JPH0163229U - - Google Patents
Info
- Publication number
- JPH0163229U JPH0163229U JP1987156770U JP15677087U JPH0163229U JP H0163229 U JPH0163229 U JP H0163229U JP 1987156770 U JP1987156770 U JP 1987156770U JP 15677087 U JP15677087 U JP 15677087U JP H0163229 U JPH0163229 U JP H0163229U
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- semiconductor switch
- switch element
- receiving element
- photo sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Electronic Switches (AREA)
Description
第１図は本考案の一実施例を示す回路図、第２
図は第１図の半導体リレーの実装状態を示す断面
図、第３図は従来の半導体リレーを示すブロツク
図である。
１……発光ダイオード、３，９……フオトダイ
オード、４，７……抵抗、５，８……ＭＯＳ Ｆ
ＥＴ。
Figure 1 is a circuit diagram showing one embodiment of the present invention, Figure 2 is a circuit diagram showing an embodiment of the present invention.
This figure is a cross-sectional view showing the mounting state of the semiconductor relay shown in FIG. 1, and FIG. 3 is a block diagram showing a conventional semiconductor relay. 1... Light emitting diode, 3, 9... Photo diode, 4, 7... Resistor, 5, 8... MOS F
E.T.
Claims (1)
した信号に基づいてリレー接点としての半導体ス
イツチ素子を駆動する半導体リレーにおいて、前
記半導体スイツチ素子の制御端子に接続されて受
光時に制御用電圧を生成する受光素子と、この受
光素子と前記フオトセンサ間に接続されて光電変
換された信号によつて前記受光素子に対し閉回路
を形成する第２の半導体スイツチ素子とを具備す
ることを特徴とする半導体リレー。 In a semiconductor relay that drives a semiconductor switch element as a relay contact based on a signal obtained by photoelectrically converting an operation input signal by a photo sensor, a light receiving element is connected to a control terminal of the semiconductor switch element and generates a control voltage when receiving light. and a second semiconductor switch element connected between the light receiving element and the photo sensor to form a closed circuit to the light receiving element based on a photoelectrically converted signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987156770U JPH0546353Y2 (en) | 1987-10-15 | 1987-10-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987156770U JPH0546353Y2 (en) | 1987-10-15 | 1987-10-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0163229U true JPH0163229U (en) | 1989-04-24 |
| JPH0546353Y2 JPH0546353Y2 (en) | 1993-12-03 |
Family
ID=31435608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987156770U Expired - Lifetime JPH0546353Y2 (en) | 1987-10-15 | 1987-10-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0546353Y2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62195918A (en) * | 1986-02-24 | 1987-08-29 | Matsushita Electric Works Ltd | Semiconductor relay circuit |
-
1987
- 1987-10-15 JP JP1987156770U patent/JPH0546353Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0546353Y2 (en) | 1993-12-03 |