JPH0191620A - H-bridge protective circuit - Google Patents
H-bridge protective circuitInfo
- Publication number
- JPH0191620A JPH0191620A JP62247871A JP24787187A JPH0191620A JP H0191620 A JPH0191620 A JP H0191620A JP 62247871 A JP62247871 A JP 62247871A JP 24787187 A JP24787187 A JP 24787187A JP H0191620 A JPH0191620 A JP H0191620A
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- circuit
- time
- semiconductors
- reverse rotation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Landscapes
- Protection Of Static Devices (AREA)
- Control Of Direct Current Motors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＨブリッジ保護回路に係り、特に過電圧、過電
流を保護するに好適な保護回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an H-bridge protection circuit, and particularly to a protection circuit suitable for protecting against overvoltage and overcurrent.
従来装置は、スナバ−回路を半導体と並列に挿入し、過
電圧保護を行うのが一般的であった。Conventional devices generally provide overvoltage protection by inserting a snubber circuit in parallel with the semiconductor.
自動車に適用した例として、特開昭６０−３５６６３に
示すように、正逆転信号のインヒビットロジックにより
誤動作、破損しないよう信号段で注意が払われていた。As an example of application to automobiles, as shown in Japanese Patent Laid-Open No. 60-35663, care was taken at the signal stage to prevent malfunctions and damage due to inhibit logic of forward/reverse signals.
上記従来技術は、自動車特有の電源サージの保護につい
て配慮がされておらず、サージ到来時にパワートランジ
スタが破損する問題があった。The above-mentioned conventional technology does not take into account protection against power surges peculiar to automobiles, and there is a problem in that the power transistor is damaged when a surge occurs.
自動車においては、バッテリーをはずした時のロードダ
ンプサージ、Ｉｇサージ等により通常、半導体がオンし
、半導体がサージを吸収するようにしていたが、この考
え方は、正逆転用Ｆ■ブリッド回路では、ショート故障
を起こすことがわかった。In automobiles, semiconductors are normally turned on due to load dump surges, Ig surges, etc. when the battery is removed, and the semiconductors absorb the surges. It was found that short-circuit failures occur.
本発明の目的は、上記サージによりＨブリッジ回路の破
損を防止することにある。An object of the present invention is to prevent damage to the H-bridge circuit due to the above-mentioned surge.
又他の目的は、過電流時にもＨブリッジ回路の破損を防
止することにある。Another purpose is to prevent damage to the H-bridge circuit even in the event of overcurrent.
上記目的は、電源のサージ電圧をツェナーダイオードと
トランジスタをパワートランジスタの前段に構成した回
路で高速動作させ、パワートランジスタをオフさせるこ
とにより達成される。The above object is achieved by controlling the surge voltage of the power supply by using a circuit including a Zener diode and a transistor in the front stage of the power transistor to operate at high speed, thereby turning off the power transistor.
又、他の目的は、過電流保護を高速に行うため、過電流
検出手段を設け、その出力により上記前段のトランジス
タを高速作動させ、パワートランジスタをオフすること
により、達成される。Another object is achieved by providing overcurrent detection means to perform overcurrent protection at high speed, and using its output to operate the preceding transistor at high speed and turning off the power transistor.
過電圧時オンするトランジスタは、シングルトランジス
タで構成しているため、動作スピードが速く、瞬時に正
転及び逆転用半導体をオフすることができ、素子の安全
動作領域で保護ができるので破損しない。Since the transistor that turns on at the time of overvoltage is composed of a single transistor, the operating speed is fast, and the forward and reverse rotation semiconductors can be turned off instantaneously, and the element can be protected in the safe operating area, so it will not be damaged.
〔実施例〕 以下、本発明の一実施例を第１図により説明する。〔Example〕 An embodiment of the present invention will be described below with reference to FIG.
指令発生器１５の指令に応じて、マグネットモータ１２
をトランジスタ４〜７で構成されるＨブリッジ回路によ
り、正転及び逆転を行う制御システムを構成している。In response to the command from the command generator 15, the magnet motor 12
An H-bridge circuit composed of transistors 4 to 7 constitutes a control system that performs forward and reverse rotation.
センサ１３により位置を検出し、制御回路により指令と
比較を行い、位置制御を行う。正転の時は、ａ、ａ’に
信号が入り、逆転の時はす、ｂ’ に信号が加えられる
。トランジスタ４５，４６．４８．４９は反転増幅用で
ある。抵抗２３〜２７．３９〜４２．４４はトランジス
タ駆動用抵抗である。The sensor 13 detects the position, and the control circuit compares it with a command to perform position control. During forward rotation, a signal is applied to a and a', and when reverse rotation, a signal is applied to a and b'. Transistors 45, 46, 48, and 49 are for inverting amplification. Resistors 23-27.39-42.44 are transistor driving resistors.
ダイオード１６，１７．１８及び４３，４４゜５０はイ
ンヒビット回路を構成し、コンデンサ１９〜２２はトラ
ンジスタ４．６のターンオフを速くし、トランジスタ５
，７のターンオンを遅くし、同時ショートを防止するよ
うにしている。Diodes 16, 17, 18 and 43, 44° 50 constitute an inhibit circuit, capacitors 19-22 speed up the turn-off of transistor 4.6, and transistor 5.
, 7 are slowed down to prevent simultaneous short circuits.
過電圧保護回路は、抵抗２９．ツェナーダイオード５１
．トランジスタ５３及び、抵抗３５．ツェナーダイオー
ド５２．トランジスタ５４により構成しサージ印加時、
トランジスタ５及び７のベースをカットオフしている。The overvoltage protection circuit includes resistor 29. zener diode 51
．． Transistor 53 and resistor 35. Zener diode 52. It is composed of a transistor 54, and when a surge is applied,
The bases of transistors 5 and 7 are cut off.
又、抵抗３２は電流検出用シャントで過電流時にトラン
ジスタ５３．５４をオンさせ、トランジスタ５，７をオ
フし、保護している。Further, the resistor 32 is a current detection shunt, which turns on the transistors 53 and 54 and turns off the transistors 5 and 7 at the time of overcurrent, thereby protecting them.
本実施例によれば、サージや過電流により確実に素子の
保護を行うことができ、又小形化が可能という効果があ
る。According to this embodiment, the elements can be reliably protected against surges and overcurrents, and the device can be miniaturized.
第２図は、第１図の動作を示した図で、ａ、ａ’に信号
が入るとモータはｙの■の方向に回り、ｂ、ｂ’に信号
が入るとモータはｙのＯ方向に回る。バッテリー電圧ｖ
８にサージが到来したときには、ＴＲ５３，５４がオン
し、ＴＲ７，’５をオフし、トランジスタのＡ、Ｓ、Ｏ
オーバーを防止し、破損しないようにしている。Figure 2 is a diagram showing the operation of Figure 1. When signals are input to a and a', the motor rotates in the y direction, and when signals are input to b and b', the motor rotates in the y direction. Turn around. battery voltage v
When a surge arrives at 8, TR53 and 54 are turned on, TR7 and '5 are turned off, and transistors A, S, and O are turned on.
This prevents overflow and damage.
なお、ａ、ｂはチョッパを行っても可能である。Note that a and b can also be achieved by chopping.
本発明によれば、ツェナーダイオードと抵抗を過電流検
出回路に加えることにより実現できるので、小形化でき
る効果がある。According to the present invention, the overcurrent detection circuit can be realized by adding a Zener diode and a resistor to the overcurrent detection circuit, and therefore has the advantage of being able to be miniaturized.
又、Ｈブリッジ用半導体を異常時オフさせるので、誤信
号によるショート故障が発生せず、信頼性を向上できる
。Furthermore, since the H-bridge semiconductor is turned off in the event of an abnormality, short-circuit failures due to erroneous signals do not occur, and reliability can be improved.
第１図は本発明の一実施例を示す図、第２図は第１図の
動作波形図である。
１・・・バッテリー、４，５，６，７・・・トランジス
タ、１２・・・マグネットモータ、１３・・・位置検出
器、１４・・・制御回路、１５・・・位置指令発生器。FIG. 1 is a diagram showing one embodiment of the present invention, and FIG. 2 is an operation waveform diagram of FIG. 1. DESCRIPTION OF SYMBOLS 1... Battery, 4, 5, 6, 7... Transistor, 12... Magnet motor, 13... Position detector, 14... Control circuit, 15... Position command generator.
Claims (1)
半導体４組にてＨブリッジ回路を構成し、前記電動機の
正転、逆転を前記半導体の導通、非導通により制御する
制御回路を有し、前記直流電源に発生する過電圧又はサ
ージ電圧を検出すると共に、前記正転及び逆転用半導体
を同時にオフさせる停止回路を有したことを特徴とした
Ｈブリッジ保護回路。２、特許請求の範囲第１項におい
て、前記半導体の過電流を検出する過電流検出手段を有
し、前記停止回路は、前記過電流検出手段の出力によつ
ても作動し、前記正転及び逆転用半導体を同時にオフさ
せることを特徴とするＨブリッジ保護回路。1. In a forward/reverse switching circuit for a DC motor, an H-bridge circuit is constituted by four sets of semiconductors from a DC power source, and a control circuit is configured to control forward rotation and reverse rotation of the motor by conducting and non-conducting the semiconductors, An H-bridge protection circuit comprising a stop circuit that detects overvoltage or surge voltage generated in the DC power supply and simultaneously turns off the forward rotation and reverse rotation semiconductors. 2. Claim 1, further comprising overcurrent detection means for detecting an overcurrent in the semiconductor, wherein the stop circuit is also activated by the output of the overcurrent detection means, and the stop circuit is operable by the output of the overcurrent detection means, and An H-bridge protection circuit characterized by turning off the reversing semiconductors at the same time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62247871A JPH0191620A (en) | 1987-10-02 | 1987-10-02 | H-bridge protective circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62247871A JPH0191620A (en) | 1987-10-02 | 1987-10-02 | H-bridge protective circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0191620A true JPH0191620A (en) | 1989-04-11 |
Family
ID=17169861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62247871A Pending JPH0191620A (en) | 1987-10-02 | 1987-10-02 | H-bridge protective circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0191620A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03124218A (en) * | 1989-10-03 | 1991-05-27 | Mitsubishi Electric Corp | Semiconductor device |
| DE4405482A1 (en) * | 1993-02-21 | 1994-08-25 | Nissan Motor | Semiconductor component |
| US6388855B1 (en) | 1999-04-07 | 2002-05-14 | Nec Corporation | Transistor protecting circuit with enhancing circuit for H bridge circuit |
| KR20030082885A (en) * | 2002-04-16 | 2003-10-23 | 미쓰비시덴키 가부시키가이샤 | Power semiconductor device |
| WO2007006273A1 (en) * | 2005-07-14 | 2007-01-18 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Circuit arrangement and method for operating at least one electric lamp |
| WO2023090187A1 (en) * | 2021-11-19 | 2023-05-25 | ヌヴォトンテクノロジージャパン株式会社 | Motor drive device |
-
1987
- 1987-10-02 JP JP62247871A patent/JPH0191620A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03124218A (en) * | 1989-10-03 | 1991-05-27 | Mitsubishi Electric Corp | Semiconductor device |
| DE4405482A1 (en) * | 1993-02-21 | 1994-08-25 | Nissan Motor | Semiconductor component |
| US5675169A (en) * | 1993-02-21 | 1997-10-07 | Nissan Motor Co., Ltd. | Motor driving circuit with surge detection/protection and its structure in a semiconductor device |
| DE4405482C2 (en) * | 1993-02-21 | 1998-10-01 | Nissan Motor | Semiconductor device |
| US6388855B1 (en) | 1999-04-07 | 2002-05-14 | Nec Corporation | Transistor protecting circuit with enhancing circuit for H bridge circuit |
| KR20030082885A (en) * | 2002-04-16 | 2003-10-23 | 미쓰비시덴키 가부시키가이샤 | Power semiconductor device |
| WO2007006273A1 (en) * | 2005-07-14 | 2007-01-18 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Circuit arrangement and method for operating at least one electric lamp |
| US7888879B2 (en) | 2005-07-14 | 2011-02-15 | Osram Gesellschaft Mit Beschaenkter Haftung | Circuit arrangement and method for operating at least one electric lamp |
| AU2006269164B2 (en) * | 2005-07-14 | 2011-04-21 | Osram Ag | Circuit arrangement and method for operating at least one electric lamp |
| WO2023090187A1 (en) * | 2021-11-19 | 2023-05-25 | ヌヴォトンテクノロジージャパン株式会社 | Motor drive device |
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