JPH02102584A - Manufacture of magnetoresistive element - Google Patents
Manufacture of magnetoresistive elementInfo
- Publication number
- JPH02102584A JPH02102584A JP63254867A JP25486788A JPH02102584A JP H02102584 A JPH02102584 A JP H02102584A JP 63254867 A JP63254867 A JP 63254867A JP 25486788 A JP25486788 A JP 25486788A JP H02102584 A JPH02102584 A JP H02102584A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetoresistive element
- semiconductor thin
- film
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims description 17
- 239000010408 film Substances 0.000 abstract description 19
- 238000001704 evaporation Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract description 2
- 239000011261 inert gas Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＩｎ／Ｓｂ半導体薄膜を用いた磁気抵抗素子の
製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a magnetoresistive element using an In/Sb semiconductor thin film.
従来、磁気抵抗素子としてＩｎ／Ｓｂのような半導体の
薄膜が６０〜８０°Ｃまでの最高温度で用いられてきた
が、このＩｎ／Ｓｂ半導体の薄膜は多結晶体であり、長
時間経過すると結晶粒子が成長し、粒径が変化するため
、薄膜のホール移動度が変化し、従って磁気抵抗素子の
磁気抵抗変化率が徐々に変化してしまうという問題点が
あった。Conventionally, thin films of semiconductors such as In/Sb have been used as magnetoresistive elements at maximum temperatures of 60 to 80°C, but this thin film of In/Sb semiconductors is polycrystalline and deteriorates over time. As the crystal grains grow and the grain size changes, the hole mobility of the thin film changes, resulting in a problem that the rate of change in magnetoresistance of the magnetoresistive element gradually changes.
Ｉｎ／Ｓｂ半導体の薄膜のホール移動度を向上、且つ安
定化させるために、この薄膜を熱処理する方法が各積卸
られているが（特開昭５０−９３７３号、同５０−１０
９８４号、同５０−５９２０４号、同５０−１５６３５
６号、同５２−５２３６４、特公昭５１−１５５５号、
同５５−２６６３７号、同５Ｂ−２９２５４号）、いず
れも処理方法が複雑である。In order to improve and stabilize the hole mobility of thin films of In/Sb semiconductors, various methods have been proposed for heat-treating these thin films (Japanese Patent Laid-Open Nos. 50-9373 and 50-10).
No. 984, No. 50-59204, No. 50-15635
No. 6, No. 52-52364, Special Publication No. 51-1555,
No. 55-26637 and No. 5B-29254), both have complicated processing methods.
例えば、特開昭５２−５２３６４号、特公昭５５−２６
６３７号公報に記載の方法によると、蒸着法によって形
成されたＩｎ／Ｓｂ半導体の薄膜を５００°Ｃ以上、即
ち、溶融点付近〜溶融点以上で１時間以内の比較的短か
い時間加熱し、Ｉｎ／Ｓｂの再結晶化によってホール移
動度を向上させている。しかしながら、この再結晶化の
過程において結晶の凝集、および成分ｓｂの蒸発が起こ
りやすく、それを防ぐためにＩｎ／Ｓｂ半導体の薄膜に
保護膜を付けてから熱処理を行い、熱処理後、保護膜を
取り除くという煩雑な工程を必要としている。For example, JP-A-52-52364, JP-A-55-26
According to the method described in Publication No. 637, a thin film of an In/Sb semiconductor formed by a vapor deposition method is heated at 500° C. or higher, that is, from near the melting point to above the melting point, for a relatively short period of one hour or less, Hole mobility is improved by recrystallization of In/Sb. However, during this recrystallization process, agglomeration of crystals and evaporation of the component sb tend to occur, and to prevent this, a protective film is applied to the In/Sb semiconductor thin film before heat treatment, and the protective film is removed after the heat treatment. This requires a complicated process.
上記のような煩雑な工程を含まない、長期間の使用でも
安定なＩｎ／Ｓｂ半導体の薄膜を用いた磁気抵抗素子の
製造方法が望まれている。There is a desire for a method of manufacturing a magnetoresistive element using an In/Sb semiconductor thin film that does not involve the above-mentioned complicated steps and is stable even after long-term use.
本発明者等は、上記の問題が解決された、磁気抵抗素子
の製造方法について鋭意研究した結果、本発明に至った
。The present inventors conducted intensive research on a method for manufacturing a magnetoresistive element that solved the above problems, and as a result, they arrived at the present invention.
本発明は、Ｉｎ／Ｓｂ半導体薄膜を用いた磁気抵抗素子
を製造する際に、Ｉｎ／Ｓｂ半導体薄膜を１５０〜４８
０℃で、５〜２００時間加熱処理することを特徴とする
磁気抵抗素子の製造方法に関する。In the present invention, when manufacturing a magnetoresistive element using an In/Sb semiconductor thin film, the In/Sb semiconductor thin film is
The present invention relates to a method for manufacturing a magnetoresistive element, characterized by heat treatment at 0° C. for 5 to 200 hours.
本発明によれば、Ｉｎ／Ｓｂ半導体薄膜を１５０〜４８
０℃の比較的低い温度で、５〜２００時間の長時間のお
だやかな加熱処理により、磁気抵抗素子を長期間使用し
た後でもＩｎ／Ｓｂ半導体の薄膜のホール移動度が変化
せず、従って素子の磁気抵抗変化率が一定で安定化され
た磁気抵抗素子の製造方法が提供される。According to the present invention, the In/Sb semiconductor thin film is
By applying gentle heat treatment for 5 to 200 hours at a relatively low temperature of 0°C, the hole mobility of the In/Sb semiconductor thin film does not change even after long-term use of the magnetoresistive element, and therefore the element Provided is a method for manufacturing a magnetoresistive element in which the rate of change in magnetoresistance is constant and stabilized.
本発明のＩｎ／Ｓｂ半導体薄膜の熱処理は、通常よく知
られた蒸着法などによって、ガラス、セラミックスなど
の基板の上に形成されたＩｎ／Ｓｂ半導体の薄膜を、空
気、不活性ガス、あるいはそれらの混合ガス雰囲気下、
または真空中で、温度１５０〜４８０℃、より好ましく
は２００〜４５０°Ｃの範囲内において、５〜２００時
間、より好ましくは１０〜１００時間電気炉などの加熱
装置で行うことができる。In the heat treatment of the In/Sb semiconductor thin film of the present invention, the In/Sb semiconductor thin film formed on a substrate such as glass or ceramics by a well-known vapor deposition method is heated with air, an inert gas, or Under a mixed gas atmosphere of
Alternatively, it can be carried out in vacuum at a temperature of 150 to 480°C, more preferably 200 to 450°C, for 5 to 200 hours, more preferably 10 to 100 hours using a heating device such as an electric furnace.
本発明の熱処理では、ｓｂ酸成分蒸発によるＩｎ／ｓｂ
半導体の薄膜の組成変化が起こりに（いので、表面に予
め保護膜を形成し、熱処理後の保護膜除去の必要性がな
い、従って、磁気抵抗素子の製造のプロセスが簡略で生
産性が高い。In the heat treatment of the present invention, In/sb
Because the composition of the semiconductor thin film does not change, a protective film is formed on the surface in advance, and there is no need to remove the protective film after heat treatment. Therefore, the manufacturing process of magnetoresistive elements is simple and highly productive. .
また、本発明における熱処理は空気中で行うこともでき
、必ずしも気密性の要求される高価な真空排気、加熱装
置を必要としない、 Ｉｎ／Ｓｂ半導体薄膜の熱処理に
おいては、Ｉｎ／Ｓｂ薄膜上に極薄い表面酸化膜が形成
されることもあるが、希塩酸などで容易に酸化膜を除去
することができる。Furthermore, the heat treatment in the present invention can be performed in air, and does not necessarily require expensive evacuation or heating equipment that requires airtightness. Although an extremely thin surface oxide film may be formed, the oxide film can be easily removed using dilute hydrochloric acid or the like.
（実施例） 以下に本発明の実施例を示す。(Example) Examples of the present invention are shown below.
実施例１
コーニング７０５９のガラス基板上に真空蒸着法で膜厚
的０．５〜１μｍのＩｎ／Ｓｂ膜（元素比Ｉｎ ： Ｓ
ｂ膜 １ 、３０ ：１）を形成した。この膜のホール
移動度は１５０００ｃ＋ｊｌ／Ｖｓ、 （室温）であっ
た。Example 1 An In/Sb film with a thickness of 0.5 to 1 μm (element ratio In:S
b film 1,30:1) was formed. The hole mobility of this film was 15000c+jl/Vs (room temperature).
前記のＩ ｎ／Ｓｂ膜を空気中、クリーンオーブンを使
用し、２００℃で６０時間加熱処理を行うた結果、膜の
ホール移動度は２６０００ｃｊ／Ｖｓ、 （室温）であ
った。The above In/Sb film was heat-treated at 200° C. for 60 hours in air using a clean oven, and as a result, the hole mobility of the film was 26,000 cj/Vs (at room temperature).
加熱処理を行ったＩｎ／Ｓｂ膜を用いて製造した磁気抵
抗素子の磁気抵抗変化率（Ｒ１／ＲＯ）は、磁界４ＫＧ
印加で約２．７であり、この磁気抵抗素子を１２５℃、
１０００時間まで放置した後でも、磁気抵抗変化率は変
動幅８％以内で変わらなかった。The rate of change in magnetoresistance (R1/RO) of a magnetoresistive element manufactured using a heat-treated In/Sb film is determined by a magnetic field of 4 KG.
It is about 2.7 when applied, and this magnetoresistive element is heated at 125°C.
Even after being left for up to 1000 hours, the rate of change in magnetoresistance did not change within 8%.
実施例２
ホール移動度が９０４０ａｉ／Ｖｓ 、 （室温）のＩ
ｎ／ Ｓｂ膜（元素比１ｎ：Ｓｂ・１．２３：１）を用
いて、加熱処理条件をアルゴン中（Ｉｆ／ｍａｉｎ、）
、４５０℃、１０時間にした以外は実施例１と同様に加
熱処理を行った。加熱処理後の膜のホール移動度は２４
５００ｃｄ／Ｖｓ、 （室温）であった。Example 2 I with hole mobility of 9040ai/Vs (room temperature)
Using an n/Sb film (element ratio 1n:Sb, 1.23:1), heat treatment conditions were set in argon (If/main, )
The heat treatment was performed in the same manner as in Example 1 except that the temperature was 450° C. for 10 hours. The hole mobility of the film after heat treatment is 24
It was 500 cd/Vs (room temperature).
加熱処理を行ったＩｎ／Ｓｂ膜を用いて製造した磁気抵
抗素子の磁気抵抗変化率（Ｒ１／ＲＯ）は、磁界４ＫＧ
印加で約２．６であり、この磁気抵抗素子を１２５℃、
１０００時間まで放置した後でも、変動幅８％以内で変
わらなかった。The rate of change in magnetoresistance (R1/RO) of a magnetoresistive element manufactured using a heat-treated In/Sb film is determined by a magnetic field of 4 KG.
It is about 2.6 when applied, and this magnetoresistive element is heated at 125°C.
Even after being left for up to 1000 hours, there was no change within a fluctuation range of 8%.
比較例１
加熱処理を全く行わなかったホール移動度が１５０００
ｃｄ／ｖ、ｓｅｔ、 （室温）のＩｎ／Ｓｂ膜（元素比
Ｉｎ：５ｂ＝１．２５：１）を用いて製造した磁気抵抗
素子の磁気抵抗変化率（Ｒｍ／Ｒｏ）は、磁界４ＫＧ印
加で約１．５であり、この磁気抵抗素子を１２５℃、１
０００時間放置したところ、１３０％以上も変動してい
た。Comparative Example 1 Hole mobility without any heat treatment was 15000
The rate of change in magnetoresistance (Rm/Ro) of a magnetoresistive element manufactured using an In/Sb film (element ratio In:5b=1.25:1) at (room temperature) is determined by applying a magnetic field of 4 KG. is approximately 1.5, and this magnetoresistive element is heated at 125°C and 1.
After being left for 1,000 hours, it had fluctuated by more than 130%.
比較例２
加熱処理を２００°Ｃで１時間行った以外は、実施例１
と同様に磁気抵抗素子を製造し、磁気抵抗変化率の１２
５°Ｃにおける時間変化を調べた。Comparative Example 2 Example 1 except that the heat treatment was performed at 200°C for 1 hour.
A magnetoresistive element was manufactured in the same manner as above, and the magnetoresistive rate of change was 12.
Changes over time at 5°C were investigated.
１０００時間放置したところ、９０％以上も変動してい
た。When it was left for 1000 hours, it had fluctuated by more than 90%.
比較例３
加熱処理を５５０°Ｃで１０時間行った以外は、実施例
１と同様に加熱処理膜を製造したところ、ｓｂ元素の蒸
発、Ｉｎ／Ｓｂ膜の溶融による凝集が起き、磁気抵抗素
子を製造することができなかった。Comparative Example 3 A heat-treated film was produced in the same manner as in Example 1 except that the heat treatment was performed at 550°C for 10 hours. However, evaporation of the sb element and aggregation due to melting of the In/Sb film occurred, resulting in a failure in the magnetoresistive element. could not be manufactured.
Claims (1)
際に、Ｉｎ／Ｓｂ半導体薄膜を１５０〜４８０℃で、５
〜２００時間加熱処理することを特徴とする磁気抵抗素
子の製造方法。When manufacturing a magnetoresistive element using an In/Sb semiconductor thin film, the In/Sb semiconductor thin film is heated at 150 to 480°C for 5
A method for manufacturing a magnetoresistive element, comprising heat treatment for ~200 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63254867A JPH02102584A (en) | 1988-10-12 | 1988-10-12 | Manufacture of magnetoresistive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63254867A JPH02102584A (en) | 1988-10-12 | 1988-10-12 | Manufacture of magnetoresistive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02102584A true JPH02102584A (en) | 1990-04-16 |
Family
ID=17270943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63254867A Pending JPH02102584A (en) | 1988-10-12 | 1988-10-12 | Manufacture of magnetoresistive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02102584A (en) |
-
1988
- 1988-10-12 JP JP63254867A patent/JPH02102584A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02263792A (en) | Heat treatment of silicon | |
| US6339016B1 (en) | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone | |
| JP2001247958A (en) | Method for manufacturing bolometer material, and bolometer element | |
| JPH02102584A (en) | Manufacture of magnetoresistive element | |
| EP3366816B1 (en) | Method for producing lithium niobate single crystal substrate | |
| JP3657036B2 (en) | Silicon carbide thin film and method for manufacturing silicon carbide thin film laminated substrate | |
| JPS6046539B2 (en) | Method for manufacturing silicon crystal film | |
| JPH0320007A (en) | Manufacture of magnetic thin film | |
| JPH05102167A (en) | Heat treatment of silicon | |
| JP4105688B2 (en) | Silicon single crystal material and manufacturing method thereof | |
| JPS6175513A (en) | Manufacture of silicon crystal film | |
| EP3312315A1 (en) | Lithium niobate single crystal substrate and method for producing same | |
| EP3312313A1 (en) | Lithium niobate single crystal substrate and method for producing same | |
| JP2588632B2 (en) | Oxygen precipitation method for silicon single crystal | |
| JPH0776747A (en) | Shape memory alloy and its production | |
| EP3312312A1 (en) | Lithium niobate single crystal substrate and method for producing same | |
| JPS5829254B2 (en) | Indium-antimony | |
| Sharma et al. | The preparation of InSb films | |
| JP2578917B2 (en) | Method for producing Cd-based II-VI compound semiconductor thin film | |
| JPS59114882A (en) | Indium-antimony series composite crystal semiconductor and manufacture thereof | |
| JPH03199198A (en) | Lanthanum gallate single crystal and production thereof | |
| JPH10291900A (en) | Production of semiinsulative inp single crystal and semiinsulative inp single crystal substrate | |
| JP2000306915A (en) | Manufacture of silicon wafer | |
| JPS6276514A (en) | Manufacture of semiconductor device | |
| JPH0384816A (en) | Treatment of transparent conductive film |