JPH02107593A - Cluster forming equipment for vapor phase epitaxial growth - Google Patents
Cluster forming equipment for vapor phase epitaxial growthInfo
- Publication number
- JPH02107593A JPH02107593A JP25735788A JP25735788A JPH02107593A JP H02107593 A JPH02107593 A JP H02107593A JP 25735788 A JP25735788 A JP 25735788A JP 25735788 A JP25735788 A JP 25735788A JP H02107593 A JPH02107593 A JP H02107593A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- vapor phase
- crust
- melt
- end plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012808 vapor phase Substances 0.000 title claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 21
- 238000005192 partition Methods 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001257 hydrogen Substances 0.000 abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 9
- 229910017009 AsCl3 Inorganic materials 0.000 abstract 1
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 abstract 1
- 206010039509 Scab Diseases 0.000 description 25
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- 238000001947 vapour-phase growth Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 241000238557 Decapoda Species 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 230000001112 coagulating effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、クロライド法、ハイドライド法等により、Ｉ
ＩＩ−Ｖ族化合物半導体、■−■族化合物半導体等を気
相エピタキシャル成長させるときに用いる化合物クラス
トを形成する装置に関する。Detailed Description of the Invention (Industrial Field of Application) The present invention provides an I
The present invention relates to an apparatus for forming a compound crust used in vapor phase epitaxial growth of II-V group compound semiconductors, ■-■ group compound semiconductors, etc.
（従来の技術）
第２図は、ＧａＡｓ半導体を例にした従来のクロライド
法を実施するための装置の概念図である。(Prior Art) FIG. 2 is a conceptual diagram of an apparatus for carrying out a conventional chloride method using a GaAs semiconductor as an example.
原料領域にＧａｍ液を収容したボートを置き、方、Ａｓ
ｃＩｙ液を水素でバブリングして原料領域に送り、＾Ｓ
雰囲気の下でＧａ融液の表面にＧａＡｓのクラストを形
成しく予砒化）、その後、原料領域を８５０℃に加熱し
てＧａＡｓ（クラスト）とＩＩＣＦを反応させ、ＧａＣ
１とＡｓ４を生成して成長領域に輸送し、７５０ ’Ｃ
に加熱された成長領域ではＧａＣ１が水素により還元さ
れ、Ａｓ４と反応して、基板ヒにＧａＡｓ単結晶薄膜を
形成する。クラスト上の反応と基板上の反応を式で示す
と次ぎの様になる。A boat containing Gam liquid is placed in the raw material area, and As
Bubble the cIy liquid with hydrogen and send it to the raw material area, ^S
(pre-arsenization to form a GaAs crust on the surface of the Ga melt in an atmosphere), then the raw material area is heated to 850°C to react GaAs (crust) and IICF, and the GaAs (crust) is reacted with IICF.
1 and As4 are generated and transported to the growth region at 750'C.
In the heated growth region, GaCl is reduced by hydrogen and reacts with As4 to form a GaAs single crystal thin film on the substrate. The reaction on the crust and the reaction on the substrate are expressed as follows.
２ＡｓＣＩ３＋３１１．＝ ｌ／２Ａｓ＋ ６１１ＣＪ
２ＧａＡｓ （クラスト） ＋ ２ＨＣ１＝ ２ＧａＣ
ｆ ＋ １／２Ａｓ４＋ｌ１ｙ２ＧａＣｌ＋ １／２Ａ
ｓ、＋ ＩＩ、−２ＧａＡｓ（単結晶）＋２１１Ｃ／（
発明が解決しようとする課題）
従来の装置では、結晶成長を行う反応管内に原料領域を
設けて、クラストを形成していたので、原料の消費量が
多い場合、クラスト形成の反応効率を厳密に制御しよう
とする場合には、結晶成長に要する時間よりも、クラス
ト形成により多（の時間を必要とするため、気相エピタ
キシャル成長装置の稼働率を大きく制約するという問題
があった。2AsCI3+311. = l/2As+ 611CJ
2GaAs (crust) + 2HC1= 2GaC
f + 1/2As4+l1y2GaCl+ 1/2A
s, + II, -2GaAs (single crystal) +211C/(
Problems to be Solved by the Invention) In conventional equipment, a raw material region was provided in the reaction tube for crystal growth to form a crust, so when the amount of raw material consumed is large, it is necessary to strictly control the reaction efficiency for crust formation. If control is attempted, there is a problem in that more time is required for crust formation than for crystal growth, which greatly limits the operating rate of the vapor phase epitaxial growth apparatus.
本発明は、上記の問題点を解消し、結晶成長から分離し
た状態で効率的にクラスト形成を行うための装置を提供
しようとするものである。The present invention aims to solve the above-mentioned problems and provide an apparatus for efficiently forming a crust in a state separated from crystal growth.
（課題を解決するための手段）
本発明は、原料ガス雰囲気の下で原料融液の表面に化合
物クラストを形成する気相エピタキシャル成長用クラス
ト形成装置において、反応管を隔壁で複数の隔室をつく
り、原料融液を収容するボートを該隔室に挿入可能とし
、また、反応管の一端に端板を設け、原料ガス導入管を
該端板をｒ１通させてそれぞれのボートのＬ方に開放さ
せたことを特徴とするクラスト形成装置である。(Means for Solving the Problems) The present invention provides a crust forming apparatus for vapor phase epitaxial growth that forms a compound crust on the surface of a raw material melt in a raw material gas atmosphere, in which a plurality of compartments are formed in a reaction tube using partition walls. , a boat containing the raw material melt can be inserted into the compartment, and an end plate is provided at one end of the reaction tube, and the raw material gas introduction tube is passed through the end plate r1 and opened to the L side of each boat. This is a crust forming device characterized by:
（作用）
第１図は、本発明の１具体例である気相エピタキシャル
成長用クラスト形成装置の概念図であり、同図（Ａ）は
正断面図、（Ｂ）は（Ａ）のＩＩ断面図である。この装
置は、反応管ｌを隔壁２で区画して８つの隔室を設け、
原料融液４を収容したボート３をそれぞれの隔室に挿入
する。(Function) FIG. 1 is a conceptual diagram of a crust forming apparatus for vapor phase epitaxial growth which is a specific example of the present invention, in which (A) is a front sectional view and (B) is a II sectional view of (A). It is. This device divides a reaction tube 1 with a partition wall 2 to provide eight compartments,
A boat 3 containing raw material melt 4 is inserted into each compartment.
反応管１の一端は端板７で閉じ、水素導入管５を端板７
に結合して隔室に水素を導入可能とし、かつ、原料ガス
導入管６は端板７を貫通してボート３の上方で開放させ
る。なお、ボート３の一端にはリング８が設けられてお
り、ソースボート青脱時に操作棒を引っ掛け、隔室から
引き出す役割をする。また、反応管１の右方には、ライ
ナー管９が挿入されており、反応管に反応生成物等が直
接凝固することを防止する役割をする。そして、ヒータ
から外れたライナー管９内には未反応生成物等１０が付
着するので、適当な時点で別のライナー管と交換するこ
とができる。One end of the reaction tube 1 is closed with an end plate 7, and the hydrogen introduction tube 5 is closed with an end plate 7.
The raw material gas introduction pipe 6 penetrates the end plate 7 and opens above the boat 3. A ring 8 is provided at one end of the boat 3, and serves to hook the operating rod and pull it out from the compartment when the source boat is released. Further, a liner tube 9 is inserted into the right side of the reaction tube 1, and serves to prevent reaction products and the like from directly coagulating in the reaction tube. Since unreacted products and the like 10 adhere to the liner tube 9 removed from the heater, the liner tube can be replaced with another liner tube at an appropriate time.
以下、ＧａＡｓクラストを形成する場合を例にして説明
する。それぞれのボートにＧａを収容して、該ボートを
反応管の隔室に挿入する。その後、反応管の外側より加
熱して、Ｇａ融液を所定の温度に維持する。次いで、＾
ｓＣ１液中にキャリアガスを吹き込んで、＾５ＣＱ３ガ
スをＧａ融液上に供給する。そして、別途水素を隔室に
供給することにより、総てのボート内のＧａ融液上にＧ
ａＡｓクラストを形成する。それから、ＧａＡｓを保有
するボートの１つを隔室から取り出して、気相成長装置
に装填することにより、気相成長を繰り返す。気相成長
の反応率が低下してＧａＡｓクラストが一定量消費され
た段階で新たなボートと交換して気相成長を続ける。Hereinafter, the case of forming a GaAs crust will be explained as an example. Ga is contained in each boat and the boats are inserted into the compartments of the reaction tube. Thereafter, the Ga melt is maintained at a predetermined temperature by heating from the outside of the reaction tube. Next, ^
A carrier gas is blown into the sC1 liquid to supply ^5CQ3 gas onto the Ga melt. By separately supplying hydrogen to the compartment, G is added to the Ga melt in all the boats.
Form an aAs crust. One of the boats containing GaAs is then removed from the compartment and loaded into the vapor growth apparatus to repeat the vapor growth. When the reaction rate of vapor phase growth decreases and a certain amount of GaAs crust is consumed, the boat is replaced with a new one and vapor phase growth is continued.
このようにクラスト形成装置を、気相成長装置から分離
して多数のソースボートにクラストを同時に形成可能で
あるところから、ソースボートの交換時を除いて気相成
長を続けて行うことができるようになり、また、反応効
率の均一なソースボートを次々に交換できるところから
、長期間に亙って気相成長を効率的に行うことができる
。In this way, the crust forming device can be separated from the vapor phase growth device and crust can be formed on multiple source boats at the same time, making it possible to continue vapor phase growth except when replacing source boats. In addition, since source boats with uniform reaction efficiency can be replaced one after another, vapor phase growth can be carried out efficiently over a long period of time.
以１：、 ＧａＡｓを例にして説明したが、ＩｎＰ、
ＺｎＳ。Below 1: Although the explanation was given using GaAs as an example, InP,
ZnS.
Ｚｎ５ｅなどにも同様に適用することができる。It can be similarly applied to Zn5e and the like.
（実施例）
第１図のクラスト形成装置を用いて、ＧａＡｓクラスト
を作製し、ソースボート交換方式でＧａＡｓを気相エピ
タキシャル成長させた。(Example) A GaAs crust was produced using the crust forming apparatus shown in FIG. 1, and GaAs was vapor phase epitaxially grown using a source boat exchange method.
８つのボートにはそれぞれ８００ｇのＧａをチャージし
、９００°Ｃに加熱して溶融した。一方、２５°Ｃに保
ったＡｓＣＬ液中に水素をバブリングさせ、八ｓ（Ｊ！
３／ｆｉｔを１０００ｓｃｃａ＋ （０°Ｃ，Ｉａｔｍ
の標準状態におけるガス流ｆｆ１ｃｍ’／ｗｉｎ）で原
料ガス導入管を介してＧａ融液上に供給し、水素導入管
を介して水素キャリアガスを１０００ｓｃｃＬ１で送り
、Ａｓの過飽和状態を１０時間維持し、ＧａＡｓクラス
トを形成した。Each of the eight boats was charged with 800 g of Ga and heated to 900°C to melt it. On the other hand, hydrogen was bubbled into the AsCL liquid kept at 25°C, and 8s (J!
3/fit to 1000scca+ (0°C, Iatm
A gas flow rate of 1 cm'/win) in the standard state was supplied onto the Ga melt through the raw material gas introduction pipe, and hydrogen carrier gas was sent at 1000 sccL1 through the hydrogen introduction pipe to maintain the supersaturated state of As for 10 hours. , a GaAs crust was formed.
このようにＧａＡｓクラストを形成したボートを、気相
成長装置に移して、エピタキシャル成長を５回繰り返し
た。１回目の成長速度は３．２μｍ／ｈｒであったが、
５回目には２．４μａ＋／ｈｒに低下した。その時点で
別のボートと交換して同様のエピタキシャル成長を行っ
たところ、１回目に３．１μＩｌ／ｈｒで、５回目には
２．４μｍ／ｈｒであって、エピタキシャル層の厚さに
再現性が得られた。The boat with the GaAs crust formed thereon was transferred to a vapor phase growth apparatus, and epitaxial growth was repeated five times. The first growth rate was 3.2 μm/hr,
At the fifth time, it decreased to 2.4 μa+/hr. At that point, when I replaced it with another boat and performed the same epitaxial growth, the growth rate was 3.1μIl/hr in the first time, and 2.4μm/hr in the fifth time, and the epitaxial layer thickness was not reproducible. Obtained.
（発明の効果）
本発明は、」１記の構成を採用することにより、−度に
多数の化合物クラストを準備することができ、気相成長
装置に安定した原料の供給を可能とし、かつ、気相成長
装置の稼働率を向上させることができた。(Effects of the Invention) The present invention employs the configuration described in item 1, whereby a large number of compound crusts can be prepared at one time, and a stable supply of raw materials to a vapor phase growth apparatus is possible, and We were able to improve the operating rate of the vapor phase growth equipment.
第１図は本発明の１具体例である化合物クラストの形成
装置の概念図、第２図は従来の気相エビタキ／ヤル成長
装置の概念図である。
代理人（弁理士〕 半石不１ｊ子FIG. 1 is a conceptual diagram of a compound crust forming apparatus which is a specific example of the present invention, and FIG. 2 is a conceptual diagram of a conventional vapor phase shrimp/yel growth apparatus. Agent (patent attorney) Fuichiko Hanishi
Claims (1)
を形成する気相エピタキシャル成長用クラスト形成装置
において、反応管を隔壁で複数の隔室をつくり、原料融
液を収容するボートを該隔室に挿入可能とし、また、反
応管の一端に端板を設け、原料ガス導入管を該端板を貫
通させてそれぞれのボートの上方に開放させたことを特
徴とするクラスト形成装置。In a crust forming apparatus for vapor phase epitaxial growth that forms a compound crust on the surface of a raw material melt in a raw material gas atmosphere, a reaction tube is formed with partition walls to form a plurality of compartments, and a boat containing the raw material melt is placed in each compartment. What is claimed is: 1. A crust forming device which can be inserted into a reaction tube and is characterized in that an end plate is provided at one end of the reaction tube, and a raw material gas introduction tube is passed through the end plate and opened above each boat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63257357A JP2711327B2 (en) | 1988-10-14 | 1988-10-14 | Crust forming apparatus for vapor phase epitaxy growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63257357A JP2711327B2 (en) | 1988-10-14 | 1988-10-14 | Crust forming apparatus for vapor phase epitaxy growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02107593A true JPH02107593A (en) | 1990-04-19 |
| JP2711327B2 JP2711327B2 (en) | 1998-02-10 |
Family
ID=17305259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63257357A Expired - Lifetime JP2711327B2 (en) | 1988-10-14 | 1988-10-14 | Crust forming apparatus for vapor phase epitaxy growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2711327B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010502833A (en) * | 2006-08-31 | 2010-01-28 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | Fluid delivery based on solid precursors utilizing controlled solid morphology |
| US9004462B2 (en) | 2002-07-23 | 2015-04-14 | Entegris, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
| US10385452B2 (en) | 2012-05-31 | 2019-08-20 | Entegris, Inc. | Source reagent-based delivery of fluid with high material flux for batch deposition |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6272592A (en) * | 1985-09-27 | 1987-04-03 | New Japan Radio Co Ltd | Semiconductor vapor growth device |
-
1988
- 1988-10-14 JP JP63257357A patent/JP2711327B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6272592A (en) * | 1985-09-27 | 1987-04-03 | New Japan Radio Co Ltd | Semiconductor vapor growth device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9004462B2 (en) | 2002-07-23 | 2015-04-14 | Entegris, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
| US9469898B2 (en) | 2002-07-23 | 2016-10-18 | Entegris, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
| US10465286B2 (en) | 2002-07-23 | 2019-11-05 | Entegris, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
| JP2010502833A (en) * | 2006-08-31 | 2010-01-28 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | Fluid delivery based on solid precursors utilizing controlled solid morphology |
| US10895010B2 (en) | 2006-08-31 | 2021-01-19 | Entegris, Inc. | Solid precursor-based delivery of fluid utilizing controlled solids morphology |
| US10385452B2 (en) | 2012-05-31 | 2019-08-20 | Entegris, Inc. | Source reagent-based delivery of fluid with high material flux for batch deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2711327B2 (en) | 1998-02-10 |
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