JPH01310578A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPH01310578A JPH01310578A JP63141281A JP14128188A JPH01310578A JP H01310578 A JPH01310578 A JP H01310578A JP 63141281 A JP63141281 A JP 63141281A JP 14128188 A JP14128188 A JP 14128188A JP H01310578 A JPH01310578 A JP H01310578A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal electrode
- semiconductor film
- alloy
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 15
- 239000010936 titanium Substances 0.000 claims abstract description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000011701 zinc Substances 0.000 claims abstract description 9
- 239000011651 chromium Substances 0.000 claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 8
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 7
- 239000004332 silver Substances 0.000 claims abstract description 7
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000011733 molybdenum Substances 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】 （０産業上の利用分野 本発明は光起電力装置に関する。[Detailed description of the invention] (0 industrial application fields The present invention relates to photovoltaic devices.
（ロ）従来の技術
光起電力装置としては、ガラス、耐熱プラスチック等の
透明基板上に、透明電極、アモルファスシリコン（ａ−
Ｓｉ）等の光活性層を含む半導体膜、金属電極をこの順
序で積層した構造のものが知られている。(b) Conventional technology As a photovoltaic device, a transparent electrode, amorphous silicon (a-
A structure in which a semiconductor film including a photoactive layer such as Si) and a metal electrode are laminated in this order is known.
このような構造の光起電力装置における金属電極として
は、ａ−Ｓｉと電気的にオーム性接触すると共にａ−Ｓ
ｉと良好な接着性を必要とすることから、一般に、Ａｌ
２（アルミ）やＡｇの上にＴｉ（チタン）を重ねたもの
が用いられる。In a photovoltaic device having such a structure, the metal electrode is in electrical ohmic contact with the a-Si and in contact with the a-S.
Generally, Al
2 (aluminum) or Ag with Ti (titanium) layered on top.
ところが、斯るＡｇは光の反射率が長波長領域であまり
高くない（６００ｍｍで約８５％、８００ｍで約８０％
）ため、半導体膜で吸収されずに通過してきた光を金属
電極にて反射して再度半導体膜へ入射させることによっ
て、全ての光を充分に有効に利用することに対しては、
不利であった。However, the light reflectance of such Ag is not very high in the long wavelength region (approximately 85% at 600 mm and approximately 80% at 800 m).
) Therefore, in order to fully utilize all the light by reflecting the light that has passed through the semiconductor film without being absorbed by the metal electrode and making it enter the semiconductor film again,
It was a disadvantage.
そこで、長波長の光に対しても９０％以上の反射率を有
するＡｇ（銀）を金属電極として用いることが考えられ
たが、このＡｇはａ−Ｓｉとの接若作がＡＱと較べて１
／１ｏ以下であるため、ａ−８ｉからのはがれが生じ易
い。Therefore, it was considered to use Ag (silver), which has a reflectance of 90% or more even for long-wavelength light, as a metal electrode, but this Ag has a poor contact with a-Si compared to AQ. 1
/1o or less, peeling from a-8i is likely to occur.
こうした問題点を解決すべく、特開昭６０−３０１８３
号公報では、ＡｇとＡｇとの合金を金属電極として用い
ることが提案されている。In order to solve these problems, Japanese Patent Publication No. 60-30183
In the publication, it is proposed to use an alloy of Ag and Ag as a metal electrode.
（ハ）考案が解決しようとする課題
しかし乍ら、Ａｇはａ−Ｓｉ中へ拡散しやすく、斯る拡
散が生じると、ａ−Ｓｉの特性が低下し、引いては光起
電力装置の出力特性を低下させる。(c) Problems to be solved by the invention However, Ag tends to diffuse into a-Si, and when such diffusion occurs, the characteristics of a-Si deteriorate, which in turn reduces the output of the photovoltaic device. Reduce properties.
（ニ）課題を解決するための手段
本発明は、光活性層を含む半導体膜と光入射側から見て
上記半導体膜の背面側に形成された金属電極とを備えた
光起電力装置におキいて、上記金属電極の少なくとも上
記半導体膜と接する層がＴｉ（チタン）、Ｎｉにノケル
）、Ｃｒ（クロム）、Ｚｎ（亜鉛）、Ｓｉ（シリコン）
またはＭＯ（モリブデン）の少なくとも１つとＡｇ（銀
）との合金から成ることを特徴とする。(d) Means for Solving the Problems The present invention provides a photovoltaic device comprising a semiconductor film including a photoactive layer and a metal electrode formed on the back side of the semiconductor film when viewed from the light incident side. At least the layer of the metal electrode in contact with the semiconductor film is made of Ti (titanium), Ni (nickel), Cr (chromium), Zn (zinc), Si (silicon).
Alternatively, it is characterized by being made of an alloy of at least one of MO (molybdenum) and Ag (silver).
また、上記合金層はＡｇの含有率が４０％未満の場合に
膜厚が１００人未満であることを特徴とする。Further, the alloy layer is characterized in that the film thickness is less than 100% when the Ag content is less than 40%.
更に、上記合金層はＡｇの含有率が４０％以上の場合に
膜厚が１００Å以上であることを特徴とする。Further, the alloy layer is characterized in that the film thickness is 100 Å or more when the Ag content is 40% or more.
（ネ）作 用
本発明によれば、Ａｇに含有されたＴｉ、Ｎｉ、Ｃｒ、
Ｚｒ３ Ｓ ｉまたはＭＯの少なくとも１つが斯る合金
とａ−Ｓｉとの接着性を高める。(N) Function According to the present invention, Ti, Ni, Cr contained in Ag,
At least one of Zr3Si or MO enhances the adhesion between such alloys and a-Si.
（へ）実施例 嘱１図は本発明の一実施例を示す断面図である。(f) Example Figure 1 is a sectional view showing one embodiment of the present invention.
ガラス、耐熱プラスチック等の透光性基板（１）上に、
Ｉ ｎ ２０３ 、Ｓ ｎＱ ２ 等の透明電極（２
）、膜面に平行なｐ −ｉ −ｎ構造を有するａ−Ｓｉ
等の半導体膜（３）及び金属電極（４）が、この順序で
積層形成され、金属電極（４）の少なくとも半導体膜（
３）と接する層は、Ｔｉ、Ｎｉ＝ Ｃｒ、Ｚｎ、Ｓｉま
たはＭｏの少なくとも１つとＡｇとの合金から成る。On a transparent substrate (1) such as glass or heat-resistant plastic,
Transparent electrodes (2
), a-Si with a p-i-n structure parallel to the film surface
The semiconductor film (3) and the metal electrode (4) are laminated in this order, and at least the semiconductor film (4) of the metal electrode (4)
The layer in contact with 3) is made of an alloy of Ag and at least one of Ti, Ni=Cr, Zn, Si, or Mo.
斯る金属型ｆ！＋４）は、Ａｇの中にＴｉ、Ｎｉ、Ｃｒ
、Ｚｎ、ＳｉまたはＭｏの少なくとも１つを所定量含ん
だ合金ベレットを用いた真空蒸着により得られる。Such a metal type f! +4) contains Ti, Ni, and Cr in Ag.
, Zn, Si, or Mo by vacuum deposition using an alloy pellet containing a predetermined amount of at least one of them.
第２図は金属電極（４）としてＴｉＡｇ合金を用いた場
合のＡｇの含有率と５５０ｍｍの光反射率との関係を種
々の膜厚のものについて示す特性図である。FIG. 2 is a characteristic diagram showing the relationship between the Ag content and the light reflectance at 550 mm for various film thicknesses when a TiAg alloy is used as the metal electrode (4).
同図から見て、Ａｇの含有率が４０％未満の場合、膜厚
が大きくなると反射率が大きく低下してしま°うため、
膜厚は１００人未満であることが望まれる。この場合、
膜厚が薄くても、半導体膜（３）との接着性は十分なも
のが得られる。As seen from the figure, when the Ag content is less than 40%, the reflectance decreases significantly as the film thickness increases.
It is desirable that the film thickness be less than 100 people. in this case,
Even if the film thickness is small, sufficient adhesion to the semiconductor film (3) can be obtained.
一方、Ａｇの含有率が４０％以上の場合、膜厚に関係な
く高い反射率を有するが、膜厚が小さいと半導体Ｊｌｉ
（３＋との十分な接着性が得られないことから、膜厚は
１００Å以上が好適である。On the other hand, when the Ag content is 40% or more, it has a high reflectance regardless of the film thickness, but when the film thickness is small, the semiconductor Jli
(Since sufficient adhesion with 3+ cannot be obtained, the film thickness is preferably 100 Å or more.
下表に、本発明の実施例の光起電力装置の出力特性を、
従来例のものと比較（従来例のものを１として比較）し
て示す。本発明の実施例は、金属電極（４）として半導
体膜（３）側からＡｇの含有率が３０％である膜厚５０
人のＴｉＡｇ合金層、Ａｇ層及びＴｉ層を順に積層した
構造を採用したものであり、従来例は金属電極（４）と
して半導体層（３）側からＡｇ層及びＴｉ層を順に積層
した構造を用いたものである。The table below shows the output characteristics of the photovoltaic device according to the embodiment of the present invention.
A comparison with the conventional example (comparison with the conventional example as 1) is shown. In the embodiment of the present invention, the metal electrode (4) has a film thickness of 50% from the semiconductor film (3) side with an Ag content of 30%.
A structure in which a TiAg alloy layer, an Ag layer, and a Ti layer are sequentially laminated is adopted, whereas the conventional example has a structure in which an Ag layer and a Ti layer are laminated in order from the semiconductor layer (3) side as the metal electrode (4). This is what was used.
このように、本発明の実施例は、従来例に比較して出力
特性が向上する。As described above, the embodiment of the present invention has improved output characteristics compared to the conventional example.
また、本発明の実施例及び実施例に対して、９０°Ｃの
雰囲気中で１０００時間の高温放置試験を行なった結果
、変換効率が従来例では初期値の３２？≦にまで劣化し
たのに対し、本発明の実施例では初期値から全く変化し
なかった。Further, as a result of conducting a high temperature storage test for 1000 hours in an atmosphere of 90°C for the embodiments and examples of the present invention, the conversion efficiency of the conventional example was the initial value of 32? In contrast, in the examples of the present invention, there was no change at all from the initial value.
更に、本発明の実施例及び従来例の金属電極の半導体膜
との接着性は全く変わらない。Furthermore, the adhesion between the metal electrode and the semiconductor film of the embodiment of the present invention and the conventional example is completely unchanged.
（ト）発明の効果
本発明によれば、半導体膜との接着性を従来に比べて低
下させることなく、出力特性を向上するとともに劣化を
防止することができる。(g) Effects of the Invention According to the present invention, output characteristics can be improved and deterioration can be prevented without lowering the adhesion with the semiconductor film compared to the prior art.
第１１”ｌは本発明の一実施例を示す断面図、第２図は
Ａｇの含有率と反射率との関係を示す特性図である。
（１）・・基板、（２）・・透明電極、（３）・・・半
導体膜、（４）・・金属電極。No. 11"l is a cross-sectional view showing one embodiment of the present invention, and FIG. 2 is a characteristic diagram showing the relationship between Ag content and reflectance. (1)...Substrate, (2)...Transparent Electrode, (3)...semiconductor film, (4)...metal electrode.
Claims (3)
記半導体膜の背面側に形成された金属電極とを備えた光
起電力装置において、上記金属電極の少なくとも上記半
導体膜と接する層がＴｉ（チタン）、Ｎｉ（ニッケル）
、Ｃｒ（クロム）、Ｚｎ（亜鉛）、Ｓｉ（シリコン）ま
たはＭｏ（モリブデン）の少なくとも１つとＡｇ（銀）
との合金から成ることを特徴とする光起電力装置。(1) In a photovoltaic device comprising a semiconductor film including a photoactive layer and a metal electrode formed on the back side of the semiconductor film when viewed from the light incidence side, at least the metal electrode is in contact with the semiconductor film. Layer is Ti (titanium), Ni (nickel)
, Cr (chromium), Zn (zinc), Si (silicon), or Mo (molybdenum) and Ag (silver).
A photovoltaic device comprising an alloy of.
膜厚が１００Å未満であることを特徴とする第１項記載
の光起電力装置。(2) The photovoltaic device according to item 1, wherein the alloy layer has a thickness of less than 100 Å when the Ag content is less than 40%.
膜厚が１００Å以上であることを特徴とする第１項記載
の光起電力装置。(3) The photovoltaic device according to item 1, wherein the alloy layer has a thickness of 100 Å or more when the Ag content is 40% or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63141281A JPH01310578A (en) | 1988-06-08 | 1988-06-08 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63141281A JPH01310578A (en) | 1988-06-08 | 1988-06-08 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01310578A true JPH01310578A (en) | 1989-12-14 |
Family
ID=15288244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63141281A Pending JPH01310578A (en) | 1988-06-08 | 1988-06-08 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01310578A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7291374B2 (en) | 1998-06-22 | 2007-11-06 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314659B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US7314657B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314660B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7316837B2 (en) | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7374805B2 (en) | 2000-07-21 | 2008-05-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7645500B2 (en) | 2003-04-18 | 2010-01-12 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| JP2016143855A (en) * | 2015-02-05 | 2016-08-08 | シャープ株式会社 | Photoelectric conversion element and method for manufacturing photoelectric conversion element |
| WO2017043522A1 (en) * | 2015-09-09 | 2017-03-16 | シャープ株式会社 | Solar cell and method for manufacturing solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5896780A (en) * | 1981-12-04 | 1983-06-08 | Matsushita Electric Ind Co Ltd | Photoelectric conversion element |
| JPS58157176A (en) * | 1982-03-15 | 1983-09-19 | Hitachi Ltd | Solar battery element |
| JPS59208789A (en) * | 1983-05-12 | 1984-11-27 | Agency Of Ind Science & Technol | Solar cell |
| JPS60253281A (en) * | 1984-05-29 | 1985-12-13 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
-
1988
- 1988-06-08 JP JP63141281A patent/JPH01310578A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5896780A (en) * | 1981-12-04 | 1983-06-08 | Matsushita Electric Ind Co Ltd | Photoelectric conversion element |
| JPS58157176A (en) * | 1982-03-15 | 1983-09-19 | Hitachi Ltd | Solar battery element |
| JPS59208789A (en) * | 1983-05-12 | 1984-11-27 | Agency Of Ind Science & Technol | Solar cell |
| JPS60253281A (en) * | 1984-05-29 | 1985-12-13 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7291374B2 (en) | 1998-06-22 | 2007-11-06 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7384677B2 (en) | 1998-06-22 | 2008-06-10 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US7314659B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US7314657B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314660B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7316837B2 (en) | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7374805B2 (en) | 2000-07-21 | 2008-05-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7645500B2 (en) | 2003-04-18 | 2010-01-12 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| JP2016143855A (en) * | 2015-02-05 | 2016-08-08 | シャープ株式会社 | Photoelectric conversion element and method for manufacturing photoelectric conversion element |
| WO2016125627A1 (en) * | 2015-02-05 | 2016-08-11 | シャープ株式会社 | Photoelectric conversion element and method for manufacturing photoelectric conversion element |
| WO2017043522A1 (en) * | 2015-09-09 | 2017-03-16 | シャープ株式会社 | Solar cell and method for manufacturing solar cell |
| CN107924957A (en) * | 2015-09-09 | 2018-04-17 | 夏普株式会社 | The manufacture method of solar cell and solar cell |
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