JPH0193178A - Temperature difference detector - Google Patents
Temperature difference detectorInfo
- Publication number
- JPH0193178A JPH0193178A JP62251345A JP25134587A JPH0193178A JP H0193178 A JPH0193178 A JP H0193178A JP 62251345 A JP62251345 A JP 62251345A JP 25134587 A JP25134587 A JP 25134587A JP H0193178 A JPH0193178 A JP H0193178A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- series
- substrate
- semiconductor
- thermoelectric elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000000919 ceramic Substances 0.000 claims abstract description 35
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- -1 MnTLO= Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910017163 MnFe2O4 Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910005798 NiMnO3 Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- YDZQQRWRVYGNER-UHFFFAOYSA-N iron;titanium;trihydrate Chemical compound O.O.O.[Ti].[Fe] YDZQQRWRVYGNER-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、ゼーベック効果を利用した温度差検知素子
に関し、特に熱電素子の配列構造が改良されたものに関
する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a temperature difference sensing element that utilizes the Seebeck effect, and particularly to one in which the arrangement structure of thermoelectric elements is improved.
［従来の技術］
特開昭５４−１１４０９０号公報には、還元性酸化チタ
ンよりなる半導体熱電素子を利用した熱線検知器が開示
されている。この熱線検知器は、第２図に示すように、
板状の還元性酸化チタン半導体基板１の一方主面にオー
ミックな金属膜２ａ。[Prior Art] Japanese Unexamined Patent Publication No. 114090/1983 discloses a heat ray detector using a semiconductor thermoelectric element made of reducible titanium oxide. This heat ray detector, as shown in Figure 2,
An ohmic metal film 2a is formed on one main surface of a plate-shaped reducible titanium oxide semiconductor substrate 1.
２ｂを形成し、オーミックな金属膜２ａ、２ｂと半導体
基板１との接合点の一方を温接点３、他方を冷接点４と
しだ熱電素子を複数枚用いて構成されている。すなわち
、第２図では平面的に３枚の熱電素子６ａ〜６Ｃが図示
されているが、これらの熱電素子６ａ、６ｂ、 ６ｃを
リード線７．８を用いて直列に接続して一体型の熱線検
知器とする構造が開示されている。2b is formed, one of the junctions between the ohmic metal films 2a and 2b and the semiconductor substrate 1 is used as a hot junction 3, and the other as a cold junction 4, and a plurality of thermoelectric elements are used. That is, although three thermoelectric elements 6a to 6C are shown in a plane in FIG. 2, these thermoelectric elements 6a, 6b, and 6c are connected in series using lead wires 7.8 to form an integrated structure. A structure for a heat ray detector is disclosed.
ここでは、複数枚の熱電素子６ａ 、６ ｂ ｒ ６
Ｃを直列に接続することにより、出力電圧を高めること
が可能とされている。Here, a plurality of thermoelectric elements 6a, 6br6
By connecting C in series, it is possible to increase the output voltage.
［発明が解決しようとする問題点］
しかしながら、第２図に示した熱電素子６８〜６ｂを別
個に用意しなければならず、また、複数枚の熱電素子を
直列に接続するためには、第２図に示したように交互に
逆向きに配置し、リード線７．８を用いて接続しなけれ
ばならないため、製造工程も複雑であった。[Problems to be Solved by the Invention] However, the thermoelectric elements 68 to 6b shown in FIG. 2 must be prepared separately, and in order to connect a plurality of thermoelectric elements in series, The manufacturing process was also complicated because the components had to be arranged in opposite directions alternately and connected using lead wires 7 and 8, as shown in FIG.
よって、この発明の目的は、より簡単な工程で得ること
ができ、かつ全体の構成を簡易化し得る構造を備えた温
度差検知素子を提供することにあ ゛る。Therefore, an object of the present invention is to provide a temperature difference sensing element that can be obtained through a simpler process and has a structure that allows the overall configuration to be simplified.
［問題点を解決するための手段］
この発明の温度差検知素子は、１枚の半導体セラミック
スよりなる基板を基本的構成要素とする。[Means for Solving the Problems] The temperature difference sensing element of the present invention has a substrate made of a single semiconductor ceramic as a basic component.
すなわち、このＵ板の少なくとも一方の面に、温接点お
よび冷接点を構成するために対をなすように複数対の電
極が形成されている。そして、対をなす電極と、該対を
なす電極間の半導体セラミックス基板部分とにより複数
個の熱電素子が単一の基板上に構成されており、この複
数個の熱電素子は該基板上で直列に接続されている。That is, a plurality of pairs of electrodes are formed on at least one surface of the U plate to form a hot junction and a cold junction. A plurality of thermoelectric elements are constructed on a single substrate by the pair of electrodes and the semiconductor ceramic substrate portion between the pair of electrodes, and the plurality of thermoelectric elements are arranged in series on the substrate. It is connected to the.
［作用］
半導体セラミックスよりなる単一の基板を用いて複数の
熱電素子が構成されているので、複数の基板を用いるこ
となく多段直列型のサーモバイルを得ることができる。[Function] Since a plurality of thermoelectric elements are constructed using a single substrate made of semiconductor ceramics, a multi-stage series thermoelectric device can be obtained without using a plurality of substrates.
また、直列に接続される複数個の熱電素子は基板上で接
続されるものであるため、各熱電素子を構成するための
電極と同時に容易に形成することができる。Moreover, since the plurality of thermoelectric elements connected in series are connected on the substrate, they can be easily formed at the same time as the electrodes for configuring each thermoelectric element.
［実施例の説明］
第１図および第３図は、この発明の一実施例の平面図お
よび正面図である。この実施例の温度差検知素子１１は
、半導体セラミックスよりなる基板１２を用いて構成さ
れている。基板１２を構成する半導体セラミックスとし
ては、ｎ型セラミック半導体であれば、ＢａＴｉ０．や
５ｒＺｒＯ。[Description of Embodiment] FIGS. 1 and 3 are a plan view and a front view of an embodiment of the present invention. The temperature difference sensing element 11 of this embodiment is constructed using a substrate 12 made of semiconductor ceramics. As the semiconductor ceramic constituting the substrate 12, if it is an n-type ceramic semiconductor, BaTi0. and 5rZrO.
のようなペロブスカイト型半導体、ＭｎＴＬＯ＝のよう
なイルメナイト型半導体、Ｆｅ、Ｏ，やＭｎＦｅ２Ｏ４
のようなスピネル型半導体、ＰｂｘＮｂ２０６のような
タングステンブロンズ型半導体、ソノ他ＺｒＯ，ＴｉＯ
２，Ｖ２０．等のセラミック半導体が挙げられる。また
、ｐ型セラミック半導体としては、Ｃｕ２０．Ｎｉｐ、
Ｃ，）Ｏ。perovskite type semiconductors such as MnTLO=, ilmenite type semiconductors such as MnTLO=, Fe, O, and MnFe2O4
Spinel type semiconductors such as PbxNb206, tungsten bronze type semiconductors such as Sono, ZrO, TiO
2, V20. Ceramic semiconductors such as Moreover, as a p-type ceramic semiconductor, Cu20. Nip,
C,)O.
Ｆｅｄ、ＭｎＯ，ＬａＭｎ０．、ＮｉＭｎＯ３゜ＬａＦ
ｅ０．等が挙げられる。このうち、ｎ型セラミック半導
体の場合は還元雰囲気中で処理された過剰半導体として
、また、ｐ型セミツク半導体の場合は酸化雰囲気中で処
理された不足半導体として使用してもよい。さらに、ｎ
型セラミック半導体の場合はＬａ、Ｃｅ、Ｐｒ、Ｎｄ等
の希土類元素やＴｉＯ２，ＺｒＯ，ＣｄＯ等の酸化物を
添加して、また、ｐ型の場合はＳｒＯ，Ｃａｂ、Ｌｉ２
Ｏ等の酸化物を添加して原子価制御半導体を形成し使用
してもよい。Fed, MnO, LaMn0. , NiMnO3゜LaF
e0. etc. Among these, an n-type ceramic semiconductor may be used as an excess semiconductor treated in a reducing atmosphere, and a p-type ceramic semiconductor may be used as an insufficient semiconductor treated in an oxidizing atmosphere. Furthermore, n
For type ceramic semiconductors, rare earth elements such as La, Ce, Pr, and Nd and oxides such as TiO2, ZrO, and CdO are added, and for p-type ceramic semiconductors, SrO, Cab, and Li2 are added.
A valence control semiconductor may be formed and used by adding an oxide such as O.
基板１２の一方主面には、複数の電極１３ａ〜１６ａ、
１３ｂ〜１６ｂが形成されている。このうち、電極１３
ａ〜１６ａは基板１２の一方主面上において一方の長手
方向に延びる端縁に沿って分散して形成されている。他
方、電極１３ｂ〜１６ｂは、基板１２の他方端縁側にお
いて、電極１３ａ〜１６ａと対向するように分散形成さ
れている。言換えれば、基板１２の一方主面において４
対の電極１３ａ、１３ｂ、−１６ａ、１６ｂが、所定距
離を隔てて形成されている。On one main surface of the substrate 12, a plurality of electrodes 13a to 16a,
13b to 16b are formed. Of these, electrode 13
a to 16a are formed on one main surface of the substrate 12 in a distributed manner along one edge extending in one longitudinal direction. On the other hand, the electrodes 13b to 16b are formed in a distributed manner on the other edge side of the substrate 12 so as to face the electrodes 13a to 16a. In other words, on one main surface of the substrate 12, 4
Pairs of electrodes 13a, 13b, -16a, 16b are formed at a predetermined distance apart.
この実施例では、上述した対をなす電極、たとえば電極
１３ａ、１３ｂと、該対をなす電極１３ａ、１３ｂ間の
半導体セラミックス基板１２部分とにより、１の熱電素
子が構成されている。さらに、隣り合う熱電素子は、相
互に、接続用導電路１７ａ〜１７ｃにより電気的に接続
され、結果として４個の熱電素子が直列に接続されてい
る。In this embodiment, one thermoelectric element is constituted by the pair of electrodes described above, for example, electrodes 13a and 13b, and the portion of the semiconductor ceramic substrate 12 between the pair of electrodes 13a and 13b. Further, adjacent thermoelectric elements are electrically connected to each other by connecting conductive paths 17a to 17c, and as a result, four thermoelectric elements are connected in series.
上記した電極１３ａ〜１６ｂは、オーミックな接触を与
える金属材料、たとえばニッケル、アルミニウム、金、
インジウムなどの金属またはこれらの合金により形成す
ることができる。形成方法については、蒸着あるいはス
パッタ等の種々の薄膜形成方法を用いることができる。The electrodes 13a to 16b described above are made of a metal material that provides ohmic contact, such as nickel, aluminum, gold, or
It can be formed from a metal such as indium or an alloy thereof. As for the formation method, various thin film formation methods such as vapor deposition or sputtering can be used.
しかも、好ましくは、接続用導電路１７ａ〜１７ｃを電
極１３ａ〜１３ｂと同一材料で構成する場合には、電極
１３ａ〜１６ｂと同時に基板１２上に形成することがで
きる。もっとも、接続用導電路１７ａ〜１７Ｃについて
は、電極材料と異なる導電性材料で形成してもよく、ま
たセラミック半導体基板に対して非オーミツク接触とな
る導電性材料でもよい。Moreover, preferably, when the connecting conductive paths 17a to 17c are made of the same material as the electrodes 13a to 13b, they can be formed on the substrate 12 at the same time as the electrodes 13a to 16b. However, the connection conductive paths 17a to 17C may be formed of a conductive material different from the electrode material, or may be formed of a conductive material that makes non-ohmic contact with the ceramic semiconductor substrate.
第１図および第３図実施例では、単一の半導体セラミッ
クス基板１２を用いて４個の熱電素子が直列に接続され
た温度差検知素子が構成されている。したがって、厚み
の薄い基板１２を用いれば、全体の厚みを効果的に薄く
し得ることがわかる。In the embodiments shown in FIGS. 1 and 3, a single semiconductor ceramic substrate 12 is used to construct a temperature difference sensing element in which four thermoelectric elements are connected in series. Therefore, it can be seen that by using a thin substrate 12, the overall thickness can be effectively reduced.
また、複数枚の基板を積層するものでないため、積層作
業や接着作業を実施する必要もない。のみならず、電極
１３ａ〜１６ｂと同時に接続用導電路１７ａ〜１７ｃを
形成し得るので、煩雑な接続作業も必要でない。Furthermore, since a plurality of substrates are not laminated, there is no need to perform lamination work or adhesion work. Furthermore, since the connection conductive paths 17a to 17c can be formed simultaneously with the electrodes 13a to 16b, no complicated connection work is required.
なお、第１図および第３図に示した実施例では、矩形の
半導体セラミックス基板１２を用いたが、他の平面形状
を有する半導体セラミックス基板を用いることも可能で
ある。たとえば、円板型の半導体セラミックス基板を用
い、該半導体セラミックス基板の一方主面上に放射状の
複数個の熱電素子を構成し、相互に直列に接続してもよ
い。In the embodiments shown in FIGS. 1 and 3, a rectangular semiconductor ceramic substrate 12 is used, but it is also possible to use a semiconductor ceramic substrate having another planar shape. For example, a disk-shaped semiconductor ceramic substrate may be used, and a plurality of radial thermoelectric elements may be formed on one main surface of the semiconductor ceramic substrate and connected to each other in series.
また、各熱電素子を構成するための電極は、半導体セラ
ミックス基板の他方主面側にも形成されていてもよく、
その場合には半導体セラミックス基板の両面において、
それぞれ、複数個の熱電素子が構成される。両生面上で
熱電素子を構成した場合には、好ましくは、一方主面側
に形成された熱電素子と他方主面側に形成された熱電素
子とを直列に接続することにより、接続段数を倍増する
ことができるので、より大きな出力電圧を得ることがで
きる。Further, the electrodes for configuring each thermoelectric element may also be formed on the other main surface side of the semiconductor ceramic substrate,
In that case, on both sides of the semiconductor ceramic substrate,
Each thermoelectric element is configured with a plurality of thermoelectric elements. When thermoelectric elements are configured on bidirectional surfaces, it is preferable to double the number of connection stages by connecting in series the thermoelectric elements formed on one main surface and the thermoelectric elements formed on the other main surface. Therefore, a larger output voltage can be obtained.
次に、具体的な実験例につき説明する。Next, a specific experimental example will be explained.
比抵抗２９にΩ・ｃｍの半導体化されたＢａＴｉｏ、系
の非還元性材料を用いた半導体セラミックス板を用意し
、＃８００の研磨材を用いて研磨し、１０Ｘ２０Ｘ０．
５ｍｍの大きさの基板１２を得た。この基板１２を、純
水、イソプロピルアルコールを、この順番で用いて超音
波洗浄を行なった。次に、基板１２の一方主面に、電極
１３ａ〜１６ｂを形成した。電極の形成は、蒸着により
行ない、〜１０−’ＴｏｒｒにてＮｉを最初に付着させ
、その上にＡｇを付着させた。A semiconductor ceramic plate using a non-reducing material based on semiconductor BaTio with a resistivity of 29 Ω·cm was prepared, and polished using a #800 abrasive to form a 10×20×0.
A substrate 12 having a size of 5 mm was obtained. This substrate 12 was subjected to ultrasonic cleaning using pure water and isopropyl alcohol in this order. Next, electrodes 13a to 16b were formed on one main surface of the substrate 12. The electrodes were formed by vapor deposition, with Ni first deposited at ~10-' Torr, followed by Ag.
上記のようにして得られた温度差検知素子における各電
極対すなわち電極１３ａ−電極１３ｂ。Each electrode pair, that is, electrode 13a-electrode 13b in the temperature difference sensing element obtained as described above.
電極１４ａ−１４ｂ、電極１５ａ−１５ｂ、電極１６ａ
−１６ｂの出力と、電極１３ａ−１４ｂ。Electrodes 14a-14b, electrodes 15a-15b, electrodes 16a
-16b output and electrodes 13a-14b.
電極１３ａ−電極１５ｂ１電極１３ａ−電極１６ｂ間の
各出力を測定した。この結果を、第４図にグラフで示す
。第４図から明らかなように、電極１３ａ−電極１６ｂ
間の出力は、４段の熱電素子の出力の総和となっている
ことがわかる。Each output between electrode 13a and electrode 15b1 and electrode 13a and electrode 16b was measured. The results are shown graphically in FIG. As is clear from FIG. 4, electrode 13a-electrode 16b
It can be seen that the output between them is the sum of the outputs of the four stages of thermoelectric elements.
［発明の効果］
この発明では、単一の半導体セラミックス基板を用いて
、複数個の熱電素子が直列に接続された多段直列接続型
の温度差検知器を得ることができる。よって、従来のよ
うに複数枚の基板を電気的に接続するものでないため、
全体の構造を効果的に簡略化することができる。また、
位置合わせや接着作業を要せず、さらに各熱電素子間の
接続も基板上に導電路を形成するだけでよいため、従来
の多段直列セラミック半導体サーモパイルに比べて製造
工程を飛躍的に簡略化することが可能となる。[Effects of the Invention] According to the present invention, a multi-stage series-connected temperature difference detector in which a plurality of thermoelectric elements are connected in series can be obtained using a single semiconductor ceramic substrate. Therefore, since it does not connect multiple boards electrically like in the past,
The overall structure can be effectively simplified. Also,
There is no need for positioning or bonding work, and the connection between each thermoelectric element only requires forming a conductive path on the substrate, which dramatically simplifies the manufacturing process compared to conventional multi-stage series ceramic semiconductor thermopiles. becomes possible.
なお、この発明によれば、たとえば赤外線検知器に適用
した場合には、小形でかつ出力電圧の大きなサーモパイ
ル型赤外１Ｇ！検知器を実現することができる。According to this invention, when applied to an infrared detector, for example, the thermopile type infrared 1G! which is small and has a large output voltage! A detector can be realized.
第１図は、この発明の一実施例の平面図、第２図は従来
の熱線検知器の一例を説明するための略図的平面図、第
３図は第１図実施例の正面図、第４図は第１図実施例を
用いた実験結果を説明するための図である。
図において、１１は温度差検知素子、１２は半導体セラ
ミックスよりなる基板、１３ａ〜１６ｂは電極、１７ａ
〜１７ｃは熱電素子層を電気的に接続するための接続用
導電路を示す。FIG. 1 is a plan view of an embodiment of the present invention, FIG. 2 is a schematic plan view for explaining an example of a conventional heat ray detector, and FIG. 3 is a front view of the embodiment of FIG. FIG. 4 is a diagram for explaining the experimental results using the embodiment shown in FIG. In the figure, 11 is a temperature difference detection element, 12 is a substrate made of semiconductor ceramics, 13a to 16b are electrodes, and 17a
17c indicates a connection conductive path for electrically connecting the thermoelectric element layers.
Claims (3)
少なくとも一方の面に、温接点および冷接点を構成する
ために対をなすように形成された複数対の電極とを備え
、 前記対をなす電極と該対をなす電極間の半導体セラミッ
クス基板部分とにより複数個の熱電素子が構成されてお
り、 前記複数個の熱電素子は基板上で直列に接続されている
、温度差検知素子。(1) A substrate made of semiconductor ceramics, and a plurality of pairs of electrodes formed on at least one surface of the substrate to form a hot junction and a cold junction, the paired electrodes A plurality of thermoelectric elements are constituted by a semiconductor ceramic substrate portion between the pair of electrodes, and the plurality of thermoelectric elements are connected in series on the substrate.
Ｔｉ、Ｚｒ、Ｃａ、Ｍｎ、Ｍｏ、Ｍｇ、Ｆｅ、Ｓｎ、Ｖ
、Ａｌ、Ｐｂ、Ｎｉ、Ｃｏ、Ｃｒのうちの少なくとも一
つを主成分とした酸化物より成るｎ型セラミック半導体
、または、Ｃｕ、Ｎｉ、Ｃｏ、Ｆｅ、Ｍｎ、Ｃｒ、Ｂｉ
、Ｙ、Ｍｏ、Ｔｌ、Ａｇ、Ｌａのうちの少なくとも一つ
を主成分とした酸化物より成るｐ型セラミック半導体で
ある、特許請求の範囲第１項記載の温度差検知素子。(2) The semiconductor ceramics include Cu, Ba, Sr,
Ti, Zr, Ca, Mn, Mo, Mg, Fe, Sn, V
, an n-type ceramic semiconductor made of an oxide containing at least one of Al, Pb, Ni, Co, and Cr as a main component, or Cu, Ni, Co, Fe, Mn, Cr, Bi
2. The temperature difference sensing element according to claim 1, which is a p-type ceramic semiconductor made of an oxide containing at least one of the following as a main component:
前記複数対の熱電素子が構成されており、双方の面に構
成された複数個の熱電素子は、直列に接続されている、
特許請求の範囲第１項または第２項記載の温度差検知素
子。(3) On both sides of the substrate made of semiconductor ceramics,
The plurality of pairs of thermoelectric elements are configured, and the plurality of thermoelectric elements configured on both surfaces are connected in series.
A temperature difference sensing element according to claim 1 or 2.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62251345A JPH0193178A (en) | 1987-10-05 | 1987-10-05 | Temperature difference detector |
| US07/253,719 US4938244A (en) | 1987-10-05 | 1988-10-05 | Temperature difference detecting element using semiconductive ceramic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62251345A JPH0193178A (en) | 1987-10-05 | 1987-10-05 | Temperature difference detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0193178A true JPH0193178A (en) | 1989-04-12 |
Family
ID=17221441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62251345A Pending JPH0193178A (en) | 1987-10-05 | 1987-10-05 | Temperature difference detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0193178A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013211540A (en) * | 2012-02-28 | 2013-10-10 | Univ Of Yamanashi | Thermo-electric material and process of manufacturing the same |
| US10260213B2 (en) | 2014-09-30 | 2019-04-16 | Kubota Corporation | Working machine |
-
1987
- 1987-10-05 JP JP62251345A patent/JPH0193178A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013211540A (en) * | 2012-02-28 | 2013-10-10 | Univ Of Yamanashi | Thermo-electric material and process of manufacturing the same |
| US10260213B2 (en) | 2014-09-30 | 2019-04-16 | Kubota Corporation | Working machine |
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