JPH0158047B2 - - Google Patents
Info
- Publication number
- JPH0158047B2 JPH0158047B2 JP26474185A JP26474185A JPH0158047B2 JP H0158047 B2 JPH0158047 B2 JP H0158047B2 JP 26474185 A JP26474185 A JP 26474185A JP 26474185 A JP26474185 A JP 26474185A JP H0158047 B2 JPH0158047 B2 JP H0158047B2
- Authority
- JP
- Japan
- Prior art keywords
- cutting
- cleaning water
- plate
- wafer
- water supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004140 cleaning Methods 0.000 claims description 34
- 238000005520 cutting process Methods 0.000 claims description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 32
- 239000000498 cooling water Substances 0.000 claims description 20
- 235000012431 wafers Nutrition 0.000 description 37
- 239000004065 semiconductor Substances 0.000 description 25
- 239000008188 pellet Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 6
- 238000005336 cracking Methods 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
Description
【発明の詳細な説明】
本発明は板状物のダイシング装置に関し、主と
して多数個の素子が配設された一枚の半導体ウエ
ハを個々の素子を含むペレツトに分離する際のダ
イシング装置を対象とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dicing apparatus for plate-shaped objects, and is mainly directed to a dicing apparatus for separating a single semiconductor wafer on which a large number of elements are arranged into pellets containing individual elements. do.
半導体装置の製造において、半導体ウエハの一
主面に拡散、蒸着等の各処理を経て多数の素子を
配列的に形成し、この半導体ウエハを各素子を含
む複数のペレツトごとに分離する作業がある。 In the manufacture of semiconductor devices, there is work in which a large number of elements are formed in an array on one main surface of a semiconductor wafer through various processes such as diffusion and vapor deposition, and the semiconductor wafer is separated into multiple pellets containing each element. .
半導体ウエハから個々のペレツトに分離する方
法は、例えば特公昭48−21421の公報に記載され
ているように、ダイヤモンドカツターにより各素
子間を方形に区切る縦横のスクライブ溝を形成
し、その後この溝に沿つてクラツキングを行なつ
て半導体ペレツトをウエハから分離している。 A method of separating semiconductor wafers into individual pellets is, for example, as described in Japanese Patent Publication No. 48-21421, in which vertical and horizontal scribe grooves are formed to divide each element into squares using a diamond cutter, and then these grooves are cut into individual pellets. The semiconductor pellet is separated from the wafer by cracking along the wafer.
しかしながら、上記分離方法においては、ダイ
ヤモンドカツターによるスクライブ溝が浅く、こ
の溝に沿つてクラツキングを行なつて各ペレツト
ごとに分離するとき、スクライブ溝以外の部分に
もひびを生じさせ、半導体ペレツトの割れや欠け
を生じさせた。また、分離されずに二つの半導体
ペレツトが結合し分離不確実となるという問題が
あつた。 However, in the above separation method, the scribe grooves made by the diamond cutter are shallow, and when cracking is performed along these grooves to separate each pellet, cracks are also generated in areas other than the scribe grooves, and the semiconductor pellets are separated. This caused cracks and chips. Further, there was a problem in that the two semiconductor pellets were not separated and were combined, resulting in uncertain separation.
このようなことから、半導体ウエハから個々の
半導体ペレツトを分離する方法にあつてはダイヤ
モンドカツターによるスクライブ方法から外周部
にダイヤモンドの砥粒からなる外周刃を有する回
転砥石（ブレード）を使用してウエハ表面を切削
することにより比較的深い切溝を形成するダイシ
ング方法に移行しつつある。 For this reason, the method for separating individual semiconductor pellets from a semiconductor wafer has changed from the scribing method using a diamond cutter to the use of a rotating grindstone (blade) having a peripheral cutting edge made of diamond abrasive grains on the outer periphery. A shift is being made to a dicing method in which relatively deep grooves are formed by cutting the wafer surface.
ところで、回転するブレードによるダイシング
方法では、切削局部に発生する熱を冷却し、同時
に、切削シリコーン屑等が切削局部につまること
を防止するために、この部分に冷却水（または潤
滑液）を絶えず供給しながら行なうが、その場合
冷却水と共にはじき出されたシリコン屑等の切屑
が半導体ウエハ上面に移動し、これが付着してウ
エハ表面を汚すという問題があり、実用化が困難
であつた。 By the way, in the dicing method using a rotating blade, cooling water (or lubricant) is constantly applied to this area in order to cool down the heat generated in the cutting area and at the same time to prevent cutting silicone debris etc. from clogging the cutting area. This is done while supplying cooling water, but in this case there is a problem that chips such as silicon chips thrown out together with the cooling water move to the top surface of the semiconductor wafer and adhere to it, contaminating the wafer surface, making it difficult to put it into practical use.
本発明は上述する問題および困難を解決するた
めになされたもので、その目的は半導体ウエハの
如き板状物表面を切削して切溝を形成するダイシ
ングにおいて被加工物の割れや欠けを生じさせる
ことなく確実に切溝を形成し、また切削屑が被加
工物表面に残存しないよう流し去り、被加工物表
面を汚さないようなダイシング装置を提供するこ
とにある。 The present invention has been made to solve the above-mentioned problems and difficulties, and its purpose is to prevent cracking or chipping of the workpiece during dicing, which involves cutting the surface of a plate-shaped object such as a semiconductor wafer to form a groove. To provide a dicing device which can reliably form kerfs without causing any damage, wash away cutting waste so that it does not remain on the surface of a workpiece, and prevent the surface of the workpiece from being contaminated.
上記目的を達成するための本願発明の要旨は、
板状物表面を切削して切溝を形成しうるように構
成された回転ブレードと、この回転ブレードによ
り切削される板状物の切削局部に冷却水を供給す
る冷却水供給機構と、前記冷却水供給機構とは別
に設けられ前記板状物表面に洗浄水を供給する洗
浄水供給機構とを具備してなることを特徴とする
ダイシング装置にある。 The gist of the present invention for achieving the above object is as follows:
a rotating blade configured to cut the surface of a plate-like object to form a cutting groove; a cooling water supply mechanism that supplies cooling water to a cut local part of the plate-like object cut by the rotating blade; The dicing apparatus is characterized in that it includes a cleaning water supply mechanism that is provided separately from the water supply mechanism and supplies cleaning water to the surface of the plate-shaped object.
以下図面を参照して本発明の一実施例を具体的
に説明する。 An embodiment of the present invention will be specifically described below with reference to the drawings.
第１図は本発明のダイシング装置により半導体
装置ウエハを切削し切溝を形成している形態を示
すものである。 FIG. 1 shows how a semiconductor device wafer is cut and grooves are formed using the dicing apparatus of the present invention.
まず、本発明に使用するダイシング装置を説明
すれば、半導体ウエハ１を載置するテーブル２が
あつて、その上方部にはウエハを切削するための
ブレード３が回転できるように取付けられ、この
ブレード３の側部には切削局部に冷却水４を供給
するための冷却水供給管５が取付けられ、さらに
テーブル２の一方端の上方部には切削によりこの
テーブル上面に載置された半導体ウエハ１の表面
にはじき出される切削屑を洗い流し去るような洗
浄水の流れをウエハ表面につくる機構である洗浄
供給管７が取付けられている。なお、この洗浄水
供給管７には多数の放出口８が等間隔に配設され
て、各放出口８から洗浄水６が放出し半導体ウエ
ハ表面全体に切削屑を洗い流し去るための洗浄水
の流れを形成できるようになつている。 First, to explain the dicing apparatus used in the present invention, there is a table 2 on which a semiconductor wafer 1 is placed, and a blade 3 for cutting the wafer is rotatably attached to the upper part of the table 2. A cooling water supply pipe 5 for supplying cooling water 4 to the cutting local area is attached to the side of the table 3, and a semiconductor wafer 1 placed on the top surface of the table by cutting is attached to the upper part of one end of the table 2. A cleaning supply pipe 7 is attached, which is a mechanism for creating a flow of cleaning water on the wafer surface to wash away cutting debris thrown out from the wafer surface. The cleaning water supply pipe 7 has a large number of discharge ports 8 arranged at equal intervals, and the cleaning water 6 is discharged from each discharge port 8 to wash away cutting debris over the entire surface of the semiconductor wafer. It is now possible to form a flow.
加工しようとする半導体ウエハ１を例えば合成
樹脂等からなるウエハ台９に接着固定し、これを
ダイシング装置のテーブル２上に載置する。この
ウエハ載置は各素子間を区切る各横の線がブレー
ド３に沿つて平行になるように載置する。そして
ブレード３を半導体ウエハの各素子間を区切る各
横線に合せ、ブレード３を矢印Ａ方向に毎分
18000〜30000回転させ、同時に矢印Ｂの方向に移
動させながらウエハ表面を切削し切溝を形成す
る。このとき同時にブレード３の側部に取付けた
冷却水供給管５から切削局部に冷却水４を毎分約
１放出して切削局部の加熱を防止し、さらにテ
ーブルの一端に取付けた洗浄水供給管７の各放出
口８から一斉に洗浄水６を毎分約４の割合で放
出して切溝を形成してゆく方向に流しウエハ全表
面に洗浄水の流れをつくり切削屑を洗い流しなが
ら切溝の形成を行なう。その後、ウエハの各素子
間を区切る各縦の線に沿つて前述と同様に切削し
て切溝を形成し、各ペレツトごとに分離し、ウエ
ハ台９から剥離して半導体ペレツトを得る。 A semiconductor wafer 1 to be processed is adhesively fixed to a wafer stand 9 made of, for example, synthetic resin, and placed on a table 2 of a dicing machine. The wafer is placed so that the horizontal lines separating each element are parallel to each other along the blade 3. Then, align the blade 3 with each horizontal line that separates each element of the semiconductor wafer, and rotate the blade 3 in the direction of arrow A every minute.
While rotating the wafer 18,000 to 30,000 times and simultaneously moving in the direction of arrow B, the surface of the wafer is cut to form a kerf. At the same time, cooling water 4 is discharged from the cooling water supply pipe 5 attached to the side of the blade 3 to the cutting area at a rate of about 1 per minute to prevent heating of the cutting area, and a cleaning water supply pipe is attached to one end of the table. Cleaning water 6 is discharged all at once from each discharge port 8 of 7 at a rate of about 4 per minute in the direction of forming the kerf, creating a flow of cleaning water over the entire surface of the wafer, washing away cutting debris and filling the kerf. formation. Thereafter, the wafer is cut along each vertical line separating each element in the same manner as described above to form a groove, and each pellet is separated and peeled from the wafer stand 9 to obtain a semiconductor pellet.
第２図は本発明の他の実施例である。 FIG. 2 shows another embodiment of the invention.
テーブル２の上面を平面との角度θ45゜（必要に
応じてこの角度θを自由に変える）に傾斜させ、
洗浄水をテーブル面に密着させた半導体ウエハ１
の上方から下方にかけて流すことによりウエハ全
表面によりスムーズな洗浄水の流れをつくり半導
体ウエハ表面にはじき出される切削屑を洗い流し
ながらブレード３よる切溝の形成を行なう。 The top surface of the table 2 is tilted at an angle θ45° with the plane (this angle θ can be changed freely as necessary),
Semiconductor wafer 1 with cleaning water in close contact with the table surface
By flowing from the top to the bottom of the wafer, a smoother flow of cleaning water is created over the entire surface of the wafer, and the cutting grooves are formed by the blade 3 while washing away the cutting waste thrown out on the surface of the semiconductor wafer.
この場合に傾斜した面に洗浄水を流すことか
ら、前記実施例よりも一層洗浄効果がある。 In this case, since the cleaning water is flowed on the inclined surface, the cleaning effect is more effective than in the previous embodiment.
以上、実施例で述べたように本願発明のダイシ
ング装置によれば回転ブレードにより板状物を切
削するため、クラツキング等による割れや欠けが
発生しにくく、かつ洗浄水供給機構により板状物
表面に洗浄水の流れをつくり切削屑を板状物表面
から流し去ることができるのでウエハ表面を切削
屑のない清浄な状態に保つことができる。また実
施例で述べたように洗浄水を板状物に対し水平ま
たは斜上方から流し、板状物の表面にスムーズな
洗浄水の流れを形成することにより、より効果的
に切削屑を板状物表面から流し去ることができ
る。また洗浄水供給機構により板状物表面に洗浄
水の流れをつくることができるため、この洗浄水
の流れをつくりながら切削を行うことにより、切
削により生じる切削屑が板状物表面に定義する間
もなく洗い流し去ることができる効果がある。ま
た洗浄水供給機構による洗浄水の流れの方向を切
削屑がブレードの回転方向に従つて板状物表面に
主としてはじき出される方向と一致せしめること
により、洗浄効果をより一層高めることができ
る。また切溝を形成してゆく方向に従つて洗浄水
を流すことにより溝内の切削屑を切削してゆくそ
ばから効果的に洗い流し去ることができる。また
洗浄水供給機構により板状物表面に洗浄水を供給
することにより切削屑を板状物表面から流し去る
ことができる他に冷却水供給機構により板状物の
切削局部に冷却水を供給することにより切削局部
の加熱を防止することができ、切溝をスムーズ
に、精度よく形成することができる。また冷却水
供給機構により切削局部に冷却水を流すとともに
洗浄水供給機構により板状物表面に洗浄水の流れ
をつくりながら切削を行うことにより、切削屑を
板状物表面に定着する間もなく洗い流し去り、し
かも切溝をスムーズに精度よく形成することがで
きる。 As described above in the embodiments, the dicing apparatus of the present invention cuts the plate-like object with a rotating blade, so cracks and chips due to cracking etc. are less likely to occur, and the cleaning water supply mechanism cuts the plate-like object on the surface. Since it is possible to create a flow of cleaning water and wash away the cutting debris from the surface of the plate-like object, the wafer surface can be kept in a clean state free of cutting debris. In addition, as described in the example, by flowing cleaning water horizontally or diagonally above the plate-shaped object and forming a smooth flow of cleaning water on the surface of the plate-shaped object, cutting waste can be more effectively removed from the plate-shaped object. It can be washed away from the surface of objects. In addition, since the cleaning water supply mechanism can create a flow of cleaning water on the surface of the plate-shaped object, by cutting while creating this flow of cleaning water, the cutting debris generated by cutting will not be defined on the surface of the plate-shaped object. It has the effect of being able to be washed away. In addition, the cleaning effect can be further enhanced by making the direction of the flow of the cleaning water by the cleaning water supply mechanism coincide with the direction in which cutting debris is mainly thrown out onto the surface of the plate-like object in accordance with the rotational direction of the blade. Furthermore, by flowing the cleaning water in the direction in which the grooves are formed, cutting debris in the grooves can be effectively washed away from the area where the grooves are being cut. In addition, the cleaning water supply mechanism can supply cleaning water to the surface of the plate-like object to wash away cutting debris from the surface of the plate-like object, and the cooling water supply mechanism supplies cooling water to the cut local parts of the plate-like object. This makes it possible to prevent heating of the cut local area, and to form kerfs smoothly and accurately. In addition, the cooling water supply mechanism flows cooling water to the cutting area, and the cleaning water supply mechanism creates a flow of cleaning water on the surface of the plate while cutting, so that the cutting debris is washed away before it settles on the surface of the plate. Moreover, the kerf can be formed smoothly and accurately.
本発明よれば、洗浄水供給管が冷却水供給管と
は別に設けられるので冷却水が供給される切削局
部外にも洗浄水を供給することができる。このた
め、回転ブレードによつて板状物を切削する際
に、回転ブレード周辺に飛び散る切削屑を効果的
に洗い流すことができる。 According to the present invention, since the cleaning water supply pipe is provided separately from the cooling water supply pipe, the cleaning water can be supplied outside the cutting area to which the cooling water is supplied. Therefore, when cutting a plate-like object with the rotating blade, cutting debris scattered around the rotating blade can be effectively washed away.
実施例では本発明を半導体ウエハのダイシング
に適用した場合について説明したが、本発明は半
導体ウエハの他にガラス板、セラミツク板等の硬
脆性の板状物のダイシングにも適用できるもので
ある。 In the embodiments, a case has been described in which the present invention is applied to dicing semiconductor wafers, but the present invention can also be applied to dicing hard and brittle plate-like materials such as glass plates and ceramic plates in addition to semiconductor wafers.
第１図は本発明の一実施例のダイシング装置に
より半導体ウエハを切断している状態を示す斜視
図、第２図は本発明の他の実施例の側面図であ
る。
１……半導体ウエハ、２……テーブル、３……
ブレード、４……冷却水、５……冷却水供給管、
６……洗浄水、７……洗浄水供給管、８……放出
口、９……ウエハ台。
FIG. 1 is a perspective view showing a semiconductor wafer being cut by a dicing apparatus according to an embodiment of the present invention, and FIG. 2 is a side view of another embodiment of the present invention. 1... Semiconductor wafer, 2... Table, 3...
Blade, 4...Cooling water, 5...Cooling water supply pipe,
6...Cleaning water, 7...Cleaning water supply pipe, 8...Discharge port, 9...Wafer stand.
Claims (1)
に構成された回転ブレードと、この回転ブレード
により切削される板状物の切削局部に冷却水を供
給する冷却水供給機構と、前記冷却水供給機構と
は別に設けられ前記板状物表面に洗浄水を供給す
る洗浄水供給機構とを具備してなることを特徴と
するダイシング装置。1. A rotating blade configured to cut the surface of a plate-like object to form a cutting groove; a cooling water supply mechanism that supplies cooling water to a local part of the plate-like object cut by the rotating blade; A dicing apparatus comprising: a cleaning water supply mechanism that is provided separately from the cooling water supply mechanism and supplies cleaning water to the surface of the plate-shaped object.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60264741A JPS61148004A (en) | 1985-11-27 | 1985-11-27 | Dicing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60264741A JPS61148004A (en) | 1985-11-27 | 1985-11-27 | Dicing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61148004A JPS61148004A (en) | 1986-07-05 |
| JPH0158047B2 true JPH0158047B2 (en) | 1989-12-08 |
Family
ID=17407530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60264741A Granted JPS61148004A (en) | 1985-11-27 | 1985-11-27 | Dicing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61148004A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015208796A (en) * | 2014-04-24 | 2015-11-24 | 株式会社ディスコ | Cutting tool device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2526738Y2 (en) * | 1990-06-26 | 1997-02-19 | 株式会社東京精密 | Cleaning equipment for dicing machine |
| JP4777072B2 (en) * | 2006-01-11 | 2011-09-21 | 株式会社東京精密 | Dicing machine |
| WO2013051375A1 (en) * | 2011-10-05 | 2013-04-11 | シャープ株式会社 | Dicing device, and method for manufacturing semiconductor device |
| JP6012239B2 (en) * | 2012-04-23 | 2016-10-25 | 株式会社ディスコ | Wafer processing method |
Citations (6)
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|---|---|---|---|---|
| GB1063904A (en) * | 1963-07-13 | 1967-04-05 | Waldrich Werkzeugmasch | Method and apparatus for cooling machine tools |
| JPS4858771A (en) * | 1971-11-22 | 1973-08-17 | ||
| JPS4894985A (en) * | 1972-03-17 | 1973-12-06 | ||
| JPS493291A (en) * | 1972-04-22 | 1974-01-12 | ||
| JPS4916072A (en) * | 1972-04-10 | 1974-02-13 | ||
| JPS6112373A (en) * | 1984-06-29 | 1986-01-20 | Tokyo Electric Co Ltd | Printer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48104255U (en) * | 1972-03-11 | 1973-12-05 |
-
1985
- 1985-11-27 JP JP60264741A patent/JPS61148004A/en active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1063904A (en) * | 1963-07-13 | 1967-04-05 | Waldrich Werkzeugmasch | Method and apparatus for cooling machine tools |
| JPS4858771A (en) * | 1971-11-22 | 1973-08-17 | ||
| JPS4894985A (en) * | 1972-03-17 | 1973-12-06 | ||
| JPS4916072A (en) * | 1972-04-10 | 1974-02-13 | ||
| JPS493291A (en) * | 1972-04-22 | 1974-01-12 | ||
| JPS6112373A (en) * | 1984-06-29 | 1986-01-20 | Tokyo Electric Co Ltd | Printer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015208796A (en) * | 2014-04-24 | 2015-11-24 | 株式会社ディスコ | Cutting tool device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61148004A (en) | 1986-07-05 |
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