JPH02137054U - - Google Patents
Info
- Publication number
- JPH02137054U JPH02137054U JP1989043099U JP4309989U JPH02137054U JP H02137054 U JPH02137054 U JP H02137054U JP 1989043099 U JP1989043099 U JP 1989043099U JP 4309989 U JP4309989 U JP 4309989U JP H02137054 U JPH02137054 U JP H02137054U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- insulating film
- electrode
- gate electrode
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Description
第１図は本考案に係る薄膜トランジスタの一実
施例を示す断面図、第２図はそのＶＧ−ＩＤ特性
を示す図、第３図は従来の薄膜トランジスタを示
す断面図、第４図はそのＶＧ−ＩＤ特性を示す図
である。
１１…絶縁基板、１２…ゲート電極、１３…ゲ
ート絶縁膜、１４…第１の半導体層、１５…オー
ミツク構成層、１６…ソース電極、１７…ドレイ
ン電極、１８…第２の半導体層。
FIG. 1 is a sectional view showing an embodiment of a thin film transistor according to the present invention, FIG. 2 is a diagram showing its VG-ID characteristics, FIG. 3 is a sectional view showing a conventional thin film transistor, and FIG. 4 is a diagram showing its VG-ID characteristics. FIG. 3 is a diagram showing ID characteristics. DESCRIPTION OF SYMBOLS 11... Insulating substrate, 12... Gate electrode, 13... Gate insulating film, 14... First semiconductor layer, 15... Ohmic constituent layer, 16... Source electrode, 17... Drain electrode, 18... Second semiconductor layer.
Claims (1)
ゲート絶縁膜と、このゲート絶縁膜を挟んで前記
ゲート電極と対向した半導体層と、この半導体層
と電気的に接続したソース電極およびドレイン電
極とを有する薄膜トランジスタにおいて、前記ゲ
ート電極とゲート絶縁膜との間に第２の半導体層
を設けたことを特徴とする薄膜トランジスタ。 A gate electrode, a gate insulating film that insulates and covers the gate electrode, a semiconductor layer that faces the gate electrode with the gate insulating film in between, and a source electrode and a drain electrode that are electrically connected to the semiconductor layer. A thin film transistor, characterized in that a second semiconductor layer is provided between the gate electrode and the gate insulating film.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989043099U JPH02137054U (en) | 1989-04-14 | 1989-04-14 | |
| EP89120014A EP0366146B1 (en) | 1988-10-28 | 1989-10-27 | Thin film transistor having memory function and method for using thin film transistor as memory element |
| CA002001682A CA2001682C (en) | 1988-10-28 | 1989-10-27 | Thin film transistor having memory function and method for using thin film transistor as memory element |
| DE89120014T DE68912071T2 (en) | 1988-10-28 | 1989-10-27 | Thin film transistor with a memory function and method for using a thin film transistor as a memory element. |
| KR1019890015604A KR930003556B1 (en) | 1988-10-28 | 1989-10-28 | Memory transistor system |
| US07/668,741 US5196912A (en) | 1988-10-28 | 1991-03-13 | Thin film transistor having memory function and method for using thin film transistor as memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989043099U JPH02137054U (en) | 1989-04-14 | 1989-04-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02137054U true JPH02137054U (en) | 1990-11-15 |
Family
ID=31555226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989043099U Pending JPH02137054U (en) | 1988-10-28 | 1989-04-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02137054U (en) |
-
1989
- 1989-04-14 JP JP1989043099U patent/JPH02137054U/ja active Pending