JPH0173848U - - Google Patents
Info
- Publication number
- JPH0173848U JPH0173848U JP16825887U JP16825887U JPH0173848U JP H0173848 U JPH0173848 U JP H0173848U JP 16825887 U JP16825887 U JP 16825887U JP 16825887 U JP16825887 U JP 16825887U JP H0173848 U JPH0173848 U JP H0173848U
- Authority
- JP
- Japan
- Prior art keywords
- light shielding
- resist pattern
- spread
- projected onto
- coated surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Weting (AREA)
Description
第１図ａ〜ｄは本考案の一実施例におけるレジ
ストパターン形成の工程を示し、ａ，ｂは断面図
、ｃ，ｄは平面図、第２図ａ〜ｃはホトエツチン
グ法のための一般的なレジストパターン形成工程
を示す断面図、第３図はレジスト塗布面に凹凸の
ある場合の断面図、第４図、第５図は凹凸のある
レジスト塗布面上へのホトマスクを用いての露光
、現像の際の問題を説明する平面図である。
１……半導体基板、２……ホトレジスト、３…
…ホトマスク、４……遮光部。
Figures 1a to d show the process of resist pattern formation in one embodiment of the present invention, a and b are cross-sectional views, c and d are plan views, and Figures 2 a to c are general steps for photoetching. FIG. 3 is a cross-sectional view showing the process of forming a resist pattern; FIG. 3 is a cross-sectional view when the resist coating surface has unevenness; FIGS. 4 and 5 show exposure using a photomask on the uneven resist coating surface; FIG. 3 is a plan view illustrating problems during development. 1... Semiconductor substrate, 2... Photoresist, 3...
...Photomask, 4... Light shielding part.
Claims (1)
トパターンを形成するものにおいて、レジスト塗
布面の凸部領域上に投影される遮光部の広がりが
凹部領域上に投影される遮光部の広がりに比して
同一レジストパターン寸法に対して大きいことを
特徴とするホトマスク。 When a resist pattern is formed by selectively exposing a photoresist coated surface, the spread of the light shielding area projected onto the convex areas of the resist coated surface is the same as the spread of the light shielding area projected onto the concave areas. A photomask characterized by being large compared to resist pattern dimensions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16825887U JPH0173848U (en) | 1987-11-02 | 1987-11-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16825887U JPH0173848U (en) | 1987-11-02 | 1987-11-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0173848U true JPH0173848U (en) | 1989-05-18 |
Family
ID=31457279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16825887U Pending JPH0173848U (en) | 1987-11-02 | 1987-11-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0173848U (en) |
-
1987
- 1987-11-02 JP JP16825887U patent/JPH0173848U/ja active Pending