JPH02138858A - Detecting device of gas - Google Patents
Detecting device of gasInfo
- Publication number
- JPH02138858A JPH02138858A JP30685088A JP30685088A JPH02138858A JP H02138858 A JPH02138858 A JP H02138858A JP 30685088 A JP30685088 A JP 30685088A JP 30685088 A JP30685088 A JP 30685088A JP H02138858 A JPH02138858 A JP H02138858A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- detection
- sensitive material
- layer
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 156
- 238000001514 detection method Methods 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims description 93
- 239000011247 coating layer Substances 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 5
- 239000012777 electrically insulating material Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000002344 surface layer Substances 0.000 abstract 2
- 229910004160 TaO2 Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- NQKXFODBPINZFK-UHFFFAOYSA-N dioxotantalum Chemical compound O=[Ta]=O NQKXFODBPINZFK-UHFFFAOYSA-N 0.000 abstract 1
- 238000004299 exfoliation Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 17
- 239000012212 insulator Substances 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000000059 patterning Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000005728 strengthening Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003014 reinforcing effect Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005056 compaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- -1 SnO□ Chemical class 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
［技術分野］
本発明は雰囲気中にガスが存在することを検知するガス
検出装置に関するものであって、更に詳細には、ＬＰガ
スや都市ガスのガス漏れ警報器として適用するのに適し
たガス検出装置に関するものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to a gas detection device that detects the presence of gas in an atmosphere, and more specifically, it is used as a gas leak alarm for LP gas or city gas. The invention relates to a gas detection device suitable for the application.
［従来技術］
本出願人は先に特開昭６１−１．９１９５３号に係る発
明を出願している。[Prior Art] The present applicant has previously applied for an invention related to JP-A-61-1.91953.
この発明は、第１図にみられるようにガス感応物質層１
５は絶縁体層１２、ヒータ等材料層１３及び被覆絶縁層
１４の一部面上にまたがって重ねられており、ガス感応
物質層１５はＳｎＯ□、Ｆｅ２Ｏ３、ＺｎＯ等の金属酸
化物（セラミック）半導体材料を蒸着、スパッタ、ＣＶ
Ｄ、イオンブレーティング法等により成膜されている。This invention provides a gas sensitive material layer 1 as shown in FIG.
Reference numeral 5 is stacked over a part of the insulating layer 12, the heater material layer 13, and the covering insulating layer 14, and the gas sensitive material layer 15 is made of metal oxide (ceramic) such as SnO□, Fe2O3, ZnO, etc. Vapor deposition, sputtering, CV of semiconductor materials
D. The film is formed by ion blating method or the like.
これらの金属酸化物はガス検出装置に組まれヒータ８Ｃ
により加熱されて検出動作を行うことになるが、低温で
成膜されたセラミックであるため加熱されるに伴ない膜
の焼きしまり（体積収縮）を起す。These metal oxides are incorporated into the gas detection device and heater 8C.
However, since the ceramic film is formed at a low temperature, the film shrinks (volume shrinkage) as it is heated.
絶縁層１２、ヒータ等材料層１３および被覆絶縁層１４
の材質は低温成膜であってもガス感応物質層１５よりは
ち密で収縮は小さい。Insulating layer 12, heater etc. material layer 13, and covering insulating layer 14
The material is denser than the gas-sensitive material layer 15 and shrinks less even if it is formed at a low temperature.
収縮率 １５＞１２．１３．１４
また熱膨張率はヒータ等材料層１３にｐｔ、絶縁体層１
２及び被覆絶縁層１４に５ｉｎ２を用いると熱膨張率１
．３＞１２．１４＞１５
であるため、検出動作時にガス感応物質層１５との界面
でずれを起しやすい。Shrinkage rate 15>12.13.14 Also, the thermal expansion coefficient is pt for heater material layer 13, insulator layer 1
2 and the covering insulating layer 14 has a thermal expansion coefficient of 1.
．． Since 3>12.14>15, displacement is likely to occur at the interface with the gas sensitive material layer 15 during the detection operation.
このようなことから、第１図の材料構成では第２図のご
とくハガレを生じ機能を害する欠点がある。For this reason, the material structure shown in FIG. 1 has the drawback of peeling as shown in FIG. 2, which impairs functionality.
又、ヒーター等材料層１３、被覆絶縁層１４のそれぞれ
の膜厚は０．１〜２μｍで可能であるが、好ましくは０
．５〜１μｍ程度である。ガス感応物質層１５の膜厚は
、０．０５〜２μｍで可能であるが、ガス感度及びパタ
ーン精度を考慮すると、０．２μｍ程度が好ましい。こ
の場合、第１図Ａは理想図であって、現実には第１図Ｂ
のようになり、ヒータ等材料層１３及び被覆絶縁層１４
の先端部１３’、１４’においてガス感応物質層１５の
段切れが発生しやすく、機能を害する欠点がある。Further, the thickness of each of the heater material layer 13 and the covering insulating layer 14 can be 0.1 to 2 μm, but preferably 0.1 to 2 μm.
．． It is about 5 to 1 μm. The thickness of the gas sensitive material layer 15 can be 0.05 to 2 μm, but in consideration of gas sensitivity and pattern accuracy, it is preferably about 0.2 μm. In this case, Figure 1 A is an ideal diagram, and in reality Figure 1 B
The heater etc. material layer 13 and the covering insulating layer 14
The gas-sensitive material layer 15 is easily broken at the tip portions 13' and 14', which has the disadvantage of impairing its function.
［目 的］
本発明では、前記ガス感応物質層がハガレをおこさない
ような又、ガス感応物質層の段切れが発生しないような
積層構造体とすることを目的とするものである。[Objective] The object of the present invention is to provide a laminated structure in which the gas-sensitive material layer does not peel off or break in the gas-sensitive material layer.
［構 成膜
本発明の１つは基板、前記基板上に設けられており検出
領域において互いに所定距離隔離して設けた少なくとも
一対の検出用リード、略前記検出用リードと並置して設
けられた少なくとも１個のヒータリード、前記検出領域
において前記少なくとも一対の検知用リードの夫々に接
触して設けられたガス感応物質層、を有しており、前記
ガス感応物質層の周囲は電気的絶縁性材料からなる被覆
層に覆われているか、もしくはガス感応物質層の上部周
囲に検出用リードが取付けられた構造を有しており、前
記ガス感応物質層がガスと接触反応することによりその
抵抗値変化としてガス検出を行なうことを特徴とするガ
ス検出装置であり、本発明のもう１つの発明は基板、前
記基板上に設けられており検出領域において互いに所定
距離隔離して設けた少なくとも一対の検出用リード、略
前記検出用リードと並置して設けられた少なくとも１個
のヒータリード、前記検出領域において前記少なくとも
一対の検知用リードの夫々に接触して設けられた２個の
ガス感応物質層、を有しており、かつ前記ガス感応物質
層の１つは、その周囲のみが電気的絶縁性材料からなる
被覆層に覆われているか、もしくはガス感応物質層の上
部周囲に検出用リードが取付けられた構造を有するガス
検出素子であり、前記ガス感応物質層のもう１個の方は
、その全面が電気的絶縁性材料からなる被覆層で完全に
被覆されており前記ガス検出素子の温度補償素子であり
、前記ガス感応物質層がガスと接触反応することにより
その抵抗値変化としてガス検出を行なうことを特徴とす
るガス検出装置である。[One of the constituent films of the present invention is a substrate, at least a pair of detection leads provided on the substrate and separated from each other by a predetermined distance in a detection region, and provided substantially in parallel with the detection leads. It has at least one heater lead, and a gas sensitive material layer provided in contact with each of the at least one pair of detection leads in the detection region, and the periphery of the gas sensitive material layer is electrically insulating. It is covered with a coating layer made of a material, or has a structure in which a detection lead is attached around the upper part of the gas-sensitive material layer, and the resistance value of the gas-sensitive material layer is increased by contact reaction with the gas. Another invention of the present invention is a gas detection device characterized in that gas detection is performed as a change in gas detection. at least one heater lead provided substantially in parallel with the detection lead; two gas-sensitive material layers provided in contact with each of the at least one pair of detection leads in the detection region; and one of the gas-sensitive material layers is covered only with a coating layer made of an electrically insulating material, or a detection lead is attached around the upper part of the gas-sensitive material layer. The other one of the gas sensitive material layers is completely covered with a coating layer made of an electrically insulating material to compensate for the temperature of the gas sensing element. The gas detection device is characterized in that the gas-sensitive material layer reacts with the gas and detects the gas as a change in resistance value.
先づ、前記ガス感応物質層の周囲が電気的絶縁性材料か
らなる被覆層で覆われているガス検出装置の発明につい
て詳述する。First, the invention of a gas detection device in which the periphery of the gas sensitive material layer is covered with a coating layer made of an electrically insulating material will be described in detail.
第３図、第４図、第５図において、ガス感応物質層１５
は絶縁体層１２、ヒータ等材料層１３（詳細には第３図
検出用リード１３ａ、 １３ｂの一部先端領域）の上部
に形成されている。In FIGS. 3, 4, and 5, the gas sensitive material layer 15
are formed on the insulator layer 12 and the heater material layer 13 (specifically, in the part of the tip region of the detection leads 13a and 13b in FIG. 3).
本発明では１５の周辺上を、さらに被覆絶縁層１４を用
いて覆っている（第４，５図参照）。これにより第２図
の様なハガレが起らず信頼性に優れている。In the present invention, the periphery of 15 is further covered with an insulating coating layer 14 (see FIGS. 4 and 5). As a result, peeling as shown in FIG. 2 does not occur and reliability is excellent.
特にヒータ等材料層１３と絶縁体層１２がガス感応物質
層１５に対し付着力が比較的小さいので、絶縁体層１２
と被覆絶縁層１４の端部によりガス感応物質層］５をは
さみ込む形になっており、ハガレを起しにくい。又、被
覆絶縁層１４が第１図の従来例のようにガス感応物質層
１５の下にあるのではなく、第４図に示すように被覆絶
縁層１４はガス感応物質層１５の上にあるため、被覆絶
縁層１４の段差が存在せず、この段差の存在に基因する
ガス感応物質層１５の段切れがおこるおそれがない。In particular, since the adhesion of the heater material layer 13 and the insulator layer 12 to the gas-sensitive material layer 15 is relatively small, the insulator layer 12
The gas-sensitive material layer] 5 is sandwiched between the end portions of the insulating coating layer 14 and the end portions of the covering insulating layer 14, so that peeling is less likely to occur. Further, the insulating cover layer 14 is not located below the gas-sensitive material layer 15 as in the conventional example shown in FIG. 1, but is located above the gas-sensitive material layer 15 as shown in FIG. Therefore, there is no step in the covering insulating layer 14, and there is no fear that the gas-sensitive material layer 15 will break due to the presence of this step.
絶縁体層１２と被覆絶縁体層１４は、どちらも５ｉｎ２
、ＡＱ２０３、Ｓｉ３Ｎ４、Ｔａ２０５等から成る同質
材料であるためである。従ってヒータ等材料層１３とし
てＡｕ、 Ｐｔ、 Ｐｄ、Ｉｒ、 Ｒｈ等の酸化されに
くく１３．１５．１４と強固な付着力を持たない材料を
単層で用いることも可能である。Both the insulator layer 12 and the covering insulator layer 14 are 5in2
, AQ203, Si3N4, Ta205, and the like. Therefore, it is also possible to use a single layer of a material such as Au, Pt, Pd, Ir, Rh, etc., which is not easily oxidized and does not have strong adhesion, as the heater material layer 13.
付着力強化層としてＭｏ、 Ｃｒ、 Ｔｉ、Ｎｉ等の介
在が不用になるので簡便になり、またＡｕ−Ｃｒ、Ｐｔ
Ｎｉ等の合金化が進みヒータ抵抗値変化、低融点化を起
こすなどの場合、安易に解決できるため都合が良い。It is simple because it does not require the presence of Mo, Cr, Ti, Ni, etc. as an adhesion-strengthening layer.
This is convenient because it can be easily resolved in cases where alloying of Ni, etc. progresses and causes a change in heater resistance value or a decrease in melting point.
第４図、第５図の製造方法について説明する。The manufacturing method shown in FIGS. 4 and 5 will be explained.
第４−１図、第５−１図では、まずＳｉ基板１１０に５
ｉｎ２絶縁体層１２０（０，２−２μｍ）、阿。付着力
強化層（０，０３−０，２μｍ）１３１を介してｐｔ上
ヒータード・ガス検出用リード・ポンディングパッド層
（０，１−２μｍ） １３２及び１３３を形成する。５
ｉ０２絶縁体層１２０、Ｍｏ付着力強化層１３１、ｐｔ
ヒーターリード、ガス検知用リードポンディングパッド
層１３２．１３３はいずれも蒸着、スパッタリング、Ｃ
ＶＤ、イオンブレーティングなどでつくることができる
。この上部にフォトレジストをパターニング後１３１，
１．３２，１３３をプラズマエツチングすると第４−８
図、第５−８図のものから、第４−９図、第５−９図の
ものが得られる。ｐｔ等は一般にエツチングに困難が伴
うのでさらに上部層として５ｉｎ２工ツチングレジスト
層（０，１〜２ μｍ）１４０を設ける。In FIGS. 4-1 and 5-1, first, the Si substrate 110 is
in2 insulator layer 120 (0.2-2 μm), a. Lead bonding pad layers (0.1-2 μm) 132 and 133 for heated gas detection are formed on the PT via an adhesion reinforcing layer (0.03-0.2 μm) 131. 5
i02 insulator layer 120, Mo adhesion strengthening layer 131, pt
Heater leads and gas detection lead bonding pad layers 132 and 133 are all formed by vapor deposition, sputtering, and C.
It can be created using VD, ion blating, etc. After patterning the photoresist on top of this 131,
1. Plasma etching of 32 and 133 results in No. 4-8.
5-8, those shown in FIGS. 4-9 and 5-9 are obtained. Since etching of PT, etc. is generally difficult, a 5in2 etching resist layer (0.1 to 2 .mu.m) 140 is further provided as an upper layer.
次に第４−２図、第５−２図ではＳｉＯ□エツチングレ
ジスト層１４０の上部にフォトレジストをパターニング
後緩衝フッ酸液でＳｉＯ□エツチングレジスト層１４０
をパターンエツチング、さらに同層１４０とＭｏ付着力
強化層１３１、ｐｔ上ヒータード・ガス検出用リード・
ポンディングパッド層１３２および１３３よりなる三つ
の層１３０のスパッタリング収率の差を利用してＡｒス
パッターエツチングを行うと第４−３図、第５−３図の
形状が得られる。 第４−４図、第５−４図では、ガス
検出用リードのｐｔとガス感応物質層のＳｎＯ□との接
続のためＭｏ層１３３を一部除去する。すなわち、フオ
トレジス１〜をパターニング後希硝酸で１３３をパター
ンエツチングしポンディングパッドと検出部上のＭｏを
除去する。Next, in FIGS. 4-2 and 5-2, after patterning a photoresist on the top of the SiO□ etching resist layer 140, the SiO□ etching resist layer 140 is etched using a buffered hydrofluoric acid solution.
pattern etching, further layer 140 and Mo adhesion strengthening layer 131, heated gas detection lead on PT.
When Ar sputter etching is performed using the difference in sputtering yield of the three layers 130 consisting of the bonding pad layers 132 and 133, the shapes shown in FIGS. 4-3 and 5-3 are obtained. In FIGS. 4-4 and 5-4, a portion of the Mo layer 133 is removed for connection between the pt of the gas detection lead and the SnO□ of the gas sensitive material layer. That is, after patterning the photoresist 1 to 133, pattern etching is performed using dilute nitric acid to remove Mo on the bonding pad and the detection section.
第４−５図、第５−５図では、ＳｎＯ□ガス感応物質層
を一様に成膜した後フォトレジストをパターニング、プ
ラズマエツチングによりパターン１５０を形成する。4-5 and 5-5, after a SnO□ gas sensitive material layer is uniformly formed, a pattern 150 is formed by patterning a photoresist and plasma etching.
第４−６図、第５−６図では、５ｉｎ２被覆絶縁層（０
，１〜２μｍ）１４１を形成しフォトレジストをパター
ニング後、緩衝フッ酸液にてガス感応物質層１５０の上
部、ポンディングパッド、Ｓｉエツチング窓を開口させ
る。In Figures 4-6 and 5-6, 5in2 coating insulation layer (0
, 1 to 2 μm) 141 and patterning the photoresist, the upper part of the gas sensitive material layer 150, the bonding pad, and the Si etching window are opened using a buffered hydrofluoric acid solution.
第４−７図、第５−７図では、Ｓｉエツチング窓からＳ
ｉ基板１１０をＮａＯＨ液を用いて深さ１０〜２００μ
ｍにエツチングし空洞°（溝）１００を形成する。In Figures 4-7 and 5-7, the S
The i-substrate 110 is coated with NaOH solution to a depth of 10 to 200 μm.
A cavity (groove) 100 is formed by etching.
第４−７図は第４図、第５−７図は第５図に相当する。4-7 corresponds to FIG. 4, and FIG. 5-7 corresponds to FIG. 5.
第１０図、第１１図は、片持ち梁形状の絶縁体層５６上
に、ヒータリード５３Ｃ、ガス検出用リード５３ａ、５
３ｂ及びガス感応物質層５５を配置し被覆絶縁層５４を
重ねた例である。第１０図ではヒータリードはガス検出
用リードの外周に配置されているが、相入換えて内周側
でも可能である。10 and 11 show heater leads 53C, gas detection leads 53a, 5 on a cantilever-shaped insulator layer 56.
3b and a gas-sensitive material layer 55 are arranged, and a covering insulating layer 54 is layered thereon. In FIG. 10, the heater lead is arranged on the outer periphery of the gas detection lead, but it is also possible to replace the heater lead on the inner periphery side.
第１２図、第１３図は、空洞（溝）を基板６１に貫通す
る形に空間６０を形成した例である。この場合基板６１
がエツチング可能で、他の構成材料及び自身をエツチン
グしない選択エツチング用材料６８をガス検出側と反対
の基板面に所定の形状にパターニングしておく必要があ
る。例えば基板６１にＳｊ、絶縁体層６６と被覆絶縁層
６４にＳｉＯ□、６８にＳｉＯ２を選ぶことができ、６
６と６４をパターニングする際に同時に６８をパターニ
ングすることができる。FIGS. 12 and 13 are examples in which a space 60 is formed so as to penetrate a substrate 61 through a cavity (groove). In this case, the substrate 61
It is necessary to pattern a selective etching material 68 in a predetermined shape on the substrate surface opposite to the gas detection side, which can be etched and does not etch other constituent materials or itself. For example, it is possible to select Sj for the substrate 61, SiO□ for the insulator layer 66 and covering insulating layer 64, and SiO2 for 68.
When patterning 6 and 64, it is possible to pattern 68 at the same time.
第１４図、第１５図は、第１２図、１３図で反対面か＝
１１
ら空間を形成した例に対し、従来通り同一面上から空洞
７０を設けている。各リードが交差した架橋構造を形成
する。Are Figures 14 and 15 the opposite side of Figures 12 and 13?
11, a cavity 70 is provided from the same surface as before. Each lead forms a cross-linked structure.
第１６図は、第１５図の空洞部７０に基板反対面からエ
ツチングにより空間８０を形成した例である。FIG. 16 shows an example in which a space 80 is formed in the cavity 70 of FIG. 15 by etching from the opposite side of the substrate.
第６図、第７図は特許請求の範囲第２項の発明の１つの
具体例を示すものである。第７図の断面図にみられるよ
うにガス検出素子３３と温度補償素子３８が同一の基板
３１上に設けられており、ガス検出素子３３は第４．５
図で説明したとおりであり、温度補償素子３８の製造は
、ガス感応物質層１５の上部全体に被覆絶縁層１４を形
成すればよく、第３〜５図のようなエツチングを行わな
い。このようにすればこの素子はガスに感度を示さず、
周囲の温度にのみ影響を受けるため温度補償素子として
機能する。第６図、第７図において、空洞（溝）３０は
１連になっているが各架橋に各１コの不連結な構造でも
よい。ただし図の例の様に］一連であると、ガス検出側
架橋３６と温度補償側架橋３７の周囲雰囲気に差が小さ
いため、個別の空洞の場合より補償精度は向上する利点
はある。FIG. 6 and FIG. 7 show one specific example of the invention set forth in claim 2. As seen in the cross-sectional view of FIG. 7, the gas detection element 33 and the temperature compensation element 38 are provided on the same substrate 31, and the gas detection element 33
As explained in the drawings, the temperature compensating element 38 can be manufactured by simply forming the covering insulating layer 14 over the entire upper part of the gas sensitive material layer 15, without performing etching as shown in FIGS. 3 to 5. In this way, this element will not be sensitive to gas,
Since it is affected only by the ambient temperature, it functions as a temperature compensation element. In FIGS. 6 and 7, the cavities (grooves) 30 are shown as one series, but they may have a discontinuous structure in which each bridge has one cavity. However, if they are connected in series as in the example shown in the figure, there is a small difference in the ambient atmosphere between the gas detection side bridge 36 and the temperature compensation side bridge 37, so there is an advantage that the compensation accuracy is improved compared to the case of separate cavities.
第８図では、第６図での２本のヒータリードを１本にま
とめて、一方の側にガス検出用リード、他方の側に温度
補償用リードを沿わせて、１本の架橋上に配置した例を
示す。これによりヒータの消費電力を低減できると共に
２対のリードの温度が容易に同等の温度にすることが可
能でより補償精度が向上する。In Figure 8, the two heater leads in Figure 6 are combined into one, with the gas detection lead on one side and the temperature compensation lead on the other side, and placed on one bridge. An example of the arrangement is shown below. As a result, the power consumption of the heater can be reduced, and the temperatures of the two pairs of leads can be easily brought to the same temperature, thereby further improving the compensation accuracy.
第１７図、第１８図は、第６図、第７図における温度補
償機能を第１２図、１３図の場合に適用した例である。17 and 18 are examples in which the temperature compensation function in FIGS. 6 and 7 is applied to the cases in FIGS. 12 and 13.
従来技術の項で述べたように、第１９−１図の様に構成
された１対のガス検出リード２１３ａ、２１３ｂ間に第
１９−２図でガス感応物質層２１５を上部に形成すると
、２１５付近は３００〜４００℃程度の高温で動作され
るため第１９−３図のごとく結晶粒の成長、膜の焼きし
まりを生じ、この結果ガス検出用リードと電気的に接触
不良をもたらす。As described in the prior art section, when the gas sensitive material layer 215 is formed on the upper part of FIG. 19-2 between the pair of gas detection leads 213a and 213b configured as shown in FIG. Since the vicinity is operated at a high temperature of about 300 to 400° C., crystal grain growth and film compaction occur as shown in FIG. 19-3, resulting in poor electrical contact with the gas detection lead.
これらの層（膜）は蒸着、スパッタ、ＣＶＤ、イオンブ
レーティング法等により、材料の融点よりはるかに低い
温度条件下で製作されるが基体上ガス検出リード
２１３ａ、２１３ｂ −Ｍｏ、Ｐｔ等は比較的そのバ
ルクに近い性質が得られち密であり焼きしまりによる体
積変化が小さい。These layers (films) are manufactured by vapor deposition, sputtering, CVD, ion blating, etc. under temperature conditions far lower than the melting point of the material, but they do not produce gas detection leads on the substrate.
213a, 213b -Mo, Pt, etc. have properties that are relatively close to bulk, are dense, and have little volume change due to compaction.
一方、ガス感応物質層であるＳｎＯ２、Ｆｅ２Ｏ３ある
いはＺｎＯ等は高融点材料であり単品化しにくい性質を
もつ。従って結晶化、結晶粒径の増大化が進行し第１９
−３図の様になってしまう。On the other hand, the gas-sensitive material layer, such as SnO2, Fe2O3, or ZnO, is a high melting point material and has a property that it is difficult to make it into a single product. Therefore, crystallization and increase in crystal grain size progress and the 19th
-It will look like Figure 3.
そこで、本発明においては、第２０−１図から第２０−
３図に示すような改善を行った。まず第２０−１図でガ
ス感応物質層をパターニングし次に第２０−２図で焼き
しめを行う。焼きしめの条件は４００〜１０００℃の範
囲で空気又は０２中とし、例えばガス感応物質層厚みが
０．０５〜２μｍ程度において６００°Ｃ空気中３０分
〜３時間とすると良い。その結果節２０−２図の形態に
なる。Therefore, in the present invention, FIGS. 20-1 to 20-
Improvements were made as shown in Figure 3. First, the gas-sensitive material layer is patterned as shown in FIG. 20-1 and then baked in as shown in FIG. 20-2. The baking conditions are in the range of 400 to 1000° C. in air or in 02° C., for example, when the thickness of the gas sensitive material layer is about 0.05 to 2 μm, it is preferable to bake at 600° C. in air for 30 minutes to 3 hours. As a result, the form shown in Section 20-2 is obtained.
ここで第２０−３図の様に一部重なる形でガス検出用リ
ードを取付ければ、ガス感応物質層の結晶粒面を広く覆
うことができて接触状態が良く、さらにヒータによる加
熱が行われてもすでに焼きしまっているため経時安定性
に優れている。具体的な実施例としてまず第２１図、第
２２図について説明する。If the gas detection leads are attached in such a way that they partially overlap as shown in Figure 20-3, the crystal grain surfaces of the gas-sensitive material layer can be widely covered and the contact condition is good, and furthermore, heating by the heater can be performed. It has excellent stability over time because it has already been baked. As a specific example, FIGS. 21 and 22 will first be described.
第２１図は第４図、第２２図は第５図の場合（引例特開
昭６１．−１９１．９５３号であるとＰ、３１２第４図
、第３ｇ図）に相当する。ただし第２１．２２図ではガ
ス感応物質層３１５の周辺上部にガス検出用り一ド３１
３ａ、３１３ｂの先端がある。このようにガス感応物質
層３１５はガス検出用リード３１３と被覆絶縁層３１４
で押えられており、ハガレのおこる心配はない。又、第
２１図のＯ印部は第２１−８図に示すように被覆絶縁層
４４０によりガス検出用り−ド４３２の先端部も完全に
被覆することが好ましい。これらの場合にはガス感応物
質層３１５には段差部分は′完全に無くなるため、段切
れが発生する可能性は無く信頼性はさらに向上する。21 corresponds to the case of FIG. 4, and FIG. 22 corresponds to the case of FIG. 5 (P, 312, FIG. 4, and FIG. 3g in the cited Japanese Patent Application Laid-Open No. 1986-191.953). However, in FIGS. 21 and 22, a gas detection pad 31 is placed above the periphery of the gas sensitive material layer 315.
There are tips 3a and 313b. In this way, the gas sensitive material layer 315 is connected to the gas detection lead 313 and the covering insulating layer 314.
It is held in place so there is no need to worry about peeling. Further, it is preferable that the end portion of the gas detection rod 432 is also completely covered by the covering insulating layer 440 at the O-marked portion in FIG. 21-8, as shown in FIG. 21-8. In these cases, the gas-sensitive material layer 315 has no step portion completely, so there is no possibility of step breakage occurring, and reliability is further improved.
また温度補償を考慮すると第９図の様に第２３図が展開
できる。同様に張り出し部は片持ち梁等の形状も可能で
ある。Furthermore, when temperature compensation is taken into consideration, the diagram in FIG. 23 can be developed as shown in FIG. 9. Similarly, the projecting portion may have a cantilever shape or the like.
つぎに、ガス感応物質層の上部周囲に検出用リードを取
りつけるタイプの積層体の製法について、第２１．２２
図を用いて説明する。Next, Section 21.22 describes the method for manufacturing a laminate in which a detection lead is attached around the upper part of the gas-sensitive material layer.
This will be explained using figures.
まず第２１−１図、第２２−１図では、Ｓｉ基板４１０
にＳｉＯ□絶縁体層４２０（０，２〜２μｍ）を形成す
る。First, in FIGS. 21-1 and 22-1, the Si substrate 410
A SiO□ insulator layer 420 (0.2 to 2 μm) is formed on.
第２１−２図、第２２−２図では、ＳｎＯ２ガス感応物
質層を形成後フォトエツチングして所定形状のガス感応
物質層４５０を設け、前述のごとく焼きしめる。In FIGS. 21-2 and 22-2, a SnO2 gas sensitive material layer is formed and photoetched to provide a gas sensitive material layer 450 having a predetermined shape, and then baked as described above.
第２１−３図、第２２−３図では、さらにヒータリード
等の抵抗材料として阿。付着力強化層４３１（０，０３
−０，２ｔｔ ＋ｎ）を介シテ抵抗材料ｐｔ層４３２（
０，１〜２μｍ）を重ね、その上に阿。付着力強化層４
３３を重ねる。In FIGS. 21-3 and 22-3, aluminum is further used as a resistance material for heater leads and the like. Adhesive strength layer 431 (0,03
-0,2tt +n) through the resistive material PT layer 432 (
0.1-2 μm), and on top of that. Adhesive strength layer 4
Repeat 33.
第２１−４図、第２２−４図では、フォトレジストを形
成後プラズマエツチング、スパッタエツチング等でＭｏ
付着力強化層４３１，４３３、抵抗材料層４３２をパタ
ーニングする。In FIGS. 21-4 and 22-4, after forming the photoresist, Mo is etched by plasma etching, sputter etching, etc.
The adhesion strengthening layers 431 and 433 and the resistance material layer 432 are patterned.
第２１−４図で４３２ｂ、４３２ａはガス検出用リード
ｐｔ層を示し、すでに焼きしめた５ｎ０２よりなるガス
感応物質層４５０の両端上部を覆う形となる。In FIG. 21-4, reference numerals 432b and 432a indicate gas detection lead PT layers, which cover the tops of both ends of the gas sensitive material layer 450 made of 5N02 which has already been baked.
第２１−５図、第２２−５図では、ＳｉＯ□被覆絶縁層
４４０（０，１〜２μｍ）を形成する。In FIGS. 21-5 and 22-5, a SiO□ covering insulating layer 440 (0.1 to 2 μm) is formed.
第２１−６図、第２２−６図では、被覆絶縁層４４０の
ガス感応物質層４５０の上部相当個所、Ｓｉエツチング
窓、ポンディングパッド４３０ａ’、４３０ｂ’等を緩
衝フッ酸液にてエツチングして開口させる。In FIGS. 21-6 and 22-6, portions of the covering insulating layer 440 corresponding to the upper part of the gas-sensitive material layer 450, the Si etching window, the bonding pads 430a', 430b', etc. are etched with a buffered hydrofluoric acid solution. to open it.
第２１−７図、第２２−７図では、ポンディングパッド
部のＭｏ付着力強化層４３３を希硝酸にてエツチング除
去したところである。In FIGS. 21-7 and 22-7, the Mo adhesion reinforcing layer 433 on the bonding pad portion has been removed by etching with dilute nitric acid.
第２１−８図、第２２−８図では、Ｓｉエツチング窓か
らＳｉ基板４１０をＮａＯＨ液を用いて深さ１０〜２０
０μｍにエツチングし空洞（溝）４００を形成する。21-8 and 22-8, the Si substrate 410 is etched from the Si etching window to a depth of 10 to 20 mm using NaOH solution.
A cavity (groove) 400 is formed by etching to 0 μm.
第２１図は第２１−８図、第２２図は第２２−８図に相
当する。21 corresponds to FIG. 21-8, and FIG. 22 corresponds to FIG. 22-8.
又、別法により、第２１−２図、第２２−２図よリ、第
２１−９図、第２２−９図を経て第２１’−１２図、第
２２−１２図にいたるルートでも製造できる。In addition, by another method, it can be manufactured by the route from Figure 21-2, Figure 22-2, Figure 21-9, Figure 22-9 to Figure 21'-12, Figure 22-12. can.
第２１−９図、第２２−９図では、第２１−３図、第２
２−３図の上部に５ｉｎ２被覆絶縁層４４０を加え、第
２１−１．０図、第２２−１０図ではフォトレジスト形
成後４４０を緩衝フッ酸液にてエツチングし、さらにプ
ラズマエツチング、スパッタエツチング等でパターニン
グする。In Figures 21-9 and 22-9, Figures 21-3 and 2
A 5in2 covering insulating layer 440 is added to the upper part of Fig. 2-3, and in Figs. 21-1.0 and 22-10, after the photoresist is formed, 440 is etched with a buffered hydrofluoric acid solution, and further plasma etching and sputter etching are performed. Pattern with etc.
第２１−１１図、第２２−１１図及び第２］、−］、２
図、第２２−１２図は、第２１−７図、第２２−７図及
び第２１８図、第２２−８図に相当する。Figures 21-11, 22-11 and 2], -], 2
22-12 corresponds to FIGS. 21-7, 22-7, 218, and 22-8.
第２１−１３図、第２２−１３図から第２１−２０図、
第２２−２０図までを説明する。Figures 21-13, 22-13 to 21-20,
22 to 20 will be explained.
前例節２１−１図、第２２−１図から第２１．−１２、
第２２−１２図までのＭｏ付着力強化層４３１を介して
Ｐｔよりなる抵抗材料層４３２がＳｎＯ□よりなるガス
感応層４５０と接触する構造に対し、本例では阿０の境
界層を除去してｐｔよりなる抵抗材料層５３２がＳｎＯ
□よりなるガス感応物質層５５０と直接接触できるよう
になる。ＭＯが境界に介在すると阿。の酸化進行により
ｐｔとＳｎＯ□間の抵抗値が増大し不安定である。ｐｔ
は酸化されにくいので安定である。Precedent Section Figures 21-1 and 22-1 to 21. -12,
In contrast to the structure in which the resistive material layer 432 made of Pt contacts the gas sensitive layer 450 made of SnO□ through the Mo adhesion strengthening layer 431 shown in FIG. 22-12, in this example, the boundary layer of A0 is removed. The resistive material layer 532 made of PT is SnO.
This allows direct contact with the gas sensitive material layer 550 made of □. If MO intervenes at the boundary. As the oxidation progresses, the resistance value between pt and SnO□ increases and becomes unstable. pt.
is stable because it is not easily oxidized.
第２１−１４図、第２２−１４図では、Ｍｏ付着力強化
層を全面に形成後、ＳｎＯ□ガス感応物質層５５０のパ
ターン部分に相当する形状を希硝酸でエツチング除去し
たもの力酊０付着力強化層５３１である。21-14 and 22-14, after forming the Mo adhesion strength layer on the entire surface, the shape corresponding to the pattern part of the SnO□ gas sensitive material layer 550 is removed by etching with dilute nitric acid. This is the adhesion strength layer 531.
第２１−１５図、第２２−１５図では、ＳｎＯ□ガス感
応物質層を全面に形成後、ガス検出部のパターン５５０
の上部領域のみをフォトレジストで被覆し、プラズマエ
ツチング後、フォトレジストを除去すると５５０の部分
に５ｎ０７ガス感応物質のパターンが形成される。21-15 and 22-15, after forming the SnO□ gas-sensitive material layer on the entire surface, a pattern 550 of the gas detection part is
Only the upper region of is coated with photoresist, and after plasma etching, the photoresist is removed to form a pattern of 5n07 gas sensitive material at 550.
第２１．−１６図、第２２−１６図では、上部層として
ｐｔよりなる抵抗材料層５３２、ＭＯよりなる付着力強
化層５３３を形成後エツチングして５５０の両端−部上
部を被覆する形となる。21st. 16 and 22-16, a resistance material layer 532 made of PT and an adhesion reinforcing layer 533 made of MO are formed as upper layers and then etched to cover the upper portions of both ends of 550.
ここでＳｎＯ□５５０とＰｔ５３２が直接接触すること
になる。以後は前例と同様である。Here, SnO□550 and Pt532 come into direct contact. The rest is the same as the previous example.
また第２１−２０図、第２２−２０図の様に、ＳｎＯ□
をパターニング５５０後、ＭＯを形成５５０上部領域を
エッチング除去して第２１−１５図、第２２−１５図と
してもよい。Also, as shown in Figures 21-20 and 22-20, SnO□
After patterning 550, the upper region of MO is formed 550 and removed by etching, as shown in FIGS. 21-15 and 22-15.
第２１−２１図、第２２−２１図から第２１．−３１、
第２２３１図までは前例箱２１−１図、第２２−１図か
ら第２１−１２、第２２−１．２図までの抵抗材料層４
３１．４３２．４３３をｐｔ層のみ６３０に限定した場
合の実施例を述べである。ｐｔは５１０２と付着力が小
さいため前例ではＭｏ付着力強化層を加えているが、本
例の様にＳｉＯ２にはさまれていれば付着力が小さくて
も保持できる。21-21, 22-21 to 21. -31,
Up to Figure 2231 are examples of the resistance material layer 4 in box 21-1, figure 22-1 to figure 21-12, and figure 22-1.2.
An example in which 31, 432, and 433 are limited to 630 only for the PT layer will be described. Since pt has a small adhesion force of 5102, a Mo adhesion reinforcing layer was added in the previous example, but if it is sandwiched between SiO2 as in this example, it can be maintained even if the adhesion force is small.
第２４図では、アルミナ、ガラス等のセラミック耐熱性
基板７１０を示し、第２５図では基板上にガス感応物質
層７５０をバターニング後焼きしめを行う。FIG. 24 shows a ceramic heat-resistant substrate 710 made of alumina, glass, etc., and FIG. 25 shows a gas-sensitive material layer 750 on the substrate after buttering and baking.
ガス感応物質層７５０は５ｎ０７、Ｆｅ２Ｏ３、ＺｎＯ
１ＴｉＯ□等の金属酸化物半導体材料から成り、（１）
蒸着、ＣＶＤ、スパッタ、イオンブレーティング等
（２）金属塩化物、金属水酸化物、金属酸化物にシリカ
、アルミナなどのバインダーを添加し溶剤を加えて印刷
、
などの製法による。The gas sensitive material layer 750 is 5n07, Fe2O3, ZnO
It is made of a metal oxide semiconductor material such as 1TiO□, (1)
Vapor deposition, CVD, sputtering, ion blating, etc. (2) Printing by adding a binder such as silica or alumina to metal chloride, metal hydroxide, or metal oxide and adding a solvent.
第２６図では、検出用リード７３０、ヒータ７３１、配
線７３２を取りつけて完成する。In FIG. 26, the detection lead 730, heater 731, and wiring 732 are attached to complete the process.
第２７図は、第２６図の上部平面図を示す。FIG. 27 shows a top plan view of FIG. 26.
第２８図は、ヒータ部が基板の反対面にある場合を示す
。FIG. 28 shows the case where the heater section is on the opposite side of the substrate.
［効 果］
本発明の構成を採用することにより、ガス感応物質層の
ハガレや段切れを防止することができる。[Effects] By adopting the configuration of the present invention, peeling and breakage of the gas-sensitive material layer can be prevented.
第１図、第２図は先行技術の説明図である。
第３図〜第２８図はいずれも本発明のガス検出装置を説
明するための図面である。なかでも第５−１図〜第５−
９図、第６〜９図、第１７〜１８図、第２２〜２３図、
第２６〜２８図は特許請求の範囲第２項の発明を説明す
るための図面である。
なお、第４図は第３図のＱ −Ｑ’断面図、第５図は第
３図のＰ −Ｐ’断面図、第７図は第６図のＲ−Ｒ’断
面図、第９図は第８図のｓ−ｓ’断面図、第１１図は第
１０図のＴ −Ｔ’断面図、第１３図は第１２図のＵ
−Ｕ’断面図、第１５図は第１４図５７）Ｖ−Ｖ’断面
図、第１８図は第１７図のｗ −ｗ’断面図である。
１０・・・空洞又は溝
１２”’５ｉｎ２．ＡＱ２０３．Ｓｉ３Ｎ４．Ｔａ２Ｏ
，等の絶縁体層体
１３ａ、１３ｂ・・・検出用リード
１３ａ’ 、 １３ｂ’ 、 １３ｃ’ 、 １３ｃ“
・・・ポンディングパッド１３ｃ・・・ヒータリード
１４・・・被覆絶縁層・・・１２と同じ材料３０・・・
空洞（溝）
３３・・・ガス検出素子
３５・・・ガス感応物質層
３７・・・温度補償側架橋
３１・・基 板
３４・・・被覆絶縁層
３６・・・ガス検出側架橋
３８・・・温度補償素子
４４・・・被覆絶縁層 ４５・・・ガス感応物質層
６３ａ、６３ｂ・・ガス検出用リード
６３ｃ、６３ｄ−ヒータリード
３１０・・・空洞（溝）３１１・・・基 板３１２・・
・電気的絶縁材料
３１３ａ’ 、３１３ｂ’・・・ポンディングパッド（
検出側）３１４・・・被覆絶縁層 ３１３ｃ・・ヒー
タリード３４６・・ガス検出側 ３４７・・・温度補
償側３４８・・・ヒータ部 ４１０・・・基 板４
２０・・・絶縁体層
４３１・・・Ｍｏ付着力強化Ｍ４３２・・抵抗材料層４
３２ａ、４３２ｂ−ガス検出用リードｐｔ層４３３・・
・河。付着力強化層
４４０・・・被覆絶縁層 ４５０・・・ガス感応物質
層６１０・・・Ｓｉ基板 ６２０・・・ＳｉＯ２
絶縁層６３０− Ｐｔ抵抗材料層（Ａｕ、Ｐｄ、Ｎｉ、
Ｃｒ、Ｔｉなどの単層を意味する）
６５０・・・５ｎ０２ガス感応物質層
６１０・空洞（又は溝）
７１０・・セラミック耐熱性基板
７３０・・検出用リード
７３２・・・配 線
８３０・・・検出用リード
８５０・・・ガス感応物質層
７３１・・ヒータ
７５０・・・ガス感応物質層
８３１・・・ヒータFIG. 1 and FIG. 2 are explanatory diagrams of the prior art. 3 to 28 are drawings for explaining the gas detection device of the present invention. Among them, Figures 5-1 to 5-
Figure 9, Figures 6-9, Figures 17-18, Figures 22-23,
26 to 28 are drawings for explaining the invention of claim 2. Note that FIG. 4 is a sectional view taken along line Q-Q' in FIG. 3, FIG. 5 is a sectional view taken along line P-P' in FIG. 3, FIG. 7 is a sectional view taken along line RR' in FIG. 6, and FIG. is the ss' sectional view in FIG. 8, FIG. 11 is the T-T' sectional view in FIG. 10, and FIG. 13 is the U in FIG.
-U' sectional view, FIG. 15 is a sectional view taken along line V-V' in FIG. 14, and FIG. 18 is a w-w' sectional view in FIG. 10...Cavity or groove 12'''5in2.AQ203.Si3N4.Ta2O
, etc. Insulator layer bodies 13a, 13b...detection leads 13a', 13b', 13c', 13c''
...Ponding pad 13c...Heater lead 14...Coating insulating layer...Same material as 12 30...
Cavity (groove) 33...Gas detection element 35...Gas sensitive material layer 37...Temperature compensation side bridge 31...Substrate 34...Coating insulating layer 36...Gas detection side bridge 38... Temperature compensating element 44... Covering insulating layer 45... Gas sensitive material layer 63a, 63b... Gas detection leads 63c, 63d - Heater lead 310... Cavity (groove) 311... Substrate 312.・
- Electrical insulating materials 313a', 313b'... bonding pads (
Detection side) 314... Covering insulating layer 313c... Heater lead 346... Gas detection side 347... Temperature compensation side 348... Heater section 410... Substrate 4
20... Insulator layer 431... Mo adhesion strength reinforcement M432... Resistance material layer 4
32a, 432b - gas detection lead PT layer 433...
·river. Adhesive strength layer 440... Covering insulating layer 450... Gas sensitive material layer 610... Si substrate 620... SiO2
Insulating layer 630 - Pt resistance material layer (Au, Pd, Ni,
650...5n02 gas sensitive material layer 610/cavity (or groove) 710...ceramic heat-resistant substrate 730...detection lead 732...wiring 830... Detection lead 850...Gas sensitive material layer 731...Heater 750...Gas sensitive material layer 831...Heater
Claims (1)
て互いに所定距離隔離して設けた少なくとも一対の検出
用リード、略前記検出用リードと並置して設けられた少
なくとも１個のヒータリード、前記検出領域において前
記少なくとも一対の検知用リードの夫々に接触して設け
られたガス感応物質層、を有しており、前記ガス感応物
質層の周囲は電気的絶縁性材料からなる被覆層に覆われ
ているか、もしくはガス感応物質層の上部周囲に検出用
リードが取付けられた構造を有しており、前記ガス感応
物質層がガスと接触反応することによりその抵抗値変化
としてガス検出を行なうことを特徴とするガス検出装置
。 ２、基板、前記基板上に設けられており検出領域におい
て互いに所定距離隔離して設けた少なくとも一対の検出
用リード、略前記検出用リードと並置して設けられた少
なくとも１個のヒータリード、前記検出領域において前
記少なくとも一対の検知用リードの夫々に接触して設け
られた２個のガス感応物質層、を有しており、かつ前記
ガス感応物質層の１つは、その周囲のみが電気的絶縁性
材料からなる被覆層に覆われているか、もしくはガス感
応物質層の上部周囲に検出用リードが取付けられた構造
を有するガス検出素子であり、前記ガス感応物質層のも
う１個の方は、その全面が電気的絶縁性材料からなる被
覆層で完全に被覆されており前記ガス検出素子の温度補
償素子であり、前記ガス感応物質層がガスと接触反応す
ることによりその抵抗値変化としてガス検出を行なうこ
とを特徴とするガス検出装置。 ３、ガス検出のためのガス感応物質層の上端部を被覆用
絶縁層の端部又は被覆用絶縁層と検出用リードとの端部
で押えた構造をもつ請求項１又は２のガス検出装置。[Scope of Claims] 1. A substrate, at least a pair of detection leads provided on the substrate and separated from each other by a predetermined distance in a detection region, and at least one detection lead provided approximately in parallel with the detection lead; a gas-sensitive material layer provided in contact with each of the at least one pair of detection leads in the detection region, and the periphery of the gas-sensitive material layer is made of an electrically insulating material. It has a structure in which a detection lead is attached around the upper part of the gas-sensitive material layer, and when the gas-sensitive material layer contacts and reacts with the gas, the resistance value changes. A gas detection device characterized by performing gas detection. 2. a substrate, at least a pair of detection leads provided on the substrate and separated from each other by a predetermined distance in the detection region; at least one heater lead provided approximately in parallel with the detection lead; two gas-sensitive material layers provided in contact with each of the at least one pair of detection leads in the detection region, and one of the gas-sensitive material layers is electrically connected only around the surrounding area. The gas detection element is covered with a coating layer made of an insulating material or has a structure in which a detection lead is attached around the upper part of the gas sensitive material layer, and the other gas sensitive material layer is , whose entire surface is completely covered with a coating layer made of an electrically insulating material, is a temperature compensating element of the gas detection element, and when the gas sensitive material layer contacts and reacts with the gas, the gas is detected as a change in its resistance value. A gas detection device characterized by performing detection. 3. The gas detection device according to claim 1 or 2, having a structure in which the upper end of the gas sensitive material layer for gas detection is held down by the end of the covering insulating layer or the end of the covering insulating layer and the detection lead. .
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30685088A JPH02138858A (en) | 1988-03-01 | 1988-12-06 | Detecting device of gas |
| US07/288,279 US4967589A (en) | 1987-12-23 | 1988-12-22 | Gas detecting device |
| US07/559,148 US5003812A (en) | 1987-12-23 | 1990-07-30 | Gas detecting device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63-48408 | 1988-03-01 | ||
| JP4840888 | 1988-03-01 | ||
| JP30685088A JPH02138858A (en) | 1988-03-01 | 1988-12-06 | Detecting device of gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02138858A true JPH02138858A (en) | 1990-05-28 |
Family
ID=26388671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30685088A Pending JPH02138858A (en) | 1987-12-23 | 1988-12-06 | Detecting device of gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02138858A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07198646A (en) * | 1993-12-04 | 1995-08-01 | Lg Electron Inc | Low power-consumption-type thin film gas sensor and preparation thereof |
| US5456994A (en) * | 1992-06-08 | 1995-10-10 | Honda Giken Kogyo Kabushiki Kaisha | Battery module and temperature-controlling apparatus for battery |
| KR100627335B1 (en) * | 2004-06-25 | 2006-09-25 | 삼성에스디아이 주식회사 | Secondary battery module and wall of secondary battery module |
| JP2013096708A (en) * | 2011-10-28 | 2013-05-20 | Hitachi Automotive Systems Ltd | Humidity detecting device |
| JP2015230315A (en) * | 2014-06-06 | 2015-12-21 | センシリオン アクチエンゲゼルシャフト | Gas sensor package |
| US11955651B2 (en) | 2019-01-09 | 2024-04-09 | Byd Company Limited | Power battery pack and electric vehicle |
-
1988
- 1988-12-06 JP JP30685088A patent/JPH02138858A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5456994A (en) * | 1992-06-08 | 1995-10-10 | Honda Giken Kogyo Kabushiki Kaisha | Battery module and temperature-controlling apparatus for battery |
| JPH07198646A (en) * | 1993-12-04 | 1995-08-01 | Lg Electron Inc | Low power-consumption-type thin film gas sensor and preparation thereof |
| KR100627335B1 (en) * | 2004-06-25 | 2006-09-25 | 삼성에스디아이 주식회사 | Secondary battery module and wall of secondary battery module |
| CN100367538C (en) * | 2004-06-25 | 2008-02-06 | 三星Sdi株式会社 | Secondary battery module |
| US7682732B2 (en) | 2004-06-25 | 2010-03-23 | Samsung Sdi Co., Ltd. | Secondary battery module having protrusions on a barrier rib |
| JP2013096708A (en) * | 2011-10-28 | 2013-05-20 | Hitachi Automotive Systems Ltd | Humidity detecting device |
| JP2015230315A (en) * | 2014-06-06 | 2015-12-21 | センシリオン アクチエンゲゼルシャフト | Gas sensor package |
| US11955651B2 (en) | 2019-01-09 | 2024-04-09 | Byd Company Limited | Power battery pack and electric vehicle |
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