2, and its temperature is raised from the outside of the quartz reaction tube 3 by high-frequency induction heating. When the temperature of the susceptor 2, that is, the temperature of the GaAs substrate 1 rises to 800° C., which is the growth temperature, TMG and AsH3 gas 5 whose flow rate is controlled by a mass flow controller (not shown) are introduced into the quartz reaction tube 3. . The introduced TMG and AsH3 are decomposed by heat, resulting in Ga (CH3)3 +AsH3+GaAs↓+3CH
A GaAs crystal is epitaxially grown on the GaAs substrate 1 by the reaction 4↑. Next, by switching the introduced gas and introducing TMA, a similar thermal decomposition reaction was carried out.
A I Ga As crystal is epitaxially grown. In this manner, by sequentially switching the gas and controlling the flow rate, a multilayer epitaxial growth layer of GaAs-AlGaAs layers can be obtained.
従来の半導体結晶の製造装置は以上の様に、結晶成長が
熱分解反応であるため、成長速度を制御する場合、温度
及び流量を変える事のみにより行っていた。しかしなが
ら温度も、流量もその制御機構からして、応答速度が遅
い為、数原子層を多層構造にエピタキシャル成長する、
いわゆる超格子の成長や、逆に特に厚いエピタキシャル
層を得る場合、あるいは濃度制御範囲の広いエピタキシ
ャル層を得る場合には、温度と流量のコントロールだけ
では制御し切れないなどの問題があった。As described above, in conventional semiconductor crystal manufacturing equipment, since crystal growth is a thermal decomposition reaction, the growth rate is controlled only by changing the temperature and flow rate. However, due to the control mechanism for temperature and flow rate, the response speed is slow, so epitaxial growth of several atomic layers into a multilayer structure is required.
When growing a so-called superlattice, or conversely, when obtaining a particularly thick epitaxial layer, or when obtaining an epitaxial layer with a wide concentration control range, there are problems such as not being able to control the temperature and flow rate alone.
この発明は上記のような問題点を解消するためになされ
たもので、数原子層オーダの薄いエピタキシャル層から
厚いエピタキシャル層までの膜厚制御ができ、しかもエ
ピタキシャル層の成長方向に急峻な組成変化をつけたり
、連続的な変化を再現性良く制御したりすることが出来
る半導体結晶の製造装置を得る事を目的としている。This invention was made to solve the above-mentioned problems, and it is possible to control the film thickness from a thin epitaxial layer on the order of several atomic layers to a thick epitaxial layer, and moreover, it is possible to control the thickness of the epitaxial layer from a thin epitaxial layer on the order of several atomic layers to a thick epitaxial layer. The purpose of the present invention is to obtain an apparatus for manufacturing semiconductor crystals that can control continuous changes with good reproducibility.
この発明に係る半導体結晶の製造装置は、基板を設置す
るサセプタ内部に、外部からガスを導入し強制冷却を行
なうことのできる機構を設けたものである。A semiconductor crystal manufacturing apparatus according to the present invention is provided with a mechanism that can introduce gas from the outside and perform forced cooling inside a susceptor in which a substrate is placed.
この発明においては、上記強制冷却機構により、ＧａＡ
ｓ基板を直接、あるいは間接的に冷却用ガスにより冷却
する事により、ＡｓＨ３やＴＭＧ等の半導体用材料ガス
の流量や、外部からのＲＦ加熱温度を変える事なくエピ
タキシャル成長速度をコントロールすることができる。In this invention, the forced cooling mechanism allows GaA
By directly or indirectly cooling the s-substrate with a cooling gas, the epitaxial growth rate can be controlled without changing the flow rate of semiconductor material gas such as AsH3 or TMG or the external RF heating temperature.
以下この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図において、１はＧａＡｓ基板、２はサセプタ、６
はサセプタ２に形成した空洞であり、７は上記空洞θ内
の冷却用ガス導入管、８は上記導入ガスの出口である。In FIG. 1, 1 is a GaAs substrate, 2 is a susceptor, and 6
is a cavity formed in the susceptor 2, 7 is a cooling gas introduction pipe in the cavity θ, and 8 is an outlet for the introduced gas.
次に動作について説明する。Next, the operation will be explained.
本実施例による半導体結晶の製造装置でエピタキシャル
成長を行なうには、まずＧａＡｓ基板１をサセプタ２に
設定する。このサセプタ２を反応管（図示せず）の中へ
設定し外部からのＲＦ加熱（図示せず）によりサセプタ
２を６５０℃に加熱スル。ＴＭＧ及びＡｓＨ３をマスフ
ローコントローラにより一定に流量コントロールしなが
ら反応管内へ導入する。所定の膜厚のＧａＡｓエピタキ
シャル層が成長すれば、冷却用ガス導入管７より水素ガ
スを導入する。ＧａＡｓ基板１は導入された水素ガスに
より、急速に冷却される。エピタキシャル成長反応は上
述の様にＴＭＧとＡｓＨ３の熱分解反応である為、Ｇ
ａ Ａ ｓ基板１の温度が低下すると、それに伴って成
長速度も低下する。この状態でＴＭＡを導入すればＡｌ
ＧａＡｓ層が、やはり遅い成長速度で成長する。こうし
て、他の設定条件は変えずに材料ガスのＯＮ、ＯＦＦの
みで非常に薄い数原子層オーダの多層膜、いわゆる超格
子層を容易に形成できる。続いて、冷却用ガスを切れば
、Ｇ ａ Ａ ｓ基板の温度が上昇し、それに伴って成
長速度も速くなる。To perform epitaxial growth using the semiconductor crystal manufacturing apparatus according to this embodiment, first, a GaAs substrate 1 is set as a susceptor 2. This susceptor 2 was set in a reaction tube (not shown), and the susceptor 2 was heated to 650° C. by external RF heating (not shown). TMG and AsH3 are introduced into the reaction tube while controlling the flow rate at a constant level using a mass flow controller. When the GaAs epitaxial layer has grown to a predetermined thickness, hydrogen gas is introduced from the cooling gas introduction pipe 7. The GaAs substrate 1 is rapidly cooled by the introduced hydrogen gas. As mentioned above, the epitaxial growth reaction is a thermal decomposition reaction between TMG and AsH3, so G
When the temperature of the a As substrate 1 decreases, the growth rate also decreases accordingly. If TMA is introduced in this state, Al
The GaAs layer also grows at a slow growth rate. In this way, a very thin multilayer film on the order of several atomic layers, a so-called superlattice layer, can be easily formed by simply turning on and off the material gas without changing other setting conditions. Subsequently, when the cooling gas is turned off, the temperature of the GaAs substrate increases, and the growth rate increases accordingly.
このよ゛うな本実施例では、成長層の膜厚制御パラメー
タが、これまではＲＦ加熱と、材料ガス流量の２項目で
あったが、基板冷却機構が増えたため、エピタキシャル
成長の膜厚制御の自由度が増え、数原子層のオーダの薄
いエピタキシャル層から厚いエピタキシャル層まで幅広
く、シかも安定に成長させることができる。In this example, the film thickness control parameters for the growth layer were previously two items: RF heating and material gas flow rate, but since the substrate cooling mechanism has been increased, there is greater freedom in controlling the film thickness during epitaxial growth. The growth rate increases, and a wide range of layers from thin epitaxial layers on the order of a few atomic layers to thick epitaxial layers can be grown stably.
なお、上記実施例ではＧａＡｓ基板を直接冷却用ガスで
冷却する構造について述べたが、第２図の本発明の第２
の実施例に示す様に、冷却容器９を設け、冷却用ガスを
クローズＦ系とし、間接的に冷却する様にしても良い。In the above embodiment, a structure was described in which the GaAs substrate was directly cooled with cooling gas, but the second embodiment of the present invention shown in FIG.
As shown in the embodiment, a cooling container 9 may be provided, and the cooling gas may be a closed F system, so that indirect cooling may be performed.
この時、冷却用ガスは水素にかぎらず、何を使用しても
良い。At this time, the cooling gas is not limited to hydrogen, and any gas may be used.
このように、サセプタ内に冷却容器を設けた場合には、
ＧａＡｓ基板に冷却用ガスが直接接触することがなく、
冷媒を自由に選ぶ事が出来る。冷却効果をさらに上げる
事が出来、しかも冷却容器により基板の面内温度分布が
少なくなり、均一なエピタキシャル層が得られるという
効果もある。In this way, when a cooling container is provided inside the susceptor,
Cooling gas does not come into direct contact with the GaAs substrate,
You can freely choose the refrigerant. The cooling effect can be further improved, and the cooling container also has the effect of reducing the in-plane temperature distribution of the substrate, resulting in a uniform epitaxial layer.
また上記実施例ではＧａＡｓ−ＡｌＧａＡｓ系の竪型Ｍ
ＯＣＶＤ装置に使用する場合について述べたが、本発明
はそれのみに限られるものではなく、他の■−Ｖ族化合
物やＩＩ−ＶＩ族化合物半導体とその混晶についても同
様に適用でき、また熱分解反応による気相成長法を使用
する装置であれば何にでも適応出来る事は明らかである
。In addition, in the above embodiment, a GaAs-AlGaAs-based vertical M
Although the case of use in an OCVD device has been described, the present invention is not limited to this, and can be similarly applied to other ■-V group compounds, II-VI group compound semiconductors, and mixed crystals thereof. It is clear that the present invention can be applied to any device that uses a vapor phase growth method using a decomposition reaction.
以上の様に、この発明によれば、基板を設置するサセプ
タ内に外部からのガスを導入し強制冷却する機構を設け
たので、成長層の膜厚制御パラメータとしてＲＦ加熱と
材料ガス流量の２つに基板の冷却温度を加えることがで
き、膜厚制御の自由度が増え、数原子層のオーダの薄い
エビ層から厚いエビ層まで幅広く、安定に成長出来る効
果がある。As described above, according to the present invention, a mechanism for forced cooling by introducing gas from the outside into the susceptor in which the substrate is installed is provided, so that two parameters for controlling the thickness of the growth layer are RF heating and material gas flow rate. The cooling temperature of the substrate can be added to the temperature, which increases the degree of freedom in film thickness control, and has the effect of stably growing a wide range of layers, from thin shrimp layers on the order of a few atomic layers to thick shrimp layers.
第１図は本発明の一実施例による半導体結晶の製造装置
のサセプタを示す断面図、第２図は本発明の他の実施例
を示す断面図、第３図は従来のサセプタ構造を示す概略
断面図である。
１はＧａＡｓ基板、２はサセプタ、３は石英反応管、４
は高周波コイル、５は原材料ガス、６はサセプタホルダ
、６は空洞、７はガス導入管、８はガス出口である。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a cross-sectional view showing a susceptor of a semiconductor crystal manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing another embodiment of the present invention, and FIG. 3 is a schematic diagram showing a conventional susceptor structure. FIG. 1 is a GaAs substrate, 2 is a susceptor, 3 is a quartz reaction tube, 4
5 is a high frequency coil, 5 is a raw material gas, 6 is a susceptor holder, 6 is a cavity, 7 is a gas introduction pipe, and 8 is a gas outlet. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
し、該基板上に半導体材料ガスを導入して、熱分解反応
によりエピタキシャル成長を行なわせる半導体結晶の製
造装置において、 半導体基板を載置するサセプタ部は内部に空洞を有し、 該空洞に外部からガスを導入する機構を有することを特
徴とする半導体結晶の製造装置。(1) A susceptor on which a semiconductor substrate is placed in a semiconductor crystal manufacturing apparatus that heats a semiconductor substrate placed on the susceptor from the outside, introduces a semiconductor material gas onto the substrate, and performs epitaxial growth through a thermal decomposition reaction. 1. An apparatus for manufacturing a semiconductor crystal, characterized in that the part has a cavity therein, and has a mechanism for introducing gas into the cavity from the outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30527988A JPH02151023A (en) | 1988-12-01 | 1988-12-01 | Device for manufacturing semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30527988A JPH02151023A (en) | 1988-12-01 | 1988-12-01 | Device for manufacturing semiconductor crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02151023A true JPH02151023A (en) | 1990-06-11 |
Family
ID=17943186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30527988A Pending JPH02151023A (en) | 1988-12-01 | 1988-12-01 | Device for manufacturing semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02151023A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7368014B2 (en) | 2001-08-09 | 2008-05-06 | Micron Technology, Inc. | Variable temperature deposition methods |
-
1988
- 1988-12-01 JP JP30527988A patent/JPH02151023A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7368014B2 (en) | 2001-08-09 | 2008-05-06 | Micron Technology, Inc. | Variable temperature deposition methods |
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