JPH02111886A - Etching solution for partially al clad sheet for lead frame - Google Patents
Etching solution for partially al clad sheet for lead frameInfo
- Publication number
- JPH02111886A JPH02111886A JP26259788A JP26259788A JPH02111886A JP H02111886 A JPH02111886 A JP H02111886A JP 26259788 A JP26259788 A JP 26259788A JP 26259788 A JP26259788 A JP 26259788A JP H02111886 A JPH02111886 A JP H02111886A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- lead frame
- etching solution
- soln
- partially
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 31
- 238000005253 cladding Methods 0.000 claims abstract description 9
- 239000000243 solution Substances 0.000 claims description 25
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 abstract description 16
- 239000000956 alloy Substances 0.000 abstract description 16
- 229910003271 Ni-Fe Inorganic materials 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 10
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract description 9
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 7
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(III) nitrate Inorganic materials [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 abstract description 7
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 7
- 235000010344 sodium nitrate Nutrition 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 229910000640 Fe alloy Inorganic materials 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229920000298 Cellophane Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- XMIIGOLPHOKFCH-UHFFFAOYSA-N 3-phenylpropionic acid Chemical compound OC(=O)CCC1=CC=CC=C1 XMIIGOLPHOKFCH-UHFFFAOYSA-N 0.000 description 2
- 229910016874 Fe(NO3) Inorganic materials 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
利用産業分野
この発明は、Ａｌ部分クラッド板をリードフレームにフ
第１・エツチング加工するに際し、基板のＮｉ４０〜５
０ｗｔ％含有のＮｉ−Ｆｅ合金板のみを選択的に溶解除
去し、被着材の部分クラッドは未溶解のまま残存させる
エツチング液に係り、硝酸第二鉄と硝酸を主成分とする
エツチング液に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Application This invention applies to the first etching process of an Al partial clad plate to a lead frame.
It relates to an etching solution that selectively dissolves and removes only the Ni-Fe alloy plate containing 0 wt%, leaving the partial cladding of the adherend undissolved, and relates to an etching solution whose main components are ferric nitrate and nitric acid. .
背景技術
今日、リードフレーム材は、大型電算機、ＶＴＲ，ＯＡ
機器用の各種ＩＣの如く、高集積化に１慴い、多ビン化
が強く要請されている。Background technology Today, lead frame materials are used for large computers, VTRs, and OAs.
As with various ICs for devices, there is a strong demand for high integration and multi-bin technology.
すなわち、従来のリードフレーム材の如く、２方向から
リードをとるＤＩＰ（ｄｕａｌ ｉｎｌｉｎｅｐａｃｋ
ａｇｅ ）では、リード数が増加すると素子の容量に肘
するパッケージ占有面積の比率が大となるため、その経
済性の点からリード数が制限される。In other words, like conventional lead frame materials, DIP (dual inline pack) takes leads from two directions.
(age), as the number of leads increases, the ratio of the package area occupied by the element capacity increases, so the number of leads is limited from the viewpoint of economy.
これを解決する一つの方法として、４方向にＪ−ドをと
るＱＦＰ（ｑｕａｄ ｆｌａｔ ｐａｃｋａｇｅ ）方
式が採用されている。As one method to solve this problem, a QFP (quad flat package) system in which J-shaped lines are arranged in four directions has been adopted.
現在多用されているリードフレーム材用クラッド板は、
素オＡの長手方向に連続状にＡｌが被着されるため、リ
ードを４方向に取ることができない。Clad plates for lead frame materials that are currently widely used are:
Since Al is deposited continuously in the longitudinal direction of the element A, leads cannot be taken in four directions.
そこで、刺着用Ｎｉ４０〜５０ｗｔ％含有Ｎｉ−Ｆｅ合
金板を、打抜き加工またはエツチング加工して４方向に
リード部をとり、これらの電極部にＡｌ蒸着またはＡｕ
、 Ａｇメツキする方法が提案され、さらにノート部の
ピッチ幅を挟くすることにより、多ピン化を図っている
。Therefore, a Ni-Fe alloy plate containing 40 to 50 wt% Ni for piercing is punched or etched to form lead portions in four directions, and these electrode portions are coated with Al evaporation or Au.
, a method of Ag plating has been proposed, and by sandwiching the pitch width of the note section, it is possible to increase the number of pins.
また、各リード部先端のポンディング電、極部分にＡｌ
蒸着またはめっき法により、ＡｕまたはＡｇ等の貴金属
を配設したものが使用されているが、中でもＡｌ蒸着の
ものは、リード部先端のポンディング電極部のＡｌ蒸着
部とチップ接続にＡｕ線を用いたポンディングであるた
め、前記チップ上のＡＩ電極とＡｕ線との接触部にＡｕ
−Ａｌ２、Ａｕ２ＡＩ等の金属間化合物が生成され、特
性の劣化を招来し、ＩＣの信頼性を阻害する問題があっ
た。In addition, Al
Products in which noble metals such as Au or Ag are deposited using vapor deposition or plating methods are used, but among them, those with Al vapor deposition include an Au wire between the Al vapor deposited part of the bonding electrode at the tip of the lead and the chip connection. Since this is the bonding method used, Au is applied to the contact area between the AI electrode on the chip and the Au wire.
- There is a problem in that intermetallic compounds such as Al2 and Au2AI are generated, resulting in deterioration of characteristics and inhibiting the reliability of the IC.
また、チップ上のＡＩ電極とＡｕ線接続用のポールポン
ディングのため、熱歪による特性の劣化は避けられず、
その問題点解決のため、封着用Ｎｉ４０〜５０ｗｔ％含
有Ｎｉ−Ｆｅ合金板上に、不連続でかつ等間隔にＡｌを
島状に積層したＡｌ部分クラッド・リードフレーム材も
提案されている。In addition, due to the pole bonding between the AI electrode on the chip and the Au wire, deterioration of characteristics due to thermal distortion is unavoidable.
In order to solve this problem, an Al partial cladding lead frame material has been proposed in which Al is laminated discontinuously and equidistantly in the form of islands on a Ni--Fe alloy plate containing 40 to 50 wt% Ni for sealing.
この島状クラッド材は、ＡＩ線を超音波ポンディングが
できるため、接続系をすべてＡＩ化することができ、熱
歪が小さく、安定したポンディングが可能となり、また
多ビン化を考慮すると、貴金属の使用を節減するともで
きるものである。This island-shaped clad material allows ultrasonic bonding of AI wires, so the entire connection system can be made of AI, resulting in low thermal distortion and stable bonding. It can also reduce the use of precious metals.
従来技術の問題点
前述の如く、Ａｌ部分クラッド仮よりリードフレームを
製作するだめのフォトエツチング加工は、エツチング液
として、従来は、４５％濃度のＦｅＣｌ３溶ｉ夜が用い
られていた。Problems with the Prior Art As mentioned above, 45% concentration of FeCl3 solution has conventionally been used as the etching solution in the photo-etching process for fabricating lead frames with temporary Al cladding.
しかし、かかるエツチング液により加工を行なうと、Ａ
ＩとＮｉ４０〜５０ｗｔ％含有Ｎｉ−Ｆｅ合金間に異種
金属間の腐食により、ＡＩポンディング電極部分にあた
るリード先端部のＡＩが溶解消失するが、方、基板のＮ
ｉ４０〜５０ｗｔ％含有Ｎｉ−Ｆｅ合金は未溶解のまま
残存するため、Ａｌ島状クラッド板をフォトエツチング
加工により、所要形状、寸法のリードフレームを得るこ
とが困難であった。However, when processing is performed using such an etching solution, A
Due to corrosion between different metals between I and the Ni-Fe alloy containing 40 to 50 wt% Ni, the AI at the lead tip, which corresponds to the AI bonding electrode, dissolves and disappears.
Since the Ni--Fe alloy containing 40 to 50 wt% of i remains undissolved, it has been difficult to obtain a lead frame with the desired shape and dimensions by photoetching the Al island-shaped clad plate.
発明の目的
この発明は、ＱＦＰに適した島状クラッド板をフ］トエ
ノチングする際に、島状に配置したＡｌを残して所要の
Ｎｉ−Ｆｅ合金を選択的に溶解できるエツチング液を目
的としている。Purpose of the Invention The object of the present invention is to provide an etching solution that can selectively dissolve the required Ni-Fe alloy while leaving behind the Al arranged in islands when etching an island-shaped cladding plate suitable for QFP. .
発明の概要
発明者はＡｌ島状クラッド板をフォトエツチング加工し
てリードフレームを製造する方法において、リード先端
部のＡＩボンディング電極部分となるＡＩは溶解せずに
残存し、基板のＮｉ４０〜５０ｗｔ％含有Ｎｉ−Ｆｅ合
金板のみが選択的に溶解除去するエツチング液を目的に
、各種溶解液及びその組成について種々検討した結果、
特定量のＦｅ（ＮＯ３）３、ＨＮＯ３からなる水溶液、
あるいはさらに特定量の ＦｅＣｌ３、ＨＣＩ、 Ｎａ
ＮＯ３の少なくとも１種を含有する水溶液をエツチング
液とすることにより、前記目的を達成できる安価なフォ
トエツチング液を提供できることを知見した。Summary of the Invention The inventor discovered that in a method of manufacturing a lead frame by photoetching an Al island-like clad plate, the AI that forms the AI bonding electrode portion at the tip of the lead remains undissolved, and the Ni of the substrate is 40 to 50 wt%. As a result of various studies on various solution solutions and their compositions, with the aim of creating an etching solution that selectively dissolves and removes only the contained Ni-Fe alloy plate, we found that:
An aqueous solution consisting of a specific amount of Fe(NO3)3, HNO3,
Or even specific amounts of FeCl3, HCI, Na
It has been found that by using an aqueous solution containing at least one type of NO3 as an etching solution, it is possible to provide an inexpensive photoetching solution that can achieve the above object.
この発明は、
Ｆｅ（ＮＯ３）ａ ２５ｇ／ｌ〜３００ｇ／１ＨＮＯ
３１０ｇ／／〜３００ｇ／ｌ
を含イｊする水溶液からなることを特徴とするリドフレ
ーム用Ａｌ部分りラッド仮のエツチング液であり、
さらに、
基板のＮｉ４０〜５０ｗｔ％含有Ｎｉ−Ｆｅ合金板を選
択的に溶解除去する速度を所要に調整できるエツチング
液として、
Ｆｅ（ＮＯ３）３ ２５ｇ／／〜３００ｇ／ｌ、ＨＮＯ
３Ｌｏｇ／ｌ〜３００ｇ／ｌにＦｅＣｌ３、ＮａＮＯ３
、ＨＣＩの少なくとも１種を５ｇ／ｌ〜１５０ｇ／ｌ含
有する水溶液からなることを特徴とするエツチング液で
ある。This invention provides Fe(NO3)a 25g/l to 300g/1HNO
This is a temporary etching solution for aluminum parts for lid frames, which is characterized by consisting of an aqueous solution containing 310 g//~300 g/l, and furthermore, selects a Ni-Fe alloy plate containing 40~50 wt% of Ni for the substrate. As an etching solution that can adjust the rate of dissolution and removal as required, Fe(NO3)3 25g//~300g/l, HNO
FeCl3, NaNO3 from 3Log/l to 300g/l
This etching solution is characterized in that it consists of an aqueous solution containing at least one of HCI in an amount of 5 g/l to 150 g/l.
発明の構成
この発明のエツチング液において、主成分のＦｅ（ＮＯ
ａ）ａ、ＨＮＯ３の配合量を限定した理由を説明する。Structure of the Invention In the etching solution of this invention, the main component is Fe (NO
a) a. The reason for limiting the amount of HNO3 blended will be explained.
Ｆｅ（ＮＯ３）３が２５ｇ／１未満では、ＡＩの溶解丑
が増大するので好ましくなく、また３００ｇ／ｌを超え
るとＮｉ４０〜５０ｗｔ％含有Ｎｉ−Ｆｅ合金の溶解量
が減少するので好ましくない。If Fe(NO3)3 is less than 25 g/l, the amount of dissolved AI increases, which is undesirable, and if it exceeds 300 g/l, the amount of dissolved Ni-Fe alloy containing 40 to 50 wt% Ni decreases, which is undesirable.
また、ＨＮＯ３は、１０ｇ／１未満ではＡＩの溶解量が
増大するので好ましくなく、また３００ｇ／ｌを超える
と、Ｎｉ４０〜５０ｗｔ％含有Ｎｉ−Ｆｅ合金の溶解量
が減少するので好ましくない。Further, if HNO3 is less than 10 g/l, the amount of dissolved AI increases, which is undesirable, and if it exceeds 300 g/l, the amount of dissolved Ni-Fe alloy containing 40 to 50 wt% Ni decreases, which is not preferable.
また、ＦｅＣｌ３、ＮａＮＯ３、ＨＣＩは基板のＮｉ４
０〜５０ｗｔ％含有Ｎｉ−Ｆｅ合金板の溶解速度を上昇
させる効果はあるが、あまり含有量が多くなると、被着
材料のＡｌおよび基板のＮｉ４０〜５０ｗｔ％含有Ｎｉ
−Ｆｅ合金の溶解量が増大するため、ＦｅＣｌ３、Ｎａ
ＮＯ３、ＨＣＩを特定量に調整する必要がある。In addition, FeCl3, NaNO3, and HCI are Ni4 of the substrate.
Although it has the effect of increasing the dissolution rate of the Ni-Fe alloy plate containing 0 to 50 wt%, if the content is too high, the Al in the adherend material and the Ni containing 40 to 50 wt% of Ni in the substrate
-FeCl3, Na
It is necessary to adjust NO3 and HCI to specific amounts.
ＦｅＣｌ３、ＮａＮＯ３、ＨＣＩの少なくとも１種が５
ｇ／１未満では、ＡＩの溶解抑制効果が少なくなり好ま
しくなく、また１５０ｇ／ｌを超えると、Ｎｉ４０〜５
０ｗｔ％含有Ｎｉ−Ｆｅ合金の溶解量が増大しすぎるた
め好ましくない。At least one of FeCl3, NaNO3, and HCI is 5
If it is less than 1 g/l, the effect of suppressing the dissolution of AI will decrease, which is not preferable, and if it exceeds 150 g/l, Ni40-5
This is not preferable because the amount of dissolved Ni--Fe alloy containing 0 wt% increases too much.
実施例
基板として板厚０．１５ｍｍ、板幅４０ｍｍ、長さ３０
０ｍｍの４２％Ｎｉ−Ｆｅ合金板を用い、この４２％Ｎ
ｉ−Ｆｅ合金板の中央部の長平方向に、寸法１０１０ｍ
ｍＸ８のＡｌ層を被着材料として、３６ｍｍ間隔で被着
した試験片を作製した。As an example board, the board thickness is 0.15 mm, the board width is 40 mm, and the length is 30 mm.
Using a 0mm 42%Ni-Fe alloy plate, this 42%N
The dimension is 1010m in the longitudinal direction of the central part of the i-Fe alloy plate.
Test pieces were prepared using Al layers of m×8 as the adhesion material and adhered at intervals of 36 mm.
その後、フォトエツチング加工の前処理として脱脂、酸
洗、水洗処理した。Thereafter, degreasing, pickling, and water washing were performed as pretreatments for photoetching.
さらに、太陽光線を遮断したクリーンルームで、試験片
両面にアクリル系光硬化型フォトレジストを塗布形成し
て、安定した被膜となした。Furthermore, an acrylic photocurable photoresist was coated on both sides of the test piece in a clean room shielded from sunlight to form a stable coating.
その後、ネガタイプのリードフレームパターンマスクの
リード先端部が前記レジスト下のＡｌ部分クラッドのＡ
ｌ部に位置合せするように改ね合せて、露光機により紫
外線を照射して、リードフレーム形状の光硬化樹脂層を
形成した。After that, the lead tips of the negative type lead frame pattern mask are attached to the A of the Al partial cladding under the resist.
It was rearranged so as to be aligned with the L part, and ultraviolet rays were irradiated by an exposure machine to form a photocured resin layer in the shape of a lead frame.
さらに、レジストの未露光被膜層を現ｆ象液中−〇溶解
除去し、水洗して、Ａｌ部分クラッド基板上に光硬化型
樹脂被膜のリードパターンを両面に形成した。Furthermore, the unexposed film layer of the resist was removed by dissolving in a developing solution and washed with water to form a lead pattern of a photocurable resin film on both sides of the Al partially clad substrate.
次に、クラッドのＡｌ部でリードフレームパターンのリ
ード先端部にある光硬化型樹脂被膜の形成されてない不
要のＡｌ部は、ＦｅＣｌ３溶液にて溶解し、水洗した。Next, unnecessary Al parts of the cladding where the photocurable resin film was not formed at the lead tips of the lead frame pattern were dissolved in FeCl3 solution and washed with water.
最後に、第を表に組成を示したエツチング液を、順方１
．５ｋｇ／ｃｍ２の条件にて噴射エツチングしてＮｉ４
０〜５０ｗｔ％含有Ｎｉ−Ｆｅ合金板を溶解除去し、水
洗、乾燥後、被膜剥離液を用いて、前記ｔｉｔ脂膜を溶
解剥離後、水洗、乾燥後、Ａｌ部分クラッド板からフォ
トエツチング加工でＡｌ部分クラッドリードフレームを
得た。Finally, apply the etching solution whose composition is shown in Table 1 in the following order.
．． Ni4 was spray etched under the condition of 5 kg/cm2.
After dissolving and removing the Ni-Fe alloy plate containing 0 to 50 wt%, washing with water and drying, using a film removing solution, dissolving and peeling off the tit oil film, washing with water, drying, and photoetching from the Al partial clad plate. An Al partially clad lead frame was obtained.
第１表にエツチング液のエツチング評価を示す。Table 1 shows the etching evaluation of the etching solution.
第１表に示したエツチング速度の測定法は、試験片とし
て厚み０．５ｒｙｕｎＸ幅２０ｍｍＸ長さ３０ｍｍ寸法
の純度９９．９９％の純ＡＩと、厚み０．２５ｍｍ Ｘ
幅２０ｍｍｘ長さ３０ｍｍ寸法のＮｉ４２％−Ｆｅ合金
板をリード線に接続し、第１表に示したエツチング液内
に浸漬して、試験片の溶解前後の板厚差を測定してその
差にて表わした。The method for measuring the etching speed shown in Table 1 is to use pure AI with a purity of 99.99% with dimensions of 0.5 ryun thick x 20 mm wide x 30 mm long as a test piece, and 0.25 mm thick x 30 mm long.
Connect a 42% Ni-Fe alloy plate with dimensions of 20 mm width x 30 mm length to the lead wire, immerse it in the etching solution shown in Table 1, measure the difference in plate thickness before and after dissolving the test piece, and calculate the difference. It was expressed as
また、Ａｌ１１Ｊ離テストは、フォトエツチング加工に
て得られたリードフレームのリード部分に１０ｍｍ幅の
市販のセロファンテープを貼付けて、セロファンテープ
を剥離して、セロファンテーラ１９着聯Ｊ離したＡｌリ
ード本故を倣え、−Ｆ記評価をｔ〜ｊな゛った。In addition, in the Al11J release test, commercially available cellophane tape with a width of 10 mm was pasted on the lead part of the lead frame obtained by photoetching, the cellophane tape was peeled off, and the Al lead book that had been released using Cellophane Tailor 19 was attached. By following the example, I got a grade of -F from t~j.
古「１曲
（−）印；剥離リード本数 Ｏ本／２４本△印；剥離リ
ード本数 １〜１２本ノ２４本×印；剥離リード本数
１３〜２４本７２４本また、第１表の断面粒界腐食状況
は、フ」トエソチング加工にて得られたリードパターン
、リード部断面を顕微鏡にて倍率１００倍でＷ見察し、
下記評価を行なった。Old "1 song (-) mark; Number of peeled leads O pieces / 24 pieces △ mark; Number of peeled leads 1 to 12 of 24 × mark; Number of peeled leads
13 to 24 pieces 724 pieces In addition, the cross-sectional grain boundary corrosion status in Table 1 was determined by observing the cross-section of the lead pattern and lead part obtained by the soft etching process using a microscope at a magnification of 100 times.
The following evaluation was performed.
評１曲
○印；粒界腐食なし
△印；少し粒界腐食あり
×印；粒界腐食発生多し
第１表のフォトレジスト密着性は、第１表の工２・チン
ダ液を噴射エツチングした後、リ−１・゛フレム上のレ
ジスト被膜の状況を５ｉ、Ｇｊ 微鏡にて培率２ｏｔ；
’。Evaluation 1: ○: No grain boundary corrosion: △: Slight grain boundary corrosion: ×: Intergranular corrosion occurred frequently After that, the condition of the resist film on the leaf 1 frame was examined using a 5i and Gj microscope at a culture rate of 2ot;
'.
にて測定し下記評価を行なった。The following evaluations were made.
評価
○印；良品（Ａｌ部、４２合金部被膜密着）△印；不良
（ＡＩ部１ケ所以上ＡＩ消失あり）×印；不良（Ａｌ部
消失している）
第１表に示したこの発明のエツチング液を使用すること
により、Ａｌ部分クラッド板から得られたノードフレー
ムの先端部のＡＩホンディング電極部のＡＩ形状に侵食
変形されることなく、被着材料のＡＩと基板のＮｉ４２
％、Ｆｅ合金板の密着性は良好で、また表面光沢性も平
滑性も良好であった。Evaluation ○ mark: Good product (Al part, 42 alloy part coating adhesion) △ mark: Defective (AI disappears in one or more parts of AI part) × mark: Defective (Al part disappears) This invention shown in Table 1 By using an etching solution, the AI of the adherend material and the Ni42 of the substrate can be removed without being eroded and deformed to the AI shape of the AI honding electrode part at the tip of the node frame obtained from the Al partial clad plate.
%, the adhesion of the Fe alloy plate was good, and the surface gloss and smoothness were also good.
発明の効果
この発明は、特定量のＦｅ（ＮＯ３）ａ、ＨＮＯ３から
なる水溶液、あるいはさらに特定量のＦｅＣｌ３、ＨＣ
Ｉ。Effects of the Invention This invention provides an aqueous solution consisting of a specific amount of Fe(NO3)a, HNO3, or a further specific amount of FeCl3, HC
I.
ＮａＮＯ３の少なくとも１種を含有する水溶液をエツチ
ング液としてＡｌ部分クラッド板から所要形状、寸法の
リードフレームにフォトエツチング加工すると、被着材
料の部分ＡＩは溶解されずに残存し、基板のＮｉ４０〜
５０ｗｔ％含有Ｎｉ−Ｆｅ合金板のみが選択的に、かつ
エツチング速度も十分速くエツチングされて、溶解除去
されると共に、その選択エツチング能力は長時間維持で
き、フォトレジストの密着性に何等影響を与えない安価
なフォトエツチング液を提供できる。When photo-etching is performed from an Al partial clad plate to a lead frame of the desired shape and dimensions using an aqueous solution containing at least one type of NaNO3 as an etching liquid, the portion AI of the adherend material remains undissolved, and the Ni40 to Ni40 of the substrate remains.
Only the Ni-Fe alloy plate containing 50 wt% is etched selectively and at a sufficiently high etching speed to be dissolved and removed, and its selective etching ability can be maintained for a long time without affecting the adhesion of the photoresist. It is possible to provide an inexpensive photo-etching solution.
以下余白Margin below
Claims (1)
＿３１０ｇ／ｌ〜３００ｇ／ｌ を含有する水溶液からなることを特徴とするリードフレ
ーム用Ａｌ部分クラッド板のエッチング液。 ２ Ｆｅ（ＮＯ＿３）＿３２５ｇ／ｌ〜３００ｇ／ｌＨＮＯ
＿３１０ｇ／ｌ〜３００ｇ／ｌ と、ＮａＮＯ＿３、ＨＣｌ、ＦｅＣｌ＿３の少なくとも
１種を５ｇ／ｌ〜１５０ｇ／ｌを含有する水溶液からな
ることを特徴とするリードフレーム用Ａｌ部分クラッド
板のエッチング液。[Claims] 1 Fe(NO_3)_325g/l~300g/lHNO
An etching solution for an Al partial cladding plate for a lead frame, characterized by comprising an aqueous solution containing 310 g/l to 300 g/l. 2 Fe(NO_3)_325g/l~300g/lHNO
An etching solution for an Al partial cladding plate for a lead frame, comprising an aqueous solution containing 310 g/l to 300 g/l and 5 g/l to 150 g/l of at least one of NaNO_3, HCl, and FeCl_3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26259788A JPH02111886A (en) | 1988-10-18 | 1988-10-18 | Etching solution for partially al clad sheet for lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26259788A JPH02111886A (en) | 1988-10-18 | 1988-10-18 | Etching solution for partially al clad sheet for lead frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02111886A true JPH02111886A (en) | 1990-04-24 |
| JPH0432153B2 JPH0432153B2 (en) | 1992-05-28 |
Family
ID=17378010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26259788A Granted JPH02111886A (en) | 1988-10-18 | 1988-10-18 | Etching solution for partially al clad sheet for lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02111886A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105907396A (en) * | 2015-02-23 | 2016-08-31 | 东友精细化工有限公司 | Etching solution composition for indium oxide layer and manufacturing method of an array substrate for liquid crystal display using the same |
| CN111058056A (en) * | 2018-10-17 | 2020-04-24 | 哈尔滨工业大学 | Preparation method of self-supporting nickel phosphide foam electrode for water decomposition |
-
1988
- 1988-10-18 JP JP26259788A patent/JPH02111886A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105907396A (en) * | 2015-02-23 | 2016-08-31 | 东友精细化工有限公司 | Etching solution composition for indium oxide layer and manufacturing method of an array substrate for liquid crystal display using the same |
| CN111058056A (en) * | 2018-10-17 | 2020-04-24 | 哈尔滨工业大学 | Preparation method of self-supporting nickel phosphide foam electrode for water decomposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0432153B2 (en) | 1992-05-28 |
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