JPH01309965A - Magnetron sputtering device - Google Patents
Magnetron sputtering deviceInfo
- Publication number
- JPH01309965A JPH01309965A JP14108388A JP14108388A JPH01309965A JP H01309965 A JPH01309965 A JP H01309965A JP 14108388 A JP14108388 A JP 14108388A JP 14108388 A JP14108388 A JP 14108388A JP H01309965 A JPH01309965 A JP H01309965A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- target
- magnet
- pair
- magnet pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000004544 sputter deposition Methods 0.000 abstract description 12
- 239000010409 thin film Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、マグネトロンスパッタ装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a magnetron sputtering apparatus.
従来の技術
近年、マグネトロンスパッタ装置は、光磁気ディスク、
光ディスクの記録膜等の成膜に多く使用されている。Conventional technology In recent years, magnetron sputtering equipment has been used for magneto-optical disks,
It is often used to form recording films for optical discs.
以下図面を参照しながら、従来のマグネトロンスパッタ
装置の一例について説明する。第２図において、１はタ
ーゲット、２はターゲット１を固定するバッキングプレ
ート、３はターゲット１を冷却するための冷却水の管、
４は磁石対、６はヨーク、６はターゲット１と、バッキ
ングプレート２と、冷却水の管３をもち、磁石対４、ヨ
ーク５をターゲット１の中心軸より偏芯させ回転させる
ことが可能なカソード本体、７はターゲット１に対向し
で配置され、スパッタにより膜が堆積される基板、８は
、基板アを保持し、自転させる基板回転機溝、９はカソ
ード本体６へ電圧を印加し、ターゲット１表面でプラズ
マを発生させるための電源、１０は真空チャンバー、１
１は真空チャンバー１０内を真空排気するための真空排
気ポンプ、１２１空チヤンバー１０内にスパッタリング
ガスを供給するためのガス供給系である。An example of a conventional magnetron sputtering apparatus will be described below with reference to the drawings. In FIG. 2, 1 is a target, 2 is a backing plate for fixing target 1, 3 is a cooling water pipe for cooling target 1,
4 has a magnet pair, 6 a yoke, 6 a target 1, a backing plate 2, and a cooling water pipe 3, and the magnet pair 4 and yoke 5 can be rotated eccentrically from the central axis of the target 1. A cathode body, 7 is a substrate placed opposite the target 1 and on which a film is deposited by sputtering, 8 is a groove for a substrate rotating machine that holds and rotates the substrate, 9 is for applying voltage to the cathode body 6; A power source for generating plasma on the surface of the target 1, 10 a vacuum chamber, 1
1 is a vacuum pump for evacuating the inside of the vacuum chamber 10; 121 is a gas supply system for supplying sputtering gas into the empty chamber 10;
以上のように構成されたスパッタリング装置について以
下その動作について説明する。The operation of the sputtering apparatus configured as described above will be explained below.
まず、真空チャンバー１０内をロータリーポンプ、油拡
散ポンプ、クライオポンプ等の真空排気ポンプ１１によ
り１Ｏ−６Ｔｏｒｒ 台の真空度まで真空排気する。First, the inside of the vacuum chamber 10 is evacuated to a degree of vacuum on the order of 10-6 Torr using a vacuum pump 11 such as a rotary pump, an oil diffusion pump, or a cryopump.
その後、ガス供給系１２により、真空チャンバー１０内
にＡｒ 等スパッタリングガスを導入し、５ Ｘ １０
Ｔｏｒｒ程度の真空度に設定し、カソード本体６へ
、電源９により、ＤＣｔたはＲＦの電圧を印加する。そ
れにより真空チャンバー１０内にプラズマが発生する。After that, a sputtering gas such as Ar is introduced into the vacuum chamber 10 by the gas supply system 12, and a sputtering gas of 5×10
The degree of vacuum is set to approximately Torr, and a DCt or RF voltage is applied to the cathode body 6 from the power source 9. As a result, plasma is generated within the vacuum chamber 10.
そのためＡｒ イオンが発生する。また、磁石対４の磁
界により、プラズマ密度の高い部分が発生し、Ａｒ
イオンのターゲット１への衝突量が増加する。そして主
にその部分から粒子が飛散するが、磁石対４が、グーゲ
ット１の中心軸に対して偏芯し、回転しているため、タ
ーゲット１の表面全体の粒子が均一に飛散し、基板回転
機構８により自転し、対向して配置された基板子の表面
に堆積し膜が形成される。Therefore, Ar ions are generated. Furthermore, due to the magnetic field of the magnet pair 4, a region with high plasma density is generated, and Ar
The amount of ions colliding with the target 1 increases. Particles are mainly scattered from that part, but since the magnet pair 4 is eccentric with respect to the central axis of the goo get 1 and rotates, the particles on the entire surface of the target 1 are evenly scattered, and the substrate rotates. The film is rotated by the mechanism 8 and deposited on the surface of the substrate elements arranged facing each other to form a film.
発明が解決しようとする課題
しかしながら上記のような構成では、ターゲットの利用
効率を向上するために、磁石対がターゲット中心軸に対
して偏芯し、回転しているため、磁石対によって、ター
ゲット表面より粒子の飛散が集中する箇所と基板との位
置関係が常に変化する。ここで、粒子の飛散が集中する
箇所は、リング状の磁石対の場合、磁石対の中心軸を中
心としたリングとなる。以下、このリングをプラズマリ
ングとする。マグネトロンスパッタ装置による、膜厚均
一性は、ターゲット表面から基板表面までの距離と、プ
ラズマリング径と、プラズマリングの中心軸と、基板中
心軸との偏芯量により決定する。よって、上記のような
構成では、プラズマリングが、常に移動しているため、
プラズマリングと基板との位置関係が変化する。そのた
め、磁石対固定の場合、例えば、φ２ｏｏａＩＩの基板
内で、膜厚均一性が±３チ以内であったのが、磁石対を
回転することによυ±８％になるという問題点を有して
いた。また、膜厚均一性が低下するために、光磁気ディ
スク、光ディスク等の膜の特性均一性が低下するという
問題点も有していた。Problems to be Solved by the Invention However, in the above configuration, in order to improve the utilization efficiency of the target, the magnet pair is rotated eccentrically with respect to the target center axis. The positional relationship between the substrate and the location where particles are more concentrated is constantly changing. Here, in the case of a ring-shaped magnet pair, the location where particle scattering is concentrated is a ring centered on the central axis of the magnet pair. Hereinafter, this ring will be referred to as a plasma ring. The film thickness uniformity in a magnetron sputtering device is determined by the distance from the target surface to the substrate surface, the diameter of the plasma ring, and the amount of eccentricity between the central axis of the plasma ring and the central axis of the substrate. Therefore, in the above configuration, since the plasma ring is constantly moving,
The positional relationship between the plasma ring and the substrate changes. Therefore, in the case of a fixed magnet pair, for example, within a φ2ooaII substrate, the film thickness uniformity, which was within ±3 inches, becomes υ±8% by rotating the magnet pair. Was. Furthermore, since the uniformity of the film thickness is reduced, there is also a problem that the uniformity of characteristics of the film of magneto-optical disks, optical disks, etc. is reduced.
本発明は上記問題点に鑑み、磁石対が回転可能なマグネ
トロンスパッタ装置において、磁石対回転による膜厚均
一性の低下を防ぎ、膜の特性の均一１生を向上するとい
うものである。In view of the above-mentioned problems, the present invention aims to prevent a decrease in film thickness uniformity due to the rotation of the magnet pair and to improve the uniformity of film properties in a magnetron sputtering apparatus in which the magnet pair is rotatable.
課題を解決するための手段
上記問題点を解決するために、本発明のマグネトロンス
パッタ装置は、基板を保持し、磁石対のターゲット中心
軸からの偏芯量と同じ回転半径で、磁石対の偏芯回転速
度と同じ回転速度で、常時、磁石対と基板との位置関係
が同じになるように基板を公転し、さらに自転させるこ
とが可能な基板回転機構を備えたものである。Means for Solving the Problems In order to solve the above problems, the magnetron sputtering apparatus of the present invention holds a substrate and rotates the magnet pair with the same rotational radius as the eccentricity of the magnet pair from the target central axis. It is equipped with a substrate rotation mechanism that can revolve the substrate at the same rotation speed as the core rotation speed so that the positional relationship between the magnet pair and the substrate is always the same, and further rotate the substrate.
作 用
本発明は上記した構成によって、スパッタの際に、磁石
対と基板との位置関係、すなわち、プラズマリングの中
心軸と、基板中心軸との偏芯量を常時一定に保つことに
よセ、磁石対固定で、スパッタした場合の膜厚均一性と
同等の膜厚均一性を得ることとなり、さらに、光磁気デ
ィスク、光ディスク等の膜の基板内の特性均一性を向上
することとなる。Effect of the Invention With the above-described configuration, the present invention maintains the positional relationship between the magnet pair and the substrate, that is, the amount of eccentricity between the center axis of the plasma ring and the center axis of the substrate, constant during sputtering. By fixing the magnet pair, it is possible to obtain a film thickness uniformity equivalent to that obtained by sputtering, and further improve the characteristic uniformity within the substrate of a film such as a magneto-optical disk or an optical disk.
実施例
以下本発明の実施例のマグネトロンスパッタ装置につい
て、図面を参照しながら説明する。EXAMPLE Hereinafter, a magnetron sputtering apparatus according to an example of the present invention will be described with reference to the drawings.
第１図は本発明の実施例におけるマグネトロンスパッタ
装置の概略断面図を示す。第１図において、１０１はタ
ーゲット、１０２はターゲット１ｏ１を固定するバッキ
ングプレート、１０３はターゲット１０１を冷却するた
めの冷却水の管、１０４は磁石対、１０５はヨーク、１
０６はターゲット１０１と、バッキングプレート１０２
と、冷却水の管１０３をもち、磁石対１０４、ヨーク１
０５をターゲット１０１の中心軸より偏芯させ回転させ
ることが可能なカソード本体、１０７はターゲット１ｏ
１に対向して配置され、スパッタにより膜が堆積される
基板、１０Ｂは、基板１０７を保持し、磁石対１０４の
ターゲット１０１中心軸からの偏芯量と同じ回転半径で
、磁石対１０４の偏芯回転速度と同じ回転速度で、常時
、磁石対１０４と基板１０７との位置関係が同じになる
ように基板１０了を公転し、さらに自転させることが可
能な基板回転機構、１０９はカソード本体１０６へ電圧
を印加し、ターゲット１０１表面でプラズマを発生させ
るだめの電源、１１０は真空チャンバー、１１１は真空
チャンバー１１０内を真空排気するための真空排気ポン
プ、１１２は真空チャンバー１１０内にスパッタリング
ガスを供給するためのガス供給系である。FIG. 1 shows a schematic cross-sectional view of a magnetron sputtering apparatus in an embodiment of the present invention. In FIG. 1, 101 is a target, 102 is a backing plate for fixing the target 1o1, 103 is a cooling water pipe for cooling the target 101, 104 is a pair of magnets, 105 is a yoke, 1
06 is a target 101 and a backing plate 102
, a cooling water pipe 103, a magnet pair 104, and a yoke 1.
05 is a cathode body that can be eccentrically rotated from the central axis of the target 101, and 107 is a target 1o.
The substrate 10B, which is disposed opposite to the target 101 and on which a film is deposited by sputtering, holds the substrate 107 and rotates the magnet pair 104 with the same rotation radius as the eccentricity of the magnet pair 104 from the center axis of the target 101. A substrate rotation mechanism 109 is capable of revolving the substrate 10 at the same rotational speed as the core rotational speed so that the positional relationship between the magnet pair 104 and the substrate 107 is always the same, and further rotating the substrate 10; 109 is a cathode body 106; 110 is a vacuum chamber; 111 is a vacuum pump for evacuating the inside of the vacuum chamber 110; 112 is a supply of sputtering gas into the vacuum chamber 110; This is a gas supply system for
以上のように構成されたマグネトロンスパッタ装置にお
いて、以下第１図を用いてその動作を説明する。The operation of the magnetron sputtering apparatus configured as described above will be described below with reference to FIG.
まず、真空チャンバー１１０内を、ロータリーポンプ、
油拡散ポンプ、クライオポンプ等の真空排気ポンプ１０
８により、１０””６Ｔｏｒｒ 台の真空度まで真空
排気する。その後、ガス供給系１１２により、真空チャ
ンバー １１０内にＡｒ等スパッタリングガスを導入し
、５Ｘ１０ Ｔｏｒｒ程度の真空度に設定する。ここ
で磁石対１０４及びターゲット１０１は、冷却水の管１
０３からの冷却水によって冷却されている。次にカソー
ド本体１０６へ、電源１０９により、ＤＣまたはＲＦの
電圧を印加する。それによシ真空チャンバー１１０内に
プラズマが発生する。そのためＡｒ イオンが発生する
。また磁石対１０４の磁界により、プラズマ密度の高い
部分が発生し、Ａｒイオンのターゲット１０１への衝突
量が増加する。そして主に、その部分から粒子が飛散す
るが、ターゲット１０１の利用効率及び寿命向上のため
に、磁石対１０４が、ターゲラ）１０１の中心軸に対し
て偏芯し、回転しているため、ターゲット１０１０表面
全体の粒子が均一に飛散する。このとき、基板回転機構
１０８により、磁石対１０４のターゲット１０１中心軸
からの偏心量と同じ回転半径で、磁石対１０４の偏芯回
転速度と同じ回転速度で、常時、磁石対１０４と基板１
０７との位置関係、すなわち、プラズマリングの中心軸
と、基板１０７の中心軸との偏芯量を一定に保ち、基板
１０７を公転し、さらに自転させる。よって、ターゲッ
ト１０１に対向して配置された、基板１０７の表面に粒
子が堆積し、膜が形成される。First, inside the vacuum chamber 110, a rotary pump,
Vacuum pump 10 such as oil diffusion pump, cryopump, etc.
8 to evacuate to a vacuum level of 10''6 Torr. Thereafter, a sputtering gas such as Ar is introduced into the vacuum chamber 110 by the gas supply system 112, and the degree of vacuum is set to about 5×10 Torr. Here, the magnet pair 104 and the target 101 are connected to the cooling water pipe 1
It is cooled by cooling water from 03. Next, a DC or RF voltage is applied to the cathode body 106 by the power supply 109. As a result, plasma is generated within the vacuum chamber 110. Therefore, Ar ions are generated. Furthermore, the magnetic field of the magnet pair 104 generates a portion with high plasma density, and the amount of Ar ions colliding with the target 101 increases. Particles are mainly scattered from that part, but in order to improve the utilization efficiency and lifespan of the target 101, the magnet pair 104 is rotated eccentrically with respect to the central axis of the target 101. 1010 Particles are scattered uniformly over the entire surface. At this time, the substrate rotation mechanism 108 always rotates the magnet pair 104 and the substrate 1 at the same rotation radius as the eccentricity of the magnet pair 104 from the center axis of the target 101 and at the same rotation speed as the eccentric rotation speed of the magnet pair 104.
07, that is, the amount of eccentricity between the central axis of the plasma ring and the central axis of the substrate 107, is kept constant, and the substrate 107 is revolved and further rotated. Therefore, particles are deposited on the surface of the substrate 107, which is placed facing the target 101, and a film is formed.
以上のように本実施例によれば、スパッタリングの際プ
ラズマリングの中心軸と、基板１０７の中心軸との偏芯
量が常に一定に保たれるため、磁石対１０４が固定の場
合の、膜厚均一性と常に同等となる。例えば、φ２００
簡の基板内での膜厚 ４均一性が、磁石対１０４が固定
の場合、±３俤以内であったものが、磁石対１ｏ４を偏
芯回転させても、±３チ以内となった。また、光ディス
クの記録膜等の、反射率、特性の均一性も向上すること
ができた。As described above, according to this embodiment, since the amount of eccentricity between the central axis of the plasma ring and the central axis of the substrate 107 is always kept constant during sputtering, the amount of eccentricity between the central axis of the plasma ring and the central axis of the substrate 107 is always kept constant. It is always equivalent to thickness uniformity. For example, φ200
The film thickness uniformity within the simple substrate was within ±3 degrees when the magnet pair 104 was fixed, but it became within ±3 degrees even when the magnet pair 104 was eccentrically rotated. Furthermore, it was also possible to improve the reflectance and uniformity of characteristics of the recording film of the optical disc.
なお、本実施例によれば、第１図において、ターゲラ）
１０１の中心軸と、基板１０７の公転中心軸が、同軸上
になっているが、同軸上になくてもよい。According to this embodiment, in FIG.
Although the central axis of the substrate 101 and the revolution center axis of the substrate 107 are coaxial, they do not have to be coaxial.
発明の効果
以上のように本発明は、基板を保持し、磁石対のターゲ
ット中心軸からの偏心量と同じ回転半径で、磁石対の偏
芯回転速度と同じ回転速度で、常時、磁石対と基板との
位置関係が同じＫなるように基板を公転し、さらに自転
させることが可能な基板回転機構を設けることにより、
磁石対が偏芯回転可能なマグネトロンスパッタ装置にお
いて、磁石対回転による膜厚均一性の低下を防ぎ、膜の
特性の均一性を向上することができた。Effects of the Invention As described above, the present invention holds a substrate and constantly rotates the magnet pair at the same rotation radius as the eccentricity of the magnet pair from the target center axis and at the same rotational speed as the eccentric rotation speed of the magnet pair. By providing a substrate rotation mechanism that can revolve the substrate so that the positional relationship with the substrate is the same K, and further rotate the substrate,
In a magnetron sputtering device in which the magnet pair can rotate eccentrically, it was possible to prevent a decrease in film thickness uniformity due to the rotation of the magnet pair and improve the uniformity of film characteristics.
第１図は本発明の実施例におけるマグネトロンスパッタ
装置の概略断面図、第２図は従来のマグネトロンスパッ
タ装置の概略断面図である。
１０１・・・・・・ターゲット、１０４・・・・・・磁
石対、１０６・・・・・・カソード本体、１０７・・・
・・・基板、１０８・・・・・・基板回転機構、１０９
・・・・・・電源。FIG. 1 is a schematic sectional view of a magnetron sputtering apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic sectional view of a conventional magnetron sputtering apparatus. 101... Target, 104... Magnet pair, 106... Cathode body, 107...
...Substrate, 108...Substrate rotation mechanism, 109
······power supply.
Claims (1)
バー内を減圧雰囲気にするための真空ポンプと、真空チ
ャンバー内にガスを供給するためのガス供給系と、少な
くとも１個のマグネトロン型カソードと、少なくとも１
個の基板と、カソードに電圧を印加する電源とをもつマ
グネトロンスパッタ装置において、ターゲットと、それ
を固定するバッキングプレートと、磁石対とヨークをも
ち、かつ、上記磁石対が、ターゲットの中心軸より偏芯
１回転することが可能なカソード本体と、基板を保持し
磁石対のターゲット中心軸からの偏芯量と同じ回転半径
で、磁石対の偏芯回転速度と同じ回転速度で、常時、磁
石対と基板との位置関係が同じになるように基板を公転
し、さらに自転させることが可能な基板回転機構を備え
たことを特徴とするマグネトロンスパッタ装置。A vacuum chamber capable of maintaining a vacuum state, a vacuum pump for creating a reduced pressure atmosphere in the vacuum chamber, a gas supply system for supplying gas into the vacuum chamber, at least one magnetron type cathode, and at least 1
A magnetron sputtering device has a target, a backing plate that fixes the target, a pair of magnets, and a yoke, and the pair of magnets is located from the central axis of the target. The cathode body, which can rotate once eccentrically, holds the substrate, and the magnet is constantly rotated at the same rotational radius as the eccentricity of the magnet pair from the target center axis, and at the same rotational speed as the eccentric rotation speed of the magnet pair. A magnetron sputtering apparatus characterized by comprising a substrate rotation mechanism capable of revolving the substrate so that the positional relationship between the pair and the substrate is the same and further rotating the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14108388A JPH01309965A (en) | 1988-06-08 | 1988-06-08 | Magnetron sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14108388A JPH01309965A (en) | 1988-06-08 | 1988-06-08 | Magnetron sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01309965A true JPH01309965A (en) | 1989-12-14 |
Family
ID=15283813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14108388A Pending JPH01309965A (en) | 1988-06-08 | 1988-06-08 | Magnetron sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01309965A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0211761A (en) * | 1988-06-28 | 1990-01-16 | Tokuda Seisakusho Ltd | Sputtering device |
| US5345207A (en) * | 1991-01-25 | 1994-09-06 | Leybold Aktiengesellschaft | Magnet configuration with permanent magnets |
| US5409590A (en) * | 1989-04-17 | 1995-04-25 | Materials Research Corporation | Target cooling and support for magnetron sputter coating apparatus |
| EP0716161A1 (en) * | 1994-12-05 | 1996-06-12 | Satis Vacuum Industries AG | Apparatus for coating of optical substrate |
| EP1882051A2 (en) * | 2005-05-20 | 2008-01-30 | Applied Materials, Inc. | Module for a coating system and associated technology |
| US7804040B2 (en) | 2005-02-03 | 2010-09-28 | Applied Materials, Inc. | Physical vapor deposition plasma reactor with arcing suppression |
| WO2011123399A3 (en) * | 2010-03-31 | 2012-01-26 | Applied Materials, Inc. | Apparatus for physical vapor deposition having centrally fed rf energy |
| WO2011139439A3 (en) * | 2010-04-28 | 2012-01-26 | Applied Materials, Inc. | Physical vapor deposition chamber with rotating magnet assembly and centrally fed rf power |
| US8182662B2 (en) | 2009-03-27 | 2012-05-22 | Sputtering Components, Inc. | Rotary cathode for magnetron sputtering apparatus |
| US8778144B2 (en) * | 2004-09-28 | 2014-07-15 | Oerlikon Advanced Technologies Ag | Method for manufacturing magnetron coated substrates and magnetron sputter source |
-
1988
- 1988-06-08 JP JP14108388A patent/JPH01309965A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0211761A (en) * | 1988-06-28 | 1990-01-16 | Tokuda Seisakusho Ltd | Sputtering device |
| US5409590A (en) * | 1989-04-17 | 1995-04-25 | Materials Research Corporation | Target cooling and support for magnetron sputter coating apparatus |
| US5345207A (en) * | 1991-01-25 | 1994-09-06 | Leybold Aktiengesellschaft | Magnet configuration with permanent magnets |
| EP0716161A1 (en) * | 1994-12-05 | 1996-06-12 | Satis Vacuum Industries AG | Apparatus for coating of optical substrate |
| US8778144B2 (en) * | 2004-09-28 | 2014-07-15 | Oerlikon Advanced Technologies Ag | Method for manufacturing magnetron coated substrates and magnetron sputter source |
| US8562798B2 (en) * | 2005-02-03 | 2013-10-22 | Applied Materials, Inc. | Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron |
| US7804040B2 (en) | 2005-02-03 | 2010-09-28 | Applied Materials, Inc. | Physical vapor deposition plasma reactor with arcing suppression |
| EP1882051A2 (en) * | 2005-05-20 | 2008-01-30 | Applied Materials, Inc. | Module for a coating system and associated technology |
| EP1882051A4 (en) * | 2005-05-20 | 2012-01-04 | Applied Materials Inc | Module for a coating system and associated technology |
| US8182662B2 (en) | 2009-03-27 | 2012-05-22 | Sputtering Components, Inc. | Rotary cathode for magnetron sputtering apparatus |
| CN102859029A (en) * | 2010-03-31 | 2013-01-02 | 应用材料公司 | Apparatus for physical vapor deposition having centrally fed RF energy |
| WO2011123399A3 (en) * | 2010-03-31 | 2012-01-26 | Applied Materials, Inc. | Apparatus for physical vapor deposition having centrally fed rf energy |
| US8795488B2 (en) | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Apparatus for physical vapor deposition having centrally fed RF energy |
| US8795487B2 (en) | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power |
| WO2011139439A3 (en) * | 2010-04-28 | 2012-01-26 | Applied Materials, Inc. | Physical vapor deposition chamber with rotating magnet assembly and centrally fed rf power |
| JP2013525609A (en) * | 2010-04-28 | 2013-06-20 | アプライド マテリアルズ インコーポレイテッド | Physical vapor deposition chamber with rotating magnet assembly and RF power supplied to the center |
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