JPH02144976A - Wavelength-variable light-emitting element - Google Patents

Abstract

PURPOSE:To make this element small-sized by a method wherein a plurality of active layers which emit light at different wavelengths are formed inside an identical element and a plurality of gates are formed inside a common substrate supporting the active layers. CONSTITUTION:A P-type gate 3 filled inside an N-type substrate 1 is controlled by an external control system 9. A positive voltage is applied to an electrode 1; a negative voltage is applied to an electrode 1'; the negative voltage is applied to a P-type gate 3' (part of A); then a negative electric field is generated in its circumference. Accordingly, an electron supplied from the electrode 1' is repelled and flows toward the P-type gate 3; when it is passed through the P-type gate 3, it is coupled with a hole supplied from the electrode 1 at an active layer 6 and emits light at its intrinsic light-emitting wavelength. When the negative voltage is applied to the P-type gate 3 (part of B), the electron flows toward the P-type gate 3', is coupled with the hole at an active layer 6' and emits light at its intrinsic light-emitting wavelength. In addition, when a voltage to the P-type gates 3, 3' is zero, the electron is passed around the P-type gates 3, 3' and is coupled with the hole; a mixed color can be obtained. Thereby, it is possible to control a light-emitting wavelength by a gate which can be controlled externally.

Description

【発明の詳細な説明】 の１ 本発明は同一素子にて、光の波長を変えることが出来る
波長可変発光素子に関し、メディアの媒体（表示用）、
情報の記憶媒体への書込、消去などに利用できる。[Detailed Description of the Invention] No. 1 The present invention relates to a wavelength tunable light emitting element that can change the wavelength of light in the same element,
It can be used to write and erase information on storage media.

従」Ｊ口支術− 従来、この種の異なる波長で発光する発光素子は、異な
る波長を出す個々の素子の集合体で構成の ところが、上記の集合型のものでは、例えば、記憶媒体
への書込、消去などでは、異なる波長を出す発光部が離
隔しているために小型化することは困難であり、また表
示媒体として考えると解像度が悪くなり使いにくいとい
う欠点があった。Traditionally, this type of light-emitting element that emits light at different wavelengths is composed of an aggregate of individual elements that emit different wavelengths, but in the above-mentioned aggregate type, e.g. For writing, erasing, etc., it is difficult to miniaturize because the light emitting parts that emit different wavelengths are separated from each other, and when considered as a display medium, the resolution is poor and it is difficult to use.

の 本発明は上記の問題点を解決するために、同一素子内に
異なる組成を持つ換言すれば異なる波長出す複数の領域
（活性層）を形成し、両領域に共通の基板内に外部から
の信号により注入する電流域を変える複数のゲートを設
けたことを特徴とする。In order to solve the above-mentioned problems, the present invention forms a plurality of regions (active layers) having different compositions and emitting different wavelengths in the same element, and injects external light into a substrate common to both regions. It is characterized by the provision of a plurality of gates that change the current range to be injected depending on the signal.

作ｌ− 素子内部に特殊なゲート、および異なる組成（換言すれ
ば異なる波長を発光する）の活性層を有していることで
、外部信号によりゲートにかける電圧を制御することで
、注入される電流領域をかえて、選択された活性領域に
より希望する波長の発光を得ることが出来る。- By having a special gate inside the device and active layers with different compositions (in other words, they emit light at different wavelengths), the voltage applied to the gate is controlled by an external signal, allowing the injection to be performed. By changing the current region, it is possible to obtain light emission of a desired wavelength from a selected active region.

また、同一素子内に、集積することが出来るので装置の
小型化が可能になる。Furthermore, since they can be integrated into the same element, it is possible to downsize the device.

支敷肚 第１図に、本考案の一実施例の発光素子の断面図を示す
。図において、１，１°は電極、２はＮ型基板、３．３
’はＮ型基板２中に埋設されたＰ型ゲー）、４．４’は
Ｎ型基板２上のＮ型バッファ層、５，５゛はＰ型ＧａＡ
ｓクラッド層、６，６′はＮ型バッファ層４，４′とＰ
型クラッド層５゜５′に挟持された異なる発光波長の活
性層、７は分離溝、８は絶縁膜である。ここで、Ｎ型バ
ッファ層４．４’、Ｐ型クラッド層５，５゛は、活性層
６，６′の組成、換言すれば発光する波長により異なる
。FIG. 1 shows a sectional view of a light emitting device according to an embodiment of the present invention. In the figure, 1.1° is the electrode, 2 is the N-type substrate, 3.3
' is P-type GaA buried in N-type substrate 2), 4.4' is N-type buffer layer on N-type substrate 2, and 5,5' is P-type GaA
s cladding layer, 6, 6' are N-type buffer layers 4, 4' and P
Active layers having different emission wavelengths are sandwiched between mold cladding layers 5° 5', 7 is a separation groove, and 8 is an insulating film. Here, the N-type buffer layer 4.4' and the P-type cladding layer 5, 5' differ depending on the composition of the active layer 6, 6', in other words, the wavelength of light emission.

次に動作原理について説明する。Ｎ型基板２内に埋め込
まれたＰ型ゲート３は、第２図に示されるように、外部
制御系９により制御されている。Next, the operating principle will be explained. The P-type gate 3 embedded in the N-type substrate 2 is controlled by an external control system 9, as shown in FIG.

今、電極１にプラス、電極１°にマイナスの電圧を印加
し、Ｐ型ゲート３′　（Ａの部分）に対して負の電圧を
かけるとその周囲には、負の電場が生じる。このため、
裏面側の電極１′から供給される負の電荷を持つ電子は
、反発されてＰ型ゲート３へ向かって流れ、Ｐ型ゲート
３を通過することにより、表面側の電極１から供給され
る正孔と活性層６において結合し、活性層６に固有の発
光波長で発光する。また、Ｐ型ゲー）３（Ｂの部分）に
対して負の電圧をかけると、上記と逆に、電子はＰ型ゲ
ート３′へ向かって流れ、Ｐ型ゲート３”を通過して電
極１から供給される正孔と活性層６゛において結合し、
活性層６′に固有の発光波長で発光する。さらに、Ｐ型
ゲー）３．３’への電圧がゼロの場合には電子がＰ型ゲ
ート３，３°の周囲を通過し、活性層６，６′において
正孔と結合して、活性層６，６′に固有の発光波長で発
光し、混合色が得られる。Now, when a positive voltage is applied to the electrode 1 and a negative voltage is applied to the electrode 1°, and a negative voltage is applied to the P-type gate 3' (portion A), a negative electric field is generated around it. For this reason,
The negatively charged electrons supplied from the electrode 1' on the back side are repelled and flow toward the P-type gate 3, and by passing through the P-type gate 3, the electrons with negative charges supplied from the electrode 1' on the front side are It combines with the hole in the active layer 6, and emits light at an emission wavelength specific to the active layer 6. Furthermore, when a negative voltage is applied to the P-type gate 3 (portion B), electrons flow toward the P-type gate 3' and pass through the P-type gate 3'' to the electrode 1. Combines with the holes supplied from the active layer 6',
It emits light at an emission wavelength specific to the active layer 6'. Furthermore, when the voltage to the P-type gate 3.3' is zero, electrons pass around the P-type gate 3.3°, combine with holes in the active layer 6, 6', and 6 and 6', and a mixed color is obtained.

上記実施例は、バッファ層、クラッド層、活性層がそれ
ぞれ２つの場合について説明したが、３つ以上であって
もよい。Although the above embodiments have been described with reference to the case where there are two buffer layers, two cladding layers, and two active layers, the number may be three or more.

また、表面側の電極１を各活性層６．６′に応じて分割
して選択的に電圧を印加するならば、分割溝７は必ずし
も必要ではない。Further, if the electrode 1 on the front side is divided according to each active layer 6, 6' and a voltage is applied selectively, the dividing groove 7 is not necessarily necessary.

髪」Δ肱敦 以上説明したように、この発明は同一素子内に異なった
組成を持つ活性層を有し、外部制御できるゲートにより
発光する波長を制御することが出来るようになる。これ
は、今までならば発光波長の異なる素子が数個と制御部
が存在することにより装置の大型化がさけられぬところ
であったが、コンパクトに仕上げることが出来ることを
意味する。As explained above, the present invention has active layers with different compositions within the same device, and the wavelength of light emitted can be controlled by an externally controllable gate. This means that up until now, the presence of several elements with different emission wavelengths and a control section would have forced the device to become larger, but now it can be made more compact.

４．４′・・・Ｎ型バッファ層、 ５．５′・・・Ｐ型クラッド層、 ６．６′・・・活性層、 ９・・・外部制御系。4.4'...N type buffer layer, 5.5′...P-type cladding layer, 6.6′...active layer, 9...External control system.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの発明の一実施例の波長可変発光素子の構造
断面図であり、第２図は結晶内部に埋め込まれたゲート
の構造例と外部制御系との関係を示した平面図である。 １．１′・・・電極、 ２・・・Ｎ型基板、 ３．３′・・・Ｐ型ゲート、FIG. 1 is a cross-sectional view of the structure of a wavelength tunable light emitting device according to an embodiment of the present invention, and FIG. 2 is a plan view showing the relationship between an example of the structure of a gate embedded inside a crystal and an external control system. . 1.1'... Electrode, 2... N type substrate, 3.3'... P type gate,

Claims (1)

【特許請求の範囲】[Claims] 同一素子内に、異なる波長で発光する複数の活性層を設
け、これら活性層を支持する共通基板内に、複数のゲー
トを形成したことを特徴とする波長可変発光素子。A wavelength tunable light emitting device characterized in that a plurality of active layers that emit light at different wavelengths are provided in the same device, and a plurality of gates are formed in a common substrate that supports these active layers.