JPH0161220B2 - - Google Patents
Info
- Publication number
- JPH0161220B2 JPH0161220B2 JP23413082A JP23413082A JPH0161220B2 JP H0161220 B2 JPH0161220 B2 JP H0161220B2 JP 23413082 A JP23413082 A JP 23413082A JP 23413082 A JP23413082 A JP 23413082A JP H0161220 B2 JPH0161220 B2 JP H0161220B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- potential
- diameter
- lens
- main lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000007423 decrease Effects 0.000 claims description 12
- 230000001133 acceleration Effects 0.000 claims description 2
- 230000004075 alteration Effects 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/488—Schematic arrangements of the electrodes for beam forming; Place and form of the elecrodes
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、高輝度時においても高い解像度が得
られるように構成した受像管装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a picture tube device configured to provide high resolution even at high brightness.
従来例の構成とその問題点
一般に、受像管の解像度は絵素となるビームス
ポツト（輝点）の大きさに依存し、ビームスポツ
ト径が小さいほど高い解像度が得られる。一方、
ビームスポツトはビーム電流の増大に伴つて径大
化するので、比較的大きいビーム電流が流れる高
輝度時にブルーミングを生じて解像度が低下す
る。Conventional Structure and Problems Therein Generally, the resolution of a picture tube depends on the size of a beam spot (bright spot) serving as a picture element, and the smaller the diameter of the beam spot, the higher the resolution can be obtained. on the other hand,
Since the diameter of the beam spot increases as the beam current increases, blooming occurs at high brightness times when a relatively large beam current flows, resulting in a decrease in resolution.
これを図面により説明すると、第１図にはバイ
ポテンシヤル形電子銃の電極構成が示されてお
り、第２図には同電子銃の軸上電位分布が示され
ている。陰極１から放射された熱電子は、陰極
１、制御電極としてのG1電極２および加速電極
としてのG2電極３からなる三極部で生成される
いわゆるカソードレンズ４によりクロスオーバ５
をつくり、G2電極３と集束電極たるG3電極６と
の間に生成されるプリフオーカスレンズ７で予備
集束作用を受ける。そしてG3電極６と最終加速
電極たるG4電極８との間に生成されるメインレ
ンズ９で最終的な集束作用を受け、螢光体スクリ
ーン面１０に射突してビームスポツト１１を生成
するのであり、ビームスポツト１１はクロスオー
バ５の投影像である。 To explain this with the drawings, FIG. 1 shows the electrode configuration of a bipotential electron gun, and FIG. 2 shows the axial potential distribution of the electron gun. Thermionic electrons emitted from the cathode 1 are passed through a crossover 5 by a so-called cathode lens 4 generated in a triode consisting of the cathode 1, the G1 electrode 2 as a control electrode, and the G2 electrode 3 as an accelerating electrode.
A prefocusing lens 7 is formed between the G2 electrode 3 and the G3 electrode 6, which is a focusing electrode, to perform a prefocusing action. The main lens 9 formed between the G3 electrode 6 and the G4 electrode 8, which is the final accelerating electrode, receives the final focusing action and impinges on the phosphor screen surface 10 to generate a beam spot 11. The beam spot 11 is a projected image of the crossover 5.
陰極１からG3電極６にいたる軸上電位分布は
ゆるやかに上昇し、これによりカソードレンズ４
およびプリフオーカスレンズ７が生成されるが、
両レンズ４，７は明確に区別し難いので、以下の
説明ではこの両レンズ領域をビーム形成部と呼称
する。G3電極６内における軸上電位分布はVfpcと
略一定であるが、G3電極６とG4電極８との間に
おける軸上電位は高電位Vaへと急激に上昇し、
ここにメインレンズ９が生成される。 The axial potential distribution from the cathode 1 to the G3 electrode 6 rises gradually, and this causes the cathode lens 4 to
and prefocus lens 7 is generated,
Since both lenses 4 and 7 are difficult to clearly distinguish, in the following description, these two lens regions will be referred to as a beam forming section. The axial potential distribution within the G 3 electrode 6 is approximately constant at V fpc , but the axial potential between the G 3 electrode 6 and the G 4 electrode 8 rapidly increases to a high potential V a .
The main lens 9 is generated here.
前記ビーム形成部での熱電子の挙動は非常に複
雑であるが、大ビーム電流時には第３図に数本の
線でもつて代表的に示す電子軌道１２〜１７を通
る。電子軌道１２〜１７がすべて一点で交差すれ
ば理想的な径小のクロスオーバおよびビームポツ
トが生成されるのであるが、実際には陰極１の中
央部から放射された熱電子の軌道１２，１３は陰
極１からもつとも遠い位置１８で交差し、陰極１
の周辺部から放射された熱電子の軌道１６，１７
は陰極１に近い位置１９で交差する。これは前記
ビーム形成部でのレンズに球面収差が伴つている
からで、実際上のクロスオーバの径は、理論的限
界値に比べて著しく大きい値となる。 The behavior of the thermoelectrons in the beam forming section is very complicated, but when the beam current is large, the electrons pass through electron trajectories 12 to 17, which are representatively shown by several lines in FIG. If the electron trajectories 12 to 17 all intersect at one point, an ideal small-diameter crossover and beam spot will be generated, but in reality, the trajectories 12 and 13 of the hot electrons emitted from the center of the cathode 1 are It intersects at the farthest position 18 from the cathode 1, and the cathode 1
Trajectories 16, 17 of thermionic electrons emitted from the periphery of
intersect at position 19 close to cathode 1. This is because the lens in the beam forming section is accompanied by spherical aberration, and the actual diameter of the crossover is significantly larger than the theoretical limit value.
そして、このクロスオーバがメインレンズ９に
よつて螢光体スクリーン面１０上に投影されるの
であるが、正確にはプリフオーカスレンズ７が存
在するために、第３図に示すように実際に投影さ
れるものはクロスオーバ（径ｄ）の虚像であり、
この虚像クロスオーバは第３図中に破線で示した
ように電子軌道１２〜１７を逆方向へ延長させた
ときの交点として求められる。 Then, this crossover is projected onto the phosphor screen surface 10 by the main lens 9, but precisely because of the presence of the prefocus lens 7, it is actually projected as shown in FIG. What is projected is a virtual image of crossover (diameter d),
This virtual image crossover is obtained as the intersection point when the electron trajectories 12 to 17 are extended in opposite directions, as shown by broken lines in FIG.
いま、虚像クロスオーバの直径をdpとすると、
螢光体スクリーン面１０に生じるビームスポツト
１１の径dsは次の関係式で表わすことができる。 Now, if the diameter of the virtual image crossover is d p , then
The diameter ds of the beam spot 11 produced on the phosphor screen surface 10 can be expressed by the following relational expression.
ds＝dp×Ｍ＋１／４CsD3 ……(1)
ここでＭはメインレンズの倍率、Csはメインレ
ンズの球面収差係数、Ｄはメインレンズでの電子
ビームの拡がり径を示し、Ｍは次式で表わされ
る。 d s = d p × M + 1/4 C s D 3 ...(1) Here, M is the magnification of the main lens, C s is the spherical aberration coefficient of the main lens, D is the spread diameter of the electron beam at the main lens, M is expressed by the following formula.
Ｍ＝2L・ａ／Ｄ√Vfpc／Va ……(2)
ただし、ａはビーム形成部から出る電子ビーム
の最大発散角、Ｌはメインレンズａの中心と螢光
体スクリーン面１０との間の距離、VfpcはG3電極
電位、VaはG4電極電位を示す。 M=2L・a/D√V fpc /V a ...(2) However, a is the maximum divergence angle of the electron beam emitted from the beam forming section, and L is the angle between the center of the main lens a and the phosphor screen surface 10. The distance between them, V fpc is the G 3 electrode potential, and V a is the G 4 electrode potential.
(2)式を(1)式に代入すると
ds＝ａ・dp／Ｄ（2L√Vfpc／Va）＋１／４CsD3…
…(3)
となる。 Substituting equation (2) into equation (1), d s = a・d p /D (2L√V fpc /V a ) + 1/4C s D 3 ...
…(3) becomes.
この式の（ ）内は受像管のサイズと動作条件
とによつて決まり、Csは使用するレンズの口径に
よつて決まる。 The value in parentheses in this equation is determined by the size of the picture tube and the operating conditions, and C s is determined by the aperture of the lens used.
電子ビームの拡がり径Ｄは、第１項ではD-1、
第２項ではD3のかたちで入つているから、dsが
最小となるようなＤの値が存在し、通常はその値
に選ばれる。そして、このような制約のもとでds
を小さくしようとすると、第１項のａ・dpを小さ
くしなければならないことになる。 The spread diameter D of the electron beam is D -1 in the first term,
In the second term, it is entered in the form of D 3 , so there is a value of D that minimizes d s , and that value is usually selected. Then, under these constraints, d s
If you try to make it smaller, you will have to make the first term a・d p smaller.
本発明者らの研究結果によると、G2電極とG3
電極との間の電位の上昇を急峻にするとａ・dpを
小さくすることができる。第４図はG2電極とG3
電極との間隔を小さくしたときにａ・dpが減少す
る様子を示したもので、ａとdpとが単独でどのよ
うに変化するかがわかる。G2電極とG3電極との
間隔を小さくするとdpは著しく減少し、ａは逆に
増大するが、dpの減少度合がより著しいので両者
の積ａ・dpは減少する。dpがこのように減少する
のは、電位の上昇が急峻になるとビーム形成部に
おけるレンズの球面収差が減少するためである。 According to the research results of the present inventors, G 2 electrode and G 3
By making the rise in potential between the electrodes steeper, a·d p can be reduced. Figure 4 shows G 2 electrode and G 3
This figure shows how a·d p decreases when the distance between the electrodes is reduced, and it can be seen how a and d p change independently. When the distance between the G 2 electrode and the G 3 electrode is reduced, d p decreases significantly and a increases, but since the degree of decrease in d p is more significant, the product a·d p of both decreases. The reason why d p decreases in this way is that the spherical aberration of the lens in the beam forming section decreases when the potential rises steeply.
このような効果がはつきりと現われるのは、電
位傾度で約105V／cmからであり、この値が大き
いほど大電流時におけるビームスポツトの径小化
に有利である。しかし小電流時ビームスポツト径
は逆に大きくなる。また、電位傾度が大きくなり
過ぎると、G2電極の表面から電界放出による電
子放射が起り、これが螢光体スクリーン面に射突
して不本意な発光を生じる。 Such an effect clearly appears at a potential gradient of about 10 5 V/cm, and the larger this value is, the more advantageous it is to reducing the diameter of the beam spot when a large current is applied. However, when the current is small, the beam spot diameter becomes larger. Furthermore, if the potential gradient becomes too large, electron emission occurs from the surface of the G 2 electrode due to field emission, which impinges on the phosphor screen surface and causes unwanted light emission.
このように実用可能な電位傾度には上限があ
り、その値は実験結果によると約５×105V／cm
である。G2電極とG3電極との電位差を8KVとす
ると、前記値の電位傾度を与えうるG2電極とG3
電極との間隔は0.8mmから0.16mmとなる。 In this way, there is an upper limit to the practical potential gradient, and according to experimental results, the value is approximately 5 × 10 5 V/cm.
It is. If the potential difference between the G 2 electrode and the G 3 electrode is 8KV, the G 2 electrode and the G 3 electrode can give a potential gradient of the above value.
The distance between the electrodes is 0.8 mm to 0.16 mm.
しかし、このような電位傾度を従来の受像管電
子銃のビーム形成部にそのまま適用しても、螢光
体スクリーン面上でのビームスポツト径を縮小さ
せ得ない。それは、G2−G3間電位傾度を高める
とビーム発散角ａが増大するためである。ビーム
発散角ａが増大すると、メインレンズ９での電子
ビーム径Ｄが増大し、(3)式右辺第２項のメインレ
ンズ収差による寄与分が増大する。そして同第２
項はＤの三乗に比例するので、電子ビーム径Ｄの
わずかな増大でも影響が大きく、(3)式第１項の
ａ・dpをせつかく減小させても、ビームスポツト
径dsはかえつて増大する結果となる。 However, even if such a potential gradient is directly applied to the beam forming section of a conventional picture tube electron gun, the beam spot diameter on the phosphor screen surface cannot be reduced. This is because increasing the potential gradient between G 2 and G 3 increases the beam divergence angle a. When the beam divergence angle a increases, the electron beam diameter D at the main lens 9 increases, and the contribution of the main lens aberration in the second term on the right side of equation (3) increases. And the second
Since the term is proportional to the cube of D, even a slight increase in the electron beam diameter D has a large effect, and even if a・d p in the first term of equation (3) is reduced, the beam spot diameter d On the contrary, the result is an increase.
電子ビーム径Ｄの増大は、G3電極の長さを小
さくすることによつて避けられるが、フオーカス
条件を満すためにG3電極を短かくした分だけメ
インレンズ集点距離を短かくすることが必要とな
り、そのためにはG3電極電位を下げなければな
らない。そうすると、G2−G3間電位傾度が下つ
てしまい、電極間隔をせつかく狭めたにもかかわ
らずａ・dpの低減効果は失われてしまう。 An increase in the electron beam diameter D can be avoided by reducing the length of the G3 electrode, but in order to satisfy the focus condition, the main lens focusing distance should be shortened by the length of the G3 electrode. This requires lowering the G 3 electrode potential. In this case, the potential gradient between G 2 and G 3 decreases, and the effect of reducing a·d p is lost even though the electrode spacing is diligently narrowed.
発明の目的
本発明は、前述のような従来の不都合を除去す
るためになされたもので、低輝度域から高輝度域
まで略一定径のビームスポツトが得られる受像管
装置を提供するものである。Purpose of the Invention The present invention was made to eliminate the above-mentioned conventional disadvantages, and provides a picture tube device that can obtain a beam spot with a substantially constant diameter from a low brightness region to a high brightness region. .
発明の構成
本発明の受像管装置は、制御電極としてのG1
電極側から最終加速電極としてのG6電極側へと
順次に配設されたG2電極、G3電極、G4電極およ
びG5電極を備え、G3電極は平板状となされ、G2
電極とG3電極との間隔をこの２電極間電位傾度
が105V／cm〜５×105V／cmとなるように設定さ
れる。そして、G4電極にはG3電極およびG5電極
に対するフオーカス電位よりも低い電位を与える
のであり、軸上電位分布はG3電極領域で極大値
をとつたあとG4電極領域にかけ漸減して極小値
をとり、G4電極からG6電極にいたる領域で連続
的に上昇して、G3電極ないしG6電極電位の関与
により実質的に単一の厚肉メインレンズを生成さ
せるのであり、これを以下図面に示した実施例と
ともに詳しく説明する。Structure of the Invention The picture tube device of the present invention has G 1 as a control electrode.
The G 2 electrode, the G 3 electrode, the G 4 electrode, and the G 5 electrode are arranged sequentially from the electrode side to the G 6 electrode side as the final accelerating electrode .
The distance between the electrode and the G 3 electrode is set so that the potential gradient between the two electrodes is 10 5 V/cm to 5×10 5 V/cm. Then, a potential lower than the focus potential for the G 3 and G 5 electrodes is applied to the G 4 electrode, and the axial potential distribution reaches a maximum value in the G 3 electrode region and then gradually decreases toward the G 4 electrode region. It takes a minimum value, rises continuously in the region from the G 4 electrode to the G 6 electrode, and substantially generates a single thick main lens due to the involvement of the G 3 electrode to the G 6 electrode potential. This will be explained in detail below along with embodiments shown in the drawings.
実施例の説明
第５図に示す電子銃は、制御電極としてのG1
電極２側から最終加速電極としてのG6電極２１
側へと順次に配設されたG2電極３、G3電極２２、
G4電極２３およびG5電極２４を備えている。G2
電極３は従来の電子銃における加速電極と同様の
構造を有しており、G2電極３に隣接する平板状
のG3電極２２は、G2電極３に対し105V／cm〜５
×105V／cmの電位傾度となるように近接配置さ
れている。DESCRIPTION OF EMBODIMENTS The electron gun shown in FIG.
G6 electrode 21 as the final acceleration electrode from the electrode 2 side
G 2 electrode 3, G 3 electrode 22 arranged sequentially toward the side;
A G 4 electrode 23 and a G 5 electrode 24 are provided. G 2
The electrode 3 has a structure similar to the accelerating electrode in a conventional electron gun, and the flat G 3 electrode 22 adjacent to the G 2 electrode 3 has a voltage of 10 5 V/cm to 5
They are placed close together so that the potential gradient is ×10 5 V/cm.
G4電極２３、G5電極２４およびG6電極２１は
いずれも円筒状のもので、G3電極２２とG5電極
２４とは管内で相互に接続されていて6KV〜
10KV程度のフオーカス電位（Vfpc）が与えられ
る。また、G4電極２３にはフオーカス電位
（Vfpc）よりも低い電位が与えられ、G6電極２１
には約30KVの高電位（Va）が与えられる。 The G 4 electrode 23, the G 5 electrode 24, and the G 6 electrode 21 are all cylindrical, and the G 3 electrode 22 and the G 5 electrode 24 are connected to each other inside the tube and have a voltage of 6KV~
A focus potential (V fpc ) of about 10 KV is applied. Further, a potential lower than the focus potential (V fpc ) is applied to the G 4 electrode 23, and a potential lower than the focus potential (V fpc ) is applied to the G 6 electrode 21.
A high potential (V a ) of approximately 30 KV is applied to the
このような構成によると、ビーム形成部におけ
る軸上電位分布は急峻に上昇し、大ビーム電流時
のａ・dpが著しく減少する一方、ビーム発散角ａ
が増大する。すなわち、第６図に示すように軸上
電位分布はG3電極２２の電子ビーム通過孔２５
内でフオーカス電位（Vfpc）まで上昇し、その後
G4電極２３にかけて漸減する。そして、G4電極
２３、G5電極２４およびG6電極２１の３電極に
またがる領域で連続的に上昇し、G6電極２１内
で高電位（Va）に達する。このため、G3電極２
２、G4電極２３、G5電極２４およびG6電極２１
の電位が関与して広い範囲にわたりレンズ電界が
生じるのであるが、G3電極は平板状であるので、
実質的に単一の厚肉のメインレンズ２６が生成さ
れる。 With such a configuration, the axial potential distribution in the beam forming section rises steeply, and a・dp decreases markedly at the time of large beam current, while the beam divergence angle a
increases. That is, as shown in FIG. 6, the axial potential distribution is
rises to the focus potential (V fpc ) within
It gradually decreases toward the G4 electrode 23. Then, it rises continuously in a region spanning the three electrodes of the G 4 electrode 23, the G 5 electrode 24, and the G 6 electrode 21, and reaches a high potential (V a ) within the G 6 electrode 21. For this reason, G 3 electrode 2
2. G 4 electrode 23, G 5 electrode 24 and G 6 electrode 21
A lens electric field is generated over a wide range due to the potential involved, but since the G3 electrode is flat,
A substantially single thick main lens 26 is produced.
G4電極２３内の軸上電位はフオーカス電位
（Vfpc）よりも低いから、従来の電子銃構成に比
して集点距離が短小となる。このことは、ビーム
形成部における電位上昇を急峻に保ちながら虚像
クロスオーバとメインレンズとの相互間距離を短
小化できることを意味し、ビーム発散角ａが増大
してもメインレンズ２６でのビーム径Ｄを適正値
に保つことが可能となる。そして、これを(3)式に
照らしてみると、ビーム径Ｄを増すことなくａ・
dpを減少させ得るのであるから、ビームスポツト
径dsを縮小化しうることが判かる。 Since the axial potential within the G 4 electrode 23 is lower than the focus potential (V fpc ), the focal point distance is shorter than in the conventional electron gun configuration. This means that the distance between the virtual image crossover and the main lens can be shortened while maintaining a steep potential rise in the beam forming section, and even if the beam divergence angle a increases, the beam diameter at the main lens 26 It becomes possible to maintain D at an appropriate value. If we compare this with equation (3), we can see that without increasing the beam diameter D, a.
Since d p can be reduced, it is understood that the beam spot diameter d s can be reduced.
また、メインレンズ２６のレンズ電界が広い範
囲にわたつてゆるやかに分布するため、メインレ
ンズの球面収差は少なく、これは(3)式の第２項の
収差係数Csが小さくなることを意味するから、こ
の効果によつてもビームスポツト径dsは小さくな
る。 Furthermore, since the lens electric field of the main lens 26 is distributed gently over a wide range, the spherical aberration of the main lens is small, which means that the aberration coefficient C s in the second term of equation (3) becomes small. Therefore, this effect also reduces the beam spot diameter ds .
発明の効果
以上のように本発明の受像管装置によると、ビ
ーム形成部におけるレンズ球面収差の減小、虚像
クロスオーバの径小化およびメインレンズ球面収
差の減少という効果があいまつて、大ビーム電流
時においても径小のビームスポツトが得られ、良
好な解像度特性を得ることができる。Effects of the Invention As described above, according to the picture tube device of the present invention, the effects of reducing lens spherical aberration in the beam forming section, reducing the diameter of the virtual image crossover, and reducing the main lens spherical aberration can be achieved, and a large beam current can be achieved. Even at times, a beam spot with a small diameter can be obtained, and good resolution characteristics can be obtained.
第１図は従来の受像管装置の電子銃電極構成を
示す図、第２図は同電子銃の軸上電位分布図、第
３図は同電子銃のビーム形成部における動作態様
説明図、第４図はG2電極とG3電極との相互間距
離に対するビーム発散角および虚像クロスオーバ
径の関係を示す特性図、第５図は本発明を実施し
た受像管装置の電子銃の電極構成を示す図、第６
図は同電子銃の軸上電位分布図である。
１……陰極、２……G1電極、３……G2電極、
２１……G6電極、２２……G3電極、２３……G4
電極、２４……G5電極。
FIG. 1 is a diagram showing the electron gun electrode configuration of a conventional picture tube device, FIG. 2 is an axial potential distribution diagram of the electron gun, and FIG. 3 is an explanatory diagram of the operation mode in the beam forming section of the electron gun. Figure 4 is a characteristic diagram showing the relationship between the beam divergence angle and the virtual image crossover diameter with respect to the mutual distance between the G 2 electrode and the G 3 electrode, and Figure 5 shows the electrode configuration of the electron gun of the picture tube device in which the present invention is implemented. Figure shown, No. 6
The figure is an axial potential distribution diagram of the electron gun. 1... cathode, 2... G 1 electrode, 3... G 2 electrode,
21...G 6 electrodes, 22...G 3 electrodes, 23...G 4
Electrode, 24...G 5 electrode.
Claims (1)
極としてのG6電極側へと順次に配設されたG2電
極、G3電極、G4電極およびG5電極を備え、G3電
極は平板状のもので、G2電極とG3電極との間隔
はこの２電極間電位傾度が105V／cm〜５×
105V／cmとなるように設定され、G4電極にはG3
電極およびG5電極に対するフオーカス電位より
も低い電位が与えられ、軸上電位分布はG3電極
領域で極大値をとつたあとG4電極領域にかけ漸
減して極小値をとり、G4電極からG6電極にいた
る領域で連続的に上昇してG3電極ないしG6電極
電位の関与により実質的に単一の厚肉メインレン
ズを生成することを特徴とする受像管装置。1 Equipped with a G2 electrode, a G3 electrode, a G4 electrode , and a G5 electrode arranged sequentially from the G1 electrode side as a control electrode to the G6 electrode side as a final acceleration electrode, and the G3 electrode is a flat plate. The distance between the G 2 electrode and the G 3 electrode is such that the potential gradient between the two electrodes is 10 5 V/cm ~ 5 ×
10 5 V/cm, and the G 4 electrode has a G 3
A potential lower than the focus potential is applied to the electrode and the G5 electrode, and the axial potential distribution reaches a maximum value in the G3 electrode area, then gradually decreases to a minimum value in the G4 electrode area, and from the G4 electrode to the G5 electrode. A picture tube device characterized in that the potential of the G3 electrode or the G6 electrode increases continuously in the region up to the 6th electrode to generate a substantially single thick main lens.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23413082A JPS59123140A (en) | 1982-12-29 | 1982-12-29 | Picture tube device |
| EP19830113068 EP0113113B1 (en) | 1982-12-29 | 1983-12-23 | Cathode ray tube |
| DE8383113068T DE3373746D1 (en) | 1982-12-29 | 1983-12-23 | Cathode ray tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23413082A JPS59123140A (en) | 1982-12-29 | 1982-12-29 | Picture tube device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59123140A JPS59123140A (en) | 1984-07-16 |
| JPH0161220B2 true JPH0161220B2 (en) | 1989-12-27 |
Family
ID=16966102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23413082A Granted JPS59123140A (en) | 1982-12-29 | 1982-12-29 | Picture tube device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59123140A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0799673B2 (en) * | 1983-07-22 | 1995-10-25 | 株式会社東芝 | Electron gun for cathode ray tube |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5489472A (en) * | 1977-12-27 | 1979-07-16 | Toshiba Corp | Electron gun for cathode-ray tube |
| JPS5472667A (en) * | 1977-11-22 | 1979-06-11 | Toshiba Corp | Electron gun for cathode ray tube |
-
1982
- 1982-12-29 JP JP23413082A patent/JPS59123140A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59123140A (en) | 1984-07-16 |
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