JPH01321647A - Electron beam measuring instrument - Google Patents
Electron beam measuring instrumentInfo
- Publication number
- JPH01321647A JPH01321647A JP63155504A JP15550488A JPH01321647A JP H01321647 A JPH01321647 A JP H01321647A JP 63155504 A JP63155504 A JP 63155504A JP 15550488 A JP15550488 A JP 15550488A JP H01321647 A JPH01321647 A JP H01321647A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- semiconductor device
- induced
- detection circuit
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 238000001514 detection method Methods 0.000 claims abstract description 24
- 238000005259 measurement Methods 0.000 claims description 5
- 230000007257 malfunction Effects 0.000 abstract description 6
- 230000001133 acceleration Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Landscapes
- Measurement Of Current Or Voltage (AREA)
- Measurement Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の電位を測定する電子ビーム測定装
置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electron beam measuring device for measuring the potential of a semiconductor device.
従来、この種の電子ビーム測定装置は、電子ビームの加
速電圧や量（照射電流）などの測定条件を操作者の経験
等にもとづいて設定するようになっていた。Conventionally, in this type of electron beam measuring device, measurement conditions such as the accelerating voltage and amount (irradiation current) of the electron beam have been set based on the operator's experience.
上述した従来の電子ビーム測定装置は、電子ビーム加速
電圧を操作者の経験等にもとづいて設定しているので、
加速電圧の設定値が不適切なため半導体装置に損傷を与
えたり、誤動作をひきおこすという欠点がある。又、測
定中にラッチアップ現象により半導体装置に損傷を与え
たり、誤動作をひきおこすという欠点もあった。In the conventional electron beam measuring device described above, the electron beam acceleration voltage is set based on the operator's experience, etc.
There is a drawback that the setting value of the accelerating voltage is inappropriate, which may damage the semiconductor device or cause malfunction. Furthermore, there is also the drawback that the semiconductor device may be damaged or malfunction due to latch-up phenomenon during measurement.
本発明の電子ビーム測定装置は、所定電圧に加速した電
子ビームで半導体装置の表面を走査し、放出される二次
電子を検出して前記半導体装置の電位分布を測定する電
子ビーム測定装置において、前記電子ビームにより誘起
されて前記半導体装置に流れる誘起電流を検出し所定値
と比較して制御信号を発生する誘起電流検出回路と、前
記制御信号を受けて前記電子ビームの量を制御する手段
とを有している。The electron beam measurement device of the present invention scans the surface of a semiconductor device with an electron beam accelerated to a predetermined voltage, detects emitted secondary electrons, and measures the potential distribution of the semiconductor device. an induced current detection circuit that detects an induced current that is induced by the electron beam and flows through the semiconductor device, compares it with a predetermined value, and generates a control signal; and means that receives the control signal and controls the amount of the electron beam. have.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の電子ビーム測定装置のブロ
ック図である。FIG. 1 is a block diagram of an electron beam measurement apparatus according to an embodiment of the present invention.
鏡筒１の内部は真空になっている。電子銃のフィラメン
ト２から放出された電子ビームは、パルス電子ビーム発
生器５でパルス化され、さらに電子レンズ３，４で集束
走査され半導体装置１０に到達する。The interior of the lens barrel 1 is a vacuum. The electron beam emitted from the filament 2 of the electron gun is pulsed by a pulsed electron beam generator 5, further focused and scanned by electron lenses 3 and 4, and reaches the semiconductor device 10.
半導体装置１０は半導体装置駆動系２２で駆動されてい
る。The semiconductor device 10 is driven by a semiconductor device drive system 22.
半導体装置１０から放出された二次電子は二次電子検出
器６で検出され二次電子検出信号を出力する。信号処理
系２３は半導体装置駆動系２２と同期しており、またパ
ルス電子ビーム発生器５゜電子レンズ３．４を制御する
とともに、二次電子検出信号の信号処理を行なう。電子
ビーム発生回路２４は電子ビームの加速電圧（つまりフ
ィラメント２の電位）を制御し、前記加速電圧の電子ビ
ームを半導体装置１０に照射する。Secondary electrons emitted from the semiconductor device 10 are detected by the secondary electron detector 6, and a secondary electron detection signal is output. The signal processing system 23 is synchronized with the semiconductor device drive system 22, and also controls the pulsed electron beam generator 5° electron lens 3.4 and processes the secondary electron detection signal. The electron beam generation circuit 24 controls the acceleration voltage of the electron beam (that is, the potential of the filament 2), and irradiates the semiconductor device 10 with the electron beam at the acceleration voltage.
電子ビームにより半導体装置１０に誘起された誘起電流
を誘起電流検出回路２１が検出する。この誘起電流は半
導体装置の電源電圧端子又は特定の信号端子の電流とし
て検出できる。つまり、例えば電源電流が電子ビームを
照射することによって変化する。An induced current detection circuit 21 detects an induced current induced in the semiconductor device 10 by the electron beam. This induced current can be detected as a current at a power supply voltage terminal or a specific signal terminal of the semiconductor device. That is, for example, the power supply current changes by irradiating the electron beam.
誘起電流が所定の値と異なる時には電流検出回路２１が
制御信号を発生し、この制御信号により電子ビーム発生
回路２４を制御し、電子銃の加速電圧を変更させる。When the induced current differs from a predetermined value, the current detection circuit 21 generates a control signal, and this control signal controls the electron beam generation circuit 24 to change the acceleration voltage of the electron gun.
変更された加速電圧の電子ビームにより誘起された電流
を電流検出回路２１が検出し、電流が所定の値と一致す
るまで、電子ビーム発生回路２４に制御信号を送り、電
子銃２の加速電圧を変更せしめる。The current detection circuit 21 detects the current induced by the electron beam with the changed acceleration voltage, and sends a control signal to the electron beam generation circuit 24 to increase the acceleration voltage of the electron gun 2 until the current matches a predetermined value. Make it change.
パルス電子ビーム発生器の直流電位が固定されているな
らば、フィラメント２の電位により主として電子ビーム
の量が変化する。加速電圧の変化は相対値が小さく、電
子ビームのエネルギーの変化はあまりないと考えてよい
。If the DC potential of the pulsed electron beam generator is fixed, the amount of the electron beam changes mainly depending on the potential of the filament 2. The relative value of the change in accelerating voltage is small, and it can be considered that the energy of the electron beam does not change much.
電子ビーム発生回路を制御する代りに、パルス電子ビー
ム発生器の直流電位を可変させて電子ビーム量を制御し
てもよい。Instead of controlling the electron beam generation circuit, the amount of electron beam may be controlled by varying the DC potential of the pulsed electron beam generator.
第２図は本発明の第２の実施例のブロック図である。FIG. 2 is a block diagram of a second embodiment of the invention.
この実施例では第１の実施例にラッチアップ電流検出回
路３１が付加されている。In this embodiment, a latch-up current detection circuit 31 is added to the first embodiment.
誘起電流検出回路２１は電子ビームにより半導体装置１
０に誘起された誘起電流（例えば電源電流〉を検出し、
誘起電流が所定の値と異なる時には、制御信号を発生し
、電子ビーム発生回路２４を制御する。The induced current detection circuit 21 detects the semiconductor device 1 using an electron beam.
Detects the induced current (e.g. power supply current) induced at zero,
When the induced current differs from a predetermined value, a control signal is generated to control the electron beam generation circuit 24.
ラッチアップ電流検出回路、３１は半導体装置１０のラ
ッチアップ電流を検出し、ラッチアップ電流が所定の値
を超えた時にはラッチアップ検出信号３２を発生する。A latch-up current detection circuit 31 detects the latch-up current of the semiconductor device 10, and generates a latch-up detection signal 32 when the latch-up current exceeds a predetermined value.
半導体装置駆動系２２はラッチアップ検出信号３２を受
けると、半導体装置１０を駆動する信号の印加を所定の
時間停止した後、信号の印加を開始する。この実施例で
はラッチアップ電流検出回路を有しているためラッチア
ップによる半導体装置の誤動作を防止できるという利点
がある。When the semiconductor device drive system 22 receives the latch-up detection signal 32, it stops applying the signal for driving the semiconductor device 10 for a predetermined period of time, and then starts applying the signal. This embodiment has the advantage of being able to prevent malfunctions of the semiconductor device due to latch-up since it includes a latch-up current detection circuit.
ラッチアップ電流は、誘起電流と同様に半導体装置の電
源電流又は特定の端子電流として測定できる。従って、
ラッチアップ電流検出回路３１を特別に設けず、誘起電
流検出回路の出力である制御信号を、二次電子検出器６
の出力の有無に応じて電子ビーム発生回路２４又は半導
体装置駆動系２２のどちらかに加えるようにしてもよい
。つまり、電子ビームを照射していないときラッチアッ
プの起きない条件に設定し、ついで電子ビームを照射し
て誘起電流を一定値に保つようにすればよい。二次電子
検出器の出力又はその反転出力と制御信号の論理積をと
り電子ビーム発生回路２４又は半導体装置駆動系２２に
加えればよいのである。Like the induced current, the latch-up current can be measured as a power supply current or a specific terminal current of the semiconductor device. Therefore,
The latch-up current detection circuit 31 is not specially provided, and the control signal that is the output of the induced current detection circuit is sent to the secondary electron detector 6.
It may be added to either the electron beam generation circuit 24 or the semiconductor device drive system 22 depending on the presence or absence of the output. In other words, the conditions may be set such that latch-up does not occur when the electron beam is not irradiated, and then the induced current may be maintained at a constant value by irradiating the electron beam. All that is required is to AND the output of the secondary electron detector or its inverted output and the control signal and apply it to the electron beam generation circuit 24 or the semiconductor device drive system 22.
なお、以上の説明で用いた半導体装置という語は、パッ
ケージを開封してペレットの表面を露出させたもの又は
ペレットそのものを意味している。Note that the term "semiconductor device" used in the above description means a device whose package is opened to expose the surface of a pellet, or a pellet itself.
以上説明したように本発明は、電子ビームにより半導体
装置に誘起される電流の検出回路を有し、前記誘起電流
が所定の値の時に、前記検出回路が制御信号を発生し、
電子ビームの量を制御することにより、電子ビーム照射
による半導体装置の誤動作を防止できる効果がある。As described above, the present invention includes a detection circuit for a current induced in a semiconductor device by an electron beam, and when the induced current is a predetermined value, the detection circuit generates a control signal,
By controlling the amount of electron beam, it is possible to prevent malfunctions of semiconductor devices due to electron beam irradiation.
第１図は本発明の第１の実施例のブロック図、第２図は
本発明の第２の実施例のブロック図である。
１・・・鏡筒、２・・・電子銃（フィラメント）、３゜
４・・・電子レンズ、５・・・パルス電子ビーム発生器
、６・・・二次電子検出器、１０・・・半導体装置、２
１・・・誘起電流検出回路、２２・・・半導体装置駆動
系、２３・・・信号処理系、２４・・・電子ビーム発生
回路、３１・・・ラッチアップ電流検出回路。
）Ｎ１
」／図FIG. 1 is a block diagram of a first embodiment of the invention, and FIG. 2 is a block diagram of a second embodiment of the invention. DESCRIPTION OF SYMBOLS 1... Lens barrel, 2... Electron gun (filament), 3° 4... Electron lens, 5... Pulse electron beam generator, 6... Secondary electron detector, 10... semiconductor device, 2
DESCRIPTION OF SYMBOLS 1... Induced current detection circuit, 22... Semiconductor device drive system, 23... Signal processing system, 24... Electron beam generation circuit, 31... Latch-up current detection circuit. )N1''/Figure
Claims (1)
走査し、放出される二次電子を検出して前記半導体装置
の電位分布を測定する電子ビーム測定装置において、前
記電子ビームにより誘起されて前記半導体装置に流れる
誘起電流を検出し所定値と比較して制御信号を発生する
誘起電流検出回路と、前記制御信号を受けて前記電子ビ
ームの量を制御する手段とを有していることを特徴とす
る電子ビーム測定装置。In an electron beam measuring device that scans the surface of a semiconductor device with an electron beam accelerated to a predetermined voltage and detects emitted secondary electrons to measure the potential distribution of the semiconductor device, The device is characterized by comprising an induced current detection circuit that detects an induced current flowing through the device, compares it with a predetermined value, and generates a control signal, and means that receives the control signal and controls the amount of the electron beam. Electron beam measurement device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63155504A JPH01321647A (en) | 1988-06-22 | 1988-06-22 | Electron beam measuring instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63155504A JPH01321647A (en) | 1988-06-22 | 1988-06-22 | Electron beam measuring instrument |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01321647A true JPH01321647A (en) | 1989-12-27 |
Family
ID=15607491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63155504A Pending JPH01321647A (en) | 1988-06-22 | 1988-06-22 | Electron beam measuring instrument |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01321647A (en) |
-
1988
- 1988-06-22 JP JP63155504A patent/JPH01321647A/en active Pending
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